CN108624841A

CN108624841A - Mask plate and preparation method thereof

Info

Publication number: CN108624841A
Application number: CN201810415666.1A
Authority: CN
Inventors: 刘孟彬; 罗海龙
Original assignee: China Core Integrated Circuit Ningbo Co Ltd
Current assignee: China Core Integrated Circuit Ningbo Co Ltd
Priority date: 2018-05-03
Filing date: 2018-05-03
Publication date: 2018-10-09
Anticipated expiration: 2038-05-03
Also published as: CN108624841B

Abstract

A kind of mask plate and preparation method thereof, mask plate includes：Substrate, substrate include first surface and the second surface opposite with first surface, and there are multiple openings through substrate, substrate can be patterned using semiconductor etching process in substrate；Positioned at the mask pattern layer of first surface, mask pattern layer includes adjacent graph area and blocked area, and graph area has at least one through-hole through mask pattern layer, wherein opening exposing graph area, and each graph area is corresponding with opening；Sacrificial layer, between substrate and mask pattern layer.Mask plate of the present invention is using made by semiconductor technology, compared with the metal mask version made by traditional chemical etching mode, semiconductor technology can improve the quality and through-hole precision of the mask plate, and be conducive to reduce clear size of opening and mask pattern layer thickness, it can also prevent mask pattern layer and substrate from generating displacement, the quality and precision higher of mask plate.

Description

Mask plate and preparation method thereof

Technical field

The present invention relates to field of semiconductor manufacture more particularly to a kind of mask plate and preparation method thereof.

Background technology

Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) technology is broadly divided into vapor deposition (Evaporation) two kinds of technique and sputter (Sputtering) technique.Wherein, evaporation process is to form function in substrate surface The major way of film layer, evaporation process refer in vacuum evaporation plating machine (Vacuum Evaporator) that evaporation source is (such as to be plated Metal, alloy or compound) heating fusing, so that it is escaped in molecule or state of atom, deposition forms solid-state to substrate surface The method of film or coating.

Currently, evaporation process mainly uses metal mask version (Metal Mask), the metal mask version to have default figure The through-hole of case, during evaporation process, the metal mask version is fixed on substrate, face to be deposited and the vapor deposition of the substrate Source is opposite, and the filmogen from the evaporation source is made to pass through the through-hole vapor deposition in the face to be deposited, to form default figure The film of case.

The metal mask version of OLED (Organic Light-Emitting Diode, organic light emitting display) usually makes at present It is prepared with 30 μm of invar alloy (INVAR, also known as invar) to 50 μ m-thicks and by the method for chemical etching, first in invar Alloy surface coats photoresist or photosensitive dry film, by way of exposure by the transfer of the fine pattern of mask plate on light-sensitive surface, Again develop and chemical etching by way of be eventually fabricated fine metal mask version, by this method its precision usually in micron Grade, general minimum can only accomplish 25 μm to 40 μm, therefore the quality of manufactured metal mask plate and precision cannot expire well Sufficient process requirements requirement.

Invention content

Problems solved by the invention is to provide a kind of mask plate and preparation method thereof, improves the quality and precisely of mask plate Degree.

To solve the above problems, the present invention provides a kind of mask plate, including：Substrate, the substrate include first surface with And the second surface opposite with the first surface, the interior multiple openings having through the substrate of the substrate, the substrate It can be patterned using semiconductor etching process；Positioned at the mask pattern layer of the first surface, the mask pattern layer Including adjacent graph area and blocked area, the graph area has at least one through-hole through the mask pattern layer, wherein The opening exposes the graph area, and each graph area is corresponding with the opening；Sacrificial layer is located at the substrate and described Between mask pattern layer.

Correspondingly, the present invention also provides a kind of production methods of mask plate, including：Substrate is provided, the substrate includes the One surface and the second surface opposite with the first surface；Sacrificial layer is formed on the first surface；In the sacrifice Mask layer is formed on layer；The graphical mask layer forms graph area and adjacent with the graph area blocks Area forms at least one through-hole through the mask layer in the graph area, and it is graphical after remaining mask material Layer is used as mask pattern layer；After forming the mask pattern layer, the second surface of the substrate is etched, is formed in the substrate Multiple openings through the substrate and the exposing graph area, and each opening is corresponding with the graph area；Described in formation After opening, using the substrate as mask, the sacrificial layer of the graph area is removed.

Compared with prior art, technical scheme of the present invention has the following advantages：

After the present invention forms sacrificial layer and mask layer on the first surface of substrate successively, the graphical mask material The bed of material, forming graph area has the mask pattern layer of through-hole, and after forming the mask pattern layer, using the sacrificial layer as The etch-protecting layer of the mask pattern layer, etches the second surface of the substrate, is formed in the substrate and runs through the lining Bottom and the multiple openings for exposing the graph area, and each opening is corresponding with the graph area, is then to cover with the substrate Film removes the sacrificial layer of the graph area, and the opening and through-hole is made to connect, and normal with mask plate made by realization makes With；Mask plate of the present invention uses made by the semiconductor technologies such as deposition, lithography and etching, with use traditional chemical etching side Metal mask version (such as fine metal mask version) made by formula is compared, and semiconductor technology can improve the matter of the mask plate Amount and through-hole precision, and the thickness of the size for reducing the through-hole and the mask pattern layer is also helped, to meet half The continuous reduction of conductor structure characteristic size improves the limit of the clear size of opening and the mask pattern layer thickness to evaporation process System；Moreover, when etching the second surface of the substrate, the sacrificial layer can play the mask pattern layer protection and make With, to reduce the technique for etching substrate etching injury caused by the mask pattern layer, be conducive to improve described in cover The quality of film version；In addition, the mask pattern layer is formed in by semiconductor technology on the substrate, the substrate can be to institute It states mask pattern layer to play the role of supporting and fixing, and is covered with metal mask version is welded in metal by way of laser welding Scheme on film chase frame is compared, additionally it is possible to prevent the mask pattern layer and the substrate from generating displacement；So institute of the present invention The quality and precision higher for stating mask plate are conducive to the precision for improving evaporation process.

