CN108732872A - A kind of scan-type UVLED exposure machines and its scan method - Google Patents
A kind of scan-type UVLED exposure machines and its scan method Download PDFInfo
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- CN108732872A CN108732872A CN201810857588.0A CN201810857588A CN108732872A CN 108732872 A CN108732872 A CN 108732872A CN 201810857588 A CN201810857588 A CN 201810857588A CN 108732872 A CN108732872 A CN 108732872A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Scan-type UVLED exposure machines provided by the invention and its scan method, UVLED scanning light source units are used for outgoing beam；Line array CCD light source probe unit is set to the light-emitting surface of the UVLED scanning light sources unit, line array CCD light source probe unit is used to scan the light beam of the UVLED scanning light sources unit outgoing and detects the near field light intensity of light beam, and near field light intensity is fed back to the UVLED light source control units；The UVLED light source control units obtain the near field intensity distribution and are controlled the power supply of the UVLED scanning light sources unit according to the near field light intensity, ensure the power good of UVLED scanning light source units, so that the light beam of the UVLED scanning light sources unit outgoing is uniformly distributed in plane of exposure, light source uniformity is used for quickly detecting and is adjusted in the production operation intermittent phase so as to realize, light source is reduced and safeguards the difficulty with adjustment and improve production efficiency and yields.
Description
Technical field
The present invention relates to exposure machine technical field more particularly to a kind of scan-type UVLED exposure machines.
Background technology
Conventional exposure machine is quiet when exposure using directional light breadth illuminating method, i.e. lamp source and exposure frame
Only.So conventional exposure machine must configure complicated optical system such as compound eye, large area primary mirror sphere etc., especially determine to expose
The spherical mirror of light area, with the increase of exposure area, the cost of spherical mirror is often at the increase of geometric progression.And it because exposes
Light area causes greatly the exposure intensity of unit area to be restricted, and subsequent exposition uniformity adjustment difficulty is big, and light drift angle is opposite
It is larger, it is not suitable for proximity printing.
Scanning type exposure machine is to utilize one-dimensional array UVLED light sources, is scanned on ary Quadrature direction, by the film
On pattern transfer to substrate on, pass through development, corrosion or etching complete product making.To realize high machining accuracy,
Scanning light exposure machine uses the ultraviolet source between 350nm-410nm as lighting source.Scanning light exposure machine has become
The important equipment of microelectronic circuit manufacture at present.It is in the epoch that mercury lamp exposure machine makes the transition to UV-LED exposure machines, UV- now
LED has many advantages, such as that efficient, long lifespan and spectral line are narrow, is the perfect light source for replacing mercury lamp.
The uniformity of scan-type UVLED exposure machines on the market at present, linear light source or area source in product export just
It determines, under the flow work environment, UVLED can occur to cause conductivity changes, temperature is excessively high to draw by for example making moist at random
Situations such as playing strength retrogression can cause light source entirety uniformity to decline and be not easy to be found at this time.
Invention content
Have in view of that, it is necessary to for the non-uniform defect of exposure of the existing technology, it is uniform to provide a kind of exposure
Scan-type UVLED exposure machines.
To achieve the above object, the present invention uses following technical proposals：
On the one hand, the present invention provides a kind of scan-type UVLED exposure machines, including：UVLED scanning light sources unit, electrically
It connects the line array CCD light source probe unit of the UVLED scanning light sources unit and is electrically connected the UVLED scanning light sources unit
UVLED light source control units, wherein：
The UVLED scanning light sources unit is used for outgoing beam；
The line array CCD light source probe unit is set to the light-emitting surface of the UVLED scanning light sources unit, the linear array
CCD light source probe units are used to scan the light beam of the UVLED scanning light sources unit outgoing, and the near field light of the detection light beam
By force, and by the near field light intensity UVLED light source control units are fed back to；
The UVLED light source control units obtain the near field intensity distribution and according to the near field light intensity to described
The power supply of UVLED scanning light source units is controlled, and ensures the power good of UVLED scanning light source units, so that the UVLED
The light beam of scanning light source unit outgoing is uniformly distributed in plane of exposure.
In some preferred embodiment, the UVLED scanning light sources unit includes：Substrate is installed on the substrate
Several UVLED and the free form surface collimation lens fitted closely corresponding to the UVLED, the UVLED are sent out ultraviolet
Light forms equally distributed rectangular scanning hot spot after free form surface collimation lens collimation homogenizes in target face.
