CN108695215A - Wafer sliver apparatus - Google Patents
Wafer sliver apparatus Download PDFInfo
- Publication number
- CN108695215A CN108695215A CN201810570394.2A CN201810570394A CN108695215A CN 108695215 A CN108695215 A CN 108695215A CN 201810570394 A CN201810570394 A CN 201810570394A CN 108695215 A CN108695215 A CN 108695215A
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- China
- Prior art keywords
- sliver
- wafer
- head
- supporting mechanism
- driving
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The present invention relates to a kind of wafer sliver apparatus, including:Frame waits for sliver wafer for fixation;Sliver head is located above or below the frame, has an arc top surface;Supporting mechanism supports the sliver head, for driving the sliver head to lift and the sliver head being driven to move in the horizontal plane.The sliver apparatus can improve sliver effect.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of wafer sliver apparatus.
Background technology
Wafer refers to the silicon wafer used in silicon semiconductor production of integrated circuits, since its shape is circle, therefore referred to as wafer.
In the manufacturing process of semiconductor chip, multiple chip units, referred to as crystal grain are formed in crystal column surface.In the production process, it needs
Wafer is cut and wafer is divided into multiple crystal grain.
Laser cutting is a kind of common mode, specifically, after wafer rear pad pasting, using laser to the crystalline substance of wafer
Laser scribing is carried out on Cutting Road between grain and crystal grain, forms a plurality of cutting line that transverse and longitudinal is interlocked;Then pass through sliver apparatus
Crystal grain is divided, multiple independent crystal grain are formed.
Sliver generally use sliver knife is carried out to wafer in the prior art and carries out sliver along cutting line, be easy to cause crystal grain
Edge bursts apart, also, has particular/special requirement, sliver less efficient the shape of cutting line.Also, in sliver, due to difference
Direction is not while sliver that the stress received on crystal grain different directions is different, is easy to fall off from pad pasting, causes to damage.In order to
Crystal grain is avoided to fall off during sliver, it usually needs to use special protective film, cost higher.
It is, therefore, desirable to provide a kind of new sliver apparatus overcomes the above problem.
Invention content
The technical problem to be solved by the invention is to provide a kind of wafer sliver apparatus, the efficiency for improving sliver reduces crystalline substance
Grain damage.
To solve the above-mentioned problems, the present invention provides a kind of wafer sliver apparatus, including:Frame waits splitting for fixation
Wafer;Sliver head is located above or below the frame, has an arc top surface;Supporting mechanism supports the sliver head,
For driving the sliver head to lift and the sliver head being driven to move in the horizontal plane.
Optionally, including:The sliver head is spherical shape, hemispherical, cylinder, arc rod or lth layer.
Optionally, the sliver head is less than the size of wafer in the projection of crystal column surface.
Optionally, the curvature of the arc top surface of the sliver head is 15/m~120/m.
Optionally, the supporting mechanism is for driving the sliver head to circle in the horizontal plane.
Optionally, the angular speed of the circular motion is 5 °/s~100 °/s.
Optionally, the supporting mechanism is additionally operable to that the sliver head is driven to rotate around axle center.
Optionally, the rotating speed that the sliver head is rotated around axle center is 5 °/s~100 °/s.
Optionally, further include driving board, the supporting mechanism other end is fixed on the driving board, by the driving
Board driving is to drive the sliver head to move.
The sliver apparatus of the present invention has arc top surface including one, jacks up wafer by the arc top surface, struts wafer
The protective film at the back side, so that split between the crystal grain of wafer, it is each for position since the wafer has arc top surface
A direction can apply active force so that horizontal and vertical Cutting Road splits simultaneously, therefore for the shape need of Cutting Road
It is not high, sliver can be realized for special curved shape, inclined various Cutting Roads;Since the protective film at position is by each
The active force in a direction, all directions stress is more uniform, the problems such as being tilted from protective film to avoid crystal grain, therefore, for
The requirement of protective film is relatively low, so as to the lower protective film of use cost.Further, due to can simultaneously to all directions
Cutting Road carry out sliver, therefore can improve sliver efficiency using compared with unidirectional sliver knife sliver mode with existing,
Improve production capacity.
Description of the drawings
Fig. 1 is the structural schematic diagram of the wafer sliver apparatus of the embodiment of the invention.
