CN108642567A - A kind of single crystal growing furnace - Google Patents
A kind of single crystal growing furnace Download PDFInfo
- Publication number
- CN108642567A CN108642567A CN201810640621.4A CN201810640621A CN108642567A CN 108642567 A CN108642567 A CN 108642567A CN 201810640621 A CN201810640621 A CN 201810640621A CN 108642567 A CN108642567 A CN 108642567A
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- Prior art keywords
- furnace
- single crystal
- crystal growing
- furnace chamber
- reflecting plate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This application provides a kind of single crystal growing furnaces, which is characterized in that including：Furnace body, secondary furnace chamber cleaning device, graphite crucible, lower reflecting plate, argon gas measuring instrument, diversion pipe, heater, crucible axis, furnace hearth plate, venthole, heater electrode, metal charge cylinder；The heater base installs the lower reflecting plate；The diversion pipe is welded on the furnace body upper right side, and the heater is mounted on around the graphite crucible, and the graphite crucible is fixed in the crucible axis；The venthole is mounted on the lower left side of the furnace body, and the furnace hearth plate is fixed on the furnace bottom end, and the pair furnace chamber cleaning device support is fitted in secondary furnace chamber inner wall, and the metal charge cylinder is connected with the seedholder in single crystal growing furnace；The advantages of the application, is, simplifies furnace chamber cleaning, shortens the production cycle, simplifies cumbersome charging process, and secondary charging process reduces the pollution of monocrystalline silicon growing environment.
Description
Technical field
This application involves monocrystalline silicon manufacturing field more particularly to a kind of single crystal growing furnaces.
Background technology
It is excessively numerous that single crystal growing furnace currently on the market pollutes larger and process during secondary charging to the growth of monocrystalline silicon
It is trivial, the metering of raw material addition is difficult to hold, has seriously affected production efficiency and product quality；
Monocrystalline silicon is more stringent for the indoor environmental requirement of single crystal growing furnace in growth course, therefore, clear in single crystal growing furnace
Clean work is particularly important the quality control and furnace body service life of monocrystalline silicon, but the cleaning of single crystal growing furnace is deposited at present
In following several difficult points：The cleaning area of secondary furnace chamber is larger, cleaning difficulty is higher, cleaning process is excessively cumbersome.
Therefore, how for the above-mentioned prior art existing disadvantage carries out research and development improvement, is actually exerted needed for relevant industry
Power research and development target, the application designer in view of this, be think and creation idea, designed then with experience for many years, pass through
It is multi-party to inquire into and study sampling test, and improvement is repeatedly corrected, it is releasing the application.
Invention content
(1) technical problems to be solved
In view of above-mentioned technical problem, this application provides a kind of single crystal growing furnaces.
(2) technical solution
This application provides a kind of single crystal growing furnaces, which is characterized in that including：Furnace body, secondary furnace chamber cleaning device, graphite crucible,
Lower reflecting plate, argon gas measuring instrument, diversion pipe, heater, crucible axis, furnace hearth plate, venthole, heater electrode, metal charge cylinder；
The heater base installs the lower reflecting plate；The diversion pipe is welded on the furnace body upper right side, the heater installation
Around the graphite crucible, the graphite crucible is fixed in the crucible axis；The venthole is mounted on the furnace body
Lower left side, the furnace hearth plate are fixed on the furnace bottom end, and the pair furnace chamber cleaning device support is fitted in secondary furnace chamber inner wall, described
Metal charge cylinder is connected with the seedholder in single crystal growing furnace；
The furnace body is divided into main furnace chamber and secondary furnace chamber, and the pair furnace chamber is located at the main furnace chamber upper end, firehole welding installation
On the upper left side of the secondary furnace chamber；The argon gas measuring instrument welding is mounted on the secondary furnace chamber upper right side, and valve is mounted on described
Diversion pipe is located at the outer end of the furnace body；
The pair furnace chamber cleaning device is that umbrella is by push rod, hairbrush, supporting rod, rivet, mobile jib, infrared scanning dress
Set, feedback controller composition, push rod is welded on the top of the mobile jib, the supporting rod by rivet on push rod, it is described
Hairbrush is connected to the supporting rod end, and the infrared scanner is mounted on the mobile jib top, the feedback controller
On the mobile jib between the push rod and the supporting rod.
