CN108732610A - A kind of Faraday apparatus of novel measurement ion beam - Google Patents
A kind of Faraday apparatus of novel measurement ion beam Download PDFInfo
- Publication number
- CN108732610A CN108732610A CN201710273866.3A CN201710273866A CN108732610A CN 108732610 A CN108732610 A CN 108732610A CN 201710273866 A CN201710273866 A CN 201710273866A CN 108732610 A CN108732610 A CN 108732610A
- Authority
- CN
- China
- Prior art keywords
- faraday
- bondstone
- cup
- ion beam
- ink cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2964—Scanners
- G01T1/2971—Scanners using solid state detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
Abstract
The invention discloses a kind of Faraday apparatus of novel measurement ion beam, including：Level surveys bondstone ink cup (1), vertical bondstone ink cup (2), faraday's cavity (3), permanent magnet (4), the signal acquiring board (5) surveyed supports device (6), water cooling plant (7).Level is surveyed bondstone ink cup (1), vertical survey bondstone ink cup array (2) and permanent magnet (4) and is placed in faraday's cavity (3), and it provides fixed by support device (5) jointly and supports, supporting has cooling water channel to provide water cooling for faraday in device supports, collected signal is drawn by signal acquiring board.The present invention relates to ion implantation apparatus, are under the jurisdiction of field of semiconductor manufacture.
Description
Technical field
The present invention relates to a kind of IC manufacturing control system, i.e. ion implantation apparatus, particularly it is a kind of for from
The measurement Faraday apparatus of the novel plasma beam of sub- implanter.
Background technology
With the raising of integrated circuit processing technique, to ion implantation device, more stringent requirements are proposed, for injection from
The requirements such as the stream of beamlet strong, beam section, Density Distribution increasingly improve, and by rationally controlling beam parameters, ensure the uniform of line
Property and stability, the industrialization of quality and ion implantation apparatus for injecting product have a great impact.Want control line
Uniformity and stability, it is necessary to which there are one the device measured for line parameters and Density Distribution, real-time onlines pair
It is analyzed and is detected in beam status, ensure the quality and stabilization of injection technology.
Ensure good product quality, it is necessary to have sternly for parameter, Density Distribution, the angle too section size of ion beam
The control of lattice, the Faraday apparatus accurately measured for beam parameters to one are particularly significant.
Invention content
The invention discloses a kind of Faraday apparatus of novel measurement ion beam, can be used for the ion implantation apparatus course of work
In, in real time detect line two dimensional cross-section shape, the parameters such as Density Distribution, in order to control line provide data feedback.
The invention is realized by the following technical scheme：
1. a kind of Faraday apparatus of novel measurement ion beam, including：Level surveys bondstone ink cup (1), vertical survey bondstone ink
Cup (2), faraday's cavity (3), permanent magnet (4), signal acquiring board (5) support device (6), water cooling plant (7).Its feature exists
In：By the way of two-dimentional faraday's array, for measuring the Two dimensional Distribution of plasma beam, including beam profile shape with it is close
Degree distribution etc..
2. a kind of Faraday apparatus of novel measurement ion beam, it is characterised in that by the way that long strip type level is surveyed bondstone ink cup
(1) and vertically the mode that bondstone ink cup array (2) scans in the horizontal direction is surveyed, to measure the Two dimensional Distribution of plasma line.
Wherein, horizontal bondstone ink cup mouth of surveying is rectangle, and quantity is 1, and vertical bondstone ink cup rim of a cup of surveying is square, quantity 24
It is a.
3. a kind of Faraday apparatus of novel measurement ion beam, it is characterised in that in the graphite rim of a cup of faraday's cavity (3)
There are 6 permanent magnets (4) in position, and the magnetic field of some strength is provided in graphite rim of a cup, prevent secondary electron and other ions for
The interference of faraday's measured value ensures the accuracy of measured value.
4. a kind of Faraday apparatus of novel measurement ion beam, it is characterised in that pass through certain thickness signal acquiring board
(5) the collected current signal of graphite cup is exported, while graphite cup and cavity is isolated, guarantee has good insulation effect.
5. a kind of Faraday apparatus of novel measurement ion beam, it is characterised in that pass through certain thickness support device (6)
With cooling device (7), faraday is provided and carries out flowing water cooling during the work time, ensures that it is operated in suitable temperature ranges
It is interior.
The present invention has following remarkable advantage：
1. compact-sized, dismounting is easy to maintain.
