CN108666196A - Charged particle beam apparatus and sample processing method - Google Patents
Charged particle beam apparatus and sample processing method Download PDFInfo
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- CN108666196A CN108666196A CN201810239287.1A CN201810239287A CN108666196A CN 108666196 A CN108666196 A CN 108666196A CN 201810239287 A CN201810239287 A CN 201810239287A CN 108666196 A CN108666196 A CN 108666196A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- Sampling And Sample Adjustment (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The present invention provides charged particle beam apparatus and sample processing method, processing terminal when can equably irradiate charged particle beam to the entire tiny sample piece for the thickness for reducing sample and can clearly grasp processing.The charged particle beam apparatus irradiates charged particle beam towards sample, tiny sample piece is made, which is characterized in that the charged particle beam apparatus has：Charged particle beam lens barrel can irradiate charged particle beam towards the sample；Sample chamber stores the charged particle beam lens barrel；And coupon holder, it can keep the sample, when forming the tiny sample piece of thickness in a part of region for reducing the sample by the charged particle beam, the part adjacent with the lightening holes of the tiny sample piece is formed relative to the inclined rake of the lightening holes.
Description
Technical field
The present invention relates to for using the charged particle beam apparatus of the processing of charged particle beam progress sample and using
The sample processing method of charged particle beam.
Background technology
For example, as the method analyzed the internal structure of the samples such as semiconductor equipment or carry out stereovision
One kind, there is known following section process observation method：Using equipped with charged particle beam (Focused Ion Beam：
FIB) lens barrel and electron beam (Electron Beam；EB) the charged particle beam set composite of lens barrel carries out the section based on FIB
Formation processes and passes through scanning electron microscope (Scanning Electron Microscope：SEM its section (example) is observed
As referring to patent document 1).
The section processes observation method, and there is known form processing and based on SEM's by repeating the section based on FIB
Cross-section is come the method that builds 3-D view.It in the method, can be according to the stereo image rebuild from various sides
To the three-dimensional body for analyzing object sample in detail.Also, it is such a with the arbitrary section for capableing of reproduced objects sample
The unexistent advantage of other methods.
On the other hand, there are the limit in the observation of high magnification (high-resolution) in SEM principles, in addition, the letter obtained
Breath is also defined near specimen surface.Therefore, also there is known following observation methods：In order to carry out high-resolution under more high magnification
The observation of rate, the sample to being processed into film-form make the transmission electron microscope (Transmission that electronic transmission is crossed
Electron Microscopy：TEM).Filming used in such observation based on TEM fine sample (with
Under, sometimes referred to as tiny sample piece.) making in, it is also effective that section as described above based on FIB, which forms processing,.
In the past, in the tiny sample piece being made used in the observation based on TEM, pass through the thickness direction pair along sample
Such as fore-end of sample irradiates charged particle beam, reduces the thickness of sample and makes its filming, tiny sample piece is made.
For example, in sample film made of making through-thickness that multiple equipment to be layered in semiconductor substrate, one
Side irradiation charged particle beam observes the SEM image in processing section on one side, and the quantity of the equipment to exposing in processing section is counted
Number, thus grasps desired processing terminal.
On the other hand, in order to mitigate the irradiation along charged particle beam generated by using the processing of charged particle beam
The processing candy strip (curtain effect (curtain effect)) in direction, can also be by inclining from the thickness direction relative to sample
Charged particle beam is irradiated to carry out (referring for example to patent document 2) in oblique direction.
Patent document 1：Japanese Unexamined Patent Publication 2008-270073 bulletins
Patent document 2：Japanese Unexamined Patent Publication 9-186210 bulletins
However, in the processing method (filming method) of above-mentioned sample, due to the part quilt of the filming in sample
Etching and processing, the part adjacent with the part are not etched processing, therefore will produce with the scale of 90 ° of bucklings.Moreover, when in order to
Cope with curtain effect as described above and when the inclined direction irradiation charged particle beam of machined surface from the part relative to sheet,
Above-mentioned adjacent part covers charged particle beam, thus will produce charged particle beam irradiation less than shadow region.Therefore, it is necessary to
Consider charged particle beam irradiation less than shadow region determine working width, thus it is big to need to compare desired working width
The range of work irradiates charged particle beam.Therefore, the process time of sample is elongated, in addition, it is also possible to can not produce desired
The tiny sample piece of shape.
In addition, when sample made of to the through-thickness stacking multiple equipment in semiconductor substrate carries out filming,
In order to grasp processing terminal and the quantity of the equipment to exposing by processing count when, it is possible in above-mentioned shadow region
The contrast of machined surface reduces under the influence of domain, can not accurately be counted to the quantity of equipment, to can not accurately grasp
Process terminal.
Invention content
The present invention is exactly to complete in view of the foregoing, and its purpose is to provide a kind of charged particle beam apparatus and examinations
Sample processing method, the charged particle beam apparatus can be to the entire tiny sample piece equably illumination bands for the thickness for reducing sample
Electrochondria beamlet and processing terminal when can clearly grasp processing.
In order to solve the above problems, provided in the mode of present embodiment following such charged particle beam apparatus,
Sample processing method.
That is, the charged particle beam apparatus of the present invention is directed towards sample irradiation charged particle beam, the band of tiny sample piece is made
Charged particle bundle device, which is characterized in that the charged particle beam apparatus has：Charged particle beam lens barrel, can be towards the examination
Sample irradiates charged particle beam；Sample chamber stores the charged particle beam lens barrel；And coupon holder, institute can be kept
Sample is stated, in the tiny sample piece for the thickness for forming a part of region for reducing the sample by the charged particle beam
When, the part adjacent with the lightening holes of the tiny sample piece is formed relative to the inclined rake of the lightening holes.
