CN108732187A - A kind of fast evaluation method of large-area graphene cleanliness factor - Google Patents

A kind of fast evaluation method of large-area graphene cleanliness factor Download PDF

Info

Publication number
CN108732187A
CN108732187A CN201710260012.1A CN201710260012A CN108732187A CN 108732187 A CN108732187 A CN 108732187A CN 201710260012 A CN201710260012 A CN 201710260012A CN 108732187 A CN108732187 A CN 108732187A
Authority
CN
China
Prior art keywords
graphene
cleanliness factor
sample
graphene sample
titanium tetrachloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710260012.1A
Other languages
Chinese (zh)
Other versions
CN108732187B (en
Inventor
刘忠范
彭海琳
林立
张金灿
孙禄钊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Peking University
Original Assignee
Peking University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Peking University filed Critical Peking University
Priority to CN201710260012.1A priority Critical patent/CN108732187B/en
Publication of CN108732187A publication Critical patent/CN108732187A/en
Application granted granted Critical
Publication of CN108732187B publication Critical patent/CN108732187B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/82Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a precipitate or turbidity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8803Visual inspection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2202Preparing specimens therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8822Dark field detection
    • G01N2021/8825Separate detection of dark field and bright field
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/07Investigating materials by wave or particle radiation secondary emission
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/60Specific applications or type of materials
    • G01N2223/652Specific applications or type of materials impurities, foreign matter, trace amounts

Abstract

The invention discloses a kind of fast evaluation methods of large-area graphene cleanliness factor.The method of the rapid evaluation large-area graphene cleanliness factor includes the following steps:In such a way that titanium tetrachloride is stifling in graphene sample deposition of titanium oxide nano particle;According to the deposition situation of the titania nanoparticles, that is, realize the assessment to graphene sample cleanliness factor;The stifling condition is as follows:Temperature is 0~30 DEG C;Humidity is 10~70%;Time is 5s~600s;The graphene sample is placed in the top of titanium tetrachloride.Compared with prior art, the beneficial effects of the present invention are:It is of low cost, easy to operate, and can realize and the big face of sample cleanliness factor is quickly characterized.

