CN108646844A - A kind of temperature-compensation circuit, temperature-compensation method - Google Patents
A kind of temperature-compensation circuit, temperature-compensation method Download PDFInfo
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- CN108646844A CN108646844A CN201810549335.7A CN201810549335A CN108646844A CN 108646844 A CN108646844 A CN 108646844A CN 201810549335 A CN201810549335 A CN 201810549335A CN 108646844 A CN108646844 A CN 108646844A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a kind of temperature-compensation circuit, including reference voltage generation module, function of temperature compensation control module and constant flow module；The reference voltage generation module generates various reference voltages；The function of temperature compensation control module and reference voltage compare, and realize that temperature compensation function, the constant flow module make chip export constant electric current.The temperature-compensation circuit accuracy of detection of the present invention can reach 2mV/ DEG C or more; so as to more be accurately controlled temperature compensation point; and it such as encounters extreme case chip temperature to continue to rise; when temperature reaches overheat protector point; chip is closed immediately; therefore the power consumption and protection driving circuit that circuit can be adjusted well, can apply in a variety of contexts.
Description
Technical field
The invention belongs to integrated circuit fields, more particularly to a kind of temperature-compensation circuit and a kind of temperature-compensation method.
Background technology
In integrated circuit fields, chip is damaged because of overheat in order to prevent, usually can all have temperature compensation function,
Existing temperature-compensating be chip temperature be more than setting compensation temperature point when, by way of linear reduction operating current,
Chip is maintained to work on and reduce temperature.The accuracy of detection of existing compensation schemes is 1mV/ DEG C, and accuracy of detection is relatively low.
Invention content
The purpose of the present invention exactly proposes a kind of temperature-compensation circuit, when chip temperature is more than the compensation temperature point of setting
When, by way of linear reduction operating current, maintains chip to work on and reduce temperature, such as encounter extreme case chip temperature
Degree continues to rise, and when chip temperature is more than the overheat protector point of setting, closes chip immediately.
The invention discloses a kind of temperature-compensation circuit, including reference voltage generation module, function of temperature compensation control module and
Constant flow module；The reference voltage generation module generates various reference voltages；The function of temperature compensation control module and reference voltage
Compare, realizes that temperature compensation function, the constant flow module make chip export constant electric current.
Further, the reference voltage generation module includes band-gap reference BANDGAP, operational amplifier OP1, operation puts
Big device OP2With first resistor group, the band-gap reference BANDGAP outputs VBG is connected to the operational amplifier OP1Positive inputs
End, the operational amplifier OP1Output end is connected to ground by the first resistor group.
Further, the first resistor group includes resistance R1, resistance R2, resistance R3, resistance R4, resistance R5With resistance R6,
The resistance R1With the resistance R2Tie point be connected to the operational amplifier OP1Inverting input；
The resistance R2With the resistance R3Tie point be connected to the operational amplifier OP2Normal phase input end；
The operational amplifier OP2Inverting input is connected with output end and output reference voltage VREF1；
The resistance R3With the resistance R4Tie point output reference voltage VREF2；
The resistance R4With the resistance R5Tie point output reference voltage VREF3；
The resistance R5With the resistance R6Tie point output reference voltage VOP.
Further, the function of temperature compensation control module includes operational amplifier OP3, comparator CMP1, comparator CMP2、
Transmission gate TG1, transmission gate TG2, phase inverter group, triode PNP1, PMOS tube M1, second resistance group, capacitance；The PMOS tube M1Source
Pole is connected to power vd D, and grid connects bias voltage VBIAS, drain electrode and the triode PNP1Emitter is connected, and described three
Pole pipe PNP1Base stage and collector are connected to ground, the reference voltage V REF1It is connected to ground by the second resistance group.
