CN108682932B - Method for manufacturing micro-strip circuit on ferrite - Google Patents
Method for manufacturing micro-strip circuit on ferrite Download PDFInfo
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- CN108682932B CN108682932B CN201810366261.3A CN201810366261A CN108682932B CN 108682932 B CN108682932 B CN 108682932B CN 201810366261 A CN201810366261 A CN 201810366261A CN 108682932 B CN108682932 B CN 108682932B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a method for manufacturing a low-cost micro-strip circuit on ferrite, which comprises the following steps: a. attaching a mask: firstly, a magnetic mask is naturally spread on a smooth and flat silicon wafer, or the magnetic mask is embedded into a silicon wafer groove corresponding to a mask pattern, then the magnetic mask is attracted from the back of the silicon wafer by an electromagnet, then a ferrite substrate is covered on the magnetic mask, and finally the electromagnet is powered off to remove the attraction on the magnetic mask so as to enable the magnetic mask to be adsorbed on the ferrite substrate without deformation; b. sputtering metal: sputtering a metal film layer required by a micro-strip circuit on a ferrite substrate in sputtering equipment; c. uncovering the mask: and placing the electromagnet on the back of the ferrite substrate, adjusting the current direction of the electromagnet to generate a repulsive force between the electromagnet and the magnetic mask, adjusting the magnitude of the repulsive force according to the magnitude of the current to enable the magnetic mask to be lifted off from the ferrite substrate without damage, and leaving the metal pattern of the micro-strip circuit on the ferrite substrate.
Description
Technical Field
The invention relates to a method for manufacturing a micro-strip circuit on ferrite.
Background
Based on ferrite microstrip line circuit components such as filters, circulators, isolators and the like are important components of radio frequency/microwave terminals, and are widely applied in the fields of radar front ends, communication base stations and the like.
For a long time, the fabrication of micro-strip circuits on ferrites at home and abroad generally adopts a method of firstly integrally sputtering a metal film layer, then photoetching and corroding, or a method of firstly sputtering seed layer metal, then photoetching, then pattern electroplating and finally corroding. The two methods both continue the traditional technology for manufacturing the thin film circuit on the ceramic substrate, relate to sputtering, photoetching, corrosion, even electroplating and the like, have more steps and more required equipment, and lead the cost of the micro-strip element on the ferrite to be high.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: provides a method for manufacturing a micro-strip circuit on ferrite with low cost.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a manufacturing method of a micro-strip circuit on ferrite comprises the following steps: a. attaching a mask: firstly, a magnetic mask is naturally spread on a smooth and flat silicon wafer, or the magnetic mask is embedded into a silicon wafer groove corresponding to a mask pattern, then the magnetic mask is attracted from the back of the silicon wafer by an electromagnet, then a ferrite substrate is covered on the magnetic mask, and finally the electromagnet is powered off to remove the attraction on the magnetic mask so as to enable the magnetic mask to be adsorbed on the ferrite substrate without deformation, wherein the magnetic mask comprises a silica gel or rubber or polyimide substrate and hard magnetic nano/micron magnetic particles dispersed in the substrate; the volume fraction of the magnetic particles in the magnetic mask is 10-80%, and the film thickness of the magnetic mask is 20-200 μm;
b. sputtering metal: sputtering a metal film layer required by a micro-strip circuit on a ferrite substrate in sputtering equipment;
c. uncovering the mask: and placing the electromagnet on the back of the ferrite substrate, adjusting the current direction of the electromagnet to generate a repulsive force between the electromagnet and the magnetic mask, adjusting the magnitude of the repulsive force according to the magnitude of the current to enable the magnetic mask to be lifted off from the ferrite substrate without damage, and leaving the metal pattern of the micro-strip circuit on the ferrite substrate.
As a preferred scheme, the ferrite substrate is a spinel ferrite or garnet ferrite or magnetoplumbite ferrite substrate; the surface roughness of the ferrite substrate is less than 300 nm.
As a preferred scheme, the magnetic particles are samarium cobalt magnetic powder, barium ferrite magnetic powder or strontium ferrite magnetic powder.
As a preferable scheme, the magnetic mask is formed by dispersing magnetic particles in silica gel or rubber or polyimide prepolymer, molding through a mold or screen printing, curing, and finally magnetizing through a magnetizing machine.
As a preferable scheme, the magnetic particles account for 30-60% of the volume fraction of the magnetic mask; the film thickness is between 30 μm and 120 μm.
Preferably, the surface roughness of the ferrite substrate is less than 100 nm.