Description

A kind of fast evaluation method of large-area graphene cleanliness factor
Technical field
The present invention relates to a kind of fast evaluation methods of large-area graphene cleanliness factor, belong to Material Field.
Background technology
Graphene is a kind of to be arranged the two-dimensional film material formed according to the symmetrical honeycomb structure of six sides by single layer of carbon atom. Due to the advantageous property that graphene is shown in electricity, optics, calorifics and mechanics etc., just cause since it is found The extensive concern in each field such as physics, chemistry, biology and material.For example, single-layer graphene has the energy band knot of dirac taper Structure, at fermi level, energy and the linear dispersion relation of momentum.This unique band structure determines that graphene has pole High carrier mobility, therefore graphene is increasingly becoming the advantageous replacer of traditional silicon substrate electronic material.Since graphene is The thin-film material of monoatomic layer, absorptance are only 2.3%, in conjunction with its excellent electric conductivity and flexibility, under graphene becomes The possibility material of the flexible and transparent conductive material of a generation.
At present chemical vapor deposition method (CVD) be it is quick prepare large area, high-quality graphene thin-film material it is main Method.However, often there is the pollutant of a large amount of agraphitic carbons, and to stone in graphene surface and unholiness prepared by this method Excellent light transmittance, electric conductivity and the thermal conductivity of black alkene have adverse effect on.Therefore, it is thin quickly to assess graphene for large area The cleanliness factor of film becomes particularly important for the application of the optimization of subsequent growth technique and different cleanliness factor graphenes.Mesh The preceding assessment to the graphene surface cleanliness factor directly grown mostly uses spectrum method and carries out qualitative assessment, such as x-ray photoelectron Power spectrum, Raman spectrum, infrared spectrum etc., but assessment cycle is long, it is of high cost, and assess limited area.
Invention content
The object of the present invention is to provide a kind of fast evaluation methods of large-area graphene cleanliness factor, and the present invention is based on nanometers Particle can be with fast transferring in clean graphene surface, and reunion nucleation and growth process is easy at surface contaminant, it is difficult to migration Principle provides a kind of method of rapid evaluation graphene cleanliness factor.
A kind of method of rapid evaluation large-area graphene cleanliness factor provided by the present invention, includes the following steps:Using The stifling mode of titanium tetrachloride deposition of titanium oxide nano particle in graphene sample;According to the titania nanoparticles Deposition situation, that is, realize the assessment to graphene sample cleanliness factor.
In above-mentioned method, the stifling condition is as follows:
Temperature can be 0~30 DEG C, concretely 15~20 DEG C;
Humidity can be 10~70%, concretely 20~40%, 20% or 40%;
Time can be 5s~600s, concretely 10s~60s or 120s.
In above-mentioned method, the graphene sample is placed in the top of titanium tetrachloride, can be surface;
The vapor deposition is carried out in device for fumigation:
The device for fumigation includes beaker and matched Buchner funnel;
The graphene sample is placed in the Buchner funnel;The graphene sample level can be spread in the Bu Shi The surface of funnel, while it is flat above the steam of the titanium tetrachloride also to control the graphene sample using transmission device It moves, and then realizes greater area of TiO2The assessment of stifling and cleanliness factor;The graphene sample can also be rolled into multilayer ring-type It is vertically sprawled along the inner wall of the Buchner funnel or other sprawls mode.
The present invention can realize the adjustment to fumigating area by adjusting the size of the Buchner funnel, such as from 1 × 1cm2It arrives 400cm2Differ.
Can be used visually observe, light microscope (OM), scanning electron microscope (SEM) or transmission electron microscope (TEM) the graphene sample cleanliness factor is assessed.
Can be by its cleanliness factor of the discoloration qualitative evaluation of the graphene sample, clean graphene is in a certain range There is no agraphitic carbon adsorbate, therefore there is uniform contrast.
Include bright field image and dark field image to the characterization that titania nanoparticles are distributed using the light microscope, wherein Especially it is preferred with dark field image.
Under scanning electron microscope or transmission electron microscope observation, according to the uniform realization of contrast to graphene sample The assessment of cleanliness factor.
The principle of method based on evaluating graphite alkene cleanliness factor of the present invention, the i.e. cleanliness factor of graphene influence nano particle Distribution, and the distribution density of nano particle and rule have close relationship with its catalytic activity, therefore (utilized through this method Titania nanoparticles are deposited on graphene by stifling mode) treated, and graphene sample can be used for TiO2Fill-in light In catalysis.
Compared with prior art, the beneficial effects of the present invention are:It is of low cost, easy to operate, and can realize to sample The big face of cleanliness factor quickly characterizes.
Description of the drawings
Fig. 1 is the schematic diagram and material object that 1 foam copper of embodiment of the present invention auxiliary realizes prepared by the magnanimity of ultra-clean graphene Figure.
Fig. 2 is the typical TEM characterization results of ultra-clean graphene prepared by 1 foam copper of embodiment of the present invention auxiliary.
Fig. 3 is that 1 titanium tetrachloride of the embodiment of the present invention fumigates selective deposition titanium dioxide granule realization graphene cleanliness factor The exemplary device of assessment.
Fig. 4 is the allusion quotation of 1 titanium dioxide fumigating system large area rapid evaluation ultra-clean graphene cleanliness factor of the embodiment of the present invention Type experimental result.
Fig. 5 is that the TEM that the graphene that in the embodiment of the present invention 2 prepared by common process obtains after clean shift characterizes knot Fruit, growth temperature from left to right are followed successively by 900 DEG C, 950 DEG C and 1040 DEG C.
Fig. 6 is the selectivity of hanging graphene its surface titanium dioxide after titanium tetrachloride is stifling in the embodiment of the present invention 2 Deposition and the regularity of distribution, wherein left figure are that the typical high power transmitted electron of carbon dioxide nano particle distribution on hanging graphene is aobvious Micro mirror picture, right figure are the corresponding energy spectrum analysis in the region.