Further, the capacitance includes capacitance C1, capacitance C2, capacitance C3With capacitance C1；
The second resistance group includes resistance R7, resistance R8, resistance R9With resistance R10；
The PMOS tube M1Drain electrode and the triode PNP1The tie point of emitter is connected to the operational amplifier OP3Positive
Input terminal, and pass through the capacitance C1It is connected to ground, the resistance R7With the resistance R8Tie point be connected to the operation
Amplifier OP3Inverting input, the resistance R8With the resistance R9Tie point be connected to the operational amplifier OP3Output
End, the resistance R9With the resistance R10Tie point output negative temperature coefficient voltage VCTAT；The transmission gate TG2Input terminal
Meet the reference voltage V REF2, the transmission gate TG2Output end is connected to the comparator CMP1Inverting input, and pass through
The capacitance C2It is connected to ground；The transmission gate TG1Input terminates the reference voltage V REF3, the transmission gate TG1Output end
It is connected to comparator CMP1Inverting input；The comparator CMP1Normal phase input end is connected to the PMOS tube M1Drain electrode and institute
State triode PNP1The tie point of emitter.
Further, the phase inverter group includes phase inverter INV1, phase inverter INV2, phase inverter INV3With phase inverter INV4,
The comparator CMP1Output end passes through the phase inverter INV1Enable signal OTP is generated, the enable signal OTP passes through
The phase inverter INV2Generate enable signal _ OTP；Negative temperature coefficient voltage VCTAT is connected to the comparator CMP2Positive inputs
End, and pass through the capacitance C3It is connected to ground；The reference voltage V OP is connected to the comparator CMP2Inverting input, and
And pass through the capacitance C4It is connected to ground；The comparator CMP2Output end passes through the phase inverter INV3Generation enable signal _
VSEL, the enable signal _ VSEL pass through the phase inverter INV4Generate enable signal VSEL.
Further, the constant flow module includes NMOS tube group, operational amplifier OP4, transmission gate TG3With resistance R11, institute
It includes NMOS tube M to state NMOS tube group2, NMOS tube M3, NMOS tube M4With NMOS tube M5, NMOS tube M2Grid connects the enable signal
VSEL, drain electrode meet the reference voltage V OP, and source electrode meets amplifier OP4Normal phase input end；NMOS tube M3Grid connect enable signal _
VSEL, drain electrode meet reference voltage V CTAT, and source electrode meets amplifier OP4Normal phase input end；Transmission gate TG3Input terminates the operation amplifier
Device OP4Output end, output terminate the NMOS tube M4Drain electrode；The operational amplifier OP4Inverting input passes through the resistance R11
Ground connection；The NMOS tube M4Grid meets the enable signal OTP, the NMOS tube M4Source electrode is grounded；The NMOS tube M5Grid connects
The transmission gate TG3Output end, the NMOS tube M5Source electrode passes through the resistance R11Ground connection, the NMOS tube M5Source electrode exports
IOUT connects external loading.
The invention also discloses a kind of temperature-compensation method, the temprature control method is utilized as claim 3-8 is any
The temperature-compensation circuit, the function of temperature compensation control module by generate negative temperature coefficient voltage VCTAT, and with benchmark electricity
Pressure VOP compares, by by triode PNP1Emitter and the voltage difference VEB of the base stage and reference voltage V REF2Or the benchmark
Voltage VREF3It is compared, realizes temperature-compensating.
Further, when chip temperature is less than T1When, so that the reference voltage V CTAT is more than the reference voltage V OP, institute
State comparator CMP2 output high level, the NMOS tube M2Pipe is connected, the NMOS tube M3Pipe ends, and the reference voltage V OP connects
To the operational amplifier OP4Normal phase input end；The transmission gate TG1Conducting, the transmission gate TG2Shutdown, the reference voltage
VREF3It is connected to the comparator CMP1Inverting input makes VEB be more than the reference voltage V REF3, the comparator CMP1It is defeated
Go out high level, the transmission gate TG3Conducting, the NMOS tube M4Pipe ends, the NMOS tube M5Pipe is connected, the resistance R11On
Voltage be VOP, chip output current。
Further, when chip temperature is more than T1When, so that the reference voltage V CTAT is less than the reference voltage V OP, institute
State comparator CMP2 output low levels, the NMOS tube M2Pipe ends, the NMOS tube M3Pipe is connected, the reference voltage V CTAT
It is connected to the operational amplifier OP4Normal phase input end；The transmission gate TG1Conducting, the transmission gate TG2Shutdown, the benchmark electricity
Press VREF3It is connected to the comparator CMP1Inverting input makes VEB be more than the reference voltage V REF3, the comparator CMP1
Export high level, the transmission gate TG3Conducting, the NMOS tube M4Pipe ends, the NMOS tube M5Pipe is connected, the resistance R11
On voltage be the negative temperature coefficient voltage VCTAT, chip output current。
Further, when chip temperature is more than T2When, so that VEB is less than the reference voltage V REF3, the comparator CMP1
Export low level, the transmission gate TG3Shutdown, the NMOS tube M4Pipe is connected, the NMOS tube M5Pipe ends, and chip is turned off,
Output current IO UT becomes zero.
