CN108696110B - Low-power consumption hysteresis driving device and driving method - Google Patents
Low-power consumption hysteresis driving device and driving method Download PDFInfo
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- CN108696110B CN108696110B CN201810753589.0A CN201810753589A CN108696110B CN 108696110 B CN108696110 B CN 108696110B CN 201810753589 A CN201810753589 A CN 201810753589A CN 108696110 B CN108696110 B CN 108696110B
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
Abstract
The invention discloses a low-power consumption hysteresis driving device and a driving method. The invention has the advantages of simple structure, high reliability and low power consumption.
Description
Technical Field
The invention relates to the technical field of hysteresis control, in particular to a low-power consumption hysteresis driving device and a driving method.
Background
In engineering applications, it is desirable in some cases for the semiconductor switch driving circuit to have a specific hysteresis range for improving the anti-interference capability of the driving circuit.
The common solution is to use a comparator circuit, but the comparator circuit is complex and consumes much power, and requires a special power supply circuit, thus not being suitable for low power applications.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a low-power consumption hysteresis driving device and a driving method.
In order to achieve the above purpose, the present invention proposes the following technical scheme: the low-power consumption hysteresis driving device comprises a circuit switch, a first driving circuit and a second driving circuit, wherein the second driving circuit comprises a driving switch,
the first driving circuit is connected with the circuit switch and is used for driving the circuit switch to be turned on when the second driving circuit is turned off and turned off when the second driving circuit is turned on;
the driving switch is connected with the circuit switch and the first driving circuit and is used for correspondingly controlling the second driving circuit to be turned on or off when the driving switch is turned on or off, and controlling the first driving circuit to be turned off when the driving switch is turned on;
the second driving circuit is also connected with the circuit switch and is used for being conducted when the driving switch is conducted, continuously driving and maintaining the conducting state of the circuit switch, and when the input external driving voltage/current is reduced and the output driving voltage/current is reduced to be lower than the threshold value of the circuit switch, the driving circuit switch is turned off; and
The driving capability of the second driving circuit is stronger than that of the first driving circuit.
Preferably, the circuit switch is an NPN triode or an NMOS field effect transistor.
Preferably, when the circuit switch is an NPN triode, the base electrode of the circuit switch is connected with the first driving circuit and the second driving circuit, the collector electrode of the circuit switch is connected with a load, and the emitter electrode of the circuit switch is connected with a power supply of the circuit.
Preferably, the driving switch comprises a second diode and a semiconductor switch which are connected in series, wherein the cathode of the second diode is connected with the circuit switch, and the anode of the second diode is connected with the semiconductor switch; the semiconductor switch is connected with the first driving circuit and the circuit switch.
Preferably, the semiconductor switch is a PNP triode or a PMOS field effect transistor.
Preferably, when the semiconductor switch is a PNP triode, the base electrode of the PNP triode is connected to the anode of the second diode, and the collector electrode of the PNP triode is connected to both the first driving circuit and the circuit switch.
Preferably, the first driving circuit comprises a first zener diode and a first diode which are connected in series, wherein the cathode of the first diode is connected with the circuit switch and the driving switch, and the anode of the first diode is connected with the anode of the first zener diode; the cathode of the first zener diode is connected with a driving power supply, and the other end of the driving power supply is grounded.
Preferably, the low-power hysteresis driving device further comprises a capacitor and a first resistor, wherein one end of the capacitor is connected between the cathode of the first zener diode and the driving power supply, and the other end of the capacitor is connected with the ground; one end of the first resistor is connected between the anode of the first zener diode and the circuit switch, and the other end of the first resistor is grounded.
Preferably, the second driving circuit further comprises a second zener diode and a second resistor which are connected in series, wherein the cathode of the second zener diode is connected with the driving power supply, the anode of the second zener diode is connected with the second resistor, and the other end of the second resistor is connected with the driving switch.
Preferably, the voltage stabilizing value of the second zener diode is smaller than the voltage stabilizing value of the first zener diode.