In some embodiments of the present application, the graphite crucible is supported in by the crucible axis in main furnace chamber, described to add
Hot device is L-shaped to be distributed in the graphite crucible both sides, and the heater base connects two heater electrodes.
In some embodiments of the present application, heat-preservation cylinder is fixed on the inside of the main furnace chamber, and reflecting plate is fixed on heat-preservation cylinder
Inside.
In some embodiments of the present application, the lower reflecting plate is opened there are five one circular hole of square hole, the lower reflecting plate
Lower space is filled up with PAN type graphite felts.
In some embodiments of the present application, the lower reflecting plate be mounted on the furnace hearth plate above, the furnace hearth plate with
Two Auxiliary support axis are welded between the lower reflecting plate.
In some embodiments of the present application, the venthole is mounted on the furnace body lower left side and passes through lower reflection successively
Plate, reflecting plate, heat-preservation cylinder lead to outside stove.
In some embodiments of the present application, the metal charge cylinder is by the pull rod, retainer plate, bracing ring, positioning
Circle, outer ring composition；The pull rod is connected with the seedholder in single crystal growing furnace, the pull rod and the retainer plate, the positioning
Circle is slidably connected, and the bracing ring is welded on the outer ring outer end.
In some embodiments of the present application, the pair furnace chamber top is equipped with switchable fire door, secondary furnace chamber sanitizer cartridge
Four hairbrush are adjacent to fire door pair furnace chamber.
In some embodiments of the present application, the supporting rod, the push rod respectively there are four and be correspondingly connected with.
In some embodiments of the present application, the lower reflection is the recessed circle of intermediate convex surrounding.
(3) advantageous effect
It can be seen from the above technical proposal that the application at least has the advantages that one of them：
(1) heater is presented L-shaped and is distributed in graphite crucible both sides, can heat the both sides and bottom of graphite crucible simultaneously
End, the rate of heat addition faster, reduces energy expenditure under identical power；
(2) reflecting plate lower space is filled with graphite felt under, strengthen reflecting plate heat reflection, enhancing heat-insulating property,
Reduce energy loss；
(3) secondary furnace chamber cleaning device is in umbrella, can carry out cleaning according to the diameter change of secondary furnace chamber, improve list
The growing environment of crystal silicon simplifies furnace chamber cleaning, shortens the production cycle；
(4) metal charge cylinder is used to be used as feeding tool, it is smaller to the limitation of the form of raw material, and added by change metal
The material of barrel can reduce pollution level, realize secondary charging；
Description of the drawings
Fig. 1 is the cleaning schematic diagram of the embodiment of the present application.
Fig. 2 is the charging schematic diagram of the embodiment of the present application.
Fig. 3 is the lower reflecting plate vertical view of the embodiment of the present application.
Fig. 4 is the metal charge cylinder side view and vertical view of the embodiment of the present application.
Fig. 5 is the secondary furnace chamber cleaning device vertical view of the embodiment of the present application.
【The application main element symbol description】
1, furnace body；2, furnace chamber cleaning device is cut to pieces；3, heat-preservation cylinder；
4, reflecting plate；5, black-fead crucible；6, lower reflecting plate；
7, valve；8, argon gas measuring instrument；9, diversion pipe；
10, heater；11, crucible axis；12, Auxiliary support axis；
13, furnace hearth plate；14, venthole；15, heater electrode；
16, metal charge cylinder；17, firehole；161, pull rod；
162, retainer plate；163, bracing ring；164, locating ring；
165, outer ring；21, push rod；22, hairbrush；
23, supporting rod；24, rivet；25, mobile jib；
26, infrared scanner；27, feedback controller.
Specific implementation mode
This application provides a kind of single crystal growing furnaces, to make the purpose, technical scheme and advantage of the application be more clearly understood, with
Under in conjunction with specific embodiments, and with reference to attached drawing, the application is further described.