Beneficial effects of the present invention：Temperature increases chip during the work time, when temperature is more than compensation temperature point, chip
It will not immediately turn off, but pass through linear reduction resistance R11On voltage, reduce current value, and then reduce chip power-consumption and temperature
Degree, such as encounters extreme case chip temperature and continues to rise, and when temperature is more than overheat protector point, chip immediately turns off, and avoids core
Piece is burnt because of overheat, to enhance the security and stability of chip.
The temperature-compensation circuit accuracy of detection of the present invention can reach 2mV/ DEG C or more, so as to more be accurately controlled
Temperature compensation point, and such as encounter extreme case chip temperature and continue to rise, when temperature reaches overheat protector point, close immediately
Chip, therefore the power consumption and protection driving circuit of circuit can be adjusted well, it can apply in a variety of contexts.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 show a kind of temperature-compensation circuit schematic diagram of the present invention.
Fig. 2 show a kind of temperature-compensation circuit output current and varies with temperature curve synoptic diagram.
Specific implementation mode
Present invention is further described in detail with reference to the accompanying drawings and examples.Following embodiment is for illustrating this hair
It is bright, but cannot be used for limiting the scope of the invention.
As shown in Figure 1, for a kind of temperature-compensation circuit of the present invention, including reference voltage generation module, temperature-compensating control
Molding block and constant flow module；Wherein, reference voltage generation module generates various reference voltages；Function of temperature compensation control module passes through production
Raw negative temperature coefficient voltage VCTAT, and comparing with reference voltage V OP, realizes temperature compensation function, and by by triode
PNP1The voltage difference VEB and reference voltage V REF of emitter and base stage2Or VREF3It is compared, realizes that the excess temperature for closing chip is protected
Protective function；Constant flow module makes chip export constant electric current.
Reference voltage generation module is by band-gap reference BANDGAP, operational amplifier OP in the embodiment of the present invention1And OP2,
One resistance group, first resistor group include resistance R1-R6；Wherein, band-gap reference BANDGAP exports VBG and is connected to amplifier OP1Positive
Input terminal, amplifier OP1Output end passes through resistance R1-R6It is connected to ground, resistance R1And R2Tie point be connected to amplifier OP1Reverse phase is defeated
Enter end；Resistance R2And R3Tie point be connected to amplifier OP2Normal phase input end, amplifier OP2Inverting input is connected simultaneously with output end
Output reference voltage VREF1；Resistance R3And R4Tie point output reference voltage VREF2；Resistance R4And R5Tie point export base
Quasi- voltage VREF3；Resistance R5And R6Tie point output reference voltage VOP.
