CN108695334A - The marginal texture and its manufacturing method of sandwich type element - Google Patents
The marginal texture and its manufacturing method of sandwich type element Download PDFInfo
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- CN108695334A CN108695334A CN201710236018.5A CN201710236018A CN108695334A CN 108695334 A CN108695334 A CN 108695334A CN 201710236018 A CN201710236018 A CN 201710236018A CN 108695334 A CN108695334 A CN 108695334A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
Abstract
The invention discloses a kind of marginal texture of sandwich type element and its manufacturing methods, and wherein sandwich type element includes the multilevel-cell layer of lamination.This marginal texture includes first and second hierarchic structure.First hierarchic structure is located at the palpiform of sandwich type element into the first direction of contact hole, the first edge portion of first direction including each unit layer, the boundary of these first edge portions with level increase and gradually inside contract, wherein by lowest element layer first edge portion boundary to highest elementary layer first edge portion boundary the elevation angle be first angle.Second hierarchic structure includes the second edge portion of the second direction of each unit layer, the boundary position in these second edge portions is irregular with the raised variation of level, and by the elevation angle on the boundary in the second edge portion on the boundary in the second edge portion of lowest element layer to highest elementary layer be second angle, be more than above-mentioned first angle.
Description
Technical field
It is more in particular to one kind the invention relates to a kind of structure and its manufacturing method suitable for integrated circuit
The marginal texture and its manufacturing method of layer elements.
Background technology
Sandwich type element structure, such as the conducting wire of each layer elements of three-dimensional (3D) element arrays (such as 3D memories) all need electricity
Property connection, so in its contact zone each layer conductive layer all need expose for be electrically connected, to form stair-stepping engagement pad knot
Structure.
In the prior art, above-mentioned hierarchic structure is the multiple mask layers for being formed by priority and being reduced gradually, Yi Jiqi
Between multiple floor etch step alternately and multiple mask layer reduction step and be formed in sandwich type element area surrounding.Fig. 1 is painted
Show in the example using 6 mask layers, the size and location in first to the 6th mask layer 10-1~10-6 and sandwich type element area 100
Relationship.As shown in Figure 1, the size of the first mask layer 10-1 to the 6th mask layer 10-6 in x-direction and y-direction all with same
Difference is sequentially gradually small so that the width W of Y-direction hierarchic structureYEqual to the width W of X-direction hierarchic structureX。
However, since the pattern of contact hole and the first metal layer is only located on the direction stepped region X (or Y), therefore the sides Y (or X)
It is wasted to the area of stepped region.
Invention content
The present invention provides a kind of marginal texture of sandwich type element, and the area for not forming the stepped region in the direction of contact hole can
To be reduced to very little, and the waste of chip area can be reduced.
The present invention simultaneously provides a kind of manufacturing method of the marginal texture of sandwich type element, may be utilized in fabricating the multilayer of the present invention
The marginal texture of element region.
In the marginal texture of the sandwich type element of the present invention, sandwich type element includes the multilevel-cell layer of lamination.This marginal texture
Including first and second hierarchic structure.First hierarchic structure is located at the palpiform of sandwich type element into the first direction of contact hole, including
The boundary of the first edge portion of the first direction of each unit layer, these first edge portions increases with level and gradually inside contracts, wherein
By lowest element layer first edge portion boundary to highest elementary layer first edge portion boundary the elevation angle be first angle.
Second hierarchic structure includes the second edge portion of the second direction of each unit layer, and the boundary position in these second edge portions is with level
Raised variation is irregular, and the side in the second edge portion by the boundary in the second edge portion of lowest element layer to highest elementary layer
The elevation angle on boundary is second angle, is more than first angle.
In one embodiment, first angle is between 6 ° and 12 °, and second angle is between 20 ° and 60 °.
In one embodiment, the first direction is X-direction and the second direction is Y-direction or the first party
To being X-direction for Y-direction and the second direction.
In one embodiment, each elementary layer includes first material layer and second material layer, and this in these elementary layers
A little first material layers and these second material layer alternative stackeds.Possible first material layer includes silicon nitride layer and second material layer packet
It includes silicon oxide layer or first material layer includes conductor layer and second material layer includes insulating layer.
