CN108642509B - Regeneration method of aluminum element in semiconductor wafer film process etching process - Google Patents
Regeneration method of aluminum element in semiconductor wafer film process etching process Download PDFInfo
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- CN108642509B CN108642509B CN201810306125.5A CN201810306125A CN108642509B CN 108642509 B CN108642509 B CN 108642509B CN 201810306125 A CN201810306125 A CN 201810306125A CN 108642509 B CN108642509 B CN 108642509B
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- aluminum piece
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
Abstract
The invention provides a regeneration method of an aluminum piece in a semiconductor wafer film process etching process. The method utilizes the characteristic of larger coefficient of thermal expansion of aluminum and carries out regeneration on the aluminum piece by a method of expansion with heat and contraction with cold, thereby reducing the cost increase caused by adopting high-cleanliness lotion on one hand, effectively preventing secondary pollution of the aluminum piece caused by residual lotion on the other hand and having wide applicability.
Description
Technical Field
The invention relates to a regeneration method of an aluminum piece in a semiconductor wafer film process etching process.
Background
A wafer refers to a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and is called a wafer because it has a circular shape; various circuit device structures can be fabricated on a silicon wafer to form an IC product with specific electrical functions.
During wafer production, the components need to be reprocessed. The structure of the wafer aluminum element is generally simpler, and is mostly plate-shaped, but the regeneration is not suitable to be carried out by adopting a flushing method. Therefore, a physical regeneration method of aluminum parts in semiconductor wafer thin film process etching process is needed.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for regenerating an aluminum member in a semiconductor wafer thin film process etching process. The method utilizes the characteristic of larger coefficient of thermal expansion of aluminum and carries out regeneration on the aluminum piece by a method of expansion with heat and contraction with cold, thereby reducing the cost increase caused by adopting high-cleanliness lotion on one hand, effectively preventing secondary pollution of the aluminum piece caused by residual lotion on the other hand and having wide applicability.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the regeneration method of the aluminum piece in the semiconductor wafer film process etching process is characterized by comprising the following steps of:
1) heating the aluminum piece to 200 ℃, blowing nitrogen gas with the temperature of minus 30 ℃ and the pressure of 5MPa on the surface of the aluminum piece, and then heating the aluminum piece to 100 ℃; the process is used for preprocessing the aluminum piece through expansion with heat and contraction with cold.
2) Uniformly spraying a viscous coating on the surface of the aluminum piece, attaching a PE plastic film to the surface of the aluminum piece, and cooling the aluminum piece to 50 ℃ until the viscous coating is hardened;
3) rapidly freezing the aluminum part obtained in the step 2) to below-50 ℃, and then heating to the temperature of-25 ℃ to-30 ℃; 2) and 3) in the process, after the aluminum piece is heated and then elongated, the aluminum piece is sprayed with the starch diluent and attached with the PE plastic film, and then the aluminum piece is shortened at low temperature, but the shortening variable of the starch hardened layer attached to the PE material film is low, so that the aluminum piece is attached to the starch hardened layer after being polluted and is separated from the surface of the aluminum piece. In the process, the PE plastic film and the starch hardened layer are hardened and become brittle at low temperature, so that the PE plastic film and the starch hardened layer are cracked.
4) Arranging an adsorption layer 3-5mm above each surface of the aluminum piece, and colliding the surfaces of the aluminum piece by adopting a 50-55 MPa gas column, wherein the collision angle of the gas column is less than 120 degrees; the process continues to blow off the incompletely peeled PE plastic film and the starch hardened layer. The adsorption layer can adopt a viscous adsorption layer, thereby avoiding secondary pollution.
5) And (4) repeating the steps 3) to 4) for 2-5 times, naturally heating the aluminum piece in a drying chamber at 20 ℃ until the temperature is not increased any more, and finishing the regeneration process.
As a further improvement of the scheme, the step 3) adopts liquid nitrogen freezing. The setting, freezing speed is fast, and cooling efficiency is high.
As a further improvement of the scheme, the gas column in the step 4) adopts a nitrogen gas column at the temperature of between 30 ℃ below zero and 40 ℃ below zero. This arrangement can avoid contamination of other magazines in the body.
As a further improvement of the scheme, in the step 2), the air column collides at a position which is 0.2-0.5mm above each surface of the aluminum piece. The arrangement can utilize local turbulence and vacuum generated by air flow collision to blow off the PE plastic film and the starch hardening layer.
As a further improvement of the scheme, the air column moves up and down within the range of 0.2-0.5mm above the surface of the aluminum piece in the collision process of the air column. This setting is more favorable to the regeneration, and can be better not hard up deep pollutant.
As a further improvement of the scheme, the aluminum piece continuously rotates and changes the angle with the gas column in the step 4). This setting can high-efficient blow off, avoids starch sclerosis layer to remain.
As a further improvement of the scheme, the viscous coating is made of starch diluent. The device has low cost, no corrosion and good regeneration effect.