Temperature-compensating control module is by operational amplifier OP in the embodiment of the present invention3, comparator CMP1And CMP2, transmission gate
TG1And TG2, phase inverter INV1-INV4, triode PNP1, PMOS tube M1, second resistance group, second resistance group includes resistance R7-
R10, capacitance C1-C4It constitutes；Wherein, PMOS tube M1Source electrode is connected to power vd D, and grid connects bias voltage VBIAS, drain electrode and three
Pole pipe PNP1Emitter is connected；Triode PNP1Base stage and collector are connected to ground；Reference voltage V REF1Pass through resistance R7-R10
It is connected to ground；PMOS tube M1Drain electrode and triode PNP1The tie point of emitter is connected to amplifier OP3Normal phase input end, and lead to
Cross capacitance C1It is connected to ground, resistance R7And R8Tie point be connected to amplifier OP3Inverting input, resistance R8And R9Tie point connect
It is connected to amplifier OP3Output end, resistance R9And R10Tie point output negative temperature coefficient voltage VCTAT；Transmission gate TG2Input termination
Reference voltage V REF2, upper part, which controls, terminates enable signal OTP, and lower control terminal meets enable signal _ OTP, and output end is connected to
Comparator CMP1Inverting input, and pass through capacitance C2It is connected to ground；Transmission gate TG1Input termination reference voltage V REF3,
Top control termination enable signal _ OTP, lower control terminal meet enable signal OTP, and output end is connected to comparator CMP1Reverse phase is defeated
Enter end；Comparator CMP1Normal phase input end is connected to PMOS tube M1Drain electrode and triode PNP1The tie point of emitter, output end
Pass through phase inverter INV1Enable signal OTP is generated, enable signal OTP passes through phase inverter INV2Generate enable signal _ OTP；Negative temperature
Coefficient voltages VCTAT is connected to comparator CMP2Normal phase input end, and pass through capacitance C3It is connected to ground；Reference voltage V OP connections
To comparator CMP2Inverting input, and pass through capacitance C4It is connected to ground；Comparator CMP2Output end passes through phase inverter INV3Production
Raw enable signal _ VSEL, enable signal _ VSEL pass through phase inverter INV4Generate enable signal VSEL.
Constant flow module is by NMOS tube M in the embodiment of the present invention2-M5, operational amplifier OP4, transmission gate TG3, resistance R11Structure
At；Wherein, NMOS tube M2Grid meets enable signal VSEL, and drain electrode meets reference voltage V OP, and source electrode meets amplifier OP4Normal phase input end；
NMOS tube M3Grid meets enable signal _ VSEL, and drain electrode meets reference voltage V CTAT, and source electrode meets amplifier OP4Normal phase input end；Transmission gate
TG3Input termination amplifier OP4Output end, upper part control termination enable signal OTP, lower control terminal meets enable signal _ OTP, defeated
Go out to terminate NMOS tube M4Drain electrode；Amplifier OP4Inverting input passes through resistance R11Ground connection；NMOS tube M4Grid meets enable signal OTP,
Source electrode is grounded；NMOS tube M5Grid meets transmission gate TG3Output end, source electrode pass through resistance R11Ground connection, source electrode export IOUT, connect outside
Load.
The operation principle of the embodiment of the present invention is：
In reference voltage generation module, R1-R6For a string of divider resistances, from amplifier " empty short " and " empty to break "：
,,
,,
In function of temperature compensation control module, VEB is triode PNP1Voltage difference between emitter and base stage, by amplifier " empty short " and
Known to " void is disconnected "：
VCTAT differentiates to temperature, because of VREF1Substantially it does not vary with temperature, then the temperature coefficient of VCTAT is：
The temperature coefficient of VEB is a negative value, the temperature coefficient smaller of the temperature coefficient ratio VEB of VCTAT in the embodiment of the present invention,
That is unit temperature VCTAT ratios VEB declines more, to improve comparator CMP2Accuracy of detection so that temperature compensation point
More precisely.
In the embodiment of the present invention, by controlling resistance R2-R10The proportionate relationship of resistance can flexibly adjust each benchmark electricity
The temperature coefficient for pressing size and VCTAT, to control the changed condition of enable signal, to flexibly adjust temperature compensation point
With overheat protector point, lower mask body introduces the specific implementation of temperature compensation function and overheat protector function.
When chip temperature is less than T1When, so that VCTAT is more than VOP, comparator CMP2 exports high level, then enable signal VSEL
For high level, enable signal _ VSEL is low level, M2Pipe is connected, M3Pipe ends, and VOP is connected to amplifier OP4Normal phase input end；Transmission
Door TG1Conducting, transmission gate TG2Shutdown, VREF3It is connected to comparator CMP1Inverting input makes VEB be more than VREF3, comparator CMP1
High level is exported, then enable signal _ OTP is high level, and enable signal OTP is low level, transmission gate TG3Conducting, M4Pipe ends,
M5Pipe is connected, resistance R11On voltage be VOP, then chip output current, because reference voltage V OP is substantially not
It varies with temperature, so chip output current IOUT is constant.
