CN108649014A - A kind of shallow groove isolation structure and preparation method thereof - Google Patents
A kind of shallow groove isolation structure and preparation method thereof Download PDFInfo
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- CN108649014A CN108649014A CN201810444520.XA CN201810444520A CN108649014A CN 108649014 A CN108649014 A CN 108649014A CN 201810444520 A CN201810444520 A CN 201810444520A CN 108649014 A CN108649014 A CN 108649014A
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- substrate
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- isolation structure
- shallow groove
- groove isolation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
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Abstract
The present invention relates to technical field of semiconductors more particularly to a kind of shallow groove isolation structures, including：Substrate；Protective layer covers the upper surface of substrate；Bowl-type groove through protective layer and extends in substrate；Wherein, the angle that the both sides Yu bottom surface of bowl-type groove are formed is fillet；And the preparation method of the shallow groove isolation structure, wherein during performing etching technique, etching temperature is gradually decrease to one second preset value from one first preset value；Etching technics uses isotropic etching liquid, and the flow of chlorion is 70sccm~90sccm in etching liquid；Bottom, which can be formed, has the groove structure of fillet, can avoid there is a situation where leaking electricity, and avoiding stress concentration around shallow groove isolation structure, to improve product yield.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of shallow groove isolation structure and preparation method thereof.
Background technology
With the progress of semiconductor technology, integrated circuit develops towards more microsize and faster arithmetic speed.Work as collection
It is the important key of integrated circuit development how effectively into the isolation of units when size microminiaturization increasingly at circuit.It is shallow
Recess isolating structure is structure common in semiconductor product, is typically prepared on wafer, for by shallow groove isolation structure both sides
Unit is isolated.Therefore, shallow groove isolation structure generally requires preferable isolating power.
In the preparation process of shallow groove isolation structure, the control of depth and width and pattern to groove is larger difficulty
Point, the especially control to the pattern of groove, largely determine the isolating power of shallow groove isolation structure.
But the existing method for preparing shallow groove isolation structure, it is formed by groove structure and often there are corner angle, such as
The case where vertical or trapezoidal corner angle, this is easy to form stress concentration in wafer, also it is unfavorable for generating in subsequent processing procedure
Stress release, the case where may result in electric current or charge leakage may cause wafer breakage even to be scrapped when serious.
Patent CN101673702A discloses a kind of production method of shallow groove isolation structure, to the top wedge angle of shallow trench into
Sphering is gone, but the bottom for being more also easy to produce the shallow trench of leakage current still has wedge angle.
Invention content
In view of the above-mentioned problems, the present invention proposes a kind of shallow groove isolation structure, wherein including：
Substrate；
Protective layer covers the upper surface of the substrate；
Bowl-type groove through the protective layer and extends in the substrate；
Wherein, the angle that the both sides Yu bottom surface of the bowl-type groove are formed is fillet.
Above-mentioned shallow groove isolation structure, wherein the curvature of the fillet is 0.7~0.8.
Above-mentioned shallow groove isolation structure, wherein the radius of the fillet is 48nm~52nm.
Above-mentioned shallow groove isolation structure, wherein the angle that the fillet turns over is 70 °~75 °.
Above-mentioned shallow groove isolation structure, wherein the substrate is silicon substrate.
A kind of preparation method of shallow groove isolation structure, wherein including：
Step S1 provides a substrate；
Step S2 prepares the upper surface that a protective layer covers the substrate；
Step S3 prepares the upper surface that a photoresist layer covers the protective layer；
Step S4 is patterned the photoresist layer after forming etching pattern, removes the photoresist layer；
Step S5 performs etching the protective layer that the etching pattern exposes using an etching technics, until
The bowl-type groove with fillet is formed in the substrate；
Wherein, in the step S5, during carrying out the etching technics, by etching temperature from one first preset value by
Gradually it is reduced to one second preset value；The etching technics uses isotropic etching liquid, and chlorion in the etching liquid
Flow is 70sccm~90sccm.
Above-mentioned preparation method, wherein in the step S5, the etching temperature is at the uniform velocity to reduce.
Above-mentioned preparation method, wherein second preset value is 30 °~35 °.
