CN108677247A - A method of improving Nd-doped yttrium vanadate absorption of crystal - Google Patents
A method of improving Nd-doped yttrium vanadate absorption of crystal Download PDFInfo
- Publication number
- CN108677247A CN108677247A CN201810477596.2A CN201810477596A CN108677247A CN 108677247 A CN108677247 A CN 108677247A CN 201810477596 A CN201810477596 A CN 201810477596A CN 108677247 A CN108677247 A CN 108677247A
- Authority
- CN
- China
- Prior art keywords
- degree
- crystal
- absorption
- doped yttrium
- hours
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Abstract
The invention discloses a kind of methods improving Nd-doped yttrium vanadate absorption of crystal, Nd-doped yttrium vanadate crystal is placed in annealing furnace, by designed cycle of annealing, it anneals, it is filled with a certain proportion of oxygen in the process, absorption value 15% 30% can be reduced by the crystal annealed outside stove by eventually reducing the absorption value of Nd-doped yttrium vanadate crystal.
Description
Technical field
The present invention relates to a kind of methods improving Nd-doped yttrium vanadate absorption of crystal.
Background technology
Nd-doped yttrium vanadate crystal is a kind of laser crystal of function admirable, is suitable for manufacturing in laser diode-pumped be especially
The laser of low-power.With the rapid development of green laser and blue laser, Nd-doped yttrium vanadate crystal is in laser communications, colour
The numerous areas such as printing, optical disc, laser printing and laser ranging are applied, and require also increasingly the absorption of crystal
Height, low absorption, the Nd-doped yttrium vanadate crystal that can effectively improve go out the service life of work(power and crystal.
Invention content
In order to solve the above technical problems, the present invention provides a kind of methods improving Nd-doped yttrium vanadate absorption of crystal, to reach
To purpose.
In order to achieve the above object, the technical solution adopted in the present invention is as follows：
Crystal is orderly put into annealing furnace, cycle of annealing is set：Room temperature starts to warm up 6 hours to 500 degree, then heats up 5 small
When to 700 degree, then heat up 10 hours to 950 degree, start to be oxygenated when temperature reaches 950 degree, oxygenation flow velocity is 0.5L/min, then
Heating 10 hours to 1100 degree, constant temperature 20 hours, 1100 degree cool down 10 hours to 900 degree, then cool down 10 hours to 700 degree, when
Oxygenation is closed when 700 degree of temperature, powered-down source is cooled to room temperature automatically, takes out crystal.
Specific implementation mode
It is respectively 650,740,587,619,518 to be put into annealing furnace by 5 absorption values, cycle of annealing operates as follows：
Crystal is orderly put into annealing furnace, cycle of annealing is set：Room temperature starts to warm up 6 hours to 500 degree, then heats up 5 small
When to 700 degree, then heat up 10 hours to 950 degree, start to be oxygenated when temperature reaches 950 degree, oxygenation flow velocity is 0.5L/min, then
Heating 10 hours to 1100 degree, constant temperature 20 hours, 1100 degree cool down 10 hours to 900 degree, then cool down 10 hours to 700 degree, when
Oxygenation is closed when 700 degree of temperature, powered-down source is cooled to room temperature automatically, takes out crystal.Absorption of crystal value difference after treatment
For：510、580、530、451、379.
Claims (5)
1. a kind of method improving Nd-doped yttrium vanadate absorption of crystal, it is characterised in that take crystal to be put into annealing furnace, set liter
Cooling process, heating, starts to be oxygenated when being during which warming up to 950 degree, reaches set temperature, and constant temperature for a period of time, then is cooled to room
Temperature.
2. a kind of method improving Nd-doped yttrium vanadate absorption of crystal according to claim 1, it is characterised in that：Temperature program
For：Room temperature starts to warm up 6 hours to 500 degree, then heats up 5 hours to 700 degree, then heats up 10 hours to 950 degree, then heats up 10 small
When to 1100 degree, constant temperature 20 hours.
3. a kind of method improving Nd-doped yttrium vanadate absorption of crystal according to claim 1, it is characterised in that：Temperature exists
1100 degree of constant temperature 20 as a child start cooling process, and 1100 degree cool down 10 hours to 900 degree, then cool down 10 hours to 700 degree, close
Power supply is cooled to room temperature automatically.
