CN108648890B - Method for preparing nano-particle line array resistor - Google Patents
Method for preparing nano-particle line array resistor Download PDFInfo
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- CN108648890B CN108648890B CN201810447949.4A CN201810447949A CN108648890B CN 108648890 B CN108648890 B CN 108648890B CN 201810447949 A CN201810447949 A CN 201810447949A CN 108648890 B CN108648890 B CN 108648890B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
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Abstract
The invention provides a preparation method of a nano particle wire array resistor, which comprises the following steps: obtaining a prepared sample; placing a prepared sample on a three-dimensional micro-displacement platform; the femtosecond pulse laser passes through the optical path system and then is focused on the surface of the gold film through the quartz slide, the PC controls the three-dimensional micro-displacement platform to move in the Y-axis direction and the Z-axis direction, the gold film is ablated by the focused laser to form plasma eruption in a bounding space, the erupted gold nanoparticles are received by the covered glass, and the gold nanoparticle linear array resistance is obtained on the surface of the glass; characterizing the shape characteristics of the gold nanoparticle line array resistor. The method is based on a femtosecond laser micro-nano processing platform, combines a laser induction backward transfer technology, prepares a linear array resistor consisting of gold nanoparticles by controlling the energy density, the scanning speed and the processing number of femtosecond pulse laser, and utilizes a scanning electron microscope and an atomic force microscope to represent the morphology characteristics of the gold nanoparticles with different processing parameters.
Description
Technical Field
The invention belongs to a rapid preparation technology of a new composite nano-structure material, belongs to the comprehensive cross field of integration of light, machinery, electricity, materials and computers, and particularly relates to a preparation method of a nano-particle wire array resistor.
Background
Due to the fact that the nano structure of the material has a large specific surface area, quantum confinement effect, small-size effect and the like, the nano structure material has excellent optical, electrical, chemical and mechanical properties different from those of a bulk material, such as high surface chemical activity, gas adsorption advantage, absorption enhancement effect, quantum tunneling effect and the like, and is widely applied to the technical field of photoelectrons, for example, palladium nano-size resistors can be used for preparing hydrogen sensing devices.
Common methods for manufacturing nano-sized resistors include photolithography patterning nanowire electrodeposition (LPNE) and thin film deposition (thin film deposition system), and these methods are complicated to operate, relatively complex in process flow, and expensive in equipment, and must use special equipment.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a preparation method of a nano particle wire array resistor.
In order to achieve the above purpose, the invention provides the following technical scheme:
the preparation method of the nano particle linear array resistor comprises a femtosecond laser system, a three-dimensional micro-displacement platform, an optical path system and a PC (personal computer), wherein the optical path system comprises a half-wave plate, a Glan prism, a diaphragm, a shutter and a focusing objective lens, femtosecond pulse laser output by the femtosecond laser system sequentially passes through the half-wave plate, the Glan prism, the diaphragm, the shutter and the focusing objective lens which are arranged at intervals, a prepared sample is arranged on the three-dimensional micro-displacement platform, the femtosecond pulse laser is focused on the prepared sample through the focusing objective lens, and the three-dimensional micro-displacement platform and the shutter are controlled by the PC;
the preparation method comprises the following steps:
plating a gold film on the surface of glass, and then covering a quartz slide on the gold film to obtain the prepared sample;
secondly, placing the prepared sample on the three-dimensional micro-displacement platform, wherein a quartz slide faces to the focusing objective lens;
step three, the femtosecond laser system outputs femtosecond pulse laser, the femtosecond pulse laser sequentially passes through the half-wave plate, the Glan prism, the diaphragm, the shutter and the focusing objective lens and then is focused on the surface of the gold film through the quartz slide, meanwhile, the PC controls the three-dimensional micro-displacement platform to move in the directions of the Y axis and the Z axis, the gold film is ablated by the focused laser, plasma eruption of a bounding space is formed, the erupted gold nanoparticles are received by covered glass, femtosecond laser induced backward transfer of the surface of a prepared sample is realized, and the surface of the glass obtains gold nanoparticle linear array resistance;
step four: and analyzing and representing the shape characteristics of the gold nanoparticle linear array resistor prepared by the femtosecond laser backward transfer technology by using a scanning electron microscope and an atomic force microscope.
