CN108624867A - Improve the method for the atomic layer deposition film thickness uniformity and the cassette for carrying wafer - Google Patents
Improve the method for the atomic layer deposition film thickness uniformity and the cassette for carrying wafer Download PDFInfo
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- CN108624867A CN108624867A CN201810446713.9A CN201810446713A CN108624867A CN 108624867 A CN108624867 A CN 108624867A CN 201810446713 A CN201810446713 A CN 201810446713A CN 108624867 A CN108624867 A CN 108624867A
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- Prior art keywords
- current stabilization
- cassette
- groove
- stabilization part
- clamp plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Abstract
The present invention provides a kind of method, the manufacturing method of capacitor, the cassette for carrying wafer and atomic layer deposition boiler tube improving the atomic layer deposition film thickness uniformity, wherein improve the method for the atomic layer deposition film thickness uniformity, including：Cassette for carrying wafer is provided, including top current stabilization part drawing out type is inserted into the first groove, is stopped with being formed between head cover and wafer；Bottom current stabilization part drawing out type is inserted into the second groove, is stopped with being formed between pedestal and wafer；Multiple wafers are loaded in loading frame, include that each drawing out type in multiple wafers is inserted into third groove；Carry out atom layer deposition process, include that process gas is discharged by the gas syringe of atomic layer deposition boiler tube, it is deposited on multiple wafers via the cassette to form film, top current stabilization part and bottom current stabilization part improve gas of the process gas in the top and bottom of cassette and spread the uniformity.The present invention can improve deposition film thickness uniformity, reduce dust pollution, and promote yield.
Description
Technical field
The present invention relates to semiconductor integrated circuit technology field more particularly to a kind of improvement atomic layer deposition film thickness uniformitys
Method, the manufacturing method of capacitor, the cassette for carrying wafer and atomic layer deposition boiler tube.
Background technology
Compared to general Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor
Deposition, abbreviation LPCVD), atomic layer deposition method (Atomic Layer Deposition, abbreviation ALD) be by substance with
Single atom form membrane in layer be deposited on substrate surface, for have self limiting Chemisorption (self-
Limiting chemisorption), i.e., it redeposited will not be reacted after deposition saturation, without because special gas is excessive and excessively full
And absorption, therefore there is better step coverage rate and film thickness uniformity, and required film thickness can be precisely controlled.
Thin film deposition processes carry out usually in boiler tube, as shown in Figure 1, cassette 100 in boiler tube carry wafer 10A ',
When 10B ' and 10C ' rotations, process gas is sprayed by the gas syringe 21 ' in boiler tube, from wafer 10A ', 10B ' and the sides 10C '
For edge to center diffusional deposition, thickness of the deposition film at 10A ', 10B ' and the edges 10C ' can be thicker than center.Boiler tube processing procedure is due to criticizing
The characteristics of secondary multiple-piece reaction, has stronger load effect, is influenced by load effect, the top and bottom of cassette 100 are passed through
Gas wafer adjacent thereto carries out deposition reaction mostly, cause the crystalline substance of the wafer 10A ' and bottom at 100 top of neighbouring cassette
The edge thickness for the film 11A ' that circle 10B ' is deposited can be than the edges film 11C ' for the wafer 10C ' that 100 middle part of cassette is carried
Thickness is thicker, and film thickness uniformity is caused to be deteriorated, as Fig. 2-1 show wafer 10A ' and the 10B ' institutes of 100 top and bottom of cassette
The thickness schematic diagram of the film 11A ' of deposition, as Fig. 2-2 show the film 11C ' that the wafer 10C ' at 100 middle part of cassette is deposited
Thickness schematic diagram.In addition, since gas is in 100 top and bottom of cassette easily generation flow-disturbing phenomenon A, dust pollution can be caused,
As shown in Figure 1.
When carrying out LPCVD depositions in LPCVD boiler tubes, the temperature at the tops of LPCVD boiler tubes, middle part and bottom can be with subregion
Domain adjusts, and reduces the temperature of top and bottom and can improve film thickness uniformity.But when carrying out ALD deposition in ALD boiler tubes, ALD
The temperature of boiler tube cannot subregion adjustment, also just can not improve film thickness caused by load effect by adjusting temperature in boiler tube
The problem of uniformity difference.With the continuous micro of manufacture of semiconductor line width, the load effect being reflected on film thickness is brighter
It is aobvious, also deepen the degree of difficulty for controlling film thickness and the uniformity.
Invention content
The embodiment of the present invention provide it is a kind of improve the method for the atomic layer deposition film thickness uniformity, the manufacturing method of capacitor,
Cassette for carrying wafer and atomic layer deposition boiler tube are asked with solving or alleviating one or more technologies in the prior art
Topic.