A kind of manufacturing method of the marginal texture of sandwich type element, including:Form the lamination for including multilevel-cell layer;Repeatedly cover
Mold layer forming step, respectively in forming a mask layer on the lamination;And after the formation of each mask layer, alternately
Multiple etching step and at least once mask layer reduction step, wherein etch step removes what the mask layer was exposed each time
One layer unit layer.Wherein, in the sandwich type element by any mask layer without reduction on the first direction for forming contact hole
Boundary inside contracted than the boundary of previous mask layer cut down through last time, any mask layer without reduction in a second direction
Boundary at least exceed the boundary of the previous mask layer cut down through last time, and the mask layer formed at first in a second direction
Boundary and the distance between sandwich type element be less than the mask layer formed at first in a first direction boundary and sandwich type element it
Between distance.
In one embodiment, the boundary of the second direction of any mask layer without reduction is preset as being aligned without reduction
The boundary of the second direction of previous mask layer.
In one embodiment, each elementary layer includes first and second material layer, and in these elementary layers these first
Material layer and these second material layer alternative stackeds.Second material layer is located at the feelings on first material layer in each elementary layer
Under condition, remove the method for the layer unit layer exposed for example including:The one layer of second material layer exposed is removed, with lower section
One layer of adjacent first material layer is etching suspension layer;And remove previously as one layer of first material layer for etching suspension layer,
It is etching suspension layer with one layer of adjacent second material layer of lower section.
The present invention sandwich type element marginal texture in, due to second direction the second hierarchic structure oblique angle be more than it is upper
The oblique angle of first hierarchic structure of the square first direction that will form contact hole, therefore the narrower width of the stepped region of second direction, and
It is reduced the waste of chip area.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and coordinate institute's accompanying drawings
It is described in detail below.
Description of the drawings
Fig. 1 is painted the top view of the mask design of the marginal texture of prior art formation sandwich type element.
Fig. 2 is painted the upper of the mask design used in the manufacturing method of the marginal texture of the sandwich type element of one embodiment of the invention
View.
Fig. 3 is painted the sectional view of the X-direction hierarchic structure in the marginal texture of the sandwich type element of one embodiment of the invention, this
Region where hierarchic structure is the region for the contact hole that will form sandwich type element.
Fig. 4 A, 4B are painted the sectional view of the Y-direction hierarchic structure of two embodiments of the invention, and wherein Fig. 4 A show each rigid shape
At mask layer Y-direction boundary all completely alignment and each mask layer formed after the etching that carries out or mask reduction step number phase
Result simultaneously.
Fig. 5 is painted with sectional view in the manufacturing method of the marginal texture of the sandwich type element of one embodiment of the invention, and first covers
Etch step after mold layer formation and mask reduction step.
Fig. 6, Fig. 7 are painted the sectional view of the directions the X/Y marginal zone after the second mask layer is newly formed in above-described embodiment.
[Symbol description]
10-1~10-6,20-1~20-6:Mask layer
100:Sandwich type element area
102a,102b:X-direction edge part, the Y-direction edge part of elementary layer
500:Substrate
502:The edge part of silicon oxide layer
502a,502b:X-direction edge part, the Y-direction edge part of silicon oxide layer
504:The edge part of silicon nitride layer
504a,504b:X-direction edge part, the Y-direction edge part of silicon nitride layer
506:Edge part of the silicon oxide layer-silicon nitride layer to (ON to)
506a,506b:ON pairs of X-direction edge part, Y-direction edge part
510,512,512':Mask layer
5102:The X-direction boundary for the mask layer 510 cut down through last time
5104:The Y-direction boundary for the mask layer 510 cut down through last time
600:The stepped profile of finished product
H:The height of hierarchic structure
h1,h1',h1",h2,h2",h6":The height of mask layer
T:The thickness of each elementary layer
θ1,θ2:Angle
WX:The width of X-direction hierarchic structure
WY,W'Y:The width of Y-direction hierarchic structure
w:The width of width or each tread that mask layer is cut in
Specific implementation mode
Below will by embodiment, the invention will be further described, but such embodiment is only to illustrate
With, rather than to limit the scope of the invention.
Fig. 2 is painted the mask design used in the manufacturing method of the marginal texture of the sandwich type element of one embodiment of the invention.Before
It is, for example, 3D memories to state sandwich type element.
