CN108735762A - 画素结构 - Google Patents

画素结构 Download PDF

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CN108735762A
CN108735762A CN201710272129.1A CN201710272129A CN108735762A CN 108735762 A CN108735762 A CN 108735762A CN 201710272129 A CN201710272129 A CN 201710272129A CN 108735762 A CN108735762 A CN 108735762A
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layer
substrate
image element
semiconductor active
element structure
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CN108735762B (zh
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刘轩辰
张崇霖
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Hannstar Display Corp
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Hannstar Display Corp
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Abstract

本发明公开了一种画素结构，包括一第一基板，一薄膜晶体管，一第二绝缘层，一第一透明导电层以及一第二基板。该薄膜晶体管包括一栅极电极，一半导体主动层，一第一绝缘层以及一电极层。该栅极电极形成于该基板上。该半导体主动层形成于该栅极电极上。该第一绝缘层位于该半导体主动层与该栅极电极之间。该电极层包括一源极电极以及一漏极电极，该源极电极与该漏极电极均覆盖于该半导体主动层的部份区域。该第二绝缘层覆盖于该薄膜晶体管。该第一透明导电层，形成于该第二绝缘层上。其中该第一透明导电层沿该半导体主动层的边缘形成有一开口。本发明画素结构可以降低透明导电层与薄膜晶体管之间的感应电流，进而减少薄膜晶体管在关闭时的漏电流。

Description

画素结构
技术领域
本发明系相关于一种画素结构，尤指一种可降低感应电流的画素结构。
背景技术
目前市场对于液晶显示面板(liquid crystal display panel)皆朝向高对比度、高亮度、高色彩饱和度、快速反应以及广视角等方向发展。为了在有限的空间中为了取得最大开口率的设计，画素结构中的氧化铟锡(Indium Tin Oxide,ITO)导电膜，经常采用整片覆盖的方式作为共同电极的连接方式。然而，如此一来画素结构中的薄膜晶体管(Thin-film transistor,TFT)与位于薄膜晶体管上方的氧化铟钖导电膜之间将会产生感应电流(induced current)，该感应电流在薄膜晶体管关闭时仍然会产生，使得薄膜晶体管在关闭时有漏电流，进而造成显示面板亮度不均匀以及cross-talk等问题。
发明内容
本发明所要解决的技术问题是：为了弥补现有技术的不足，提供一种画素结构，包括一第一基板，一薄膜晶体管，一第二绝缘层，一第一透明导电层以及一第二基板。该薄膜晶体管包括一栅极电极，一半导体主动层，一第一绝缘层以及一电极层。该栅极电极形成于该基板上。该半导体主动层形成于该栅极电极上。该第一绝缘层位于该半导体主动层与该栅极电极之间。该电极层包括一源极电极以及一漏极电极，该源极电极与该漏极电极均覆盖该半导体主动层之部份区域。该第二绝缘层覆盖该薄膜晶体管且该第二绝缘层的厚度小于11000埃米该第一透明导电层，形成于该第二绝缘层上。该第二基板设置于该第一基板上方。其中该第一透明导电层沿该半导体主动层的边缘形成有一开口，且该开口的形状对应该半导体主动层的边缘轮廓。
