CN108735617A - Wiring tool - Google Patents
Wiring tool Download PDFInfo
- Publication number
- CN108735617A CN108735617A CN201710261140.8A CN201710261140A CN108735617A CN 108735617 A CN108735617 A CN 108735617A CN 201710261140 A CN201710261140 A CN 201710261140A CN 108735617 A CN108735617 A CN 108735617A
- Authority
- CN
- China
- Prior art keywords
- diamond layers
- diamond
- wiring tool
- binder course
- routing head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
- H01L2224/78325—Auxiliary members on the pressing surface
- H01L2224/78328—Material of the auxiliary member
Abstract
The invention discloses a kind of wiring tools, including a work block；One binder course is arranged in the side of the work block；One first these diamond layers are formed in side of the binder course far from the work block with a chemical vapour deposition technique and are in direct contact the binder course, which has a simple layer structure；And a dozen the end of a thread, it is arranged in the side of first these diamond layers far from the binder course and is in direct contact first these diamond layers, and the routing head is formed via a sintering processes with a silicon carbide micro-powder by a diamond micro mist.First these diamond layers not only help the engagement strengthened between the work block and the routing head, while reducing the working face deformation extent of the wiring tool under high temperature, and then promote the service life of the wiring tool.
Description
Technical field
The present invention relates to a kind of wiring tool, espespecially a kind of abrasion performance is promoted, and bond strength improves, and at high temperature not
Yielding wiring tool.
Background technology
Routing engagement (wire bonding) is one of the method that chip and external circuit are attached by current industry.Perhaps
It is multifactor all to influence to engage the good and the bad, for example, wiring tool used in the routing engagement through thermocompression bonding technique,
Surface should have good thermal stability and abrasion performance characteristic, can will not occur to beat in the heating process of line connection process
The bad result such as the Line tool thermal deformation.In order to pursue better quality, many research teams endeavour promoting routing engagement
Technological level, meanwhile, it carries out various research and development also for wiring tool and improves.
For example, the apllied TaiWan, China new patent notification number M539149 of present invention applicant proposes a kind of routing work
Tool, it includes a work block, one, and the binder course and a dozen the end of a thread in the side of the work block is arranged, and in this is novel, should
Routing head is formed through a sintering processes by a diamond micro mist and a silicon carbide micro-powder.
Alternatively, in U.S. patent Nos US6, in 840, the 424B2 wiring tools disclosed, including a tool body, one
Connect the tool body and the supporting member formed by superhard material and one connect the supporting member pressing element, and thoroughly
It crosses chemical vapour deposition technique and forms a diamond film in the pressing element.
Or such as U.S. patent Nos US6,270, the 898B1 engagement tools proposed, including a tool body and
The tool tip of one group of front end for being located at the tool body.The tool tip includes a substrate, one through chemical vapor deposition
The polycrystalline diamond film and one that method is formed are contacted with the polycrystalline diamond film and used in conductive metal layer.Wherein, the polycrystalline diamond
Film may be formed at an installment surface, a joint surface or at least two intersections of the tool tip in the installment surface and the joint surface
On side, and it is situated between 1 × 10 with one-4Ω cm to 1 × 103Resistance between Ω cm, and it includes to have that the polycrystalline diamond film, which is one,
The first conductive polycrystalline diamond film of high boron content and the second conductive polycrystalline diamond film with opposite low boron content is more relatively
Layer structure.
In the prior art, the wiring tool of TaiWan, China new patent notification number M539149 only transmits a solder above
Engage the work block and the routing head, a working face (the namely face of the routing head far from the work block) for routing head and
The material of further auxiliary engagement is not formed in one non-working surface (the namely face of the nearly work block of the routing head rest), in addition to
The abrasion performance degree of the working face is poor outer, still there is deficiency on bond strength；U.S. patent Nos US6,840,424B2's beats
The Line tool only discloses the working face in a dozen the end of a thread and forms a film layer through chemical vapour deposition technique, but its non-working surface not
There is the material that auxiliary engages, therefore the problem of there are still above-mentioned bond strengths；Although U.S. patent Nos US6,270,898B1
Hint is both transparent for chemical vapour deposition technique in a working face of its routing head and a non-working surface and forms the polycrystalline diamond film,
It can so find with interior text from figure, though patent announcement can form the polycrystalline diamond film on the non-working surface, specifically take off
In the content shown, the polycrystalline diamond film on the non-working surface is formed in not with a work block or similar to the base of the work block
Material engages, but is engaged with a metal electrode, the electric current that needs and heat when thereby providing work, therefore, the actually patent
The polycrystalline diamond film of announcement simultaneously can do nothing to help the bond strength between the work block and the routing head, in addition to foregoing problems,
Wiring tool is complex in structure, will raise the manufacturing cost of wiring tool.
