CN108630575A - Substrate board treatment and substrate processing method using same - Google Patents
Substrate board treatment and substrate processing method using same Download PDFInfo
- Publication number
- CN108630575A CN108630575A CN201810186810.9A CN201810186810A CN108630575A CN 108630575 A CN108630575 A CN 108630575A CN 201810186810 A CN201810186810 A CN 201810186810A CN 108630575 A CN108630575 A CN 108630575A
- Authority
- CN
- China
- Prior art keywords
- metal film
- liquid
- substrate
- metal
- containing precious
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 144
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 239000010970 precious metal Substances 0.000 claims abstract description 136
- 229910052751 metal Inorganic materials 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 121
- 239000007788 liquid Substances 0.000 claims abstract description 120
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 91
- 238000005530 etching Methods 0.000 claims abstract description 54
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000003814 drug Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000003321 amplification Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 238000010276 construction Methods 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 239000002585 base Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000002335 preservative effect Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229920001429 chelating resin Polymers 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Embodiments of the present invention provide the substrate board treatment and substrate processing method using same for the etching speed that metal film can be improved.The substrate board treatment of embodiment has：Containing precious metal components, there is the concaveconvex shape part comprising noble metal or Porous shape；And liquid supply part, supply liquid；And the protrusion of concaveconvex shape part or Porous shape is made to be contacted with special metal surface on one side, liquid is supplied to metal surface on one side and removes metal etch.
Description
[related application]
Present application was enjoyed with No. 2017-53310 (applying date of Japanese patent application case：On March 17th, 2017) and Japan
No. 2017-185305 (the applying date of patent application case：On September 26th, 2017) be basic application case priority.Present application is logical
Cross with reference to these basic application cases and include the full content of basic application case.
Technical field
Embodiments of the present invention are related to substrate board treatment and substrate processing method using same.
Background technology
As one of substrate processing method using same, known is the etching step that the metal film that will be formed on substrate removes.
Invention content
Embodiments of the present invention provide the substrate board treatment and substrate processing method using same of the etching more suitable for metal film.
The substrate board treatment of one embodiment has：Containing precious metal components, there is the concaveconvex shape portion comprising noble metal
Point or Porous shape；And liquid supply part, supply liquid；And make protrusion or the institute of the concaveconvex shape part on one side
It states Porous shape and is contacted with special metal surface, on one side supply the liquid to the metal surface and by the gold
Belong to etching to remove.
Description of the drawings
Fig. 1 is the schematic diagram of the substrate board treatment for indicating the 1st embodiment schematically constituted.
Fig. 2 is the enlarged drawing of the part amplification for the bottom surface that will contain precious metal components.
Fig. 3 (a) indicates the state before the etching process of substrate, (b) indicates the state after the etching process of substrate.
Fig. 4 is the schematic diagram of the substrate board treatment for indicating the 2nd embodiment schematically constituted.
Fig. 5 is the schematic diagram illustrated to the etching step of the substrate to the 2nd embodiment.
Fig. 6 is the schematic diagram of the substrate board treatment for indicating the 3rd embodiment schematically constituted.
Fig. 7 is by the enlarged drawing of substrate and the contact portion amplification containing precious metal components.
Fig. 8 is the schematic diagram of the substrate board treatment for indicating the 4th embodiment schematically constituted.
Fig. 9 is the enlarged drawing for amplifying the major part of substrate board treatment shown in Fig. 8.
Figure 10 (a) is the schematic diagram of the substrate board treatment for indicating the 5th embodiment schematically constituted, and is (b) along (a)
Shown in cutting line A-A sectional view.
Figure 11 (a) is the enlarged drawing containing precious metal components 10 of the 5th embodiment, is (b) hairy component shown in (a)
Enlarged drawing.
Figure 12 (a) is the schematic diagram of the substrate board treatment for indicating the 6th embodiment schematically constituted, and is (b) the 1st to contain
The enlarged drawing of precious metal components (c) is the 2nd enlarged drawing containing precious metal components.
Figure 13 (a) is the enlarged drawing for indicating the 1st change case containing precious metal components, is (b) to indicate that the 2nd contains precious metal components
Change case enlarged drawing.
Figure 14 is the schematic diagram of the substrate board treatment for indicating the 7th embodiment schematically constituted.
Figure 15 (a) indicates the state before the etching process of the substrate of the 7th embodiment, (b) indicates the etching process of substrate
State afterwards.
Figure 16 is disposed on the enlarged drawing of the hairy component containing precious metal components of the 8th embodiment.
Figure 17 (a) is the figure schematically constituted containing precious metal components for indicating the 9th embodiment, (b) and (c) indicates to carry
The change case of body.
Figure 18 (a) is the figure schematically constituted containing precious metal components for indicating the 10th embodiment, (b) is reticulate body
Enlarged drawing.
Figure 19 is by the enlarged drawing of the part amplification of the bottom surface containing precious metal components of the 11st embodiment.
Figure 20 (a)~(c) is the figure for the change case containing precious metal components for indicating the 11st embodiment.
Figure 21 is by the enlarged drawing of the part amplification of the bottom surface containing precious metal components of the 12nd embodiment.
Figure 22 is the exploded perspective view of grid laminate.
Figure 23 indicates the state in the etching process of the 12nd embodiment.
Specific implementation mode
Hereinafter, the embodiments of the present invention will be described with reference to the drawings.Present embodiment and the non-limiting present invention.
(the 1st embodiment)
Fig. 1 is the schematic diagram of the substrate board treatment for indicating the 1st embodiment schematically constituted.Substrate shown in FIG. 1
Processing unit 1 be substrate 100 processing unit, have containing precious metal components 10, liquid supply nozzle 20 (liquid supply part),
Holding member 30 (the 1st holding member) and holding member 31 (the 2nd holding member).
Fig. 2 is the enlarged drawing of the part amplification for the bottom surface that will contain precious metal components 10.In present embodiment, contain noble metal
Component 10 is made of porous parts such as such as polyvinyl alcohol (PVA), urethanes, teflon, ion exchange resin.Contain
The bottom surface of precious metal components 10 is formed as male and fomale(M＆F) as shown in Figure 2.When the spacing p of the protrusion in the male and fomale(M＆F) is narrow, liquid
200 are difficult to enter in male and fomale(M＆F).On the other hand, when spacing p is wide, there is the contact containing precious metal components 10 with substrate 100
Insufficient misgivings.It is therefore preferable that in the range of spacing p is tens of pm.In addition, when the height of male and fomale(M＆F) is too low, liquid 200
It is difficult to enter in male and fomale(M＆F).Therefore, in fact it is highly preferred that tens of μm or more.