In alternative, the mask pattern layer include towards the third surface of the substrate first surface and with institute State the 4th surface of third surface opposite, the mask plate further includes metal layer, the metal layer cover the 4th surface with And the side wall of the through-hole, either cover the third surface or the covering third surface and the 4th surface；The metal Layer can play a supporting role to the mask pattern layer, can reduce the mask pattern layer bend or be broken it is general Rate, meanwhile, after evaporation process completion, mask plate need to usually be cleaned, the metal layer can also be in the cleaning It plays a protective role in the process to the mask pattern layer, prevents the mask pattern layer to be cleaned solution and corroded, to have Conducive to the service life of the increase mask plate.

Description of the drawings

Fig. 1 is the structural schematic diagram of one embodiment of mask plate of the present invention；

Fig. 2 is the structural schematic diagram of another embodiment of mask plate of the present invention；

Fig. 3 to Figure 10 be mask plate of the present invention production method first embodiment in the corresponding structural schematic diagram of each step；

Figure 11 to Figure 16 be mask plate of the present invention production method second embodiment in the corresponding structural schematic diagram of each step；

Figure 17 and Figure 18 be mask plate of the present invention production method 3rd embodiment in the corresponding structural schematic diagram of each step；

Figure 19 and Figure 20 be mask plate of the present invention production method fourth embodiment in the corresponding structural schematic diagram of each step；

Figure 21 and Figure 22 be mask plate of the present invention the 5th embodiment of production method in the corresponding structural schematic diagram of each step；

Figure 23 to Figure 27 be mask plate of the present invention production method sixth embodiment in the corresponding structural schematic diagram of each step.

Specific implementation mode

By background technology it is found that the quality of metal mask plate and precision are not well positioned to meet process requirements requirement.

In order to solve the technical problem, mask plate is made using semiconductor technologies such as deposition, lithography and etchings in the present invention, Compared with using the metal mask version made by traditional chemical etching mode, semiconductor technology can improve the matter of the mask plate Amount and through-hole precision, to improve the quality and precision of the mask plate.

To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.

Fig. 1 is the structural schematic diagram of one embodiment of mask plate of the present invention.

In the present embodiment, the mask plate includes：Substrate 10, the substrate 10 include first surface 12 and with described the The opposite second surface 13 in one surface 12, interior multiple first openings 11 having through the substrate 10 of the substrate 10 are described Substrate 10 can be patterned using semiconductor etching process；It is described positioned at the mask pattern layer 30 of the first surface 12 Mask pattern layer 30 includes adjacent graph area I and blocked area II, and the graph area I has at least one through the mask figure The through-hole 31 of shape layer 30, wherein first opening 11 exposes the graph area I, and each graph area I is open with described first 11 is corresponding.

The mask plate is vapor deposition mask plate, and the mask plate is using semiconductor technologies such as deposition, lithography and etchings Made, compared with using the metal mask version made by traditional chemical etching mode, semiconductor technology can improve described cover The precision of the quality of film version and the through-hole 31；And the mask pattern layer 30 is formed in the substrate by semiconductor technology On 10, the substrate 10 can play the role of supporting and fixing to the mask pattern layer 30, and conventional metals mask plate is usual Need to be welded in by way of laser welding on metal mask chase frame could use, and in the welding process, be susceptible to institute The problems such as tension is uneven or fuel factor of metal mask version application is stated, is covered so as to cause the metal mask version and the metal Film chase frame generates displacement, therefore compared with conventional metals mask plate, the present embodiment can also prevent the mask pattern layer 30 Displacement is generated with the substrate 10；Therefore, the quality of mask plate described in the present embodiment and precision are higher.

In the present embodiment, the substrate 10 can be patterned using semiconductor etching process, first opening 11 It is formed by semiconductor etching process.

In the present embodiment, the substrate 10 is semiconductor substrate.Semiconductor substrate is common substrate in semiconductor technology Type.

Specifically, the substrate 10 is silicon substrate.In other embodiments, the material of the substrate can also be germanium, germanium The other materials such as SiClx, silicon carbide, GaAs or gallium indium, the substrate can also be silicon substrate or insulation on insulator The other kinds of semiconductor substrate such as the germanium substrate on body.The material of the substrate 10 can be suitable for technique to need or be easy to Integrated material.

It should be noted that in other embodiments, the substrate can also be other using semiconductor etching process The material being patterned, for example, the substrate can also be silicon oxide substrate etc..

In the present embodiment, the first surface 12 of the substrate 10 provides technique for the formation of the mask pattern layer 30 and puts down The second surface 13 of platform, the substrate 10 provides technique platform for the formation of first opening 11.

It should be noted that making the technology difficulty of the mask plate and in order to reduce convenient for the reality of the mask plate Border uses, and the substrate 10 is planar substrates.

The quantity of first opening 11 is multiple, and first opening 11 exposes the graph area I, and each graph area I is corresponding with first opening 11, so as to during evaporation process, pass through first opening 11 and the mask The through-hole 31 of graph layer 30 forms the film of predetermined pattern.In the present embodiment, for the ease of illustration, only illustrate that one first is opened Mouthfuls 11 and with first opening, 11 corresponding graph area I.

In the present embodiment, projection of first opening 11 on the mask pattern layer 30 is be overlapped with the graph area I phases It closes；Correspondingly, the substrate 10 covers the blocked area II, projection and institute of the substrate 10 on the mask pattern layer 30 Blocked area II is stated to coincide.

