CN108650785A - Touchscreen pattern conducting wire and its forming method - Google Patents
Touchscreen pattern conducting wire and its forming method Download PDFInfo
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- CN108650785A CN108650785A CN201810322887.4A CN201810322887A CN108650785A CN 108650785 A CN108650785 A CN 108650785A CN 201810322887 A CN201810322887 A CN 201810322887A CN 108650785 A CN108650785 A CN 108650785A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 69
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 claims abstract description 59
- 239000010949 copper Substances 0.000 claims abstract description 59
- 239000002070 nanowire Substances 0.000 claims abstract description 54
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 37
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 37
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910000077 silane Inorganic materials 0.000 claims abstract description 25
- 238000002444 silanisation Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 22
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- 239000002994 raw material Substances 0.000 claims description 28
- -1 polyethylene Polymers 0.000 claims description 23
- 239000004698 Polyethylene Substances 0.000 claims description 21
- 229920000573 polyethylene Polymers 0.000 claims description 21
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229960004275 glycolic acid Drugs 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 102000004316 Oxidoreductases Human genes 0.000 claims description 6
- 108090000854 Oxidoreductases Proteins 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 229920000877 Melamine resin Polymers 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000001476 alcoholic effect Effects 0.000 claims 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000002131 composite material Substances 0.000 abstract 1
- 239000011378 shotcrete Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 22
- 238000002360 preparation method Methods 0.000 description 20
- 239000001993 wax Substances 0.000 description 19
- 238000003756 stirring Methods 0.000 description 16
- 239000008367 deionised water Substances 0.000 description 14
- 229910021641 deionized water Inorganic materials 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 12
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- 239000006185 dispersion Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 239000012065 filter cake Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 6
- 239000003643 water by type Substances 0.000 description 6
- 206010013786 Dry skin Diseases 0.000 description 4
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 238000004108 freeze drying Methods 0.000 description 3
- 229910001437 manganese ion Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 235000010344 sodium nitrate Nutrition 0.000 description 3
- 239000004317 sodium nitrate Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical class S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 239000006228 supernatant Substances 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention relates to touch screen technology fields, more particularly to touchscreen pattern conducting wire and its forming method, conducting wire includes from inside to outside including silane carbon nano tube bottom, copper nano-wire middle layer and nitrogen-doped graphene outer layer, forming method is to spray silanization carbon nanotube ink, copper nano-wire ink and nitrogen-doped graphene ink on base material successively using gunite, is formed by curing conducting wire.The present invention uses composite layer conducting wire, and carbon nanotube, copper nano-wire and nitrogen-doped graphene are combined, the resistance of conducting wire is reduced, improve conductivity, and nitrogen-doped graphene coats copper nano-wire, and copper nano-wire is made to be not easy to be corroded, aoxidize, and improves the service life of conducting wire.
Description
Technical field
The present invention relates to touch screen technology field more particularly to touchscreen pattern conducting wire and its forming methods.
Background technology
Touch screen is also known as " touch screen ", " touch panel ", is a kind of induction type liquid of the input signals such as receivable contact
Crystal device, when contacting the graphic button on screen, the haptic feedback system on screen can be according to the journey of preprogramming
Formula drives various connection devices, is substituted for mechanical push button panel, and produces by liquid crystal display picture lively
Visual and sound effects.Touch screen technology as it is a kind of at present it is most simple, conveniently, natural man-machine interaction mode is by the universal of the whole world
Pay attention to, and is widely used in industry-by-industry.
It is leading that current existing transparent conductive film, which is with transparent conductive film, it has good conductive property
And film transmission rate.But due to the intrinsic brittleness of ito thin film itself, expensive deposition manufacture process and indium it is increasingly in short supply, greatly
The earth limits application of the ito thin film in field of flexible display.Therefore emerging transparent conductive film such as carbon nanotube, graphite
Alkene, conducting polymer, metal grill and metal nanometer line progress into the visual field of people.And these are with flexibility characteristics
In material, the transparent conductive film based on nano silver wire, due to having both excellent bending resistance, electric conductivity and high transmittance, together
When film forming can also be realized by way of solwution method processing procedure and inkjet printing, be more concerned for other conductive films,
But nano silver wire has that electronics is easy to migrate as conducting wire.The electrical properties of gold are stablized relatively, but metallographic pair
It is rare, use gold as the conducting wire of touch screen, cost is excessively high, is unfavorable for volume production.Copper can also be used as the conductor wire of touch screen
Road, but the property of copper is extremely unstable, is oxidized easily, to improve resistance.