In some preferred embodiment, the UVLED scanning light sources unit further includes heat dispersion heat sink, and the substrate is set to
On the heat dispersion heat sink.
In some preferred embodiment, the heat dispersion heat sink is water-cooling or wind-cooling heat dissipating.
In some preferred embodiment, the wavelength of the UVLED is between 365nm-405nm.
In some preferred embodiment, the wavelength of several UVLED is identical or different.
In some preferred embodiment, the line array CCD light source probe unit acquires near field light intensity, the UVLED light sources
Control unit determines UVLED current floatings range and threshold value according to the near field light intensity with Monte Carlo Analogue Method, obtains
UVLED current signal digital quantization output valve DQ, and stable DQ power supplys are provided according to the DQ, so that the UVLED is scanned
The light beam of light source unit outgoing is uniformly distributed in plane of exposure.
On the other hand, the present invention provides a kind of scan method of scan-type UVLED exposure machines, include the following steps：
Step S110：The UVLED scanning light sources unit outgoing beam；
Step S120：The line array CCD light source probe unit scan UVLED scanning light sources unit outgoing light beam and
The near field light intensity of the light beam is detected, and the near field light intensity is fed back into the UVLED light source control units；
Step S130：The UVLED light source control units obtain the near field light intensity and according to the near field light intensity to institute
The power supply for stating UVLED scanning light source units is controlled, and ensures the power good of UVLED scanning light source units, so that described
The light beam of UVLED scanning light source units outgoing is uniformly distributed in plane of exposure.
In some preferred embodiment, in step s 130, the UVLED light source control units obtain the near field light intensity
And the UVLED scanning light sources unit is controlled according to the near field light distribution, so that the UVLED scanning light sources unit
The light beam of outgoing is uniformly distributed in plane of exposure, is included the following steps：
Step S131：The UVLED light source control units obtain the near field light intensity；
Step S132：The UVLED light source control units are determined according to the near field light intensity with Monte Carlo Analogue Method
UVLED current floatings range and threshold value obtain UVLED current signal digital quantization output valves DQ；
Step S133：The UVLED light source control units provide surely according to the DQ for the UVLED scanning light sources unit
Fixed DQ power supplys；
Step S134：The line array CCD light source probe unit continues the near field light intensity feeding back to the UVLED light sources
Control unit returns to previous step if the near field light intensity intensity stabilization；If the near field light intensity single-point intensity is abnormal, carry out down
One step；
Step S135：The line array CCD light source probe unit carries out image procossing to the near field light intensity of detection, different to intensity
Normal single or more UVLED is addressed, obtains abnormal UVLED；
Step S136：The UVLED light source control units obtain abnormal UVLED, and return to step S132.
The present invention use above-mentioned technical proposal the advantages of be：
Scan-type UVLED exposure machines provided by the invention and its scan method, including UVLED scanning light sources unit, linear array
CCD light sources probe unit and UVLED light source control units, the UVLED scanning light sources unit are used for outgoing beam；The linear array
CCD light source probe units are set to the light-emitting surface of the UVLED scanning light sources unit, and the line array CCD light source probe unit is used
In the light beam for scanning UVLED scanning light sources unit outgoing, and the near field light intensity of the detection light beam, and by the near field light
The UVLED light source control units are fed back to by force；The UVLED light source control units obtain the near field intensity distribution and basis
The near field light intensity controls the power supply of the UVLED scanning light sources unit, ensures the power supply of UVLED scanning light source units
Stablize, so that the light beam of UVLED scanning light sources unit outgoing is uniformly distributed in plane of exposure, makees in production so as to realize
The industry intermittent phase is used for quickly detecting and adjusts to light source uniformity, reduces light source and safeguards the difficulty with adjustment and improve production efficiency
And yields.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram for the scan-type UVLED exposure machines that the embodiment of the present invention 1 provides.
Fig. 2 is the structural schematic diagram of the UVLED scanning light source units for the UVLED exposure machines that the embodiment of the present invention 1 provides.
Fig. 3 is the scan method flow chart of steps for the scan-type UVLED exposure machines that the embodiment of the present invention 2 provides.
