CN108666005A - Conductive silver paste for photovoltaic cell - Google Patents
Conductive silver paste for photovoltaic cell Download PDFInfo
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- CN108666005A CN108666005A CN201710188077.XA CN201710188077A CN108666005A CN 108666005 A CN108666005 A CN 108666005A CN 201710188077 A CN201710188077 A CN 201710188077A CN 108666005 A CN108666005 A CN 108666005A
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- China
- Prior art keywords
- parts
- photovoltaic cell
- silver paste
- conductive silver
- microcrystalline glass
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002002 slurry Substances 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 229910001947 lithium oxide Inorganic materials 0.000 claims abstract description 8
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 8
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 claims abstract description 7
- 229910001626 barium chloride Inorganic materials 0.000 claims abstract description 7
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 claims abstract description 7
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- -1 alkyl phenol Chemical compound 0.000 claims abstract description 4
- 229940051841 polyoxyethylene ether Drugs 0.000 claims abstract description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims abstract description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 15
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical group CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 229920001451 polypropylene glycol Polymers 0.000 claims description 5
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 4
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 4
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 4
- 239000001856 Ethyl cellulose Substances 0.000 claims description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 4
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005642 Oleic acid Substances 0.000 claims description 4
- 229920001249 ethyl cellulose Polymers 0.000 claims description 4
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 4
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 claims description 3
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical group CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims 1
- 239000011297 pine tar Substances 0.000 claims 1
- 229940068124 pine tar Drugs 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000006210 lotion Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910021418 black silicon Inorganic materials 0.000 description 2
- 230000010307 cell transformation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- XFDJMIHUAHSGKG-UHFFFAOYSA-N chlorethoxyfos Chemical compound CCOP(=S)(OCC)OC(Cl)C(Cl)(Cl)Cl XFDJMIHUAHSGKG-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention discloses a kind of conductive silver paste for photovoltaic cell, and the electrocondution slurry is grouped as by the group of following parts by weight：75 ~ 92 parts of silver powder, 5 ~ 12 parts of organic solvent, 2 ~ 3 parts of organic carrier, 0.5 ~ 1 part of alkyl phenol polyoxyethylene ether, 0.8 ~ 5.3 part of microcrystalline glass powder；The grain size D50 of the microcrystalline glass powder is 0.3 2 μm；The microcrystalline glass powder is composed of the following components：10 ~ 50 parts of tellurium dioxide, 20 ~ 80 parts of lithia, 2 ~ 10 parts of zinc oxide, 1 ~ 15 part of tungsten oxide, 0.4 ~ 2 part of tungsten dioxide, 1 ~ 6 part of molybdenum dioxide, 1 ~ 4 part of nickel protoxide, 1 ~ 2 part of bismuth chloride, 0.5 ~ 0.8 part of barium chloride.Electrocondution slurry of the present invention effectively improves cell conversion efficiency, it may have high temperature viscosity is big, the big feature of surface tension, and slurry melten glass in sintering is not easy to flow, and keeps fine line style.
Description
Technical field
The present invention relates to a kind of conductive silver pastes for photovoltaic cell, belong to solar cell technical field of function materials.
Background technology
Photovoltaic cell has been achieved with development of advancing by leaps and bounds, photovoltaic cell in recent years as new cleaning fuel important branch
Technology is also with rapid changepl. never-ending changes and improvements, and full industrial chain is all actively promoting photovoltaic cell transformation efficiency by technological innovation and reducing cost,
Par online is striven for, traditional high pollution energy is substituted.
Crystal silicon photovoltaic battery is the main type of current photovoltaic cell, 90% or more accounting, and photoelectricity transformation principle is：Boron
The P-type silicon of doping and the N-type silicon of phosphorus doping form PN junction, and when sunlight irradiates, PN junction is absorbed by photon energy excitation electricity
Sub- transition forms electron-hole pair, to generate carrier.
In photovoltaic cell light-receiving surface（Front）And shady face（The back side）Conductive metal slurry is coated, it being capable of shape after oversintering
At metal electrode, PN junction generates carrier and is exported by metal electrode, forms electric current.Metal electrode will be formed well with silicon base
Ohmic contact has lower ohmic contact resistance and bulk resistor, reduces current loss, improves solar cell transformation efficiency.
In order to realize that good Ohmic contact, raising electrode conductivuty, those skilled in the art have done numerous studies,
Middle glass is played an important role.For example, glass is wanted and antireflection layer（SiNx）Reaction, contacts after eroding anti-reflection layer with silicon substrate,
Also, liquid glass can dissolve silver, and Argent grain is precipitated in silicon substrate contact layer while cooling, reduces ohmic contact resistance.As before
The lead oxide of people's research, tellurium oxide action principle.In addition, proposing to avoid devitrification of glass in the research of forefathers, it is believed that crystallization
It can cause harmful effect.