Invention content
In view of this, the object of the present invention is to provide touchscreen pattern conducting wire and its forming method, use is compound
Layer conducting wire, carbon nanotube, copper nano-wire and nitrogen-doped graphene are combined, the resistance of conducting wire is reduced, improves
Conductivity, and nitrogen-doped graphene coats copper nano-wire, so that copper nano-wire is not easy to be corroded, aoxidized, improves conducting wire
Service life.
The present invention solves above-mentioned technical problem by following technological means：
Touchscreen pattern conducting wire, the conducting wire include silane carbon nano tube bottom, Tong Na from inside to outside
Rice noodles middle layer and nitrogen-doped graphene outer layer.
Nitrogen-atoms and carbon atom have similar atomic radius, and N doping can be used as electron donor in graphene, from
And show superior electric conductivity；Copper nano-wire is set between silane carbon nano tube and nitrogen-doped graphene, it can
Avoid the problem that resistance increases, conductivity reduces caused by copper aoxidizes, it is thus also avoided that nano silver wire has electricity as conducting wire
Son problem easy to migrate.
Further, the nitrogen content in the nitrogen-doped graphene outer layer is 4.0~5.0%, outside the nitrogen-doped graphene
Layer is in tridimensional network.
In addition, the invention also discloses the forming method of above-mentioned touchscreen pattern conducting wire, include the following steps：
Base material cleans：After taking base material successively to carry out neutral washing, non-contact AP cleanings, conducting wire figure is drawn on base material
Shape；
The formation of silane carbon nano tube bottom：Using the piezoelectric type nozzle for adding piezoelectric ceramics on nozzle, to base material
Upper injection silanization carbon nanotube ink sprays once along conductive circuit pattern, is subsequently placed at 70~75 DEG C of baking 3min, shape
At silane carbon nano tube bottom；
The formation of copper nano-wire middle layer：Copper nano-wire ink is sprayed on base material using piezoelectric type nozzle, along silane
Carbon nano tube bottom sprays twice, is subsequently placed at 73~76 DEG C of baking 3min, then carry out flash of light sintering, is formed in copper nano-wire
Interbed；
The formation of nitrogen-doped graphene outer layer：Continue to spray nitrogen-doped graphene oil on base material using piezoelectric type nozzle
Ink twice along the injection of copper nano-wire middle layer is subsequently placed at 75~80 DEG C of baking 3min, forms nitrogen-doped graphene outer layer,
Form pattern conductive circuit.
Further, the silanization carbon nanotube ink includes following raw material：50~60wt% of silane carbon nano tube, gather
3~5wt% of ethylene waxes, aqueous isopropanol surplus.
Further, the silane carbon nano tube be with nitric acid and silane coupling agent successively to Carbon Nanotube Array into
The processing of row acid oxidase and silylating reagent processing.
Further, the copper nano-wire ink includes following raw material：55~65wt% of copper nano-wire, polyethylene wax 2~
4wt%, 1~3wt% of hydroxyacetic acid, aqueous isopropanol surplus.
Further, a diameter of 55~75nm of the copper nano-wire, length are 0.5~1.5 μm.
Further, the nitrogen-doped graphene ink includes following raw material：50~60wt% of nitrogen-doped graphene, polyethylene
3~5wt% of wax, aqueous isopropanol surplus.
Further, the nitrogen-doped graphene is using graphene oxide as raw material, and melamine is reducing agent and N doping
Agent is prepared by hydro-thermal method.
Graphene is most thin in the world two-dimensional material, has large specific surface area, the excellent and high carrier of electric property
The advantages that mobility, but the graphene chemical property of structural integrity is sufficiently stable, surface does not have any group, shows inertia
State；And nitrogen-atoms has similar atomic radius with carbon atom, and electron donor is can be used as after nitrogen atom doping, improves graphene
Electric conductivity.
Beneficial effects of the present invention：The present invention's arrives electric line collection silane carbon nano tube, copper nano-wire and N doping stone
Black alkene strengthens the fastness that conducting wire is bonded with base material in one, by silane carbon nano tube, is received by silanization carbon
Mitron and nitrogen-doped graphene carry out cladding protection to copper nano-wire, and copper nano-wire is avoided to aoxidize, and extend its service life, and silicon
Alkanisation carbon nanotube and nitrogen-doped graphene all have good electric conductivity, further increase the electric conductivity of conducting wire.
