CN108664737A - A kind of photovoltaic cell Building of Simulation Model method and device for considering locally to shade - Google Patents
A kind of photovoltaic cell Building of Simulation Model method and device for considering locally to shade Download PDFInfo
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Abstract
The present invention discloses a kind of photovoltaic cell Building of Simulation Model method and device for considering locally to shade, and described method includes following steps：Obtain the standard parameter of photovoltaic cell；Determine that equivalent series resistance, equivalent parallel resistance, P N knot effects currents and the P N of photovoltaic cell simulation model tie effect reverse saturation current according to the standard parameter of the photovoltaic cell；The output load current of photovoltaic cell simulation model is determined according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current, P N knots effects current, P N knot effect reverse saturation currents and avalanche breakdown voltage；The photovoltaic cell simulation model for considering locally to shade is established according to equivalent series resistance, equivalent parallel resistance, equivalent diode P N knot direction saturation currents and output load current, the equivalent parallel resistance is in parallel with a reverse current source, a positive and negative interpolar bypass diode in parallel for photovoltaic cell component.Described device is for realizing the method.
Description
Technical field
The present invention relates to photovoltaic power generation technologies, and in particular to a kind of photovoltaic cell Building of Simulation Model for considering locally to shade
Method and device.
Background technology
Increasingly depleted with fossil energy and the environmental problem gradually aggravated, the regenerative resources such as photovoltaic have obtained more
The photovoltaic charge station for the electric vehicle for adding and widely applying, while being risen in transportation also step into residential quarters,
Shopping centre and industrial park etc., and a large amount of photovoltaic battery panel is mounted near groups of building, this just necessarily causes photovoltaic apparatus to go out
The case where current situation portion shades.
Part shading refers to, since the factors such as dust, building cause uneven illumination even, connecting in photovoltaic generating system
Shielded photovoltaic cell component becomes load in branch, and consuming other has energy caused by the photovoltaic module of illumination.Part
Shading not only can be such that the output power of photovoltaic generating system reduces significantly, cause a large amount of energy loss, and probably draw
Send out hot spot effect.When hot spot effect occurs, the photovoltaic cell both ends by shading part are backward voltage, when backward voltage reaches
When to a certain degree, P-N junction carriers number increases severely, and does drift motion under backward voltage effect, thus makes reverse current
It increased dramatically, here it is avalanche breakdown effects.Backward voltage also significantly increases after avalanche breakdown effects occur, to drive
The temperature sharp increase of photovoltaic cell, will damage photovoltaic cell when serious.
In the prior art, the simulation model of photovoltaic cell mainly uses photovoltaic cell equivalent-circuit model, and photovoltaic cell is most
The basic form of expression is photovoltaic battery elements, and multiple photovoltaic battery elements form photovoltaic module after connection in series-parallel, and photovoltaic module is again
Photovoltaic array is formed by connection in series-parallel.Photovoltaic array is most common photovoltaic cell form in engineer application, and traditional photovoltaic
Battery equivalent circuit model does not consider the case where part is shaded, therefore there are errors for its emulation, can not be answering for photovoltaic cell
With the reliable theoretical foundation of offer.
Therefore, up for shading for part the case where, studies a kind of new photovoltaic cell simulation model so that photovoltaic electric
Pool model research is more in line with actual demands of engineering.
Invention content
The present invention is directed to the defect of traditional photovoltaic cell equivalent-circuit model, theoretical based on avalanche breakdown effects, proposes
Locally photovoltaic cell simulation model in the case of shading, the simulation model can be effectively prevented from hot spot effect initiation for a kind of consideration
Avalanche breakdown problem, improve the simulated effect of photovoltaic cell output characteristic, while can also delay battery so that
Photovoltaic cell scale-model investigation is more in line with actual demands of engineering.