Invention content
The present invention provides a kind of conductive silver paste for photovoltaic cell, which effectively improves
Cell conversion efficiency, it may have high temperature viscosity is big, the big feature of surface tension, and slurry melten glass in sintering is not easy to flow, and protects
Hold fine line style.
In order to achieve the above objectives, the technical solution adopted by the present invention is：A kind of conductive silver paste for photovoltaic cell, it is described
Electrocondution slurry is grouped as by the group of following parts by weight：
75 ~ 92 parts of silver powder,
5 ~ 12 parts of organic solvent,
2 ~ 3 parts of organic carrier,
0.5 ~ 1 part of alkyl phenol polyoxyethylene ether,
0.8 ~ 5.3 part of microcrystalline glass powder；
The grain size D50 of the microcrystalline glass powder is 0.3-2 μm；
The microcrystalline glass powder is composed of the following components：
10 ~ 50 parts of tellurium dioxide,
20 ~ 80 parts of lithia,
2 ~ 10 parts of zinc oxide,
1 ~ 15 part of tungsten oxide,
0.4 ~ 2 part of tungsten dioxide,
1 ~ 6 part of molybdenum dioxide,
1 ~ 4 part of nickel protoxide,
1 ~ 2 part of bismuth chloride,
0.5 ~ 0.8 part of barium chloride.
Further improved technical solution in above-mentioned technical proposal is as follows：
1. in said program, the silver powder shape is ball-type, polyhedral, stub shape, dendritic or piece type.
2. in said program, the organic solvent be terpinol, butyl carbitol, propylene glycol phenylate, propylene glycol monomethyl ether,
At least one of dimethyl glutarate, dimethyl succinate.
3. in said program, the organic carrier is butyl carbitol acetate, ethyl cellulose, acrylate, oil
Acid, polypropylene glycol, polyamide wax press 75：7：6：4：3：5 weight ratios mix.
4. in said program, organic carrier heating stirring under 90 degree of temperature conditions mixes.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art：
1. the present invention is used for the conductive silver paste of photovoltaic cell, contain 10 ~ 50 parts of tellurium dioxide, lithia 20 ~ 80 in formula
Part, 2 ~ 10 parts of zinc oxide, 1 ~ 15 part of tungsten oxide, can be precipitated " microcrystalline glass ", this microcrystalline glass while cooling
Applied to crystal silicon photovoltaic battery front side electrode silver paste, the performance more excellent than conventional unformed glass is achieved, battery is effectively improved
Transformation efficiency, it may have high temperature viscosity is big, the big feature of surface tension, and slurry melten glass in sintering is not easy to flow, and keeps essence
Filament type；Secondly, 0.4 ~ 2 part of tungsten dioxide, 1 ~ 6 part of molybdenum dioxide, nickel protoxide 1 ~ 4 are further added in glass powder
Part, promote metallic crystal to be precipitated, raising and silicon substrate Ohmic contact improve transformation efficiency；Again, it is based on tellurium dioxide 10 ~ 50
1 ~ 2 part of bismuth chloride and barium chloride are further added in 1 ~ 15 part of part, 20 ~ 80 parts of lithia, 2 ~ 10 parts of zinc oxide, tungsten oxide system
0.5 ~ 0.8 part, as cosolvent, promotes glass and silver powder dissolving, reduce fusing point.
2. the present invention is used for the conductive silver paste of photovoltaic cell, organic carrier is fine using butyl carbitol acetate, ethyl
It ties up element, acrylate, oleic acid, polypropylene glycol, polyamide wax and presses 75：7：6：4：3：5 weight ratios mix, and not only contribute to change
Kind lotion and stainless steel cloth halftone wellability, are uniformly sprawled conducive to lotion in printing process；Moreover, overcoming in electrocondution slurry
Silver powder and microcrystalline glass powder are easier to reunite the defect of sedimentation, form silver powder and the evenly dispersed slurry of microcrystalline glass powder
Material.
Specific implementation mode
With reference to embodiment, the invention will be further described：
Embodiment 1 ~ 4：A kind of conductive silver paste for photovoltaic cell, the electrocondution slurry are grouped as by the group of following parts by weight：
Table 1
；
Above-mentioned organic carrier is butyl carbitol acetate, ethyl cellulose, acrylate, oleic acid, polypropylene glycol, polyamide wax
By 75：7：6：4：3：5 weight ratios mix.
Above-mentioned organic carrier heating stirring under 90 degree of temperature conditions mixes.
Note：1 organic solvent of embodiment is terpinol, butyl carbitol, propylene glycol phenylate, propylene glycol monomethyl ether, glutaric acid two
At least one of methyl esters, dimethyl succinate；It is mixed that 2 organic solvent of embodiment is that butyl carbitol, propylene glycol phenylate are formed
Bonding solvent；3 organic solvent of embodiment is propylene glycol phenylate；4 organic solvent of embodiment is terpinol, dimethyl glutarate formation
Mixed solvent.