Specific implementation mode
Below with reference to specific embodiment, the present invention is described in detail：
The touchscreen pattern conducting wire of the present invention includes in silane carbon nano tube bottom, copper nano-wire from inside to outside
Interbed and nitrogen-doped graphene outer layer, wherein the nitrogen content in nitrogen-doped graphene outer layer is 4.0~5.0%, N doping graphite
Alkene outer layer is in tridimensional network.
Embodiment one
The preparation of silane carbon nano tube:1g multi-walled carbon nanotubes are taken to be scattered in 250mL concentrated nitric acids, ultrasonic wave dispersion
30min carries out mixed liquor at 130 DEG C to be stirred continuously reflux 3h, and obtained suspension is filtered, the multi wall aoxidized
Carbon nanotube；It is cleaned each 3 times with deionized water and ethyl alcohol, is detached with centrifuge, be dried in vacuo for 24 hours, obtain at 130 DEG C
The carbon nanotube of acid oxidase；The sodium dodecyl sulfate solution that 3g/L is prepared with deionized water, takes the carbon nanometer of 1.5g acid oxidases
Pipe is scattered in 200mL sodium dodecyl sulfate solutions, ultrasonic 3h, is centrifuged, and deionized water and ethyl alcohol is used in combination to clean each 3
Secondary, the solid being centrifugally separating to obtain is scattered in ultrasound 30min in 250mL ethyl alcohol after 100 DEG C of dryings for 24 hours, and it is even that 3g silane is added
Join agent, be stirred continuously in 75 DEG C and the 5h that flows back, after the reaction was complete, with deionized water and ethyl alcohol clean it is each 3 times, centrifuge consolidate
Body for 24 hours, obtains silane carbon nano tube in 100 DEG C of dryings.
The preparation of silanization carbon nanotube ink：Silanization carbon nanotube ink includes following raw material：Silanization carbon nanometer
Pipe 50wt%, polyethylene wax 3wt%, aqueous isopropanol surplus, above-mentioned raw materials are mixed, and stirring 1h just obtains silanization carbon nanometer
Pipe ink.
The preparation of copper nano-wire ink：Copper nano-wire ink includes following raw material：Copper nano-wire 55wt%, polyethylene wax
2%, hydroxyacetic acid 1wt%, aqueous isopropanol surplus, wherein a diameter of 55~75nm of copper nano-wire, length are 0.5~1.5
μm.Copper nano-wire, polyethylene wax, hydroxyacetic acid and aqueous isopropanol are stirred and evenly mixed, copper nano-wire ink is just obtained.
The preparation of nitrogen-doped graphene：It weighs stirring under 5g graphite, 1.5g sodium nitrate condition of ice bath and the 200mL concentrated sulfuric acids is added
In, 10min is stirred, 4g potassium permanganates stirring 3h is added, then is placed in 35 DEG C of stirred in water bath 3h, deionized water is added, rises
Temperature stirs 0.5h to 95 DEG C, and 720mL deionized waters are added and stir 15h, 80mL hydrogen peroxide is added, filters, filter cake is dissolved in
It in 1000mL5mol/L hydrochloric acid, filters and removes manganese ion, repeat to use 1000mLL5mol/L salt acid elution 3 times, then filter cake is dissolved
In 2000mL deionized waters, 1 day is stood, outwells supernatant, deionized water is added, water 10 times or so is changed in repetition until solution
PH value be more than 4, ultrasonic 10min, centrifuge, obtain graphene oxide dispersion.Melamine is taken to be dissolved in ethyl alcohol and go
In ionized water, the graphene oxide dispersion of 6mg/mL is added, 15h is reacted in 150 DEG C of autoclave, takes out washing into
Property, freeze-drying obtains nitrogen-doped graphene.Nitrogen content is 4.0% in graphene in the present embodiment.
The preparation of nitrogen-doped graphene ink：Nitrogen-doped graphene ink includes following raw material：Nitrogen-doped graphene
50wt%, polyethylene wax 3wt%, aqueous isopropanol surplus.Above-mentioned raw materials are mixed to uniformly, nitrogen-doped graphene is obtained
Ink.