The noble metal film 11 partially contacted with substrate 100 is provided in the male and fomale(M＆F).Noble metal film 11 is preferred to be wrapped
At least either containing such as platinum (Pt), golden (Au), silver-colored (Ag) and palladium (Pd).In addition, noble metal film 11 is for example, by sputter
Method, electroless plating method, CVD (Chemical Vapor Deposition, chemical vapor deposition) methods or ALD (Atomic
Layer Deposition, atomic layer deposition) film forming such as method is in the male and fomale(M＆F).Utilizing electroless plating method film forming noble metal
In the case of film 11, in order to improve the adhesion with noble metal film 11, preferably amberlite is being used containing precious metal components 10
Fat.In addition, when in the case where the porous part using teflon forms a film noble metal film 11 using sputtering method, by right in advance
Corona treatment is implemented on teflon surface, can maintain the tolerance to liquid 200 on one side, improves on one side and noble metal film 11
Adhesion.
It is back to Fig. 1, in present embodiment, liquid supply nozzle 20 includes to substrate 100 and the noble metal film 11
Contact portion sprays the nozzle of the liquid 200 of alkalinity.Liquid 200 is preferably the mixed liquor of alkalies and oxidant.Alkalies can
Use such as choline, ammonium hydroxide and sodium hydroxide.On the other hand, such as aquae hydrogenii dioxidi and Ozone Water can be used in oxidant.Separately
Outside, in order to improve etch effect, the temperature of the liquid 200 supplied from liquid supply nozzle 20 is preferably at 80 DEG C or so.But medicine
Liquid 200 is not limited to alkalinity, ingredient included in the noble metal film 11 according to etch target, or acid.
Holding member 30 can keep containing precious metal components 10 up and down.Holding member 30 is for example linked to elevating mechanism, or
It is configured to a part for the elevating mechanism.
Holding member 31 revolvably keeps substrate 100.Holding member 31 is for example linked to rotating mechanism, or is configured to this
The rotary shaft of rotating mechanism.Holding member 31 can also link with the platform of mounting substrate 100.
Secondly, with reference to Fig. 3 (a) and Fig. 3 (b), the construction of the substrate 100 as etching process object is illustrated.Fig. 3
(a) indicate that the state before the etching process of substrate 100, Fig. 3 (b) indicate the state after the etching process of substrate 100.
As shown in Fig. 3 (a), the substrate 100 before etching process is provided with metal film 101.Metal film 101 is set to lamination
On body 102.Metal film 101 be to form the pattern slit of laminate 102 (be in present embodiment perforation) in laminate 102 and
The mask being formed on laminate 102, such as include tungsten.The metal film 101 is as shown in Fig. 3 (b) by substrate board treatment 1
Etching process removes.
In laminate 102, it is arranged alternately insulating film 102a and conductive film 102b.Insulating film 102a includes such as silica
(SiO2).Conductive film 102b identical as metal film 101 includes tungsten.Conductive film 102b can be used for the wordline of such as three-dimensional storage.
In addition, the construction of substrate 100 is not limited to the construction, as long as to be formed with certain pattern persons.
Hereinafter, to using the substrate processing method using same of the substrate board treatment 1 of present embodiment to illustrate.Herein, to base
The etching step of plate 100 illustrates.
First, as shown in Figure 1, using holding member 30 by containing precious metal components 10 relative to being maintained at holding member 31
Substrate 100 declines, and the noble metal film 11 containing precious metal components 10 is thus made to be contacted with the metal film 101 of substrate 100.At this point, being
The laminate 102 of substrate 100, the in other words damage of pattern is avoided to be applied to the pressure containing precious metal components 10 of substrate 100
It is preferred that small as possible.
Secondly, liquid supply nozzle 20 sprays liquid to the contact portion of noble metal film 11 and the metal film 101 of substrate 100
200.At this point, noble metal film 11 is such as arranged shown in Fig. 3 (a) in the male and fomale(M＆F) containing precious metal components 10.Therefore, noble metal film 11
Protrusion is contacted with the metal film 101 for being arranged in each protrusion of pattern respectively, and liquid 200 enters to the recess portion and gold of noble metal film 11
The gap for belonging to film 101, to the metal film 101 of supply to each protrusion for being set to pattern.Galvanic corrosion is generated as a result, is promoted
The etching of metal film 101.
Thereafter, when making to rise containing precious metal components 10 using holding member 30, substrate 100 is made to revolve using holding member 31
Turn.Thereafter, make to decline containing precious metal components 10 again, supply liquid 200 from liquid supply nozzle 20, be thus formed in and last time
The metal film 101 of different positions is etched.Thus, which extra metal film 101 is all removed.
Present embodiment from the description above is being contacted with substrate 100 with making the lobe portion of noble metal film 11
It is etched using the liquid 200 of alkalinity in the state of metal film 101.Therefore, the metal film contacted with noble metal film 11
101 are removed by galvanic corrosion with higher etching speed, on the other hand, the insulating film 102a not contacted with noble metal film 11
And conductive film 102b is not removed.As a result, can not wounded substrate 100 pattern and improve the etching speed of metal film 101.Especially
Its, in the present embodiment, even if the metal film 101 of etch target and the conductive film 102b of protected object contain same metal
(being tungsten in present embodiment), also optionally only etches metal film 101.
In addition, in the present embodiment, porous part is being used containing precious metal components 10, thus also can liquid 200 ooze
Enter to the porous part.As long as example, directly supplying liquid 200 to the porous part from liquid supply nozzle 20, so that it may
Liquid 200 is set to penetrate into.In this case, new (unreacted) liquid 200 is supplied always to noble metal film 11 and metal film 101
Contact portion, therefore can more effectively remove metal film 101.In addition, liquid 200 is directly fed to contain precious metal components
In the case of 10, in order not to interfere liquid 200 from the transmission of the male and fomale(M＆F) containing precious metal components 10, the preferred not shape of noble metal film 11
At the whole surface in male and fomale(M＆F), but partially it is formed in male and fomale(M＆F).But it is Porous portion in noble metal film 11 itself
In the case of part, even if not forming male and fomale(M＆F) containing precious metal components 10, liquid 200 also can pass through noble metal film 11.