When the bond strength between the work block and the routing head is bad, it is easy because of heat under high temperature circulation at work
It deforms and interfacial failure occurs, lead to the service life reduction of the wiring tool, even influence process rate.In view of this, there is an urgent need for one
Kind abrasion performance is promoted, and bond strength improves, and on-deformable wiring tool at high temperature, is engaged and is walked in routing with sharp industry
Rapid carrying out is more smoothly.
Invention content
The purpose of the present invention is that the engagement in the wiring tool for strengthening the prior art between routing head and work block is strong
Degree, while the problem on deformation that the working face for solving the wiring tool often occurs at high operating temperatures.
In order to achieve the above object, the present invention provides a kind of wiring tool, and not only abrasion performance is good for the wiring tool, has
Improved bond strength, and find its working face after tested deflection is low at high operating temperatures, beating for the prior art can be solved
The Line tool is at high temperature because thermal deformation leads to subsequently to cost work and modify that its surface smoothness is made to reach the problem of industry is using standard.
Therefore, wiring tool of the invention a, including work block；One binder course is arranged in the side of the work block；One
One these diamond layers, first these diamond layers are formed in side of the binder course far from the work block and direct with a chemical vapour deposition technique
The binder course is contacted, which has a simple layer structure；And a dozen the end of a thread, setting are separate in first these diamond layers
The side of the binder course is simultaneously in direct contact first these diamond layers, and the routing head is passed through by a diamond micro mist and a silicon carbide micro-powder
It is formed by a sintering processes.
In an embodiment of the present invention, which includes also one second these diamond layers, is with a chemical vapour deposition technique
It is formed in the side of the routing head far from first these diamond layers.
In an embodiment of the present invention, also include a middle layer between second these diamond layers and the routing head.
In an embodiment of the present invention, the material of the work block is to select free iron-nickel alloy, teleoseal, iron nickel chromium triangle to close
Gold, iron cochrome, and combinations thereof the group that is formed.
In an embodiment of the present invention, the material of the binder course is a solder, and the solder include at least one select it is free it is silver-colored,
Copper, indium, titanium, chromium, boron, silicon, iron, carbon, nickel, its alloy, and combinations thereof the group that is formed.
In an embodiment of the present invention, the volume in the routing head shared by the diamond micro mist is more than shared by the silicon carbide micro-powder
Volume.
In an embodiment of the present invention, which separately has one to be situated between at 0.1 μm with the silicon carbide micro-powder
Grain size between 50 μm.
In an embodiment of the present invention, which is a list being mixed to form by the diamond micro mist and the silicon carbide micro-powder
One layer of structure.
Therefore the attainable effect of institute is the present invention compared to the prior art：
(1) solder is only transmitted in the prior art as a binder course to engage a dozen the end of a thread and a work block, the only weldering
The engaging force of material still has an improved space, the present invention by the routing head a non-working surface (namely the routing head with should
Between binder course) first these diamond layers are formed with chemical vapour deposition technique, which can jointly strengthen with the binder course
Engaging force between the routing head and the work block.
(2) it is found via actual test, first these diamond layers formed on the non-working surface of the routing head can be effective
Ground improves the problem on deformation that the wiring tool often occurs at high operating temperatures.
(3) in an embodiment of the present invention, other than forming first these diamond layers in the non-working surface of the wiring tool,
Also second these diamond layers are formed in the working face of the routing head, further improves the abrasion performance degree of the wiring tool.
(4) for the prior art in the case where the routing head is porous material, the flatness of the wiring tool still has improvement empty
Between, and the present invention is further arranged first these diamond layers and second these diamond layers and helps to promote the smooth of the wiring tool
Degree.
(5) in wiring tool of the invention, the work block, the binder course, first these diamond layers, second these diamond layers, with
And the routing head is conducive to the progress of processing with conductive material forms and has superior electrical conductivity.