The UVLED light source control units that Fig. 4 provides for the embodiment of the present invention 2 obtain the near field light intensity and according to institutes
It states near field light distribution to control the UVLED scanning light sources unit, so that the light of UVLED scanning light sources unit outgoing
Beam is in the equally distributed flow chart of steps of plane of exposure.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts all other
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1
Referring to Fig. 1, for the structural schematic diagram of scan-type UVLED exposure machines 10 provided in an embodiment of the present invention, including：
UVLED scanning light sources unit 110, the line array CCD light source probe unit 120 for being electrically connected the UVLED scanning light sources unit 110
And it is electrically connected the UVLED light source control units 130 of the UVLED scanning light sources unit 110.
Referring to Fig. 2, the structural schematic diagram of the UVLED scanning light sources unit 110 provided for the embodiment of the present invention 1.
In the present embodiment, the UVLED scanning light sources unit 110 includes：Substrate 111 is installed on the substrate 111
Several UVLED 112 and the free form surface collimation lens 113 that is fitted closely corresponding to the UVLED 112.
It is appreciated that the bottom of free form surface collimation lens 113 is fitted closely with UVLED 112, the UVLED 112 is sent out
The ultraviolet light gone out can carry out the ultraviolet light that 112 arrays of UVLED are sent out after the free form surface collimation lens 113
Collimation is homogenized, so that it is narrowed to scheduled angle (light drift angle minimum reaches ± 2 °), forms the scanning light spot of rectangle.
In the present embodiment, the wavelength of the UVLED 112 is between 365nm-405nm, and several UVLED 112
The UVLED of single Single wavelength or more different wave lengths is selected to be combined, to form multiband uv-exposure.
In some preferred embodiments, the UVLED scanning light sources unit 110 further includes heat dispersion heat sink 114, the base
Plate 111 is set on the heat dispersion heat sink 114, so as to effectively radiate.
In some preferred embodiments, the heat dispersion heat sink 114 is water-cooling or wind-cooling heat dissipating.
The working method for the scan-type UVLED exposure machines 10 that the embodiment of the present invention 1 described further below provides：
110 outgoing beam of UVLED scanning light sources unit, the line array CCD light source probe unit 120 are set to described
The light-emitting surface of UVLED scanning light sources unit 110, the line array CCD light source probe unit scan the UVLED scanning light sources unit
The light beam of 110 outgoing and the near field light intensity of the detection light beam, and the near field light intensity is fed back into the UVLED light source controls
Unit 130.
The UVLED light source control units 130 obtain the near field intensity distribution and according to the near field light intensity to described
The power supply of UVLED scanning light sources unit 110 is controlled, and ensures the power good of UVLED scanning light sources unit 110, so that institute
The light beam for stating the outgoing of UVLED scanning light sources unit 110 is uniformly distributed in plane of exposure.
In some preferred embodiments, the line array CCD light source probe unit 120 can acquire near field light intensity, described
UVLED light source control units 130 according to the near field light intensity with Monte Carlo Analogue Method determine UVLED current floatings range and
Threshold value obtains UVLED current signal digital quantization output valve DQ, and provides stable DQ power supplys according to the DQ, so that described
The light beam of UVLED scanning light source units outgoing is uniformly distributed in plane of exposure.
It is commonly to have single or more UVLED it is appreciated that when there is far field (plane of exposure) uniform light sexual abnormality
There is exception in intensity, can be detected obtain by line array CCD light source probe unit 120 at this time, line array CCD light source probe unit 120
According to the signal of acquisition by image procossing, single or more UVLED abnormal to intensity is addressed, and by abnormal UVLED
UVLED light source control units 130 are fed back to, determine that UVLED electric currents are floating with Monte Carlo Analogue Method according to the near field light intensity
Dynamic range and threshold value obtain UVLED current signal digital quantization output valve DQ, and provide stable DQ power supplys according to the DQ,
So that the light beam of the UVLED scanning light sources unit outgoing is uniformly distributed in plane of exposure, to ensure near field light intensity longtime running
In uniformity it is constant, improve the reliability of exposure process.