In addition, in present embodiment, in order to be easy to supply liquid to the surface of metal film 101, without making that there are bumps
The recess portion containing precious metal components 10 on surface is contacted with metal film, in metal film 101 and containing being set between 10 surface of precious metal components
It is equipped with space.However, the surface containing precious metal components 10 is not necessarily bumps.As long as liquid 200 can be supplied to metal film
101, even if make the precious metal surface for having flat is contacted with metal film 101 containing precious metal components 10, still it can be expected that adequately
Etch effect.As long as such as the substrate board treatment 1 using Fig. 1, liquid 200 is directly fed to the metal of substrate 100 on one side
Between the pattern of film 101, substrate is made to rotate and metal film 101 is made to be contacted with 11 table of noble metal film containing precious metal components 10 on one side
Metal film 101 can then be etched and be removed by face.
In addition, in present embodiment, make the pattern for the metal film 101 being contacted with containing precious metal components 10 on substrate 100, but
Also it can contact in other metal surfaces, such as the metal film in the inclined plane part of the substrate 100 of wafer-like be set.In this case, can
Metal film stripping in the inclined plane part of substrate 100 will be set.
(the 2nd embodiment)
Fig. 4 is the schematic diagram of the substrate board treatment for indicating the 2nd embodiment schematically constituted.Substrate shown in Fig. 4
Processing unit 2 have containing precious metal components 10, treatment trough 40 (liquid supply part), holding member 50 (the 1st holding member) and
Holding member 51 (the 2nd holding member).In addition, as the construction containing precious metal components 10 and substrate 100, with the 1st embodiment
It is identical, therefore detailed description will be omitted.
The bottom for the treatment of trough 40 is provided with supply mouth 41.Treatment trough 40 stores the liquid of the alkalinity supplied from supply mouth 41
200.It is impregnated in the liquid 200 containing precious metal components 10 and substrate 100.
Holding member 50 keeps extremely transporting until treatment trough 40 to containing precious metal components 10.Holding member 50 for example connects
It ties in the transport mechanism containing precious metal components 10, or is configured to a part for the transport mechanism.
Holding member 51 keeps extremely transporting until treatment trough 40 to substrate 100.Holding member 51 is for example linked to base
The transport mechanism of plate 100, or it is configured to a part for the transport mechanism.
Hereinafter, using Fig. 5 to using the substrate processing method using same of the substrate board treatment 2 of present embodiment to illustrate.This
Place, it is also identical as the 1st embodiment, the etching step of substrate 100 is illustrated.Fig. 5 is to the base to the 2nd embodiment
The schematic diagram that the etching step of plate 100 illustrates.
First, precious metal components 10 will be contained using holding member 50 to transport to treatment trough 40, and use holding member 51
Substrate 100 is transported to treatment trough 40.In treatment trough 40, make to contact with substrate 100 containing precious metal components 10.Specifically,
The noble metal film 11 containing precious metal components 10 is set partially to be contacted with the metal film 101 of substrate 100.At this point, in order to avoid base
The damage of the laminate 102 of plate 100, metal film 101 and the pressure of the contact portion of noble metal film 11 are preferably small as possible.
Secondly, the liquid 200 of alkalinity is supplied from supply mouth 41 to treatment trough 40.When liquid 200 is stored in treatment trough
When in 40, as shown in figure 4, being impregnated in liquid 200 containing precious metal components 10 and substrate 100.The liquid 200 enters to noble metal film
11 in the gap of metal film 101.Therefore, identical as the 1st embodiment, galvanic corrosion is generated, to promote metal film 101
Etching.Thereafter, moved out from treatment trough 40 containing precious metal components 10 and substrate 100, from this containing the different substrate of precious metal components 10
100 move in treatment trough 40.
Present embodiment from the description above, identical as the 1st embodiment, metal film 101 is eclipsed by galvanic corrosion
It carves, thus can avoid the damage of the pattern of substrate 100 on one side, on one side be removed metal film 101 with higher etching speed.
In addition, in present embodiment, metal film 101 is once removed in treatment trough 40.Therefore, with the 1st embodiment
It compares, etch processes time can be shortened.
(the 3rd embodiment)
Fig. 6 is the schematic diagram of the substrate board treatment for indicating the 3rd embodiment schematically constituted.Substrate shown in fig. 6
Processing unit 3 has containing precious metal components 10, liquid supply nozzle 20 and driving mechanism 60.In addition, as liquid supply nozzle
20 and substrate 100 construction, it is identical as the 1st embodiment, therefore detailed description will be omitted.
Shape containing precious metal components 10 is to keep the belt shape of multi-piece substrate 100.It is formed with noble metal on the surface of band
Film 11 (not shown in Fig. 6).Noble metal film 11 also can be on the soft-member such as being deposited on silicon rubber, or portion containing noble metal
Part 10 itself is formed as the band of relatively thin noble metal film 11.
Driving mechanism 60, which is mounted on, contains precious metal components 10.It is rotated by driving mechanism 60, containing precious metal components 10 in medicine
X is moved towards a direction for the lower section of liquid supply nozzle 20.That is, driving mechanism 60 transports multi-piece substrate 100 in a manner of band conveyer.
Hereinafter, to using the substrate processing method using same of the substrate board treatment 3 of present embodiment to illustrate.Herein, with the 1st
Embodiment is identical, is illustrated to the etching step of substrate 100.
First, substrate 100 is inverted and is placed in containing on precious metal components 10.Therefore, as shown in fig. 7, the gold of substrate 100
Belong to film 101 and is contacted with the noble metal film 11 containing precious metal components 10.Then, the driving of driving mechanism 60 is removed containing precious metal components 10
Send substrate 100.When substrate 100 is to the underface for reaching liquid supply nozzle 20, liquid supply nozzle 20 sprays liquid 200.
The liquid 200 of ejection is spread from substrate 100 to noble metal film 11.At this point, liquid 200 also enters to metal film 101
With the gap of noble metal film 11.Therefore, identical as above-mentioned other embodiment, galvanic corrosion is generated, to promote metal film 101
Etching.