本发明还提供一种画素结构，包括一第一基板，一薄膜晶体管，一第二绝缘层，一第一透明导电层以及一第二基板。该薄膜晶体管包括一栅极电极，一半导体主动层，一第一绝缘层以及一电极层。该栅极电极形成于该基板上。该半导体主动层形成于该栅极电极上。该第一绝缘层位于该半导体主动层与该栅极电极之间。该电极层包括一源极电极以及一漏极电极，该源极电极与该漏极电极均覆盖该半导体主动层之部份区域。该第二绝缘层覆盖该薄膜晶体管。该第一透明导电层，形成于该绝缘层上。该第二基板设置于该第一基板上方。其中该第一透明导电层沿该半导体主动层未被该电极层覆盖的区域的边缘形成有一开口。
附图说明
图1是本发明第一画素结构的第一实施例的剖面图。
图2是图1画素结构的俯视图。
图3是本发明第一画素结构的第二实施例的剖面图。
图4是图3画素结构的俯视图。
图5是本发明第一画素结构的第三实施例的剖面图。
图6是图5画素结构的俯视图。
图7是本发明第一画素结构的第四实施例的剖面图。
图8是图7画素结构的俯视图。
图9是本发明第二画素结构的剖面图。
图10是本发明显示区及周边区的示意图。
图11是本发明第三画素结构的剖面图。
图12是本发明第四画素结构的剖面图。
其中，附图标记说明如下：
10a,10b,10c,10d 第一画素结构
11 第一基板
12 薄膜晶体管
13 栅极电极
14 半导体主动层
15 电极层
151 源极电极
152 漏极电极
16 晶体管绝缘层
17a,17b,17c,17d,97,107,117 透明导电层
18 第二基板
171a,171b,171c,171d 开口
19 画素电极层
20 遮光层
22 液晶层
S1,S2,S3,S4 距离
90 第二画素结构
100 第三画素结构
110 第四画素结构
92,112 覆盖绝缘层
131 栅绝缘层
102 主动绝缘层
108 换线结构
122 第一走线
124 第二走线
126 第三走线
128 连接电极
130 块状结构
111 对向电极层
302 显示区
304 周边区
PS 间隔单元
具体实施方式
请参考图1，图1是本发明第一画素结构的第一实施例的剖面图。如图1所示，本发明第一画素结构10a包括一第一基板11、一薄膜晶体管12、一晶体管绝缘层16、一透明导电层17a以及一第二基板18。薄膜晶体管12形成于第一基板11上。薄膜晶体管12包括一栅极电极13、一半导体主动层14以及一电极层15。栅极电极13形成于基板11上。半导体主动层14形成于栅极电极13上。一栅绝缘层131形成于半导体主动层14与栅极电极13之间。电极层15包括一源极电极151以及一漏极电极152。源极电极151以及漏极电极152均覆盖于半导体主动层14的部份区域。晶体管绝缘层16覆盖于薄膜晶体管12。透明导电层17a形成于晶体管绝缘层16上。第二基板18设置于第一基板11上方。另外，于晶体管绝缘层16与栅绝缘层131之间还形成有一画素电极层19。画素电极层19的材料可与透明导电层17a的材料相同,但本发明并不以此为限。
请参考图2，并一并参考图1。图2是图1画素结构的俯视图。为方便说明，画素结构的部分组件(例如第一基板11、第二基板18、晶体管绝缘层16与栅极电极13)于图2中被省略。图1是图2的A-A线方向的剖面图，其中A-A线仅为剖面方向示意，并非该点实际位置。在本实施例中，透明导电层17a沿半导体主动层14的边缘(图2虚线部分)形成有一开口171a，以使透明导电层17a不形成于半导体主动层14的正上方。换句话说，透明导电层17a的开口171a的形状是对应半导体主动层14的边缘轮廓。在本发明之实施例中，对应系指透明导电层17a的开口171a的形状与半导体主动层14的边缘轮廓可以相同，但本发明并不以此为限，例如透明导电层17a的开口171a位于半导体主动层14之上可以是与半导体主动层14的边缘轮廓接近或近似的任意形状，透明导电层17a的开口171a亦可以局部切齐、重迭或远离半导体主动层14。