First aspect present invention embodiment proposes a kind of photovoltaic cell Building of Simulation Model method for considering locally to shade,
It is characterized in that, described method includes following steps：
Obtain the standard parameter of photovoltaic cell；
Equivalent series resistance, the equivalent parallel of photovoltaic cell simulation model are determined according to the standard parameter of the photovoltaic cell
Resistance, P-N junction effects current and P-N junction effect reverse saturation current；
According to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current, P-N junction effects current, P-N
Knot effect reverse saturation current and avalanche breakdown voltage determine the output load current of photovoltaic cell simulation model；
According to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction direction saturation current and output
Load current establishes the photovoltaic cell simulation model for considering locally to shade, the equivalent parallel resistance and a reverse current source
Parallel connection, a positive and negative interpolar bypass diode in parallel for photovoltaic cell component.
According to an embodiment of the present invention, the standard parameter of the photovoltaic cell includes：The open-circuit voltage U of photovoltaic celloc、
Short circuit current Isc, design parameter is referred to table 1.
According to an embodiment of the present invention, the standard parameter according to the photovoltaic cell determines that photovoltaic cell emulates mould
Equivalent series resistance, equivalent parallel resistance, P-N junction effects current and the P-N junction effect reverse saturation current of type include：
The I of photogenerated currentphFor:
P-N junction effects current IdFor:
P-N junction effect reverse saturation current I0For:
Series resistance RsFor:
Rs=R 's·Ns/Np
Parallel resistance RshFor:
Rsh=R 'sh·Ns/Np
Wherein, IscFor photovoltaic cell short circuit current, S is light intensity, S0To refer to light intensity, Id0For the reversed full of equivalent P-N junction
And resistance, UdFor diode both end voltage, T is temperature, T0For reference temperature, CtFor temperature coefficient, EgFor the taboo of semi-conducting material
Bandwidth, k are Boltzmann constant, and A is diode quality factor, and q is charge coefficient, R 'sFor the series resistance of photovoltaic cell,
NsFor the series connection number of photovoltaic cell, R 'shFor the parallel resistance of photovoltaic cell, NpFor the number of parallel of photovoltaic cell.
According to an embodiment of the present invention, it is described according to the standard parameter, equivalent series resistance, equivalent parallel resistance,
Photogenerated current, P-N junction effects current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine that photovoltaic cell emulates mould
The output load current of type includes：
The output current I of photovoltaic battery elementspvFor
The output current I ' of photovoltaic cell componentpvFor
Wherein, UbrFor the avalanche breakdown voltage of diode, α, nn are avalanche breakdown characteristic constant, UpvPhotovoltaic battery elements
Output voltage, U 'pvFor the output voltage of photovoltaic cell component.
According to an embodiment of the present invention, the Simulink platforms based on MATLAB, according to the equivalent series resistance, etc.
Effect parallel resistance, equivalent diode P-N junction direction saturation current and output load current establish photovoltaic cell simulation model.
Second aspect of the present invention embodiment also provides a kind of photovoltaic cell Building of Simulation Model device for considering locally to shade,
It includes for realizing the above method, the device：
Parameter acquiring module, the standard parameter for obtaining photovoltaic cell；
First determines module, for determining the equivalent of photovoltaic cell simulation model according to the standard parameter of the photovoltaic cell
Series resistance, equivalent parallel resistance, P-N junction effects current and P-N junction effect reverse saturation current；
Second determine module, for according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current,
P-N junction effects current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine that the output of photovoltaic cell simulation model is negative
Carry electric current；
Model foundation module, for according to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction side
The photovoltaic cell simulation model for considering locally to shade is established to saturation current and output load current, wherein described etc.
Effect parallel resistance is in parallel with a reverse current source, a positive and negative interpolar bypass diode in parallel for photovoltaic cell component.
According to an embodiment of the present invention, the standard parameter of the photovoltaic cell includes：Open-circuit voltage, the light of photovoltaic cell
Raw electric current, photovoltaic cell load the voltage at both ends.