Thereafter, when the driving of driving mechanism 60 is containing precious metal components 10, next substrate 100 is to reaching liquid supply nozzle 20
Underface, the metal film 101 being arranged in the substrate 100 is removed in the same manner.It is positioned in containing expensive thus, be separately positioned on
The metal film 101 of multiple substrates 100 of metal parts 10 is continuously removed.
In present embodiment described above, metal film 101 is etched also by galvanic corrosion, thus can avoid base on one side
The damage of the pattern of plate 100 is on one side removed metal film 101 with higher etching speed.
In addition, in present embodiment, continuity multiple substrates 100 can be etched.Therefore, device can be improved
Running rate.
(the 4th embodiment)
Fig. 8 is the schematic diagram of the substrate board treatment for indicating the 4th embodiment schematically constituted.In addition, Fig. 9 is will to scheme
The enlarged drawing of the major part amplification of substrate board treatment 4 shown in 8.
As can be seen from figures 8 and 9, the substrate board treatment 4 of present embodiment has containing precious metal components 10, liquid supply spray
Mouth 20, holding member 70 (the 1st holding member) and holding member 71 (the 2nd holding member).In addition, as liquid supply nozzle
20 and substrate 100 construction, it is identical as the 1st embodiment, therefore detailed description will be omitted.
Be formed as keeping the disk-shaped of multiple substrates 100 containing precious metal components 10.Upper surface containing precious metal components 10 is
Male and fomale(M＆F).In the male and fomale(M＆F), it is provided with noble metal film 11 as shown in Figure 9.In addition, can also implement with the 3rd containing precious metal components 10
Mode same deposition itself is formed as relatively thin plectane on the soft-members such as silicon rubber, or containing precious metal components 10.
Holding member 70 revolvably keeps containing precious metal components 10.Holding member 70 is for example linked to rotating mechanism, or
It is configured to a part for the rotating mechanism.
Holding member 71 can rotatably keep multiple substrates 100 with containing precious metal components 10 simultaneously to the same direction.
Holding member 71 is for example linked to rotating mechanism identical with holding member 70, or is configured to a part for the rotating mechanism.
Hereinafter, to using the substrate processing method using same of the substrate board treatment 4 of present embodiment to illustrate.Herein, also with
1st embodiment is identical, is illustrated to the etching step of substrate 100.
First, the multiple substrates 100 for being held in holding member 71 are placed in containing on precious metal components 10.At this point, with
Each substrate 100 is inverted and is held in holding member 71 by the mode that metal film 101 is contacted with noble metal film 11.
Then, make to rotate containing precious metal components 10 using holding member 70.Simultaneously with the rotation containing precious metal components 10,
Substrate 100 is also rotated to the same direction.Therefore, almost do not apply shear stress between precious metal components 10 and substrate 100 to containing.
Secondly, liquid supply nozzle 20 sprays the liquid 200 of alkalinity to the center containing precious metal components 10.The medicine of ejection
Liquid 200 is spread by the centrifugal force generated from the rotation containing precious metal components 10 to the periphery containing precious metal components 10.At this point,
Liquid 200 also enters to the gap of metal film 101 and noble metal film 11.Therefore, identical as above-mentioned other embodiment, generate electricity
Thermogalvanic corrision, to promote the etching of metal film 101.
In present embodiment described above, etching speed is improved by so that metal film 101 is contacted with noble metal film 11.
In addition, in present embodiment, substrate 100 is rotated with containing precious metal components 10 simultaneously to the same direction, therefore between them
Almost do not apply shear stress.It can avoid the damage of the pattern of substrate 100 as a result,.
(the 5th embodiment)
Figure 10 (a) is the schematic diagram of the substrate board treatment for indicating the 5th embodiment schematically constituted.Such as Figure 10 (a)
Shown, the substrate board treatment 5 of present embodiment has liquid 200 directly to the logical nozzle for liquid supplied containing precious metal components 10
80 (liquid supply parts).
Figure 10 (b) is the sectional view of the cutting line A-A shown in Figure 10 (a).As shown in Figure 10 (b), present embodiment
There are multiple liquid-passing holes 105 containing precious metal components 10.Each liquid-passing hole 105 is connected to logical nozzle for liquid 80.
Figure 11 (a) is the enlarged drawing containing precious metal components 10.As shown in Figure 11 (a), contain noble metal in present embodiment
The bottom surface of component 10 is provided with soft multiple hairy components 12 of the banding in a manner of brush.These hairy components 12 are constituted
Concaveconvex shape part containing precious metal components 10.
Figure 11 (b) is the enlarged drawing of hairy component 12.As shown in Figure 11 (b), in hairy component 12,121 structure of insulator
At core.The insulator 121 is covered by noble metal film 122.Insulator 121 includes such as polypropylene, and noble metal film 122 includes example
Such as platinum.Noble metal film 122 also can partially cover insulator 121, and it is all can also to cover insulator 121.In addition, insulator
121 can also be covered by the nano-particle of noble metal.
In substrate board treatment 5, when logical nozzle for liquid 80 by liquid 200 to when being supplied containing precious metal components 10, the liquid 200
By liquid-passing hole 105 along the side flow of hairy component 12.For example added as by metal film 101 (with reference to Fig. 3) as a result,
When work object etches, as shown in Figure 11 (b), hairy component 12 and the contact site (etching position) of metal film 101 are full of liquid
200。
When metal film 101 and hairy component 12 contact, metal film 101 becomes the anode region of high potential, hairy component
12 become the cathode zone of low potential.Galvanic corrosion is generated by the potential difference.At this point, corrosion current IcorrIt can be based on following
Formula (1) calculate.
Icorr=(Ecathode-Eanode/(Relectrolyte+Ranode+Rcathode+Ra/e+Rc/e)(1)
In formula (1), electromotive force EanodeAnd resistance RanodeThe electromotive force and resistance of anode region are indicated respectively.Electromotive force
EcathodeAnd resistance RcathodeThe electromotive force and resistance of cathode zone are indicated respectively.Resistance RelectrolyteIndicate the electricity of liquid 200
Resistance.Contact resistance Ra/eIndicate the contact resistance of anode region and liquid 200, that is, the electricity of the contact with liquid 200 of metal film 101
Resistance.Contact resistance Rc/eIndicate the contact resistance of cathode zone and liquid 200, that is, the electricity of the contact with liquid 200 of hairy component 12
Resistance.