Charged particle beam apparatus according to the present invention forms phase by the part adjacent with the lightening holes of tiny sample piece
For the inclined rake of the lightening holes, the cross sectional shape for the equipment exposed in rake is than being in straight with the extending direction of equipment
The cross sectional shape bigger in the section at angle and more brightly see, therefore accurately the quantity of equipment can be counted.As a result,
It can to easily and reliably determine processing terminal of the charged particle beam to sample.
In addition, it is a feature of the present invention that the charged particle beam apparatus is in a manner of parallel relative to the rake
Irradiate ar-ion beam.
The sample processing method of the present invention is directed towards sample irradiation charged particle beam, and reduce the sample one is made
The sample processing method of the tiny sample piece of subregional thickness, which is characterized in that the sample processing method has rake shape
At process, in the rake formation process, by the irradiation of the charged particle beam, the thickness direction along the sample is overlapped
Multiple removal regions are formed, the removal region has along the defined processing thickness of the thickness direction and edge and the thickness
The working width of the vertical width direction in direction reduces the working width to the stage when being overlapped the removal region every time, by
This is formed in the part adjacent with the lightening holes of tiny sample piece relative to the inclined rake of the lightening holes.
Sample processing method according to the present invention, due to can be in the part shape adjacent with the lightening holes of tiny sample piece
At relative to the inclined rake of the lightening holes, in subsequent handling, the electrification used in processing of the irradiation with sample
When the reprocessing beam of the different illumination angle of the particle beams, it can eliminate and not irradiate ar-ion beam to the root portion of tiny sample piece
Shadow region, so as to reliably irradiate ar-ion beam to the whole region of tiny sample piece.It is small thereby, it is possible to be formed in
It processes candy strip in the whole region of coupons to be mitigated, so as to obtain the tiny sample piece of distinct observation picture.
In addition, it is a feature of the present invention that the processing in each removal region in the rake formation process is thick
Degree and the working width be the rake obtained with reference to scanning electron microscope SEM image and determination.
In addition, it is a feature of the present invention that the sample is to be overlapped multiple bury along the thickness direction in the inside of base material
If layer and formed.In the rake formation process, using the SEM image to burying described in exposing in the rake
If the quantity of layer is counted, to determine processing terminal.
The sample processing method is characterized in that, in the rake formation process, makes the lightening holes and work
It is mutually tilted in the range of 10 ° less than 90 ° for the rake of the part adjacent with the lightening holes.
In addition, it is a feature of the present invention that also there is the sample processing method argon beam exposure process, the argon beam to shine
It penetrates in process, irradiates ar-ion beam in a manner of parallel relative to the rake towards the tiny sample piece.
It can be to the entire tiny sample piece equably illumination bands for the thickness for reducing sample in accordance with the invention it is possible to provide
The charged particle beam apparatus and sample processing method of electrochondria beamlet and processing terminal when can clearly grasp processing.
Description of the drawings
Fig. 1 is the structure chart of the charged particle beam apparatus of embodiments of the present invention.
Fig. 2 be the stage the definition graph of sample processing method is shown.
Fig. 3 be the stage the definition graph of sample processing method is shown.
Fig. 4 is another definition graph for showing sample processing method.
Label declaration
10：Charged particle beam apparatus；11：Sample chamber；12：Microscope carrier (sample table)；13：Microscope carrier driving mechanism；14：Assemble from
Beamlet illuminating optical system (charged particle beam irradiation optical system)；15：Electron beam illuminating optical system (charged particle beam irradiation
Optical system)；16：Detector；17：Gas offer portion；18：Gas ion beam illuminating optical system (charged particle beam irradiation light
System)；19a：Needle；19b：Needle drive mechanism；20：Absorb current detector；21：Display device；22：Computer；23：Input
Equipment；33：Sample table；34：Columnar part；C：Rake；P：Coupon holder；Q：Tiny sample piece；R：Secondary Charged Particle；S：
Coupons；V：Sample.
Specific implementation mode
Hereinafter, with reference to attached drawing charged particle beam apparatus as an embodiment of the present invention and having used the electrification
The sample processing method of particle beam apparatus illustrates.In addition, each embodiment as shown below is to send out in order to better understand
Bright purport and be concretely demonstrated, as long as no specifying, just do not limit the present invention.In addition, for ease of understanding
The feature of the present invention will show the attached drawing used in the following description sometimes for facilitating as the amplification of the part of mian part
Go out, dimension scale of each integral part etc. is not necessarily identical as reality.
Fig. 1 is the schematic structural diagram for the charged particle beam apparatus for showing embodiments of the present invention.
As shown in Figure 1, the charged particle beam apparatus 10 of embodiments of the present invention has：Sample chamber 11, can will in
Portion is maintained vacuum state；Microscope carrier 12, can be by the sample V of bulk (bulk) and coupons branch for keeping coupons S
Frame P is fixed on the inside of sample chamber 11；And microscope carrier driving mechanism 13, drive microscope carrier 12.
