CN108682696A - Compound antireflective coating enhancing solar cell of a kind of plasmon and preparation method thereof - Google Patents
Compound antireflective coating enhancing solar cell of a kind of plasmon and preparation method thereof Download PDFInfo
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- CN108682696A CN108682696A CN201810360846.4A CN201810360846A CN108682696A CN 108682696 A CN108682696 A CN 108682696A CN 201810360846 A CN201810360846 A CN 201810360846A CN 108682696 A CN108682696 A CN 108682696A
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- 239000006117 anti-reflective coating Substances 0.000 title claims abstract description 58
- 150000001875 compounds Chemical class 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 36
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000004528 spin coating Methods 0.000 claims abstract description 22
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 17
- 239000002105 nanoparticle Substances 0.000 claims abstract description 14
- 239000010931 gold Substances 0.000 claims abstract description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 49
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 15
- 229910021389 graphene Inorganic materials 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 36
- 238000003756 stirring Methods 0.000 description 21
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 230000007062 hydrolysis Effects 0.000 description 9
- 238000006460 hydrolysis reaction Methods 0.000 description 9
- 239000011259 mixed solution Substances 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000006228 supernatant Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 6
- 238000005119 centrifugation Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000001509 sodium citrate Substances 0.000 description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 239000005030 aluminium foil Substances 0.000 description 3
- 229960005070 ascorbic acid Drugs 0.000 description 3
- 235000010323 ascorbic acid Nutrition 0.000 description 3
- 239000011668 ascorbic acid Substances 0.000 description 3
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000002242 deionisation method Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910001961 silver nitrate Inorganic materials 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- GDSOZVZXVXTJMI-SNAWJCMRSA-N (e)-1-methylbut-1-ene-1,2,4-tricarboxylic acid Chemical compound OC(=O)C(/C)=C(C(O)=O)\CCC(O)=O GDSOZVZXVXTJMI-SNAWJCMRSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of solar cell, a kind of compound antireflective coating enhancing solar cell of plasmon and preparation method thereof is disclosed.The compound antireflective coating of plasmon enhances solar cell, includes solar cell, metal nanoparticle layer and antireflection film layer successively from the bottom to top；Metal nanoparticle is Nano silver grain, gold nanoparticle or platinum nanoparticles in the metal nanoparticle layer；The antireflection film layer is titanium dioxide；The solar cell is schottky junction solar cell.The present invention realizes the high photoelectric conversion efficiency of battery by solar battery surface spin coating metal nanoparticle, enhancing the light absorption of the scattering effect and solar cell to sunlight；By spin coating titanium dioxide antireflective coating, it is effectively reduced the reflection of light, enhances absorption of the solar cell for light, improves the size of solar cell photoelectric current, finally improves the photoelectric conversion efficiency of solar cell.
Description
Technical field
The invention belongs to solar cell field, more particularly to a kind of compound antireflective coating of plasmon enhances solar cell
And preparation method thereof.
Background technology
Solar cell is that we mainly utilize solar energy as a kind of direct device for carrying out energy conversion using sunlight
Mode.How to be emphasis of people's attention to its further photoelectric conversion efficiency that promoted.The table of most solar cell
The reflectivity in face is higher, and weaker for the ability of the capture and absorption of light, the energy source that this allows for solar cell is big
Big dissipation.Traditionally we enhance absorption of the solar cell for light using antireflective coating as optical gain structure.
However it is limited to optical principle, single antireflection film can only have maximum anti-reflective effect for the light of single wavelength, for it
The light of his wavelength is then without maximum anti-reflective effect.Although double-layer reflection reducing coating can have anti-reflection effect for the light of multiple wavelength
Fruit, however solar spectral is continuous, and the problems such as double-layer reflection reducing coating itself there is the interface loss between film and film.Cause
The anti-reflective effect how this research is obtained on broader solar spectral preferably for sunlight is very necessary.