As the first aspect of the embodiment of the present invention, it is equal that the embodiment of the present invention provides a kind of improvement atomic layer deposition film thickness
The method of evenness, including：
Cassette for carrying wafer is provided,
Wherein, the cassette includes loading frame, has the head cover positioned at top, connects vertically positioned at the pedestal of bottom and more
The connecting pole being connected between the periphery of the head cover and the periphery of the pedestal,
The inner wall of the connecting pole offers the first groove, the second groove and multiple third grooves, first groove position
In the top of the connecting pole；Second groove is located at the bottom of the connecting pole；The third groove is located at described first
Between groove and second groove, for being inserted into the wafer；
The cassette further includes top current stabilization part and bottom current stabilization part,
It is inserted into the top current stabilization part drawing out type first groove, with the shape between the head cover and the wafer
At blocking；The bottom current stabilization part drawing out type is inserted into second groove, to be formed between the pedestal and the wafer
Blocking, wherein the head cover, the top current stabilization part, the bottom current stabilization part and the pedestal are arranged in parallel；
Multiple wafers are loaded in the loading frame, include that each drawing out type in the multiple wafer is inserted into institute
State third groove；
Atom layer deposition process is carried out, includes that process gas is discharged by the gas syringe of atomic layer deposition boiler tube, it is described
Process gas is deposited on the multiple wafer to form film, the top current stabilization part and the bottom current stabilization via the cassette
Part improves gas of the process gas in the top and bottom of the cassette and spreads the uniformity.
Further, the top current stabilization part includes top upper clamp plate, top lower clamp plate and is connected on the top
An at least top struts between clamping plate and the top lower clamp plate, wherein pressed from both sides under the top upper clamp plate and the top
Plate is arranged in parallel and the step of progress atom layer deposition process includes：
The process gas circulates between the top upper clamp plate and the top lower clamp plate.
Further, the bottom current stabilization part includes bottom upper clamp plate, bottom lower clamp plate and is connected on the bottom
An at least foundation bilge cod between clamping plate and the bottom lower clamp plate, wherein pressed from both sides under the bottom upper clamp plate and the bottom
Plate is arranged in parallel and the step of progress atom layer deposition process includes：
The process gas circulates between clamping plate and the bottom lower clamp plate on said bottom.
Further, the step of cassette provided for carrying wafer includes：
Offer includes the cassette of multiple first grooves and multiple top current stabilization parts, wherein multiple tops
Current stabilization part is arranged in parallel, and each drawing out type in multiple top current stabilization parts is inserted into first groove；
And
The step of progress atom layer deposition process includes：
The process gas circulates between the two neighboring top current stabilization part.
Further, the step of cassette provided for carrying wafer includes：
Offer includes the cassette of multiple second grooves and multiple bottom current stabilization parts, wherein multiple bottoms
Current stabilization part is arranged in parallel, and each drawing out type in multiple bottom current stabilization parts is inserted into second groove；
And
The step of progress atom layer deposition process includes：
The process gas circulates between the two neighboring bottom current stabilization part.
As the second aspect of the embodiment of the present invention, the embodiment of the present invention also provides a kind of manufacturing method packet of capacitor
It includes：
Lower electrode plate is formed in the top of wafer；
Dielectric layer is formed in the surface of the lower electrode plate in the method for the above-mentioned improvement atomic layer deposition film thickness uniformity；
Electric pole plate is formed in the surface of the dielectric layer；
Conductor structure is formed in the surface of the electric pole plate.
In terms of third as the embodiment of the present invention, the embodiment of the present invention provides a kind of cassette for carrying wafer,
Including：
There is loading frame head cover, the pedestal positioned at bottom and more connecting poles, the connecting pole positioned at top to connect vertically
It is connected between the periphery of the head cover and the periphery of the pedestal；And the inner wall of the connecting pole offers the first groove,
Two grooves and multiple third grooves, first groove are located at the top of the connecting pole；Second groove is located at the company
Connect the bottom of column；The third groove is between first groove and second groove, for being inserted into wafer；
Top current stabilization part, drawing out type are inserted into first groove, are hindered with being formed between the head cover and the wafer
Gear；
Bottom current stabilization part, drawing out type are inserted into second groove, are hindered with being formed between the pedestal and the wafer
Gear,
Wherein, the head cover, the top current stabilization part, the bottom current stabilization part and the pedestal are arranged in parallel.
Further, the top current stabilization part includes：
Top upper clamp plate is located at the top of the top current stabilization part；
Top lower clamp plate is parallel to the top upper clamp plate setting, and positioned at the bottom of the top current stabilization part；And
An at least top struts are connected between the top upper clamp plate and the top lower clamp plate；
Wherein, when the top current stabilization part is inserted into first groove, process gas can in the top upper clamp plate and
It circulates between the top lower clamp plate.
Further, the bottom current stabilization part includes：
Bottom upper clamp plate is located at the top of the bottom current stabilization part；
Bottom lower clamp plate is parallel to the bottom upper clamp plate setting, and positioned at the bottom of the bottom current stabilization part；And
An at least foundation bilge cod is connected between the bottom upper clamp plate and the bottom lower clamp plate；
Wherein, when the bottom current stabilization part be inserted into second groove when, process gas can on said bottom clamping plate and
It circulates between the bottom lower clamp plate.