Charged particle beam apparatus 10 has into the defined irradiation area (i.e. scanning range) of the inside of sample chamber 11
Irradiation object irradiates the converging ion beam illuminating optical system 14 of charged particle beam such as converging ion beam (FIB).Charged particle
Bundle device 10 has the electronics of the irradiation object irradiating electron beam (EB) into the defined irradiation area of the inside of sample chamber 11
Beam illuminating optical system 15.Charged particle beam apparatus 10, which has, detects the irradiation for passing through charged particle beam or electron beam from irradiation pair
As the detector 16 of Secondary Charged Particle (secondary electron, secondary ion) R of generation.
Charged particle beam apparatus 10 has the irradiation object irradiation into the defined irradiation area of the inside of sample chamber 11
The gas ion beam optics system 18 of gas ion beam (GB).
These converging ion beam illuminating optical systems 14, electron beam illuminating optical system 15 and gas ion beam optics system
System 18, which is configured to respective beam exposure axis, to intersect at 1 point of the essence on microscope carrier 12.That is, overlooking sample from side
When room 11, converging ion beam optical system 14 is configured along vertical direction, electron beam illuminating optical system 15 and gas ion beam light
System 18 is respectively along the direction configuration for having tilted such as 45 ° relative to vertical direction.Configuration layout in this way, from side
When sample chamber 11 is overlooked in face, the beam exposure axis of gas ion beam (GB) shines for instance in from electron beam illuminating optical system 15
The direction that the beam exposure axis for the electron beam (EB) penetrated intersects vertically.
Charged particle beam apparatus 10 has the gas offer portion 17 that gas G is provided to the surface of irradiation object.Gas provides
The nozzle 17a etc. that the specifically outer diameter of portion 17 is 200 μm or so.Charged particle beam apparatus 10 has to the surface of irradiation object
The gas offer portion 17 of gas G is provided.The nozzle 17a etc. that the specifically outer diameter of gas offer portion 17 is 200 μm or so.
Charged particle beam apparatus 10 has：Coupons dislocation unit 19, by being taken out from the sample V being fixed on microscope carrier 12
Coupons S keeps coupons S and is displaced to the needle 19a on coupon holder P and driving needle 19a conveying coupons S
Needle drive mechanism 19b constitute；And current detector 20 is absorbed, detection flows into the inflow electricity of the charged particle beam of needle 19a
It flows (also referred to as absorbing electric current), and inflow current signal is sent to computer and carries out image conversion.
Charged particle beam apparatus 10 has the image data etc. for showing the Secondary Charged Particle R detected based on detector 16
Display device 21, computer 22, input equipment 23.
In addition, the irradiation object of converging ion beam illuminating optical system 14 and electron beam illuminating optical system 15 is integrally fixed at
Sample V, coupons S on microscope carrier 12 and needle 19a, the coupon holder P etc. being present in irradiation area.
Charged particle beam apparatus 10 can be shone by the surface of irradiation object while scanning charged particle beam
The image conversion penetrating to execute illuminated portion, the various processing (excavate, finishing (trimming) processing etc.) based on sputtering, deposition film
The formation etc. of (deposited film).Charged particle beam apparatus 10 is able to carry out from sample V and cuts out coupons S, from what is cut out
Coupons S forms the tiny sample piece Q used in the observation based on TEM (with reference to Fig. 3：Such as sheet metal specimens, needle-shaped sample
Deng), the processing of analysis coupons that utilizes of electron beam.
Charged particle beam apparatus 10 can make such as fore-end film for the coupons S being displaced on coupon holder P
Change the desired thickness (such as 5~100nm etc.) to the viewed in transmittance suitable for transmission electron microscope to obtain observation
Tiny sample piece Q.Charged particle beam apparatus 10 can be by scanning on one side to the surface of the irradiation objects such as coupons S and needle 19a
Charged particle beam or electron beam are irradiated the observation on the surface to execute irradiation object on one side.
Absorbing current detector 20 has preamplifier, is amplified to the inflow current of needle and is sent to computer
22.It, can according to the synchronous signal of the needle inflow current and the scanning of charged particle beam that are detected with absorption current detector 20
The absorption current image that aciculiform shape is shown in display device 21, so as to carry out the determination of aciculiform shape and front position.
Sample chamber 11 is configured to be exhausted until making internal to be desired true by exhaust apparatus (illustration omitted)
Until dummy status and it is able to maintain that desired vacuum state.
Microscope carrier 12 keeps sample V.Microscope carrier 12 has the holder fixed station 12a kept to coupon holder P.
The construction that can carry multiple coupon holder P may be used in holder fixed station 12a.
Microscope carrier driving mechanism 13 is accommodated in the inside of sample chamber 11 with the state being connect with microscope carrier 12, according to from computer 22
The control signal of output makes microscope carrier 12 relative to defined axial displacement.Microscope carrier driving mechanism 13 at least have make microscope carrier 12 along with water
Plane is parallel and orthogonal X-axis and Y-axis and the vertical direction vertical with X-axis and Y-axis on Z axis be moved parallel to
Mobile mechanism 13a.Microscope carrier driving mechanism 13 have make microscope carrier 12 around X-axis or the inclined leaning device 13b of Y-axis and make microscope carrier 12 around
The rotating mechanism 13c of Z axis rotation.
Converging ion beam illuminating optical system 14 is fixed on sample chamber 11 as follows：It, will in the inside of sample chamber 11
At position above the vertical direction of microscope carrier 12 of the beam injection part (illustration omitted) in irradiation area towards microscope carrier 12 and
Optical axis is parallel with vertical direction.Thereby, it is possible to the sample V, the coupons S that are placed on microscope carrier 12 and be present in irradiation
The irradiation objects such as the needle 19a in region irradiate downward charged particle beam above vertical direction.