When chip temperature is more than T1When, so that VCTAT is less than VOP, comparator CMP2 exports low level, then enable signal VSEL
For low level, enable signal _ VSEL is high level, M2Pipe ends, M3Pipe is connected, and VCTAT is connected to amplifier OP4Normal phase input end；It passes
Defeated door TG1Conducting, transmission gate TG2Shutdown, VREF3It is connected to comparator CMP1Inverting input makes VEB be more than VREF3, comparator
CMP1 exports high level, then enable signal _ OTP is high level, and enable signal OTP is low level, transmission gate TG3Conducting, M4Pipe is cut
Only, M5Pipe is connected, resistance R11On voltage be VCTAT, then chip output current, because of negative temperature coefficient
Voltage VCTAT increases with temperature and is reduced, so chip output current IOUT increases with temperature and reduced, to realize temperature
Compensation function.
When chip temperature is more than T2When, so that VEB is less than VREF3, comparator CMP1Low level is exported, then enable signal _ OTP
For low level, enable signal OTP is high level, transmission gate TG3Shutdown, M4Pipe is connected, M5Tube grid is pulled to ground, then M5Pipe is cut
Only, chip is turned off, and output current IO UT directly becomes zero.Because of transmission gate TG at this time1Shutdown, transmission gate TG2Conducting, VREF2
It is connected to comparator CMP1Inverting input, VREF2More than VREF3, then if temperature is just reduced to T2When, VEB is also less than
VREF2, OTP or high level, chip will not resume work, and only temperature continues to reduce, and VEB gradually increases, when VEB is more than
VREF2When, OTP can just become low level, and chip could restore to work normally, to realize overheat protector function.
The temperature-compensation circuit accuracy of detection of the present invention can reach 2mV/ DEG C or more, so as to more be accurately controlled
Temperature compensation point, and such as encounter extreme case chip temperature and continue to rise, when temperature reaches overheat protector point, close immediately
Chip, therefore the power consumption and protection driving circuit of circuit can be adjusted well, it can apply in a variety of contexts.
The above content is only used as detailed description of the invention, must not believe that present invention is limited only to above explanations.For this
For the personnel of technical field that the present invention belongs to, under the premise of not departing from the invention thinking of the present invention, some can be made and changed
Into or replace, but all belong to the scope of protection of the present invention.
Claims (11)
1. a kind of temperature-compensation circuit, which is characterized in that including reference voltage generation module, function of temperature compensation control module and constant current
Module；The reference voltage generation module generates various reference voltages；The function of temperature compensation control module and reference voltage compare,
Realize that temperature compensation function, the constant flow module make chip export constant electric current.
2. temperature-compensation circuit according to claim 1, which is characterized in that the reference voltage generation module includes band gap
Benchmark BANDGAP, operational amplifier OP1, operational amplifier OP2With first resistor group, the band-gap reference BANDGAP exports VBG
It is connected to the operational amplifier OP1Normal phase input end, the operational amplifier OP1Output end is connected by the first resistor group
It is connected to ground.
3. temperature-compensation circuit according to claim 2, which is characterized in that the first resistor group includes resistance R1, resistance
R2, resistance R3, resistance R4, resistance R5With resistance R6,
The resistance R1With the resistance R2Tie point be connected to the operational amplifier OP1Inverting input；
The resistance R2With the resistance R3Tie point be connected to the operational amplifier OP2Normal phase input end；
The operational amplifier OP2Inverting input is connected with output end and output reference voltage VREF1；
The resistance R3With the resistance R4Tie point output reference voltage VREF2；
The resistance R4With the resistance R5Tie point output reference voltage VREF3；
The resistance R5With the resistance R6Tie point output reference voltage VOP.