Specific embodiment
A kind of single crystal growing furnace, which is characterized in that including：Furnace body 1, secondary furnace chamber cleaning device 2, graphite crucible 5, lower reflecting plate 6,
Argon gas measuring instrument 8, diversion pipe 9, heater 10, crucible axis 11, furnace hearth plate 13, venthole 14, heater electrode 15, metal charge
Cylinder 16；
As shown in Figure 1 and Figure 2, the firehole 17 is welded on the upper left side of the furnace body 1, monitors in real time in process
The machining state of monocrystalline silicon, mounted on the upper right side of the furnace body 1, measurement head stretches into secondary furnace chamber for the welding of argon gas measuring instrument 8
The concentration of argon gas is detected, the diversion pipe 9 stretches into main furnace chamber by secondary furnace chamber, argon gas is delivered in furnace chamber, when concentration is more than
Signal is sent out when preset value, the flowing of argon gas is controlled by the valve 7 on the diversion pipe 9 at this time, true
Argon gas usage amount is rationally controlled in the case of declaration form crystal silicon normal growth, reduces unnecessary loss；The diversion pipe 9 be by
Made by isostatic pressing formed graphite, molybdenum liner is added in graphite guide shell inner surface, using the high temperature resistant of molybdenum, thermal capacitance is big, heat radiation compared with
Small characteristic increases crystal bar longitudinal temperature gradient, improves solid liquid interface crystallization rate, further increases pulling rate and reduces power consumption.
As shown in Figure 1 and Figure 2, the graphite crucible 5 is fixedly connected with the crucible axis 11, is mounted on the center of furnace chamber, institute
Totally two left and right sides for being mounted on the graphite crucible 5 of L-shaped heater 10 are stated, two of 10 bottom of the heater are mounted on
The heater electrode 15 is run simultaneously, and the raw material inside the graphite crucible 5 is melted into form easy to process and dense
Degree, faster, energy expenditure is less for the rate of heat addition of the heater 10 under identical power；Wrap up the thermal insulating material of heat-preservation cylinder 3
In material, inside is wrapped up using viscose glue fundamental mode graphite felt, and outside uses PAN type graphite felts, in the heat-preservation cylinder 3 and the heater
Reflecting plate 4 is installed, the heat insulation effect for improving furnace chamber reduces energy consumption between 10.
As shown in Figure 2 and Figure 3, lower reflecting plate 6 being housed in the bottom of heater 10, the lower reflecting plate 6 is circle, according to
The geomery processing five of the heater electrode 15, the venthole 14, the crucible axis 11, the Auxiliary support axis 12
Square hole and a circular hole, the crucible axis 11 are connect by circular hole with the graphite crucible 5,15 side of passing through of the heater electrode
The heater 10 is heated in hole, and the lower reflecting plate 6 is supported on institute by the auxiliary bearing axis 12 by two square holes
It states on furnace hearth plate 13,6 lower space of lower reflecting plate is filled up with 8 layers of PAN type graphite felts, improves the heat insulation effect of heat-preservation cylinder,
The size in specific hole can avoid carbon felt and contact the security risk for occurring striking sparks with heater electrode simultaneously.
As shown in Figure 1, Figure 2, Fig. 4, shown, the venthole 14 be mounted on the lower left corner of the furnace body 1 by lower reflecting plate 6,
The exhaust gas in stove is discharged for reflecting plate 4, heat-preservation cylinder 5；Pull rod 161 can be connected with the seedholder in single crystal growing furnace, to realize
The moving up and down in single crystal growing furnace of metal charge cylinder 16, the pull rod 161 are sliding on the retainer plate 162, the locating ring 164
Dynamic, bracing ring 3 is mainly in contact with the limit switch in single crystal growing furnace, and 161 bottom of pull rod is welded with the circle to match with outer ring 165
When the conical surface, circular conical surface and outer ring 165 are in contact, semi-enclosed cylinder can be formed, realizes the storage of monocrystalline silicon material；Pull rod 161 can
To be moved left and right in retainer plate 162 and locating ring 164, when lifting pull rod 161 along vertical direction, 161 bottom of pull rod
Taper surface is in contact with outer ring 165, at this point, will be added in gap of the blocky silicon material between retainer plate 162 and outer ring 165 outer
In circle 165, until filling, to realize the secondary charging of metal charge cylinder 16.