In addition, charged particle beam apparatus 10 can also have other ion beam illuminating optical systems and replace as described above
Converging ion beam illuminating optical system 14.Ion beam illuminating optical system is not limited to form the light of convergent beam as described above
System.Ion beam illuminating optical system for example can also be the template by the way that the opening with sizing is arranged in optical system
Mask is to form the ion beam irradiation light of the projection type of the shaped beam of the opening shape of template mask (stencil mask)
System.According to the ion beam illuminating optical system of such projection type, can accurately be formed and the periphery of coupons S
The shaped beam of the comparable shape of machining area, so as to shorten process time.
Converging ion beam illuminating optical system 14 has the ion source 14a for generating ion and makes from ion source 14a extractions
Ion convergent and the ion-optic system 14b of deflection.Ion source 14a and ion-optic system 14b is according to defeated from computer 22
The control signal gone out is controlled, and the irradiation position of charged particle beam and irradiation condition etc. are controlled by computer 22.
Ion source 14a is, for example, the gold metal ion source for having used liquid-gallium etc., plasma-type ion source, gas electricity
Field ionization type ion source etc..Ion-optic system 14b is such as with the first electrostatic collector lens (condenser lenses)
Second electrostatic lenses such as lens, static deflecter, object lens etc..Plasma-type ion source is being used as ion source 14a
In the case of, the High-speed machining of high current beam can be realized, to the taking-up suitable for larger-size coupons S.For example, by making
It uses argon ion as gas electric field ionization type ion source, also can irradiate argon ion from converging ion beam illuminating optical system 14
Beam.
Electron beam illuminating optical system 15 is fixed on sample chamber 11 as follows：In the inside of sample chamber 11, by beam
Injection part (illustration omitted) has tilted defined angle (such as 60 °) in the vertical direction relative to the microscope carrier 12 in irradiation area
Inclined direction on towards microscope carrier 12 and keep optical axis parallel with inclined direction.Thereby, it is possible to the examination being fixed on microscope carrier 12
The irradiation objects such as sample V, coupons S and the needle 19a that is present in irradiation area irradiate downward from the top of inclined direction
Electron beam.
Electron beam illuminating optical system 15 has the electron source 15a for generating electronics and makes the electronics projected from electron source 15a
The electron-optical system 15b for assembling and deflecting.Electron source 15a and electron-optical system 15b is according to exporting from computer 22
Control signal controlled, the irradiation position of electron beam and irradiation condition etc. are controlled by computer 22.Electron-optical system
15b is such as with electromagnetic lens, deflector.
Alternatively, it is also possible to be carried out to the configuration of electron beam illuminating optical system 15 and converging ion beam illuminating optical system 14
It exchanges, by the configuration of electron beam illuminating optical system 15 in vertical direction, it will the configuration of Focused Ion Beam illuminating optical system 14 exists
On the inclined direction for having tilted defined angle relative to vertical direction.
The gas ion beam (GB) such as irradiating ar-ion beam of gas ion beam optics system 18.Gas ion beam optics system
System 18 can make argon gas ion and is irradiated under the low accelerating voltage of 1kV or so.Such gas ion beam (GB) with
Converging ion beam (FIB) is relatively low compared to convergence, therefore is lower to the etch-rate of coupons S and tiny sample piece Q.Therefore,
Accurate finishing suitable for coupons S and tiny sample piece Q.
When irradiating charged particle beam or electron beam to irradiation objects such as sample V, coupons S and needle 19a, detector 16
Detect intensity (the i.e. Secondary Charged Particle of Secondary Charged Particle (the secondary electron, secondary ion) R radiated from irradiation object
Amount), and export the information of the detection limit of Secondary Charged Particle R.The configuration of detector 16 can detect two in the inside of sample chamber 11
The position of the amount of secondary charged particle R, such as the position relative to irradiation objects oblique uppers such as sample V, coupons S in irradiation area
It sets etc. and is fixed on sample chamber 11.
Gas offer portion 17 is fixed on sample chamber 11, is configured to gas injection portion (also referred to as in the inside of sample chamber 11
For nozzle) and towards microscope carrier 12.Gas offer portion 17 can be provided to sample V, coupons S for according to sample V, coupons S
Material and selectively promote charged particle beam (converging ion beam) to the etching gas of the etching of sample V, coupons S,
The deposition gas of deposition film etc. for forming the deposits such as metal or insulator on the surface of sample V, coupons S.
The needle drive mechanism 19b for constituting coupons dislocation unit 19 is accommodated in sample chamber 11 with the state being connect with needle 19a
Inside, needle 19a displacements are made according to the control signal exported from computer 22.Needle drive mechanism 19b is wholely set with microscope carrier 12,
It is mobile with 12 one of microscope carrier such as when microscope carrier 12 is rotated by leaning device 13b around sloping shaft (i.e. X-axis or Y-axis).
There is needle drive mechanism 19b the mobile mechanism for making needle 19a be moved parallel to respectively along 3-D walls and floor (to save sketch map
Show) and make needle 19a cast-overs 19a center axis rotation rotating mechanism (illustration omitted).In addition, the 3-D walls and floor and sample table
Orthogonal three-axis reference be independent, in the orthogonal three-axis reference as the two-dimensional coordinates parallel with the surface of microscope carrier 12
In, in the case where the surface of microscope carrier 12 is in heeling condition, rotation status, which tilts, rotates.