The manufacturing method of the microstrip circuit has the beneficial effects that: the manufacturing method of the micro-strip circuit on the ferrite adopts the magnetic mask which can be repeatedly utilized as the sputtering mask, the micro-strip circuit pattern on the ferrite is directly formed in the sputtering stage, and the mask can be tightly attached to the ferrite substrate due to the adoption of the silica gel or rubber or polyimide substrate, so that the diffraction phenomenon can not occur, the subsequent procedures of photoetching, corrosion and the like are not needed, and the cost is greatly reduced compared with the traditional micro-strip circuit film process.
The magnetic mask is naturally spread on the smooth and flat silicon wafer or the magnetic mask is embedded into the silicon wafer groove corresponding to the mask pattern, then the magnetic mask is attracted from the back of the silicon wafer by the electromagnet, then the ferrite substrate is covered on the magnetic mask, and finally the electromagnet is powered off to remove the attraction on the magnetic mask so as to enable the magnetic mask to be attracted onto the ferrite substrate without deformation, so that the mask can be conveniently, quickly and accurately attached to the silicon wafer.
The surface roughness of the ferrite substrate is less than 300nm, so that the mask attaching effect is better.
Drawings
FIG. 1 is a schematic diagram of step a of the present invention.
FIG. 2 is a schematic diagram of step b of the present invention.
FIG. 3 is a schematic view of step c of the present invention.
In fig. 1 to 3: 1. ferrite substrate, 2 magnetic mask, 3 microstrip circuit metal pattern.
Detailed Description
Specific embodiments of the present invention are described in detail below.
As shown in fig. 1-3, a method for manufacturing a microstrip circuit on ferrite includes the steps of a, attaching a mask: firstly, a magnetic mask is naturally spread on a smooth and flat silicon wafer, or the magnetic mask is embedded into a silicon wafer groove corresponding to a mask pattern, then the magnetic mask is attracted from the back of the silicon wafer by an electromagnet (the attraction can be adjusted by the current of the electromagnet), and then a ferrite substrate is covered on the magnetic mask, wherein the ferrite substrate is a spinel ferrite or garnet ferrite or magnetoplumbite ferrite substrate; the surface roughness of the ferrite substrate is less than 300 nm. Finally, the electromagnet is powered off to remove the attraction force on the magnetic mask, so that the magnetic mask is adsorbed on the ferrite substrate without deformation;
the magnetic mask comprises a silica gel or rubber or polyimide matrix and nano/micron magnetic particles with hard magnetism dispersed in the matrix; the magnetic particles are samarium cobalt magnetic powder, barium ferrite magnetic powder or strontium ferrite magnetic powder. The magnetic mask is formed by dispersing magnetic particles in silica gel or rubber or polyimide prepolymer through mould forming or silk screen printing, then is solidified, and finally is magnetized through a magnetizing machine. The volume fraction of the magnetic particles in the magnetic mask is 10-80%, and the film thickness of the magnetic mask is 20-200 μm.
b. Sputtering metal: sputtering a metal film layer required by a microstrip circuit on a ferrite substrate in sputtering equipment, such as Ti/Cu, Ti/Cu/Ni/Au and the like;
c. uncovering the mask: and placing the electromagnet on the back of the ferrite substrate, adjusting the current direction of the electromagnet to generate a repulsive force between the electromagnet and the magnetic mask, adjusting the magnitude of the repulsive force according to the magnitude of the current to enable the magnetic mask to be lifted off from the ferrite substrate without damage, and leaving the metal pattern of the micro-strip circuit on the ferrite substrate.
Example 1: examples are given in the following Table
After the magnetic mask is removed, the micro-strip circuit pattern on the ferrite substrate is observed under a microscope, the edge of the metal wire is neat, no burrs or virtual edges exist, the characteristic dimension of the pattern is 200 mu m +/-5 mu m, and the requirement of the micro-strip circuit precision is met.
Example 2: examples are given in the following Table
After the magnetic mask is removed, the micro-strip circuit pattern on the ferrite substrate is observed under a microscope, the edge of the metal wire is neat, no burrs or virtual edges exist, the characteristic dimension of the pattern is 100 mu m +/-2 mu m, and the requirement of the micro-strip circuit precision is met.
The above-mentioned embodiments are merely illustrative of the principles and effects of the present invention, and some embodiments may be used, not restrictive; it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the inventive concept of the present invention, and these changes and modifications belong to the protection scope of the present invention.
