CN108682654A - The production method of TFT substrate - Google Patents
The production method of TFT substrate Download PDFInfo
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- CN108682654A CN108682654A CN201810433816.1A CN201810433816A CN108682654A CN 108682654 A CN108682654 A CN 108682654A CN 201810433816 A CN201810433816 A CN 201810433816A CN 108682654 A CN108682654 A CN 108682654A
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- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 125
- 239000002184 metal Substances 0.000 claims abstract description 125
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000001312 dry etching Methods 0.000 claims abstract description 12
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention provides a kind of production method of TFT substrate,The second metal wire being superimposed on above the first metal wire is made using the second optical cover process of 4Mask,Slit is equipped at second metal line pattern both sides outer rim of the second light shield used in the processing procedure,Compared to using traditional light shield,The slit formation groove can be corresponded to by being formed by the both sides of photoresist design layer,And the thickness of photoresist design layer both sides will reduce,When carrying out dry etching to photoresist design layer,Since the thickness of photoresist design layer both sides reduces,Under same dry etching conditions,The width loss amount of photoresist design layer can become larger,And then size penalty amount of the second metal layer in second of wet etching can be caused to become larger,Uncomfortable section process conditions are so just achieved the purpose that and have realized and reduce the second metal line-width,When the second metal wire being made to shift with respect to the first metal wire,Second metal wire reduces in the remaining risk in bottom of slope edge,The vacant regulated quantity of processing procedure becomes larger.
Description
Technical field
The present invention relates to display technology field more particularly to a kind of production methods of TFT substrate.
Background technology
In display technology field, liquid crystal display (Liquid Crystal Display, LCD) and Organic Light Emitting Diode
The flat-panel monitors such as display (Organic Light Emitting Diode, OLED) gradually replace CRT monitor, extensively
General is applied to LCD TV, mobile phone, personal digital assistant, digital camera, computer screen or laptop screen etc..
Display panel is the important component of LCD, OLED.Whether the display surface of the display panel of LCD or OLED
Plate usually all has a thin film transistor (TFT) (Thin Film Transistor, TFT) substrate.By taking the display panel of LCD as an example,
It is mainly by a TFT substrate, a liquid crystal colored filter substrate (ColorFilter, CF) and be configured between two substrates
Layer (Liquid Crystal Layer) is constituted, and operation principle is by applying driving electricity in TFT substrate and CF substrates
It presses to control the rotation of liquid crystal molecule in liquid crystal layer, the light refraction of backlight module is out generated into picture.
In TFT substrate, it is usually present a kind of structure, as shown in Fig. 1, the first metal wire (M1) 101 and the second metal
There is a situation where be superimposed (overlap) for 102 double layer of metal line of line (M2).In general, the second metal wire 102 can be covered in
The middle of first metal wire 101, but the problem of because of exposure accuracy, as shown in Fig. 2, it may occur that the first metal wire 101 and
The case where two 102 opposite offsets (shift) of metal wire, it is likely to result in the second metal wire 102 at this time in slope (taper) feather edge
Residual, so as to lead to the generation of bad (Issue).To avoid the second metal wire 102 in the residual at bottom of slope edge, then
The gap of the first metal wire 101 and the second metal wire 102 on the width need to be increased.
Usually in the structure design of TFT substrate, the aperture opening ratio of panel can be lost by increasing the width of the first metal wire 101,
Therefore can only consider from the width for reducing the second metal wire 102, then the first scheme, which is direct reduces, forms the second metal
The width of corresponding pattern on the light shield of line 102, if however the developed width of the second metal wire 102 itself is smaller (≤5 μm), due to
The resolution ratio of exposure machine limits, when the line width on light shield it is small to a certain extent when, the figure at actual exposure will be uneven, or
Person can not expose required figure, then may there is a phenomenon where the line width of the second metal wire 102 unevenness；Second scheme
It is to increase the wet etching time for forming the second metal wire 102, but the size of wire of other positions in TFT substrate can be caused to damage in this way
It loses (CD loss) amount to become larger, to which other Issue occur.
Therefore need new design method reduce such structure the second metal wire width.