Computer 22 at least irradiates optics to microscope carrier driving mechanism 13, converging ion beam illuminating optical system 14, electron beam
System 15, gas offer portion 17 and needle drive mechanism 19b are controlled.
In addition, the configuration of computer 22 is connected with display device 21 and exports defeated with operator in the outside of sample chamber 11
Enter the input equipments such as the mouse for operating corresponding signal, keyboard 23.Computer 22 according to the signal exported from input equipment 23 or
The action of charged particle beam apparatus 10 is uniformly controlled by the signal etc. that preset automatic running control process generates.
The secondary band electrochondria that computer 22 is detected detector 16 while scanning the irradiation position of charged particle beam
The detection limit of sub- R is converted to luminance signal corresponding with irradiation position, according to the two-dimensional position of the detection limit of Secondary Charged Particle R
Distribution generates the image data for the shape for indicating irradiation object.In the case where absorbing current image pattern, 22 one side scanning strip of computer
The irradiation position of electrochondria beamlet detects the absorption electric current flowed in needle 19a on one side, thus according to the two-dimensional position for absorbing electric current
(current image is absorbed be distributed) and generate the absorption current image data for the shape for indicating needle 19a.
Computer 22 by for executing each image data amplification, diminution, movement and rotation etc. operations picture and life
At each image data be shown in together in display device 21.Computer 22 will be for carrying out the pattern in automatic sequence control
The picture of the various settings such as selection and processing setting is shown in display device 21.
The sample processing method of the present invention for the charged particle beam apparatus 10 for having used above structure is illustrated.
Fig. 2, Fig. 3 be the stage the definition graph of sample processing method is shown.
In addition, in the following embodiments, as sample processing method, having enumerated through charged particle beam to being supported on
Coupons S on coupon holder P carries out filming, and the example of the tiny sample piece Q of tem observation is made and illustrates.
In addition, as shown in Fig. 2 (a), it is contemplated that coupons S is, for example, to cut out the shape on the sample V (referring to Fig.1) being made of semiconductor substrate
At the coupons behind the region for having multiple equipment 31,31 ..., the direction of equipment 31,31 ... arrangements is known as thickness direction T, it will be with
Thickness direction T is at right angles and the extending direction of equipment 31 is known as width direction W.In addition, will be with thickness direction T and width direction
Direction rectangular W is known as machine direction D.
First, it processes to cut out (referring to Fig.1) from the sample V being made of semiconductor substrate by FIB and be used as comprising from pair
The coupons S of the zonule of elephant.Then, using needle 19a (referring to Fig.1) so that the thickness direction of semiconductor substrate is vertical direction
The mode of (machine direction D) makes coupon holder P (referring to Fig.1) support the coupons S as processing object.Then, such as Fig. 2
(b) shown in, irradiation area is set to coupons S, from converging ion beam illuminating optical system 14 (referring to Fig.1) along machine direction D
Irradiate FIB.Then, the defined processing thickness of the thickness direction T along coupons S and the in the width direction working width of W are formed
The first removal region E1 of W1.For example expose equipment 31 in the end E1e of the root side of the first removal region E1 as a result,
End face.
Next, as shown in Fig. 2 (c), through-thickness T is to the position Chong Die with the first removal region E1, i.e., from first
Removal region E1 through-thickness T offsets by the position irradiation FIB of defined processing thickness, forms the second removal region E2.This
When, as the working width W2 of W in the width direction, it is set as the defined width for reducing width Delta W shorter than working width W1.By
This, the second end E2e for removing the root side of region E2 is close to wide positioned at the end E1e of the root side than the first removal region E1
Spend the position of the central side offset of direction W.
Also, as shown in (a) of Fig. 3, through-thickness T to the n-th Chong Die positions removal region En for being formed before,
FIB is irradiated in the position that defined processing thickness is offset by from the n-th removal region En through-thickness T, forms (n+1) removal
Region E (n+1).At this point, the working width W (n+1) as W in the width direction, is set as than the n-th removal region En's before
Reduce the width of width Delta W as defined in working width Wn is short.In this way, FIB is irradiated to coupons S along machine direction D, in thickness side
The multiple removal regions for reducing while the stage is overlapped to form on T working width, are consequently formed the thickness reduced along coupons S
The tiny sample piece Q of the thickness of direction T.
Multiple removal regions that working width is reduced by the stage as formation, form on tiny sample piece Q
There is the lightening holes Qs for reducing its thickness.Moreover, in the part adjacent with lightening holes Qs, i.e. it is each removal region root
The connected part in the end of portion side is formed with rake (part adjacent with lightening holes) C (rake formation process).It tilts
Portion C be, for example, relative to thickness direction T in the range of 10 ° less than 90 ° inclined inclined surface, as long as such as rake
The surface of C is formed as parallel with the illumination angle of ar-ion beam.As an example, in the present embodiment, rake C is in opposite
20 ° of inclined surface is tilted in thickness direction T.Here, in the range of 10 ° less than 90 °, by with less than 90 ° compared with
Small incident angle Incident beams, can make beam incidence shoal the damaging layer of sample.As a result, due to making damaging layer shoal,
Even the therefore fine sample of equipment size, also can clearly grasp processing terminal when processing.
In addition, in Fig. 2, embodiment shown in Fig. 3, by so that the width direction W along coupons S working width
The mode to become smaller to the Wn stages makes FIB be scanned and be irradiated, and forms rake (part adjacent with lightening holes) C,
But the scan method of FIB is not limited to this.