Further, the height of the top current stabilization part is more than the height of the bottom current stabilization part.
Further, the range of the height of the top current stabilization part and the bottom current stabilization part 2 millimeters to 7 millimeters it
Between.
Further, the cassette includes multiple first grooves and multiple top current stabilization parts, wherein Duo Gesuo
It states top current stabilization part to be arranged in parallel, and each drawing out type in multiple top current stabilization parts is inserted into one described first
Groove, so that process gas can circulate between the two neighboring top current stabilization part.
Further, the cassette includes multiple second grooves and multiple bottom current stabilization parts, wherein Duo Gesuo
It states bottom current stabilization part to be arranged in parallel, and each drawing out type in multiple bottom current stabilization parts is inserted into one described second
Groove, so that process gas can circulate between the two neighboring bottom current stabilization part.
Further, multiple top current stabilization parts are formed by height and are formed by more than multiple bottom current stabilization parts
Highly.
Further, multiple top current stabilization parts are formed by the range of height at 2 millimeters to 7 millimeters, multiple described
Bottom current stabilization part is formed by the range of height at 2 millimeters to 7 millimeters.
Further, the head cover, the pedestal and the connecting pole are integrally formed, the top current stabilization part, the bottom
Portion's current stabilization part is formed in identical material with the head cover.
As the 4th aspect of the embodiment of the present invention, the embodiment of the present invention provides a kind of atomic layer deposition boiler tube, including
Cassette as described above；And it is arranged in the gas syringe outside the cassette.
The embodiment of the present invention uses above-mentioned technical proposal, can improve the atomic layer deposition film thickness uniformity, and promote yield.
Above-mentioned general introduction is merely to illustrate that the purpose of book, it is not intended to be limited in any way.Except foregoing description
Schematical aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, the present invention is further
Aspect, embodiment and feature, which will be, to be readily apparent that.
Description of the drawings
In the accompanying drawings, unless specified otherwise herein, otherwise run through the identical reference numeral of multiple attached drawings and indicate same or analogous
Component or element.What these attached drawings were not necessarily to scale.It should be understood that these attached drawings are depicted only according to the present invention
Some disclosed embodiments, and should not serve to limit the scope of the present invention.
Fig. 1 is the structural schematic diagram of cassette in the prior art and gas syringe.
Fig. 2-1 and Fig. 2-2 is deposition film schematic diagram in the prior art.
Fig. 3 is the structural schematic diagram of the ALD boiler tubes of embodiment one.
Fig. 4 is the structural schematic diagram of the cassette of embodiment one.
Fig. 5 is the method flow diagram of the improvement ALD film thickness uniformity of embodiment one.
Fig. 6 is the relation curve of the edge yield loss and cassette position of the ALD boiler tube deposition films in embodiment one
Figure.
Fig. 7-1 to Fig. 7-3 is the manufacture process craft figure of the capacitor of embodiment one.
Fig. 8 is the structural schematic diagram of the ALD boiler tubes in embodiment two.
Reference sign：
The prior art：
100：Cassette； 10A′：The wafer at top； 10B′：The wafer of bottom；
10C′：The wafer at middle part； 11A′：Top/bottom wafers film； 11C′：Middle part wafer film；
A：Flow-disturbing phenomenon； 21′：Gas syringe.
The embodiment of the present invention：
10：Wafer； 20：ALD boiler tubes； 200：Cassette；
210：Loading frame； 211：Head cover； 211A：The periphery of head cover；
212：Pedestal； 212B：Opening； 212A：The periphery of pedestal；
213：Connecting pole； 213D：The inner wall of connecting pole； 213A：First groove；
220：Top current stabilization part； 221：Top upper clamp plate； 222：Top lower clamp plate；
223：Top struts； 213B：Second groove； 230：Bottom current stabilization part；
231：Bottom upper clamp plate； 232：Bottom lower clamp plate； 233：Bottom shore；
213C：Third groove； 21：Gas syringe； 22：Gas outlet；
30：ALD boiler tubes； 300：Cassette； 310：Loading frame；
313：Connecting pole； 313A：First groove； 313B：Second groove；
313C：Third groove； 320：Top current stabilization part； 330：Bottom current stabilization part；
40：Capacitance； 41：Lower electrode plate； 41A：Skeleton；
41B：Support construction； 42：Dielectric layer； 43：Electric pole plate；
44：Conductor structure； 44A：First conducting wire； 44B：Second conducting wire.
Specific implementation mode
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present invention, described embodiment can be changed by various different modes.
Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on ... shown in the drawings or
Position relationship is merely for convenience of description of the present invention and simplification of the description, and does not indicate or imply the indicated device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；Can be that machinery connects
It connects, can also be electrical connection, can also be communication；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the interaction relationship of the connection or two elements inside two elements.For the ordinary skill in the art, may be used
To understand the concrete meaning of above-mentioned term in the present invention as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature the "upper" of second feature or "lower"
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " include first special
Sign is right over second feature and oblique upper, or is merely representative of fisrt feature level height and is higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include fisrt feature right over second feature and oblique upper, or be merely representative of
Fisrt feature level height is less than second feature.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.