Specifically, the mask plate in actual use, the mask pattern layer 30 is backwards to the substrate 10 1 The surface of side towards face to be deposited, the mask pattern layer 30 towards 10 side of the substrate surface towards evaporation source, come from The filmogen of the evaporation source passes sequentially through first opening 11 and the through-hole 31 is deposited in the face to be deposited, described The substrate 100 of blocked area II is used for being not intended to the face region to be deposited of film forming to block, to form the thin of predetermined pattern Film.

As shown in Figure 1, in the present embodiment, by tool in the mask pattern layer 30 of the graph area I, there are three for through-hole 31 It illustrates.In other embodiments, the quantity of the through-hole is not limited only to three, and the quantity of the through-hole can be according to reality Depending on process requirements.

It should be noted that in order to reduce the technology difficulty for making the mask plate, selection technique is common and technique is integrated Spend material of the higher material as the mask pattern layer 30.

In the present embodiment, the material of the mask pattern layer 30 is silicon nitride.The hardness of silicon nitride material is larger, therefore energy The mechanical strength for enough improving the mask pattern layer 30, reduce the mask pattern layer 30 occur bending and deformation or be broken it is general Rate, to be conducive to improve the mask plate quality and the through-hole 31 precision.In other embodiments, the mask The material of graph layer can also be silica, silicon oxynitride, carbonitride of silicium, polysilicon or aluminium.

It should also be noted that, the depth T2 of the through-hole 31 is bigger, the thickness (not indicating) of the mask pattern layer 30 Corresponding bigger, then the mechanical strength of the mask pattern layer 30 is also bigger, and the mechanical strength of the mask plate is accordingly bigger, still The depth T2 of the through-hole 31 is unsuitable too small, also should not be too large.If the depth T2 of the through-hole 31 is too small, i.e., the described mask figure The thickness of shape layer 30 is too small, then easily causes the problem of 30 mechanical strength of the mask pattern layer deficiency, to be covered described in reduction The quality of film version, or even influence the normal use of the mask plate；If the depth T2 of the through-hole 31 is excessive, i.e., the described mask The thickness of graph layer 30 is excessive, then is easy to generate shadow effect during vapor deposition, to be formed by the shape of film to vapor deposition Looks generate harmful effect.For this purpose, in the present embodiment, the depth T2 of the through-hole 31 is 2 μm to 10 μm, i.e., the described mask pattern layer 30 thickness is 2 μm to 10 μm.

In addition, compared with conventional metals mask plate, the present embodiment forms the mask plate by semiconductor fabrication process, from And be conducive to reduce the opening size of the through-hole 31, and then meet the ever-reduced requirement of semiconductor structure characteristic size.

In the present embodiment, the shape of the through-hole 31 is circle.In other embodiments, according to the need of actual film pattern It asks, the through-hole can also be other shapes.

It continues to refer to figure 1, in the present embodiment, the mask plate further includes：Sacrificial layer 20 is located at the substrate 10 and described Between mask pattern layer 30.

In the manufacturing process of the mask plate, the first opening 11 institute's shape by way of etching the substrate 10 At, and before forming first opening 11, the sacrificial layer 20 usually covers the first surface 12 of the substrate 10, i.e. institute It states sacrificial layer 20 and covers the mask pattern layer 30, the sacrificial layer 20 is used in the technical process for etching the substrate 10, It plays a protective role to the mask pattern layer 30, to reduce probability of the mask pattern layer 30 by etching injury, into And be conducive to further increase the quality of the mask plate.

Correspondingly, in the manufacturing process of the mask plate, in order to enable first opening 11 to expose the through-hole 31, the step of making the mask plate, which also typically includes, removes the sacrificial layers 20 that first opening 11 is exposed, described to make First opening 11 and through-hole 31 connect, and then realize the normal usage function of the mask plate.

Therefore, the material of the sacrificial layer 20 and the material of the mask pattern layer 30 and substrate 10 have higher quarter Erosion selection ratio, and the material of the sacrificial layer 20 is the material for being easy to be removed, to reduce removal 11 dew of the first opening The technology difficulty of the sacrificial layer 20 gone out, and reduce the technique for removing the sacrificial layer 20 to the substrate 10 and mask pattern layer 30 Damage.

In the present embodiment, the material of the sacrificial layer 20 is silica.In other embodiments, the material of the sacrificial layer Can also be silicon nitride, amorphous carbon or germanium.

It should be noted that the thickness T1 of the sacrificial layer 20 is unsuitable too small, also should not be too large.If the sacrificial layer 20 Thickness T1 it is too small, can accordingly reduce the protective effect to the mask pattern layer 30, the mask pattern layer 30 is forming institute State higher by the probability of etching injury during the first opening 11, the quality to be easy to cause the mask plate declines； If the thickness T1 of the sacrificial layer 20 is excessive, the integral thickness for being easy to cause the mask plate is excessive, that is, leads to described cover The volume of film version is excessive, can accordingly reduce the property easy to use of the mask plate, and can also cause process resource and the wave of cost Take.For this purpose, in the present embodiment, the thickness T1 of the sacrificial layer 20 is 2 μm to 10 μm.

It should also be noted that, the mask plate further includes protective layer 40, it is located at the mask pattern layer 30 backwards to described On the blocked area surfaces II of 10 side of substrate.

The protective layer 40 is used for etching the substrate 10 to be formed in the technical process of first opening 11, for institute State mask pattern layer 30 and support be provided, fallen off to reduce the mask pattern layer 30, flexural deformation or fracture it is general Rate, and then be conducive to further increase the quality and precision of the mask plate；Moreover, exposing removing first opening 11 Sacrificial layer 20 during, the protective layer 40 the mask pattern layer 30 of the blocked area II can also be played protection make With reducing the probability that the mask pattern layer 30 is damaged；In addition, during the use of the mask plate, the protection Layer 40 still is able to play a protective role to the mask pattern layer 30 of the blocked area II, reduces the mask pattern layer 30 and is damaged The probability of wound, to increase the service life of the mask plate.

