CN108712622A - A kind of enhanced narrow band filter and its manufacturing method - Google Patents
A kind of enhanced narrow band filter and its manufacturing method Download PDFInfo
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- CN108712622A CN108712622A CN201810847910.1A CN201810847910A CN108712622A CN 108712622 A CN108712622 A CN 108712622A CN 201810847910 A CN201810847910 A CN 201810847910A CN 108712622 A CN108712622 A CN 108712622A
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- array
- narrow band
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- electromagnetic wave
- band filter
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Abstract
The present invention relates to a kind of enhanced narrow band filter and its manufacturing method, enhanced narrow band filter includes the miniature enhancement unit array set gradually from top to bottom, periodical stereo microstructure array and the mating processing chips of CMOS；The periodicity stereo microstructure array is integrated in the mating processing chips of the CMOS.The combination that the present invention passes through miniature enhancement unit array and periodical stereo microstructure array, incident electromagnetic wave amount can be efficiently collected to a greater extent, the frequency of its filtration electromagnetic wave can be adjusted by changing simultaneously the geometric parameter of stereo microstructure, strengthened the efficient enhancing to specific electromagnetic wave band class information and precisely extracted；Realize the minimizing, is integrated, is efficient of narrow band filter, precision, intelligence；The preparation of miniature enhancement unit array and stereo microstructure can be directly carried out on the semi-finished product wafer of traditional narrow filter chip, manufacturing process is simple and convenient, manufacturing cost is low, yields is high.
Description
Technical field
The invention belongs to electromagnetic wave narrow band filter field more particularly to a kind of enhanced narrow band filter and its manufacturers
Method.
Background technology
Currently, the core component of narrow band filter, is generally matched by optical filtering planar film and the photosensitive Electric signal processings of CMOS
Cover chip composition, external world's irradiation red green blue（RGB）Filter membrane, the information of red, blue, green three wave bands in incident ray is by filter membrane point
It does not filter, the photosensitive corresponding photodiodes of Electric signal processing support chip of CMOS, photoelectric effect occurs, electric signal is collected simultaneously
A series of signal processing is carried out by support circuit, to restore the three color band image information hit contained by RGB.
But it is had the disadvantages that by existing narrow band filter：Narrow band filter uses tri- kinds of filter membranes of RGB, Zhi Nengti
The information for taking redgreenblue visible waveband, since the colour filter of these colour filters and human eye has matching deviation, so needing
Color observed by being calibrated and corrected using software under different irradiations, simultaneously because its only to extract redgreenblue visible
Band class information can not be fed back to come in and go out and hit the information of other spectrums；Filter membrane will also result in incident energy loss, while make
It is that filter membrane is pasted onto on CMOS in journey, be easy to cause alignment issues and influence projectile energy, therefore filter membrane is simultaneously in the prior art
The energy being incident on CMOS electric devices cannot directly be enhanced.
The narrow band filter of another aspect uses more than the filter disc of three more narrow bandwidths than traditional RGB, although can provide
More information, but it is generally comprised using motor-driven filter wheel, multiple narrow band filters and multilayer dielectricity interference filter disc cooperation volume
Prodigious collector lens, heavy using complicated, expensive, volume while high accurancy and precision measurement can only be in tens centimetres
It carries out, needs professional person to operate, can not be integrated in mobile terminal.
Invention content
A kind of enhanced narrow band filter and its manufacture are provided the invention aims to overcome the deficiencies in the prior art
Method can efficiently collect projectile energy, while can precisely extract more band class informations in incident information to a greater extent,
Enhance equipment imaging performance, the narrow band filter miniaturization of realization, mobile, intelligence and integrated.
In order to achieve the above objectives, the technical solution adopted by the present invention is：A kind of enhanced narrow band filter, it is characterised in that：Institute
It includes the miniature enhancement unit array set gradually from top to bottom, periodical stereo microstructure array to state enhanced narrow band filter
And the mating processing chips of CMOS；The periodicity stereo microstructure array is integrated in the mating processing chips of the CMOS.