The invention also provides another technical scheme: a low power hysteresis driving method, the method comprising:
s1, a circuit switch is turned off, a driving switch is turned off, and a second driving circuit is turned off under the control of the driving switch;
s2, when the second driving circuit is cut off, the first driving circuit drives the circuit switch until the circuit switch is turned on;
s3, the circuit switch is conducted, the driving switch is correspondingly conducted, the second driving circuit is conducted under the control of the driving switch, the conduction state of the circuit switch is continuously driven and maintained, and meanwhile the first driving circuit is controlled to be turned off;
and S4, the second driving circuit is turned off when the external driving voltage/current input by the second driving circuit is reduced, and the output driving voltage/current is reduced to be lower than the threshold value of the circuit switch.
The beneficial effects of the invention are as follows: according to the invention, a self-locking driving circuit with low power consumption is added on an original semiconductor switch driving circuit, and a certain difference exists between the driving capability of the two driving circuits, so that a certain difference and a certain gap exist between the on voltage and the off voltage of the circuit switch, a hysteresis driving function of the semiconductor switch circuit in a larger range is realized, and the driving voltage hysteresis range of the circuit switch can be flexibly adjusted by changing the driving parameters of the two driving circuits. The invention has the advantages of very simple circuit structure, high reliability and low power consumption.
Drawings
FIG. 1 is a schematic diagram of a circuit configuration of a low power hysteresis driving device according to the present invention;
fig. 2 is a schematic diagram of a driving method of the low-power hysteresis driving device of the present invention.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.
As shown in fig. 1, the low-power hysteresis driving device disclosed in the embodiment of the invention includes a circuit switch Q1, a first driving circuit 1 and a second driving circuit 2, wherein the first driving circuit 1 and the second driving circuit 2 are connected with the circuit switch Q1, and the first driving circuit 1 and the second driving circuit 2 are respectively connected with the circuit switch Q1 to switch on or off the circuit switch Q1, and the driving capabilities of the two driving circuits 1 and 2 to the circuit switch Q1 are different, so that hysteresis control of the driving circuits can be realized.
Specifically, in this embodiment, the circuit switch Q1 is connected in series with a load and a power supply v_power to form a loop, wherein one end of the load is connected to the positive electrode of the power supply v_power, the other end of the load is connected to the circuit switch Q1, the power supply v_power is the power supply of the main circuit, and the load controls power supply through the circuit switch Q1 of the main circuit. In embodiments, the circuit switch Q1 may be a semiconductor switch, such as an NPN transistor or an NMOS field effect transistor. In this embodiment, the circuit switch Q1 adopts an NPN triode, whose collector is connected to the load, emitter is connected to the negative pole of the power supply v_power and also to ground, and base is connected to the first driving circuit 1 and the second driving circuit 2.
Normally, the circuit switch Q1 is driven by the first driving circuit 1, but such driving circuit cannot realize hysteresis control, so that the anti-interference capability at the on/off critical point of the circuit switch Q1 is poor.
In this embodiment, the first driving circuit 1 specifically includes a first zener diode V1 and a first diode D1 connected in series, where a cathode of the first zener diode V1 is connected to an anode of a driving power v_drive, and a cathode of the driving power v_drive is grounded; the anode of the first zener diode V1 is connected to the anode of the first diode D1, and the cathode of the first diode D1 is connected to the circuit switch Q1, specifically, in this embodiment, the cathode of the first diode D1 is connected to the base of the circuit switch Q1.
In this embodiment, the second driving circuit 2 specifically includes a second zener diode V2, a second resistor R2, and a driving switch 21 connected in series, wherein a cathode of the second zener diode V2 is connected to an anode of the driving power v_drive, an anode of the second zener diode V2 is connected to the second resistor R2, and another end of the second resistor R2 is connected to the driving switch 21.
The drive switch 21 is used to control on or off of the second drive circuit 2 while it is on or off, and to control the first drive circuit 1 to be off while it is on. In this embodiment, the driving switch 21 specifically includes a second diode D2 and a semiconductor switch Q2 connected in series, where a cathode of the second diode D2 is connected to a collector of the circuit switch Q1, and an anode of the second diode D2 is connected to the semiconductor switch Q2; the semiconductor switch Q2 is connected to both the first drive circuit 1 and the circuit switch Q1. In this embodiment, the semiconductor switch Q2 may be a PNP transistor or a PMOS field effect transistor, and in this embodiment, the base of the semiconductor switch Q2 is connected to the anode of the second diode D2, the collector is connected between the cathode of the first diode D1 and the base of the circuit switch Q1, and the emitter is connected to the second resistor R2.