Correspondingly, in order to realize the normal usage function of the mask plate, it is formed with described in exposing in the protective layer 40 Second opening 41 of graph area I mask patterns layer 30, first opening 11, the opening of through-hole 31 and second 41 are mutually communicated, from And make the filmogen of the evaporation source pass sequentially through it is described first opening 11, through-hole 31 and second opening 41 vapor deposition waited in described Vapor deposition face.

Therefore, the material of the protective layer 40 and the material of the substrate 10 and sacrificial layer 20 are selected with higher etching Ratio is selected, and in order to reduce the technology difficulty for making the mask plate, selection technique is common and the higher material of process integration is made For the material of the protective layer 40.

In the present embodiment, the material of the protective layer 40 is polysilicon.In other embodiments, the material of the protective layer Can also be silicon nitride, silica, silicon oxynitride, carbonitride of silicium or aluminium.

It should be noted that the thickness T3 of the protective layer 40 is unsuitable too small, also should not be too large.If the protective layer 40 Thickness T3 it is too small, then be easily reduced support and protecting effect of the protective layer 40 to the mask pattern layer 30；If institute The thickness T3 for stating protective layer 40 is excessive, then be easy to cause the mask pattern layer 30 towards 20 side of the sacrificial layer surface extremely The distance in face to be deposited is excessive, and to deteriorate shadow effect during vapor deposition, the pattern that film is formed by vapor deposition produces Raw harmful effect.For this purpose, in the present embodiment, the thickness T3 of the protective layer 40 is 2 μm to 10 μm.

It should also be noted that, in the manufacturing process of the mask plate, due to before forming first opening 11, The sacrificial layer 20 covers the first surface 12 of the substrate 10, i.e., the sacrificial layer 20 covers the mask pattern layer 30, because This described sacrificial layer 20 is formed by the side wall that polymer is attached to the through-hole 31 when can also prevent from etching the substrate 10, To avoid the etching technics from causing etching to be lost the protective layer 40 by the through-hole 31, and then avoid the formation of described The technique of first opening 11 has an impact the function of the protective layer 40.

With reference to figure 2, the structural schematic diagram of another embodiment of mask plate of the present invention is shown.

The something in common of the present embodiment and previous embodiment, details are not described herein.The present embodiment and previous embodiment are not It is with place：The mask plate further includes metal layer 75, the mechanical strength for improving the mask pattern layer 70.

Specifically, the mask pattern layer 70 include towards the third surface 72 of 50 first surface 52 of the substrate and Fourth surface 73 opposite with the third surface 72, the metal layer 75 can cover 72 and the 4th surface of the third surface 73, alternatively, the metal layer 75 covers the side wall of the 4th surface 73 and the through-hole 71, alternatively, the metal layer 75 Only cover the third surface 72.

The metal layer 75 can play a supporting role to the mask pattern layer 70, can reduce the mask pattern layer 70 occur bending and deformation or be broken probability, improve the mechanical strength of the mask pattern layer 70, it is described to further increase The mechanical strength of mask plate, and then improve the precision of the quality and the through-hole 71 of the mask plate.

Moreover, after evaporation process completion, mask plate need to usually be cleaned, the metal layer 75 can also be in institute It states in cleaning process and plays a protective role to the mask pattern layer 70, prevent the mask pattern layer 70 to be cleaned solution institute rotten Erosion, to be conducive to increase the service life of the mask plate.

Therefore, the metal layer 75 has higher mechanical strength and corrosion resistance.Specifically, the metal layer 75 Material can be one or more in Ni, Ag, Au, Cu, Pt, Cr, Mo, Ti, Ta, Sn, W and Al.

In the present embodiment, illustrated so that the metal layer 75 covers 72 and the 4th surface 73 of the third surface as an example.

The metal layer 75 covers two opposite surfaces of the mask pattern layer 70, so as to significantly improve described cover The mechanical strength of film pattern layer 70；Moreover, can avoid the problem that the metal layer 75 occupies 71 space of the through-hole, accordingly may be used To reduce the influence to evaporation process and quality of forming film.

In the present embodiment, the shape of the through-hole 71 is circle.In other embodiments, according to the need of actual film pattern It asks, the through-hole can also be other shapes.

It should be noted that the thickness T4 of the metal layer 75 is bigger, prevent the mask pattern layer 70 from bending change Shape or the effect of fracture are better, and the mechanical strength of the mask pattern layer 70 is bigger, and the mechanical strength of the mask plate is accordingly got over Greatly, but the thickness T4 of the metal layer 75 is unsuitable too small, also should not be too large.If the thickness T4 of the metal layer 75 is too small, The effect for then improving the mask plate mechanical strength is poor；If the thickness T4 of the metal layer 75 is excessive, can cause described The integral thickness of mask plate is excessive, can deteriorate the shadow effect during vapor deposition instead, and when the metal layer 75 also covers When the side wall of the through-hole 71, the space of the through-hole 71 accordingly can be also occupied too much, to influence the mask plate just It is often used, and is also easy to influence formation quality of the metal layer 75 in the through-hole 71.For this purpose, in the present embodiment, it is described The thickness T4 of metal layer 75 is less than the radius (not indicating) of the through-hole 71.

Correspondingly, when the metal layer 75 covers the side wall on the 4th surface 73 and the through-hole 71, it is located at institute 75 thickness of metal layer for stating 71 side wall of through-hole is less than the radius of the through-hole 71.

The metal layer 75 has higher mechanical strength, can further be carried using the smaller metal layer 75 of thickness The mechanical strength of the high mask plate, therefore before ensureing that the mask plate quality and 71 precision of the through-hole are impregnable It puts, can suitably reduce the thickness (not indicating) of the mask pattern layer 70 or the thickness (not indicating) of the protective layer 80, To be conducive to reduce the integral thickness of the mask plate, improve the shadow effect during vapor deposition.