In present embodiment, the front end of hairy component 12 is bent in etching, therefore metal film 101 and noble metal film
122 contact area becomes larger.Therefore, the contact resistance R of anode region and cathode zonea/cBecome smaller.It can efficiently carry as a result,
High etching speed.
In addition, in present embodiment, liquid 200 is for example alternatively the higher strong basicity liquid of electric conductivity.In this case, resistance
Relectrolyte, contact resistance Ra/eAnd contact resistance Rc/eBecome smaller.Therefore, according to the formula (1), corrosion current IcorrIncrease, because
This can improve etching speed.
(the 6th embodiment)
Figure 12 (a) is the schematic diagram of the substrate board treatment 6 for indicating the 6th embodiment schematically constituted.Such as Figure 12 (a)
Shown, the substrate board treatment 6 of present embodiment has the 1st 10a containing precious metal components and the 2nd 10b containing precious metal components carrys out generation
It is different from the substrate board treatment 1 of the 1st embodiment for the aspect containing precious metal components 10.
Figure 12 (b) is the enlarged drawing of the 1st 10a containing precious metal components.As shown in Figure 12 (b), contain precious metal components the 1st
The bottom surface of 10a is provided with soft multiple hairy components 13 of the banding in a manner of brush.These hairy components 13 constitute the 1st
The concaveconvex shape part of the 10a containing precious metal components.The hairy portion illustrated in the surface of hairy component 13, with the 5th embodiment
Part 12 has been identically formed noble metal film.
Figure 12 (c) is the enlarged drawing of the 2nd 10b containing precious metal components.As shown in Figure 12 (c), contain precious metal components the 2nd
The bottom surface of 10b is provided with the sponge 14 with concaveconvex shape.It is also formed with noble metal film on the surface of sponge 14.Sponge 14 it is convex
Spacing p2 (the 2nd spacing) between portion is less than the spacing p1 (the 1st spacing) between the front end of hairy component 13.In addition, the 1st contains noble metal
The construction of component 10a and the 2nd 1Ob containing precious metal components are not limited to the construction.
Figure 13 (a) is the enlarged drawing for the change case for indicating the 1st 10a containing precious metal components.As shown in Figure 13 (a), the 1st containing expensive
Metal parts 10a also can be identical containing precious metal components 10 as such as the 1st embodiment, has by the 1st noble metal film 11a coverings
Concaveconvex shape.
Figure 13 (b) is the enlarged drawing for the change case for indicating the 2nd 10b containing precious metal components.As shown in Figure 13 (b), contain the 2nd
Precious metal components 10b also can be formed with the 2nd noble metal film 11b on the surface of the 1st noble metal film 11a.2nd noble metal film 11b's
Spacing p2 (the 2nd spacing) is less than the spacing p1 (the 1st spacing) of the 1st noble metal film 11a.
Hereinafter, to using the manufacturing method of the semiconductor device of the substrate board treatment 6 of present embodiment to illustrate.Base
The removing for the metal film 101 that plate processing unit 6 is used to for example be formed on laminate 102 shown in Fig. 3.
First, by making the 1st 10a containing precious metal components decline with holding member 30, and hairy component 12 or the 1st your gold made
Belong to the metal film 101 that film 11a is contacted with substrate 100.
Secondly, liquid supply nozzle 20 sprays liquid 200.As a result, liquid 200 enter to hairy component 12 gap or
The recess portion of noble metal film 11a and supply to metal film 101.Galvanic corrosion is generated as a result, to promote the etching of metal film 101.
Then, the 1st 10a containing precious metal components is made to increase using holding member 30, and (the 3rd keeps using holding member 32
Component) so that the 2nd 10b containing precious metal components is declined.It thereafter, will be golden by supplying liquid 200 from liquid supply nozzle 20 again
Belong to film 101 to etch.At this point, the spacing p2 due to the 2nd 10b containing precious metal components is less than the spacing of the 1st 10a containing precious metal components
P1, therefore surface area is larger.Therefore, the contact area with metal film 101 becomes larger.It as a result, can be by the 1st 10a containing precious metal components
Etching when remaining metal film 101 remove.
In addition, combination the 1st 10a containing precious metal components and the 2nd 10b containing precious metal components can also be applied to machined object
Purposes other than the purpose that residue removes.In addition, in addition to the method described above, the 1st 10a containing precious metal components and the 2nd can also be used
The alternating etch of 10b containing precious metal components.
Substrate board treatment 6 according to the present embodiment can more be cut by having spacing different bys containing precious metal components
Metal film is etched on the spot.
(the 7th embodiment)
Figure 14 is the schematic diagram of the substrate board treatment for indicating the 7th embodiment schematically constituted.As shown in figure 14, originally
The substrate board treatment 7 of embodiment is also equipped with cooling in addition to the inscape of the substrate board treatment 1 of the 1st embodiment
Mechanism 90.Cooling body 90 is arranged in the end of such as liquid supply nozzle 20, is cooled down to liquid 200.Cooling body 90
Liquid 200 is cooled down using such as cooling gas.
Figure 15 (a) indicates that the state before the etching process of the substrate 100 of present embodiment, Figure 15 (b) indicate this embodiment party
State after the etching process of the substrate 100 of formula.In present embodiment, film 103 is provided on substrate 100, and in the film
Metal film 101 is provided on 103.Film 103 can be metal film or insulating film.
Using being etched to metal film 101 containing precious metal components 10, when the liquid using high temperature and high concentration
Etching speed increases when 200.When etching speed is beyond necessarily increasing, there are not only metal film 101, a part for film 103
The misgivings being etched.
As a result, in present embodiment, liquid 200 is cooled down by using cooling body 90, can avoid over etching.By
This, can improve the etching precision of metal film 101.
In addition, in order to avoid the over etching, liquid 200 can also be diluted.In this case, the concentration drop of liquid 200
It is low, it thus can avoid the etching of film 103.The etching precision of metal film 101 can be improved as a result,.
In addition, cooling body 90 may also be arranged on the lower part of substrate 100.In this case, substrate 100 becomes low-temperature condition,
Liquid 200 can be cooled down via substrate 100 when metal film 101 etches.