Fig. 2 is please referred to, this embodiment successively forms 6 mask layers 20-1,20-2,20-3,20-4,20-5 and 20-6, and
The direction for forming contact hole is X-direction by sandwich type element.Wherein, the mask layer 20-1 formed at first defines X-direction ladder
The boundary of both structure and Y-direction hierarchic structure, the distance between X-direction boundary and sandwich type element area 100 of mask layer 20-1
As by the width W of the X-direction hierarchic structure of formationX, and between the Y-direction boundary of mask layer 20-1 and sandwich type element area 100
Distance be by the width W&apos of the Y-direction hierarchic structure of formation;Y。
Again as shown in Fig. 2, the X-direction boundary of the mask layer formed more afterwards more retreats, used with forming follow-up connection contact hole
Rule, the enough wide hierarchic structure of tread, width WX is as prior art.However, each mask layer 20-1,20-2,20-
3, the Y-direction boundary of 20-4,20-5 and 20-6 are all preset as being aligned, and the distance between sandwich type element area 100 can be preset
To approach the distance between the X-direction boundary of mask layer 20-6 eventually formed and sandwich type element area 100, and it is much smaller than shape at first
At mask layer 20-1 X-direction boundary and the distance between sandwich type element area 100 i.e. WX.So Y-direction ladder knot of gained
The width W&apos of structure;YIt will be substantially less that the width W of X-direction hierarchic structureX。
Although above example forms 6 mask layers, the present invention is not limited thereto, and the number of mask layer can be formed with being intended to
Step number increase and decrease and increase and decrease, can increase and decrease and increase and decrease with the height of each step, and can be with the tread width of each step
Increase and decrease and increases and decreases.In addition, if the width W&apos of Y-direction hierarchic structure;YToo many, the then mask layer (example formed afterwards need not be reduced
Such as 20-5) it is newly formed after Y-direction boundary be not necessarily intended to be preset as the Y-direction with previous mask layer (such as 20-4) after newly formed
Boundary alignment, as long as and the Y-direction boundary more than previous mask layer after the reduction of its last time mask.This point will be in slightly
Diagram is described in detail afterwards.
Fig. 3 is painted the sectional view of the X-direction hierarchic structure in the marginal texture of the sandwich type element of one embodiment of the invention, this
X-direction hierarchic structure can be identical as prior art.This X-direction hierarchic structure includes the edge part 102a of the X-direction of each unit layer,
The boundary of these X-direction edge parts 102a increases with level and gradually inside contracts, wherein by the X-direction edge part of minimum elementary layer
The elevation angle on the boundary of 102a to the boundary of the X-direction edge part 102a of highest elementary layer is θ 1.Each unit layer in the above structure
Thickness can be identical (T), and the tread width of each step can be identical (w).The number of plies N of the multilevel-cell layer is usually 16
More than, for example, 39,60 or 96.
When the number that the number of plies of the multilevel-cell layer is the mask layer that the step number to be formed is N, priority is formed is
M, and the number of the etch step carried out after the i-th mask layer (i=1~M) formation is miWhen (and mi- 1 time mask reduction step is handed over
For progress;mi>=2), existRelationship, wherein the i-th mask layer forms the m carried out afterwardsiSecondary etch step can determine
Justice goes out miA step.In general, the number for the etch step that any act of layer is carried out after being formed is less than or equal to its previous mask layer shape
At the number of rear carried out etch step, also that is, the number for the etch step that the i-th mask layer (i=2~M) carries out after being formed
miThe number m of the etch step carried out after being formed less than or equal to the (i-1)-th mask layeri-1。
On the other hand, Fig. 4 A, 4B are please referred to, in the embodiment that the Y-direction boundary of each mask layer is all preset as alignment,
Top will not form the width W&apos of the Y-direction hierarchic structure of contact hole;YThe W of prior art can be much smaller thanY(=WX).Y-direction ladder
Structure includes the edge part 102b of the Y-direction of each unit layer, the boundary position of these Y-direction edge parts 102b is raised with level
Variation is irregular, and by the Y-direction edge part 102b on the boundary of the Y-direction edge part 102b of lowest element layer to highest elementary layer
Boundary the elevation angle be θ2, boundary to the X side of highest elementary layer of the value more than the X-direction edge part 102a by lowest element layer
To the elevation angle theta on the boundary of edge part 102a1。
The width W of X-direction hierarchic structureXFor the width w of the total N and each tread for the step to be formed product (N ×
W), wherein w is for example between 300nm between 800nm.For example, as N=39 and w=500nm, WXAs 19.5 μm.Another party
Face, when the Y-direction boundary after all mask layers are newly formed is all aligned, the width W&apos of Y-direction hierarchic structure;YFor the ladder defined
The step number m that the most mask layer of number of stages (being usually that formed at first) is definedmax(that is, the mask layer
The number of rear the carried out etch step formed) product (m with the width w of each treadmax×w).For example, working as mmax=8
And when w=500nm, W'YAs 4 μm.