Correspondingly, the present invention also provides a kind of production methods of mask plate.Fig. 3 to Figure 10 is the making of mask plate of the present invention The corresponding structural schematic diagram of each step in method first embodiment.

With reference to figure 3, provide substrate 100, the substrate 100 include first surface 120 and with 120 phase of the first surface The second surface 130 of the back of the body.

The substrate 100 to the mask pattern layer of formed mask plate for playing the role of supporting and fixing.

In the present embodiment, the substrate 100 can be patterned using semiconductor etching process, so as to follow-up By etching technics in processing procedure, the first opening is formed in the substrate 100.

In the present embodiment, the substrate 100 is semiconductor substrate.Semiconductor substrate is common substrate in semiconductor technology Type.

Specifically, the substrate 100 is silicon substrate.In other embodiments, the material of the substrate can also be germanium, germanium The other materials such as SiClx, silicon carbide, GaAs or gallium indium, the substrate can also be silicon substrate or insulation on insulator The other kinds of semiconductor substrate such as the germanium substrate on body.The material of the substrate can be suitable for technique to need or be easy to collect At material.

In the present embodiment, the first surface 120 is used to provide technique platform to be subsequently formed mask pattern layer, and described the Two surfaces 130 are used to provide technique platform subsequently to form the first opening in the substrate 100.It is covered described in making to reduce The technology difficulty of film version and actual use convenient for the mask plate, the substrate 100 are planar substrates.

In conjunction with reference to figure 4 and Fig. 5, sacrificial layer 150 (as shown in Figure 4) is formed on the first surface 120；Described sacrificial Mask layer 250 (as shown in Figure 5) is formed on domestic animal layer 150.

Subsequently through the graphical mask layer 250, forms graph area and adjacent with the graph area block Area, and at least one through-hole through the mask layer is formed in the graph area, the remaining mask material after making graphically The bed of material is used to be used as mask pattern layer.

After forming the mask pattern layer, subsequent step further includes the second surface 130 for etching the substrate 100, in institute The first opening for being formed in substrate 100 and being connected with the through-hole is stated, the sacrificial layer 150 is used to etch the substrate 100 Technical process in, play a protective role to the mask pattern layer, to reduce the mask pattern layer by etching injury Probability, and then be conducive to improve the quality of the follow-up made mask plate.

Wherein, it connects with the through-hole in the mask pattern layer to make first in the substrate 100 to be open, subsequently It also needs to remove the sacrificial layer 150 that first opening is exposed, therefore, the material of the sacrificial layer 150 and the mask layer 250 and the material of substrate 100 there is higher etching selection ratio, and the material of the sacrificial layer 150 is easy to be removed Material to reduce the technology difficulty for subsequently removing the sacrificial layer 150 that first opening is exposed, and reduces the removal sacrifice Damage of the technique of layer 150 to the substrate 100 and mask pattern layer.

In the present embodiment, the material of the sacrificial layer 150 is silica.The technique for removing silica material is relatively simple, And the cost of silica material is relatively low, therefore also help the cost of manufacture for reducing the mask plate.

In other embodiments, the material of the sacrificial layer can also be silicon nitride, amorphous carbon or germanium.

It should be noted that the thickness H1 (as shown in Figure 4) of the sacrificial layer 150 is unsuitable too small, also should not be too large.If The thickness H1 of the sacrificial layer 150 is too small, can accordingly reduce the protective effect subsequently to the mask pattern layer, the mask figure Shape layer is higher by the probability of etching injury during forming first opening, to be easy to cause the mask plate Quality declines；If the thickness H1 of the sacrificial layer 150 is excessive, the integral thickness for being easy to cause the mask plate is excessive, i.e., Cause the volume of the mask plate excessive, can accordingly reduce the property easy to use of the mask plate, can also cause process resource and The waste of cost, and can also increase the technology difficulty for subsequently removing the sacrificial layer 150.For this purpose, in the present embodiment, the sacrifice The thickness H1 of layer 150 is 2 μm to 10 μm.

In the present embodiment, in order to reduce the technology difficulty for making the mask plate, selection technique is commonly used and process integration Material of the higher material as the mask layer 250.

In the present embodiment, the material of the mask layer 250 is silicon nitride.The hardness of silicon nitride material is larger, therefore The mechanical strength that follow-up formed mask pattern layer can be improved, reduces what the mask pattern layer was occured bending and deformation or was broken Probability, to be conducive to improve the mask plate quality and the through-hole precision.In other embodiments, the mask The material of material layer can also be silica, silicon oxynitride, carbonitride of silicium, polysilicon or aluminium.

It should be noted that the thickness H2 (as shown in Figure 5) of the mask layer 250 is bigger, formed mask pattern The mechanical strength of layer is accordingly bigger, and the mechanical strength of made mask plate is also bigger, but the thickness of the mask layer 250 H2 is unsuitable too small, also should not be too large.If the thickness H2 of the mask layer 250 is too small, the thickness of the mask pattern layer Degree is corresponding too small, then easily causes the problem of mask plate mechanical strength deficiency, to reduce the quality of the mask plate with The precision of the through-hole；If the thickness H2 of the mask layer 250 is excessive, the depth of the through-hole is accordingly excessive, then It is easy to generate shadow effect during vapor deposition, the pattern to be formed by vapor deposition film generates harmful effect.For this purpose, this In embodiment, the thickness H2 of the mask layer 250 is 2 μm to 10 μm.

In conjunction with reference to figure 6 to Fig. 8, the graphical mask layer 250 (as shown in Figure 7) forms graph area I (such as Fig. 8 It is shown) and the blocked area II (as shown in Figure 8) adjacent with the graph area I, form at least one run through in the graph area I The through-hole 210 (as shown in Figure 8) of the mask layer 250, and it is graphical after remaining mask layer 250 be used as mask figure Shape layer 200 (as shown in Figure 8).

During evaporation process, the film of predetermined pattern is formed on face to be deposited by the mask pattern layer 200

Specifically, the mask plate in actual use, the mask pattern layer 200 is backwards to the substrate 100 The surface of side towards face to be deposited, the mask pattern layer 200 towards the surface of 100 side of the substrate towards evaporation source, Filmogen from the evaporation source is deposited by the through-hole 210 in the face to be deposited, and the film of predetermined pattern is formed.

There are three illustrated for through-hole 210 to be formed in the mask pattern layer 200 of the graph area I for the present embodiment. In other embodiments, the quantity of the through-hole is not limited only to three, and the quantity of the through-hole can be according to actual process demand Depending on.

In the present embodiment, the shape of the through-hole 210 is circle.In other embodiments, according to actual film pattern Demand, the through-hole can also be other shapes.

In the present embodiment, the material of the mask layer 250 is silicon nitride, correspondingly, the mask pattern layer 200 Material is silicon nitride.In other embodiments, the material of the mask pattern layer can also be silica, silicon oxynitride, carbon nitrogen SiClx, polysilicon or aluminium.

In the present embodiment, the thickness H2 of the mask layer 250 (as shown in Figure 5) is 2 μm to 10 μm, correspondingly, institute The thickness (not indicating) for stating mask pattern layer 200 is 2 μm to 10 μm, and the depth (not indicating) of the through-hole 210 is 2 μm to 10 μ m。

It should be noted that compared with the production method of conventional metals mask plate (such as fine metal mask version), this reality It applies example and the mask plate is made by semiconductor technology, to be conducive to reduce the opening size of the through-hole 210, to meet The ever-reduced requirement of semiconductor structure characteristic size.

In the present embodiment, the graphical mask layer 250 by the way of dry etching, to be conducive to improve institute State the pattern quality of through-hole 210.

With continued reference to Fig. 6 and Fig. 7, it is also necessary to explanation, after forming mask layer 250 on the sacrificial layer 150, Before the graphical mask layer 250, further include：Protective film 165 is formed on the mask layer 250 (such as Fig. 6 institutes Show)；The graphical protective film 165, removes the protection on mask layer 250 corresponding to the graph area I (as shown in Figure 8) Film 165, the protective film 165 retained on mask layer 250 corresponding to the blocked area II (as shown in Figure 8) are used as protective layer 160。

The protective layer 160 is used for subsequently etching the substrate 100 to be formed in the technical process of first opening, For 200 offer support (as shown in Figure 8) of the mask pattern layer, falls off, is bent to reduce the mask pattern layer 200 Deformation or fracture probability, and then be conducive to further increase the mask plate quality and the through-hole 210 (such as Fig. 8 institutes Show) precision；Moreover, when subsequently removing the sacrificial layer 150 that first opening is exposed, the protective layer 160 can also be right The mask pattern layer 200 of the blocked area II plays a protective role, and reduces the probability that the mask pattern layer 200 is damaged； In addition, during the use of the mask plate, the protective layer 160 still is able to the mask pattern layer to the blocked area II 200 play a protective role, and reduce the probability that the mask pattern layer 200 is damaged, to increase the use of the mask plate Service life.

For this purpose, there is higher etching selection ratio between the sacrificial layer 150 and the protective layer 160, and in order to reduce The technology difficulty of the mask plate is made, selection technique is common and the higher material of process integration is as the protective layer 160 Material.

In the present embodiment, the material of the protective layer 160 is polysilicon.In other embodiments, the material of the protective layer Material can also be silicon nitride, silica, silicon oxynitride, carbonitride of silicium or aluminium.

Correspondingly, in order to realize the normal usage function of the mask plate, it is formed with described in exposing in the protective layer 160 Second 170 (as shown in Figure 7) of opening of graph area I mask patterns layer 200, first opening 110, through-hole 210 and second are opened Mouth 170 is mutually communicated, to make the filmogen of the evaporation source pass sequentially through first opening 110, through-hole 210 and second 170 vapor deposition of opening is in the face to be deposited.

It should be noted that the side by forming the protective layer 160 before the graphical mask layer 250 Formula, the technique that can avoid the formation of the protective layer 160 have an impact the pattern quality of the through-hole 210, to avoid pair The quality and precision of made mask plate have an impact.

It should also be noted that, the thickness H3 (as shown in Figure 7) of the protective layer 160 is unsuitable too small, also should not be too large.Such as The thickness H3 of protective layer 160 described in fruit is too small, then is easy to cause protection of the protective layer 160 to the mask pattern layer 200 It is bad with support effect；If the thickness H3 of the protective layer 160 is excessive, it is easy to cause 200 direction of mask pattern layer The distance in surface to the face to be deposited of 150 side of the sacrificial layer is excessive, right to deteriorate shadow effect during vapor deposition The pattern that vapor deposition is formed by film generates harmful effect.For this purpose, in the present embodiment, the thickness H3 of the protective layer 160 is 2 μm To 10 μm.

In the present embodiment, the graphical protective film 165 by the way of dry etching, to be conducive to improve the guarantor The quality of profile of sheath 160, and then be conducive to improve the pattern quality that formed film is deposited.

In the present embodiment, since the sacrificial layer 150 covers the first surface 120 of the substrate 100, subsequent etching When the substrate 100 is to form the first opening, the sacrificial layer 150 can prevent from being formed by polymer when etching and being attached to institute The side wall for stating through-hole 210, to avoid the etching technics from causing etching to damage the protective layer 160 by the through-hole 210 Consumption, and then the technique for avoiding the formation of first opening has an impact the function of the protective layer 160.