Description of the drawings
Fig. 1 is the wiring tool structural schematic diagram of first embodiment of the invention.
Fig. 2 is the wiring tool operating diagram of second embodiment of the invention.
Fig. 3 is the wiring tool structural schematic diagram of other aspects of second embodiment of the invention.
Fig. 4 is the wiring tool structural schematic diagram of other aspects of second embodiment of the invention.
Fig. 5 is the wiring tool structural schematic diagram of third embodiment of the invention.
Fig. 6 is that first embodiment of the invention, second embodiment, the first comparative example and the second comparative example are deformed at 500 DEG C
The test result of amount.
Specific implementation mode
It is related to detailed description of the invention and technology contents, now just cooperation schema is described as follows：
First embodiment
" Fig. 1 " is 1 structural schematic diagram of wiring tool of first embodiment of the invention, including：One work block 10；One binder course
20；A dozen the end of a thread 30；And one be folded in the first these diamond layers 40 between the binder course 20 and the routing head 30.The routing head 30
With a working face 31 and a non-working surface 32, which is formed on the non-working surface 32.
In the wiring tool 1 of the present embodiment, which may include iron-nickel alloy, teleoseal, iron nickel
Evanohm, iron cochrome or its arbitrary combination, specific example include the alloy of Invar or Kovar, and so the present invention is unlimited
In this, the metal or alloy of other low thermal coefficient of expansion also can be used.
The binder course 20 is arranged in the side of the work block 10.In this embodiment, the material of the binder course 20 is a weldering
Material, and the solder may include at least one selected from by silver, copper, indium, titanium, chromium, boron, silicon, iron, carbon, nickel, its alloy, and combinations thereof institute
The group of composition.In a non-limiting embodiment of the invention, which is preferably one silver-copper-indium-titanium alloy.
First these diamond layers 40 are with a chemical vapour deposition technique, in side shape of the binder course 20 far from the work block 10
At first these diamond layers 40, and first these diamond layers 40 directly contact the binder course 20.In an embodiment of the present invention, this
One these diamond layers 40 are the diamond film of a simple layer structure.
The routing head 30 be provided in the side of the first these diamond layers 40 far from the binder course 20 and be in direct contact this first
These diamond layers 40, that is, first these diamond layers 40 is enabled to be folded between the routing head 30 and the binder course 20.It, should in the present embodiment
Routing head 30 is formed via a sintering processes by a diamond micro mist and a silicon carbide (silicon carbide) micro mist,
In, the grain size that the diamond micro mist and the silicon carbide micro-powder are separately situated between with one between 10nm to 100 μm preferably should
Diamond micro mist and the silicon carbide micro-powder separately with the grain size between 0.1 μm to 50 μm, more preferably the diamond micro mist with
The silicon carbide micro-powder is separately with the grain size between 1 μm to 20 μm.
In the routing head 30, the volume shared by the diamond micro mist is more than the volume shared by the silicon carbide micro-powder.For example,
On the basis of the total volume of the diamond micro mist and the silicon carbide micro-powder, the diamond micro mist have one be situated between 70vol.% extremely
The percent by volume of 98vol.%；Preferably the diamond micro mist has one to be situated between in the volume basis of 75vol.% to 90vol.%
Than；More preferably the diamond micro mist has one to be situated between in the percent by volume of 78vol.% to 85vol.%；The most preferably diamond micro mist
Percent by volume with a 80vol.%.Routing head 30 in this embodiment is not by single one layer or more diamond and ceramic institute shape
At multilayered structure, an also non-formation membrane structure, but mixed with the silicon carbide micro-powder by the diamond micro mist and through a sintering
Processing procedure and the simple layer structure formed.
In practical application, the routing head 30 is fixed on the work block 10, and it is to be processed to one on a workbench 60
Object 70 carries out routing engagement.In an embodiment of the present invention, which includes a chip and an external circuit, so also
Routing demand can be coordinated and include other different components, there is no particular restriction for the object 70 to be processed by the present invention.
Second embodiment
Referring to FIG. 2, big in 1 structure of wiring tool of the wiring tool 1 of second embodiment of the invention and first embodiment
Cause it is identical, the difference is that in the present embodiment also include one second these diamond layers 50.Second these diamond layers 50 are with a chemical gaseous phase
Sedimentation is formed in the working face 31 of the routing head 30 and is in direct contact the routing head 30.
Due to the group of the work block 10 of this embodiment, the binder course 20, the routing head 30 and first these diamond layers 40
It is identical as above-mentioned first embodiment at, structure and feature, it does not in addition repeat herein.
Fig. 3 and Fig. 4 is the wiring tool schematic diagram of other state sample implementations of the invention, and the shape of the routing head 30 can be according to reality
Demand is designed adjustment and is not particularly limited, as long as sandwiched between the binder course 20 and the routing head 30 of the wiring tool 1
There are first these diamond layers 40 with simple layer structure, and optionally in the formation of the working face 31 of the routing head 30
Second these diamond layers 50 strengthen the abrasion performance degree of the working face 31.
3rd embodiment
Please refer to Fig. 5.It is big on the wiring tool 1 of third embodiment of the invention and 1 structure of wiring tool of second embodiment
It causes identical, also includes a middle layer 80 the difference is that in the present embodiment, between second these diamond layers 50 and the routing head 30.
Specifically, the wiring tool of third embodiment of the invention includes：The work block 10；It is arranged in the work block 10
The binder course 20 of side；With chemical vapour deposition technique be formed in the side of the binder course 20 far from the work block 10 this first
These diamond layers 40；The routing head 30 in the side of the first these diamond layers 40 far from the binder course 20 is set；It is arranged in the routing head
The middle layer 80 of 30 sides far from first these diamond layers 40；And the middle layer 80 is formed in far with chemical vapour deposition technique
Second these diamond layers 50 of side from the routing head 30.
In the present embodiment, the thickness of the thickness of the middle layer 80 is situated between 0.1 μm to 20 μm, preferably 0.1 μm to 5 μm
Between, and in this embodiment, which is a titanium layer.
Due to the work block 10 of this embodiment, the binder course 20, the routing head 30, first these diamond layers 40 and it is somebody's turn to do
Composition, structure and the feature of second these diamond layers 50 are identical as above-mentioned first embodiment and second embodiment, herein not in addition
It repeats.
In the wiring tool of the present invention, in addition to the work block 10 and the binder course 20 for being formed with metal are conductive
Outside, first these diamond layers 40, second these diamond layers 50 and the routing head 30 can be conductive, especially first brill
Rock layers 40 and second these diamond layers 50, for example, can with the chemical vapour deposition technique formed first these diamond layers 40 with
And make material that it can be conductive (such as doping boron, nitrogen phosphate and sulfur, lithium by doping during second these diamond layers 50
Deng) to achieve the effect that make first these diamond layers 40 and second these diamond layers 50 conductive.First these diamond layers 40 are somebody's turn to do
The purpose that second these diamond layers 50 and the routing head 30 all have electric conductivity is that electro-discharge machining can be carried out, such as processing is formed
One aspirating hole, with the progress of a sharp routing processing procedure.
First comparative example
In the first comparative example, other than first these diamond layers 40 are not formed in the non-working surface 32 of the routing head 30,
Remaining composed structure and material are identical as the wiring tool 1 of first embodiment.
Second comparative example
In the second comparative example, in addition to the material of the routing head 30 is silicon carbide (SiC), and the non-working surface 32 is not formed
Have outside first these diamond layers 40, remaining composed structure and material are identical as the wiring tool 1 of second embodiment.
Experimental example
Further compared using laser interferometer measurement first embodiment, second embodiment, the first comparative example and second
Example is in the operation 6,000,000 times to 8,000,000 times of (450 DEG C -510 DEG C) of operating temperature, a practical high temperature deformation of the wiring tool 1
Amount, actual test result is referring to FIG. 6, its test temperature is 500 DEG C.
In the first embodiment of the present invention, it is in the non-working surface 32 formation of the routing head 30 first these diamond layers
40, therefore the high temperature deformation that the practical high temperature deformation amount of the wiring tool 1 is the routing head 30 and first these diamond layers 40
Between the summation of amount, that is, 1.00 μm to 2.50 μm, preferably between 1.00 μm to 1.80 μm, more preferably 1.5 μm or so；?