Preferably, the miniature enhancement unit array act as the signal of enhancing incident electromagnetic wave, the miniature enhancing list
Element array is periodic arrangement, and with the periodical stereo microstructure array be in direct contact or both between be provided with wave transparent and be situated between
Matter layer.
Preferably, enhancement unit plan view shape includes but not limited in the miniature enhancement unit array：Membrane structure, circle
Shape, quadrangle and hexagon.
Preferably, the periodical stereo microstructure array includes the pixel array of multiple periodic arrangements, each pixel
Array includes the pixel unit of multiple periodic arrangements, and each pixel unit includes the pixel of multiple periodic arrangements, same picture
Pixel geometric parameter having the same in first unit, the geometric parameter include but not limited to length, radius and vertical/horizontal section
Shape.
Preferably, the size of the miniature enhancement unit in the miniature enhancement unit array can be according to the pixel dimension tune
Whole, multiple pixels are individually arrived in covering.
Preferably, the periodical stereo microstructure array is made of a kind of material, specific for filtering incident electromagnetic wave
Wavelength information.
Preferably, the mating processing chips of the CMOS are used to receive the electricity from the periodical stereo microstructure array transmission
Magnetic wave information is simultaneously converted into corresponding electric signal, and handles the electric signal, and the processing includes but not limited to：Signal
Selection, signal enhancing, signal storage.
Preferably, the periodical stereo microstructure array is made of multiple material, the periodicity stereo microstructure battle array
Row include filter element array and electromagnetic wave converting unit array, and the electromagnetic wave converting unit array is located at the filter element
Below array；The filter element array is for filtering incident electromagnetic wave specific wavelength information, the electromagnetic wave converting unit battle array
Row are for absorbing the electromagnetic wave information from the filter element array transmission and being converted into corresponding electric signal.
Preferably, for handling the electric signal, the processing includes but not limited to the mating processing chips of the CMOS：Letter
Number selection, signal enhancing, signal storage.
A kind of manufacturing method of enhanced narrow band filter, which is characterized in that include the following steps：
（1）Prepare the mating processing chip semi-finished product wafers of CMOS；
（2）Fine structure material layer, the preparation micro-structure material are prepared in the mating processing chip semi-finished product crystal column surfaces of the CMOS
The method of the bed of material includes but not limited to：Bonding, extension.
（3）Micro Process is carried out to the fine structure material layer and forms periodical stereo microstructure array, the formation period
Property stereo microstructure array approach includes but not limited to：Fine structure material layer transfer method and chemical wet etching method；
（4）Directly prepared on the periodical stereo microstructure array be packaged after miniature enhancement unit array, cut and
Test.It is described to prepare miniature enhancement unit array approach and include but not limited to：Plasticity electromagnetic wave transparent material transfer method and micro Process at
Type method.
Due to the application of the above technical scheme, the present invention has following advantages compared with prior art：
（1）Miniature enhancement unit, stereo microstructure and the mating processing chips of CMOS are integrated on same substrate, simple for process,
Yields is high, performance is more preferable, is conducive to large-scale production；
（2）Using the combination of miniature enhancement unit array and periodical stereo microstructure array, simple and convenient, what be may be implemented is narrow
It is the miniaturization of band filter, precision, integrated, intelligent；
（3）By the combination of miniature enhancement unit array and periodical stereo microstructure array, miniature enhancement unit array is utilized
Incoming electromagnetic wave energy is efficiently collected to a greater extent；
（4）The electromagnetic wave of specific frequency can be precisely filtered using stereo microstructure, change simultaneously the geometry of stereo microstructure
Parameter can adjust the frequency of its filter electromagnetic wave, to strengthen enhancing and extraction to more band class informations in incident information,
Can arbitrary more accurate frequencies or frequency range in larger scope be expanded to by the detection of red, yellow, blue three wave bands.
Description of the drawings
Technical scheme of the present invention is further explained below in conjunction with the accompanying drawings：
Attached drawing 1 is the structural schematic diagram of enhanced narrow band filter in the present invention；
Wherein：1 miniature enhancement unit array, 2 periodical stereo microstructure arrays, the mating processing chips of 3 CMOS.
Specific implementation mode
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is described in further details.
Enhanced narrow band filter of the present invention as shown in Fig. 1 includes setting gradually from top to bottom：It is incident
The miniature enhancement unit array of electromagnetic wave signal, periodical stereo microstructure array and the mating processing chips of CMOS；Periodically
Stereo microstructure array is integrated in the mating processing chips of the CMOS；Miniature enhancement unit array is periodic arrangement, is used for
Enhance the signal of incident electromagnetic wave, and with periodical stereo microstructure array be in direct contact or both between be provided with medium
Layer.
It is possible to further improve the increasing to incident electromagnetic wave signal by changing the shape of miniature enhancement unit array
Potent fruit, miniature enhancement unit array is made of miniature enhancement unit in the application, miniature enhancement unit plan view shape include but
It is not limited to：Membrane structure, circle, quadrangle and hexagon.
Further, periodical stereo microstructure array includes the pixel array of multiple periodic arrangements, each pixel battle array
Row include the pixel unit of multiple periodic arrangements, and each pixel unit includes the pixel of multiple periodic arrangements, same pixel
Pixel geometric parameter having the same in unit, the geometric parameter include but not limited to length, radius and vertical/horizontal section shape
Shape.Periodical stereo microstructure array has filtration to electromagnetic wave in the application, by changing pixel material, pixel geometry
The arrangement mode of parameter and pixel, so as to change the filtration to electromagnetic wave, to strengthen to specific electromagnetic wave wave
The efficient enhancing and precisely extraction of segment information.
Further, the miniature enhancement unit in miniature enhancement unit array 1 can be adjusted according to pixel dimension, covering one
It is a to arrive multiple pixels, so as to efficiently collect incident information to greatest extent.Wherein, the material of the miniature enhancement unit array
Matter includes but not limited to silicon, quartz, germanium, ZnS, PMMA or PC.Pixel is stereo microstructure in the application, and size is micro-nano
Rank.
The method for manufacturing enhanced narrow band filter is as follows：
（1）Get out the mating processing chip semi-finished product wafers of CMOS of not any structure including filter structure and superposition thereon；
（2）Fine structure material layer is prepared in the mating processing chip semi-finished product crystal column surfaces of CMOS（Including but not limited to semiconductor material
Material）, the method for preparing fine structure material layer can be by way of bonding or extension.Wherein fine structure material layer includes but unlimited
In using semi-conducting material.
（3）Micro Process is carried out to the fine structure material layer of preparation and forms periodical stereo microstructure array, preparation process packet
It includes but is not limited to：Fine structure material layer transfer method and chemical wet etching method；
（4）It is packaged, cuts and tests after preparing miniature enhancement unit array on periodical stereo microstructure array.It prepares
The method of miniature enhancement unit array includes but not limited to：Plasticity electromagnetic wave transparent material transfer method and the micro Process method of forming.Plasticity
Electromagnetic wave transparent material transfer method is that enhancement unit Array Model is first prepared in other materials, while in periodical stereo microstructure battle array
One layer of plasticity electromagnetic wave transparent material is coated on row；Then again by way of heat treatment or photocuring by enhancement unit Array Model shape
Shape is transferred on plasticity electromagnetic wave transparent material, to prepare miniature enhancement unit array.The micro Process method of forming is directly by wave transparent
Material preparation specifically coats one layer of electromagnetic wave transparent material, so at miniature enhancement unit array on periodical stereo microstructure array
Electromagnetic wave transparent material is directly processed by miniature enhancement unit array by laser direct-writing or other means afterwards.
Traditional narrow band filter needs filter plate being pasted onto on chip, is susceptible to alignment issues, to influence
Effect is filtered, while periodical stereo microstructure and miniature enhancement unit array are directly integrated in CMOS by complex process, the application
In mating processing chip, preparation method is simple, compatible prior art, while also avoiding alignment issues caused by bonding method.
The present invention, can be high to a greater extent by the combination of miniature enhancement unit array and periodical stereo microstructure array
Effect collects incident electromagnetic wave amount, changes simultaneously the geometric parameter of periodical stereo microstructure and can adjust the frequency of its filtration electromagnetic wave
Rate strengthens efficient enhancing and precisely extraction to specific electromagnetic wave band class information；Realize minimizing, integrating for narrow band filter
Change, high efficiency, precision, intelligence；Can directly on traditional cmos semi-finished product wafer integrated micro enhancement unit array and
Stereo microstructure, manufacturing process is simple and convenient, manufacturing cost is low, yields is high.
Embodiment one：
Periodical stereo microstructure array forms for multiple material in the present embodiment, and periodical stereo microstructure array includes up and down
Two parts, upper and lower two sections of material are made of different materials, and top half is filter element array, and lower half portion turns for electromagnetic wave
Cell array is changed, i.e. electromagnetic wave converting unit array is located at below filter element array, and filter element array is for filtering incidence
Electromagnetic wave specific wavelength information, electromagnetic wave converting unit array are believed for absorbing from the electromagnetic wave of the filter element array transmission
It ceases and is converted into corresponding electric signal, periodical stereo microstructure array can be with filter specific wavelengths electromagnetic wave information, together at this time
When can also absorb from the specific electromagnetic wave information of the transmission of filter element array and be converted into electric signal；Corresponding, the application is real
Electric signal of the mating processing chips of CMOS in example for handling the conversion of electromagnetic wave converting unit array is applied, processing includes being not limited to pair
The selection of electric signal, enhancing and storage.
Miniature enhancement unit array is to rearrange multiple miniature enhancement units of son by some cycles, poly- using optics
Burnt principle, can by the electromagnetic wave convergence on entire narrow band filter surface to periodic cylindrical stereo microstructure array,
To improve absorption of the stereo microstructure to incidence wave to a greater extent, the shape of stereo microstructure, arrangement all can be to the suction of wave
Receipts have an impact.
The optical principle of stereo microstructure is utilized in the present embodiment, i.e., interacts with stereo microstructure and optical material
Physical characteristic, different semi-conducting materials can detect the wave of different wave length section, while different geometric parameter is vertical
Bulk microstructure depends on the absorption and scattering of wavelength, specific solid using stereo microstructure to the absorption characteristic with different waves
The wavelength that micro-structure absorbs is proportional to the radius of stereo microstructure, and the wavelength of the bigger absorption of radius is bigger.
In the present embodiment, periodical stereo microstructure can be made of semi-conducting material, semi-conducting material can be silicon, germanium or
Person's GaAs, semi-conducting material can the wavelength based on desired detection and select.
The present inventor passes through many experiments, it is found that it is visible silicon cycle stereo microstructure array can absorb（380nm-
750nm）, germanium periodicity stereo microstructure array can absorb visible（600nm-1.4um）, so as to be used for visible inspection
It surveys.Periodical stereo microstructure is integrated with the effect of filter plate and signal conversion in this implementation, can absorb specific wavelength.Together
When by change stereo microstructure geometric parameter, the enhancing and extraction to more band class informations in incident information can be strengthened.
Wherein, periodical stereo microstructure array includes the i.e. sub- micro structure array of pixel array of multiple periodic arrangements,
Each pixel array includes the pixel unit of multiple periodic arrangements, and each pixel unit includes the pixel of multiple periodic arrangements
That is stereo microstructure, the stereo microstructure geometric parameter having the same absorb phase co-wavelength, micro- knot of different geometric parameter
Structure absorbs different wave length for example：The wave-length coverage that silicon stereo microstructure absorbs is 382nm-750nm, the silicon stereoscopic column of radius 45nm
The peak wavelength that shape micro-structure absorbs is about 470nm, and radius is that the peak absorbtivity wavelength of the silicon stereo microstructure of 80nm is about
870nm；If preparing nine different silicon stereo microstructure subarrays on CMOS narrow band filter chips, can capture
This 9 different periodical stereo microstructure arrays are prepared the electricity in traditional narrow band filter by the information of different-waveband in 9
On diode, so that it may to build a very small visible low-power narrow band filter.
Embodiment two：
The effect of periodical stereo microstructure is to replace filter membrane in the present embodiment, and periodical stereo microstructure is substantially lost lustre at this time
Filter plate, for filtering out in particular range of wavelengths.Periodical stereo microstructure array is by a kind of material in the embodiment of the present application
It constitutes, for filtering incident electromagnetic wave specific wavelength information.Simultaneously in the embodiment of the present application miniature enhancement unit according to pixel ruler
The very little single pixel of covering, while its plan view shape is semicircle, so as to increase to each electromagnetic wave for being incident on pixel
By force, incident electromagnetic wave information is significantly improved.The mating processing chips of CMOS are for receiving from the periodical stereo microstructure array
The electromagnetic wave information of transmission is simultaneously converted into corresponding electric signal, and handles the electric signal, and the processing includes but not
It is limited to：Signal behavior, signal enhancing, signal storage.
It in some special applications, such as needs to near-infrared or ultraviolet imagery, the three-dimensional micro- knot of silicon can be used at this time
Structure filters out visible wavelength spectrum information, while configuration near-infrared or ultraviolet quick unit below corresponding periodical microarray, from
And it can detect corresponding near-infrared or ultraviolet spectrum information.Traditional narrow band filter chip uses multiple filters or grating
It to being divided, is then detected again with CMOS, but this method will produce a large amount of image data, to subsequent image processing
It is required that it is very high, cause its imaging device volume big, expensive.The specific wavelength of different range is directed in the present embodiment, it can be with
It is filtered out using the stereo microstructure of different geometric parameter, the extraction to enhancing to specific band information in incident information.
The combination of the excessively miniature enhancement unit array of the present invention and periodical stereo microstructure array, utilizes miniature enhancement unit
Array efficiently collects projectile energy to a greater extent, while can absorb specific wavelength using solid-state stereo microstructure, simultaneously
The size of its absorbing wavelength can be adjusted by changing the geometric parameter of stereo microstructure, to strengthen to more multiband in incident information
The enhancing and extraction of information can be expanded to a certain range of arbitrary multiband by the detection of red, yellow, blue three wave bands,
Utilize the combination of miniature enhancement unit array and periodical stereo microstructure array, simple and convenient, the narrow-band filtering that may be implemented
The miniaturization of device, it is integrated.It can be combined simultaneously with the technique of traditional ripe narrow band filter, directly in the mating processing of CMOS
Solid-state stereo microstructure is carried out in chip die and prepared by miniature enhancement unit array, manufacturing process is simple and convenient, so as to
Match with prior art, reduces manufacturing cost.
The specific application example that the above is only the present invention, is not limited in any way protection scope of the present invention.All uses
Equivalent transformation or equivalent replacement and the technical solution formed, all fall within rights protection scope of the present invention.
Claims (10)
1. a kind of enhanced narrow band filter, it is characterised in that：The enhanced narrow band filter includes setting successively from top to bottom
Miniature enhancement unit array, periodical stereo microstructure array and the mating processing chips of CMOS set；It is described periodically three-dimensional
Micro structure array is integrated in the mating processing chips of the CMOS.
2. enhanced narrow band filter according to claim 1, it is characterised in that：The miniature enhancement unit array effect
To enhance the signal of incident electromagnetic wave, the miniature enhancement unit array is periodic arrangement, and micro- with the periodically solid
Array of structures is provided with wave transparent dielectric layer between being in direct contact or both.
3. enhanced narrow band filter according to claim 1, it is characterised in that：Increase in the miniature enhancement unit array
Unit plan view shape includes but not limited to by force：Membrane structure, circle, quadrangle and hexagon.
4. enhanced narrow band filter according to claim 1, it is characterised in that：The periodicity stereo microstructure array
Pixel array including multiple periodic arrangements, each pixel array include the pixel unit of multiple periodic arrangements, each picture
First unit includes the pixel of multiple periodic arrangements, the pixel geometric parameter having the same in same pixel unit, described several
What parameter includes but not limited to length/radius and vertical/horizontal cross sectional shape.
5. enhanced narrow band filter according to claim 4, it is characterised in that：In the miniature enhancement unit array
The size of miniature enhancement unit can be adjusted according to the pixel dimension, and multiple pixels are individually arrived in covering.
6. enhanced narrow band filter according to claim 4, which is characterized in that the periodicity stereo microstructure array
It is made of a kind of material, for filtering incident electromagnetic wave specific wavelength information.