Invention content
In order to overcome the disadvantages mentioned above and deficiency of the prior art, it is multiple that the purpose of the present invention is to provide a kind of plasmons
Antireflective coating is closed, the photoelectric conversion efficiency of solar cell can be improved.
Another object of the present invention is to provide the preparation methods of the compound antireflective coating of above-mentioned phasmon.
The purpose of the present invention is achieved through the following technical solutions：
A kind of compound antireflective coating enhancing solar cell of plasmon, includes solar cell, metal successively from the bottom to top
Nanoparticle layers and antireflection film layer.
Metal nanoparticle is Nano silver grain, gold nanoparticle or platinum nanoparticle in the metal nanoparticle layer
Son, preferably Nano silver grain；
The antireflection film layer is preferably titanium dioxide.
Metal nanoparticle layer is completely covered in the antireflection film layer.
The solar cell is schottky junction solar cell, preferably graphene schottky junction solar cell, the Xiao Te
Base junction solar cell includes hearth electrode, GaAs substrates, graphene layer and top electrode successively from top to bottom.
The metal nanoparticle layer is arranged in the surface of solar cell, especially electrode and the stone not being partially covered by the electrodes
On black alkene layer.
The thickness of the antireflective coating is 30~300nm.The thickness of antireflection film layer is preferably greater than metal nanoparticle layer
Thickness.
The preparation method of the compound antireflective coating solar cell of plasmon, includes the following steps：
(1) sol solution of metal nanoparticle is configured；
(2) sol solution of antireflective coating layer material is configured；
(3) sol solution of the sol solution of metal nanoparticle and antireflective coating layer material is spin-coated on to sun electricity successively
The surface in pond obtains the compound antireflective coating solar cell of plasmon.
The sol solution of metal nanoparticle is preferably nano silver colloidal sol, and nano silver colloidal sol is prepared into using conventional method
It arrives.The specific preparation method of nano silver colloidal sol is：Using water as solvent, sodium citrate is buffer, using reducing agent also orthonitric acid
Silver obtains colloidal sol stoste；Colloidal sol stoste is centrifuged, supernatant liquor is removed, lower layer adds water-dispersed, centrifuges again, disperses, so
It repeats, after last time centrifuges, nano silver is mixed with organic solvent, obtain nano silver colloidal sol solution.The reducing agent is anti-
Bad hematic acid；The reducing agent is added in the form of being added dropwise, and when being restored, the pH of solution is 6.
The sol solution of the antireflective coating layer material is preferably TiO 2 sol；The TiO 2 sol is using normal
The preparation method of rule obtains.
For the sol solution of metal nanoparticle when carrying out spin coating, the rotating speed of spin coating is 2500~4500r/min, spin coating
Time is 20~100 seconds；For the sol solution of antireflective coating layer material when carrying out spin coating, the rotating speed of spin coating is 2500~4500r/
The time of min, spin coating are 50~100 seconds.
Compared with prior art, the present invention has the following advantages and beneficial effect：
(1) present invention by solar battery surface spin coating metal nanoparticle (such as：Ag nano particles), utilize alloy
The scattering section of grain enhances the scattering effect to sunlight, while utilizing Localized field enhancement solar cell strong around nano particle
Light absorption, the final photoelectric conversion efficiency for realizing that battery is high；
(2) present invention is effectively reduced the reflection of light, enhances solar-electricity by spin coating titanium dioxide antireflective coating
Absorption of the pond for light, improves the size of solar cell photoelectric current, finally improves the photoelectric conversion efficiency of solar cell；
(3) preparation method of the invention is simple and effective, and cell photoelectric transfer efficiency enhancing effect is apparent.