In turn, in present embodiment, also surface protectant 104 can be added on the surface of film 103.As surface protectant
104, such as preservative or envelope forming agent can be used.It is preservative in surface protectant 104, and the feelings that film 103 is metal film
Under condition, the corrosion of film 103 can inhibit.On the other hand, it is envelope forming agent in surface protectant 104, and film 103 is insulating film
In the case of, it can inhibit the dissolving of film 103.
(the 8th embodiment)
Figure 16 is provided in the enlarged drawing of the hairy component 15 containing precious metal components 10 of the 8th embodiment.This embodiment party
In formula, hairy component 15 is to replace being set containing the hairy component 12 of precious metal components 10 for the 5th embodiment shown in Figure 11 (a)
It sets.
In hairy component 15, electric conductor 151 is covered by metal film 153, and metal film 153 is covered by noble metal film 152.It leads
Electric body 151 includes such as conductive carbon, and noble metal film 152 includes such as platinum.Metal film 153 includes that resistivity is such compared with such as copper
The small metal of noble metal.
The core of present embodiment from the description above, hairy component 15 is made of electric conductor 151.Therefore, cathodic region
The resistance R in domaincathodeLess than the hairy component 12 of the 5th embodiment.Corrosion current I as a result,corrIncrease, thus, it is possible to improve etching
Speed.
In turn, in present embodiment, between electric conductor 151 and noble metal film 152, resistivity is formed with compared with noble metal film
152 small metal films 153.It therefore, can be by the resistance RcathodeIt further decreases, as a result, etching can be improved further
Speed.
(the 9th embodiment)
Figure 17 (a) is the figure schematically constituted containing precious metal components 10 for indicating the 9th embodiment.Present embodiment
In, including the carrier 16 of the electric conductivity of noble metal is arranged in the bottom surface containing precious metal components 10, and replace shown in Figure 11 (a) the
The hairy component 15 of 5 embodiments.Carrier 16 is made of the porous material such as ion exchange resin.Include such as platinum in carrier 16
Equal nano-particles.
In present embodiment, when logical nozzle for liquid 80 by liquid 200 to when being supplied containing precious metal components 10, the liquid 200 is logical
It crosses and is formed in the liquid-passing hole 105 containing precious metal components 10.Thereafter, liquid 200 flows out to carrier 16 by the inside of carrier 16
With the contact site of machined object.Thereafter, the noble metal included in the carrier 16 and liquid 200 bys, lose machined object
It carves.
Present embodiment from the description above can be ensured the logical fluidity of liquid 200 by carrier 16, passed through on one side on one side
Noble metal included in carrier 16 and promote to etch.
In addition, in present embodiment, also hairy can will be processed as the carrier 16a as shown in such as Figure 17 (b) of carrier 16.
Or, also comb-shaped can will be processed as the carrier 16b as shown in such as Figure 17 (b) of carrier 16.In this case, the stream of liquid 200
Road expands, therefore logical fluidity of the liquid 200 to etching position can be improved.
(the 10th embodiment)
Figure 18 (a) is the figure schematically constituted containing precious metal components 10 for indicating the 10th embodiment.Present embodiment
In, including the reticulate body 17 of noble metal is arranged in the bottom surface containing precious metal components 10, and replace the 5th implementation shown in Figure 11 (a)
The hairy component 15 of mode.
Figure 18 (b) is the enlarged drawing of reticulate body 17.In reticulate body 17, the conductive carbon 171 of rope form is processed as netted.It is leading
Electrical carbon 171 is attached with the nano-particle 172 of noble metal.
In present embodiment, when logical nozzle for liquid 80 by liquid 200 to when being supplied containing precious metal components 10, the liquid 200 is logical
It crosses and is formed in the liquid-passing hole 105 containing precious metal components 10.Thereafter, liquid 200 is flowed out to netted by the gap of reticulate body 17
The contact site of body 17 and machined object.Thereafter, pass through the nano-particle 172 and liquid of noble metal included in reticulate body 17
200 and machined object is etched.
Present embodiment from the description above can be ensured the logical fluidity of liquid 200 by reticulate body 17, led on one side on one side
It crosses nano-particle 172 included in reticulate body 17 and promotes etching.
(the 11st embodiment)
Figure 19 is by the enlarged drawing of the part amplification of the bottom surface containing precious metal components of the 11st embodiment.Such as Figure 19 institutes
Show, intermediate member 18 is formed in the protrusion of noble metal film 11.Intermediate member 18 considers the metal of such as electric conductivity, carbon containing sole body
Or compound or polymer etc..Intermediate member 18 is electric conductor, thereby, it is ensured that metal film 101 and the point containing precious metal components 10
Connection.That is, forming the open circuit potential of metal film 101.More preferably, intermediate member 18 is carbon containing sole body or compound.Pass through
Including carbon and improve reduction potential, to which corrosion rate, i.e. etching speed can be improved.
In present embodiment, even if during supplying liquid 200, noble metal film 11 is not in direct contact with metal film 101,
Also metal film 101 can be etched via intermediate member 18.
In turn, in present embodiment, since noble metal film 11 is not in direct contact with the metal film 101 as machined object,
Therefore falling off caused by the abrasion of the noble metal by constituting noble metal film 11 can be prevented.By preventing noble metal from falling off, can also prevent
The only pollution of the machined object caused by noble metal.
In addition, in Figure 19, the protrusion containing precious metal components 10 shown in the 1st embodiment is arranged with intermediate member 18
Mode indicate, but be not limited to the 1st embodiment, may also be arranged on shown in such as the 5th embodiment and the 8th embodiment
Hairy component 12,15 the contact portion with metal film 101.In addition, it is not limited to protrusion, it also can be containing precious metal components
10 recess portion forms intermediate member 18.
In the case of intermediate member 18 of the application present embodiment of the hairy component 12,15, in order to improve corrosion
Speed, it is also considered that reduce the resistance of liquid 200.Or, also contemplating for reducing the resistance of intermediate member 18.
In order to reduce the resistance of liquid 200, also salt can be added in such as liquid 200, can also shortened as cathode zone
Hairy component 12,15 is at a distance from as the metal film 101 of anode region.In order to reduce the resistance of intermediate member 18, can also make
The volume of intermediate member 18 becomes larger.In addition, intermediate member 18 or membranaceous, or by the material stacking of threadiness it is multiple and
At mesh-like.