7. enhanced narrow band filter according to claim 6, which is characterized in that the mating processing chips of CMOS are used for
It receives the electromagnetic wave information from the periodical stereo microstructure array transmission and is converted into corresponding electric signal, and to the electricity
Signal is handled, and the processing includes but not limited to：Signal behavior, signal enhancing, signal storage.
8. enhanced narrow band filter according to claim 4, which is characterized in that the periodicity stereo microstructure array
It being made of multiple material, the periodicity stereo microstructure array includes filter element array and electromagnetic wave converting unit array,
The electromagnetic wave converting unit array is located at below the filter element array；The filter element array is for filtering into radio
Magnetic wave specific wavelength information, the electromagnetic wave converting unit array are used to absorb the electromagnetic wave from the filter element array transmission
Information is simultaneously converted into corresponding electric signal.
9. enhanced narrow band filter according to claim 8, which is characterized in that the mating processing chips of CMOS are used for
The electric signal is handled, the processing includes but not limited to：Signal behavior, signal enhancing, signal storage.
10. a kind of manufacturing method of enhanced narrow band filter as described in any one of claims 1-9, which is characterized in that
Include the following steps：
（1）Prepare the mating processing chip semi-finished product wafers of CMOS of not any structure including filter structure and superposition thereon；
（2）Fine structure material layer, the fine structure material layer are prepared in the mating processing chip semi-finished product crystal column surfaces of the CMOS
Including but not limited to semiconductor material layer, the preparation method include but not limited to：It is bonded, the method for extension；
（3）Micro Process is carried out to the fine structure material layer, including but not limited to：Chemical wet etching method；It is formed periodically three-dimensional
Micro structure array, including but not limited to hemispherical preparation process include but not limited to：Fine structure material layer transfer method and photoetching are carved
Erosion method；
（4）Directly prepared on the periodical stereo microstructure array be packaged after miniature enhancement unit array, cut and
Test；It is described to prepare miniature enhancement unit array approach and include but not limited to：Plasticity electromagnetic wave transparent material transfer method and micro Process at
Type method.
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| CN201810847910.1A CN108712622A (en) | 2018-07-27 | 2018-07-27 | A kind of enhanced narrow band filter and its manufacturing method |
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| CN201810847910.1A CN108712622A (en) | 2018-07-27 | 2018-07-27 | A kind of enhanced narrow band filter and its manufacturing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110166698A (en) * | 2019-06-28 | 2019-08-23 | Oppo广东移动通信有限公司 | Focusing method, complementary metal oxide image sensor, terminal and storage medium |
| CN110620861A (en) * | 2019-09-24 | 2019-12-27 | Oppo广东移动通信有限公司 | Image sensor, camera module and terminal |
| WO2021134450A1 (en) * | 2019-12-31 | 2021-07-08 | 华为技术有限公司 | Image sensor and preparation method therefor, and electronic device |
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| CN107078145A (en) * | 2014-11-18 | 2017-08-18 | 王士原 | Strengthen the light-sensitive device absorbed through micro-structural |
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| US20150002843A1 (en) * | 2013-06-28 | 2015-01-01 | Sony Corporation | Image capture device and electronic apparatus |
| CN107078145A (en) * | 2014-11-18 | 2017-08-18 | 王士原 | Strengthen the light-sensitive device absorbed through micro-structural |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110166698A (en) * | 2019-06-28 | 2019-08-23 | Oppo广东移动通信有限公司 | Focusing method, complementary metal oxide image sensor, terminal and storage medium |
| CN110620861A (en) * | 2019-09-24 | 2019-12-27 | Oppo广东移动通信有限公司 | Image sensor, camera module and terminal |
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Inventor after: Cao Ji Inventor after: Fawaz Haber Inventor after: Sun Yinghao Inventor after: Liu Gang Inventor after: Xu Jinlong Inventor after: Liu Wenpeng Inventor after: Hu Youde Inventor before: Cao Ji Inventor before: Fawaz Haber Inventor before: Sun Yinghao Inventor before: Liu Gang Inventor before: Xu Jinlong Inventor before: Liu Wenpeng Inventor before: Hu Youde |