For example, in the example of the scanning of FIB shown in Fig. 4, make along the width side of the coupons S as lightening holes Qs
Working width Wn to the removal region En of W is constant.Then, further from it is each removal region En root side to relative to
Inclined directions in the range of 10 ° less than 90 ° thickness direction T make FIB continuously be scanned.Exist as a result, in FIB
Relative to formation rake C in the region after being scanned on the inclined directions thickness direction T.Along adding for such rake C
Gradually increase to the work width Wn stages.Here, the scan method of FIB is used the scanning direction of FIB from the width side of coupons S
To the vector scan (vector scan) being changed to relative to the inclined directions thickness direction T.
Alternatively, it is also possible to set the first rectangular illumination region in the width direction of coupons S, relative to thickness direction
The second rectangular illumination region is set on the inclined directions T, and raster scanning (raster is used in respective irradiation area
Scan) or bitmap scans (bitmap scan).
In addition to this, the lightening holes Qs by tiny sample piece Q and the inclination as the part adjacent with lightening holes Qs
Portion C divide trapezoid area in FIB scanning direction simultaneously be not particularly limited, as long as can be formed as with lightening holes Qs phases
The rake C of adjacent part then can also scan FIB in any direction and form removal region.
As described above, in the stage reducing the forming process in multiple removal regions of working width, when arbitrary
Machine irradiates EB from electron beam illuminating optical system 15, obtains the SEM image of rake C.Then, to the SEM image that is obtained into
Row observation, counts the quantity for the equipment 31,31 ... exposed in rake C, so can determine that the thickness direction T of FIB
Processing terminal.The cross sectional shape for the equipment 31,31 ... exposed in rake C for example can be in the section than through-thickness T
The cross sectional shape bigger of the equipment of exposing and more brightly see, therefore accurately the quantity of equipment 31,31 ... can be carried out
It counts.
In addition, for example by computer 22 automatically carry out from SEM image get the equipment 31 exposed in rake C,
31 ... counting, and its result is fed back to the irradiation condition of the FIB for coupons S, thus, it is possible to automate to be formed in root
Portion side is connected with the tiny sample piece Q of rake C.
The concrete example of the detection method of processing terminal as such automation, will appear in object observing position in advance
(exposing in rake C) design on the quantity of equipment 31,31 ... input to computer 22.Such equipment 31 makes a reservation for
Number occur can grasp according to design data for the integrated circuit for being formed in sample V etc..
Then, the removal by image comparison software performed by computer 22 etc. by repeating the irradiation based on FIB
The formation in region and the acquisition for irradiating SEM image, count to appearing in the quantity of equipment 31 of rake C.Moreover, pre-
First input to the equipment 31 of computer 22 it is predetermined there is number and the acquisition based on actual SEM image appear in rake C
Equipment 31 quantity it is consistent when, processing terminal will be identified as here and terminate the irradiation of FIB.
In addition, another concrete example of the detection method for processing terminal as automation, (is partly being led by FIB from sample
Structure base board) V when cutting out coupons S (referring to Fig.1), obtains the SEM image of the side wall of coupons S.Then, it is held by computer 22
The quantity of the equipment 31 to exposing in the side wall of coupons S such as capable image comparison software counts.Alternatively, can also be right
Cut out the quantity for the equipment 31 exposed in the sheared edge of the sample V after coupons S, based on the integrated electricity being formed on sample V
The quantity for the equipment 31 of the coupons S of the design data on road etc. cut out in the design of part is counted.
In this way, the sum in the equipment 31 of the coupons S identified from computer 22 is subtracted by repeating to be based on FIB
Irradiation removal region formation and irradiate the acquisition of SEM image and appear in the quantity of the actual equipment 31 of rake C,
And it when with pre-entering consistent to the desired quantity of equipment 31 remained in coupons S of computer 22, will be identified as here
Processing terminal and terminate the irradiation of FIB.
Next, being shone tiny sample piece Q as shown in (b) of Fig. 3, such as with the angle parallel with the surface of rake C
It emanates body ion beam such as ar-ion beam, mitigates processing candy strip (the curtain effect) (argon generated because having used the processing of FIB
Beam exposure process).
In the argon beam exposure process, from gas ion beam optics system 18 (referring to Fig.1) make argon gas ion and
Such as ar-ion beam is irradiated to the whole region of tiny sample piece Q under the low accelerating voltage of 1kV or so.At this point, it is preferred that from electronics
Beam illuminating optical system 15 irradiates EB towards tiny sample piece Q, and ar-ion beam is carried out to small according to the SEM image obtained
The finishing of coupons Q.The detection of processing terminal at this time also being capable of adding using the tiny sample piece Q based on above-mentioned FIB
The processing end point determination process in working hour.Thereby, it is possible to carry out the automation of argon beam exposure process.
In such argon beam exposure process, as the part adjacent with the root portion of tiny sample piece Q, it is formed with phase
For thickness direction T at 10 ° less than the tilted rake C of 90 ° of angular range, therefore can be to reducing coupons
The thickness of S and the whole region of the tiny sample piece Q of filming equably irradiates ar-ion beam.
That is, as shown in Figure 1, gas ion beam optics system 18 be configured to from side overlook sample chamber 11 when, gas from
The beam exposure axis of beamlet (GB), which is in, for example to be shone with the beam of the electron beam (EB) irradiated from electron beam illuminating optical system 15
Penetrate the direction that axis intersects vertically.Therefore, it when thickness direction T is for example rectangular with the width direction W of tiny sample piece Q, can produce
The raw shadow region for not irradiating ar-ion beam to the root portion of tiny sample piece Q.