The forming method of the touchscreen pattern conducting wire of the present embodiment is as follows：
Base material cleans：After taking base material successively to carry out neutral washing, non-contact AP cleanings, conducting wire figure is drawn on base material
Shape；
The formation of silane carbon nano tube bottom：Using the piezoelectric type nozzle for adding piezoelectric ceramics on nozzle, to base material
Upper injection silanization carbon nanotube ink sprays once along conductive circuit pattern, is subsequently placed at 70~75 DEG C of baking 3min, shape
At silane carbon nano tube bottom；
The formation of copper nano-wire middle layer：Copper nano-wire ink is sprayed on base material using piezoelectric type nozzle, along silane
Carbon nano tube bottom sprays twice, is subsequently placed at 73~76 DEG C of baking 3min, then carry out flash of light sintering, is formed in copper nano-wire
Interbed；
The formation of nitrogen-doped graphene outer layer：Continue to spray nitrogen-doped graphene oil on base material using piezoelectric type nozzle
Ink twice along the injection of copper nano-wire middle layer is subsequently placed at 75~80 DEG C of baking 3min, forms nitrogen-doped graphene outer layer,
Form pattern conductive circuit.
Embodiment two
The preparation of silane carbon nano tube is the same as embodiment one.
The preparation of silanization carbon nanotube ink：Silanization carbon nanotube ink includes following raw material：Silanization carbon nanometer
Pipe 54wt%, polyethylene wax 4.5wt%, aqueous isopropanol surplus, above-mentioned raw materials are mixed, and stirring 1h just obtains silanization carbon and receives
Mitron ink.
The preparation of copper nano-wire ink：Copper nano-wire ink includes following raw material：Copper nano-wire 62wt%, polyethylene wax
2.5wt%, hydroxyacetic acid 2wt%, aqueous isopropanol surplus, wherein a diameter of 55~75nm of copper nano-wire, length 0.5
~1.5 μm.Copper nano-wire, polyethylene wax, hydroxyacetic acid and aqueous isopropanol are stirred and evenly mixed, copper nano-wire ink is just obtained.
The preparation of nitrogen-doped graphene is the same as embodiment one.
The preparation of nitrogen-doped graphene ink：Nitrogen-doped graphene ink includes following raw material：Nitrogen-doped graphene
50wt%, polyethylene wax 4.5wt%, aqueous isopropanol surplus.Above-mentioned raw materials are mixed to uniformly, N doping graphite is obtained
Alkene ink.
The forming method of the touchscreen pattern conducting wire of the present embodiment is the same as embodiment one.
Embodiment three
The preparation of silane carbon nano tube:0.5g multi-walled carbon nanotubes are taken to be scattered in 250mL concentrated nitric acids, ultrasonic wave dispersion
30min carries out mixed liquor at 130 DEG C to be stirred continuously reflux 3h, and obtained suspension is filtered, the multi wall aoxidized
Carbon nanotube；It is cleaned each 3 times with deionized water and ethyl alcohol, is detached with centrifuge, be dried in vacuo for 24 hours, obtain at 130 DEG C
The carbon nanotube of acid oxidase；The sodium dodecyl sulfate solution that 5g/L is prepared with deionized water, takes the carbon nanotube of 3g acid oxidases
It is scattered in 200mL sodium dodecyl sulfate solutions, ultrasonic 4h, centrifuges, deionized water and ethyl alcohol is used in combination to clean each 3 times,
The solid being centrifugally separating to obtain is scattered in ultrasound 30min in 250mL ethyl alcohol after 100 DEG C of dryings for 24 hours, and it is silane coupled that 5g is added
Agent, is stirred continuously and the 5h that flows back in 75 DEG C, and after the reaction was complete, each solid 3 times, centrifuged is cleaned with deionized water and ethyl alcohol
For 24 hours in 100 DEG C of dryings, silane carbon nano tube is obtained.
The preparation of silanization carbon nanotube ink：Silanization carbon nanotube ink includes following raw material：Silanization carbon nanometer
Pipe 58wt%, polyethylene wax 4wt%, aqueous isopropanol surplus, above-mentioned raw materials are mixed, and stirring 2h just obtains silanization carbon nanometer
Pipe ink.
The preparation of copper nano-wire ink：Copper nano-wire ink includes following raw material：Copper nano-wire 60wt%, polyethylene wax
3wt%, hydroxyacetic acid 2wt%, aqueous isopropanol surplus, wherein a diameter of 55~75nm of copper nano-wire, length be 0.5~
1.5μm.Copper nano-wire, polyethylene wax, hydroxyacetic acid and aqueous isopropanol are stirred and evenly mixed, copper nano-wire ink is just obtained.