According to an embodiment of the present invention, the first determination module includes：
The standard parameter according to the photovoltaic cell determines the equivalent series resistance, equivalent of photovoltaic cell simulation model
Parallel resistance, P-N junction effects current and P-N junction effect reverse saturation current include：
Photogenerated current determination unit, for determining photogenerated current according to the standard parameter and following formula of the photovoltaic cell
Iph；
P-N junction effects current determination unit, for determining P-N according to the standard parameter and following formula of the photovoltaic cell
Tie effects current Id；
P-N junction effect reverse saturation current determination unit is used for the standard parameter according to the photovoltaic cell and following public affairs
Formula determines P-N junction effect reverse saturation current I0；
Series resistance determination unit, for determining series resistance according to the standard parameter and following formula of the photovoltaic cell
Rs；
Rs=R 's·Ns/Np
Parallel resistance determination unit, for determining parallel resistance according to the standard parameter and following formula of the photovoltaic cell
Rsh；
Rsh=R 'sh·Ns/Np
Wherein, IscFor photovoltaic cell short circuit current, S0To refer to light intensity, Id0For the reversed saturation resistance of equivalent P-N junction, T0
For reference temperature, CtFor temperature coefficient, EgFor the energy gap of semi-conducting material, k is Boltzmann constant, and A is diode quality
The factor, q are charge coefficient, R 'sFor the series resistance of photovoltaic cell, NsFor the series connection number of photovoltaic cell, R 'shFor photovoltaic cell
Parallel resistance, NpFor the number of parallel of photovoltaic cell.
According to an embodiment of the present invention, described second determine that module is used for according to the standard parameter, equivalent series electricity
Resistance, equivalent parallel resistance, photogenerated current, P-N junction effects current, P-N junction effect reverse saturation current and avalanche breakdown voltage are true
Determine the output load current of photovoltaic cell simulation model and following formula determines the output current I of photovoltaic battery elementspvAnd photovoltaic electric
The output current I ' of pond grouppv；
Wherein, UbrFor the avalanche breakdown voltage of diode, α, nn are avalanche breakdown characteristic constant, UpvPhotovoltaic battery elements
Output voltage, U 'pvFor the output voltage of photovoltaic cell component.
According to an embodiment of the present invention, the model foundation module is used for the Simulink platform roots based on MATLAB
It is built according to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction direction saturation current and output load current
Vertical photovoltaic cell simulation model.
Implement having the advantages that for the embodiment of the present invention：
(1) the method for the embodiment of the present invention and device can be effectively prevented from the case that locally shading photovoltaic cell by
In the avalanche breakdown problem that hot spot effect generates, the delivery efficiency of photovoltaic cell is improved, while extending making for photovoltaic cell
Use the service life；
(2) the method for the embodiment of the present invention and device make the mathematical model of photovoltaic cell more complete, phantom error
It is small, when carrying out photovoltaic industry research, then closer to the actual needs of engineering.
(3) embodiment of the present invention considers that the photovoltaic cell equivalent-circuit model under the shading of part is in traditional equivalent circuit mould
A reverse current source in parallel on the basis of type so that overall output does not have the characteristic of Multi-maximum point, is advantageously implemented photovoltaic
Battery maximum power tracing.
(4) photovoltaic cell is wrecked the embodiment of the present invention due to hot spot effect in order to prevent, in photovoltaic cell component
A positive and negative interpolar bypass diode in parallel, consumed to avoid the component that energy is masked caused by illumination component.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is to consider the photovoltaic cell Building of Simulation Model method flow diagram locally to shade described in the embodiment of the present invention；
Fig. 2 is to consider the photovoltaic cell equivalent-circuit model schematic diagram locally to shade described in the embodiment of the present invention；
The photovoltaic cell Building of Simulation Model schematic device locally shaded is considered described in Fig. 3 embodiment of the present invention.
Specific implementation mode
In being described below, for illustration and not for limitation, it is proposed that such as tool of particular system structure, technology etc
Body details understands the embodiment of the present invention to cut thoroughly.However, it will be clear to one skilled in the art that there is no these specific
The present invention can also be realized in the other embodiments of details.In other situations, it omits to well-known system, device, electricity
The detailed description of road and method, in case unnecessary details interferes description of the invention.
In order to illustrate technical solutions according to the invention, illustrated below by specific embodiment combination attached drawing.
As shown in Figure 1, the embodiment of the present invention proposes a kind of photovoltaic cell Building of Simulation Model method for considering locally to shade,
Described method includes following steps：
Step S100 obtains the standard parameter of photovoltaic cell；
Step S200 determines the equivalent series electricity of photovoltaic cell simulation model according to the standard parameter of the photovoltaic cell
Resistance, equivalent parallel resistance, P-N junction effects current and P-N junction effect reverse saturation current；
Step S300 is imitated according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current, P-N junction
Induced current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine the output load current of photovoltaic cell simulation model；
Step S400 is saturated electricity according to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction direction
Stream and output load current establish the photovoltaic cell simulation model for considering locally to shade, the equivalent parallel resistance and one
Reverse current source is in parallel, a positive and negative interpolar bypass diode in parallel for photovoltaic cell component.
The present embodiment mainly a reverse current source in parallel, the reverse current on the basis of traditional equivalent-circuit model
Source can provide a compensation electric current for the photovoltaic cell under shadow occlusion, and size is equal to be blocked battery and normal battery work
Make difference between currents so that overall output does not have the characteristic of Multi-maximum point, is advantageously implemented maximum power of photovoltaic cell tracking.Together
When in order to prevent photovoltaic cell wrecked due to hot spot effect, in the bypass in parallel of the positive and negative interpolar of photovoltaic cell component
Diode consumes to avoid the component that energy is masked caused by illumination component.When uniform illumination, at bypass diode
In reversed cut-off, electric array normal work；When uneven illumination is even, bypass diode conducting protects photovoltaic cell not to be reversed snow
Electric current breakdown is collapsed, and improves delivery efficiency.The photovoltaic cell equivalent-circuit model for considering locally to shade is had studied in the lab
Output characteristics.
Wherein, in step S100, the open-circuit voltage U of the photovoltaic cell photovoltaic celloc, short circuit current Isc, design parameter
It is referred to table 1.
1 photovoltaic cell equivalent model parameter of table
Wherein, in step S200, the standard parameter according to the photovoltaic cell determines photovoltaic cell simulation model
Equivalent series resistance, equivalent parallel resistance, P-N junction effects current and P-N junction effect reverse saturation current include：
The I of photogenerated currentphFor
P-N junction effects current IdFor
P-N junction effect reverse saturation current I0For
Series resistance RsFor
Rs=R 's·Ns/Np
Parallel resistance RshFor
Rsh=R 'sh·Ns/Np
Wherein, S0To refer to light intensity, Id0For the reversed saturation resistance of equivalent P-N junction, T0For reference temperature, CtFor temperature system
Number, EgFor the energy gap of semi-conducting material, k is Boltzmann constant, and A is diode quality factor, and q is charge coefficient, R 's
For the series resistance of photovoltaic cell, NsFor the series connection number of photovoltaic cell, R 'shFor the parallel resistance of photovoltaic cell, NpFor photovoltaic
The number of parallel of battery.
Wherein, described according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photoproduction electricity in step S300
Stream, P-N junction effects current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine the defeated of photovoltaic cell simulation model
Going out load current includes：
The output current I of photovoltaic battery elementspvFor
The output current I ' of photovoltaic cell componentpvFor
Wherein, UbrFor the avalanche breakdown voltage of diode, α, nn are avalanche breakdown characteristic constant, UpvPhotovoltaic battery elements
Output voltage, U 'pvFor the output voltage of photovoltaic cell component.
Wherein, in step S400, Simulink platform of the method based on MATLAB, according to equivalent series electricity
Resistance, equivalent parallel resistance, equivalent diode P-N junction direction saturation current and output load current establish photovoltaic cell emulation mould
Type, the photovoltaic cell simulation model is specific as shown in Fig. 2, in figure, IphFor photogenerated current, value is proportional to the area of photovoltaic cell
With the intensity of illumination of incident light；I is the load current of photovoltaic cell output；UpvTo load the voltage at both ends；In the case of no light,
The basic act characteristic of photovoltaic cell is similar to a general-purpose diode, UdIndicate the terminal voltage of equivalent diode, IdTo flow through two
The electric current of pole pipe；Equivalent series resistance R in circuitsBy the bulk resistor of battery, sheet resistance, electrode conductor resistance, electrode and silicon
The compositions such as interfacial contact resistance and metallic conductor resistance；Equivalent parallel resistance RshIt is lacked by battery surface dirt and semiconductor crystal
The compositions such as the leak resistance of P-N junction leak resistance and battery edge corresponding to leakage current caused by falling into.In general, high-quality
Silicon wafer 1cm2RsAbout between 7.7~15.3m Ω, RshBetween 200~300 Ω.