Fig. 7 is the cleanliness factor assessment that 2 titanium dioxide fumigating system of embodiment of the present invention auxiliary realizes common graphite alkene sample.
Specific implementation mode
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
The cleanliness factor of embodiment 1, the ultra-clean graphene using the method that titanium tetrachloride is fumigated prepared by foam copper auxiliary It is assessed
(1) dilute hydrochloric acid and deionized water that use quality score is 5% clean copper foil successively, and (Alfa Aesar companies give birth to Production, purity 99.8%, 25 μm of thickness), copper foil and foam copper are in close contact (it is specifically the top that foam copper is placed in copper foil, it Between spacing be 0.01~1mm, as shown in Figure 1) be placed in the casing with magnetic force control device, then casing is placed in tube furnace In, in the case where flow is the hydrogen atmosphere of 100sccm, system pressure is 100Pa, and furnace body temperature is risen to 1020 DEG C, is kept 30min;
(2) furnace body temperature is maintained at 1020 DEG C, changes hydrogen and be passed through the hydrogen gas that flow is 11sccm, is passed through flow For the methane gas of 7sccm, system pressure is 50Pa, keeps 30s;
(3) it uses magnet to haul out the casing for loading copper foil from high-temperature region, sample temperature is rapidly decreased to room temperature, cooling speed Rate is 90 DEG C/min, terminates sample grown;
(4) copper foil sample that growth finishes is taken out, be cut into suitably sized or is sampled according to equidistantly multiple, by graphite Alkene sample is placed on right over titanium tetrachloride vapors (being carried out in device as shown in Figure 3), and controlling reaction temperature is 15 DEG C, air Humidity is 40%, after fumigating 10~60s, observes the discoloration of copper foil surface and counts the distribution density of titanium dioxide.Simultaneously Sample cleaning is transferred in transmission contained network to facilitate its cleanliness factor of quantitative assessment.
Fig. 1 is the schematic diagram and pictorial diagram that foam copper auxiliary realizes prepared by the magnanimity of ultra-clean graphene.Wherein, foam copper Spacing control between copper foil influences the graphene cleanliness factor of preparation very big.Using this method, continuous surface can be once prepared Product is more than 10 × 100cm2Ultra-clean graphene sample.
Fig. 2 is the allusion quotation that ultra-clean graphene prepared by the present embodiment foam copper auxiliary carries out TEM characterizations after no glue shifts Type result.Color is deeper agraphitic carbon adsorbate caused by growth under transmission electron microscope, and ultra-clean manufactured in the present embodiment Graphene film does not have the distribution of such adsorbate, clean graphene to show uniform contrast in the range of continuous 1 micron, Illustrate that contamination-free adsorbs, it was demonstrated that the continuous cleaning area of graphene manufactured in the present embodiment reaches micro-meter scale.And unskilled labor Graphene sample prepared by skill, continuous cleaning area is only several nanometers to several tens of nanometers.
Fig. 3 is the reality for carrying out the stifling selective deposition for realizing titania nanoparticles on the surface of graphene of titanium tetrachloride Experiment device.In specific experiment, Hygrothermograph provides experiment condition and assists the fumigation time of adjustment titanium tetrachloride vapors;Copper foil ruler Very little size can be come matching by adjusting the size of beaker and Buchner funnel.The placement of copper foil can be as shown in Figure 3, is rolled into Ring-type along inner wall of hopper place, can also be rolled into it is polycyclic be placed in funnel, can also remove funnel directly right over it fumigate.
Fig. 4 is the large area that the ultra-clean graphene that the embodiment of the present invention is prepared utilizes titanium dioxide fumigating system to realize The model experiment of rapid evaluation graphene cleanliness factor it can be seen from left figure as a result, once assess area up to 20 × 20cm2With On.Due to graphene surface cleaning, the substantially not no selective deposition of titanium dioxide granule, therefore copper foil surface is smooth, color and luster It does not change.Similarly, as shown on the right, the ultra-clean graphene prepared to batch, samples every 10cm and fumigates four chlorinations Titanium steam has counted the number of titanium dioxide granule in unit area, finds numerical value perseverance less than 20, and the graphite of common cleanliness factor Alkene sample, the number of nano particle is up to more or less a hundred in equal area.
Embodiment 2, the graphene using the method that titanium tetrachloride is fumigated prepared by common CVD techniques cleanliness factor comment Estimate
(1) it is 3 to use volume ratio:1 phosphoric acid and ethylene glycol solution is as electrolyte, by copper foil (Alfa Aesar companies Production, purity 99.8%, 25 μm of thickness) connect positive, polishing treatment 30min under DC current 0.5A.Copper foil is placed in and is carried In the casing of magnetic force control device, then casing is placed in tube furnace, in the case where flow is the hydrogen atmosphere of 300sccm, by furnace body Temperature rises to 1000 DEG C, and system pressure is 300Pa, keeps 50min.
(2) furnace body temperature is maintained at 900 DEG C, 950 DEG C or 1040 DEG C, changes hydrogen and is passed through the hydrogen that flow is 500sccm Gas gas is passed through the methane gas that flow is 1sccm, and system pressure is about 500Pa, keeps 8h.
(3) it uses magnet to haul out the casing for loading copper foil from high-temperature region, sample temperature is rapidly decreased to room temperature, terminates sample Product are grown.
(4) copper foil sample that growth finishes is taken out, be cut into suitably sized or is sampled according to equidistantly multiple, by graphite Alkene sample is placed on right over carbon tetrachloride steam, and controlling reaction temperature is 15 DEG C, air humidity 40%, after fumigating 10~60s, It observes the discoloration of copper foil surface and counts the distribution density of titanium dioxide.Sample cleaning is transferred in transmission contained network simultaneously To facilitate by its cleanliness factor of assessment more quantitative TEM.Hanging graphene sample equally sees its distribution with titanium tetrachloride is stifling.