But by as present embodiment with the ar-ion beam relative to the inclined angular illuminations of thickness direction T
Accordingly inclined rake C in the range of tiny sample piece Q is formed in such as 10 ° less than 90 °, can eliminate not
The shadow region that ar-ion beam is irradiated to the root portion of tiny sample piece Q, so as to reliably to the entire of tiny sample piece Q
Area illumination ar-ion beam.Thereby, it is possible to be formed in the whole region of tiny sample piece Q mitigate processing candy strip so as to
Enough tem observation coupons for obtaining distinct observation picture.
In addition, as shown in Fig. 3 (c), can also be formed from along the opposite direction of the above-mentioned machine direction of thickness direction T
Multiple removal regions of the working width of W in the width direction are reduced to stage, thickness is reduced to be formed to have from both sides
Lightening holes Qs tiny sample piece Q.
Embodiments of the present invention are illustrated, but these embodiments are suggested as examples, and unexpectedly
Taste, which, is defined the range of invention.These embodiments can be implemented by various other ways, not depart from invention
Purport in the range of, can carry out it is various omit, displacement, change.These embodiments and modifications thereof are contained in the model of invention
It encloses and in purport and is contained in claims in the range of recorded invention and its equalization.
Claims (7)
1. a kind of charged particle beam apparatus irradiates charged particle beam towards sample, tiny sample piece is made, which is characterized in that
It has：
Charged particle beam lens barrel can irradiate charged particle beam towards the sample；
Sample chamber stores the charged particle beam lens barrel；And
Coupon holder can keep the sample,
When forming the tiny sample piece of thickness in a part of region for reducing the sample by the charged particle beam, with
The part that the lightening holes of the tiny sample piece are adjacent is formed relative to the inclined rake of the lightening holes.
2. charged particle beam apparatus according to claim 1, which is characterized in that
The charged particle beam apparatus irradiates ar-ion beam in a manner of parallel relative to the rake.
3. a kind of sample processing method is directed towards sample irradiation charged particle beam, the part for reducing the sample is made
The sample processing method of the tiny sample piece of the thickness in region, which is characterized in that its with rake formation process,
In the rake formation process, by the irradiation of the charged particle beam, along the thickness direction eclipsed of the sample
At multiple removal regions, the removal region has along the defined processing thickness of the thickness direction and edge and the thickness side
To the working width of vertical width direction, reduce the working width to the stage when being overlapped the removal region every time, thus
It is formed relative to the inclined rake of the lightening holes in the part adjacent with the lightening holes of tiny sample piece.
4. sample processing method according to claim 3, which is characterized in that
The processing thickness and the working width in each removal region in the rake formation process are with reference to scanning
The SEM image of the rake that type electron microscope is obtained and determination.
5. sample processing method according to claim 4, which is characterized in that
The sample is to be overlapped multiple embedded layers along the thickness direction in the inside of base material and formed,
In the rake formation process, using the SEM image to the number of the embedded layer exposed in the rake
Amount is counted, to determine processing terminal.
6. according to the sample processing method described in any one in claim 3 to 5, which is characterized in that
In the rake formation process, make the lightening holes and the inclination as the part adjacent with the lightening holes
Portion mutually tilts in the range of 10 ° less than 90 °.
7. according to the sample processing method described in any one in claim 3 to 6, which is characterized in that
The sample processing method also has argon beam exposure process, in the argon beam exposure process, towards the tiny sample
Piece irradiates ar-ion beam in a manner of parallel relative to the rake.
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| JP2017-060907 | 2017-03-27 | ||
| JP2017060907A JP6974820B2 (en) | 2017-03-27 | 2017-03-27 | Charged particle beam device, sample processing method |
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| CN108666196B CN108666196B (en) | 2022-03-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081515A (en) * | 2018-10-18 | 2020-04-28 | 日本株式会社日立高新技术科学 | Charged particle beam device and sample processing and observation method |
| JP2021051878A (en) * | 2019-09-24 | 2021-04-01 | 株式会社日立ハイテクサイエンス | Charged particle beam irradiation device and control method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190035587A (en) * | 2017-09-25 | 2019-04-03 | 셀라 - 솔루션스 인에이블링 나노 어낼리시스 엘티디. | Depth-controllable ion milling |
| CN111366428B (en) * | 2020-03-03 | 2023-06-09 | 上海华力集成电路制造有限公司 | Method for preparing TEM sample by FIB (fiber reinforced plastic) inverted cutting |