In addition, as shown in figure 3, the embodiment of the present invention additionally provides what a kind of consideration corresponding with the above method was locally shaded
Photovoltaic cell Building of Simulation Model device, for realizing the above method, described device includes：
Parameter acquiring module, the standard parameter for obtaining photovoltaic cell；
First determines module, for determining the equivalent of photovoltaic cell simulation model according to the standard parameter of the photovoltaic cell
Series resistance, equivalent parallel resistance, P-N junction effects current and P-N junction effect reverse saturation current；
Second determine module, for according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current,
P-N junction effects current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine that the output of photovoltaic cell simulation model is negative
Carry electric current；
Model foundation module, for according to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction side
The photovoltaic cell simulation model for considering locally to shade is established to saturation current and output load current, wherein described etc.
Effect parallel resistance is in parallel with a reverse current source, a positive and negative interpolar bypass diode in parallel for photovoltaic cell component.
Wherein, the standard parameter of the photovoltaic cell includes：Open-circuit voltage, photogenerated current, the photovoltaic cell of photovoltaic cell
Load the voltage at both ends.
Wherein, the first determination module includes：
The standard parameter according to the photovoltaic cell determines the equivalent series resistance, equivalent of photovoltaic cell simulation model
Parallel resistance, P-N junction effects current and P-N junction effect reverse saturation current include：
Photogenerated current determination unit, for determining photogenerated current according to the standard parameter and following formula of the photovoltaic cell
Iph；
P-N junction effects current determination unit, for determining P-N according to the standard parameter and following formula of the photovoltaic cell
Tie effects current Id；
P-N junction effect reverse saturation current determination unit is used for the standard parameter according to the photovoltaic cell and following public affairs
Formula determines P-N junction effect reverse saturation current I0；
Series resistance determination unit, for determining series resistance according to the standard parameter and following formula of the photovoltaic cell
Rs；
Rs=R 's·Ns/Np
Parallel resistance determination unit, for determining parallel resistance according to the standard parameter and following formula of the photovoltaic cell
Rsh；
Rsh=R 'sh·Ns/Np
Wherein, S0To refer to light intensity, Id0For the reversed saturation resistance of equivalent P-N junction, T0For reference temperature, CtFor temperature system
Number, EgFor the energy gap of semi-conducting material, k is Boltzmann constant, and A is diode quality factor, and q is charge coefficient, R 's
For the series resistance of photovoltaic cell, NsFor the series connection number of photovoltaic cell, R 'shFor the parallel resistance of photovoltaic cell, NpFor photovoltaic
The number of parallel of battery.
Wherein, it is described second determine module be used for according to the standard parameter, equivalent series resistance, equivalent parallel resistance,
Photogenerated current, P-N junction effects current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine that photovoltaic cell emulates mould
The output load current of type and following formula determine the output current I of photovoltaic battery elementspvWith the output current of photovoltaic cell group
I′pv；
Wherein, UbrFor the avalanche breakdown voltage of diode；α, nn are avalanche breakdown characteristic constant, and α, nn value are with reference to specific
The parameter that manufacturer provides；UpvThe output voltage of photovoltaic battery elements；U′pvFor the output voltage of photovoltaic cell component.
Wherein, the model foundation module, for the Simulink platforms based on MATLAB according to equivalent series electricity
Resistance, equivalent parallel resistance, equivalent diode P-N junction direction saturation current and output load current establish the engineering of photovoltaic cell
Simplify simulation model, simulate photovoltaic module output characteristics, provides fundamental basis for photovoltaic industry production.
For device embodiments, since it corresponds to above method embodiment, so related place is referring to method reality
Apply the part explanation of example.
As can be seen from the above description, implement having the advantages that for the embodiment of the present invention：
(1) the method for the embodiment of the present invention and device can be effectively prevented from the case that locally shading photovoltaic cell by
In the avalanche breakdown problem that hot spot effect generates, the delivery efficiency of photovoltaic cell is improved, while extending making for photovoltaic cell
Use the service life；
(2) the method for the embodiment of the present invention and device make the mathematical model of photovoltaic cell more complete, phantom error
It is small, when carrying out photovoltaic industry research, then closer to the actual needs of engineering.