Fig. 5 is typical TEM characterization result of the graphene sample of common CVD techniques preparation after no glue cleaning transfer, from Left-to-right growth temperature is followed successively by 900 DEG C, 950 DEG C and 1040 DEG C, and the wherein deeper region of contrast has a large amount of amorphous carbon miscellaneous The enrichment of matter, corresponding continuous cleaning area is respectively 0~5nm, 10~30nm and 50~100nm from left to right;It is corresponding clean Net area proportion is respectively<30%, 30~50% and>40~60%, it is seen then that can be by adjusting carbon source kind, growth temperature Degree and copper foil modes of emplacement etc. realize that the preparation of different cleanliness factor graphenes, the present embodiment use the side for adjusting growth temperature Formula.
Fig. 6 is the distribution of common graphite alkene titania nanoparticles after titanium tetrachloride is stifling, it is found that nanometer Grain is prevalent in amorphous carbon distributed areas, and the distribution of distribution profile and amorphous carbon essentially coincides.Due to Ti atom matter Amount is big, shows as deeper contrast under the tem.Nano particle crystallinity is poor, mostly amorphous substance.Meanwhile in conjunction with element It analyzes (right figure), it is thus identified that the selective distribution (being the dense distribution of titanium dioxide at black particle) of titanium dioxide granule.Card The stifling reliability for realizing graphene cleanliness factor rapid evaluation of titanium tetrachloride is illustrated.
Fig. 7 is the model experiment knot after graphene sample rapid large-area development prepared by the common CVD techniques of the present embodiment Fruit.Since the selective deposition of titania nanoparticles is more, there is apparent discoloration, and color and unevenness in copper foil surface One.To such sample by dark field optical microscope characterization it can be found that the dense distribution of titanium dioxide granule, distribution density Corresponding to the green point in Fig. 4, hence it is evident that be more than the distribution density of ultra-clean sample surfaces titanium dioxide.Further demonstrate four chlorinations The stifling reliability for realizing graphene cleanliness factor rapid evaluation of titanium.
The stifling method of carbon tetrachloride of the present invention can qualitative more different cleanliness factor samples when large area assesses cleanliness factor The otherness of product.
Embodiment 3, the graphene using the method that titanium tetrachloride is fumigated prepared by common CVD techniques cleanliness factor comment Estimate
(1) it is 3 to use volume ratio:1 phosphoric acid and ethylene glycol solution is as electrolyte, by copper foil (Alfa Aesar companies Production, purity 99.8%, 25 μm of thickness) connect positive, polishing treatment 30min under DC current 0.5A.Copper foil is placed in and is carried In the casing of magnetic force control device, then casing is placed in tube furnace, in the case where flow is the hydrogen atmosphere of 300sccm, by furnace body Temperature rises to 1000 DEG C, and system pressure is 300Pa, keeps 50min.
(2) furnace body temperature is maintained at 1000 DEG C, changes hydrogen and be passed through the hydrogen gas that flow is 500sccm, is passed through stream Amount is the methane gas of 1sccm, and system pressure is about 500Pa, keeps 8h.
(3) it uses magnet to haul out the casing for loading copper foil from high-temperature region, sample temperature is rapidly decreased to room temperature, terminates sample Product are grown.
(4) copper foil sample that growth finishes is taken out, be cut into suitably sized or is sampled according to equidistantly multiple, by graphite Alkene sample is placed on right over carbon tetrachloride steam, and controlling reaction temperature is 20 DEG C, air humidity 20%, after fumigating 120s, is seen It examines the discoloration of copper foil surface and counts the distribution density of titanium dioxide.Simultaneously by sample cleaning be transferred to transmission contained network on Conveniently by its cleanliness factor of assessment more quantitative TEM.Hanging graphene sample equally sees its distribution with titanium tetrachloride is stifling.
The typical TEM characterization results of graphene sample prepared by the common CVD techniques of the present embodiment after no glue cleaning transfer With Fig. 5 without substantial differences, it can be seen that graphene continuous cleaning area very little, clean area occupied area ratio are generally small In 50%.
Point of the graphene that the present embodiment is prepared through common CVD techniques titania nanoparticles after titanium tetrachloride is stifling Cloth and Fig. 6 are without substantial differences, it is found that nano particle is prevalent in amorphous carbon distributed areas, distribution profile with The distribution of amorphous carbon essentially coincides.Since Ti atomic masses are big, deeper contrast is shown as under the tem.Nano particle crystallizes Property is poor, mostly amorphous substance.Meanwhile in conjunction with elemental analysis, it is thus identified that the selective distribution of titanium dioxide granule.It demonstrates The stifling reliability for realizing graphene cleanliness factor rapid evaluation of titanium tetrachloride.Graphene prepared by the common CVD techniques of the present embodiment Model experiment result after the development of sample rapid large-area, without substantial differences, it is stifling to further demonstrate titanium tetrachloride with Fig. 7 Realize the reliability of graphene cleanliness factor rapid evaluation.
Comparative example 1, the graphene using the method that titanium tetrachloride is fumigated prepared by common CVD techniques cleanliness factor comment Estimate
(1)-(3) the CVD preparation processes of graphene are the same as embodiment 2.
(4) copper foil sample that growth finishes is taken out, be cut into suitably sized or is sampled according to equidistantly multiple, by graphite Alkene sample is placed on right over carbon tetrachloride steam, and controlling reaction temperature is 60 DEG C, air humidity 100%, after fumigating 60s, is seen It examines the discoloration of copper foil surface and counts the distribution density of titanium dioxide.
In above-mentioned experiment, too acutely (temperature is too high, and humidity is too big) due to reaction condition, cause titanium tetrachloride rapidly and water Vigorous reaction, generates prodigious particulate matter, and the regularity of distribution and density can not effectively reflect graphene cleanliness factor.This comparative example Further illustrate the importance and necessity of reaction condition control.
The stifling method of carbon tetrachloride of the present invention can qualitative more different cleanliness factor samples when large area assesses cleanliness factor The otherness of product.