| WO2023084773A1 (en) * | 2021-11-15 | 2023-05-19 | 株式会社日立ハイテクサイエンス | Charged particle beam device and method for controlling charged particle beam device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07318468A (en) * | 1994-05-25 | 1995-12-08 | Hitachi Ltd | Manufacture of electron microscope observational sample |
| US20100288924A1 (en) * | 2007-08-08 | 2010-11-18 | Takashi Kaito | Composite focused ion beam device, process observation method using the same,and processing method |
| JP2011203266A (en) * | 2011-05-27 | 2011-10-13 | Sii Nanotechnology Inc | Thin sample preparing method |
| US20120043463A1 (en) * | 2009-04-28 | 2012-02-23 | Toshihide Agemura | Composite charged particle radiation device |
| CN102564818A (en) * | 2010-07-30 | 2012-07-11 | 乌尔姆大学 | Tem-lamella, process for its manufacture, and apparatus for executing the process |
| CN102809496A (en) * | 2011-06-03 | 2012-12-05 | Fei公司 | Method for preparing thin samples for tem imaging |
| CN103245537A (en) * | 2012-02-10 | 2013-08-14 | 日本株式会社日立高新技术科学 | Method of preparing sample for TEM observation |
| CN104737266A (en) * | 2012-10-15 | 2015-06-24 | 株式会社日立高新技术 | Charged particle beam device and sample preparation method |
| CN105388048A (en) * | 2014-08-29 | 2016-03-09 | 日本株式会社日立高新技术科学 | Automatic sample piece manufacturing device |
| CN106233420A (en) * | 2014-05-09 | 2016-12-14 | 株式会社日立高新技术 | sample processing method and charged particle beam apparatus |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2992682B2 (en) | 1996-11-26 | 1999-12-20 | セイコーインスツルメンツ株式会社 | Cross section observation method for integrated circuits |
| JP5039961B2 (en) | 2007-04-24 | 2012-10-03 | エスアイアイ・ナノテクノロジー株式会社 | 3D image construction method |
| CN102023108B (en) * | 2009-09-23 | 2012-06-06 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing transmission electron microscope sample |
| JP2011154920A (en) * | 2010-01-28 | 2011-08-11 | Hitachi High-Technologies Corp | Ion milling device, sample processing method, processing device, and sample driving mechanism |
| DE102012020478A1 (en) * | 2012-10-18 | 2014-05-08 | Carl Zeiss Microscopy Gmbh | Particle beam system and method for processing a TEM sample |
| JP6101562B2 (en) * | 2013-05-15 | 2017-03-22 | 株式会社日立ハイテクノロジーズ | Focused ion beam device, sample processing method using focused ion beam device, and sample processing program |
| US9057670B2 (en) * | 2013-05-30 | 2015-06-16 | International Business Machines Corporation | Transmission electron microscope sample fabrication |
| US9620333B2 (en) * | 2014-08-29 | 2017-04-11 | Hitachi High-Tech Science Corporation | Charged particle beam apparatus |
| US9679743B2 (en) * | 2015-02-23 | 2017-06-13 | Hitachi High-Tech Science Corporation | Sample processing evaluation apparatus |
-
2017
- 2017-03-27 JP JP2017060907A patent/JP6974820B2/en active Active
-
2018
- 2018-03-05 TW TW107107249A patent/TWI768001B/en active
- 2018-03-22 CN CN201810239287.1A patent/CN108666196B/en active Active
- 2018-03-26 KR KR1020180034692A patent/KR102590634B1/en active IP Right Grant
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07318468A (en) * | 1994-05-25 | 1995-12-08 | Hitachi Ltd | Manufacture of electron microscope observational sample |
| US20100288924A1 (en) * | 2007-08-08 | 2010-11-18 | Takashi Kaito | Composite focused ion beam device, process observation method using the same,and processing method |
| US20120043463A1 (en) * | 2009-04-28 | 2012-02-23 | Toshihide Agemura | Composite charged particle radiation device |
| CN102564818A (en) * | 2010-07-30 | 2012-07-11 | 乌尔姆大学 | Tem-lamella, process for its manufacture, and apparatus for executing the process |
| JP2011203266A (en) * | 2011-05-27 | 2011-10-13 | Sii Nanotechnology Inc | Thin sample preparing method |
| CN102809496A (en) * | 2011-06-03 | 2012-12-05 | Fei公司 | Method for preparing thin samples for tem imaging |
| CN103245537A (en) * | 2012-02-10 | 2013-08-14 | 日本株式会社日立高新技术科学 | Method of preparing sample for TEM observation |
| CN104737266A (en) * | 2012-10-15 | 2015-06-24 | 株式会社日立高新技术 | Charged particle beam device and sample preparation method |
| CN106233420A (en) * | 2014-05-09 | 2016-12-14 | 株式会社日立高新技术 | sample processing method and charged particle beam apparatus |
| CN105388048A (en) * | 2014-08-29 | 2016-03-09 | 日本株式会社日立高新技术科学 | Automatic sample piece manufacturing device |
| KR20160026752A (en) * | 2014-08-29 | 2016-03-09 | 가부시키가이샤 히다치 하이테크 사이언스 | Automatic sample strip manufacturing apparatus |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081515A (en) * | 2018-10-18 | 2020-04-28 | 日本株式会社日立高新技术科学 | Charged particle beam device and sample processing and observation method |
| CN111081515B (en) * | 2018-10-18 | 2024-01-30 | 日本株式会社日立高新技术科学 | Charged particle beam device and sample processing and observing method |
| JP2021051878A (en) * | 2019-09-24 | 2021-04-01 | 株式会社日立ハイテクサイエンス | Charged particle beam irradiation device and control method |
| JP7360871B2 (en) | 2019-09-24 | 2023-10-13 | 株式会社日立ハイテクサイエンス | Charged particle beam irradiation device and control method |
Also Published As
| Publication number | Publication date |
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| CN108666196B (en) | 2022-03-29 |
| KR102590634B1 (en) | 2023-10-17 |
| KR20180109734A (en) | 2018-10-08 |
| JP2018163826A (en) | 2018-10-18 |
| TW201835964A (en) | 2018-10-01 |
| JP6974820B2 (en) | 2021-12-01 |
| TWI768001B (en) | 2022-06-21 |
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