(3) embodiment of the present invention considers that the photovoltaic cell equivalent-circuit model under the shading of part is in traditional equivalent circuit mould
A reverse current source in parallel on the basis of type.The reverse current source can provide a benefit for the photovoltaic cell under shadow occlusion
Electric current is repaid, size is equal to the difference of be blocked battery and normal battery operating current so that overall output does not have Multi-maximum point
Characteristic, be advantageously implemented maximum power of photovoltaic cell tracking.
(4) photovoltaic cell is wrecked the embodiment of the present invention due to hot spot effect in order to prevent, in photovoltaic cell component
A positive and negative interpolar bypass diode in parallel, consumed to avoid the component that energy is masked caused by illumination component.
When uniform illumination, bypass diode is in reversed cut-off, photovoltaic array normal work；When uneven illumination is even, bypass diode is led
It is logical, protect photovoltaic cell not to be reversed avalanche current breakdown, and improve delivery efficiency.
Part not deployed in method and its device, can refer to the method and its dress of above example in the embodiment of the present invention
The corresponding part set, is no longer developed in details herein.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (10)
1. a kind of photovoltaic cell Building of Simulation Model method for considering locally to shade, which is characterized in that the method includes as follows
Step：
Obtain the standard parameter of photovoltaic cell；
Equivalent series resistance, the equivalent parallel electricity of photovoltaic cell simulation model are determined according to the standard parameter of the photovoltaic cell
Resistance, P-N junction effects current and P-N junction effect reverse saturation current；
According to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current, P-N junction effects current, P-N junction effect
Reverse saturation current and avalanche breakdown voltage is answered to determine the output load current of photovoltaic cell simulation model；
According to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction direction saturation current and output loading
Electric current establishes the photovoltaic cell simulation model for considering locally to shade, and the equivalent parallel resistance and a reverse current source are simultaneously
Connection, a positive and negative interpolar bypass diode in parallel for photovoltaic cell component.
2. considering the photovoltaic cell Building of Simulation Model method locally shaded as described in claim 1, which is characterized in that described
The standard parameter of photovoltaic cell includes：The open-circuit voltage U of photovoltaic celloc, short circuit current Isc, design parameter is referred to table 1.
3. considering the photovoltaic cell Building of Simulation Model method locally shaded as claimed in claim 2, which is characterized in that described
The equivalent series resistance, equivalent parallel resistance, P-N of photovoltaic cell simulation model are determined according to the standard parameter of the photovoltaic cell
Knot effects current and P-N junction effect reverse saturation current include：
The I of photogenerated currentphFor
P-N junction effects current IdFor
P-N junction effect reverse saturation current I0For
Series resistance RsFor
Rs=R 's·Ns/Np
Parallel resistance RshFor
Rsh=R 'sh·Ns/Np
Wherein, IscFor the short circuit current of photovoltaic cell, UdFor the voltage at diode both ends, S0To refer to light intensity, Id0For equivalent P-N
The reversed saturation resistance of knot, T0For reference temperature, CtFor temperature coefficient, EgFor the energy gap of semi-conducting material, k be Bohr hereby
Graceful constant, A are diode quality factor, and q is charge coefficient, R 'sFor the series resistance of photovoltaic cell, NsFor the string of photovoltaic cell
Join number, R 'shFor the parallel resistance of photovoltaic cell, NpFor the number of parallel of photovoltaic cell.
4. considering the photovoltaic cell Building of Simulation Model method locally shaded as claimed in claim 3, which is characterized in that described
It is anti-according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current, P-N junction effects current, P-N junction effect
Determine that the output load current of photovoltaic cell simulation model includes to saturation current and avalanche breakdown voltage：
The output current I of photovoltaic battery elementspvFor
The output current I ' of photovoltaic cell componentpvFor
Wherein, UbrFor the avalanche breakdown voltage of diode, α, nn are avalanche breakdown characteristic constant, UpvThe output electricity of photovoltaic battery elements
Pressure, U 'pvFor the output voltage of photovoltaic cell component.