2. perfect in shape and function has wide range of applications.
3. performance is stablized, high certainty of measurement.
Description of the drawings
Fig. 1 ion beams measure Faraday apparatus general assembly drawing
Fig. 2 faraday's cavity body structure figures
Fig. 3 graphite cup magnetic field simulation figures
Fig. 4 measures graphite cup structure chart
Fig. 5 cooling water channel distribution maps
Specific implementation mode
1, attached drawing 2, attached drawing 3, attached drawing 4 and attached drawing 5 are further introduced the present invention below in conjunction with the accompanying drawings, but not as
Limitation of the invention.
Referring to Fig. 1, Fig. 2, Fig. 3, Fig. 4 and attached drawing 5, a kind of Faraday apparatus of novel measurement ion beam, including：Level is surveyed
Bondstone ink cup (1), vertical bondstone ink cup (2), faraday's cavity (3), permanent magnet (4), the signal acquiring board (5) surveyed support device
(6), water cooling plant (7).It is characterized in that：By the way of two-dimentional faraday's array, for measuring the two dimension of plasma beam
Distribution, including beam profile shape and Density Distribution etc..
In this embodiment, existed by the way that long strip type level is surveyed bondstone ink cup (1) and surveys bondstone ink cup array (2) vertically
The mode of horizontal direction scanning, to measure the Two dimensional Distribution of plasma line.Wherein, horizontal bondstone ink cup mouth of surveying is rectangular
Shape, quantity are 1, and vertical bondstone ink cup rim of a cup of surveying is square, and quantity is 24.
In this embodiment, there are 6 permanent magnets (4) in the graphite rim of a cup position of faraday's cavity (3), in graphite rim of a cup
It is provided with the magnetic field of some strength, prevents the interference of secondary electron and other ions for faraday's measured value, ensures measured value
Accuracy.
In this embodiment, the collected current signal of graphite cup is led by certain thickness signal acquiring board (5)
Go out, while graphite cup and cavity is isolated, guarantee has good insulation effect.
In this embodiment, by certain thickness support device (6) and cooling device (7), faraday is provided in work
Flowing water cooling is carried out during making, ensures that it is operated in suitable temperature ranges.
The specific embodiment of patent of the present invention elaborates the content of patent of the present invention.To the general skill in this field
For art personnel, to any obvious change that it is done under the premise of without departing substantially from patent spirit of the present invention, all constitute
Infringement to patent of the present invention will undertake corresponding legal liabilities.
Claims (5)
1. a kind of Faraday apparatus of novel measurement ion beam, including：Level surveys bondstone ink cup (1), vertical survey bondstone ink cup
(2), faraday's cavity (3), permanent magnet (4), signal acquiring board (5) support device (6), water cooling plant (7).It is characterized in that：
By the way of two-dimentional faraday's array, for measuring the Two dimensional Distribution of plasma beam, including beam profile shape and density
Distribution etc..
2. a kind of Faraday apparatus of novel measurement ion beam as described in claim 1, it is characterised in that by by long strip type
Level surveys bondstone ink cup (1) and the vertical mode surveyed bondstone ink cup array (2) and scanned in the horizontal direction, to measure plasma beam
The Two dimensional Distribution of stream.Wherein, horizontal bondstone ink cup mouth of surveying is rectangle, and quantity is 1, and vertical bondstone ink cup rim of a cup of surveying is pros
Shape, quantity are 24.
3. a kind of Faraday apparatus of novel measurement ion beam as described in claim 1, it is characterised in that in faraday's cavity
(3) there are 6 permanent magnets (4) in graphite rim of a cup position, and the magnetic field of some strength is provided in graphite rim of a cup, prevent secondary electron and
Interference of other ions for faraday's measured value, ensures the accuracy of measured value.
4. a kind of Faraday apparatus of novel measurement ion beam as described in claim 1, it is characterised in that pass through certain thickness
Signal acquiring board (5) the collected current signal of graphite cup is exported, while graphite cup and cavity is isolated, guarantee has good
Insulation effect.