Y-direction boundary after all mask layers are newly formed be all aligned and each mask layer defined in step number it is all identical
When, step number defined in each mask layer is the total N for the step the to be formed divided by number M (m of mask layermax=N/
M), W at this timeX(N × w) and W'YThe ratio of (mmax × w) is the number M of mask layer.The step number defined in each mask layer
When mesh is not all identical, WX/W'Y≠M.In one embodiment, WX/W'YRatio is between 2 to 16.
Also, the height H of X-direction hierarchic structure and Y-direction hierarchic structure is thickness T and the ladder to be formed per layer unit layer
The product (H=T × N) of the total N of grade, wherein T values are for example between 40nm between 80nm.Therefore, θ1For tan-1(H/WX)=
tan-1[(T×N)/(N×w)]=tan-1And θ (T/w),2For tan-1(H/W'Y);The M mask layer described in leading portion is newly formed
Y-direction boundary afterwards is all aligned and each customized step number is all identical, and makes WX/W'YIn the case of=M, θ2It is then tan-1
(M×T/w).In one embodiment, θ1Between 6 ° and 12 °, and θ2Between 20 ° and 60 °.
It is all aligned completely on the Y-direction boundary of each newly formed mask layer, the etching or cover that each mask carries out after being formed
In the case that mould reduction step number is identical, and the width that mask reduction step is cut down every time is also identical, each mask
The rear region gradually etched that layer is formed is all identical, therefore the Y-direction hierarchic structure of gained can be as shown in Figure 4 A, former ranks
Tread width is identical with X-direction hierarchic structure, but the through highest elementary layer of last single order.And in alignment error, each mask layer shape
At the difference of the number of the etching or mask reduction step of rear progress, and the error of the width of mask reduction step reduction every time
Etc. in the presence of factors, it will narrow tread and irregular Y-direction hierarchic structure are generated, as illustrated in Fig. 4 B.
Said units layer generally includes first material layer and second material layer, in the case of this in these elementary layers these
One material layer and these second material layer alternative stackeds.
In one embodiment, there are enough Etch selectivities between the one the second materials, so that any first material layer can
Using the etching suspension layer as second material layer adjacent thereon, and allow any second material layer as thereon adjacent
The etching suspension layer of one material layer.For example, it may be possible to which the first material is silicon nitride, the second material is silica.
Formation and subsequent etch step about above each mask layer and mask reduction step, herein with the first mask layer
And subsequent it is described as follows for etch step and mask reduction step.This explanation is suitable for X-direction marginal zone and Y-direction edge
Both areas, difference are the distance between boundary and the sandwich type element of the first mask layer that do not cut down in X-direction (i.e. WX) big
In the distance between the boundary for the first mask layer that do not cut down in Y-direction and sandwich type element (i.e. W'Y), such as first covered in Fig. 2
The case where mold layer 20-1.
Fig. 5 is painted in the manufacturing method of sandwich type element marginal texture of one embodiment of the invention, what the first mask layer was formed
Etch step afterwards and mask reduction step.Although each elementary layer includes one layer of silicon oxide layer and one layer of nitridation in this embodiment
Silicon layer, however, the present invention is not limited thereto;Two kinds of material layers of each elementary layer also can be other combinations, as long as between both materials
There are enough etching selection ratios.Although the first mask layer is used to define 6 step (m in this embodiment againI=1=6), but
The present invention is also not limited to this.
Fig. 5 is please referred to, (respectively contains edge with N layers of silicon nitride layer (respectively containing edge part 502) containing N+1 layers of silicon oxide layer being formed
Portion 504) alternative stacked structure after, in forming the first photoresist layer 510 (Fig. 5 a) on laminated construction.Each silicon nitride layer with
Adjacent silicon oxide layer is collectively referred to as silicon oxide layer-silicon nitride layer to (ON pairs of abbreviation contains edge part 506) thereon.Without reduction
First photoresist layer 510 exposes a marginal portion of the edge part 502 of top layer's silicon oxide layer, and defines X-direction ladder
The boundary of structure and Y-direction hierarchic structure.Silicon oxide layer (contain edge part 502) thickness for example betweenExtremelyIt
Between.Silicon nitride layer (contain edge part 504) thickness for example between ExtremelyBetween.