Embodiment 2
Referring to Fig. 3, the scan method flow chart of steps of the scan-type UVLED exposure machines provided for the embodiment of the present invention 2,
Include the following steps：
Step S110：110 outgoing beam of UVLED scanning light sources unit；
Step S120：The line array CCD light source probe unit 120 scans what the UVLED scanning light sources unit 110 was emitted
The near field light intensity of light beam and the detection light beam, and the near field light intensity is fed back into the UVLED light source control units 130；
Step S130：The UVLED light source control units 130 obtain the near field light intensity and according to the near field light intensity pair
The power supply of the UVLED scanning light sources unit 110 is controlled, and ensures the power good of UVLED scanning light sources unit 110, with
The light beam that the UVLED scanning light sources unit 130 is emitted is set to be uniformly distributed in plane of exposure.
Referring to Fig. 4, in step s 130, the UVLED light source control units obtain the near field light intensity and according to institutes
It states near field light distribution to control the UVLED scanning light sources unit, so that the light of UVLED scanning light sources unit outgoing
Beam is uniformly distributed in plane of exposure, is included the following steps：
Step S131：The UVLED light source control units obtain the near field light intensity；
Step S132：The UVLED light source control units are determined according to the near field light intensity with Monte Carlo Analogue Method
UVLED current floatings range and threshold value obtain UVLED current signal digital quantization output valves DQ；
Step S133：The UVLED light source control units provide surely according to the DQ for the UVLED scanning light sources unit
Fixed DQ power supplys；
Step S134：The line array CCD light source probe unit continues the near field light intensity feeding back to the UVLED light sources
Control unit returns to previous step if the near field light intensity intensity stabilization；If the near field light intensity single-point intensity is abnormal, carry out down
One step；
Step S135：The line array CCD light source probe unit carries out image procossing to the near field light intensity of detection, different to intensity
Normal single or more UVLED is addressed, obtains abnormal UVLED；
Step S136：The UVLED light source control units obtain abnormal UVLED, and return to step S132.
It is commonly to have single or more UVLED it is appreciated that when there is far field (plane of exposure) uniform light sexual abnormality
There is exception in intensity, can be detected obtain by line array CCD light source probe unit 120 at this time, line array CCD light source probe unit 120
According to the signal of acquisition by image procossing, single or more UVLED abnormal to intensity is addressed, and by abnormal UVLED
UVLED light source control units 130 are fed back to, determine that UVLED electric currents are floating with Monte Carlo Analogue Method according to the near field light intensity
Dynamic range and threshold value obtain UVLED current signal digital quantization output valve DQ, and provide stable DQ power supplys according to the DQ,
So that the light beam of the UVLED scanning light sources unit outgoing is uniformly distributed in plane of exposure, to ensure near field light intensity longtime running
In uniformity it is constant, improve the reliability of exposure process.
Scan-type UVLED exposure machines provided by the invention and its scan method, the UVLED scanning light sources unit emergent light
Beam, the line array CCD light source probe unit scan the light beam of the UVLED scanning light sources unit outgoing and detect the light beam
Near field light intensity, and the near field light intensity is fed back into the UVLED light source control units；The UVLED light source control units obtain
It takes the near field intensity distribution and the power supply of the UVLED scanning light sources unit is controlled according to the near field light intensity, protect
The power good of UVLED scanning light source units is demonstrate,proved, so that the light beam of UVLED scanning light sources unit outgoing is uniform in plane of exposure
Distribution, is used for quickly detecting and adjusts to light source uniformity in the production operation intermittent phase so as to realize, reduces light source and safeguards
With the difficulty of adjustment and improve production efficiency and yields.
Certainly the scan-type UVLED exposure machines of the present invention can also have a variety of transformation and remodeling, it is not limited to above-mentioned reality
Apply the concrete structure of mode.In short, protection scope of the present invention should to those skilled in the art be shown including those
And the transformation being clear to or replacement and remodeling.
Claims (9)
1. a kind of scan-type UVLED exposure machines, which is characterized in that including：Described in UVLED scanning light sources unit, electric connection
The line array CCD light source probe unit of UVLED scanning light source units and the UVLED for being electrically connected the UVLED scanning light sources unit
Light source control unit, wherein：
The UVLED scanning light sources unit is used for outgoing beam；
The line array CCD light source probe unit is set to the light-emitting surface of the UVLED scanning light sources unit, the line array CCD light
Source detection unit is used to scan the light beam of the UVLED scanning light sources unit outgoing, and the near field light intensity of the detection light beam, and
The near field light intensity is fed back into the UVLED light source control units；
The UVLED light source control units obtain the near field intensity distribution and are swept to the UVLED according to the near field light intensity
The power supply for retouching light source unit is controlled, and ensures the power good of UVLED scanning light source units, so that the UVLED scans light
The light beam of source unit outgoing is uniformly distributed in plane of exposure.