Description of the drawings
Fig. 1, which is the compound antireflective coating of plasmon of the embodiment of the present invention, enhances the structural schematic diagram of solar cell；
Fig. 2, which is the compound antireflective coating of plasmon of the embodiment of the present invention 1, enhances nano-Ag particles in solar cell
Scanning electron microscope diagram；
Fig. 3, which is the compound antireflective coating of plasmon of the embodiment of the present invention 1, enhances the light microscope of solar cell
Figure；
Fig. 4 is solar cell (no antireflection film layer and metal nanoparticle layer) (i.e. intrinsic electricity of the embodiment of the present invention 1
Pond) and plasmon compound antireflective coating enhancing solar cell (i.e. compound antireflective coating battery) current-voltage relation
Curve graph.
Specific implementation mode
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
The structural schematic diagram of the compound antireflective coating enhancing solar cell of plasmon of the present invention is as shown in Figure 1, under
Supreme includes solar cell, metal nanoparticle layer 5 and antireflection film layer 6 successively.
Metal nanoparticle is Nano silver grain, gold nanoparticle or platinum nanoparticle in the metal nanoparticle layer
Son, preferably Nano silver grain；
The antireflection film layer is preferably titanium dioxide.
Metal nanoparticle layer is completely covered in the antireflection film layer.
The solar cell is schottky junction solar cell, preferably graphene schottky junction solar cell, the Xiao Te
Base junction solar cell includes hearth electrode 1, GaAs substrates 2, graphene layer 3 and top electrode 4 successively from top to bottom.
The metal nanoparticle layer is arranged in the surface of solar cell, especially electrode and the stone not being partially covered by the electrodes
On black alkene layer.
Embodiment 1
As shown in Figure 1, the compound antireflective coating of the plasmon of the present embodiment enhances solar cell, wrap successively from the bottom to top
Include hearth electrode 1 (Au), GaAs substrates 2, graphene film 3, top electrode 4, metal nanoparticle layer 5, titanium dioxide antireflective film 6.
Hearth electrode 1 (Au), GaAs substrates 2, graphene film 3 and top electrode 4 form graphene schottky junction sun electricity
Pond.Graphene schottky junction solar cell is obtained using conventional method.
The preparation method of the compound antireflective coating of plasmon of the present embodiment, includes the following steps：
(1) preparation of nano silver colloidal sol：The silver nitrate solution for first taking a concentration of 0.01mol/L of 100ml, is then added
The 1wt% sodium citrate solutions of 2ml are as buffer, under stirring conditions (rotating speed 900r/min), are added dropwise 1ml's dropwise
The ascorbic acid solution of a concentration of 1.4mg/ml is used in combination sodium hydroxide solution to adjust pH to 6, after maintaining 1 hour of stirring, stops
Stirring, obtains nano silver colloidal sol stoste；Taking 10ml colloidal sol stostes to be centrifuged, (rotating speed 7200r/min, centrifugation time are 10 points
Clock), supernatant liquor is removed, leaving again will be in each centrifuge tube with deionized water after bottom precipitation and turbid (being about 1 milliliter)
Liquid level be supplemented to 10 milliliters, ultrasonic disperse 15 minutes is then centrifuged for, dispersion, after being so repeated 3 times, with 8000r/min turn
Speed centrifugation 10 minutes is added acetone supplement liquid level to 5 milliliters after removing supernatant liquor, obtains nano silver colloidal sol；
(2) preparation of TiO 2 sol：The ethyl acetate of the absolute ethyl alcohol of 23ml and 0.5ml are mixed, are then added
The butyl titanate of 10ml forms the precursor solution of titania gel；By the absolute ethyl alcohol of 12ml, the deionization of 1.5ml
The 65wt% salpeter solutions of water and 1.5ml mix, and obtain hydrolysis mixed solution；(rotating speed 900r/ under stirring conditions
Min), drip to the speed of 1.5 drops with per second 1 and hydrolysis mixed solution be added dropwise dropwise in the precursor solution of stirring,
After hydrolysis mixed solution is added dropwise in precursor solution completely, stirring is maintained 2 hours, aluminium-foil paper is used after the completion of stirring
Sealed beaker mouth is covered, and stands 24 hours of aging at room temperature, to obtain TiO 2 sol；
(3) spin coating of compound antireflective coating：Coating machine rotating speed is set as 3000r/min, preliminary operation 5 seconds shows if there is film flying
As then adjusting the position of solar cell until film flying does not occur, Schilling spin coater works (2500r/min) under lower-speed state, and
The nano silver colloidal sol of 100 μ l is drawn with liquid-transfering gun and toward dripping on solar cell, later into high speed spin coating, rotating speed is afterwards
3000r/min is often 60 seconds, then draws the TiO 2 sol of 100 μ l with liquid-transfering gun again, and Schilling coating machine is in low speed
Under state, then drip on two drop TiO 2 sols to solar cell, high speed rotation can obtain nano silver particles after one minute
Composite titanium dioxide antireflective coating enhances solar cell to get to the compound antireflective coating of plasmon.
The thickness of titanium dioxide antireflection layer is 120nm.
Fig. 2, which is the compound antireflective coating of plasmon of the present embodiment, enhances the scanning electricity of silver nano-grain in solar cell
Sub- microscope photo, as can be seen from the figure the distribution of silver nano-grain is fewer, and grain size is about 80 rans.Fig. 3 is real
Apply the optical microscope of the compound antireflective coating enhancing solar cell of plasmon of example 1；Fig. 4 is the sun electricity of embodiment 1
The electric current-of pond (no antireflection film layer and metal nanoparticle layer) and the compound antireflective coating enhancing solar cell of plasmon
Voltage curve figure.The pattern on the surface of nano silver particles composite titanium dioxide antireflective coating as can be seen from Figure 3.Fig. 4 is
Solar cell current-voltage relation curve, it can be seen that the photoelectric current of solar cell improves about 27.33%
The present invention introduces silver nano-grain and titanium dioxide antireflective coating in solar cell, due to the local of nano particle
On the one hand surface plasma bulk effect can enhance the scattering process to incident sunlight, improve sunlight inside active area
Propagation distance to improve light absorption.Meanwhile after the local surface phasmon of silver nano-grain is excited, around particle
Strong local electric field can be formed, according to Fermi's Golden-rule, this strong local electric field can improve the suction of battery incident photon
Receive rate.Simultaneously additionally by antireflective coating is introduced, less capable of being reflected of light is allowed, increase incident solar cell
The quantity of light, to increase the luminous point efficiency of battery.
Embodiment 2
The compound antireflective coating of plasmon of the present embodiment enhances solar cell, includes hearth electrode successively from the bottom to top
(Au), GaAs substrates, graphene film, top electrode, metal nanoparticle layer, titanium dioxide antireflective film.
Hearth electrode (Au), GaAs substrates, graphene film and top electrode form graphene schottky junction solar cell.Stone
Black alkene schottky junction solar cell is obtained using conventional method.
The preparation method of the compound antireflective coating of plasmon of the present embodiment, includes the following steps：
(1) preparation of nano silver colloidal sol：The silver nitrate solution for first taking a concentration of 0.01mol/L of 100ml, is then added
The 1wt% sodium citrate solutions of 2ml are as buffer, under stirring conditions (rotating speed 900r/min), are added dropwise 1ml's dropwise
The ascorbic acid solution of a concentration of 1.4mg/ml is used in combination sodium hydroxide solution to adjust pH to 6, after maintaining 1 hour of stirring, stops
Stirring, obtains nano silver colloidal sol stoste；Taking 10ml colloidal sol stostes to be centrifuged, (rotating speed 7200r/min, centrifugation time are 10 points
Clock), supernatant liquor is removed, leaving again will be in each centrifuge tube with deionized water after bottom precipitation and turbid (being about 1 milliliter)
Liquid level be supplemented to 10 milliliters, ultrasonic disperse 15 minutes is then centrifuged for, dispersion, after being so repeated 3 times, with 8000r/min turn
Speed centrifugation 10 minutes is added acetone supplement liquid level to 5 milliliters after removing supernatant liquor, obtains nano silver colloidal sol；
(2) preparation of TiO 2 sol：The ethyl acetate of the absolute ethyl alcohol of 23ml and 0.5ml are mixed, are then added
The butyl titanate of 10ml forms the precursor solution of titania gel；By the absolute ethyl alcohol of 12ml, the deionization of 1.5ml
The 65wt% salpeter solutions of water and 1.5ml mix, and obtain hydrolysis mixed solution；(rotating speed 900r/ under stirring conditions
Min), drip to the speed of 1.5 drops with per second 1 and hydrolysis mixed solution be added dropwise dropwise in the precursor solution of stirring,
After hydrolysis mixed solution is added dropwise in precursor solution completely, stirring is maintained 2 hours, aluminium-foil paper is used after the completion of stirring
Sealed beaker mouth is covered, and stands 24 hours of aging at room temperature, to obtain TiO 2 sol；
(3) spin coating of compound antireflective coating：Coating machine rotating speed is set as 3000r/min, preliminary operation 5 seconds shows if there is film flying
As then adjusting the position of solar cell until film flying does not occur, Schilling spin coater works (2500r/min) under lower-speed state, and
The nano silver colloidal sol of 100 μ l is drawn with liquid-transfering gun and toward dripping on solar cell, later into high speed spin coating, rotating speed is afterwards
3000r/min is often 60 seconds, then draws the TiO 2 sol of 100 μ l with liquid-transfering gun again, and Schilling coating machine is in low speed
Under state, then drip on 1 drop TiO 2 sol to solar cell, high speed rotation can obtain nano silver particles after one minute multiple
Close titanium dioxide antireflective coating enhances solar cell to get to the compound antireflective coating of plasmon.
The thickness of titanium dioxide antireflection layer is 100nm.
Embodiment 3
The compound antireflective coating of plasmon of the present embodiment enhances solar cell, includes hearth electrode successively from the bottom to top
(Au), GaAs substrates, graphene film, top electrode, metal nanoparticle layer, titanium dioxide antireflective film.
Hearth electrode (Au), GaAs substrates, graphene film and top electrode form graphene schottky junction solar cell.Stone
Black alkene schottky junction solar cell is obtained using conventional method.
The preparation method of the compound antireflective coating of plasmon of the present embodiment, includes the following steps：
(1) preparation of nano silver colloidal sol：The silver nitrate solution for first taking a concentration of 0.01mol/L of 100ml, is then added
The 1wt% sodium citrate solutions of 2ml are as buffer, under stirring conditions (rotating speed 900r/min), are added dropwise 1ml's dropwise
The ascorbic acid solution of a concentration of 1.4mg/ml is used in combination sodium hydroxide solution to adjust pH to 6, after maintaining 1 hour of stirring, stops
Stirring, obtains nano silver colloidal sol stoste；Taking 10ml colloidal sol stostes to be centrifuged, (rotating speed 7200r/min, centrifugation time are 10 points
Clock), supernatant liquor is removed, leaving again will be in each centrifuge tube with deionized water after bottom precipitation and turbid (being about 1 milliliter)
Liquid level be supplemented to 10 milliliters, ultrasonic disperse 15 minutes is then centrifuged for, dispersion, after being so repeated 3 times, with 8000r/min turn
Speed centrifugation 10 minutes is added acetone supplement liquid level to 5 milliliters after removing supernatant liquor, obtains nano silver colloidal sol；
(2) preparation of TiO 2 sol：The ethyl acetate of the absolute ethyl alcohol of 23ml and 0.5ml are mixed, are then added
The butyl titanate of 10ml forms the precursor solution of titania gel；By the absolute ethyl alcohol of 12ml, the deionization of 1.5ml
The 65wt% salpeter solutions of water and 1.5ml mix, and obtain hydrolysis mixed solution；(rotating speed 900r/ under stirring conditions
Min), drip to the speed of 1.5 drops with per second 1 and hydrolysis mixed solution be added dropwise dropwise in the precursor solution of stirring,
After hydrolysis mixed solution is added dropwise in precursor solution completely, stirring is maintained 2 hours, aluminium-foil paper is used after the completion of stirring
Sealed beaker mouth is covered, and stands 24 hours of aging at room temperature, to obtain TiO 2 sol；
(3) spin coating of compound antireflective coating：Coating machine rotating speed is set as 3000r/min, preliminary operation 5 seconds shows if there is film flying
As then adjusting the position of solar cell until film flying does not occur, Schilling spin coater works (2500r/min) under lower-speed state, and
The nano silver colloidal sol of 100 μ l is drawn with liquid-transfering gun and toward dripping on solar cell, later into high speed spin coating, rotating speed is afterwards
3000r/min is often 60 seconds, then draws the TiO 2 sol of 100 μ l with liquid-transfering gun again, and Schilling coating machine is in low speed
Under state, then drip on 4 drop TiO 2 sols to solar cell, high speed rotation can obtain nano silver particles after one minute multiple
Close titanium dioxide antireflective coating enhances solar cell to get to the compound antireflective coating of plasmon.
The thickness of titanium dioxide antireflection layer is 200nm.
A concentration of 0.001-10mol/L of the sol solution of the metal nanoparticle of the present invention, metal nanoparticle layer
Thickness is 30-100 nanometers, and the grain size of metal nanoparticle is 10~80nm.
The thickness of the metal nanoparticle layer is 30-100 nanometers, and the grain size of metal nanoparticle is 10~80nm.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (8)
1. a kind of compound antireflective coating of plasmon enhances solar cell, it is characterised in that：Include the sun successively from the bottom to top
Battery, metal nanoparticle layer and antireflection film layer.
2. the compound antireflective coating of plasmon enhances solar cell according to claim 1, it is characterised in that：The metal
Metal nanoparticle is Nano silver grain, gold nanoparticle or platinum nanoparticles in nanoparticle layers；
The antireflection film layer is titanium dioxide.
3. the compound antireflective coating of plasmon enhances solar cell according to claim 2, it is characterised in that：The metal
Metal nanoparticle is Nano silver grain in nanoparticle layers.
4. the compound antireflective coating of plasmon enhances solar cell according to claim 1, it is characterised in that：The sun
Battery is schottky junction solar cell.
5. the compound antireflective coating of plasmon enhances solar cell according to claim 4, it is characterised in that：The Xiao Te
Base junction solar cell includes hearth electrode, GaAs substrates, graphene layer and top electrode successively from top to bottom.
6. enhance the preparation method of solar cell according to the compound antireflective coating of any one of Claims 1 to 5 plasmon,
It is characterized in that：Include the following steps：
(1) sol solution of metal nanoparticle is configured；
(2) sol solution of antireflective coating layer material is configured；
(3) sol solution of the sol solution of metal nanoparticle and antireflective coating layer material is spin-coated on solar cell successively
Surface obtains the compound antireflective coating solar cell of plasmon.
7. the preparation method of the compound antireflective coating enhancing solar cell of plasmon, feature exist according to claim 6
In：The solar cell is schottky junction solar cell, and the sol solution of metal nanoparticle is nano silver colloidal sol；
The sol solution of the antireflective coating layer material is TiO 2 sol.
8. the preparation method of the compound antireflective coating enhancing solar cell of plasmon, feature exist according to claim 6
In：For the sol solution of metal nanoparticle when carrying out spin coating, the rotating speed of spin coating is 2500~4500r/min, the time of spin coating
It is 20~100 seconds；For the sol solution of antireflective coating layer material when carrying out spin coating, the rotating speed of spin coating is 2500~4500r/min,
The time of spin coating is 50~100 seconds.
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| PCT/CN2018/110980 WO2019200861A1 (en) | 2018-04-20 | 2018-10-19 | Plasmon composite anti-reflection film enhanced solar cell and preparation method therefor |
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