4. a kind of method improving Nd-doped yttrium vanadate absorption of crystal according to claim 1, it is characterised in that；When being warming up to
Start to be oxygenated at 950 degree, oxygenation flow velocity is 0.5L/min.
5. annealing outside a kind of Nd-doped yttrium vanadate crystal oven according to claim 1 reduces the absorption of crystal, it is characterised in that：
When cooling to 700 degree, oxygenation is closed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477596.2A CN108677247A (en) | 2018-05-18 | 2018-05-18 | A method of improving Nd-doped yttrium vanadate absorption of crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477596.2A CN108677247A (en) | 2018-05-18 | 2018-05-18 | A method of improving Nd-doped yttrium vanadate absorption of crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108677247A true CN108677247A (en) | 2018-10-19 |
Family
ID=63806725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810477596.2A Pending CN108677247A (en) | 2018-05-18 | 2018-05-18 | A method of improving Nd-doped yttrium vanadate absorption of crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108677247A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08151298A (en) * | 1994-11-24 | 1996-06-11 | Nec Corp | Method for heat-treating solid laser crystal |
| CN1143124A (en) * | 1995-08-15 | 1997-02-19 | 中国科学院物理研究所 | Ytterbium mixed yttrium vanadate laser crystal and its preparing method |
| CN1393579A (en) * | 2001-06-26 | 2003-01-29 | 上海佳科光电技术有限公司 | Process for preparing yttrium vanadate crystal |
| CN101603206A (en) * | 2009-07-07 | 2009-12-16 | 福州高意通讯有限公司 | Cr 3+, Nd 3+: YVO 4Crystal and Cr 4+, Nd 3+: YVO 4The crystalline preparation method |
| CN102242399A (en) * | 2010-05-12 | 2011-11-16 | 上海伟钊光学科技有限公司 | Annealing method of yttrium vanadate crystal |
| CN103266346A (en) * | 2013-05-22 | 2013-08-28 | 嘉兴和讯光电科技有限公司 | Growing equipment for growing YVO4 (Yttrium Vanadate) crystal with drawing method and growing method based on same |
| CN104947196A (en) * | 2015-07-24 | 2015-09-30 | 福州恒光光电有限公司 | Annealing method for growth of YVO4 crystals |
-
2018
- 2018-05-18 CN CN201810477596.2A patent/CN108677247A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08151298A (en) * | 1994-11-24 | 1996-06-11 | Nec Corp | Method for heat-treating solid laser crystal |
| CN1143124A (en) * | 1995-08-15 | 1997-02-19 | 中国科学院物理研究所 | Ytterbium mixed yttrium vanadate laser crystal and its preparing method |
| CN1393579A (en) * | 2001-06-26 | 2003-01-29 | 上海佳科光电技术有限公司 | Process for preparing yttrium vanadate crystal |
| CN101603206A (en) * | 2009-07-07 | 2009-12-16 | 福州高意通讯有限公司 | Cr 3+, Nd 3+: YVO 4Crystal and Cr 4+, Nd 3+: YVO 4The crystalline preparation method |
| CN102242399A (en) * | 2010-05-12 | 2011-11-16 | 上海伟钊光学科技有限公司 | Annealing method of yttrium vanadate crystal |
| CN103266346A (en) * | 2013-05-22 | 2013-08-28 | 嘉兴和讯光电科技有限公司 | Growing equipment for growing YVO4 (Yttrium Vanadate) crystal with drawing method and growing method based on same |
| CN104947196A (en) * | 2015-07-24 | 2015-09-30 | 福州恒光光电有限公司 | Annealing method for growth of YVO4 crystals |
Non-Patent Citations (2)
| Title |
|---|
| GUOCHUN ZHANG，ET AL.: "Heat treatment and optical absorption studies on Nd:YVO4 crystal", 《JOURNAL OF CRYSTAL GROWTH》 * |
| ZHENG HONG，ET AL.: "Nd:YVO4 crystal growth by the floating zone method", 《JOURNAL OF CRYSTAL GROWTH》 * |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181019 |
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| WD01 | Invention patent application deemed withdrawn after publication |