Invention content
The purpose of the present invention is to provide a kind of production methods of TFT substrate, can reduce the width of the second metal wire, prevent
Residual of second metal wire in bottom of slope edge when only the overlaying structure of the first metal wire and the second metal wire shifts.
To achieve the above object, the present invention provides a kind of production method of TFT substrate, includes the following steps：
Step S1, one underlay substrate is provided, be deposited and patterned to form the first metal wire on the underlay substrate, in institute
It states the first metal wire and forms wall with deposition on underlay substrate；
Step S2, the depositing second metal layer on the wall, coats photoresist layer in the second metal layer, provides
Second light shield, second light shield have the second metal line pattern, slit are equipped at the outer rim of second metal line pattern both sides,
The photoresist layer is exposed using second light shield, is developed, the corresponding light being located above first metal wire is obtained
Pattern layer is hindered, the both sides of the photoresist design layer correspond to the slit and form groove, and the thickness of photoresist design layer (85) both sides
Thickness relative to middle part reduces；
Step S3, using the photoresist design layer as shielding layer, the second metal layer is carried out to carry out first time wet method erosion
It carves；
Step S4, dry etching is carried out to the photoresist design layer, the photoresist design layer is thinned；
Step S5, using the photoresist design layer after being thinned as shielding layer, the second metal layer is carried out wet for the second time
Method etches, and removes photoresist design layer, obtains corresponding the second metal wire being located above first metal wire.
The slit of two parallel intervals, second metal line pattern are equipped at the every side outer rim of second metal line pattern
Including shading main line and shading main line both sides set gradually from inside to outside and it is parallel with the shading main line
Interior shading by-pass and outer shading by-pass；
The slit includes the first transmissive slit and the second transmissive slit, structure between the interior shading by-pass and shading main line
At first transmissive slit, second transmissive slit is constituted between the interior shading by-pass and outer shading by-pass.
First transmissive slit, interior shading by-pass, the second transmissive slit and outer shading by-pass width be respectively a, b,
C, d, wherein 0.5 μm≤a≤1.5 μm, 0.5 μm≤b≤1.5 μm, 0.5 μm≤c≤1.5 μm, 0.5 μm≤d≤1.5 μm.
The width of second metal line pattern is L2, L2≤7 μm.
The step S1 further includes providing the first light shield, and first metal wire is formed by first light shield manufacture,
First light shield has the first metal line pattern for being correspondingly formed the first metal wire.
The width of first metal line pattern is L1, L1≤9 μm.
The width of first metal line pattern is L1, and the width of second metal line pattern is L2, L1-L2≤2 μm.
The second light shield provided in the step S2, slit thereon on the second light shield by hollowing out corresponding portion
It is formed.
The material of first metal wire and the second metal wire is one or more alloys in molybdenum, aluminium, copper, titanium.
The wall is the combination of silicon oxide layer, silicon nitride layer or both.
Beneficial effects of the present invention：The production method of the TFT substrate of the present invention, using the second optical cover process of 4Mask
The second metal wire being superimposed on above the first metal wire is made, the second metal of the second light shield used in the processing procedure is passed through
Slit is set at the outer rim of line pattern both sides, and compared to traditional light shield is used, institute can be corresponded to by being formed by the both sides of photoresist design layer
It states slit and forms groove, and the thickness of photoresist design layer both sides will reduce, when carrying out dry etching to photoresist design layer, by
Thickness in photoresist design layer both sides reduces, and under same dry etching conditions, the width loss amount of photoresist design layer can become
Greatly, and then size penalty amount of the second metal layer in second of wet etching can be caused to become larger, has so just reached and has not adjusted
Process conditions and realize reduce the second metal line-width purpose, when the second metal wire being made to shift with respect to the first metal wire,
Second metal wire reduces in the remaining risk in bottom of slope edge, and the vacant regulated quantity of processing procedure becomes larger.
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with the detailed of the present invention
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
Description of the drawings
Below in conjunction with the accompanying drawings, it is described in detail by the specific implementation mode to the present invention, technical scheme of the present invention will be made
And other beneficial effects are apparent.
In attached drawing,
Fig. 1 is the schematic diagram of double layer of metal line normal superposition in TFT substrate；
Fig. 2 is the schematic diagram of double layer of metal line staggered superposition in TFT substrate；
Fig. 3 is the flow diagram of the production method of TFT substrate of the present invention；
Fig. 4 is the process flow chart using second the second metal wire of light shield manufacture in the production method of TFT substrate of the present invention；
Fig. 5 be TFT substrate of the present invention production method in the first light shield floor map；
Fig. 6 be TFT substrate of the present invention production method in the second light shield floor map.
Specific implementation mode
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with the preferred implementation of the present invention
Example and its attached drawing are described in detail.
Fig. 3 and Fig. 4 are please referred to, the present invention provides a kind of production method of TFT substrate, includes the following steps：
Step S1, a underlay substrate 10 and the first light shield 40 are provided, using first light shield 40 in the underlay substrate
It is deposited and patterned to form the first metal wire 11 on 10, deposition forms interval on first metal wire 11 and underlay substrate 10
Layer 15.
Specifically, as shown in figure 5, first light shield 40 has the first metal for being correspondingly formed the first metal wire 11
Line pattern 41, patterning formed the first metal wire 11 specific steps include the light blockage coating step carried out successively, step of exposure,
Development step, etching step and removing photoresistance step.
Step S2, as shown in figure 4, on the wall 15 depositing second metal layer 20, in the second metal layer 20
Upper coating photoresist layer 80, provides the second light shield 90, and second light shield 90 has the second metal line pattern 95, second metal
It is equipped with slit 96 at 95 both sides outer rim of line pattern, the photoresist layer 80 is exposed using second light shield 90, is developed, is obtained
To correspondence in the photoresist design layer 85 of first metal wire, 11 top, exposure process, after light is by slit 96, due to light
Diffraction and interference effect, when photoresist layer 80 develops can 96 corresponding position of slit formed groove 86, i.e., the described photoresist design layer
85 both sides correspond to the slit 96 and form groove 86, and the thickness of 85 both sides of photoresist design layer will reduce, i.e., the described photoresist
The thickness of 85 both sides of pattern layer reduces relative to the thickness at middle part.
Specifically, the second light shield 90 provided in the step S2, slit 96 thereon pass through on the second light shield 90
It hollows out corresponding portion and is formed.
Specifically, as shown in fig. 6, being equipped with the slit 96 of two parallel intervals at 95 every side outer rim of the second metal line pattern,
Second metal line pattern 95 includes shading main line 951 and is set gradually from inside to outside in 951 both sides of shading main line
And the interior shading by-pass 952 and outer shading by-pass 953 parallel with the shading main line 951；The slit 96 includes first
Transmissive slit 961 and the second transmissive slit 962 constitute described first thoroughly between the interior shading by-pass 952 and shading main line 951
Optical slits 961 constitutes second transmissive slit 962 between the interior shading by-pass 952 and outer shading by-pass 953.
Step S3, it is shielding layer with the photoresist design layer 85, the second metal layer 20 carry out wet for the first time
Method etches.
Step S4, dry etching is carried out to the photoresist design layer 85 using etching gas, the photoresist design layer is thinned
85, while the width of the photoresist design layer 85 can also change.
Step S5, it is shielding layer with the photoresist design layer 85 after being thinned, carry out second is carried out to the second metal layer 20
Secondary wet etching removes photoresist design layer 85, obtains corresponding the second metal wire 21 for being located at first metal wire, 11 top.
It should be noted that above-mentioned steps S1 is first of optical cover process of four light shields (4Mask), above-mentioned steps S2 is extremely
Step S5 is the second optical cover process of 4Mask, as shown in figure 4, the present invention passes through the second metal line chart in the second light shield 90
Slit 96 is set at 95 both sides outer rim of case, in step s 2, compared to traditional light shield is used, after exposing the time by slit 96,
Due to light diffraction and interfere effect, the both sides of the photoresist design layer 85 can correspond to the slit 96 formed it is fluted
86, and the thickness of 85 both sides of photoresist design layer will reduce；When carrying out dry etching to photoresist design layer 85 to step S4, due to
The thickness of 85 both sides of photoresist design layer reduces, compared to using traditional light shield, under same dry etching conditions, and photoresist pattern
Width loss (loss) the amount Δ d of layer 85 can become larger, to which second metal layer 20 in step S5 can be caused to be lost in second of wet method
Size penalty (CD loss) amount Δ D when quarter becomes larger, and has so just reached uncomfortable section process conditions and has realized and reduce the second metal
The purpose of 21 width of line, when 21 opposite first metal wire 11 of the second metal wire being made to shift, the second metal wire 21 is on bottom of slope side
The remaining risk of edge reduces, and the vacant regulated quantity of processing procedure (margin) becomes larger.
Specifically, the width of the first metal line pattern 41 is L1, and the width of second metal line pattern 95 is set as L2, L1
≤ 9 μm, L2≤7 μm, and L1-L2≤2 μm.
Specifically, first transmissive slit 961, interior shading by-pass 952, the second transmissive slit 962 and outer shading by-pass
953 width is set to a, b, c, d, wherein and 0.5 μm≤a≤1.5 μm, 0.5 μm≤b≤1.5 μm, 0.5 μm≤c≤1.5 μ
M, 0.5 μm≤d≤1.5 μm, the specific setting of a, b, c, d are related with L1 and L2 sizes and exposure parameter.
Specifically, the material of the first metal wire 11 and the second metal wire 21 is one or more in molybdenum, aluminium, copper, titanium
Alloy.
Specifically, the wall 15 is the combination of silicon oxide layer, silicon nitride layer or both.
The production method of the TFT substrate of the present invention, at the 95 both sides outer rim of the second metal line pattern of the second light shield 90
Equipped with slit 96, after 80 exposed development of photoresist layer, the both sides of photoresist design layer 85 can correspond to the slit 96 formed it is fluted
86, and the thickness of 85 both sides of photoresist design layer will reduce, when carrying out dry etching to photoresist design layer 85, due to photoresist figure
The thickness of 85 both sides of pattern layer reduces, and the width loss amount of photoresist design layer 85 can become larger, so as to cause second metal layer 20 the
Size penalty amount when secondary wet process etches becomes larger, and realizes to just reach uncomfortable section process conditions and reduces the second metal wire
The purpose of 21 width, when 21 opposite first metal wire 11 of the second metal wire being made to shift, the second metal wire 21 is at bottom of slope edge
Locate remaining risk to reduce, the vacant regulated quantity of processing procedure becomes larger.
In conclusion the production method of the TFT substrate of the present invention, superposition is made using the second optical cover process of 4Mask
The second metal wire above the first metal wire passes through the second metal line pattern two of the second light shield used in the processing procedure
Slit is set at the outer rim of side, and compared to traditional light shield is used, the slit shape can be corresponded to by being formed by the both sides of photoresist design layer
It will reduce at the thickness of groove, and photoresist design layer both sides, when carrying out dry etching to photoresist design layer, due to photoresist figure
The thickness of pattern layer both sides reduces, and under same dry etching conditions, the width loss amount of photoresist design layer can become larger, Jin Erhui
Cause size penalty amount of the second metal layer in second of wet etching to become larger, so just reached uncomfortable section process conditions and
Realize the purpose for reducing the second metal line-width, when the second metal wire being made to shift with respect to the first metal wire, the second metal wire
In bottom of slope edge, remaining risk reduces, and the vacant regulated quantity of processing procedure becomes larger.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding change and deformations are made in design, and all these change and distortions should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. a kind of production method of TFT substrate, which is characterized in that include the following steps：
One underlay substrate (10) step S1, is provided, is deposited and patterned to form the first metal wire on the underlay substrate (10)
(11), deposition forms wall (15) on first metal wire (11) and underlay substrate (10)；
Step S2, the depositing second metal layer (20) on the wall (15), light is coated in the second metal layer (20)
Resistance layer (80), provides the second light shield (90), and second light shield (90) has the second metal line pattern (95), second metal
It is equipped with slit (96) at the outer rim of line pattern (95) both sides, the photoresist layer (80) is exposed using second light shield (90)
Light, development obtain the corresponding photoresist design layer (85) being located above first metal wire (11), the photoresist design layer (85)
Both sides correspond to the slit (96) and form groove (86), and thickness of the thickness of photoresist design layer (85) both sides relative to middle part
Reduce；
Step S3, with the photoresist design layer (85) for shielding layer, the second metal layer (20) carry out wet for the first time
Method etches；
Step S4, dry etching is carried out to the photoresist design layer (85), the photoresist design layer (85) is thinned；
Step S5, be thinned after photoresist design layer (85) be shielding layer, carry out second is carried out to the second metal layer (20)
Secondary wet etching, removal photoresist design layer (85) obtain corresponding the second metal wire being located above first metal wire (11)
(21)。
2. the production method of TFT substrate as described in claim 1, which is characterized in that second metal line pattern (95) is per side
At outer rim be equipped with two parallel intervals slit (96), second metal line pattern (95) include shading main line (951) and
The set gradually from inside to outside and interior shading parallel with shading main line (951) in shading main line (951) both sides
By-pass (952) and outer shading by-pass (953)；
The slit (96) includes the first transmissive slit (961) and the second transmissive slit (962), the interior shading by-pass (952)
First transmissive slit (961), the interior shading by-pass (952) and outer shading by-pass are constituted between shading main line (951)
(953) second transmissive slit (962) is constituted between.
3. the production method of TFT substrate as claimed in claim 2, which is characterized in that first transmissive slit (961), interior
The width of shading by-pass (952), the second transmissive slit (962) and outer shading by-pass (953) is respectively a, b, c, d, wherein 0.5 μ
M≤a≤1.5 μm, 0.5 μm≤b≤1.5 μm, 0.5 μm≤c≤1.5 μm, 0.5 μm≤d≤1.5 μm.
4. the production method of TFT substrate as described in claim 1, which is characterized in that second metal line pattern (95)
Width is L2, L2≤7 μm.
5. the production method of TFT substrate as described in claim 1, which is characterized in that the step S1 further includes offer first
Light shield (40), first metal wire (11) are made by first light shield (40) and are formed, and first light shield (40) has
The first metal line pattern (41) for being correspondingly formed the first metal wire (11).
6. the production method of TFT substrate as claimed in claim 5, which is characterized in that first metal line pattern (41)
Width is L1, L1≤9 μm.
7. the production method of TFT substrate as claimed in claim 5, which is characterized in that first metal line pattern (41)
Width is L1, and the width of second metal line pattern (95) is L2, L1-L2≤2 μm.
8. the production method of TFT substrate as described in claim 1, which is characterized in that second provided in the step S2
Light shield (90), slit (96) thereon are formed by hollowing out corresponding portion on the second light shield (90).
9. the production method of TFT substrate as described in claim 1, which is characterized in that first metal wire (11) and second
The material of metal wire (21) is one or more alloys in molybdenum, aluminium, copper, titanium.
10. the production method of TFT substrate as described in claim 1, which is characterized in that the wall (15) is silica
The combination of layer, silicon nitride layer or both.
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| CN201810433816.1A CN108682654A (en) | 2018-05-08 | 2018-05-08 | The production method of TFT substrate |
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| CN201810433816.1A CN108682654A (en) | 2018-05-08 | 2018-05-08 | The production method of TFT substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990806A (en) * | 2021-10-27 | 2022-01-28 | 福建华佳彩有限公司 | Method for improving Source Line dark Line |
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| CN107799603A (en) * | 2016-09-05 | 2018-03-13 | 三星显示有限公司 | Thin-film transistor display panel and relative manufacturing process |
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|---|---|---|---|---|
| KR100922792B1 (en) * | 2003-04-28 | 2009-10-21 | 엘지디스플레이 주식회사 | Method for manufacturing array substrate of the liquid crystal display device |
| CN1912739A (en) * | 2005-08-12 | 2007-02-14 | 株式会社半导体能源研究所 | Light exposure mask and method for manufacturing semiconductor device using the same |
| CN107799603A (en) * | 2016-09-05 | 2018-03-13 | 三星显示有限公司 | Thin-film transistor display panel and relative manufacturing process |
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| CN113990806A (en) * | 2021-10-27 | 2022-01-28 | 福建华佳彩有限公司 | Method for improving Source Line dark Line |
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