Embodiment one
As shown in figure 3, the present embodiment provides a kind of ALD boiler tubes 20, it is used for ALD deposition method, including be used to carry wafer
10 cassette 200 and the gas syringe 21 being arranged in outside cassette 200 and gas outlet 22.The system that gas syringe 21 sprays
Journey gas is deposited on wafer 10 to form film via cassette 200, and ALD boiler tubes will be discharged from gas outlet 22 in remaining process gas
20。
Cassette 200 includes loading frame 210, top current stabilization part 220 and bottom current stabilization part 230, wherein loading frame 210 includes
Head cover 211 positioned at top, the pedestal 212 positioned at 200 bottom of cassette and more connecting poles 213.
As shown in figure 4, the periphery 212A of pedestal 212 is identical as the periphery 211A shapes of head cover 211, it is preferable that pedestal 212
Periphery 212A, the periphery 211A of head cover 211, top current stabilization part 220 and bottom current stabilization part 230 periphery be circle, also,
Head cover 211, top current stabilization part 220, bottom current stabilization part 230, pedestal 212 and wafer 10 are arranged in parallel.Pedestal 212 is additionally provided with out
Mouth 212B, for coordinating the other structures of ALD boiler tubes 20 to be risen up into inside cassette 200 from opening 212B.
More connecting poles 213 are connected to vertically between the periphery 211A of head cover 211 and the periphery 212A of pedestal 212, so that
Head cover 211 and pedestal 212 are each perpendicular to the setting of connecting pole 213.Multiple third groove 213C are opened in the inner wall of connecting pole 213
213D, and between the first groove 213A and the second groove 213B, for being inserted into wafer 10.The present embodiment is preferably 3 companies
Column 213 is connect, and is distributed in the same semicircle side of the periphery 211A of head cover 211, so that third can be inserted is recessed for circular wafer 10
Slot 213C.
Incorporated by reference to Fig. 3 and Fig. 4, the first groove 213A is opened in the inner wall 213D of connecting pole 213, and is located at connecting pole 213
Top.Current stabilization part 220 drawing out type in top is inserted into the first groove 213A, you can, can also be to be inserted into the first groove 213A
It is extracted in first groove 213A.In the present embodiment, the quantity of top current stabilization part 220 is one, including is located at top current stabilization
The top upper clamp plate 221 at the top of part 220, positioned at the bottom of top current stabilization part 220 top lower clamp plate 222 and be connected to top
Top struts 223 between upper clamp plate 221 and top lower clamp plate 222.The quantity of top struts 223 can be one or more,
For connecting top upper clamp plate 221 and top lower clamp plate 222, and can when top current stabilization part 220 is inserted into the first groove 213A,
Make process gas that can circulate in the horizontal direction between clamping plate 221 and top lower clamp plate 222 on the top, even if process gas sprays
The process gas that 21 top of device sprays can flow to the other end from one end of loading frame 210 in the horizontal direction.
In the present embodiment, top upper clamp plate 221 and the preferably whole plane of top lower clamp plate 222, i.e., no trepanning, thus
When top current stabilization part 220 is inserted into the first groove 213A, top current stabilization part 220 can form resistance between head cover 211 and wafer 10
Gear, i.e. water conservancy diversion process gas in the horizontal direction allow process gas between head cover 211 and wafer 10 in the horizontal direction
The other end is flowed to from one end of top current stabilization part 220, to which effectively control process gas flows to, and then improves process gas in crystalline substance
The gas at the top of boat 200 spreads the uniformity, and can be to avoid the dust pollution caused by process gas flow-disturbing.
Preferably, the height of top current stabilization part 220 is (i.e. under the upper surface and top lower clamp plate 222 of top upper clamp plate 221
The distance between surface) range at 2 millimeters (mm) to 7mm so that top current stabilization part 220 can fill loading frame as far as possible
210 headspace.
Please continue to refer to Fig. 3 and Fig. 4, the second groove 213B is opened in the inner wall 213D of connecting pole 213, and is located at connecting pole
213 bottom.Current stabilization part 230 drawing out type in bottom is inserted into the second groove 213B.In the present embodiment, the number of bottom current stabilization part 230
Amount is one, includes that the bottom upper clamp plate 231 positioned at bottom, the bottom lower clamp plate 232 positioned at bottom and being connected on bottom presss from both sides
Bottom shore 233 between plate 231 and bottom lower clamp plate 232.The quantity of top struts 233 can be one or more, be used for
Bottom upper clamp plate 231 and bottom lower clamp plate 232 are connected, and system can be made when bottom current stabilization part 230 is inserted into the second groove 213B
Journey gas can in the horizontal direction circulate between bottom upper clamp plate 231 and bottom lower clamp plate 232, even if process gas injector 21
The process gas that bottom sprays can flow to the other end from one end of loading frame 210 in the horizontal direction.