Claims (9)

1. a kind of method of rapid evaluation large-area graphene cleanliness factor, includes the following steps:The side fumigated using titanium tetrachloride Formula deposition of titanium oxide nano particle in graphene sample;According to the deposition situation of the titania nanoparticles, i.e., in fact Now to the assessment of graphene sample cleanliness factor.
2. according to the method described in claim 1, it is characterized in that:The stifling condition is as follows:
Temperature is 0~30 DEG C;
Humidity is 10~70%;
Time is 5s~600s.
3. method according to claim 1 or 2, it is characterised in that:The graphene sample is placed in the upper of titanium tetrachloride Side.
4. method according to any one of claim 1-3, it is characterised in that:The vapor deposition is carried out in device for fumigation:
The device for fumigation includes beaker and matched Buchner funnel;
The graphene sample is placed in the Buchner funnel.
5. according to the method described in claim 4, it is characterized in that:The graphene sample is spread in into the Buchner funnel On inner wall.
6. according to the method described in claim 5, it is characterized in that:The graphene sample is rolled into multilayer ring-type along the cloth The inner wall of family name's funnel is vertically sprawled.
7. according to the method described in claim 4, it is characterized in that:The graphene sample level is spread in into the Bu Shi leakages The surface of bucket.
8. according to the method described in claim 7, it is characterized in that:The graphene sample is controlled described using transmission device Translation above the steam of titanium tetrachloride.
9. according to the method described in any one of claim 1-8, it is characterised in that:Using visually observe, light microscope or Scanning electron microscope assesses the graphene sample cleanliness factor.
CN201710260012.1A 2017-04-20 2017-04-20 Rapid assessment method for cleanliness of large-area graphene Active CN108732187B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710260012.1A CN108732187B (en) 2017-04-20 2017-04-20 Rapid assessment method for cleanliness of large-area graphene