Preferably, the femtosecond laser system outputs femtosecond pulse laser with the wavelength of 800nm, the pulse width of 90fs and the repetition frequency of 1 kHz.
Preferably, the focal length of the focusing objective lens is 15cm, and the size of a light spot focused by the focusing objective lens is 40 μm.
Preferably, the half-wave plate and the Glan prism are combined to continuously adjust the energy output by the laser, and the shutter accurately selects the number of the femtosecond pulse lasers.
Preferably, the thickness of the gold film is 50nm, the glass is K9 glass, and the thickness of the quartz slide is 1 mm.
The preparation method of the nanoparticle linear array resistor comprises a femtosecond laser system, a three-dimensional micro-displacement platform, an optical path system and a PC (personal computer), wherein the optical path system comprises a half-wave plate, a Glan prism, a diaphragm, a shutter and a focusing objective lens; the preparation method comprises the following steps: plating a gold film on the surface of the glass, and then covering a quartz slide on the gold film to obtain a prepared sample; placing a prepared sample on a three-dimensional micro-displacement platform, wherein a quartz slide faces a focusing objective lens; outputting femtosecond pulse laser by a femtosecond laser system, enabling the femtosecond pulse laser to sequentially pass through a half-wave plate, a Glan prism, a diaphragm, a shutter and a focusing objective lens and then to penetrate through a quartz slide to be focused on the surface of a gold film, simultaneously controlling a three-dimensional micro-displacement platform to move in the directions of a Y axis and a Z axis by a PC (personal computer), and obtaining a gold nanoparticle linear array resistor on the surface of glass; analyzing and representing the morphological characteristics of the gold nanoparticle line array resistor prepared by the femtosecond laser backward transfer technology; according to the method, a femtosecond laser micro-nano processing platform is utilized, the femtosecond laser direct writing and laser induced backward transfer technology is adopted, gold nanoparticles can be conveniently and rapidly transferred to the surface of glass according to designed patterns, linear array nano resistors are formed, gold electrodes are plated on two sides of the linear array resistors, a nano linear array resistor prototype is prepared, the resistance of the nano resistors is measured by a picometer, the problems that the laser energy density influences the morphology of the gold nanoparticles, the scanning speed during laser direct writing influences the resistance of the linear array nano resistors and the like are solved, the laser direct writing technology realizes controllable preparation of the linear array resistors of the gold nanoparticles, the morphology of the nano resistors can be controlled by adjusting the laser energy density, and the laser direct writing technology can adjust the scanning speed and the number of linear arrays; the operation method is simple and reliable, other special equipment is not needed, the preparation efficiency is high, and the method can be applied to the fields of photoelectron integrated devices, gas sensing devices, biological sensing devices and the like.
Drawings
FIG. 1 is a schematic diagram of laser direct writing of the method for preparing a nanowire array resistor of example 1 of the present invention;
FIG. 2 is a schematic diagram of resistance of gold nanoparticles prepared by laser-induced backward transfer;
FIG. 3 is a schematic diagram of a fabricated resistor prototype and structure;
FIG. 4 is a graph comparing resistance measurements made with different processing parameters;
figure 5 is a profile of the gold nanoparticle linear array resistance characterization of number gold 3.
Detailed Description
The following further describes embodiments of the present invention with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example 1
The invention provides a preparation method of a nanoparticle linear array resistor, which is specifically shown in figure 1 and comprises a femtosecond laser system, a three-dimensional micro-displacement platform, an optical path system and a PC (personal computer), wherein the optical path system comprises a half-wave plate, a Glan prism, a diaphragm, a shutter and a focusing objective lens; the XYZ stage in fig. 1 is the three-dimensional micro-displacement stage described above.
The preparation method comprises the following steps:
step one, plating a gold film on the surface of glass, and then covering a quartz slide on the gold film to obtain a prepared sample; the thickness of the gold film is 50nm, the glass is K9 glass, and the thickness of the quartz slide is 1 mm.