In the present embodiment, bottom upper clamp plate 231 and the preferably whole plane of bottom lower clamp plate 232, i.e., no trepanning, thus
When bottom current stabilization part 230 is inserted into the second groove 213B, bottom current stabilization part 230 can form resistance between pedestal 212 and wafer 10
Gear, i.e. water conservancy diversion process gas in the horizontal direction allow process gas between pedestal 212 and wafer 10 in the horizontal direction
The other end is flowed to from one end of top current stabilization part 220, to which effectively control process gas flows to, and then improves process gas in crystalline substance
The gas of the bottom of boat 200 spreads the uniformity, and can be to avoid the dust pollution caused by process gas flow-disturbing.
Preferably, the height of bottom current stabilization part 230 is (i.e. under the upper surface of bottom upper clamp plate 231 and bottom lower clamp plate 232
The distance between surface) range in 2mm to 7mm so that bottom current stabilization part 230 can fill the bottom of loading frame 210 as far as possible
Portion space.In addition, the height of top current stabilization part 220 should be greater than the height of bottom current stabilization part 230, to match used in ALD boiler tubes
The design of cassette 200.
Preferably, head cover 211, pedestal 212 and connecting pole 213 are integrally formed, top current stabilization part 220, bottom current stabilization part 230
It is formed in identical material with head cover 211, i.e., entire boiler tube 200 is formed in same material, for example, quartz or silicon carbide.
As the other side of the present embodiment, the present embodiment also provides a kind of method improving the ALD film thickness uniformity, answers
For above-mentioned cassette 200, as shown in figure 5, including：
Step S210 provides the cassette 200 for carrying wafer, wherein including inserting 220 drawing out type of top current stabilization part
Enter the first groove 213A, and current stabilization part 230 drawing out type in bottom is inserted into the second groove 213B；
Step S220 loads multiple wafers 10 in loading frame 210, includes that can extract each in multiple wafers 10
Formula is inserted into a third groove 213C；
Step S230 carries out ALD deposition technique, includes being discharged into process gas by the gas syringe 21 of ALD boiler tubes 20, system
Journey gas is deposited on multiple wafers 10 to form film via cassette 200, wherein top current stabilization part 220 and bottom current stabilization part 230
The process gas of the top and bottom of cassette 200 can be adsorbed, and process gas can be improved in the top and bottom of cassette 200
Gas spreads the uniformity, to which effectively reduction is positioned at the film deposition of thick at the edge of the wafer 10 of the top and bottom of cassette 200
Degree, to be effectively improved film thickness uniformity.
It is the relation curve of film edge yield loss and cassette position as shown in Figure 6, wherein S1 is that this implementation is not used
The method of example carries out the curve of film deposition, and S2 is the curve that film deposition is carried out using the method for the present embodiment, and Z1 is cassette
Top area, Z2 are cassette bottom sections, it can be seen that it is thick uniformly to be effectively improved ALD film using the method for the present embodiment
Degree reduces film edge yield loss, improves product yield.
As the other side of the present embodiment, the present embodiment also provides a kind of manufacture of the two-sided columnar capacitor of stack
Method please refers to Fig. 7-1 to Fig. 7-3, it should be noted that structure shown in identical hatching pattern is same structure.
First, electrode plate 41 under being formed above the wafer 10, as shown in Fig. 7-1, lower electrode plate 41 include skeleton 41A and
Include interval setting successively from the bottom to top to the support construction 41B of support frame 41A, support construction 41B.The shape of skeleton 41A
Can be titanium nitride (TiN) at material；The forming material of support construction 41B can be silicon nitride (SiN).It should be noted that
Electrode plate 41 is not offered as lower electrode plate 41 under being formed above wafer 10 and the upper surface of wafer 10 is in direct contact, usually in crystalline substance
Further include other semiconductor structures, such as substrate and storage node contacts between the upper surface and lower electrode plate 41 of circle 10.
Then, preferable in the surface of lower electrode plate 41 formation film thickness uniformity using the method for step S210 to step S230
Dielectric layer 42, as shown in Fig. 7-2.The forming material of dielectric substance layer 42 usually selects the material of high-k.
Then, electric pole plate 43 is re-formed in the surface of dielectric layer 42, as shown in Fig. 7-2, the formation material of electric pole plate 43
Material can be TiN.
Finally, conductor structure 44 is re-formed in the surface of electric pole plate 43, and the surface for being included in electric pole plate 43 carries out boron
Doped germanium silicon (B-dope Si-Ge) deposition forms the first conducting wire 44A, then carries out boron doping polycrystalline on the first surfaces conducting wire 44A
Silicon (B-dope Poly) deposition forms the second conducting wire 44B, i.e. conductor structure 44 includes the first conducting wire 44A and the second conducting wire 44B,
As shown in Fig. 7-3.
The capacitor 40 being consequently formed is the two-sided columnar capacitor of stack, including lower electrode plate 41, dielectric layer 42, is powered on
Pole plate 43 and conductor structure 44, dielectric layer 42 are the method shapes using the improvement atomic layer deposition film thickness uniformity of the present embodiment
At, therefore there is preferable film thickness uniformity, and then the manufacturing yield of the two-sided columnar capacitor of stack can be improved.