4. temperature-compensation circuit according to claim 3, which is characterized in that the function of temperature compensation control module includes operation
Amplifier OP3, comparator CMP1, comparator CMP2, transmission gate TG1, transmission gate TG2, phase inverter group, triode PNP1, PMOS tube
M1, second resistance group, capacitance；The PMOS tube M1Source electrode is connected to power vd D, and grid connects bias voltage VBIAS, drain electrode and
The triode PNP1Emitter is connected, the triode PNP1Base stage and collector are connected to ground, the reference voltage
VREF1It is connected to ground by the second resistance group.
5. temperature-compensation circuit according to claim 4, which is characterized in that the capacitance includes capacitance C1, capacitance C2, electricity
Hold C3With capacitance C1；
The second resistance group includes resistance R7, resistance R8, resistance R9With resistance R10；
The PMOS tube M1Drain electrode and the triode PNP1The tie point of emitter is connected to the operational amplifier OP3Positive
Input terminal, and pass through the capacitance C1It is connected to ground, the resistance R7With the resistance R8Tie point be connected to the operation
Amplifier OP3Inverting input, the resistance R8With the resistance R9Tie point be connected to the operational amplifier OP3Output
End, the resistance R9With the resistance R10Tie point output negative temperature coefficient voltage VCTAT；The transmission gate TG2Input terminal
Meet the reference voltage V REF2, the transmission gate TG2Output end is connected to the comparator CMP1Inverting input, and pass through
The capacitance C2It is connected to ground；The transmission gate TG1Input terminates the reference voltage V REF3, the transmission gate TG1Output end
It is connected to comparator CMP1Inverting input；The comparator CMP1Normal phase input end is connected to the PMOS tube M1Drain electrode and institute
State triode PNP1The tie point of emitter.
6. temperature-compensation circuit according to claim 5, which is characterized in that the phase inverter group includes phase inverter INV1, it is anti-
Phase device INV2, phase inverter INV3With phase inverter INV4,
The comparator CMP1Output end passes through the phase inverter INV1Enable signal OTP is generated, the enable signal OTP passes through
The phase inverter INV2Generate enable signal _ OTP；Negative temperature coefficient voltage VCTAT is connected to the comparator CMP2Positive inputs
End, and pass through the capacitance C3It is connected to ground；The reference voltage V OP is connected to the comparator CMP2Inverting input, and
And pass through the capacitance C4It is connected to ground；The comparator CMP2Output end passes through the phase inverter INV3Generation enable signal _
VSEL, the enable signal _ VSEL pass through the phase inverter INV4Generate enable signal VSEL.
7. temperature-compensation circuit according to claim 6, which is characterized in that the constant flow module includes NMOS tube group, fortune
Calculate amplifier OP4, transmission gate TG3With resistance R11, the NMOS tube group includes NMOS tube M2, NMOS tube M3, NMOS tube M4And NMOS
Pipe M5, NMOS tube M2Grid meets the enable signal VSEL, and drain electrode meets the reference voltage V OP, and source electrode meets amplifier OP4Positive is defeated
Enter end；NMOS tube M3Grid meets enable signal _ VSEL, and drain electrode meets reference voltage V CTAT, and source electrode meets amplifier OP4Normal phase input end；
Transmission gate TG3Input terminates the operational amplifier OP4Output end, output terminate the NMOS tube M4Drain electrode；The operation amplifier
Device OP4Inverting input passes through the resistance R11Ground connection；The NMOS tube M4Grid meets the enable signal OTP, the NMOS
Pipe M4Source electrode is grounded；The NMOS tube M5Grid meets the transmission gate TG3Output end, the NMOS tube M5Source electrode passes through the electricity
Hinder R11Ground connection, the NMOS tube M5Source electrode exports IOUT, connects external loading.
8. a kind of temperature-compensation method, which is characterized in that the temprature control method is utilized as described in claim 3-8 is any
Temperature-compensation circuit, the function of temperature compensation control module by generate negative temperature coefficient voltage VCTAT, and with reference voltage V OP
Compare, by by triode PNP1Emitter and the voltage difference VEB of the base stage and reference voltage V REF2Or the reference voltage
VREF3It is compared, realizes temperature-compensating.