Advantageous effect：A kind of shallow groove isolation structure proposed by the present invention and preparation method thereof, can form bottom has circle
The groove structure at angle, can avoid there is a situation where leaking electricity, and avoiding stress concentration around shallow groove isolation structure, from
And improve product yield.
Description of the drawings
Fig. 1 is the structure principle chart of recess isolating structure in one embodiment of the invention；
Fig. 2 is the step flow chart of the preparation method of recess isolating structure in one embodiment of the invention；
Fig. 3~5 are the structure principle chart that each step is formed in the preparation method of recess isolating structure in one embodiment of the invention.
Specific implementation mode
Invention is further explained with reference to the accompanying drawings and examples.
Embodiment one
In a preferred embodiment, as shown in Figure 1, it is proposed that a kind of shallow groove isolation structure, wherein may include：
Substrate 10；
Protective layer 20 covers the upper surface of substrate 10；
Bowl-type groove TR through protective layer 20 and is extended in substrate 10；
Wherein, the angle that the both sides Yu bottom surface of bowl-type groove TR are formed is fillet.
Can also include the first oxide layer 30 for filling bowl-type groove TR in above-mentioned technical proposal, and first oxygen
Changing layer 30 can also cover in addition to filling bowl-type groove TR to the upper surface of protective layer 20；Protective layer 20 may include one second
Oxide layer 21 and a nitration case 22；Further, nitration case 22 can be prepared by silicon nitride and be formed.
In a preferred embodiment, the curvature of fillet can be 0.7~0.8, for example, can be 0.72, or
0.74 or 0.76 or 0.78 etc..
In a preferred embodiment, the radius of fillet is 48nm (nanometer)~52nm, it is further preferable that can be
50nm。
In above-described embodiment, it is preferable that the angle that fillet turns over can be 70 °~75 °, for example, can be 71 °,
Or 72 ° or 73 ° or 74 ° etc..
In a preferred embodiment, substrate 10 can be silicon substrate, can also use other linings commonly used in the art
Bottom material.
Embodiment two
As shown in Fig. 2, in a preferred embodiment, the invention also provides a kind of preparation sides of shallow groove isolation structure
Method, being formed by structure can be as seen in figures 3-5, wherein may include：
Step S1 provides a substrate 10；
Step S2 prepares the upper surface of a protective layer 20 covering substrate 10；
Step S3 prepares the upper surface of a photoresist layer RT protective mulches；
Step S4 is patterned photoresist layer RT after forming etching pattern, removes photoresist layer；
Step S5 performs etching the protective layer 20 that etching pattern exposes using an etching technics, until in substrate 10
It is middle to form the bowl-type groove TR with fillet；
Wherein, in step S5, during performing etching technique, etching temperature is gradually decrease to from one first preset value
One second preset value；Etching technics uses isotropic etching liquid, and the flow of chlorion is 70sccm in etching liquid
(every point of standard-state cubic centimeter per minute mark conditions milliliter, abbreviation sccm)~90sccm, is lifted
Can be 72sccm or 75sccm or 80sccm or 85sccm or 88sccm etc. for example.
Can also include the first oxide layer 30 for filling bowl-type groove TR in above-mentioned technical proposal, and first oxygen
Changing layer 30 can also cover in addition to filling bowl-type groove TR to the upper surface of protective layer 20；Protective layer 20 may include one second
Oxide layer 21 and a nitration case 22；In to etching liquid under the control of the flow of chlorion, it can ensure that etching process is in the same direction
Etching, to form fillet in bottom portion of groove.
In a preferred embodiment, in step S5, etching temperature can be at the uniform velocity to reduce.
In a preferred embodiment, the first preset value can be set according to actual process, not limit tool herein
The value of body.
In a preferred embodiment, the second preset value can be 30 °~35 °, for example, can be 31 °, or
32 ° or 33 ° or 34 ° etc..