As shown in Figure 1, shown in Figure 5, the top on mobile jib 25 is connected to 4 symmetrical supporting rods 23, push rods 21, the support
Rivet 24 is carried on bar 23, the push rod 21,23 end of the supporting rod installs four hairbrush 22 and is tightly attached to secondary furnace chamber inner wall, institute
State infrared scanner 26 be mounted on the mobile jib 25 end, the feedback controller 26 be mounted on the supporting rod 23,
On the mobile jib 25 between the push rod 21；During cleaning, the infrared scanner 26 is for scanning secondary furnace chamber
The impurity of inner wall, and scanning result is fed back into the feedback control respectful 26, the feedback controller 26 sends out signal, and control pushes away
Bar 21 pushes supporting rod 23 to be in close contact the hairbrush 22 and the concubine inner wall on cleaner, by the hairbrush 22 with it is described
Relative motion between secondary furnace chamber inner wall attachment and the mechanical force that generates remove attachment from secondary furnace chamber inner wall, to realize
The cleaning work of concubine inner wall.
So far, attached drawing is had been combined the present embodiment is described in detail.According to above description, those skilled in the art
There should be clear understanding to the application.
It should be noted that in attached drawing or specification text, the realization method for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various concrete structures, shape or the mode mentioned in embodiment.
It should also be noted that, the demonstration of the parameter comprising particular value can be provided herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
Only it is the direction of refer to the attached drawing to term, such as "upper", "lower", "front", "rear", "left", "right" etc., is not used for limiting this
The protection domain of application.In addition, unless specifically described or the step of must sequentially occur, the sequences of above-mentioned steps there is no restriction in
It is listed above, and can change or rearrange according to required design.And above-described embodiment can be based on design and reliability
Consider, the collocation that is mixed with each other is used using or with other embodiment mix and match, i.e., the technical characteristic in different embodiments can be with
Freely form more embodiments.
Particular embodiments described above has carried out further in detail the purpose, technical solution and advantageous effect of the application
It describes in detail bright, it should be understood that the foregoing is merely the specific embodiment of the application, is not intended to limit this application, it is all
Within spirit herein and principle, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the application
Within the scope of shield.
Claims (10)
1. a kind of single crystal growing furnace, which is characterized in that including：Furnace body (1), secondary furnace chamber cleaning device (2), graphite crucible (5), lower reflection
Plate (6), diversion pipe (9), heater (10), crucible axis (11), furnace hearth plate (13), venthole (14), adds argon gas measuring instrument (8)
Hot device electrode (15), metal charge cylinder (16)；Heater (10) bottom is installed by the lower reflecting plate (6)；The diversion pipe
(9) it is welded on the furnace body (1) upper right side, the heater (10) is mounted on around the graphite crucible (5), the graphite earthenware
Crucible (5) is fixed in the crucible axis (11)；The venthole (14) is mounted on the lower left side of the furnace body (1), the furnace bottom
Disk (13) is fixed on the furnace body (1) bottom end, and the pair furnace chamber cleaning device (2), which supports, is fitted in secondary furnace chamber inner wall, the gold
Belong to casing drum (16) with the seedholder in single crystal growing furnace to be connected；
The furnace body (1) is divided into main furnace chamber and secondary furnace chamber, and the pair furnace chamber is located at the main furnace chamber upper end, firehole (17) welding peace
Mounted in the upper left side of the secondary furnace chamber；Argon gas measuring instrument (8) welding is mounted on the secondary furnace chamber upper right side, valve (7) peace
It is located at the outer end of the furnace body (1) mounted in the diversion pipe (9)；
The pair furnace chamber cleaning device (2) is umbrella, is by push rod (21), hairbrush (22), supporting rod (23), rivet (24), master
Supporting rod is welded on bar (25), infrared scanner (26), feedback controller (27) composition, the top of the mobile jib (25)
(23), the push rod (21) is riveted on by rivet (24) on supporting rod (23), and the hairbrush (22) is connected to the supporting rod
(23) end, the infrared scanner (26) are mounted on the mobile jib (25) top, feedback controller (27) installation
On the mobile jib (25) between the push rod (21) and the supporting rod (23).