Then it is mask with the first photoresist layer 510, the edge part 502 of etching top layer silicon oxide layer, with lower section phase
The edge part 504 of adjacent silicon nitride layer is etching suspension layer (Fig. 5 b), at this time the thickness h 1&apos of the first photoresist layer 510;It can be less than
The h1 of script.With the first photoresist layer 510 it is again later mask, as that layer of silicon nitride layer for etching suspension layer before etching
Edge part 504, with the edge part 502 of the adjacent silicon oxide layer in lower section be etching suspension layer (Fig. 5 c), so i.e. define
First step, at this time the thickness h 1 " of the first photoresist layer 510 can be less than previous h1'.The above priority etches one layer of oxidation
The operation of the edge part 502 of silicon layer and the edge part 504 of one layer of adjacent below silicon nitride layer is considered as an etch step.
Then a mask reduction step is carried out, the width of w is cut down from the first photoresist layer 510, even if also the first photoetching
The boundary of glue-line 510 retreats the distance (Fig. 5 d) of w, the width of this w is the width of a tread.This mask reduction step also can
The thickness for reducing by the first photoresist layer 510 makes its thickness h 2 be less than its previous thickness h 1 ".Then to be cut by aforementioned mask
The first photoresist layer 510 for subtracting step is mask, as above the edge part 506 (Fig. 5 e) of one layer ON pairs of etching, to define
Second step, and make the height of first step, one step of decline of previous definition.The thickness of first photoresist layer 510 at this time
Degree h2 " can be less than previous h2.
Above 2 etch steps and 1 mask reduction step define two steps altogether.Later again alternately 4 (=
mI=1- 2) secondary aforementioned mask reduction step and 4 above-mentioned etch steps, and 4 steps (Fig. 5 f) again are defined, and meanwhile it is previously fixed
The one the second steps of justice can also decline the height of 4 steps, so complete 6 (=mI=1) step definition.At this time
The thickness h 6 " of one photoresist layer 510 has become too thin and is unable to stand mask reduction step again, therefore can not be used for defining more
More step, it is necessary to remove.
Please refer to Fig. 6,7, be subsequently formed the second photoresist layer 512, X-direction marginal zone profile as shown in fig. 6, and
The profile of marginal zone is as shown in Figure 7 in the Y direction.Person to be defined is the X-direction edge part 502a of silicon oxide layer in X-direction marginal zone
And the X-direction edge part 504a of silicon nitride layer, the two are combined into ON couples of X-direction edge part 506a.It is to be defined in Y-direction marginal zone
Person is the Y-direction edge part 502b of silicon oxide layer and the Y-direction edge part 504b of silicon nitride layer, the two are combined into ON pairs of X-direction
Edge part 506b.
As shown in fig. 6, the boundary of the X-direction of the second photoresist layer 512 without reduction than cut down through last time the
The boundary (position is indicated with dotted line 5102) of the X-direction of one photoresist layer 510 (Fig. 5 f) inside contracts, to define next ladder
Grade.
On the other hand, as shown in fig. 7, the Y-direction boundary of the second photoresist layer 512 without reduction can be preset as being aligned
The Y-direction boundary of the first photoresist layer 510 (Fig. 5 b) without reduction.Thus, be formed in the second photoresist layer 512 laggard
The number m of capable etch stepI=2The number m of the etch step carried out after being formed less than or equal to the first photoresist layer 510I=1, and
Each mask reduction step cut down it is of same size in the case of, only have subsequently in Y-direction marginal zone it is shown in fig. 5 previously
The region being etched can be etched.
But, if the width W&apos for the Y-direction hierarchic structure to be formed;YVery little is not needed, then the second light without reduction
As long as the Y-direction boundary of photoresist layer exceeds the Y-direction boundary (position for the first photoresist layer 510 (Fig. 5 f) cut down through last time
Set and indicated with dotted line 5104), as shown in dotted line the case where the second photoresist layer 512 '.