For example, as shown in Figure 20 (a), consideration is arranged between the hairy component 12,15 and machined membrane metal film 101
The intermediate member 18 of mesh-like.In addition, as other change case, it also can be as shown in Figure 20 (b), by noble metals such as platinum particles
It is set as containing precious metal components 10, the intermediate member 18 of mesh-like is set in a manner of surrounding the noble metal.In this case, by
There is logical fluidity in the intermediate member 18 of mesh-like, therefore have the effect of present embodiment, and metal film 101 can be lost
It carves.It, also can be partial in the bottom surface (lower end) containing precious metal components 10 of plate as shown in Figure 20 (c) as other change case
Intermediate member 18 is arranged in ground.In this case, metal film 101 can be lost when making intermediate member 18 be contacted with metal film 101
It carves.
(the 12nd embodiment)
Figure 21 is by the enlarged drawing of the part amplification of the bottom surface containing precious metal components of the 12nd embodiment.Such as Figure 21 institutes
Show, present embodiment is made of containing precious metal components 10 multiple grid laminates 19.Multiple grid laminates 19 are mutually just
2 directions (x-direction and y-direction) interval arrangement handed over.It is provided with inner space between grid laminate 19.The inner space
Flow path as liquid 200 functions.
Figure 22 is the exploded perspective view of grid laminate 19.In grid laminate 19, lamination have multiple checker 19a~
19c.In addition, the lamination number qualifying subnumber of checker and not particularly restricted.Your gold checker 19a~19c will can in advance be carried with
The filament of category forms clathrate and is formed.Or, also can be by the way that after filament is formed clathrate, your gold be held in the checker
Belong to and is formed.Thereafter, grid laminate 19 is formed by these checkers of lamination.
Figure 23 indicates the state in present embodiment etching process.As shown in figure 23, by each checker 19a of lamination~
Grid laminate 19 made of 19c and the contact area for increasing noble metal and metal film 101.In addition, by each checker 19a~
The scale of 19c and the logical fluidity for ensuring liquid 200.The etching speed of metal film 101 can be improved as a result,.
Several embodiments of the invention are described, but these embodiments are proposed as example, are not anticipated
Figure limits the range of invention.These embodiments can be implemented in various other forms, and can be in the range for not departing from inventive concept
Carry out various omissions, substitutions and changes.These embodiments or its variation are identical as the range or purport for being contained in invention, including
In invention as described in the claims and its range of equalization.
[explanation of symbol]
10 contain precious metal components
10a the 1st contains precious metal components
10b the 2nd contains precious metal components
12,13,15 hairy component
16 carriers
17 reticulate bodies
18 intermediate members
19 grid laminates
19a~19c checkers
20 liquid supply nozzles (liquid supply part)
30,50,70 the 1st holding member
31,51,71 the 2nd holding member
40 treatment troughs (liquid supply part)
60 driving mechanisms
80 logical nozzle for liquid (liquid supply part)
90 cooling bodies
105 liquid-passing holes
151 electric conductors
152 noble metal films
153 metal films
Claims (20)
1. a kind of substrate board treatment, it is characterised in that have：
Containing precious metal components, there is the concaveconvex shape part comprising noble metal or Porous shape；And
Liquid supply part supplies liquid；And
The protrusion or the Porous shape for making the concaveconvex shape part on one side are contacted with special metal surface, on one side will
The liquid supplies to the metal surface and removes the metal etch.
2. substrate board treatment according to claim 1, it is characterised in that：
The concaveconvex shape part is the male and fomale(M＆F) for having porous material on surface.
3. substrate board treatment according to claim 1 or 2, it is characterised in that and then have：
1st holding member can keep described and contain precious metal components up and down；And the 2nd holding member, revolvably keep the spy
Deposit metal surface.
4. substrate board treatment according to claim 1 or 2, it is characterised in that：
The noble metal includes at least either of platinum (Pt), golden (Au), silver-colored (Ag) and palladium (Pd).
5. substrate board treatment according to claim 1 or 2, it is characterised in that：
It is described that there are the multiple liquid-passing holes being connected to the liquid supply part containing precious metal components.
6. substrate board treatment according to claim 1 or 2, it is characterised in that：
It is described to have the 1st spacing containing precious metal components and protrusion the more described 1st small containing precious metal components containing precious metal components
2nd contains precious metal components.
7. substrate board treatment according to claim 1 or 2, it is characterised in that and then have and the liquid is cooled down
Cooling body.
8. substrate board treatment according to claim 5, it is characterised in that：
It is described more with the metal etch is removed together with the liquid by the multiple liquid-passing hole containing precious metal components
A hairy component, each hairy component have：Electric conductor；Noble metal film, including the noble metal；And metal film, it is arranged described
Between electric conductor and the noble metal film, resistivity is small compared with the noble metal.
9. substrate board treatment according to claim 5, it is characterised in that：
The carrier or reticulate body containing precious metal components with the nano-particle comprising the noble metal.
10. substrate board treatment according to claim 1, it is characterised in that：
The protrusion is provided with electric conductivity carbon film.
11. substrate board treatment according to claim 1, it is characterised in that：
It is described containing precious metal components have will include the noble metal multiple grid volume layers made of grid laminate.
12. a kind of substrate processing method using same, it is characterised in that：
Metal film is formed on substrate,
By so that noble metal contacts by the state of the metal film supplies liquid to the metal film by the metal film
Etching removes.
13. substrate processing method using same according to claim 12, it is characterised in that：
Expose the patterned surfaces by removing by etching the metal film.
14. substrate processing method using same according to claim 12 or 13, it is characterised in that：
The liquid is alkalinity.
15. substrate processing method using same according to claim 12 or 13, it is characterised in that：
The noble metal has concavo-convex surface, so that the convex-concave surface is contacted with the state of the metal film by the medicine
Liquid is supplied to the metal film.
16. substrate processing method using same according to claim 12 or 13, it is characterised in that：
The noble metal is Porous shape, and so that the Porous shape noble metal contacts in the metal film state by institute
Liquid is stated to supply to the metal film.
17. substrate processing method using same according to claim 12 or 13, it is characterised in that：
After being etched to the metal film containing precious metal components using the 1st comprising the noble metal, the spacing of protrusion is utilized
More described 1st the 2nd etches the metal film containing precious metal components containing precious metal components are small.
18. substrate processing method using same according to claim 12 or 13, it is characterised in that：
Liquid cooling etches the metal film.