Claims (5)
1. A manufacturing method of a micro-strip circuit on ferrite comprises the following steps: a. attaching a mask: firstly, naturally spreading a magnetic mask on a smooth and flat silicon wafer, or embedding the magnetic mask into a silicon wafer groove corresponding to a mask pattern, then attracting the magnetic mask from the back of the silicon wafer by an electromagnet, then covering a soft magnetic ferrite substrate on the magnetic mask, and finally powering off the electromagnet to remove the attraction on the magnetic mask so as to enable the magnetic mask to be adsorbed on the ferrite substrate without deformation, wherein the magnetic mask comprises a silica gel or rubber or polyimide substrate and hard magnetic nano/micron magnetic particles dispersed in the substrate; the volume fraction of the magnetic particles in the magnetic mask is 10-80%, and the film thickness of the magnetic mask is 20-200 μm; the magnetic mask is formed by dispersing magnetic particles in silica gel or rubber or polyimide prepolymer through mould forming or silk-screen printing, then is solidified, and finally is magnetized through a magnetizing machine;
b. sputtering metal: sputtering a metal film layer required by a micro-strip circuit on a ferrite substrate in sputtering equipment;
c. uncovering the mask: and placing the electromagnet on the back of the ferrite substrate, adjusting the current direction of the electromagnet to generate a repulsive force between the electromagnet and the magnetic mask, adjusting the magnitude of the repulsive force according to the magnitude of the current to enable the magnetic mask to be lifted off from the ferrite substrate without damage, and leaving the metal pattern of the micro-strip circuit on the ferrite substrate.
2. The method for manufacturing a microstrip-on-ferrite circuit according to claim 1, wherein: the ferrite substrate is a spinel ferrite or garnet ferrite or magnetoplumbite ferrite substrate; the surface roughness of the ferrite substrate is less than 300 nm.
3. The method for manufacturing a microstrip-on-ferrite circuit according to claim 1, wherein: the magnetic particles are samarium cobalt magnetic powder, barium ferrite magnetic powder or strontium ferrite magnetic powder.
4. The method for manufacturing a microstrip-on-ferrite circuit according to claim 3, wherein: the magnetic particles account for 30-60% of the volume fraction of the magnetic mask; the film thickness is between 30 μm and 120 μm.
5. The method for manufacturing a microstrip-on-ferrite circuit according to claim 4, wherein: the surface roughness of the ferrite substrate is less than 100 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810366261.3A CN108682932B (en) | 2018-04-23 | 2018-04-23 | Method for manufacturing micro-strip circuit on ferrite |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810366261.3A CN108682932B (en) | 2018-04-23 | 2018-04-23 | Method for manufacturing micro-strip circuit on ferrite |
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| CN108682932A CN108682932A (en) | 2018-10-19 |
| CN108682932B true CN108682932B (en) | 2020-12-11 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114156621B (en) * | 2022-02-07 | 2022-04-19 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Lumped parameter circulator for communication based on MEMS technology and manufacturing method thereof |
| CN114914647B (en) * | 2022-05-17 | 2023-04-28 | 电子科技大学 | Tunable broadband band-stop filter based on ferrite material |
| CN115747736A (en) * | 2022-10-31 | 2023-03-07 | 华东光电集成器件研究所 | Preparation method and clamp for patterning wafer-level deep-cavity deposition film |
Citations (5)
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| JP2007256311A (en) * | 2006-03-20 | 2007-10-04 | Toppan Printing Co Ltd | Metal mask for sputtering, color filter, and manufacturing method therefor |
| CN103116428A (en) * | 2013-01-30 | 2013-05-22 | 无锡力合光电传感技术有限公司 | Device, usage method and application for fixing masking film plate on substrate |
| CN103243295A (en) * | 2013-05-16 | 2013-08-14 | 中国电子科技集团公司第四十一研究所 | Method for preparing functional coating on surface of aluminum alloy selectively |
| CN103578962A (en) * | 2012-07-20 | 2014-02-12 | 中国科学院电工研究所 | Metallizing method for chip front electrode and auxiliary devices |
| CN106450624A (en) * | 2016-08-22 | 2017-02-22 | 苏州华博电子科技有限公司 | Ferrite micro-strip circulator |
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- 2018-04-23 CN CN201810366261.3A patent/CN108682932B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007256311A (en) * | 2006-03-20 | 2007-10-04 | Toppan Printing Co Ltd | Metal mask for sputtering, color filter, and manufacturing method therefor |
| CN103578962A (en) * | 2012-07-20 | 2014-02-12 | 中国科学院电工研究所 | Metallizing method for chip front electrode and auxiliary devices |
| CN103116428A (en) * | 2013-01-30 | 2013-05-22 | 无锡力合光电传感技术有限公司 | Device, usage method and application for fixing masking film plate on substrate |
| CN103243295A (en) * | 2013-05-16 | 2013-08-14 | 中国电子科技集团公司第四十一研究所 | Method for preparing functional coating on surface of aluminum alloy selectively |
| CN106450624A (en) * | 2016-08-22 | 2017-02-22 | 苏州华博电子科技有限公司 | Ferrite micro-strip circulator |
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