It is that the non-working surface 32 in the routing head 30 and the working face 31 are respectively formed this simultaneously in the second embodiment of the present invention
First these diamond layers 40 and second these diamond layers 50, thus the practical high temperature deformation amount of the wiring tool 1 be the routing head 30,
The summation of the high temperature deformation amount of first these diamond layers 40 and second these diamond layers 50, that is, 0.05 μm to 1.00 μm it
Between, preferably between 0.05 μm to 0.25 μm, more preferably 0.15 μm or so.Referring to Fig. 6, being implemented for the first of the present invention
The result that example, second embodiment, the first comparative example and the second comparative example are tested, wherein do not form first these diamond layers 40
The first comparative example (in first comparative example, which is the high temperature deformation amount of the routing head 30) and the
(in second comparative example, which is this of the routing head 30 and second these diamond layers 50 to two comparative examples
The summation of high temperature deformation amount) the practical high temperature deformation amount ranging between 3.00 μm to 5.00 μm, preferably 3.00 μm are extremely
Between 3.50 μm, more preferably 3.5 μm or so, as shown in fig. 6, the deflection of first embodiment is 1.5 μm, second embodiment
Deflection is 0.15 μm, and the deflection of the first comparative example is 3.5 μm, and the deflection of the second comparative example is 3.5 μm.Therefore, this hair
Bright first embodiment can effectively reduce the deformation extent of the wiring tool 1 under high temperature with second embodiment really.
In conclusion the advantage of the invention is that：
(1) routing head and work block are engaged as binder course through solder in the prior art, only the engaging force of the solder
Still there are improved space, the present invention to pass through a non-working surface of the routing head (namely between the routing head and the binder course)
First these diamond layers are formed with chemical vapour deposition technique, which can strengthen the routing head jointly and be somebody's turn to do with the binder course
Engaging force between work block.
(2) it is found via actual test, first these diamond layers formed on the non-working surface of the routing head can also have
Effect ground improves the problem on deformation that the wiring tool often occurs at high operating temperatures.
(3) in an embodiment of the present invention, other than forming first these diamond layers in the non-working surface of the wiring tool,
Also second these diamond layers are formed in the working face of the routing head, further strengthens the abrasion performance degree of the wiring tool.
(4) for the prior art in the case where the routing head is porous material, the flatness of the wiring tool still has improvement empty
Between, and the present invention is further arranged first these diamond layers and second these diamond layers and helps to promote the smooth of the wiring tool
Degree.
(5) in wiring tool of the invention, the work block, the binder course, first these diamond layers, second these diamond layers, with
And the routing head is conducive to the progress of processing with conductive material forms and has superior electrical conductivity.
The present invention is described in detail above, only as described above, a preferred embodiment only of the invention,
When cannot limit the scope of implementation of the present invention.It is all according to equivalent changes and modifications etc. made by the present patent application range, all should still belong to
In the patent covering scope of the present invention.
Claims (9)
1. a kind of wiring tool, which is characterized in that include：
One work block；
One binder course is arranged in the side of the work block；
One first these diamond layers are formed in side of the binder course far from the work block with a chemical vapour deposition technique and are in direct contact
The binder course, first these diamond layers have a simple layer structure；And
A dozen the end of a thread are arranged in the side of first these diamond layers far from the binder course and are in direct contact first these diamond layers, and should
Routing head is formed via a sintering processes with a silicon carbide micro-powder by a diamond micro mist.
2. wiring tool as described in claim 1, which is characterized in that also include one second these diamond layers, second these diamond layers with
One chemical vapour deposition technique is formed in the side of the routing head far from first these diamond layers.
3. wiring tool as claimed in claim 2, which is characterized in that also include one between second these diamond layers and the routing head
Middle layer.
4. wiring tool as described in claim 1, which is characterized in that the material of the work block is to select free iron-nickel alloy, iron
Nickel cobalt (alloy), iron-nickel-chromium, iron cochrome, and combinations thereof the group that is formed.
5. wiring tool as described in claim 1, which is characterized in that the material of the binder course is a solder, and the solder packet
Containing at least one select free silver, copper, indium, titanium, chromium, boron, silicon, iron, carbon, nickel, its alloy, and combinations thereof the group that is formed.
6. wiring tool as described in claim 1, which is characterized in that in the routing head, the volume shared by the diamond micro mist is big
In the volume shared by the silicon carbide micro-powder.