19. substrate processing method using same according to claim 12 or 13, it is characterised in that：
The hairy component contact comprising the noble metal is set to be etched in face of the metal film in the metal film, one on one side.
20. substrate processing method using same according to claim 12 or 13, it is characterised in that：
The carrier of the nano-particle comprising the noble metal or reticulate body is set to be contacted with the metal film on one side, one faces the gold
Belong to film etching.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017053310 | 2017-03-17 | ||
| JP2017-053310 | 2017-03-17 | ||
| JP2017-185305 | 2017-09-26 | ||
| JP2017185305 | 2017-09-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108630575A true CN108630575A (en) | 2018-10-09 |
| CN108630575B CN108630575B (en) | 2022-08-09 |
Family
ID=63706096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810186810.9A Active CN108630575B (en) | 2017-03-17 | 2018-03-07 | Substrate processing apparatus and substrate processing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7020966B2 (en) |
| CN (1) | CN108630575B (en) |
| TW (1) | TWI671436B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020047617A (en) | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | Substrate processing device, method of manufacturing semiconductor device, and processed substrate |
| JP7453874B2 (en) | 2020-07-30 | 2024-03-21 | 芝浦メカトロニクス株式会社 | Substrate processing method and substrate processing apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060219662A1 (en) * | 2005-03-30 | 2006-10-05 | Fujitsu Limited | Fabrication process of semiconductor device and polishing method |
| CN101159230A (en) * | 2006-10-03 | 2008-04-09 | 松下电器产业株式会社 | Substrate processing apparatus and substrate processing method |
| US20090107851A1 (en) * | 2007-10-10 | 2009-04-30 | Akira Kodera | Electrolytic polishing method of substrate |
| TW201639022A (en) * | 2009-12-15 | 2016-11-01 | 國立大學法人大阪大學 | Polishing apparatus and polishing tool |
| CN106256016A (en) * | 2014-04-18 | 2016-12-21 | 株式会社荏原制作所 | Substrate board treatment, base plate processing system and substrate processing method using same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08162425A (en) * | 1994-12-06 | 1996-06-21 | Mitsubishi Electric Corp | Manufacture and manufacturing method of semiconductor integrated circuit device |
| JP3737787B2 (en) | 2002-07-16 | 2006-01-25 | 株式会社東芝 | Manufacturing method of semiconductor device |
| JP2004319609A (en) | 2003-04-14 | 2004-11-11 | Fujitsu Ltd | Method of forming wiring and polishing pad |
| JP5364959B2 (en) * | 2009-03-27 | 2013-12-11 | 国立大学法人大阪大学 | Polishing method and polishing apparatus |
| JP2015128161A (en) | 2014-12-25 | 2015-07-09 | 国立大学法人大阪大学 | Polishing method |
| JP6328575B2 (en) | 2015-02-23 | 2018-05-23 | 東京エレクトロン株式会社 | Catalyst layer forming method, catalyst layer forming system, and storage medium |
-
2018
- 2018-03-07 TW TW107107560A patent/TWI671436B/en active
- 2018-03-07 CN CN201810186810.9A patent/CN108630575B/en active Active
- 2018-03-09 JP JP2018043388A patent/JP7020966B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060219662A1 (en) * | 2005-03-30 | 2006-10-05 | Fujitsu Limited | Fabrication process of semiconductor device and polishing method |
| CN101159230A (en) * | 2006-10-03 | 2008-04-09 | 松下电器产业株式会社 | Substrate processing apparatus and substrate processing method |
| US20090107851A1 (en) * | 2007-10-10 | 2009-04-30 | Akira Kodera | Electrolytic polishing method of substrate |
| TW201639022A (en) * | 2009-12-15 | 2016-11-01 | 國立大學法人大阪大學 | Polishing apparatus and polishing tool |
| CN106256016A (en) * | 2014-04-18 | 2016-12-21 | 株式会社荏原制作所 | Substrate board treatment, base plate processing system and substrate processing method using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019054227A (en) | 2019-04-04 |
| JP7020966B2 (en) | 2022-02-16 |
| CN108630575B (en) | 2022-08-09 |
| TWI671436B (en) | 2019-09-11 |
| TW201842239A (en) | 2018-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101295478B1 (en) | Electroplating method for coating a substrate surface with a metal | |
| PH12015500543B1 (en) | Method for metallization of solar cell substrates | |
| US9826634B2 (en) | Fabricating a conductive trace structure and substrate having the structure | |
| CN100414682C (en) | Film forming method, electronic device and electronic apparatus | |
| CN101743639B (en) | Contact structure for a semiconductor component and a method for production thereof | |
| US20070071888A1 (en) | Method and apparatus for forming device features in an integrated electroless deposition system | |
| US9593431B2 (en) | Electroplating systems | |
| CN106409781A (en) | Semiconductor device and method for manufacturing semiconductor device | |
| CN102089833A (en) | Microstructure, and method for production thereof | |
| TW200529328A (en) | Electroplating apparatus | |
| CN108630575A (en) | Substrate board treatment and substrate processing method using same | |
| US6319834B1 (en) | Method and apparatus for improved planarity metallization by electroplating and CMP | |
| US11784064B2 (en) | Substrate treatment apparatus and manufacturing method of semiconductor device | |
| US6291332B1 (en) | Electroless plated semiconductor vias and channels | |
| US9363900B2 (en) | Mounting device and method of manufacturing the same | |
| TWI359214B (en) | Electroplating method | |
| JP4498652B2 (en) | Electroless plating method | |
| JP4797368B2 (en) | Manufacturing method of semiconductor device | |
| JP2006120870A5 (en) | ||
| JPH04356937A (en) | Composition and coating for preventing current induction electrochemical dendrite between conductor on dielectric substrate | |
| CN103998650A (en) | Laminate, method for producing same and base layer forming composition | |
| TWI221862B (en) | Apparatus and method for plating a substrate, and method and apparatus for electrolytic treatment | |
| JP2004218011A (en) | Electrolytic plating apparatus | |
| US10179950B2 (en) | Plating method, plated component, and plating system | |
| JP2007250915A (en) | Substrate treatment method and substrate treatment apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Tokyo Applicant after: Kaixia Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. Address after: Tokyo Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo Applicant before: Pangea Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220210 Address after: Tokyo Applicant after: Pangea Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |