CN108681165A - Display device - Google Patents
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- CN108681165A CN108681165A CN201810273851.1A CN201810273851A CN108681165A CN 108681165 A CN108681165 A CN 108681165A CN 201810273851 A CN201810273851 A CN 201810273851A CN 108681165 A CN108681165 A CN 108681165A
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- display device
- center line
- light
- display panel
- active layer
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- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000017105 transposition Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 steam Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of display devices, including：Display panel and backlight module；Display panel includes incidence surface and light-emitting surface, and backlight module is located at the side of the incidence surface of display panel；Display panel includes the first side and second side being oppositely arranged；Display panel includes array substrate, and array substrate includes thin film transistor (TFT)；Active layer includes at least first；Active layer is provided with light shield layer close to the side of incidence surface, and light shield layer includes at least the first light shielding part, and first is located to the orthographic projection of light shield layer in the first light shielding part region；The center line of first light shielding part orthographic projection on underlay substrate is the first center line, and the center line of first orthographic projection on underlay substrate is the second center line, and the first center line is located at side of second center line close to first side.By changing the first light shielding part and first relative position, solve the problems, such as that light leakage current is serious in the prior art, improves display quality.
Description
Technical field
The present invention relates to display technology fields, more particularly, to a kind of display device.
Background technology
With the development of display technology, the field of display device applications is more and more extensive, and the setting of display device is increasingly
Diversification.Existing low-temperature polysilicon silicon technology, using barrier bed is arranged below active layer, to reduce light leakage current.But with various
The appearance of the display device of change, such as head-up display device, the type display device itself have special structure design, face
Usually there are one angle between plate and backlight module, the design of traditional active layer and barrier bed can not be emitted onto on active layer
Intensity control in relatively low range, thus cause the light leakage current of head-up display device serious, related electrically result is very poor.Such as
What cope with display device development, the display performance for improving all types of display devices be this field technical problem urgently to be resolved hurrily it
One.
Invention content
In view of this, the present invention provides a kind of display devices.
To solve the above-mentioned problems, the present invention provides a kind of display devices, including：The display panel and the back of the body being oppositely arranged
Optical mode group；Display panel includes incidence surface and light-emitting surface, and backlight module is located at the side of the incidence surface of display panel；Display panel
Including the first side and second side being oppositely arranged, the vertical range of first side to backlight module is less than second side to the back of the body
The vertical range of optical mode group；Display panel includes array substrate, and array substrate includes underlay substrate and on underlay substrate
At least one thin film transistor (TFT), thin film transistor (TFT) include grid, source electrode, drain electrode and active layer；Active layer includes at least first
Portion；Active layer is provided with light shield layer close to the side of incidence surface, and light shield layer includes at least the first light shielding part, and first to light shield layer
Orthographic projection be located in the first light shielding part region；During the center line of first light shielding part orthographic projection on underlay substrate is first
The center line of heart line, first orthographic projection on underlay substrate is the second center line, and the first center line is located at the second center
Side of the line close to first side.
Compared with prior art, display device provided by the invention at least realizes following advantageous effect：
Since display panel and backlight module are not disposed in parallel, the light intensity that backlight module is sent out in order to prevent is larger
Light irradiates active layer, the relative position relation of first and the first light shielding part is arranged, specifically, the first shading
The center line of portion's orthographic projection on underlay substrate is the first center line, and the center line of first orthographic projection on underlay substrate is the
Two center lines, and the first center line is located at side of second center line close to first side.Compared with the existing technology, make first
The side of light shielding part towards first side deviates, to block the larger light of light intensity that backlight module is sent out.Improve film crystalline substance
The leakage phenomenon that body pipe occurs, improves the performance of display device, improves display quality.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Description of the drawings
It is combined in the description and the attached drawing of a part for constitution instruction shows the embodiment of the present invention, and even
With its explanation together principle for explaining the present invention.
Fig. 1 is a kind of schematic diagram for display device that the prior art provides；
Fig. 2 is a kind of diagrammatic cross-section for display device that the prior art provides；
Fig. 3 is a kind of schematic diagram of display device provided in an embodiment of the present invention；
Fig. 4 is a kind of diagrammatic cross-section of display device provided in an embodiment of the present invention；
Fig. 5 is a kind of floor map of display device provided in an embodiment of the present invention；
Fig. 6 is a kind of diagrammatic cross-section of display device provided in an embodiment of the present invention；
Fig. 7 is the floor map of another display device provided in an embodiment of the present invention；
Fig. 8 is a kind of schematic diagram of display device provided in an embodiment of the present invention；
Fig. 9 is a kind of diagrammatic cross-section of display device provided in an embodiment of the present invention；
Figure 10 is a kind of diagrammatic cross-section of display device provided in an embodiment of the present invention；
Figure 11 is a kind of floor map of display device provided in an embodiment of the present invention.
Specific implementation mode
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should be noted that：Unless in addition having
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the present invention
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, technology, method and apparatus should be considered as part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent attached drawing in a attached drawing.
Fig. 1 and Fig. 2 are referred to, Fig. 1 is the schematic diagram for the display device that the prior art provides, and Fig. 2 is that the prior art provides
Display device diagrammatic cross-section, the display device that the prior art provides, including display panel 01 and backlight module 02,
In, display panel 01 is not disposed in parallel with backlight module 02, has angle α therebetween, then perpendicular to display panel 01
02 place plane of straight line cellL and backlight module normal bluL between there is also angle α, cellL is that human eye viewing is aobvious
The direction of visual lines of showing device, bluL are backlight center line.Research staff is by the study found that work as display panel 01 and backlight mould
When the position of group 02 is relatively parallel, then the larger incident ray of light intensity within a certain angle is unable to reach active layer by shading
Region.But for the display device with angle α between the prior art display panel 01 provided and backlight module 02, centainly
The larger incident ray of light intensity in angle can reach active layer by the region of shading, cause crosstalk phenomenon serious, display dress
The display quality set is relatively low.
Research staff is by the study found that referring to FIG. 2, display panel 01 includes thin film transistor (TFT) T, thin film transistor (TFT)
T includes active layer T1 and light shield layer LS1 and grid T2, source electrode T3 and drain electrode T4.Wherein, light shield layer LS1 is for blocking backlight
The some light of module 02, the light irradiation active layer T1 for preventing light intensity larger make to generate carrier in active layer T1, cause thin
There is leakage phenomenon in film transistor.
When display panel and backlight module are arranged in parallel, backlight center line bluL ' is put down where being perpendicular to display panel
Light LI00 of face and backlight center line bluL ' angle less than or equal to β will not be irradiated to active layer T1.It is known, and the back of the body
The angle of light center line bluL ' is smaller, light light intensity is bigger.Although being more than the light of β with the angle of backlight center line bluL '
It can be irradiated to active layer T1, but since the light intensity of this some light is smaller, thus the influence for thin film transistor (TFT) is smaller.This
When, the leakage current of the thin film transistor (TFT) in display panel is smaller, and the influence to the display quality of display panel is smaller.
And in the display device that the prior art provides, when having angle α between display panel 01 and backlight module 02, the back of the body
Light center line bluL and between the straight line of 01 place plane of display panel have angle α, correspondingly, with backlight center line
The light LI0 that the angle of bluL is β will be irradiated to active layer T1, electric leakage occur to make generation carrier in active layer
Flow phenomenon, the performance for resulting in display panel decline, and reduce display quality.
In view of this, please refer to Fig.3 to Fig. 5, Fig. 3 be display device provided in an embodiment of the present invention schematic diagram, Fig. 4 is
The diagrammatic cross-section of display device provided in an embodiment of the present invention, Fig. 5 are a kind of display devices provided in an embodiment of the present invention
Floor map.A kind of display device is present embodiments provided, including：The display panel 10 and backlight module 20 being oppositely arranged；
Display panel 10 includes incidence surface s1 and light-emitting surface s2, and backlight module 20 is located at the side of the incidence surface s1 of display panel 10；
Display panel 10 includes the first side b1 that is oppositely arranged and second side b2, first side b1 to backlight module 20
Vertical range D1 be less than second side b2 to backlight module 20 vertical range D2；
Display panel 10 includes array substrate 11, and array substrate 11 includes underlay substrate 111 and is located on underlay substrate 111
At least one thin film transistor (TFT) 115, thin film transistor (TFT) 115 includes grid 1151, source electrode 1152, drain electrode 1153 and active layer
114；Active layer 114 includes at least first 1141；Active layer 114 is provided with light shield layer 112 close to the side of incidence surface s1, hides
Photosphere 112 includes at least the first light shielding part 1121, and first 1141 is located at the first light shielding part 1121 to the orthographic projection of light shield layer 112
In region；
The center line of first orthographic projection on underlay substrate 111 of light shielding part 1121 is the first center line C1, first 1141
The center line of orthographic projection is the second center line C on underlay substrate 1112, and the first center line C1Positioned at the second center line C2It leans on
The side of nearly first side b1.
In display device provided in this embodiment, there is display panel 10 display function, backlight module 20 can send out light
Line is used to provide light source to display panel 10.The light that backlight module 20 is sent out enters from 10 sides incidence surface s1 of display panel
In display panel 10, then some light can be emitted from 10 sides light-emitting surface s2 of display panel.User is using display device
When, observation 10 light-emitting surface s2 of display panel can see the information such as the word of display, image.
In display device provided in this embodiment, display panel 10 and backlight module 20 be not it is disposed in parallel, it is specific and
The vertical range of speech, first side b1 to backlight module 20 is D1, and the vertical range of second side b2 to backlight module 20 is D2,
D1 ＜ D2.
Display panel 10 includes array substrate 11, and array substrate includes thin film transistor (TFT) 115.It is set in thin film transistor (TFT) 115
It is equipped with light shield layer 112, the light that light shield layer 112 can be sent out with shield portions backlight module 20 prevents the light intensity of backlight module 20
The leakage phenomenon that larger light irradiates active layer 114, makes generation carrier in active layer 114 and occur.In this implementation, the
One 1141 and the first light shielding part 1121 are arranged in a one-to-one correspondence, and the first light shielding part 1121 is used to shut out the light for first 1141.
Since display panel 10 and backlight module 20 are not light intensity disposed in parallel, that backlight module 20 is sent out in order to prevent
Larger light irradiates active layer 114, in the present embodiment, to first 1141 and the relative position relation of the first light shielding part 1121
It is arranged, specifically, the center line of the first orthographic projection on underlay substrate 111 of light shielding part 1121 is the first center line
C1, the center line of first 1141 orthographic projection on underlay substrate 111 is the second center line C2, and the first center line C1It is located at
Second center line C2Close to the side of first side b1.Compared with the existing technology, make the first light shielding part 1121 towards first side
The side of b1 deviates, to block the larger light of light intensity that backlight module 20 is sent out.
Referring to Figure 4, in the prior art, since the relative position of light shield layer and active layer is not into line displacement, and the back of the body
The angle of light center line Lblu ' is θ1Light LI ' first 1141 can be exposed to.And in the present embodiment, make the first shading
After portion 1121 is deviated towards the side of first side b1 and the angle of backlight center line Lblu is θ1Light LI cannot expose to
First 1141, thus the first light shielding part 1121 can block the larger light of light intensity that backlight module 20 is sent out, prevent backlight
The light that the light intensity of module 20 is larger irradiates active layer 114, improves the leakage phenomenon of thin film transistor (TFT) appearance, improves aobvious
The performance for showing panel, improves display quality.
It should be noted that Fig. 5 is that array substrate is obtained to be regarded being looked up perpendicular to the side of underlay substrate 111
Figure.In order to clearly illustrate the technical solution of the present embodiment, the part film layer structure of array substrate is only illustrated in Fig. 5.
It should be noted that the display device that any embodiment of the present invention provides can also have touch function, fingerprint to know
Other functions such as other function, the present invention are not specifically limited the concrete structure of touch function.
Fig. 6 is referred to, Fig. 6 is the diagrammatic cross-section of display device provided in an embodiment of the present invention, optional real at some
It applies in example, backlight center line Lblu extends along first direction x；Angle between display panel 10 and backlight module 20 is θ2, i.e.,
The angle of the normal Lcell and backlight center line Lblu of 10 place plane of display panel are θ2；In conjunction with Fig. 4, perpendicular to substrate
In the plane of substrate 111, the company of first 1141 and first light shielding part 1121 between the edge close to first side b1
The angle of line line and first direction x is θ1, first 1141 in a second direction y width be L1, the first light shielding part 1121 is along
The width in two directions is L2, second direction y is located at plane where display panel；First center line C1With the second center line C2Between
It is d, then d and L there are spacing0、L1、L2、θ1、θ2Between relationship be：Wherein, L0It is
One light shielding part 1121 and active layer 114 first 1141 are in the spacing on the direction of array substrate 11.In order to clear
Illustrate the calculation formula of the present embodiment, auxiliary line v1 is illustrated in Fig. 6, auxiliary line v1 prolongs along the normal direction of display panel 10
It stretches and extends past first 1141 close to the edge of first side b1；Regard the first light shielding part 1121 as approximate one section of line segment,
A part of v2, the auxiliary line v1 and line line form right angle triangles of first light shielding part 1121, there are one right angled triangle tools
Acute angle thetav, and θv=θ1+θ2.It is known, v1=L0,
According to trigonometric function formula,By θv=θ1+θ2, v1=L0、It substitutes into public
Formula can obtain
Due to L0、L1、L2、θ1、θ2It is known constant, thus the numerical value of d can be obtained by calculating, the present embodiment carries
The display device of confession can calculate and obtain the first center line C1With the second center line C2Between spacing d, so as to so that first
Light shielding part 1121 more effectively blocks the larger light of part light intensity of backlight module.Specifically, the light being blocked is,
It is less than or equal to θ with the angle of backlight center line Lblu1Light.Wherein, θ1Concrete numerical value can be with according to display device specific
Setting requirements are configured.
It should be noted that in order to clearly illustrate the technical solution of the present embodiment, thin film transistor (TFT) is only illustrated in Fig. 6
Part-structure, specifically, only illustrating the first light shielding part 1121 and first 1141 in Fig. 6.
In some optional embodiments, Fig. 7 is referred to, Fig. 7 is the plane of display device provided in an embodiment of the present invention
Schematic diagram, active layer 114 further include second 1142 and third portion 1143, and light shield layer 112 further includes the second light shielding part 1122；The
Two 1142, third portion 1143 and first composition U-shaped structure, second 1142 is located at second to the orthographic projection of light shield layer 112
In 1122 region of light shielding part, wherein the setting of second 1142 and the second light shielding part 1122 can refer to first 1141
With the set-up mode of the first light shielding part 1121.Specifically, the second light shielding part 1122 center line of orthographic projection on underlay substrate is
Third centerline C3, the center line of second 1142 orthographic projection on underlay substrate is the 4th center line C4, and third centerline
C3Positioned at the 4th center line C4Close to the side of first side b1.In some optional embodiments, the both ends point in third portion 1143
It is not connect with first 1141 one end and second 1142 one end；First 1141 the other end is connect with source electrode 1152,
Second 1142 the other end is connect with drain electrode 1153.In the present embodiment, make the second light shielding part 1122 towards first side b1's
Side deviates, to block the larger light of light intensity that backlight module 20 is sent out.It is understood that second 1142 and second hides
The relative position relation in light portion 1122 can refer in the above embodiment of the present invention for first 1141 and the first light shielding part
1121 explanation.Optionally, the shape of the second light shielding part 1122 and the first light shielding part 1121, size all same, first 1141
Shape, size all same with second 1142.
It should be noted that active layer provided in an embodiment of the present invention is U-shaped structure, thin film transistor (TFT) is U-tube, still
The embodiment of the present invention is not specifically limited the concrete structure of active layer 114.It is understood that other in the present invention are optional
Embodiment in, thin film transistor (TFT) be other kinds of transistor.
In the following, the present invention is herein only with θ1=65 °, θ2=19 °, L1=2.5um, L2=7.0um, L0For=0.303um
It illustrates.For example, in Fig. 8 and display device shown in Fig. 9, Fig. 8 is the signal of display device provided in an embodiment of the present invention
Figure, Fig. 9 is the diagrammatic cross-section of display device provided in an embodiment of the present invention, the folder between display panel 10 and backlight module 20
Angle needs to be set as 19 °.Also, the light intensity of the light irradiated along the directions backlight center line Lblu is denoted as Lum (max), when
When exposing to the light intensity of active layer more than 20%*Lum (max), thin film transistor (TFT) can be caused to generate larger leakage current.Due to
The angle of backlight center line Lblu is smaller, light light intensity is bigger, can be obtained by calculating and the folder of backlight center line Lblu
When angle is less than or equal to 65 °, the light intensity of the light of the backlight module is more than 20%*Lum (max).Therefore, by θ2It is set as 65 °.
Fig. 8 and Fig. 9 are referred to, when the angle between display panel 10 and backlight module 20 is 19 °, perpendicular to display surface
Angle between the straight line Lcell and backlight center line Lblu of plate 10 is also 19 °.Using traditional display device design method,
Active layer 114 has close to 1/4 can be irradiated to by lightproof area by the light with the angle of backlight center line Lblu less than 65 °.
And the method for using light shield layer 112 and active layer 114 dislocation design in the embodiment of the present invention, by light shield layer 114 to first side
B1 offset distance d, distance d should be greater than 0.63 μm and be less than 2.5 μm (i.e. more than 1/4 active layer, 114 width and no more than active
The edge of layer 114), the light with the angle of backlight center line Lblu less than 65 ° will not expose to active layer 114, then can have
Effect reduces the case where light leakage current, carries high display quality.
Figure 10 is referred to, Figure 10 is the diagrammatic cross-section of display device provided in an embodiment of the present invention, optionally, in this hair
In the display device that bright any of the above-described embodiment provides, a buffer layer 113 is at least set between active layer 114 and light shield layer 112.
Optionally, the material of buffer layer 113 includes inorganic matter, such as including silicon nitride and/or silica, and buffer layer 113 has good
Compactness, can stop the substances such as steam, oxygen and the impurity in air invade display panel, display panel is caused to damage
It is bad.
Optionally, in the display device that any of the above-described embodiment of the present invention provides, active layer 114 includes non-crystalline silicon and more
At least one of crystal silicon.
It should be noted that active layer 114 provided in an embodiment of the present invention includes non-crystalline silicon and polysilicon, but it is of the invention
Embodiment is not specifically limited the specific material of active layer 114, and other materials also can be selected.
Optionally, in the display device that any of the above-described embodiment of the present invention provides, active layer 114 includes low-temperature polysilicon
Silicon.
Optionally, in the display device that any of the above-described embodiment of the present invention provides, the material of light shield layer 112 includes gold
Belong to.
It should be noted that light shield layer 112 provided in an embodiment of the present invention includes metal, but the embodiment of the present invention is to hiding
The specific material of photosphere 112 is not specifically limited, and other materials also can be selected.
Optionally, in the display device that any of the above-described embodiment of the present invention provides, thin film transistor (TFT) 115 is double grid knot
Structure, referring to FIG. 7, U-shaped structure thin film transistor (TFT) shown in Fig. 7 is double-gate structure.
Optionally, in the display device that any of the above-described embodiment of the present invention provides, thin film transistor (TFT) 115 is top-gated knot
Structure.Referring to FIG. 10, thin film transistor (TFT) shown in Fig. 10 is top gate structure, as, it is separate that grid 1151 is located at active layer 114
The side of underlay substrate.
It should be noted that the embodiment of the present invention is not specifically limited the concrete structure of thin film transistor (TFT) 115, it is optional
, thin film transistor (TFT) can be bottom grating structure, and as, grid is located at active layer close to the side of underlay substrate.
As shown in figure 11, Figure 11 is the floor map of display device provided in an embodiment of the present invention, optionally, in this hair
In the display device that bright any of the above-described embodiment provides, display panel 10 further includes multi-strip scanning line 30 and multiple data lines
40, scan line 30 and 40 transposition insulator of data line limit the region P where multiple pixels.
Optionally, in conjunction with Figure 10, in the display device that any of the above-described embodiment of the present invention provides, scan line 30 and film
The grid 1151 of transistor 115 is electrically connected, and data line 40 is electrically connected with the source electrode 1152 of thin film transistor (TFT) 115.
It is understood that display device provided in an embodiment of the present invention, can be mobile phone, computer, TV, car-mounted display
Other display devices with display function such as device, the present invention are not specifically limited this.
By above-described embodiment it is found that display device provided by the invention, at least realizes following advantageous effect：
Since display panel and backlight module are not disposed in parallel, the light intensity that backlight module is sent out in order to prevent is larger
Light irradiates active layer, the relative position relation of first and the first light shielding part is arranged, specifically, the first shading
The center line of portion's orthographic projection on underlay substrate is the first center line, and the center line of first orthographic projection on underlay substrate is the
Two center lines, and the first center line is located at side of second center line close to first side.Compared with the existing technology, make first
The side of light shielding part 111 towards first side deviates, to block the larger light of light intensity that backlight module is sent out.Improve film
The leakage phenomenon that transistor occurs, improves the performance of display device, improves display quality.
Although some specific embodiments of the present invention are described in detail by example, the skill of this field
Art personnel it should be understood that example above merely to illustrating, the range being not intended to be limiting of the invention.The skill of this field
Art personnel are it should be understood that can without departing from the scope and spirit of the present invention modify to above example.This hair
Bright range is defined by the following claims.
Claims (12)
1. a kind of display device, which is characterized in that including：
The display panel and backlight module being oppositely arranged；The display panel includes incidence surface and light-emitting surface, the backlight module
Positioned at the side of the incidence surface of the display panel；
The display panel includes the first side and second side being oppositely arranged, the first side to the backlight module
Vertical range is less than the second side to the vertical range of the backlight module；
The display panel includes array substrate, the array substrate include underlay substrate and on the underlay substrate extremely
A few thin film transistor (TFT), the thin film transistor (TFT) includes grid, source electrode, drain electrode and active layer；
The active layer includes at least first；
The active layer is provided with light shield layer close to the side of the incidence surface, and the light shield layer includes at least the first light shielding part,
Described first is located to the orthographic projection of the light shield layer in first light shielding part region；
The center line of first light shielding part orthographic projection on the underlay substrate is the first center line, with described first to institute
The center line for stating orthographic projection on underlay substrate is the second center line, and first center line is located at second center line and leans on
The side of the nearly first side.
2. a kind of display device according to claim 1, which is characterized in that
Angle between the display panel and the backlight module is θ2；The normal of plane is along first where the backlight module
Direction extends；In the plane perpendicular to the underlay substrate, described first and first light shielding part are close to described the
The angle of line and the first direction between the edge of a side is θ1；
The distance between first center line and second center line are d, and first width in a second direction is
L1, first light shielding part is L along the width of the second direction2；Wherein, the second direction is located at the display panel institute
In plane；
The d and L1、L2、θ1、θ2Between relationship be：Wherein, L0For first shading
Portion and the active layer first are in the spacing on the direction of the array substrate.
3. a kind of display device according to claim 1, which is characterized in that the active layer further includes second and third
Portion, the light shield layer further include the second light shielding part；Described second, third portion and described first composition U-shaped structure, described the
Two are located to the orthographic projection of the light shield layer in second light shielding part region.
4. a kind of display device according to claim 3, which is characterized in that the both ends in the third portion are respectively with described
One one end is connected with described second one end；Described first the other end is connect with the source electrode, described second
The other end is connected with the drain electrode.
5. a kind of display device according to claim 1, which is characterized in that between the active layer and the light shield layer extremely
One buffer layer is set less.
6. a kind of display device according to claim 1, which is characterized in that the active layer includes non-crystalline silicon and polysilicon
At least one of.
7. a kind of display device according to claim 6, which is characterized in that the active layer includes low temperature polycrystalline silicon.
8. a kind of display device according to claim 1, which is characterized in that the material of the light shield layer includes metal.
9. a kind of display device according to claim 1, which is characterized in that the thin film transistor (TFT) is double-gate structure.
10. a kind of display device according to claim 1, which is characterized in that the thin film transistor (TFT) is top gate structure.
11. a kind of display device according to claim 1, which is characterized in that the display panel further includes multi-strip scanning
Line and multiple data lines, the scan line and the data line transposition insulator limit the region where multiple pixels.
12. a kind of display device according to claim 11, which is characterized in that the grid of the scan line and thin film transistor (TFT)
Pole is electrically connected, and the data line is electrically connected with the source electrode of thin film transistor (TFT).
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| CN108681165B (en) | 2021-04-02 |
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