5. considering the photovoltaic cell Building of Simulation Model method locally shaded as claimed in claim 4, which is characterized in that be based on
The Simulink platforms of MATLAB, it is full according to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction direction
Photovoltaic cell simulation model is established with electric current and output load current.
6. a kind of considering the photovoltaic cell Building of Simulation Model device that locally shades, which is characterized in that the device includes：
Parameter acquiring module, the standard parameter for obtaining photovoltaic cell；
First determines module, the equivalent series for determining photovoltaic cell simulation model according to the standard parameter of the photovoltaic cell
Resistance, equivalent parallel resistance, P-N junction effects current and P-N junction effect reverse saturation current；
Second determines module, for according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current, P-N
Knot effects current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine the output loading of photovoltaic cell simulation model
Electric current；
Model foundation module, for full according to the equivalent series resistance, equivalent parallel resistance, equivalent diode P-N junction direction
Established with electric current and output load current and described consider the photovoltaic cell simulation model that locally shades, wherein it is described it is equivalent simultaneously
Connection resistance is in parallel with a reverse current source, a positive and negative interpolar bypass diode in parallel for photovoltaic cell component.
7. the photovoltaic cell Building of Simulation Model device locally to shade is considered as claimed in claim 6, which is characterized in that institute
The standard parameter for stating photovoltaic cell includes：The open-circuit voltage U of photovoltaic celloc, short circuit current Isc, design parameter is referred to table
1。
8. considering the photovoltaic cell Building of Simulation Model device locally to shade as claimed in claim 6, which is characterized in that described
First determines that module includes：
The standard parameter according to the photovoltaic cell determines the equivalent series resistance of photovoltaic cell simulation model, equivalent parallel
Resistance, P-N junction effects current and P-N junction effect reverse saturation current include：
Photogenerated current determination unit, for determining photogenerated current I according to the standard parameter and following formula of the photovoltaic cellph；
P-N junction effects current determination unit, for determining that P-N junction is imitated according to the standard parameter and following formula of the photovoltaic cell
Induced current Id；
P-N junction effect reverse saturation current determination unit, for true according to the standard parameter and following formula of the photovoltaic cell
Determine P-N junction effect reverse saturation current I0；
Series resistance determination unit, for determining series resistance R according to the standard parameter and following formula of the photovoltaic cells；
Rs=R 's·Ns/Np
Parallel resistance determination unit, for determining parallel resistance R according to the standard parameter and following formula of the photovoltaic cellsh；
Rsh=R 'sh·Ns/Np
Wherein, IscFor the short circuit current of photovoltaic cell, UdFor the voltage at diode both ends, S0To refer to light intensity, Id0For equivalent P-N
The reversed saturation resistance of knot, T0For reference temperature, CtFor temperature coefficient, EgFor the energy gap of semi-conducting material, k be Bohr hereby
Graceful constant, A are diode quality factor, and q is charge coefficient, R 'sFor the series resistance of photovoltaic cell, NsFor the string of photovoltaic cell
Join number, R 'shFor the parallel resistance of photovoltaic cell, NpFor the number of parallel of photovoltaic cell.
9. considering the photovoltaic cell Building of Simulation Model device locally to shade as claimed in claim 8, which is characterized in that described
Second determines that module is used for according to the standard parameter, equivalent series resistance, equivalent parallel resistance, photogenerated current, P-N junction effect
Electric current, P-N junction effect reverse saturation current and avalanche breakdown voltage determine photovoltaic cell simulation model output load current and
Following formula determines the output current I of photovoltaic battery elementspvWith the output current I ' of photovoltaic cell grouppv；
Wherein, UbrFor the avalanche breakdown voltage of diode, α,nnFor avalanche breakdown characteristic constant, UpvThe output electricity of photovoltaic battery elements
Pressure, U 'pvFor the output voltage of photovoltaic cell component.
10. considering the photovoltaic cell Building of Simulation Model device locally to shade as claimed in claim 9, which is characterized in that institute
State model foundation module, for the Simulink platforms based on MATLAB according to the equivalent series resistance, equivalent parallel resistance,
Equivalent diode P-N junction direction saturation current and output load current establish photovoltaic cell simulation model.
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