当透明导电层17a形成于半导体主动层14的正上方时，透明导电层17a与薄膜晶体管12的半导体主动层14之间会产生感应电流。一般来说，使晶体管绝缘层16的厚度增加可降低此感应电流，例如当晶体管绝缘层16的厚度大至30000埃米以上时，透明导电层17a与薄膜晶体管12的半导体主动层14之间所产生的感应电流已经很小，不至于影响薄膜晶体管12的特性，如此设置即可避免造成显示面板亮度不均匀以及cross-talk等问题。然而，晶体管绝缘层16的厚度过厚，透明导电层17a与画素电极层19之间的距离过大，两者之间所形成的电场亦会受影响，不利于后续形成的液晶层受驱动，因此晶体管绝缘层16的厚度小于11000埃米是较佳的选择。本实施例不藉由增加晶体管绝缘层16的厚度，而是在透明导电层17a沿半导体主动层14的边缘形成有一开口171a使透明导电层17a不形成于半导体主动层14的正上方，进而避免透明导电层17a与薄膜晶体管12的半导体主动层14之间产生感应电流。
请再参考图1，透明导电层17a的边缘与半导体主动层14的边缘于第一基板11的正投影相距一距离S1。在本实施例中，距离S1可以是介于0及5.0微米之间。换句话说，透明导电层17a于第一基板11的正投影和半导体主动层14于第一基板11的正投影不重迭。在本实施例中，透明导电层17a的边缘与半导体主动层14的边缘于第一基板11的正投影之间的距离是一固定值，但本发明不以此为限。在本发明其他实施例中，透明导电层17a的边缘与半导体主动层14的边缘于第一基板11的正投影之间的距离亦可以是一变动值，且介于0及5.0微米之间。
依据上述配置，本发明第一画素结构10a中的透明导电层17a形成有一开口171a，使透明导电层17a不形成于半导体主动层14的正上方，如此可以大幅降低透明导电层17a与薄膜晶体管12的半导体主动层14之间的感应电流，进而减少薄膜晶体管12在关闭期间的漏电流。因此使用本发明第一画素结构10a，可以解决显示面板亮度不均匀以及cross-talk等问题。
请同时参考图3以及图4。图3是本发明第一画素结构的第二实施例的剖面图，图4是图3画素结构的俯视图。图3是图4的B-B线方向的剖面图，其中B-B线仅为剖面方向示意，并非该点实际位置。如图所示，本发明第二实施例的第一画素结构10b与本发明第一实施例的画素结构10a类似，差别在于本发明第二实施例的第一画素结构10b的透明导电层17b形成有一面积较小的开口171b，开口171b的面积缩小使得透明导电层17b局部形成于半导体主动层14的上方。换句话说，透明导电层17b于第一基板11的正投影和半导体主动层14于第一基板11的正投影局部重迭，而两正投影的边缘重迭一距离S2，距离S2可以小于1.5微米。在上述距离S2的范围内，即使透明导电层17b局部形成于半导体主动层14的上方，由于重迭处有源极电极151覆盖于半导体主动层14之上，透明导电层17与薄膜晶体管12的半导体主动层14之间的感应电流是在容许范围内，因此亦可以减少薄膜晶体管12在关闭期间的漏电流。本实施例可以缩小透明导电层17b的开口的面积，并控制透明导电层17b与薄膜晶体管12的半导体主动层14之间的感应电流大小在容许范围内。
请参考图5以及图6，图5是本发明第一画素结构第三实施例的剖面图。图6是图5画素结构的俯视图。图5是图6的C-C线方向的剖面图，其中C-C线仅为剖面方向示意，并非该点实际位置。如图5以及图6所示，本发明第三实施例的第一画素结构10c与本发明第一实施例的第一画素结构10a类似，差别在于本发明第三实施例的第一画素结构10c的透明导电层17c沿半导体主动层14未被电极层15覆盖的区域(图6斜线区域)的边缘形成有一开口171c。换句话说，透明导电层17c的开口171c的形状是对应半导体主动层14未被电极层15覆盖的区域的边缘轮廓。在本发明之实施例中，对应系指透明导电层17c的开口171c的形状与半导体主动层14未被电极层15覆盖的区域的边缘轮廓可以相同，但本发明并不以此为限，例如透明导电层17c的开口171c位于半导体主动层14之上可以是与半导体主动层14未被电极层15覆盖的区域的边缘轮廓接近或近似的任意形状，透明导电层17c的开口171c亦可以局部切齐、重迭或远离半导体主动层14。