In conclusion a kind of shallow groove isolation structure proposed by the present invention, including：Substrate；Protective layer covers the upper table of substrate
Face；Bowl-type groove through protective layer and extends in substrate；Wherein, the angle that the both sides with bottom surface of bowl-type groove are formed is
Fillet；And the preparation method of the shallow groove isolation structure, wherein during performing etching technique, by etching temperature from one
One preset value is gradually decrease to one second preset value；Etching technics uses isotropic etching liquid, and chlorion in etching liquid
Flow be 70sccm~90sccm；Bottom, which can be formed, has the groove structure of fillet, and shallow groove isolation structure can be avoided all
It encloses there is a situation where leaking electricity, and avoiding stress concentration, to improve product yield.
By description and accompanying drawings, the exemplary embodiments of the specific structure of specific implementation mode are given, based on present invention essence
God can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering the true intention and range of the present invention as.It is weighing
The range and content of any and all equivalences within the scope of sharp claim, are all considered as still belonging to the intent and scope of the invention.
Claims (8)
1. a kind of shallow groove isolation structure, which is characterized in that including：
Substrate；
Protective layer covers the upper surface of the substrate；
Bowl-type groove through the protective layer and extends in the substrate；
Wherein, the angle that the both sides Yu bottom surface of the bowl-type groove are formed is fillet.
2. shallow groove isolation structure according to claim 1, which is characterized in that the curvature of the fillet is 0.7~0.8.
3. shallow groove isolation structure according to claim 1, which is characterized in that the radius of the fillet is 48nm~52nm.
4. shallow groove isolation structure according to claim 3, which is characterized in that the angle that the fillet turns over be 70 °~
75°。
5. shallow groove isolation structure according to claim 1, which is characterized in that the substrate is silicon substrate.
6. a kind of preparation method of shallow groove isolation structure, which is characterized in that including：
Step S1 provides a substrate；
Step S2 prepares the upper surface that a protective layer covers the substrate；
Step S3 prepares the upper surface that a photoresist layer covers the protective layer；
Step S4 is patterned the photoresist layer after forming etching pattern, removes the photoresist layer；
Step S5 performs etching the protective layer that the etching pattern exposes using an etching technics, until described
The bowl-type groove with fillet is formed in substrate；
Wherein, in the step S5, during carrying out the etching technics, etching temperature is gradually dropped from one first preset value
Down to one second preset value；The etching technics use isotropic etching liquid, and in the etching liquid chlorion flow
For 70sccm~90sccm.
7. preparation method according to claim 6, which is characterized in that in the step S5, the etching temperature is at the uniform velocity
It reduces.
8. preparation method according to claim 6, which is characterized in that second preset value is 30 °~35 °.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020192969A1 (en) * | 2001-04-26 | 2002-12-19 | Becky Losee | Method for etching silicon trenches |
| US20030211702A1 (en) * | 2002-05-07 | 2003-11-13 | Krishna Parat | Dual trench isolation using single critical lithographic patterning |
| CN101752290A (en) * | 2008-12-03 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN101752285A (en) * | 2008-12-03 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Forming method of groove |
| CN103258842A (en) * | 2013-05-02 | 2013-08-21 | 上海华力微电子有限公司 | Double-layer shallow groove isolation structure, manufacturing method and transverse diffusion metal oxide semiconductor (MOS) tube |
| CN103400796A (en) * | 2013-08-14 | 2013-11-20 | 上海华力微电子有限公司 | Etching technology for dual depth shallow trench isolation groove |
-
2018
- 2018-05-10 CN CN201810444520.XA patent/CN108649014A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020192969A1 (en) * | 2001-04-26 | 2002-12-19 | Becky Losee | Method for etching silicon trenches |
| US20030211702A1 (en) * | 2002-05-07 | 2003-11-13 | Krishna Parat | Dual trench isolation using single critical lithographic patterning |
| CN101752290A (en) * | 2008-12-03 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN101752285A (en) * | 2008-12-03 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Forming method of groove |
| CN103258842A (en) * | 2013-05-02 | 2013-08-21 | 上海华力微电子有限公司 | Double-layer shallow groove isolation structure, manufacturing method and transverse diffusion metal oxide semiconductor (MOS) tube |
| CN103400796A (en) * | 2013-08-14 | 2013-11-20 | 上海华力微电子有限公司 | Etching technology for dual depth shallow trench isolation groove |
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