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710260012.1A CN108732187B (en) 2017-04-20 2017-04-20 Rapid assessment method for cleanliness of large-area graphene

Publications (2)

Publication Number Publication Date
CN108732187A true CN108732187A (en) 2018-11-02
CN108732187B CN108732187B (en) 2020-06-23

Family

ID=63933252

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710260012.1A Active CN108732187B (en) 2017-04-20 2017-04-20 Rapid assessment method for cleanliness of large-area graphene

Country Status (1)

Country Link
CN (1) CN108732187B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113916622A (en) * 2020-07-09 2022-01-11 北京石墨烯研究院 Method for evaluating cleanliness of graphene film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101033082A (en) * 2007-04-18 2007-09-12 大连理工大学 Method of preparing titanium dioxide, stannum dioxide and doping composite fiber material thereof
US20140220773A1 (en) * 2013-02-01 2014-08-07 William Marsh Rice University Fabrication of graphene nanoribbons and nanowires
CN104150459A (en) * 2014-08-05 2014-11-19 苏州巨联环保科研有限公司 Chemical method of compounding carbon nano tube/titanium dioxide composite porous aggregate
CN104568554A (en) * 2014-12-31 2015-04-29 泰州巨纳新能源有限公司 Method for observing nucleation and growth of graphene on surface of metal base
JP2016045032A (en) * 2014-08-21 2016-04-04 日本電信電話株式会社 Biomolecule detection element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101033082A (en) * 2007-04-18 2007-09-12 大连理工大学 Method of preparing titanium dioxide, stannum dioxide and doping composite fiber material thereof
US20140220773A1 (en) * 2013-02-01 2014-08-07 William Marsh Rice University Fabrication of graphene nanoribbons and nanowires
CN104150459A (en) * 2014-08-05 2014-11-19 苏州巨联环保科研有限公司 Chemical method of compounding carbon nano tube/titanium dioxide composite porous aggregate
JP2016045032A (en) * 2014-08-21 2016-04-04 日本電信電話株式会社 Biomolecule detection element
CN104568554A (en) * 2014-12-31 2015-04-29 泰州巨纳新能源有限公司 Method for observing nucleation and growth of graphene on surface of metal base