5. a kind of Faraday apparatus of novel measurement ion beam as described in claim 1, it is characterised in that pass through certain thickness
Support device (6) and cooling device (7), faraday is provided and carries out flowing water cooling during the work time, ensures that it is operated in
In suitable temperature ranges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710273866.3A CN108732610B (en) | 2017-04-25 | 2017-04-25 | Novel Faraday device for measuring ion beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710273866.3A CN108732610B (en) | 2017-04-25 | 2017-04-25 | Novel Faraday device for measuring ion beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108732610A true CN108732610A (en) | 2018-11-02 |
| CN108732610B CN108732610B (en) | 2020-12-25 |
Family
ID=63934683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710273866.3A Active CN108732610B (en) | 2017-04-25 | 2017-04-25 | Novel Faraday device for measuring ion beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108732610B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786419A (en) * | 2019-11-01 | 2021-05-11 | 住友重机械离子科技株式会社 | Ion implantation device and beam analyzer |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1179003A (en) * | 1996-08-02 | 1998-04-15 | 易通公司 | Ion beam neutralizing method and apparatus |
| US6507033B1 (en) * | 1999-03-29 | 2003-01-14 | The Regents Of The University Of California | Versatile, high-sensitivity faraday cup array for ion implanters |
| CN1477984A (en) * | 2000-11-30 | 2004-02-25 | 赛米奎珀公司 | Ion implantation system and control method |
| CN101615578A (en) * | 2009-07-23 | 2009-12-30 | 中国科学院微电子研究所 | Be used to detect the Faraday cup of plasma immersion implantation dosage |
| CN101847559A (en) * | 2009-03-25 | 2010-09-29 | 中国科学院微电子研究所 | Faraday device used for detecting implantation dose of plasma |
| CN102005362A (en) * | 2009-09-03 | 2011-04-06 | 北京中科信电子装备有限公司 | Calibration system and calibration method for dual-Faraday cup measuring ratios of ion implantation machine |
| CN102867722A (en) * | 2011-07-05 | 2013-01-09 | 北京中科信电子装备有限公司 | Device for detecting ion beam profile density distribution and ion beam uniformity distribution in real time |
| US20130035897A1 (en) * | 2009-09-29 | 2013-02-07 | Varian Semiconductor Equipment Associates, Inc | Ion beam incident angle detection assembly and method |
| CN103779161A (en) * | 2012-11-08 | 2014-05-07 | 北京中科信电子装备有限公司 | Broadband beam scanning method for uniform ion implantation |
| CN103792566A (en) * | 2013-07-18 | 2014-05-14 | 北京中科信电子装备有限公司 | Faraday device for measuring beam current |
| CN105895479A (en) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | Ion beam detection device |
-
2017
- 2017-04-25 CN CN201710273866.3A patent/CN108732610B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1179003A (en) * | 1996-08-02 | 1998-04-15 | 易通公司 | Ion beam neutralizing method and apparatus |
| US6507033B1 (en) * | 1999-03-29 | 2003-01-14 | The Regents Of The University Of California | Versatile, high-sensitivity faraday cup array for ion implanters |
| CN1477984A (en) * | 2000-11-30 | 2004-02-25 | 赛米奎珀公司 | Ion implantation system and control method |
| CN101847559A (en) * | 2009-03-25 | 2010-09-29 | 中国科学院微电子研究所 | Faraday device used for detecting implantation dose of plasma |
| CN101615578A (en) * | 2009-07-23 | 2009-12-30 | 中国科学院微电子研究所 | Be used to detect the Faraday cup of plasma immersion implantation dosage |
| CN102005362A (en) * | 2009-09-03 | 2011-04-06 | 北京中科信电子装备有限公司 | Calibration system and calibration method for dual-Faraday cup measuring ratios of ion implantation machine |
| US20130035897A1 (en) * | 2009-09-29 | 2013-02-07 | Varian Semiconductor Equipment Associates, Inc | Ion beam incident angle detection assembly and method |
| CN102867722A (en) * | 2011-07-05 | 2013-01-09 | 北京中科信电子装备有限公司 | Device for detecting ion beam profile density distribution and ion beam uniformity distribution in real time |
| CN103779161A (en) * | 2012-11-08 | 2014-05-07 | 北京中科信电子装备有限公司 | Broadband beam scanning method for uniform ion implantation |
| CN103792566A (en) * | 2013-07-18 | 2014-05-14 | 北京中科信电子装备有限公司 | Faraday device for measuring beam current |
| CN105895479A (en) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | Ion beam detection device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786419A (en) * | 2019-11-01 | 2021-05-11 | 住友重机械离子科技株式会社 | Ion implantation device and beam analyzer |
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| Publication number | Publication date |
|---|---|
| CN108732610B (en) | 2020-12-25 |
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