2. a kind of single crystal growing furnace according to claim 1, which is characterized in that the heater (10) is L-shaped be distributed in it is described
Graphite crucible (5) both sides, heater (10) bottom connect two heater electrodes (15).
3. a kind of single crystal growing furnace according to claim 1 or 2, which is characterized in that heat-preservation cylinder (3) is fixed in the main furnace chamber
Side, reflecting plate (4) are fixed on the inside of the heat-preservation cylinder (3).
4. a kind of single crystal growing furnace according to claim 1, which is characterized in that the lower reflecting plate (6) is opened there are five square hole one
A circular hole, lower reflecting plate (6) lower space are filled up with PAN type graphite felts.
5. a kind of single crystal growing furnace according to claim 1, which is characterized in that the lower reflecting plate (10) is mounted on the furnace bottom
Above disk (13), two Auxiliary support axis (12) are welded between the furnace hearth plate (13) and the lower reflecting plate (10).
6. a kind of single crystal growing furnace according to claim 1, which is characterized in that the venthole (14) is mounted on the furnace body
(1) lower left side is passed through lower reflecting plate (6), reflecting plate (4), heat-preservation cylinder (5) and is led to outside stove successively.
7. a kind of single crystal growing furnace according to claim 1, which is characterized in that the metal charge cylinder (16) is by the pull rod
(161), retainer plate (162), bracing ring (163), locating ring (164), outer ring (165) composition；The pull rod (161) and single crystal growing furnace
In seedholder be connected, the pull rod (161) is slidably connected with the retainer plate (162), the locating ring (164), institute
It states bracing ring (163) and is welded on the outer ring (165) outer end.
8. a kind of single crystal growing furnace according to claim 1, which is characterized in that the pair furnace chamber top is equipped with switchable stove
Mouthful, four hairbrush (22) of secondary furnace chamber cleaning device (2) are adjacent to secondary furnace chamber inner wall.
9. a kind of single crystal growing furnace according to claim 1, which is characterized in that the supporting rod (23), the push rod (21) point
There are four not and it is correspondingly connected with.
10. a kind of single crystal growing furnace according to claim 4, which is characterized in that the lower reflecting plate (6) is intermediate convex surrounding
Recessed circle.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810640621.4A CN108642567A (en) | 2018-06-19 | 2018-06-19 | A kind of single crystal growing furnace |
| PCT/CN2019/086877 WO2019242431A1 (en) | 2018-06-19 | 2019-05-14 | Monocrystalline silicon furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810640621.4A CN108642567A (en) | 2018-06-19 | 2018-06-19 | A kind of single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108642567A true CN108642567A (en) | 2018-10-12 |
Family
ID=63753080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810640621.4A Pending CN108642567A (en) | 2018-06-19 | 2018-06-19 | A kind of single crystal growing furnace |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108642567A (en) |
| WO (1) | WO2019242431A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019242431A1 (en) * | 2018-06-19 | 2019-12-26 | 卡姆丹克太阳能（江苏）有限公司 | Monocrystalline silicon furnace |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112030230B (en) * | 2020-08-11 | 2022-04-15 | 深圳市凯新达电子有限公司 | Semiconductor material processing system |
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|---|---|---|---|---|
| CN108642567A (en) * | 2018-06-19 | 2018-10-12 | 卡姆丹克太阳能（江苏）有限公司 | A kind of single crystal growing furnace |
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2018
- 2018-06-19 CN CN201810640621.4A patent/CN108642567A/en active Pending
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2019
- 2019-05-14 WO PCT/CN2019/086877 patent/WO2019242431A1/en active Application Filing
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| CN201871519U (en) * | 2010-06-13 | 2011-06-22 | 宋树建 | Umbrella-shaped barrel-washing brush |
| CN101886290A (en) * | 2010-07-13 | 2010-11-17 | 王敬 | Heat-preservation cylinder for single crystal furnace and single crystal furnace with same |
| CN201817573U (en) * | 2010-07-13 | 2011-05-04 | 王敬 | Warmth-keeping cylinder for single-crystal furnace and single-crystal furnace therewith |
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| Publication number | Publication date |
|---|---|
| WO2019242431A1 (en) | 2019-12-26 |
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Application publication date: 20181012 |