Detailed Description
The conception, the specific structure, and the specific effects of the present invention will be described clearly and completely with reference to the following embodiments, so that the objects, the features, and the effects of the present invention can be fully understood. The technical characteristics of the invention can be combined interactively without conflict.
The regeneration method of the aluminum piece in the semiconductor wafer film process etching process is characterized by comprising the following steps of:
1) heating the aluminum piece to 200 ℃, blowing nitrogen gas with the temperature of minus 30 ℃ and the pressure of 5MPa on the surface of the aluminum piece, and then heating the aluminum piece to 100 ℃;
2) uniformly spraying starch diluent on the surface of the aluminum piece, attaching a PE plastic film on the surface of the aluminum piece, and cooling the aluminum piece to 50 ℃ until the starch diluent is hardened;
3) rapidly freezing the aluminum piece obtained in the step 2) to below-50 ℃ by adopting liquid nitrogen, and then heating to the temperature of-25 ℃ to-30 ℃;
4) arranging an adsorption layer 3-5mm above each surface of the aluminum piece, and colliding 0.3mm above each surface of the aluminum piece by adopting a nitrogen gas column with the pressure of 53MPa and the temperature of-35 ℃, wherein the collision angle of the gas column is less than 120 degrees, the gas column moves up and down within the range of 0.2-0.5mm above each surface of the aluminum piece in the collision process of the gas column, and the aluminum piece continuously rotates and changes the angle with the gas column;
5) and (4) repeating the steps 3) to 4) for 2-5 times, naturally heating the aluminum piece in a drying chamber at 20 ℃ until the temperature is not increased any more, and finishing the regeneration process.
In the process, the range interval is small, and the fluctuation in the range does not influence the overall effect, so that only one representative value is taken in the range.
It should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the present invention.
Claims (1)
1. The regeneration method of the aluminum piece in the semiconductor wafer film process etching process is characterized by comprising the following steps of:
1) heating the aluminum piece to 200 ℃, blowing nitrogen gas with the temperature of minus 30 ℃ and the pressure of 5MPa on the surface of the aluminum piece, and then heating the aluminum piece to 100 ℃;
2) uniformly spraying a viscous coating prepared from starch diluent on the surface of the aluminum piece, attaching a PE plastic film on the surface of the aluminum piece, and cooling the aluminum piece to 50 ℃ until the viscous coating is hardened;
3) freezing the aluminum piece obtained in the step 2) by adopting liquid nitrogen to quickly freeze the aluminum piece to be below minus 50 ℃, and then heating the aluminum piece to be between minus 25 and minus 30 ℃;
4) arranging an adsorption layer 3-5mm above each surface of the aluminum piece, and colliding 50-55 MPa gas columns above each surface of the aluminum piece, wherein the collision angle of the gas columns is less than 120, the collision of the gas columns is 0.2-0.5mm above each surface of the aluminum piece, the gas columns adopt nitrogen gas columns at-30-40 ℃, and the gas columns move up and down within the range of 0.2-0.5mm above each surface of the aluminum piece in the collision process of the gas columns;
5) and (4) repeating the steps 3) to 4) for 2-5 times, naturally heating the aluminum piece in a drying chamber at 20 ℃ until the temperature is not increased, continuously rotating the aluminum piece and changing the angle with the gas column, and finishing the regeneration process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810306125.5A CN108642509B (en) | 2018-04-08 | 2018-04-08 | Regeneration method of aluminum element in semiconductor wafer film process etching process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810306125.5A CN108642509B (en) | 2018-04-08 | 2018-04-08 | Regeneration method of aluminum element in semiconductor wafer film process etching process |
Publications (2)
| Publication Number | Publication Date |
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| CN108642509A CN108642509A (en) | 2018-10-12 |
| CN108642509B true CN108642509B (en) | 2019-12-20 |
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| CN201810306125.5A Active CN108642509B (en) | 2018-04-08 | 2018-04-08 | Regeneration method of aluminum element in semiconductor wafer film process etching process |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129957A (en) * | 2009-12-24 | 2011-07-20 | 栗田工业株式会社 | Cleaning method |
| CN102186643A (en) * | 2008-08-21 | 2011-09-14 | 因诺瓦动力学股份有限公司 | Enhanced surfaces, coatings, and related methods |
| CN105063637A (en) * | 2015-07-29 | 2015-11-18 | 西北有色金属研究院 | Regeneration method of metal filter pipe |
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2018
- 2018-04-08 CN CN201810306125.5A patent/CN108642509B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102186643A (en) * | 2008-08-21 | 2011-09-14 | 因诺瓦动力学股份有限公司 | Enhanced surfaces, coatings, and related methods |
| CN102129957A (en) * | 2009-12-24 | 2011-07-20 | 栗田工业株式会社 | Cleaning method |
| CN105063637A (en) * | 2015-07-29 | 2015-11-18 | 西北有色金属研究院 | Regeneration method of metal filter pipe |
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| CN108642509A (en) | 2018-10-12 |
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