9. temperature-compensation method according to claim 8, which is characterized in that
When chip temperature is less than T1When, so that the reference voltage V CTAT is more than the reference voltage V OP, the comparator CMP2 is defeated
Go out high level, the NMOS tube M2Pipe is connected, the NMOS tube M3Pipe ends, and the reference voltage V OP is connected to the operation amplifier
Device OP4Normal phase input end；The transmission gate TG1Conducting, the transmission gate TG2Shutdown, the reference voltage V REF3It is connected to described
Comparator CMP1Inverting input makes VEB be more than the reference voltage V REF3, the comparator CMP1High level is exported, it is described
Transmission gate TG3Conducting, the NMOS tube M4Pipe ends, the NMOS tube M5Pipe is connected, the resistance R11On voltage be VOP, core
Piece output current。
10. temperature-compensation method according to claim 8, which is characterized in that when chip temperature is more than T1When, make the base
Quasi- voltage VCTAT is less than the reference voltage V OP, and the comparator CMP2 exports low level, the NMOS tube M2Pipe ends, institute
State NMOS tube M3Pipe is connected, and the reference voltage V CTAT is connected to the operational amplifier OP4Normal phase input end；The transmission gate
TG1Conducting, the transmission gate TG2Shutdown, the reference voltage V REF3It is connected to the comparator CMP1Inverting input makes VEB
More than the reference voltage V REF3, the comparator CMP1 outputs high level, the transmission gate TG3Conducting, the NMOS tube M4
Pipe ends, the NMOS tube M5Pipe is connected, the resistance R11On voltage be the negative temperature coefficient voltage VCTAT, chip is defeated
Go out electric current。
11. temperature-compensation method according to claim 8, which is characterized in that when chip temperature is more than T2When, so that VEB is less than
The reference voltage V REF3, the comparator CMP1Export low level, the transmission gate TG3Shutdown, the NMOS tube M4Pipe is led
It is logical, the NMOS tube M5Pipe ends, and chip is turned off, and output current IO UT becomes zero.
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| CN201810549335.7A CN108646844A (en) | 2018-05-31 | 2018-05-31 | A kind of temperature-compensation circuit, temperature-compensation method |
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| CN110285890A (en) * | 2019-06-29 | 2019-09-27 | 南京亚克电子有限公司 | A kind of temperature-sensing system under complex electromagnetic environment |
| CN110843598A (en) * | 2019-11-18 | 2020-02-28 | 珠海格力电器股份有限公司 | Temperature acquisition compensation method and circuit and battery management system of electric equipment |
| CN112764450A (en) * | 2021-04-08 | 2021-05-07 | 坤元微电子(南京)有限公司 | Reference voltage source circuit and low dropout regulator |
| CN114326911A (en) * | 2022-01-04 | 2022-04-12 | 长江存储科技有限责任公司 | Reference voltage circuit and three-dimensional memory |
| WO2024036744A1 (en) * | 2022-08-15 | 2024-02-22 | 长鑫存储技术有限公司 | Power supply circuit and chip |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110285890A (en) * | 2019-06-29 | 2019-09-27 | 南京亚克电子有限公司 | A kind of temperature-sensing system under complex electromagnetic environment |
| CN110285890B (en) * | 2019-06-29 | 2020-12-15 | 南京亚克电子有限公司 | Temperature sensing system under complex electromagnetic environment |
| CN110843598A (en) * | 2019-11-18 | 2020-02-28 | 珠海格力电器股份有限公司 | Temperature acquisition compensation method and circuit and battery management system of electric equipment |
| CN112764450A (en) * | 2021-04-08 | 2021-05-07 | 坤元微电子(南京)有限公司 | Reference voltage source circuit and low dropout regulator |
| CN114326911A (en) * | 2022-01-04 | 2022-04-12 | 长江存储科技有限责任公司 | Reference voltage circuit and three-dimensional memory |
| CN114326911B (en) * | 2022-01-04 | 2023-09-26 | 长江存储科技有限责任公司 | Reference voltage circuit and three-dimensional memory |
| WO2024036744A1 (en) * | 2022-08-15 | 2024-02-22 | 长鑫存储技术有限公司 | Power supply circuit and chip |
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Application publication date: 20181012 |