With reference to figure 9, after forming the mask pattern layer 200, the second surface 130 of the substrate 100 is etched, in the lining Multiple first openings 110 of the graph area I, and every one first opening are formed through the substrate 100 and exposed in bottom 100 110 is corresponding with the graph area I.

The substrate 100 to the mask pattern layer 200 for playing the role of supporting and fixing.Wherein, subsequently through making The mode that first opening 110 and the through-hole 210 connect, realizes the normal usage function of made mask plate.

The quantity of first opening 110 is multiple, and first opening 110 exposes the graph area I, and each figure Area I and first opening are 110 corresponding, the mask plate in actual use, the filmogen from evaporation source First opening 110 and the vapor deposition of the through-hole 210 are passed sequentially through in the face to be deposited, forms the film of predetermined pattern.This In embodiment, for the ease of illustration, only illustrate one first opening 110 and with it is described first opening 110 corresponding figures Area I.

In the present embodiment, first 110 projections on the mask pattern layer 200 of opening and the graph area I phases It overlaps, projection of the substrate 100 on the mask pattern layer 200 coincides with the blocked area II.Correspondingly, etching institute In the step of stating second surface 130 of substrate 100, the second surface 130 corresponding to the graph area I is performed etching.

It should be noted that being formed with the sacrificial layer 150 on the first surface 120 of the substrate 100, therefore form institute After stating the first opening 110, first opening 110 exposes the sacrificial layer 150.

It is mask with the substrate 100, removes the graph area I's after forming first opening 110 with reference to figure 10 Sacrificial layer 150.

By removing the sacrificial layer 150 of the graph area I, make first opening 110, the opening of through-hole 210 and second 170 It connects, to realize the normal usage function of the mask plate.

Specifically, the mask plate in actual use, the filmogen from the evaporation source passes sequentially through First opening 110,170 vapor deposition of the opening of through-hole 210 and second form the film of predetermined pattern in the face to be deposited.

In the present embodiment, plasma damage is caused to the mask pattern layer 200 in order to prevent, using wet etching work Skill, the sacrificial layer 150 of removal 110 exposing of the first opening.

Specifically, the material of the sacrificial layer 150 is silica, etching solution phase used by the wet-etching technology It should be hydrofluoric acid solution.In other embodiments, such as when the material of the sacrificial layer is amorphous carbon, ashing can also be used Technique, the sacrificial layer that removal first opening is exposed.

In the present embodiment, the mask plate uses made by the semiconductor technologies such as deposition, lithography and etching, traditional with using Metal mask version made by chemical etching mode is compared, and semiconductor technology can improve the quality and through-hole of the mask plate 210 precisions, and the thickness of the opening size and the mask pattern layer 200 that reduce the through-hole 210 is also helped, with full The continuous reduction of sufficient semiconductor structure characteristic size, opening size and the mask pattern layer 200 for improving the through-hole 210 are thick Spend the limitation to evaporation process.

In addition, the mask pattern layer 200 is formed in by semiconductor technology on the substrate 100,100 energy of the substrate It is enough to play the role of supporting and fixing to the mask pattern layer 200, metal mask version is welded with by way of laser welding It is compared in the scheme on metal mask chase frame, additionally it is possible to prevent the mask pattern layer 200 and the substrate 100 from generating displacement The problem of；So the quality and precision higher of mask plate described in the present embodiment, are conducive to the precision for improving evaporation process.

Figure 11 to Figure 16 be mask plate of the present invention production method second embodiment in the corresponding structural schematic diagram of each step.

In place of the present embodiment is basically the same as those in the first embodiment, details are not described herein.The present embodiment and first embodiment are not It is with place：1600 (such as Figure 14 of the protective layer is formed after forming the mask pattern layer 2000 (as shown in figure 11) It is shown).

Specifically, in conjunction with reference to figure 11 and Figure 12, after forming the mask pattern layer 2000, the shape in the through-hole 2100 At filled layer 1900 (as shown in figure 12), 1900 top of the filled layer is flushed with 2000 top of the mask pattern layer.

The filled layer 1900 to the through-hole 2100 in the technical process for being subsequently formed protective layer for playing protection Effect reduces influence of the technique for forming the protective layer to 2100 pattern quality of the through-hole.

Moreover, in the etching technics for forming the protective layer, the filled layer 1900 can also prevent etching when institute's shape At polymer be attached to the side wall of the through-hole 2100, to avoid the etching technics by the through-hole 2100 to described Sacrificial layer 1500 causes etching to be lost.

It should be noted that subsequently also needing to remove the filled layer 1900, to make to be formed in the substrate 1000 First opening and the through-hole 2100 connect, and then realize the normal use of the mask plate；Therefore, the filled layer 1900 Material and the material of the mask pattern layer 2000 there is higher etching selection ratio, and the material of the filled layer 1900 is It is easy to the material being removed, to reduce the technology difficulty for removing the filled layer 1900, and reduces the removal filled layer Damage of 1900 technique to the mask pattern layer 2000.

In the present embodiment, the material of the filled layer 1900 is different with the material of the mask pattern layer 2000, and in order to The sacrificial layer 1500 and filled layer 1900 can be subsequently removed in same processing step, to simplify processing step, improve institute State the producing efficiency of mask plate, the material identical of the material of the filled layer 1900 and the sacrificial layer 1500.

In the present embodiment, the material of the sacrificial layer 1500 is silica, and the material of the filled layer 1900 mutually should be oxygen SiClx.In other embodiments, the material of the sacrificial layer can also be silicon nitride, amorphous carbon or germanium.

Specifically, the step of forming the filled layer 1900 include：Encapsulant layer, institute are formed in the through-hole 2100 It states encapsulant layer and also covers 2000 top of the mask pattern layer；Using flatening process, removal is higher than the mask pattern The encapsulant layer at 2000 top of layer, retains the encapsulant layer in the through-hole 2100 as filled layer 1900.