Embodiment two
As shown in figure 8, the present embodiment provides a kind of ALD boiler tubes 30, it is used for ALD deposition method, including be used to carry wafer
10 cassette 300, the gas syringe 21 being arranged in outside cassette 300 and gas outlet 22.Difference lies in embodiment one
The setting of one groove, the second groove, top current stabilization part and bottom current stabilization part.
Referring to Fig. 8, there are the loading frame 310 of cassette 300 more connecting poles 313, more connecting poles 313 to be connected to vertically
Between the periphery 211A of head cover 211 and the periphery 212A of pedestal 212, so that head cover 211 and pedestal 212 are each perpendicular to connecting pole
313 settings.
The inner wall 313D, multiple second groove 313B that multiple first groove 313A are opened in connecting pole 313 are opened in connection
The inner wall 313D, multiple third groove 313C of column 313 are opened in the inner wall 313D of connecting pole 313, and positioned at the first of bottom
Between groove 313A and the second groove 313B of the top, each third groove 313C is for being inserted into a wafer 10.This reality
It is preferably 3 connecting poles 313 to apply example, and is distributed in the same semicircle side of the periphery 211A of head cover 211, so that circular wafer 10
Third groove 313C can be inserted.
The cassette 300 of the present embodiment includes multiple top current stabilization parts 320 and multiple bottom current stabilization parts 330, wherein multiple
Each drawing out type in top current stabilization part 320 is inserted into a first groove 313A, so that process gas can be adjacent two
It circulates between a top current stabilization part 320, and then improves gas of the process gas at the top of cassette 300 and spread the uniformity；It is multiple
Each drawing out type in bottom current stabilization part 330 is inserted into a second groove 313B, so that process gas can be adjacent two
It circulates between a bottom current stabilization part 330, and then improves gas of the process gas in the bottom of cassette 300 and spread the uniformity.
Preferably, multiple top current stabilization parts 320 and multiple bottom current stabilization parts 330 are arranged in parallel, and it is preferably circular.
Preferably, the quantity of top current stabilization part 320 can be set according to the amount of headspace of cassette 300, for example, top
The quantity of portion's current stabilization part 320 is two, i.e. the thickness of 320A and 320B, each top current stabilization part 320 preferably make multiple tops
Current stabilization part 320 is formed by height (the i.e. top current stabilization part of the upper surface and bottom of the top current stabilization part 320A of the top
The distance between lower surface of 320B) range in 2mm to 7mm so that multiple top current stabilization parts 320 can fill crystalline substance as far as possible
The headspace of boat 300.The quantity of bottom current stabilization part 330 can be set according to the bottom space size of cassette 300, for example,
The quantity of bottom current stabilization part 330 is two, i.e. 330A and 330B, the thickness of each bottom current stabilization part 330 preferably make multiple bottoms
Portion's current stabilization part 330 is formed by height (the i.e. bottom current stabilization part of the upper surface and bottom of the bottom current stabilization part 330A of the top
The distance between lower surface of 330B) range in 2mm to 7mm so that multiple bottom current stabilization parts 330 can fill crystalline substance as far as possible
The bottom space of boat 300.In addition, multiple top current stabilization parts 320, which are formed by height, should be greater than multiple 330 shapes of bottom current stabilization part
At height, to match the design of the cassette 300 used in ALD boiler tubes.
In the present embodiment, top current stabilization part 320 and the preferably whole plane of bottom current stabilization part 330, i.e., no trepanning, thus
When top current stabilization part 320 is inserted into the first groove 313A, top current stabilization part 320 can form resistance between head cover 211 and wafer 10
Gear, i.e. water conservancy diversion process gas in the horizontal direction, allow the process gas between head cover 211 and wafer 10 on two neighboring top
Bottom horizontal flow sheet between portion current stabilization part 320A and 320B；And when bottom current stabilization part 330 is inserted into the second groove 313B, bottom is steady
Stream part 330 can form blocking between pedestal 212 and wafer 10, i.e. water conservancy diversion process gas in the horizontal direction, make pedestal 212
Process gas between wafer 10 can be in the bottom horizontal flow sheet between two neighboring bottom current stabilization part 330A and 330B, to have
Effect control process gas flow direction, and then improve gas of the process gas in the top and bottom of cassette 300 and spread the uniformity, and can
To avoid the dust pollution caused by process gas flow-disturbing.
Multiple top current stabilization parts 320, multiple bottom current stabilization parts 330 and head cover 211 are formed in identical material, i.e., entire stove
Pipe 300 is formed in same material, for example, quartz or silicon carbide.
In the present embodiment, multiple top current stabilization parts 320 and multiple bottom current stabilization parts 330 can adsorb the top of cassette 300
With the process gas of bottom, deposited to effectively reduce the film at edge of the wafer 10 positioned at the top and bottom of cassette 300
Thickness to be effectively improved film thickness uniformity, and improves product yield.