Furthermore, the low-power hysteresis driving device of the present invention further comprises a capacitor C1 and a first resistor R1, wherein one end of the capacitor C1 is connected between the cathode of the first zener diode V1 and the driving power v_drive, and the other end is grounded; one end of the first resistor R1 is connected between the anode of the first zener diode V1 and the circuit switch Q1, and the other end of the first resistor R is grounded.
Preferably, the driving capability of the first driving circuit 1 and the second driving circuit 2 on the circuit switch Q1 are different, specifically, in this embodiment, the voltage stabilizing values of the first zener diode V1 and the second zener diode V2 are different, so that certain differences exist in conduction voltage drops of the first zener diode V1 and the second zener diode V2, so that certain differences also exist in driving capability of the second driving channel (the second driving channel and the first driving channel are two channels distributed up and down in fig. 1) where the first zener diode V1 is located, and therefore certain differences and gaps exist between the on voltage and the off voltage of the circuit switch Q1, so as to realize driving hysteresis control.
In addition, it should be noted that the hysteresis range of the driving voltage of the circuit switch Q1 can be flexibly adjusted by changing the parameters of the first zener diode V1 and the second zener diode V2. The first zener diode V1 and the second zener diode V2 are generally low-power zener diodes having a low on voltage.
The specific working principle of the invention is as follows:
the circuit switch Q1 is opened: in the initial state, assuming that the circuit switch Q1 is in an off state, the cathode of the second diode D2 is in an off state due to the off state of Q1, the semiconductor switch Q2 is not turned on because the base and the emitter of the semiconductor switch Q have no driving current, so that the driving power source v_drive can only drive the circuit switch Q1 through the first driving circuit, and after the driving current/voltage of the circuit switch Q1 reaches a certain value (i.e., an on threshold value), the circuit switch Q1 is turned on, and the Load is powered on. In this case, since the driving semiconductor switching element is divided into a voltage driving type and a current driving type, the conduction threshold is represented by the driving voltage level for a voltage driving type device such as an NMOS field effect transistor, and the conduction threshold is represented by the driving current or the driving voltage level for a current driving type device such as an NPN transistor.
The circuit switch Q1 conduction maintaining process comprises the following steps: when the circuit switch Q1 is turned on, since the cathode of the second diode D2 is grounded and low voltage, the semiconductor switch Q2 is triggered to be turned on due to the driving current generated by the base and the emitter of the second diode D2, and since the voltage stabilizing value of the second voltage stabilizing tube V2 is smaller than that of the first voltage stabilizing tube V1, the driving voltage of the second driving circuit 2 is greater than that of the first driving circuit 1, once the second driving channel where the second voltage stabilizing tube V2 is located is turned on, the first diode D1 is turned off due to the reverse voltage, and at this time, the first driving circuit 1 loses the driving capability, and the driving power v_drive can only realize the self-locking driving of the circuit switch Q1 through the second driving circuit 2, so that the driving channel of the circuit switch Q1 is automatically switched to the second driving circuit 2 where the second voltage stabilizing tube V2 is located by the first driving circuit 1 where the first voltage stabilizing tube V1 is located, thereby continuously maintaining the on state of the circuit switch Q1.
The circuit switch Q1 is turned off: when the driving voltage/current of the driving power v_drive continuously decreases, the driving voltage/current outputted by the second driving circuit 2 where the second voltage regulator V2 is located decreases to be lower than the threshold value of the circuit switch Q1, and the circuit switch Q1 is turned off.
As shown in FIG. 2, the invention correspondingly discloses a low-power hysteresis driving method, which comprises the following steps:
s1, a circuit switch Q1 is turned off, a driving switch 21 is turned off, and a second driving circuit 2 is turned off under the control of the driving switch 21;
s2, when the second driving circuit 2 is turned off, the first driving circuit 1 drives the circuit switch Q1 until being turned on;
s3, the circuit switch Q1 is conducted, the driving switch 21 is correspondingly conducted, the second driving circuit 2 is conducted under the control of the driving switch 21, the conduction state of the circuit switch Q1 is continuously driven and maintained, and meanwhile the first driving circuit 1 is controlled to be turned off;
s4, the external driving voltage/current input by the second driving circuit 2 is reduced, and the output driving voltage/current is reduced to be lower than the threshold value of the circuit switch Q1, and the circuit switch Q1 is turned off.