7. wiring tool as described in claim 1, which is characterized in that the diamond micro mist and the silicon carbide micro-powder are separately
With the grain size between 0.1 μm to 50 μm.
8. wiring tool as described in claim 1, which is characterized in that the routing head is one by the diamond micro mist and the silicon carbide
The simple layer structure that micro mist is mixed to form.
9. wiring tool as claimed in claim 2, which is characterized in that first these diamond layers, second these diamond layers and this dozen
The end of a thread all has electric conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710261140.8A CN108735617A (en) | 2017-04-20 | 2017-04-20 | Wiring tool |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710261140.8A CN108735617A (en) | 2017-04-20 | 2017-04-20 | Wiring tool |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108735617A true CN108735617A (en) | 2018-11-02 |
Family
ID=63933528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710261140.8A Pending CN108735617A (en) | 2017-04-20 | 2017-04-20 | Wiring tool |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108735617A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1116953A (en) * | 1997-06-19 | 1999-01-22 | Asahi Diamond Ind Co Ltd | Bonding tool |
| KR20100132300A (en) * | 2009-06-09 | 2010-12-17 | 프리시젼다이아몬드 주식회사 | Bonding tool and manufacturing method thereof |
| CN105840104A (en) * | 2016-03-25 | 2016-08-10 | 河南四方达超硬材料股份有限公司 | Thermal stable type high impact resistance polycrystalline diamond compact and making method thereof |
| TWM539149U (en) * | 2016-01-19 | 2017-04-01 | 中國砂輪企業股份有限公司 | Bonding tool |
-
2017
- 2017-04-20 CN CN201710261140.8A patent/CN108735617A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1116953A (en) * | 1997-06-19 | 1999-01-22 | Asahi Diamond Ind Co Ltd | Bonding tool |
| KR20100132300A (en) * | 2009-06-09 | 2010-12-17 | 프리시젼다이아몬드 주식회사 | Bonding tool and manufacturing method thereof |
| TWM539149U (en) * | 2016-01-19 | 2017-04-01 | 中國砂輪企業股份有限公司 | Bonding tool |
| CN105840104A (en) * | 2016-03-25 | 2016-08-10 | 河南四方达超硬材料股份有限公司 | Thermal stable type high impact resistance polycrystalline diamond compact and making method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4542485B2 (en) | Alumina member and manufacturing method thereof | |
| CN102738053B (en) | Electrostatic chuck | |
| CN101980810B (en) | Joint product | |
| CN109332901B (en) | Ceramic cleaver and manufacturing method and application thereof | |
| JP2015159232A (en) | Sample holding tool and plasma etching device using the same | |
| KR20220116213A (en) | Copper/ceramics bonded body, and insulated circuit board | |
| CN104711457A (en) | High temperature solder and application thereof | |
| JP2000286038A (en) | Structure and method for bonding ceramic heater and electrode terminal | |
| CN108735617A (en) | Wiring tool | |
| EP0032437A1 (en) | Thermocompression bonding tool | |
| CN102059519A (en) | Method for preparing back plate and back plate structure | |
| CN206685349U (en) | Wiring tool | |
| US6840424B2 (en) | Compression bonding tools and associated bonding methods | |
| CN113508462A (en) | Joined body, circuit board, and semiconductor device | |
| TWM539149U (en) | Bonding tool | |
| TWI641440B (en) | Line tool | |
| CN104538321B (en) | The method and application of silicon chip and molybdenum sheet welding in a kind of semiconductor devices | |
| US6489634B1 (en) | Microelectronic device structure utilizing a diamond inlay in a package flange | |
| CN103193507B (en) | Method for improving wettability of metal to SiC ceramic | |
| CN108608345B (en) | Low-temperature brazing diamond containing Cr and brazing filler metal alloy thereof | |
| JPH0782050A (en) | Junction of ceramics with metal | |
| CN106378583B (en) | A kind of High-temperature Packaging is cold-pressed the preparation method of prefabricated film with Sn/Cu/Sn | |
| TWM546598U (en) | Bonding tool | |
| JP4791865B2 (en) | Multilayer probe pins and probe cards | |
| TWI572436B (en) | A soldering structure and process of making the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181102 |
|
| WD01 | Invention patent application deemed withdrawn after publication |