In addition, in the present embodiment, the thickness of each top current stabilization part 320 and bottom current stabilization part 330 may be set to standard
Value, according to the number of top current stabilization part 320 and bottom current stabilization part 330 that the top and bottom space size adjustment of ALD boiler tubes is inserted into
Amount, to be conducive to standardized production.
As the other side of the present embodiment, the present embodiment also provides a kind of method improving the ALD film thickness uniformity, answers
For in above-mentioned cassette 300, including：
Step S310 provides the cassette 300 for carrying wafer, wherein including will be every in multiple top current stabilization parts 320
One drawing out type is inserted into a first groove 313A, each drawing out type in multiple bottom current stabilization parts 330 is inserted into one
A second groove 313B；
Step S320 loads multiple wafers 10 in loading frame 210, includes that can extract each in multiple wafers 10
Formula is inserted into a third groove 313C；
Step S330 carries out ALD deposition technique, includes being discharged into process gas by the gas syringe 21 of ALD boiler tubes 20, system
Journey gas is deposited on multiple wafers 10 to form film via cassette 300, wherein top current stabilization part 320 and bottom current stabilization part 330
The process gas of the top and bottom of cassette 300 can be adsorbed, and process gas can be improved in the top and bottom of cassette 300
Gas spreads the uniformity, to which effectively reduction is positioned at the film deposition of thick at the edge of the wafer 10 of the top and bottom of cassette 300
Degree, to be effectively improved film thickness uniformity.
As the other side of the present embodiment, the present embodiment also provides a kind of manufacture of the two-sided columnar capacitor of stack
Method, difference lies in form the dielectric layer of capacitor using the method for step S310 to step S330 with embodiment one.
Above examples provide a variety of cassettes, and above-mentioned cassette is used in ALD processing procedures, can improve the ALD film thickness uniformity,
And then improve the manufacturing yield of product.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in its various change or replacement,
These should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the guarantor of the claim
It protects subject to range.
Claims (17)
1. a kind of method improving the atomic layer deposition film thickness uniformity, which is characterized in that including：
Cassette for carrying wafer is provided；
Wherein, the cassette includes loading frame, has the head cover positioned at top, positioned at the pedestal of bottom and more vertical connections
Connecting pole between the periphery of the head cover and the periphery of the pedestal,
The inner wall of the connecting pole offers the first groove, the second groove and multiple third grooves, and first groove is located at institute
State the top of connecting pole；Second groove is located at the bottom of the connecting pole；The third groove is located at first groove
Between second groove, for being inserted into the wafer,
The cassette further includes top current stabilization part and bottom current stabilization part,
It is inserted into the top current stabilization part drawing out type first groove, is hindered with being formed between the head cover and the wafer
Gear；The bottom current stabilization part drawing out type is inserted into second groove, is stopped with being formed between the pedestal and the wafer,
Wherein, the head cover, the top current stabilization part, the bottom current stabilization part and the pedestal are arranged in parallel；
Multiple wafers are loaded in the loading frame, include that each drawing out type in the multiple wafer is inserted into described the
Three grooves；
Atom layer deposition process is carried out, includes that process gas, the processing procedure are discharged by the gas syringe of atomic layer deposition boiler tube
Gas is deposited on the multiple wafer to form film via the cassette, and the top current stabilization part and the bottom current stabilization part change
Kind gas of the process gas in the top and bottom of the cassette spreads the uniformity.
2. according to the method described in claim 1, it is characterized in that, the top current stabilization part includes under top upper clamp plate and top
Clamping plate and at least top struts being connected between the top upper clamp plate and the top lower clamp plate, wherein described
Top upper clamp plate and the top lower clamp plate are arranged in parallel and the step of progress atom layer deposition process includes：
The process gas circulates between the top upper clamp plate and the top lower clamp plate.
3. according to the method described in claim 1, it is characterized in that, the bottom current stabilization part includes under bottom upper clamp plate and bottom
Clamping plate and at least foundation bilge cod being connected between the bottom upper clamp plate and the bottom lower clamp plate, wherein described
Bottom upper clamp plate and the bottom lower clamp plate are arranged in parallel and the step of progress atom layer deposition process includes：
The process gas circulates between clamping plate and the bottom lower clamp plate on said bottom.
4. according to the method described in claim 1, it is characterized in that, the step of cassette of the offer for carrying wafer wrap
It includes：
Offer includes the cassette of multiple first grooves and multiple top current stabilization parts, wherein multiple top current stabilizations
Part is arranged in parallel, and each drawing out type in multiple top current stabilization parts is inserted into first groove；With
And
The step of progress atom layer deposition process includes：
The process gas circulates between the two neighboring top current stabilization part.
5. according to the method described in claim 1, it is characterized in that, the step of cassette of the offer for carrying wafer wrap
It includes：
Offer includes the cassette of multiple second grooves and multiple bottom current stabilization parts, wherein multiple bottom current stabilizations
Part is arranged in parallel, and each drawing out type in multiple bottom current stabilization parts is inserted into second groove；With
And
The step of progress atom layer deposition process includes：
The process gas circulates between the two neighboring bottom current stabilization part.