由于透明导电层17c与薄膜晶体管12的半导体主动层14之间的感应电流主要产生在半导体主动层14未被电极层15覆盖的区域，在此区域上方若形成有透明导电层17c，透明导电层17c与薄膜晶体管12的半导体主动层14之间就会产生感应电流。因此在本发明第三实施例中，透明导电层17c沿半导体主动层14未被电极层15覆盖的区域的边缘形成有一开口171c，使透明导电层17c不形成于半导体主动层14未被电极层15覆盖的区域的正上方。如此本实施例除了可以减少透明导电层17c与薄膜晶体管12的半导体主动层14之间的感应电流，亦可以进一步缩小开口的面积。
请再参考图5，透明导电层17c的边缘与半导体主动层14未被电极层15覆盖的区域的边缘于第一基板11的正投影相距一距离S3。在本实施例中，距离S3可以是介于0及3.5微米之间。换句话说，透明导电层17c于第一基板11的正投影和半导体主动层14未被电极层15覆盖的区域于第一基板11的正投影不重迭。在本实施例中，透明导电层17c的边缘与半导体主动层14的边缘于第一基板11的正投影之间的距离是一固定值，但本发明不以此为限。在本发明其他实施例中，透明导电层17c的边缘与半导体主动层14未被电极层15覆盖的区域的边缘于第一基板11的正投影之间的距离亦可以是一变动值，且介于0及3.5微米之间。
请参考图7以及图8，图7是本发明第一画素结构的第四实施例的剖面图，图8是图7画素结构的俯视图。图7是图8的D-D线方向的剖面图，其中D-D线仅为剖面方向示意，并非该点实际位置。如图7以及图8所示，本发明第四实施例的第一画素结构10d与本发明第三实施例的第一画素结构10c类似，差别在于本发明第四实施例的第一画素结构10d的透明导电层17d形成有一面积较小的开口171d，开口171d的面积缩小使得透明导电层17d局部形成于半导体主动层14未被电极层15覆盖的区域的正上方。请参考图8，由于漏极电极152局部覆盖主动层14，为方便说明，图7剖面图的D-D线方向位于漏极电极152的侧边，以显示透明导电层17d的开口171d在主动层14未被漏极电极152覆盖的区域，其中透明导电层17d于第一基板11的正投影和半导体主动层14未被电极层15覆盖的区域于第一基板11的正投影局部重迭，而两正投影的边缘于漏极电极152的侧边重迭一距离S4，距离S4可以是小于1微米。在上述距离S4的范围内，即使透明导电层17d局部形成于半导体主动层14未被电极层15覆盖的区域的上方，透明导电层17d与薄膜晶体管12的半导体主动层14之间的感应电流是在容许范围内，因此亦可以减少薄膜晶体管12在关闭期间的漏电流。本实施例可以进一步缩小透明导电层17d的开口的面积，并控制透明导电层17d与薄膜晶体管12的半导体主动层14之间的感应电流大小在容许范围内。
在上述实施例画素结构中，还可以包括液晶层22形成于第一基板11及该第二基板18之间。再者，在上述实施例中，透明导电层17a、17b、17c、17d可以是一共同电极。另外，在上述实施例中，并未特别限定画素结构的薄膜晶体管以及绝缘层，本发明画素结构的薄膜晶体管可以包括氧化物半导体材料，举例来说，薄膜晶体管的半导体主动层可以使用包括氧化铟镓锌(InGaZnOx)、氧化铟锡锌、氧化铟镓、氧化铟锌、氧化镓、氧化镉、氧化镁、氧化钙、氧化锶、氧化钡、氧化钛、氧化钽、氧化铝、氧化铟、氧化铌、氧化铪、氧化锡、氧化锌、氧化锆、氧化铜、氧化钇、氧化钡钇、氧化钐锡等氧化物半导体材料其一或其任意组合；栅绝缘层131靠近半导体主动层14的位置可以包含硅酸盐(SixOy)；栅绝缘层131可以是双层结构包括下层为氮化硅且上层为氧化硅或可以是单层结构包括氮化硅或氧化硅；晶体管绝缘层16可以是双层结构包括下层为氧化硅且上层为氮化硅或可以是单层结构包括氮化硅或氧化硅，另外晶体管绝缘层16靠近半导体主动层14的位置的氧含量可以高于远离半导体主动层14的位置的氧含量。本发明的各个实施例可以如上述材料所形成，但本发明不以此为限。
如上所述的实施例以及图示，第一画素结构是使用6道光罩制程的画素结构，但本发明不以此为限，第一画素结构的第一实施例到第四实施例的透明导电层的开口配置均可应用于不同的画素结构。为方便说明，仅举出三例并以图9、图11以及图12的剖面图说明本发明应用于不同画素结构的情形。请参考图9，图9是本发明第二画素结构的剖面图。如图所示，第二画素结构90与第一画素结构10a类似，主要差别在于第二画素结构90是采用7道光罩制程的画素结构，在此画素结构中，增加了一覆盖绝缘层92，且画素电极层19形成于晶体管绝缘层16及覆盖绝缘层92之间。透明导电层97形成于覆盖绝缘层92上，并且如同本发明第一画素结构的第一实施例，透明导电层97的边缘与半导体主动层14的边缘于第一基板11的正投影相距一距离S1。第二画素结构90的透明导电层97的开口配置类似于第一画素结构的第一实施例之开口配置，但本发明并不以此为限，第二画素结构90的透明导电层97的开口配置亦可以类似于第一画素结构的第二、第三以及第四实施例中透明导电层的开口配置。请再参考图10及图11，图10是本发显示区及周边区的示意图，图11是本发明第三画素结构及换线结构的剖面图。如图所示，本发明第一基板11包含有显示区302及周边区304，位于显示区302的第三画素结构100的半导体主动层14包含有氧化物半导体材料如IGZO(InGaZnOx氧化铟镓锌)，并且在半导体主动层14上覆盖有一主动绝缘层102，主动绝缘层102形成有二穿孔使源极电极151以及漏极电极152可分别透过穿孔连接半导体主动层14。晶体管绝缘层16覆盖于薄膜晶体管12上，透明导电层107形成于晶体管绝缘层16上，并且如同本发明第一画素结构的第二实施例，透明导电层107于第一基板11的正投影和半导体主动层14于第一基板11的正投影局部重迭，而两正投影的边缘重迭一距离S2。第三画素结构100的透明导电层107的开口配置类似于第一画素结构的第二实施例之开口配置，但本发明并不以此为限，第三画素结构100的透明导电层107的开口配置亦可以类似于第一画素结构的第一、第三以及第四实施例中透明导电层的开口配置。另外要说明的是，换线结构108形成于第一基板11上且位于周边区304内，当周边走线于同一平面上遇到其他结构阻挡时，换线结构108用以导接走线进而绕过该结构。换线结构108包括一第一走线122、一第二走线124、第三走线126、一連接電極128以及一块状结构130。第一走线122形成于第一基板11上且其组成材料可相同于栅极电极13的组成材料。第二走线124形成于栅绝缘层131上且其组成材料可相同于电极层14的组成材料，栅绝缘层131形成有一穿孔使第二走线124透过该穿孔电连接第一走线122。块状结构130形成于栅绝缘层131上且其组成材料可相同于主动绝缘层102的组成材料，第三走线126形成于块状结构130上且其组成材料可相同于电极层14的组成材料。連接電極128形成于晶体管绝缘层16上且其组成材料可相同于透明导电层107的组成材料，晶体管绝缘层16形成有二穿孔使連接電極128分别透过该二穿孔电连接第二走线124以及第三走线126。值得注意的是，块状结构130可用以减少换线时晶体管绝缘层16位于第三走线126上的穿孔的深度，例如在设计周边走线时，先在换线结构108所预定的位置上形成块状结构130，如此可以减少换线时晶体管绝缘层16位于第三走线126上的穿孔的深度，以节省制程时间。请再参考图12，图12是本发明第四画素结构的剖面图。如图所示，第四画素结构110为高开口率类型的TN面板的画素结构，由于TN面板具有垂直电场的特性因此需要在第二基板18与液晶层22之间设置一对向电极层111，透明导电层117形成于晶体管绝缘层16上，覆盖绝缘层112覆盖于透明导电层117上，画素电极层19形成于覆盖绝缘层112上并藉由一穿孔接触电极层15，间隔单元PS形成于覆盖绝缘层112上以提供支持力。此外,对向电极层111的材料可相同于透明导电层117的材料,但本发明并不以此为限。如同本发明第一画素结构的第三实施例，透明导电层117的边缘与半导体主动层14未被电极层15覆盖的区域的边缘于第一基板11的正投影相距一距离S3。第四画素结构110的透明导电层117的开口配置类似于第一画素结构的第三实施例之开口配置，但本发明并不以此为限，第四画素结构110的透明导电层117的开口配置亦可以类似于第一画素结构的第一、第二以及第四实施例中透明导电层的开口配置。