Placing the prepared sample on a three-dimensional micro-displacement platform, wherein the quartz slide faces to a focusing objective lens;
a femtosecond laser system outputs femtosecond pulse laser, the femtosecond pulse laser sequentially passes through a half-wave plate, a Glan prism, a diaphragm, a shutter and a focusing objective lens and then is focused on the surface of a gold film through a quartz slide, meanwhile, a PC controls a three-dimensional micro-displacement platform to move in the directions of a Y axis and a Z axis, the stepping distance of the Z axis adjusts the line scanning interval, the gold film is ablated by the focused laser to form plasma eruption of a bounding space, the erupted gold nanoparticles are received by covered glass, the femtosecond laser induced backward transfer on the surface of a prepared sample is realized, and the surface of the glass obtains a gold nanoparticle linear array resistance; since the ablation threshold of quartz is much higher than that of gold film, the gold film is ablated without affecting the glass substrate. In the embodiment, the femtosecond pulse laser output by the femtosecond laser system has the wavelength of 800nm, the pulse width of 90fs and the repetition frequency of 1 kHz; the focal length of the focusing objective lens is 15cm, and the size of a light spot focused by the focusing objective lens is 40 mu m; the working wavelength of the half-wave plate and the Glan prism is 800nm, the combination of the half-wave plate and the Glan prism can continuously adjust the energy output by the laser, and the shutter accurately selects the number of the femtosecond pulse laser.
Step four: the shape and appearance characteristics of the gold nanoparticle linear array resistor prepared by the femtosecond laser backward transfer technology are analyzed and characterized by a scanning electron microscope and an atomic force microscope, wherein the model of the scanning electron microscope is JSM-7001F, the model of the atomic force microscope is MultiMode Nanoscope III, and whether ablation is characterized by the scanning electron microscope or not.
FIG. 2 is a diagram of a resistance of a gold nanoparticle array prepared by a femtosecond laser induced backward transfer technique. The gold film is ablated by focused laser to form plasma eruption in a bounding space, and the erupted gold nanoparticles are received by the covered quartz substrate. The focused laser beam is fixed, the gold film sample shown in fig. 2 is fixed on a three-dimensional micro-displacement platform, the processing direction scans once from top to bottom along the Y-axis direction to obtain a nanowire consisting of gold nanoparticles, the stepping displacement in the Z-axis direction is the distance between the nanowires, and the wire array structure can be obtained after multiple linear scans of the laser beam.
Fig. 3 is a schematic diagram of a prepared resistor prototype and structure, in which the square frame in fig. 3(a) is a linear array resistor composed of gold nanoparticles, both sides are gold-plated electrodes, and fig. 3(b) is a schematic diagram of structure. Fig. 4 shows the resistance measurement results corresponding to different laser energy densities, scanning speeds and numbers of nanowires, wherein the abscissa represents the scanning voltage applied to the gold electrode, and the ordinate represents the measured nA-level current.
The resistances of the quartz substrate and the 5 sets of gold nanoparticle resistors are shown in table 1. In fig. 4, silica is a curve of the current of the quartz substrate versus the scanning voltage, and table 2 lists the parameters of the number N of the line arrays, the laser energy density F and the scanning speed V, it can be seen that when F and V are the same, N is increased from 50(gold3) to 100(gold5), the resistance is also doubled, and when F is increased, the resistance value is increased, which is caused by that the ablation phenomenon is increased, the size of the gold nanoparticles is increased, the distance between the particles is increased, and V is decreased, which is equivalent to the increase of F. Fig. 5a and 5b are optical microscope pictures, scanning electron microscope pictures, fig. 5c atomic force microscope pictures, and fig. 5d is high magnification scanning electron microscope pictures of the gold nanoparticle line array resistor with the number gold3, and it can be seen that the line array resistor is composed of gold nanoparticles distributed randomly.
TABLE 1 actually measured resistance
| silica | goldl | gold2 | gold3 | gold4 | gold5 |
| 89.91GΩ | 36.99GΩ | 39.79GΩ | 8.55GΩ | 26.39GΩ | 18.31GΩ |
TABLE 2 different processing parameters
| goldl | gold2 | gold3 | gold4 | gold5 | |
| N (strip) | 50 | 50 | 50 | 50 | 100 |
| F(mJ/cm2) | 370 | 740 | 370 | 740 | 370 |
| V(mm/s) | 0.5 | 0.5 | 1 | 1 | 1 |
The key points of the preparation method of the nano-particle wire array resistor provided by the invention are as follows:
1. different from the traditional preparation method of etching and film deposition, the technical scheme of the invention is that the femtosecond laser backward transfer technology is directly utilized, the wire array resistor consisting of gold nanoparticles can be conveniently and rapidly prepared, and the morphology of the nanoparticles and the number of the wire arrays can be manually regulated and controlled.
2. The technical key point of the invention lies in the processing parameters of the nanowire array resistor, particularly the influence of the particle morphology, the scanning speed and the number of the wire arrays on the resistance.
The above-mentioned embodiments are only preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, and any simple modifications or equivalent substitutions of the technical solutions that can be obviously obtained by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (2)
1. The preparation method of the nano particle linear array resistor is characterized by comprising a femtosecond laser system, a three-dimensional micro-displacement platform, an optical path system and a PC (personal computer), wherein the optical path system comprises a half-wave plate, a Glan prism, a diaphragm, a shutter and a focusing objective lens, femtosecond pulse laser output by the femtosecond laser system sequentially passes through the half-wave plate, the Glan prism, the diaphragm, the shutter and the focusing objective lens which are arranged at intervals, a prepared sample is arranged on the three-dimensional micro-displacement platform, the femtosecond pulse laser passes through the focusing objective lens and is focused on the prepared sample, and the three-dimensional micro-displacement platform and the shutter are controlled by the PC;
the preparation method comprises the following steps:
plating a gold film on the surface of glass, and then covering a quartz slide on the gold film to obtain the prepared sample;
secondly, placing the prepared sample on the three-dimensional micro-displacement platform, wherein a quartz slide faces to the focusing objective lens;
step three, the femtosecond laser system outputs femtosecond pulse laser, the femtosecond pulse laser sequentially passes through the half-wave plate, the Glan prism, the diaphragm, the shutter and the focusing objective lens and then is focused on the surface of the gold film through the quartz slide, meanwhile, the PC controls the three-dimensional micro-displacement platform to move in the directions of the Y axis and the Z axis, the gold film is ablated by the focused laser, plasma eruption of a bounding space is formed, the erupted gold nanoparticles are received by covered glass, femtosecond laser induced backward transfer of the surface of a prepared sample is realized, and the surface of the glass obtains gold nanoparticle linear array resistance;
step four: analyzing and representing the shape characteristics of the gold nanoparticle line array resistor prepared by the femtosecond laser backward transfer technology by using a scanning electron microscope and an atomic force microscope;
the femtosecond pulse laser output by the femtosecond laser system has the wavelength of 800nm, the pulse width of 90fs and the repetition frequency of 1 kHz;
the focal length of the focusing objective lens is 15cm, and the size of a light spot focused by the focusing objective lens is 40 mu m;
the half-wave plate and the Glan prism are combined to continuously adjust the energy output by the laser, and the shutter accurately selects the number of the femtosecond pulse lasers.
2. The method of claim 1, wherein the gold film has a thickness of 50nm, the glass is K9 glass, and the quartz slide has a thickness of 1 mm.
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| CN109870884B (en) * | 2019-01-23 | 2021-01-19 | 长春理工大学 | Laser interference backward transfer system |
| CN111500986A (en) * | 2019-04-04 | 2020-08-07 | 中国科学院长春光学精密机械与物理研究所 | Optical device and method for efficiently preparing nano tungsten and nano tungsten oxide |
| CN109911848B (en) * | 2019-04-12 | 2019-12-20 | 湖南城市学院 | Device and method for precisely controlling and transmitting nanowires |
| CN110202265A (en) * | 2019-05-14 | 2019-09-06 | 中国电子科技集团公司第三十八研究所 | A kind of processing method of diamond high-precision microchanneled surface |
| CN110449734B (en) * | 2019-08-23 | 2022-01-04 | 大连理工大学 | Method for preparing conductive pattern by laser-induced reverse transfer under gas protection |
| CN112233991B (en) * | 2020-09-17 | 2024-04-16 | 西安交通大学 | Method for inducing silver nanowire interconnection by femtosecond pulse laser |
| CN113182693B (en) * | 2021-04-29 | 2023-02-07 | 北京工业大学 | Femtosecond laser preparation SiO 2 Method for swelling micro-nano structure on metal interface |
| CN113634882A (en) * | 2021-07-20 | 2021-11-12 | 广州大学 | System and method for laser micro-nano processing graph |
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