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FUYUN PEI,ET AL.: "Effective improvement of photocatalytic hydrogen evolution via a facile in-situ solvothermal N-doping strategy in N-TiO2/N-graphene nanocomposite", 《INTERNATIONAL JOURNAL OF HYDROGEN ENERGY》 *
毛兵: "高效纳米光催化复合材料的设计与合成", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113916622A (en) * 2020-07-09 2022-01-11 北京石墨烯研究院 Method for evaluating cleanliness of graphene film

Also Published As

Publication number Publication date
CN108732187B (en) 2020-06-23

Similar Documents

Publication Publication Date Title
Zappa et al. Preparation of copper oxide nanowire-based conductometric chemical sensors
Xue et al. Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets
Huang et al. Core–shell structure of zinc oxide/indium oxide nanorod based hydrogen sensors
Zeng et al. Hydrothermal synthesis of hierarchical flower-like SnO2 nanostructures with enhanced ethanol gas sensing properties
Huang et al. A facile synthesis of ZnO nanotubes and their hydrogen sensing properties
CN108069416B (en) Ultra-clean graphene and preparation method thereof
Bu Rapid synthesis of ZnO nanostructures through microwave heating process
CN107539976B (en) Method for preparing ultra-clean graphene from carbon dioxide
Feng et al. Fabrication and characterization of tetrapod-like ZnO nanostructures prepared by catalyst-free thermal evaporation
Chen et al. Effect of annealing temperature on the characteristics of ZnO thin films
Zhang et al. High performance In2 (MoO4) 3@ In2O3 nanocomposites gas sensor with long-term stability
CN107445204A (en) A kind of method for preparing transient metal chalcogenide compound nano flake and vanadium disulfide, two selenizing vanadium nano flakes
Wang et al. Control growth of catalyst-free high-quality ZnO nanowire arrays on transparent quartz glass substrate by chemical vapor deposition
Mereu et al. Synthesis, characterization and thermal decomposition study of zinc propionate as a precursor for ZnO nano-powders and thin films
Dong et al. Fabrication of ZnO nanorod arrays via electrospinning assisted hydrothermal method
Bai et al. Synthesis of zinc oxide nanosheet thin films and their improved field emission and photoluminescence properties by annealing processing
Lee et al. Investigation of the growth of few-layer SnS2 thin films via atomic layer deposition on an O2 plasma-treated substrate
Narayanan et al. Role of hexamethylenetetramine concentration on structural, morphological, optical and electrical properties of hydrothermally grown zinc oxide nanorods
Ma et al. Facile method to prepare CdS nanostructure based on the CdTe films
Kim et al. Effect of ZnCl2 concentration on the growth of ZnO by electrochemical deposition
Chuai et al. Highly sensitive sensor for noxious gases using transparent conductive CuAlO2 thin film via molecular beam epitaxy
CN108726510A (en) A kind of fast evaluation method of large area ultra-clean graphene and its magnanimity preparation method and its cleanliness factor
CN108732187A (en) A kind of fast evaluation method of large-area graphene cleanliness factor
Xu et al. Seed layer-free electrodeposition of well-aligned ZnO submicron rod arrays via a simple aqueous electrolyte
Qurashi et al. In2O3 nanostructures and their chemical and biosensor applications

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant