CN108698947B - 具有掺杂有导电元素的环境屏障层的涡轮环区段 - Google Patents
具有掺杂有导电元素的环境屏障层的涡轮环区段 Download PDFInfo
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Abstract
本发明涉及由陶瓷基质复合物材料制成的涡轮护罩区段(10),其具有形成有内表面和外表面的环状底座(12),所述内表面用于限定在护罩区段安装到环支撑结构(3)上时涡轮环(1)的内表面,所述外表面上延伸有用于将护罩区段连接到环支撑结构(3)的连接部分(14、16),护罩区段(10)还包括区段间的面(20),其在护罩区段(10)安装到环支撑结构(3)上时用于面对相邻的护罩区段。区段间的面(20)涂敷有掺杂有导电化合物并且具有至少一个个槽(24)的环境屏障层(22)。发明还涉及涡轮护罩区段、和包含该护罩区段的涡轮发动机、以及用于制造该护罩区段的方法。
Description
发明背景
本发明涉及由陶瓷基质复合物材料制成的涡轮环区段,特别用于涡轮发动机的涡轮环组件,以及制造该环区段的方法。
对于完全由金属制成的涡轮环组件,必须冷却组件的所有元件,特别是冷却涡流环,上述涡轮环经受最热的流。这种冷却对发动机的性能具有显著影响,因为用于冷却的流是通过发动机从主流中获得的。而且,将金属用于涡轮机环限制了涡轮机内温度升高的潜力,即使这有助于改进航空发动机的性能。
在试图解决这些问题时,已经设想用陶瓷基质复合物(CMC)材料制造涡轮环区段,以避免使用金属材料。
CMC材料具有良好的机械性能,使其适用于构成结构元件,并且有利地是它们在高温下会保持这些性能。使用CMC材料有利地使得减少在操作中需要输送的冷却流,由此改进涡轮发动机性能成为可能。而且,CMC材料的使用有利地帮助减轻涡轮发动机的重量并减少热的时候膨胀的影响(金属部件所遇到的情况)。
在航空涡轮发动机的运行条件(其特征是高温和腐蚀性环境)下,CMC材料可能会退化。为了保护曝露于通过涡轮的腐蚀性热空气流的环区段一些部分,已知用环境屏障层(或环境屏障“涂层”(EBC))涂覆这些部分。例如,已知Si/莫来石/BSAS型的多层环境屏障层(其中,BSAS是硅铝酸钡锶),或实际上包括硅粘结层和稀土硅酸盐层(例如,Y2Si2O7)的那些。以已知的方式,环境屏障层可以通过热喷涂法、物理气相沉积(PVD)法、或沉积浆料(例如,通过浸涂或通过喷涂)来沉积。
在各环区段中,区段之间的面(“区段间”面)通常包括接收密封舌的槽,用于防止气体泄漏到用于使气流通过涡轮的流动通道的外部。这些构成了被称为“百叶窗(blind)”形状的槽可以通过传统的加工方法形成。
然而,希望简化在环区段的区段间的面中形成槽。
发明目的和概述
为此,在第一方面,本发明提供了由陶瓷基质复合物材料制成的涡轮环区段,其具有形成有内表面和外表面的环状底座的部分,所述内表面用于限定在环区段安装到环支撑结构上时涡轮环的内表面,从所述外表面延伸出用于将环区段连接到环支撑结构的连接部分,环区段还包括区段间的面,其在环区段安装到环支撑结构上时用于面对相邻的环区段。根据本发明,区段间的面用掺杂有导电化合物的环境屏障层(22)进行涂敷,并且环境屏障层(22)具有至少一个槽。
术语“掺杂有导电化合物的环境屏障层”用于表示环境屏障层包含至少一层掺杂有导电化合物的层,并且在该层中导电元素的含量足以使得所述层呈导电性,同时又非常小,以避免显着影响环境屏障层的性能。在某些示例中,掺杂的层可以构成环境屏障层的外层。在变体中,掺杂的层可作为一层或多层导电层涂敷,即,具有导电材料的层,例如含有硅的层。
用导电化合物掺杂环境屏障层赋予屏障层导电性质,由此使得能够通过放电加工的方法加工环境屏障层来形成槽,由此与传统的加工方法相比,槽的形成简单得多。
槽可以延伸通过环境屏障层的整个厚度,或者在一种变体中,其可以仅延伸通过环境屏障层厚度的一部分。在示例中,槽可以单独延伸通过环境屏障层的厚度,但是不会延伸到下面的CMC材料中。槽还可以在粘结层中延伸,任选地与环区段的陶瓷基质复合物材料接触,或者延伸到环区段的CMC材料中。在一实施方式中,槽在形状上可以是百叶窗形,即,其不是贯穿槽。
在一实施方式中,导电化合物可以是硅。在一实施方式中,导电化合物可以是导电碳化合物,例如碳或导电碳聚合物。在一实施方式中,导电化合物可以是金属化合物。在一实施方式中,导电化合物可以是碳化硅(SiC)。
在一实施方式中,环境屏障层还可以包含至少一种稀土硅酸盐。示例性的稀土硅酸盐可以是Y2Si2O7。
在该情况下,环境屏障层可以包括:包含掺杂有导电化合物的稀土硅酸盐的第一层;以及第二粘结层,例如,硅制成的第二粘结层,其位于第一层和环区段的陶瓷基质复合物材料之间。第二粘结层特别用于连接第一层并使得能够保护下方的CMC材料免于氧化。通常,可以选择导电化合物,使其与形成掺杂的层的主要材料相容。因此,有利的是在环境屏障层包含掺杂有稀土硅酸盐的层时使用硅,因为硅能够氧化为SiO2,其与所述层的材料相容。
通常,无论所考虑的实施方案如何,环境屏障层中所述导电化合物所存在的层中,导电化合物的重量含量可以小于或等于35%,例如其范围为5%至35%。
在一实施方式中,环境屏障层包含至少一层掺杂的稀土硅酸盐的层,其硅的重量含量小于或等于35%,例如其范围为5%至35%。在一实施方式中,环境屏障层包含至少一层掺杂的稀土硅酸盐的层,其导电碳化合物的重量含量小于或等于35%,例如其范围为5%至35%。在一实施方式中,环境屏障层包含至少一层掺杂的稀土硅酸盐的层,其金属化合物的重量含量小于或等于35%,例如其范围为5%至35%。在一实施方式中,环境屏障层包含至少一层掺杂的稀土硅酸盐的层,其碳化硅(SiC)的重量含量小于或等于35%,例如其范围为5%至35%。
在一实施方式中,环境屏障层包含至少一层掺杂硅铝酸钡锶(BSAS)的层,其硅的重量含量小于或等于35%,例如其范围为5%至35%。在一实施方式中,环境屏障层包含至少一层掺杂的硅铝酸钡锶的层,其导电碳化合物的重量含量小于或等于35%,例如其范围为5%至35%。在一实施方式中,环境屏障层包含至少一层掺杂的硅铝酸钡锶的层,其金属化合物的重量含量小于或等于35%,例如其范围为5%至35%。在一实施方式中,环境屏障层包含至少一层掺杂的硅铝酸钡锶(BSAS)的层,其碳化硅(SiC)的重量含量小于或等于35%,例如其范围为5%至35%。
本发明还提供涡轮环组件,其包括:环支架结构和多个形成涡轮环的环区段,各环区段安装在环支撑结构上,并且其是如上限定的,至少一个密封舌存在于各环区段环境屏障层中的槽中。
包含如上所述涡轮环组件的涡轮发动机也构成本发明的主题。
在第二方面中,本发明提供了制造如上所述环区段的方法,所述方法至少包括以下步骤:
·在环区段的区段间的面上形成掺杂有导电化合物的环境屏障层;以及
·使用放电加工在以此方式形成的环境屏障层中形成至少一个槽。
附图说明
本发明的其它特点和优势通过下文关于本发明具体实施方式的描述并参照附图进行显示,所述具体实施方式以非限制示例的形式给出,附图中:
·图1显示出安装在环支撑结构上的涡轮环区段;
·图2至5是涡轮环区段的区段间的面的截面图,显示出在本发明各种实施方式中的各个槽;并且
·图6是流程图,显示了在本发明实施方式中的制造涡轮环区段的方法的各种步骤。
发明详述
图1显示出高压涡轮环组件,其包括由陶瓷基质复合物(CMC)材料制成的涡轮环1以及金属环支撑结构3。涡轮环1围绕一组旋转叶片(未显示)。涡轮环1由多个环区段10组成,图1仅显示了安装在环支撑结构3上的一个环区段。在所示示例中,在轴向截面中,各环形区段10呈现出字母π形状的截面。在整个说明书中,轴向方向和径向方向(箭头DA和箭头DR)相对于涡轮环的轴线进行限定,该轴线也对应于发动机的纵向轴线。
各环区段10具有环形底座12,其具有相对于径向方向DR的内表面和相对于径向方向DR的外表面。各环区段10具有基本上为倒置字母π形状的截面,其具有环形底座12,环形底座12的内表面涂敷有可磨损材料的层13并限定了通过涡轮的气流的流动通道。上游和下游突起14和16从环形底座12的外表面沿径向方向DR延伸。本文使用的术语“上游”和“下游”是相对于通过涡轮的气流的流动方向(箭头F)。
在该示例中,环支撑结构3固定到涡轮壳30,并且具有上游环形径向凸缘32和下游环形径向凸缘34。各环区段10的突起14和16夹在环支撑结构3的上游和下游凸缘32和34上。在所示示例中,栓18插入在各环区段的突起14和16中所形成的孔中,并且它们用于将各环区段10紧固到环支撑结构3。为此目的,孔(并未显示在附图中)可以存在于环支撑结构的凸缘32和34中,以容纳栓18。
各环区段10具有两个区段间的面20,其位置面向相邻环区段10的区段间的面20。各区段间的面20位于由径向方向DR和轴向方向DA限定的平面中。为了保护环区段20的CMC材料免受高温和通道中的腐蚀气体的影响,各区段间的面20用环境屏障层22进行涂敷。环境屏障层22设置有用来接收密封舌25的槽24或沟槽,在所有环区段10组装在一起以形成涡轮环1时其用于防止来自气流流动通道的气体在环区段10之间逃逸。槽24的形状是百叶窗形的,即,其不是贯穿槽。
图2是径向平面上的截面图,显示了环区段10的区段间的面20,并且更精确地显示了槽24的附近。在该示例中,环境屏障层22由掺杂有导电化合物的第一层40和第二粘结层42构成。粘结层42直接与环区段10的两个区段间的面20接触,并且还与第一层40接触。在该示例中,第一层40是环境屏障层22的外层,即,其并未被另一材料层覆盖。在该示例中,仅在第一层40中制造槽24,即,槽24不会延伸到第二粘结层42中,也不会延伸到下面的CMC材料10中。
第一层40可以以重量计主要包含稀土硅酸盐RE2Si2O7,其中RE表示稀土元素,例如Y2Si2O7。在一个变体中,第一层40可以以重量计主要包含硅铝酸钡锶(BSAS)。例如,第二粘结层42可以由硅制成。第一层40掺杂有导电化合物。例如,该导电化合物可以是硅、碳化硅、碳、导电含碳聚合物、或实际上是金属化合物。由于环境屏障层22的第一层40的导电性能,槽24可以通过在第一层40中的放电加工制成。
在图3的示例中,环区段10涂覆有环境屏障层122,如上所述,所述环境屏障层122包括:掺杂有导电化合物的第一层140;以及第二粘结层142,其位于第一层140和环区段10的CMC材料之间。区段间的面20也具有可以由放电加工制成的槽124。不同于图2的示例,槽124正好穿过环境屏障层122,即穿过第一和第二层140和142,并且其终止于环区段10的CMC材料中。
在图4的示例中,环区段10涂覆有环境屏障层222,所述环境屏障层222包括:掺杂有导电化合物的第一层240;第二粘结层242,其直接与环区段10的界面间的面20的CMC材料接触;以及第三层244,其直接与第二粘结层242和第一层240接触。第三层244可以包含通常用于环境屏障层的材料,例如,用于第一层240的稀土硅酸盐或硅铝酸钡锶(BSAS),不同之处在于其不必掺杂有导电化合物。可以通过放电加工制成的槽224也存在于第一层240内,在该示例中,其是环境屏障层222的外层。
在图5的示例中,环区段涂覆有环境屏障层322,所述环境屏障层322包括:掺杂有导电化合物的第一层340;第二粘结层342,其直接与环区段10的CMC材料和第一层340接触;以及第三层346,其与第一层340接触。第三层346(在该示例中,其是环境屏障层322的外层)具有穿过其中的槽324,所述槽324延伸到第一层340中。不同的是,在所示示例中,槽324既没有延伸到第二粘结层342中,也没有延伸槽CMC环区段10中。第三层包含导电化合物,例如硅,以使得槽324能够通过环境屏障层322中的放电加工制成。
参见图6的流程,下面描述了根据本发明用CMC材料制造环区段10的方法,并且包括以环境屏障层22、122、222、322涂敷的区段间的面20。
在第一步骤E1中,可以在各区段间的面20上形成环境屏障层22、122、222、322。为此,可以通过在CMC材料上直接沉积粘结层42、142、242、342开始。例如,粘结层42、142、242、342可以常规方式通过热喷涂、液体技术(例如通过喷涂或浸涂)、或物理气相沉积来沉积。如上所述,粘结层可以是基于硅的。
随后,掺杂有导电化合物的层40、140、340可以直接沉积在粘结层42、142、342上。该层40、140、340可以同样通过热喷涂包含所述层的主要化合物与导电掺杂化合物的粉末混合物进行沉积。在一个变体中,还可以通过使用浆料中的粉末混合物的液体技术(例如通过喷涂或浸涂),或实际上通过物理气相沉积来沉积。如上所述,层40、140、340的主要化合物可以是稀土硅酸盐或硅铝酸钡锶(BSAS),并且,掺杂的导电化合物物可以是硅或碳。
为了获得如图4所示类型的环境屏障层,可以在沉积掺杂有导电化合物的层240之前,以与层40、140、340相同的方式沉积不包含导电化合物的层244。
为了获得如图5所示类型的环境屏障层,可以在沉积掺杂有导电化合物的层340之后,将基于导电元素(例如硅)的层346进行沉积,例如通过热喷涂、使用液体技术、或物理气相沉积来进行。
最终,在最后的步骤E2中,可以通过放电加工形成或完成形成槽24、124、224、324。为此,可以已知的方式将区段间的面20浸渍在合适的液体中并将环境屏障层22、122、222和322连接到电压发电机的一个端子。然后,连接到同一发电机的另一个端子的电极可以在浸没的环境屏障层的表面上移动,并且环境屏障层可以通过由发电机输送的电压脉冲进行加工,从而形成槽24、124、224、324。
由于在环境屏障层中存在作为掺杂剂的导电化合物,本发明使得该最后的步骤E2成为可能。与传统加工方法相比,通过放电加工来形成槽可以获得改进的槽尺寸精度,并且比传统加工方法更容易实施。
Claims (12)
1.由陶瓷基质复合物材料制成的涡轮环区段,其具有形成有内表面和外表面的环状底座,所述内表面用于限定当所述环区段安装到环支撑结构上时涡轮环的内表面,从所述外表面延伸出用于将环区段接到环支撑结构的连接部分,环区段还包括区段间的面,其在环区段安装到环支撑结构上时用于面对相邻的环区段;其中,区段间的面以环境屏障层涂覆,所述环境屏障层掺杂有导电化合物并且具有至少一个槽,其中,所述槽仅延伸通过环境屏障层厚度的一部分。
2.如权利要求1所述的环区段,其特征在于,所述槽是百叶窗形状的。
3.如权利要求1所述的环区段,其特征在于,所述导电化合物是硅。
4.如权利要求1所述的环区段,其特征在于,所述导电化合物是导电碳化合物。
5.如权利要求1所述的环区段,其特征在于,所述导电化合物是金属化合物。
6.如权利要求1所述的环区段,其特征在于,所述导电化合物是碳化硅。
7.如权利要求1所述的环区段,其特征在于,所述环境屏障层还包含至少一种稀土硅酸盐。
8.如权利要求7所述的环区段,其特征在于,所述环境屏障层包括:包含掺杂有导电化合物的稀土硅酸盐的第一层;以及第二粘结层,其位于第一层和环区段的陶瓷基质复合物材料之间。
9.如权利要求1所述的环区段,其特征在于,在所述导电化合物所存在的环境屏障层中,导电化合物的重量含量为5%至35%。
10.涡轮环组件,其包括:环支架结构和多个形成涡轮环的环区段,各环区段安装到环支撑结构上,并且其如权利要求1所述限定的,至少一个密封舌存在于各环区段的环境屏障层中的槽中。
11.一种涡轮发动机,其包括如权利要求10所述的涡轮环组件。
12.制造如权利要求1所述的环区段的方法,所述方法至少包括以下步骤:
·在环区段的区段间的面上形成掺杂有导电化合物的环境屏障层;以及
·使用放电加工在以此方式形成的环境屏障层中形成至少一个槽。
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PCT/FR2017/050347 WO2017140985A1 (fr) | 2016-02-18 | 2017-02-16 | Secteur d'anneau de turbine avec barrière environnementale dopée par un élément électriquement conducteur |
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FR3048016B1 (fr) | 2018-03-16 |
FR3048016A1 (fr) | 2017-08-25 |
WO2017140985A1 (fr) | 2017-08-24 |
CN108698947A (zh) | 2018-10-23 |
US10724399B2 (en) | 2020-07-28 |
EP3416930B1 (fr) | 2020-10-14 |
EP3416930A1 (fr) | 2018-12-26 |
US20190040761A1 (en) | 2019-02-07 |
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