Forming the second photoresist layer 512 or 512 ' after, alternately mI=2Secondary above-mentioned etch step and mI=2On -1 time
Mask reduction step is stated, then successively forms M-2 follow-up photoresist layers, and after wherein the i-th photoresist layer (i=3~M)
Alternately miSecondary above-mentioned etch step and mi- 1 aforementioned mask reduction step, wherein such as the second photoresist layer 512 or
512 ' the case where, the boundary of the i-th photoresist layer without reduction is than the (i-1)-th photoresist through last time reduction in the X direction
The boundary of layer inside contracts, and the boundary of the i-th photoresist layer without reduction at least exceeds the cut down through last time in the Y direction
The boundary of i-1 photoresist layers, you can complete X-direction hierarchic structure and Y-direction hierarchic structure.Due in the X direction without cutting down
The boundary of the i-th photoresist layer inside contracted than the boundary of the (i-1)-th photoresist layer cut down through last time, and in the Y direction without
The boundary for the i-th photoresist layer cut down at least exceeds the boundary for the (i-1)-th photoresist layer cut down through last time, therefore in Y-direction
There is the part being etched to be certainly less than the part for having in X-direction and being etched, makes the width W&apos of Y-direction hierarchic structure;YThe side X must be less than
To the width W of hierarchic structureX。
In the profile of the marginal portion of X-direction hierarchic structure such as Fig. 6 shown in dotted line 600.Each newly formed photoresist layer
Y-direction boundary be all preset as alignment in the case of the profile of Y-direction hierarchic structure can then be illustrated with the dotted line 600 in Fig. 7
Indicate to property.In detail, profile and width W&apos shown in dotted line 600 in Fig. 7;YIt is the Y-direction in each newly formed photoresist layer
Boundary is all perfectly aligned, and the etching or mask reduction step number that each photoresist layer carries out after being formed are identical, and mask is cut every time
Subtract step reduction photoresist layer width it is also identical in the case of, the profile and width of obtained Y-direction hierarchic structure,
And sandwich type element is located at the region of label 100 under this situation.If above projects have any one to have differences, stairstepping is just
Other irregular variations can further be generated.
One example of the above method is as shown in the table, and wherein ON pairs of total number of plies is 39, that is, has 39 steps to determine
Justice.
Above by silicon oxide layer and silicon nitride layer alternative stacked at hierarchic structure is formed after, usable known method
Silicon nitride is replaced, such as polysilicon or tungsten with a conductor material, can so be formed and be handed over by silicon oxide layer and conductor material layer
For lamination at hierarchic structure, for be subsequently formed contact hole connection.
The present invention sandwich type element marginal texture in, due to second direction the second hierarchic structure oblique angle be more than it is upper
The oblique angle of first hierarchic structure of the square first direction that will form contact hole, therefore the narrower width of the stepped region of second direction, and
It is reduced the waste of area.Furthermore when the boundary of the second direction of any mask layer without reduction be preset as alignment without
When the boundary of the second direction for the previous mask layer cut down, the width of the stepped region of second direction can be reduced to minimum.
Although the present invention has been disclosed by way of example above, it is not intended to limit the present invention., any technical field
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when can make some changes and embellishment, thus it is of the invention
Protection domain subject to be defined depending on appended claims range.
Claims (10)
1. a kind of marginal texture of sandwich type element, the sandwich type element includes the multilevel-cell layer of lamination, which includes:
First hierarchic structure is located at the palpiform of the sandwich type element at the of the first direction of contact hole, including these elementary layers
The boundary of the first edge portion in one direction, these first edge portions increases with level and gradually inside contracts, and by lowest element layer
The elevation angle on the boundary of first edge portion to the boundary of the first edge portion of highest elementary layer is first angle;And
Second hierarchic structure includes the second edge portion of the second direction of these elementary layers, the boundary bit in these second edge portions
It sets with the raised variation of level irregularly, and by second side on the boundary in the second edge portion of lowest element layer to highest elementary layer
The elevation angle on the boundary of edge is second angle, and the second angle is more than the first angle.
2. the marginal texture of sandwich type element according to claim 1, wherein first angle be between 6 ° and 12 °, and
Two angles are between 20 ° and 60 °.
3. the marginal texture of sandwich type element according to claim 1 or 2, wherein the first direction is X-direction and described
Second direction is Y-direction or the first direction is Y-direction and the second direction is X-direction.