6. a kind of manufacturing method of capacitor, which is characterized in that including：
Lower electrode plate is formed in the top of wafer；
Dielectric layer is formed in described in the method described in any one of claim 1 to 5 for improving the atomic layer deposition film thickness uniformity
The surface of lower electrode plate；
Electric pole plate is formed in the surface of the dielectric layer；
Conductor structure is formed in the surface of the electric pole plate.
7. a kind of cassette for carrying wafer, which is characterized in that including：
There is loading frame head cover, the pedestal positioned at bottom and more connecting poles, the connecting pole positioned at top to be connected to vertically
Between the periphery of the head cover and the periphery of the pedestal；And the inner wall of the connecting pole offers the first groove, second recessed
Slot and multiple third grooves, first groove are located at the top of the connecting pole；Second groove is located at the connecting pole
Bottom；The third groove is between first groove and second groove, for being inserted into wafer；
Top current stabilization part is inserted into drawing out type first groove, is stopped with being formed between the head cover and the wafer；
Bottom current stabilization part, drawing out type are inserted into second groove, are stopped with being formed between the pedestal and the wafer,
Wherein, the head cover, the top current stabilization part, the bottom current stabilization part and the pedestal are arranged in parallel.
8. cassette according to claim 7, which is characterized in that the top current stabilization part includes：
Top upper clamp plate is located at the top of the top current stabilization part；
Top lower clamp plate is parallel to the top upper clamp plate setting, and positioned at the bottom of the top current stabilization part；And
An at least top struts are connected between the top upper clamp plate and the top lower clamp plate；
Wherein, when the top current stabilization part is inserted into first groove, process gas can be in the top upper clamp plate and described
It circulates between the lower clamp plate of top.
9. cassette according to claim 7, which is characterized in that the bottom current stabilization part includes：
Bottom upper clamp plate is located at the top of the bottom current stabilization part；
Bottom lower clamp plate is parallel to the bottom upper clamp plate setting, and positioned at the bottom of the bottom current stabilization part；And
An at least foundation bilge cod is connected between the bottom upper clamp plate and the bottom lower clamp plate；
Wherein, when the bottom current stabilization part is inserted into second groove, process gas can clamping plate and described on said bottom
It circulates between the lower clamp plate of bottom.
10. cassette according to claim 7, which is characterized in that it is steady that the height of the top current stabilization part is more than the bottom
Flow the height of part.
11. cassette according to claim 7, which is characterized in that the height of the top current stabilization part and the bottom current stabilization part
The range of degree is between 2 millimeters to 7 millimeters.
12. cassette according to claim 7, which is characterized in that the cassette includes multiple first grooves and multiple
The top current stabilization part, wherein multiple top current stabilization parts are arranged in parallel, and each in multiple top current stabilization parts
A drawing out type is inserted into first groove, so that process gas can flow between the two neighboring top current stabilization part
It is logical.
13. cassette according to claim 12, which is characterized in that the cassette includes multiple second grooves and multiple
The bottom current stabilization part, wherein multiple bottom current stabilization parts are arranged in parallel, and each in multiple bottom current stabilization parts
A drawing out type is inserted into second groove, so that process gas can flow between the two neighboring bottom current stabilization part
It is logical.
14. cassette according to claim 13, which is characterized in that multiple top current stabilization parts are formed by height and are more than
Multiple bottom current stabilization parts are formed by height.
15. cassette according to claim 13, which is characterized in that multiple top current stabilization parts are formed by the model of height
2 millimeters to 7 millimeters are trapped among, multiple bottom current stabilization parts are formed by the range of height at 2 millimeters to 7 millimeters.
16. cassette according to claim 7, which is characterized in that the head cover, the pedestal and the connecting pole one at
Type, the top current stabilization part, the bottom current stabilization part and the head cover are formed in identical material.
17. a kind of atomic layer deposition boiler tube, which is characterized in that including such as claim 7 to 16 any one of them cassette；And
The gas syringe being arranged in outside the cassette.
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| CN109371383A (en) * | 2018-12-25 | 2019-02-22 | 南京爱通智能科技有限公司 | A kind of carrier suitable for ultra-large atomic layer deposition apparatus |
| CN109385622A (en) * | 2018-12-25 | 2019-02-26 | 南京爱通智能科技有限公司 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
| CN110648899A (en) * | 2019-09-06 | 2020-01-03 | 上海华力集成电路制造有限公司 | Method for depositing silicon nitride by atomic layer deposition process and semiconductor wafer |
| CN111139451A (en) * | 2020-01-02 | 2020-05-12 | 长江存储科技有限责任公司 | Film structure, film structure deposition method and equipment |
| CN111312637A (en) * | 2020-02-28 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Wafer bearing device and vertical diffusion furnace |
| CN113488382A (en) * | 2021-05-31 | 2021-10-08 | 北海惠科半导体科技有限公司 | Wafer boat and diffusion equipment |
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