The specific flow and principle of implementation of the steps S1 to S4 may refer to corresponding descriptions in the device, and are not repeated here.
While the foregoing has been disclosed in the specification and drawings, it will be apparent to those skilled in the art that various substitutions and modifications may be made without departing from the spirit of the invention, and it is intended that the scope of the invention be limited not by the specific embodiments disclosed, but by the appended claims.
Claims (10)
1. The low-power consumption hysteresis driving device is characterized by comprising a circuit switch, a first driving circuit and a second driving circuit, wherein the second driving circuit comprises a driving switch,
the first driving circuit is connected with the circuit switch and is used for driving the circuit switch to be turned on when the second driving circuit is turned off and turned off when the second driving circuit is turned on;
the driving switch is connected with the circuit switch and the first driving circuit and is used for correspondingly controlling the second driving circuit to be turned on or off when the driving switch is turned on or off, and controlling the first driving circuit to be turned off when the driving switch is turned on;
the second driving circuit is also connected with the circuit switch and is used for being conducted when the driving switch is conducted, continuously driving and maintaining the conducting state of the circuit switch, and when the input external driving voltage/current is reduced and the output driving voltage/current is reduced to be lower than the threshold value of the circuit switch, the driving circuit switch is turned off; and
The driving capability of the second driving circuit is stronger than that of the first driving circuit.
2. The hysteresis driving device according to claim 1, wherein the circuit switch is an NPN triode or an NMOS field effect transistor.
3. The hysteresis driving device according to claim 2, wherein when the circuit switch is an NPN triode, the base electrode is connected to the first driving circuit and the second driving circuit, the collector electrode is connected to a load, and the emitter electrode is connected to a power supply of the circuit.
4. The hysteresis driving device according to claim 1, wherein the driving switch comprises a second diode and a semiconductor switch connected in series, the cathode of the second diode is connected with the circuit switch, and the anode is connected with the semiconductor switch; the semiconductor switch is connected with the first driving circuit and the circuit switch.
5. The hysteretic drive of claim 4, wherein the semiconductor switch is a PNP transistor or a PMOS field effect transistor.
6. The hysteresis driving device according to claim 5, wherein when the semiconductor switch is a PNP transistor, a base electrode thereof is connected to an anode of the second diode, and a collector electrode thereof is connected to both the first driving circuit and the circuit switch.
7. The hysteresis driving device according to claim 1, wherein the first driving circuit comprises a first zener diode and a first diode connected in series, a cathode of the first diode is connected with the circuit switch and the driving switch, and an anode of the first diode is connected with an anode of the first zener diode; the cathode of the first zener diode is connected with a driving power supply, and the other end of the driving power supply is grounded.
8. The hysteresis driving device according to claim 7, wherein the second driving circuit further comprises a second zener diode and a second resistor connected in series, the cathode of the second zener diode is connected to the driving power supply, the anode is connected to the second resistor, and the other end of the second resistor is connected to the driving switch.
9. The hysteresis driving device according to claim 8, wherein the voltage stabilizing value of the second zener diode is smaller than the voltage stabilizing value of the first zener diode.