相较于先前技术，本发明画素结构的透明导电层是于半导体主动层上方形成开口，以降低透明导电层与薄膜晶体管的半导体主动层之间的感应电流，进而减少薄膜晶体管在关闭时的漏电流。因此本发明画素结构可以解决显示面板亮度不均匀以及cross-talk等问题。再者，本发明画素结构可以依据开口率、感应电流容许值等设计需求调整透明导电层的开口大小与形状，故本发明画素结构可以符合不同设计需求并且降低感应电流。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (24)

1.一种画素结构，其特征在于，包括：
一第一基板；
一薄膜晶体管，形成于该第一基板上，该薄膜晶体管包括：
一栅极电极，形成于该第一基板上；
一半导体主动层，形成于该栅极电极上；
一第一绝缘层，位于该半导体主动层与该栅极电极之间；以及
一电极层，包括：
一源极电极，覆盖该半导体主动层的部份区域；以及
一漏极电极，覆盖该半导体主动层的部份区域；
一第二绝缘层，覆盖该薄膜晶体管，且该第二绝缘层的厚度小于11000埃米
一第一透明导电层，形成于该第二绝缘层上；以及一第二基板，设置于该第一基板上方；其中该第一透明导电层沿该半导体主动层的边缘形成有一开口，且该开口的形状对应该半导体主动层的边缘轮廓。
2.如权利要求1所述的画素结构，其特征在于，该第一透明导电层于该第一基板的正投影和该半导体主动层于该第一基板的正投影不重迭。
3.如权利要求2所述的画素结构，其特征在于，该第一透明导电层和该半导体主动层于该第一基板的正投影边缘之间的距离为0至5微米。
4.如权利要求1所述的画素结构，其特征在于，该第一透明导电层于该第一基板的正投影和该半导体主动层于该第一基板的正投影局部重迭。
5.如权利要求4所述的画素结构，其特征在于，该第一透明导电层于该第一基板的正投影和该半导体主动层于该第一基板的正投影重迭0至1.5微米。
6.如权利要求1所述的画素结构，其特征在于，还包括一液晶层形成于该第一基板及该第二基板之间，且该第一透明导电层是一共同电极。
7.如权利要求6所述的画素结构，其特征在于，还包括一第二透明导电层形成于该第一绝缘层上。
8.如权利要求6所述的画素结构，其特征在于，还包括一第三绝缘层形成于该第一透明导电层上，且一第二透明导电层形成于该第三绝缘层与该液晶层之间。
9.如权利要求6所述的画素结构，其特征在于，还包括一第二透明导电层形成于该第二基板与该液晶层之间。
10.如权利要求1所述的画素结构，其特征在于，该半导体主动层包括氧化铟镓锌、氧化铟锡锌、氧化铟镓、氧化铟锌、氧化镓、氧化镉、氧化镁、氧化钙、氧化锶、氧化钡、氧化钛、氧化钽、氧化铝、氧化铟、氧化铌、氧化铪、氧化锡、氧化锌、氧化锆、氧化铜、氧化钇、氧化钡钇、氧化钐锡等氧化物半导体材料其一或其任意组合。
11.如权利要求10所述的画素结构，其特征在于，该半导体主动层为氧化铟镓锌，且该第一绝缘层靠近该半导体主动层的位置包含硅酸盐。
12.如权利要求11所述的画素结构，其特征在于，该半导体主动层为氧化铟镓锌，且该第二绝缘层靠近该半导体主动层的位置的氧含量高于该第二绝缘层远离该半导体主动层的位置的氧含量。
13.如权利要求1所述的画素结构，其特征在于，该第一基板包括一显示区及一周边区，其中该周边区包括一换线结构，该换线结构包括一第一走线、一第二走线、一第三走线、一连接电极以及一块状结构，该第一走线形成于该第一基板上，该第二走线形成于该第一绝缘层上，且该第一绝缘层形成有一穿孔使该第二走线可藉由该穿孔电连接该第一走线，该块状结构形成于该第一绝缘层上，该第三走线形成于该块状结构上，该连接电极形成于该第二绝缘层上，且该第二绝缘层形成有二穿孔使该连接电极可分别藉由该二穿孔电连接该第二走线以及该第三走线。
14.一种可降低感应电流的画素结构，其特征在于，包括：
一第一基板；
一薄膜晶体管，形成于该第一基板上，该薄膜晶体管包括：
一栅极电极，形成于该第一基板上；
一半导体主动层，形成于该栅极电极上；
一第一绝缘层，位于该半导体主动层与该栅极电极之间；以及
一电极层，包括：
一源极电极，覆盖该半导体主动层的部份区域；以及
一漏极电极，覆盖该半导体主动层的部份区域；
一第二绝缘层，覆盖该薄膜晶体管；
一第一透明导电层，形成于该绝缘层上；以及
一第二基板，设置于该第一基板上方；
其中该第一透明导电层沿该半导体主动层未被该电极层覆盖的区域的边缘形成有一开口。
15.如权利要求14所述的画素结构，其特征在于，该开口的形状对应该半导体主动层未被该电极层覆盖的区域的边缘轮廓。
16.如权利要求14所述的画素结构，其特征在于，该第一透明导电层于该第一基板的正投影和该半导体主动层未被该电极层覆盖的区域于该第一基板的正投影不重迭。
17.如权利要求16所述的画素结构，其特征在于，该第一透明导电层和该半导体主动层未被该电极层覆盖的区域于该第一基板的正投影边缘之间的距离为0至3.5微米。
18.如权利要求14所述的画素结构，其特征在于，该第一透明导电层于该第一基板的正投影和该半导体主动层未被该电极层覆盖的区域于该第一基板的正投影局部重迭。
19.如权利要求18所述的画素结构，其特征在于，该第一透明导电层于该第一基板的正投影和该半导体主动层未被该电极层覆盖的区域于该第一基板的正投影局部重迭0至1微米。
20.如权利要求14所述的画素结构，其特征在于，还包括一液晶层形成于该第一基板及该第二基板之间，该第一透明导电层是一共同电压电极。
21.如权利要求20所述的画素结构，其特征在于，还包括一第二透明导电层形成于该第一绝缘层上。
22.如权利要求20所述的画素结构，其特征在于，还包括一第三绝缘层形成于该第一透明导电层上，且一第二透明导电层形成于该第三绝缘层与该液晶层之间。
23.如权利要求20所述的画素结构，其特征在于，还包括一第二透明导电层形成于该第二基板与该液晶层之间。
24.如权利要求14所述的画素结构，其特征在于，该第一基板包括一显示区及一周边区，其中该周边区包括一换线结构，该换线结构包括一第一走线、一第二走线、一第三走线、一连接电极以及一块状结构，该第一走线形成于该第一基板上，该第二走线形成于该第一绝缘层上，且该第一绝缘层形成有一穿孔使该第二走线可藉由该穿孔电连接该第一走线，该块状结构形成于该第一绝缘层上，该第三走线形成于该块状结构上，该连接电极形成于该第二绝缘层上，且该第二绝缘层形成有二穿孔使该连接电极可分别藉由该二穿孔电连接该第二走线以及该第三走线。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108987482B (zh) 2017-05-31 2022-05-17 乐金显示有限公司 薄膜晶体管、包括其的栅极驱动器、以及包括该栅极驱动器的显示装置
CN109148592B (zh) * 2017-06-27 2022-03-11 乐金显示有限公司 包括氧化物半导体层的薄膜晶体管，其制造方法和包括其的显示设备
WO2023024058A1 (zh) * 2021-08-27 2023-03-02 京东方科技集团股份有限公司 显示基板和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1397829A (zh) * 2001-07-18 2003-02-19 Lg.菲利浦Lcd株式会社 液晶显示装置的阵列基板及其制造方法
US20050158928A1 (en) * 2001-12-19 2005-07-21 Woo-Young So Method of fabricating thin film transistor with multiple gates using super grain silicon crystallization