The preparation of nitrogen-doped graphene：It weighs stirring under 5g graphite, 1g sodium nitrate condition of ice bath and the 200mL concentrated sulfuric acids is added
In, 10min is stirred, 6g potassium permanganates stirring 3h is added, then is placed in 35 DEG C of stirred in water bath 3h, deionized water is added, rises
Temperature stirs 1h to 95 DEG C, and 720mL deionized waters are added and stir 10h, 80mL hydrogen peroxide is added, filters, filter cake is dissolved in
It in 1000mL5mol/L hydrochloric acid, filters and removes manganese ion, repeat to use 1000mLL5mol/L salt acid elution 3 times, then filter cake is dissolved
In 2000mL deionized waters, 1 day is stood, outwells supernatant, deionized water is added, water 10 times or so is changed in repetition until solution
PH value be more than 4, ultrasonic 10min, centrifuge, obtain graphene oxide dispersion.Melamine is taken to be dissolved in ethyl alcohol and go
In ionized water, the graphene oxide dispersion of 6mg/mL is added, 10h is reacted in 200 DEG C of autoclave, takes out washing into
Property, freeze-drying obtains nitrogen-doped graphene.Nitrogen content is 4.5% in graphene in the present embodiment.
The preparation of nitrogen-doped graphene ink：Nitrogen-doped graphene ink includes following raw material：Nitrogen-doped graphene
55wt%, polyethylene wax 4wt%, aqueous isopropanol surplus.Above-mentioned raw materials are mixed to uniformly, nitrogen-doped graphene is obtained
Ink.
The forming method of the touchscreen pattern conducting wire of the present embodiment is the same as embodiment one.
Example IV
The preparation of silane carbon nano tube is the same as embodiment three.
The preparation of silanization carbon nanotube ink：Silanization carbon nanotube ink includes following raw material：Silanization carbon nanometer
Pipe 60wt%, polyethylene wax 5wt%, aqueous isopropanol surplus, above-mentioned raw materials are mixed, and stirring 2h just obtains silanization carbon nanometer
Pipe ink.
The preparation of copper nano-wire ink：Copper nano-wire ink includes following raw material：Copper nano-wire 65wt%, polyethylene wax
4wt%, hydroxyacetic acid 3wt%, aqueous isopropanol surplus, wherein a diameter of 55~75nm of copper nano-wire, length be 0.5~
1.5μm.Copper nano-wire, polyethylene wax, hydroxyacetic acid and aqueous isopropanol are stirred and evenly mixed, copper nano-wire ink is just obtained.
The preparation of nitrogen-doped graphene：It weighs stirring under 5g graphite, 1g sodium nitrate condition of ice bath and the 200mL concentrated sulfuric acids is added
In, 10min is stirred, 6g potassium permanganates stirring 3h is added, then is placed in 35 DEG C of stirred in water bath 3h, deionized water is added, rises
Temperature stirs 1h to 95 DEG C, and 720mL deionized waters are added and stir 10h, 80mL hydrogen peroxide is added, filters, filter cake is dissolved in
It in 1000mL5mol/L hydrochloric acid, filters and removes manganese ion, repeat to use 1000mLL5mol/L salt acid elution 3 times, then filter cake is dissolved
In 2000mL deionized waters, 1 day is stood, outwells supernatant, deionized water is added, water 10 times or so is changed in repetition until solution
PH value be more than 4, ultrasonic 10min, centrifuge, obtain graphene oxide dispersion.Melamine is taken to be dissolved in ethyl alcohol and go
In ionized water, the graphene oxide dispersion of 6mg/mL is added, 10h is reacted in 180 DEG C of autoclave, takes out washing into
Property, freeze-drying obtains nitrogen-doped graphene.Nitrogen content is 5.0% in graphene in the present embodiment.
The preparation of nitrogen-doped graphene ink：Nitrogen-doped graphene ink includes following raw material：Nitrogen-doped graphene
60wt%, polyethylene wax 5wt%, aqueous isopropanol surplus.Above-mentioned raw materials are mixed to uniformly, nitrogen-doped graphene is obtained
Ink.
The forming method of the touchscreen pattern conducting wire of the present embodiment is the same as embodiment one.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although with reference to preferred embodiment to this hair
It is bright to be described in detail, it will be understood by those of ordinary skill in the art that, it can modify to technical scheme of the present invention
Or equivalent replacement should all cover the claim in the present invention without departing from the objective and range of technical solution of the present invention
In range.Technology that the present invention is not described in detail, shape, construction part are known technology.