Specific implementation mode
It elaborates below in conjunction with the accompanying drawings to the specific implementation mode of wafer sliver apparatus provided by the invention.
Referring to FIG. 1, the concrete structure schematic diagram of the wafer sliver apparatus for the embodiment of the invention.
The wafer sliver apparatus includes:Frame 101 waits for sliver wafer 200 for fixation;Sliver head 102 is located at described
101 lower section of frame, has an arc top surface;Supporting mechanism 103 supports the sliver head 102, for driving the sliver head
102 lift and the sliver head 102 are driven to move in the horizontal plane.
It is the wafer after having been subjected to scribing after sliver wafer 200, back side coated with protective film can be blue film or UV films etc..
After sliver wafer 200 is fixed on frame 101, the back side is vacantly towards the sliver head 102.
In the specific implementation mode, the sliver head 102 is located at 101 lower section of frame;In other specific implementations of the present invention
In mode, the sliver head 102 is located at 101 top of the frame.
The sliver head 102 has arc top surface, when needing to carry out sliver to wafer 200, by the supporting mechanism 103
It drives sliver head 102 to rise and withstands 200 back side of wafer so that wafer deforms upon.Since the sliver head 102 has arched top
Face, 200 protrusion of the wafer is arc so that the cutting with transverse direction and longitudinal direction on the wafer 200 at 102 contact position of sliver head
Line splits simultaneously so that die separation improves sliver efficiency.Due to the protective film and crystal grain at the sliver position of wafer 200
Simultaneously by the stress of all directions, so that the stress being subject at each position of crystal grain is more uniform, reduces and chipping occurs
Or the risk to fall off from pad pasting.
In this specific embodiment, the sliver head 102 is an arc rod;In other concrete modes of the present invention,
The sliver head 102 can also be the structure of the raised curved surfaces such as sphere, hemisphere, cylinder or lth layer,
Also, and using the curved surfaces of the protrusion as with top surface when wafer contacts.
In order to improve the sliver effect of sliver head 102, the size of the sliver head 102 is less than wafer size;Preferably, institute
The size for stating sliver head 102 is slightly larger than the size of intercrystalline Cutting Road.
During the curvature of the arc top surface of the sliver head 102 determines sliver again, curvature that wafer deforms upon.Institute
The curvature for stating the arc top surface of sliver head 102 can be 15/m~120/m, and relatively large curvature makes sliver head 102 and crystalline substance
Round contact surface is smaller, smaller to the regional effect except sliver position.It can be deep according to Cutting Road width, the Cutting Road of wafer
Degree selects the curvature of suitable sliver head 102 size and arc top surface.Wafer Cutting Road width is wider, and sliver area of bed is bigger,
The curvature of sliver head arc top surface is smaller.
The supporting mechanism 103 can drive sliver head 102 to move in the horizontal plane, by the crystal grain of wafer 200 everywhere it
Between split.Preferably, according to the shape of the wafer 200, the support construction 103 drives sliver head to make circumference in the horizontal plane
Movement.For example, sliver head 102 can withstand 200 center of wafer first, then, it is gradual to do radius around crystal circle center's axis
Increased circular motion, until crystal round fringes, the crystal grain of wafer position is split successively;Or 102 eleutheromorph of sliver head
200 edges of circle start to do the diminishing circular motion of radius, until 200 center of wafer.It can be according to the width between Cutting Road
The radius change rule that sliver head 102 carries out circular motion is arranged in degree, spacing etc..In the specific implementation mode of the present invention, institute
The angular speed for stating the progress circular motion of sliver head 102 could be provided as 5 °/s~100 °/s.
Further, the supporting mechanism 102 is additionally operable to that the sliver head 102 is driven to rotate around axle center.The sliver head
102 are rotated while moving in a circle, and further increase the sliver effect to wafer.The sliver head 102 around axis
The rate of heart rotation can be adjusted according to width, the spacing etc. of wafer Cutting Road.In the specific implementation mode of the present invention,
The rate that the sliver head 102 is rotated around axle center could be provided as 5 °/s~100 °/s.
The sliver apparatus further includes driving board, and 102 other end of the supporting mechanism is connected to the driving board, by
The driving board drives the movement of supporting mechanism 102 to drive the sliver head 102 to be lifted, circumference is mobile, rotation
Turn to wait movement.Specifically, the driving board may include stepper motor, to accurately control the movement shape of the sliver head 102
State.