US20110233552A1 (en) * 2010-03-23 2011-09-29 Panasonic Liquid Crystal Display Co., Ltd. Tft board for liquid crystal display device and manufacturing method for liquid crystal display device
CN103984170A (zh) * 2013-02-19 2014-08-13 上海天马微电子有限公司 阵列基板及其制造方法、液晶显示器
CN104122716A (zh) * 2013-08-30 2014-10-29 深超光电（深圳）有限公司 液晶显示面板
US20150138481A1 (en) * 2013-11-20 2015-05-21 Mitsubishi Electric Corporation Liquid crystal display panel and method for manufacturing liquid crystal display panel

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103217821B (zh) * 2012-01-19 2016-08-31 瀚宇彩晶股份有限公司 显示装置及其制造方法
KR102023937B1 (ko) * 2012-12-21 2019-09-23 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그의 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1397829A (zh) * 2001-07-18 2003-02-19 Lg.菲利浦Lcd株式会社 液晶显示装置的阵列基板及其制造方法
US20050158928A1 (en) * 2001-12-19 2005-07-21 Woo-Young So Method of fabricating thin film transistor with multiple gates using super grain silicon crystallization
US20110233552A1 (en) * 2010-03-23 2011-09-29 Panasonic Liquid Crystal Display Co., Ltd. Tft board for liquid crystal display device and manufacturing method for liquid crystal display device
CN103984170A (zh) * 2013-02-19 2014-08-13 上海天马微电子有限公司 阵列基板及其制造方法、液晶显示器
CN104122716A (zh) * 2013-08-30 2014-10-29 深超光电（深圳）有限公司 液晶显示面板
US20150138481A1 (en) * 2013-11-20 2015-05-21 Mitsubishi Electric Corporation Liquid crystal display panel and method for manufacturing liquid crystal display panel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110299077A (zh) * 2019-06-28 2019-10-01 京东方科技集团股份有限公司 阵列基板、显示模组和电子设备
CN110299077B (zh) * 2019-06-28 2022-08-12 京东方科技集团股份有限公司 阵列基板、显示模组和电子设备

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