Claims (9)
1. touchscreen pattern conducting wire, which is characterized in that the conducting wire includes silane carbon nano tube from inside to outside
Bottom, copper nano-wire middle layer and nitrogen-doped graphene outer layer.
2. touchscreen pattern conducting wire according to claim 1, which is characterized in that the nitrogen-doped graphene outer layer
In nitrogen content be 4.0~5.0%, the nitrogen-doped graphene outer layer be in tridimensional network.
3. the forming method of touchscreen pattern conducting wire according to claim 2, which is characterized in that including following step
Suddenly：
Base material cleans：After taking base material successively to carry out neutral washing, non-contact AP cleanings, conductive circuit pattern is drawn on base material；
The formation of silane carbon nano tube bottom：Using the piezoelectric type nozzle for adding piezoelectric ceramics on nozzle, sprayed on base material
Radiosilicon alkanisation carbon nanotube ink sprays once along conductive circuit pattern, is subsequently placed at 70~75 DEG C of baking 3min, forms silicon
Alkanisation carbon nanotube bottom；
The formation of copper nano-wire middle layer：Copper nano-wire ink is sprayed on base material using piezoelectric type nozzle, along silanization carbon
Nanotube bottom sprays twice, is subsequently placed at 73~76 DEG C of baking 3min, then carry out flash of light sintering, is formed among copper nano-wire
Layer；
The formation of nitrogen-doped graphene outer layer：Continue to spray nitrogen-doped graphene ink, edge on base material using piezoelectric type nozzle
It the injection of copper nano-wire middle layer twice, is subsequently placed at 75~80 DEG C of baking 3min, forms nitrogen-doped graphene outer layer, that is, formed
Pattern conductive circuit.
4. the forming method of touchscreen pattern conducting wire according to claim 3, which is characterized in that the silanization
Carbon nanotube ink includes following raw material：50~60wt% of silane carbon nano tube, 3~5wt% of polyethylene wax, aqueous isopropanol
Surplus.
5. the forming method of touchscreen pattern conducting wire according to claim 4, which is characterized in that the silanization
Carbon nanotube is to carry out acid oxidase processing and silylating reagent to Carbon Nanotube Array successively with nitric acid and silane coupling agent
Processing.
6. the forming method of touchscreen pattern conducting wire according to claim 5, which is characterized in that the copper nanometer
Line ink includes following raw material：55~65wt% of copper nano-wire, 2~4wt% of polyethylene wax, 1~3wt% of hydroxyacetic acid, isopropyl
Alcoholic solution surplus.
7. the forming method of touchscreen pattern conducting wire according to claim 6, which is characterized in that the copper nanometer
A diameter of 55~75nm of line, length are 0.5~1.5 μm.
8. the forming method of touchscreen pattern conducting wire according to claim 7, which is characterized in that the N doping
Graphene ink includes following raw material：50~60wt% of nitrogen-doped graphene, 3~5wt% of polyethylene wax, more than aqueous isopropanol
Amount.
9. the forming method of touchscreen pattern conducting wire according to claim 8, which is characterized in that the N doping
Graphene is using graphene oxide as raw material, and melamine is reducing agent and nitrogen dopant, is prepared by hydro-thermal method.
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|---|---|---|---|---|
| CN102120572A (en) * | 2011-01-24 | 2011-07-13 | 南京大学 | Method for preparing nitrogen-doped graphene |
| CN102156602A (en) * | 2011-05-26 | 2011-08-17 | 意力(广州)电子科技有限公司 | Process for producing conducting circuit of capacitive touch screen |
| WO2012015115A1 (en) * | 2010-07-28 | 2012-02-02 | 서강대학교 산학협력단 | Ionic polymer composite and method for preparing same |
| CN103794265A (en) * | 2014-02-26 | 2014-05-14 | 无锡格菲电子薄膜科技有限公司 | Composite material of graphene and nanowires and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012015115A1 (en) * | 2010-07-28 | 2012-02-02 | 서강대학교 산학협력단 | Ionic polymer composite and method for preparing same |
| CN102120572A (en) * | 2011-01-24 | 2011-07-13 | 南京大学 | Method for preparing nitrogen-doped graphene |
| CN102156602A (en) * | 2011-05-26 | 2011-08-17 | 意力(广州)电子科技有限公司 | Process for producing conducting circuit of capacitive touch screen |
| CN103794265A (en) * | 2014-02-26 | 2014-05-14 | 无锡格菲电子薄膜科技有限公司 | Composite material of graphene and nanowires and preparation method thereof |
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