2. scan-type UVLED exposure machines as described in claim 1, which is characterized in that the UVLED scanning light sources unit packet
It includes：Substrate, several UVLED being installed on the substrate and the free form surface fitted closely corresponding to the UVLED are accurate
Straight lens, the ultraviolet light that the UVLED is sent out is after free form surface collimation lens collimation homogenizes, the shape in target face
At equally distributed rectangular scanning hot spot.
3. scan-type UVLED exposure machines as claimed in claim 2, which is characterized in that the UVLED scanning light sources unit also wraps
Heat dispersion heat sink is included, the substrate is set on the heat dispersion heat sink.
4. scan-type UVLED exposure machines as claimed in claim 2, which is characterized in that the heat dispersion heat sink be water-cooling or
Person's wind-cooling heat dissipating.
5. scan-type UVLED exposure machines as claimed in claim 2, which is characterized in that the wavelength of the UVLED is in 365nm-
Between 405nm.
6. scan-type UVLED exposure machines as claimed in claim 5, which is characterized in that the wavelength of several UVLED it is identical or
Person is different.
7. scan-type UVLED exposure machines as described in claim 1, which is characterized in that the line array CCD light source probe unit is adopted
Collect near field light intensity, the UVLED light source control units determine UVLED electricity according to the near field light intensity with Monte Carlo Analogue Method
Domain of walker and threshold value are flowed, obtains UVLED current signal digital quantization output valve DQ, and provide stable DQ electricity according to the DQ
Source, so that the light beam of UVLED scanning light sources unit outgoing is uniformly distributed in plane of exposure.
8. a kind of scan method of scan-type UVLED exposure machines as described in claim 1, which is characterized in that including following steps
Suddenly：
Step S110：The UVLED scanning light sources unit outgoing beam；
Step S120：The line array CCD light source probe unit scans light beam and the detection of the UVLED scanning light sources unit outgoing
The near field light intensity of the light beam, and the near field light intensity is fed back into the UVLED light source control units；
Step S130：The UVLED light source control units obtain the near field light intensity and according to the near field light intensity to described
The power supply of UVLED scanning light source units is controlled, and ensures the power good of UVLED scanning light source units, so that the UVLED
The light beam of scanning light source unit outgoing is uniformly distributed in plane of exposure.
9. the scan method of scan-type UVLED exposure machines as claimed in claim 8, which is characterized in that in step s 130, institute
It states UVLED light source control units and obtains the near field light intensity and according to the near field light distribution to the UVLED scanning light sources list
Member is controlled, so that the light beam of UVLED scanning light sources unit outgoing is uniformly distributed in plane of exposure, is included the following steps：
Step S131：The UVLED light source control units obtain the near field light intensity；
Step S132：The UVLED light source control units determine UVLED according to the near field light intensity with Monte Carlo Analogue Method
Current floating range and threshold value obtain UVLED current signal digital quantization output valves DQ；
Step S133：The UVLED light source control units provide according to the DQ for the UVLED scanning light sources unit stable
DQ power supplys；
Step S134：The line array CCD light source probe unit continues the near field light intensity feeding back to the UVLED light source controls
Unit returns to previous step if the near field light intensity intensity stabilization；If the near field light intensity single-point intensity is abnormal, carry out in next step；
Step S135：The line array CCD light source probe unit carries out image procossing to the near field light intensity of detection, abnormal to intensity
Single or more UVLED is addressed, obtains abnormal UVLED；
Step S136：The UVLED light source control units obtain abnormal UVLED, and return to step S132.
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| CN112305875A (en) * | 2020-12-01 | 2021-02-02 | 张家港奇点光电科技有限公司 | Ultraviolet scanning exposure light source of scanning exposure machine and light homogenizing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112305875A (en) * | 2020-12-01 | 2021-02-02 | 张家港奇点光电科技有限公司 | Ultraviolet scanning exposure light source of scanning exposure machine and light homogenizing method thereof |
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