The sliver apparatus of the present invention has arc top surface including one, jacks up wafer by the arc top surface, struts wafer
The protective film at the back side, so that split between the crystal grain of wafer, it is each for position since the wafer has arc top surface
A direction can apply active force so that horizontal and vertical Cutting Road splits simultaneously, therefore for the shape need of Cutting Road
It is not high, sliver can be realized for special curved shape, inclined various Cutting Roads;Since the protective film at position is by each
The active force in a direction, all directions stress is more uniform, the problems such as being tilted from protective film to avoid crystal grain, therefore, for
The requirement of protective film is relatively low, so as to the lower protective film of use cost.Further, due to can simultaneously to all directions
Cutting Road carry out sliver, therefore can improve sliver efficiency using compared with unidirectional sliver knife sliver mode with existing,
Improve production capacity.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (9)
1. a kind of wafer sliver apparatus, which is characterized in that including:
Frame waits for sliver wafer for fixation;
Sliver head is located above or below the frame, has an arc top surface;
Supporting mechanism supports the sliver head, for driving the sliver head to lift and driving the sliver head in horizontal plane
Interior movement.
2. wafer sliver apparatus according to claim 1, which is characterized in that including:The sliver head is spherical, hemisphere
Shape, cylinder, arc rod or lth layer.
3. wafer sliver apparatus according to claim 1, which is characterized in that the sliver head is small in the projection of crystal column surface
In the size of wafer.
4. wafer sliver apparatus according to claim 1, which is characterized in that the curvature of the arc top surface of the sliver head is
15/m~120/m.
5. wafer sliver apparatus according to claim 1, which is characterized in that the supporting mechanism is for driving the sliver
Head circles in the horizontal plane.
6. wafer sliver apparatus according to claim 5, which is characterized in that the angular speed of the circular motion be 5 °/s~
100°/s。
7. wafer sliver apparatus according to claim 1, which is characterized in that the supporting mechanism is additionally operable to split described in drive
Head are rotated around axle center.
8. wafer sliver apparatus according to claim 7, which is characterized in that the rotating speed that the sliver head is rotated around axle center is
5 °/s~100 °/s.
9. wafer sliver apparatus according to claim 1, which is characterized in that further include driving board, the supporting mechanism
The other end is fixed on the driving board, is driven by the driving board to drive the sliver head to move.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810570394.2A CN108695215A (en) | 2018-06-05 | 2018-06-05 | Wafer sliver apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810570394.2A CN108695215A (en) | 2018-06-05 | 2018-06-05 | Wafer sliver apparatus |
Publications (1)
Publication Number | Publication Date |
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CN108695215A true CN108695215A (en) | 2018-10-23 |
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CN201810570394.2A Pending CN108695215A (en) | 2018-06-05 | 2018-06-05 | Wafer sliver apparatus |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112201599A (en) * | 2020-10-14 | 2021-01-08 | 北京中科镭特电子有限公司 | Multi-blade wafer splitting device and splitting processing method |
CN112885746A (en) * | 2021-01-20 | 2021-06-01 | 中国科学院微电子研究所 | Lobe of a leaf device |
CN117621279A (en) * | 2023-12-05 | 2024-03-01 | 江苏协鑫特种材料科技有限公司 | Splitting machine for processing semiconductor wafer |
-
2018
- 2018-06-05 CN CN201810570394.2A patent/CN108695215A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112201599A (en) * | 2020-10-14 | 2021-01-08 | 北京中科镭特电子有限公司 | Multi-blade wafer splitting device and splitting processing method |
CN112201599B (en) * | 2020-10-14 | 2023-09-19 | 北京中科镭特电子有限公司 | Multi-blade wafer splitting device and splitting processing method |
CN112885746A (en) * | 2021-01-20 | 2021-06-01 | 中国科学院微电子研究所 | Lobe of a leaf device |
CN117621279A (en) * | 2023-12-05 | 2024-03-01 | 江苏协鑫特种材料科技有限公司 | Splitting machine for processing semiconductor wafer |
CN117621279B (en) * | 2023-12-05 | 2024-05-24 | 江苏协鑫特种材料科技有限公司 | Splitting machine for processing semiconductor wafer |
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Application publication date: 20181023 |