4. the marginal texture of sandwich type element according to claim 1 or 2, wherein each elementary layer include first material layer and
Second material layer, and these first material layers in these elementary layers and these second material layer alternative stackeds.
5. the marginal texture of sandwich type element according to claim 4, wherein first material layer include silicon nitride layer, the second material
The bed of material includes silicon oxide layer.
6. the marginal texture of sandwich type element according to claim 4, wherein first material layer include conductor layer, the second material
Layer includes insulating layer.
7. a kind of manufacturing method of the marginal texture of sandwich type element, including:
Form the lamination for including multilevel-cell layer;
Multiple mask layer forming step, respectively in forming a mask layer on the lamination;And
After the formation of each mask layer, alternately multiple etching step and at least once mask layer reduction step, wherein often
Etch step removes the layer unit layer that the mask layer is exposed, wherein
In the sandwich type element by the first direction for forming contact hole, the boundary ratio for any mask layer that do not cut down is through last
The boundary for the previous mask layer once cut down inside contracts, and
In a second direction, the boundary of any mask layer without reduction at least exceeds the previous mask layer cut down through last time
Boundary, and the distance between the boundary of the mask layer formed at first and sandwich type element are less than the shape at first in a first direction
At mask layer boundary and the distance between sandwich type element.
8. the manufacturing method of the marginal texture of sandwich type element according to claim 7, wherein any mask without reduction
The boundary of the second direction of layer is preset as being aligned the boundary of the second direction of the previous mask layer without reduction.
9. the manufacturing method of the marginal texture of sandwich type element according to claim 7, wherein each elementary layer includes first
Material layer and second material layer, and these first material layers in these elementary layers and these second material layer alternative stackeds.
10. the manufacturing method of the marginal texture of sandwich type element according to claim 9, wherein second in each elementary layer
Material layer is located on first material layer, and the method for removing the layer unit layer exposed includes:
The one layer of second material layer exposed is removed, is etching suspension layer with one layer of adjacent first material layer of lower section;And
One layer of first material layer previously as etching suspension layer is removed, is etching with one layer of adjacent second material layer of lower section
Suspension layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710236018.5A CN108695334B (en) | 2017-04-12 | 2017-04-12 | Edge structure of multilayer element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710236018.5A CN108695334B (en) | 2017-04-12 | 2017-04-12 | Edge structure of multilayer element and manufacturing method thereof |
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| CN104733462A (en) * | 2013-12-20 | 2015-06-24 | 爱思开海力士有限公司 | Semiconductor device and method of manufacturing the same |
| CN104810372A (en) * | 2014-01-27 | 2015-07-29 | 三星电子株式会社 | Vertical non-volatile memory devices and methods of manufacturing the same |
| US9337040B1 (en) * | 2014-12-05 | 2016-05-10 | Varian Semiconductor Equipment Associates, Inc. | Angled ion beam processing of heterogeneous structure |
| US20160133644A1 (en) * | 2010-06-24 | 2016-05-12 | Jaegoo Lee | Semiconductor memory devices including asymmetric word line pads |
| CN105990364A (en) * | 2015-01-15 | 2016-10-05 | 力晶科技股份有限公司 | Semiconductor structure and manufacturing method thereof |
| US20160293539A1 (en) * | 2015-03-31 | 2016-10-06 | Joyoung Park | Three-dimensional semiconductor device |
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| US20160133644A1 (en) * | 2010-06-24 | 2016-05-12 | Jaegoo Lee | Semiconductor memory devices including asymmetric word line pads |
| CN104733462A (en) * | 2013-12-20 | 2015-06-24 | 爱思开海力士有限公司 | Semiconductor device and method of manufacturing the same |
| CN104810372A (en) * | 2014-01-27 | 2015-07-29 | 三星电子株式会社 | Vertical non-volatile memory devices and methods of manufacturing the same |
| US9337040B1 (en) * | 2014-12-05 | 2016-05-10 | Varian Semiconductor Equipment Associates, Inc. | Angled ion beam processing of heterogeneous structure |
| CN105990364A (en) * | 2015-01-15 | 2016-10-05 | 力晶科技股份有限公司 | Semiconductor structure and manufacturing method thereof |
| US20160293539A1 (en) * | 2015-03-31 | 2016-10-06 | Joyoung Park | Three-dimensional semiconductor device |
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