The microcrystalline glass powder is composed of the following components：
Table 2
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | |
| 10 ~ 50 parts of tellurium dioxide | 12 parts | 30 parts | 45 parts | 24 parts |
| 20 ~ 80 parts of lithia | 30 parts | 70 parts | 58 parts | 60 parts |
| 2 ~ 10 parts of zinc oxide | 8 parts | 3 parts | 5 parts | 6 parts |
| 1 ~ 15 part of tungsten oxide | 4 parts | 12 parts | 6 parts | 10 parts |
| 0.4 ~ 2 part of tungsten dioxide | 1.6 part | 0.6 part | 2 parts | 1.2 part |
| 1 ~ 6 part of molybdenum dioxide | 2 parts | 5 parts | 3 parts | 4 parts |
| 1 ~ 4 part of nickel protoxide | 1.8 part | 3 parts | 2 parts | 1 part |
| 1 ~ 2 part of bismuth chloride | 1.2 part | 1.8 part | 1.5 part | 1.4 part |
| 0.5 ~ 0.8 part of barium chloride | 0.8 part | 0.5 part | 0.6 part | 0.7 part |
The microcrystalline glass powder is obtained by following steps：
Step 1: by 10 ~ 50 parts of tellurium dioxide, 20 ~ 80 parts of lithia, 2 ~ 10 parts of zinc oxide, 1 ~ 15 part of tungsten oxide, titanium dioxide
0.5 ~ 0.8 part of 0.4 ~ 2 part of tungsten, 1 ~ 6 part of molybdenum dioxide, 1 ~ 4 part of nickel protoxide, 1 ~ 2 part of bismuth chloride, barium chloride mixing, in H2With
900 ~ 1000 DEG C are warming up under argon gas mixing, 10 ~ 60 minutes is kept the temperature and forms glass metal, then by glass metal in steel plate or stainless steel
Chilling is molded to obtain substrate glass on twin rollers；
Step 2: substrate glass is kept the temperature 20 ~ 60 minutes for 200 ~ 400 DEG C under oxygen-free atmosphere, then room temperature or slow with furnace temperature
It is cooling, obtain microcrystalline glass；
Step 3: using planetary ball mill ball milling after the microcrystalline glass breaking for then obtaining step 2, it is micro- to obtain metal
Crystal glass powder.
Above-mentioned silver powder shape is ball-type, polyhedral, stub shape, dendritic or piece type.
950 DEG C are warming up in above-mentioned steps one, soaking time is 30 minutes.
Soaking time is 30 minutes in above-mentioned steps two.
Oxygen-free atmosphere is vacuum, argon gas or nitrogen in above-mentioned steps two.
It is prepared by solar battery apparatus：
It is the 125*125mm or 156* of 180-250 μ m-thicks that semiconductor substrate, which selects boron-doped P-type silicon substrate, P-type silicon substrate,
The silicon chip of 156mm or other typical sizes.
The first step carries out corrosion academic title's pyramid with aqueous slkali to silicon base side（Monocrystalline）Or it is uneven（Polycrystalline）
Black silicon nanometer suede can also be made in antireflective matte of the black silicon technology of wet method.
Second step forms n type diffused layer in the P-type silicon substrate other side and PN junction is made, and n type diffused layer can be with gaseous state three
Chlorethoxyfos as diffusion source gas phase thermal diffusion method either phosphonium ion injection method or containing phosphorus pentoxide slurry coating
Thermal diffusion method etc..
Third walks, and can also be similar other in the heavy SiNx anti-reflection layers for covering one layer of 80nm thickness in silicon base matte side
Coating with good anti-reflective effect.
4th step prints in P-type silicon substrate side or coats Al electrode layers and main grid silver electrode layer, alternatively, it is also possible to profit
Passivation layer is formed in cell backside increase the absorption of the long glistening light of waves as back reflector with SiNx or Al2O3.
5th step, 1 ~ 4 slurry of embodiment are beaten on the antireflective film of N-type silicon base side by silk-screen printing, coating or ink-jet
The modes such as print form main grid and thin grid in length and breadth, and under certain sintering temperature program, cofiring forms electrode body.The temperature recommended
It is 250-350-450-550-600-700-800-900 DEG C to spend sintering procedure.
Solar battery sheet electric performance test is simulated electrical efficiency tester using solar energy, is tested at the standard conditions
（AM1.5,1000W/m2,25 DEG C）.
Contact resistance test method selects common TLM（Line transmission line model）Testing contact resistance.
Test result is as shown in table 3：
Table 3
When using above-mentioned conductive silver paste for photovoltaic cell, " microcrystalline glass ", this gold can be precipitated while cooling
Belong to devitrified glass and be applied to crystal silicon photovoltaic battery front side electrode silver paste, achieves the performance more excellent than conventional unformed glass, have
Effect improves cell conversion efficiency, it may have high temperature viscosity is big, the big feature of surface tension, and slurry melten glass in sintering is not easy to flow
It is dynamic, keep fine line style；Secondly, based on 10 ~ 50 parts of tellurium dioxide, 20 ~ 80 parts of lithia, 2 ~ 10 parts of zinc oxide, oxidation
0.5 ~ 0.8 part of 1 ~ 2 part of bismuth chloride and barium chloride are further added in 1 ~ 15 part of system of tungsten, as cosolvent, promote glass and silver
Powder dissolves, and reduces fusing point；Again, organic carrier using butyl carbitol acetate, ethyl cellulose, acrylate, oleic acid,
Polypropylene glycol, polyamide wax press 75：7：6：4：3：5 weight ratios mix, and not only contribute to improve lotion and stainless steel cloth
Halftone wellability is uniformly sprawled conducive to lotion in printing process；Moreover, overcoming silver powder and microcrystalline glass in electrocondution slurry
Powder is easier to reunite the defect of sedimentation, forms silver powder and the evenly dispersed slurry of microcrystalline glass powder.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (5)
1. a kind of conductive silver paste for photovoltaic cell, it is characterised in that：The electrocondution slurry is grouped as by the group of following parts by weight：
75 ~ 92 parts of silver powder,
5 ~ 12 parts of organic solvent,
2 ~ 3 parts of organic carrier,
0.5 ~ 1 part of alkyl phenol polyoxyethylene ether,
0.8 ~ 5.3 part of microcrystalline glass powder；
The grain size D50 of the microcrystalline glass powder is 0.3-2 μm；
The microcrystalline glass powder is composed of the following components：
10 ~ 50 parts of tellurium dioxide,
20 ~ 80 parts of lithia,
2 ~ 10 parts of zinc oxide,
1 ~ 15 part of tungsten oxide,
0.4 ~ 2 part of tungsten dioxide,
1 ~ 6 part of molybdenum dioxide,
1 ~ 4 part of nickel protoxide,
1 ~ 2 part of bismuth chloride,
0.5 ~ 0.8 part of barium chloride.
2. the conductive silver paste according to claim 1 for photovoltaic cell, it is characterised in that：The silver powder shape is ball
Type, polyhedral, stub shape, dendritic or piece type.
3. the conductive silver paste according to claim 1 for photovoltaic cell, it is characterised in that：The organic solvent is pine tar
At least one of alcohol, butyl carbitol, propylene glycol phenylate, propylene glycol monomethyl ether, dimethyl glutarate, dimethyl succinate.
4. the conductive silver paste according to claim 1 for photovoltaic cell, it is characterised in that：The organic carrier is butyl
Carbitol acetate, ethyl cellulose, acrylate, oleic acid, polypropylene glycol, polyamide wax press 75：7：6：4：3：5 weight ratios are mixed
It closes.
5. the conductive silver paste according to claim 7 for photovoltaic cell, it is characterised in that：The organic carrier is at 90 degree
Heating stirring mixes under temperature condition.
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|---|---|---|---|---|
| CN101531459A (en) * | 2009-04-20 | 2009-09-16 | 北京航空航天大学 | Rare earth thulium-doped aluminate fluorescent glass and preparation method thereof |
| CN103043907A (en) * | 2012-12-14 | 2013-04-17 | 中国科学院上海硅酸盐研究所 | Glass with mid-infrared luminescent property, and preparation method and application thereof |
| CN103915127A (en) * | 2013-01-03 | 2014-07-09 | 上海匡宇电子技术有限公司 | Front silver paste for high sheet resistance silicon-based solar cell and preparing method of front silver paste |
| CN105118545A (en) * | 2015-09-15 | 2015-12-02 | 苏州晶银新材料股份有限公司 | Front electrode silver paste of lead-free solar cell |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101531459A (en) * | 2009-04-20 | 2009-09-16 | 北京航空航天大学 | Rare earth thulium-doped aluminate fluorescent glass and preparation method thereof |
| CN103043907A (en) * | 2012-12-14 | 2013-04-17 | 中国科学院上海硅酸盐研究所 | Glass with mid-infrared luminescent property, and preparation method and application thereof |
| CN103915127A (en) * | 2013-01-03 | 2014-07-09 | 上海匡宇电子技术有限公司 | Front silver paste for high sheet resistance silicon-based solar cell and preparing method of front silver paste |
| CN105118545A (en) * | 2015-09-15 | 2015-12-02 | 苏州晶银新材料股份有限公司 | Front electrode silver paste of lead-free solar cell |
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