10. A low power consumption hysteresis driving method based on the low power consumption hysteresis driving device according to claim 1, characterized in that the method comprises:
s1, a circuit switch is turned off, a driving switch is turned off, and a second driving circuit is turned off under the control of the driving switch;
s2, when the second driving circuit is cut off, the first driving circuit drives the circuit switch until the circuit switch is turned on;
s3, the circuit switch is conducted, the driving switch is correspondingly conducted, the second driving circuit is conducted under the control of the driving switch, the conduction state of the circuit switch is continuously driven and maintained, and meanwhile the first driving circuit is controlled to be turned off;
and S4, the second driving circuit is turned off when the external driving voltage/current input by the second driving circuit is reduced, and the output driving voltage/current is reduced to be lower than the threshold value of the circuit switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810753589.0A CN108696110B (en) | 2018-07-10 | 2018-07-10 | Low-power consumption hysteresis driving device and driving method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810753589.0A CN108696110B (en) | 2018-07-10 | 2018-07-10 | Low-power consumption hysteresis driving device and driving method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108696110A CN108696110A (en) | 2018-10-23 |
| CN108696110B true CN108696110B (en) | 2024-02-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810753589.0A Active CN108696110B (en) | 2018-07-10 | 2018-07-10 | Low-power consumption hysteresis driving device and driving method |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3469114A (en) * | 1965-11-19 | 1969-09-23 | Westinghouse Electric Corp | Electronic switch and control circuit therefor |
| JPH01264561A (en) * | 1988-04-15 | 1989-10-20 | Hitachi Ltd | Booster circuit |
| JPH1022803A (en) * | 1996-07-03 | 1998-01-23 | Denso Corp | Drive circuit and current direction switching circuit for n-channel mosfet |
| CN102223749A (en) * | 2011-06-20 | 2011-10-19 | 浙江工业大学 | Inserted type multifunctional light emitting diode (LED) drive circuit |
| CN203775016U (en) * | 2014-03-21 | 2014-08-13 | 北京经纬恒润科技有限公司 | Self-locking high-end driving circuit |
| KR20150050122A (en) * | 2013-10-31 | 2015-05-08 | 삼성전기주식회사 | Light emitting diode driving apparatus |
| WO2016045559A1 (en) * | 2014-09-22 | 2016-03-31 | 邦彦技术股份有限公司 | Power supply system supporting redundancy backup and hot plugging |
| CN106686827A (en) * | 2017-02-10 | 2017-05-17 | 深圳创维照明电器有限公司 | LED lamp and wide-voltage input driving circuit thereof |
| CN107482585A (en) * | 2017-10-02 | 2017-12-15 | 佛山中锦微电科技有限公司 | Cold end overcurrent protective drive circuit and motor-drive circuit based on pulsed drive |
| CN107919792A (en) * | 2017-11-23 | 2018-04-17 | 杰华特微电子（杭州）有限公司 | A kind of transistor drive circuit, driving method and Switching Power Supply |
| CN208285214U (en) * | 2018-07-10 | 2018-12-25 | 魏德米勒电联接（上海）有限公司 | A kind of stagnant ring driving device of low-power consumption |
-
2018
- 2018-07-10 CN CN201810753589.0A patent/CN108696110B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3469114A (en) * | 1965-11-19 | 1969-09-23 | Westinghouse Electric Corp | Electronic switch and control circuit therefor |
| JPH01264561A (en) * | 1988-04-15 | 1989-10-20 | Hitachi Ltd | Booster circuit |
| JPH1022803A (en) * | 1996-07-03 | 1998-01-23 | Denso Corp | Drive circuit and current direction switching circuit for n-channel mosfet |
| CN102223749A (en) * | 2011-06-20 | 2011-10-19 | 浙江工业大学 | Inserted type multifunctional light emitting diode (LED) drive circuit |
| KR20150050122A (en) * | 2013-10-31 | 2015-05-08 | 삼성전기주식회사 | Light emitting diode driving apparatus |
| CN203775016U (en) * | 2014-03-21 | 2014-08-13 | 北京经纬恒润科技有限公司 | Self-locking high-end driving circuit |
| WO2016045559A1 (en) * | 2014-09-22 | 2016-03-31 | 邦彦技术股份有限公司 | Power supply system supporting redundancy backup and hot plugging |
| CN106686827A (en) * | 2017-02-10 | 2017-05-17 | 深圳创维照明电器有限公司 | LED lamp and wide-voltage input driving circuit thereof |
| CN107482585A (en) * | 2017-10-02 | 2017-12-15 | 佛山中锦微电科技有限公司 | Cold end overcurrent protective drive circuit and motor-drive circuit based on pulsed drive |
| CN107919792A (en) * | 2017-11-23 | 2018-04-17 | 杰华特微电子（杭州）有限公司 | A kind of transistor drive circuit, driving method and Switching Power Supply |
| CN208285214U (en) * | 2018-07-10 | 2018-12-25 | 魏德米勒电联接（上海）有限公司 | A kind of stagnant ring driving device of low-power consumption |
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| Publication number | Publication date |
|---|---|
| CN108696110A (en) | 2018-10-23 |
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