In conjunction with reference to figure 13 and Figure 14, the protective film 1650 for covering the mask pattern layer 2000 and filled layer 1900 is formed (as shown in figure 13)；The graphical protective film 1650, removes on the graph area I mask patterns layer 2000 and filled layer 1900 Protective film 1650, retain protective film 1650 on the blocked area II mask patterns layer 2000 as protective layer 1600 (as schemed Shown in 14).

In the present embodiment, the material of the protective layer 1600 is polysilicon.In other embodiments, the material of the protective layer Material can also be silicon nitride, silica, silicon oxynitride, carbonitride of silicium or aluminium.

In order to realize the normal usage function of the mask plate, after the graphical protective film 1650, the protective layer The second 1700 (as shown in figure 14) of opening for exposing the graph area I mask patterns layer 2000 are formed in 1600.

To the specific descriptions of the protective layer 1600, the corresponding description in production method first embodiment, this reality can refer to Applying example, details are not described herein.

With reference to figure 15, after forming the protective layer 1600, the second surface 1300 of the substrate 1000 is etched, in the lining Multiple first openings 1100 of the graph area I are formed through the substrate 1000 and exposed in bottom 1000, and every 1 first opens Mouth 1100 is corresponding with the graph area I.

To the specific descriptions for the step of forming first opening 1100, the phase in production method first embodiment can refer to It should describe, details are not described herein for the present embodiment.

It is mask with the substrate 1000, removes the graph area I after forming first opening 1100 with reference to figure 16 Sacrificial layer 1500.

In the present embodiment, plasma damage is caused to the mask pattern layer 2000 in order to prevent, using wet etching Technique, the sacrificial layer 1500 of removal 1100 exposing of the first opening.

It should be noted that the material identical of the material and the filled layer 1900 due to the sacrificial layer 1500, The wet-etching technology also removes the filled layer 1900, to make first opening 1100, through-hole 2100 and second open Mouth 1700 is mutually communicated, and then the filmogen of the evaporation source is made to pass sequentially through first opening 1100,2100 and of through-hole Second opening, 1700 vapor deposition is in the face to be deposited.

To the specific descriptions of production method described in the present embodiment, the corresponding description in first embodiment, this implementation can refer to Details are not described herein for example.

Figure 17 and Figure 18 be mask plate of the present invention production method 3rd embodiment in the corresponding structural schematic diagram of each step.

The something in common of the present embodiment and second embodiment, details are not described herein.The present embodiment and second embodiment are not It is with place：As shown in figure 18, the production method further includes in the mask pattern layer 400 backwards to the substrate 300 1 The side wall of the surface of side and the through-hole 410 forms metal layer 420.

The metal layer 420 can play a supporting role to the mask pattern layer 400, can reduce the mask pattern The mechanical strength of probability, the raising mask pattern layer 400 that layer 400 is occured bending and deformation or be broken, to further increase The mechanical strength of the mask plate, and then improve the precision of the quality and the through-hole 410 of the mask plate.

Moreover, after evaporation process completion, mask plate need to usually be cleaned, the metal layer 420 can also be It plays a protective role to the mask pattern layer 400 in the cleaning process, the mask pattern layer 400 is prevented to be cleaned solution Corroded, to be conducive to increase the service life of the mask plate.

Specifically, the production method of the mask plate includes：

With reference to figure 17, after forming the mask pattern layer 400, in 400 top of the mask pattern layer, the through-hole 410 Side wall and bottom formed metal film 425.

The metal film 425 is used to provide Process ba- sis to be subsequently formed metal layer, i.e., subsequently through the graphical gold Belong to film 425, to form metal layer.

In order to enable the metal layer effectively to play a supporting role to the mask pattern layer 400, and in mask plate Play a protective role to the mask pattern layer 400 in cleaning process, the metal film 425 have higher mechanical strength and Corrosion resistance.In the present embodiment, the material of the metal film 425 can be Ni, Ag, Au, Cu, Pt, Cr, Mo, Ti, Ta, Sn, W With it is one or more in Al, the metal film 425 can be formed by way of vapor deposition, sputtering or plating.

It should be noted that the thickness H4 of the metal film 425 is bigger, the mechanical strength of follow-up formed metal layer is got over Greatly, the effect for improving the mechanical strength of the mask pattern layer 400 is better, but the thickness H4 of the metal film 425 should not mistake It is small, also it should not be too large.If the thickness H4 of the metal film 425 is too small, be difficult to decrease the mask pattern layer 400 occur it is curved The probability of song deformation or fracture；If the thickness H4 of the metal film 425 is excessive, it is easy to cause the whole thick of the mask plate It spends greatly, to influence the normal use of the mask plate, is easy to deteriorate the shadow effect during vapor deposition, but also can reduce Formation quality of the metal film 425 in the through-hole 410, in addition, ought subsequently be formed by metal layer covers the through-hole When 410 side wall, the thickness H4 of the metal film 425 is excessive accordingly also to cause the metal layer to occupy the through-hole too much 410 space, to influence the normal use of the mask plate.For this purpose, in the present embodiment, the thickness H4 of the metal film 425 Less than the radius (not indicating) of the through-hole 410.

It should also be noted that, to forming the mask pattern layer 400 and being formed before the mask pattern layer 400 The specific descriptions of processing step can refer to the corresponding description in first embodiment, and details are not described herein for the present embodiment.

With reference to figure 18, the metal film 425 (as shown in figure 17) of 410 bottom of the through-hole is etched, the mask pattern is retained The metal film 425 of 400 top of layer and 410 side wall of the through-hole is used as metal layer 420.

In the present embodiment, the material of the metal film 425 can be Ni, Ag, Au, Cu, Pt, Cr, Mo, Ti, Ta, Sn, W and It is one or more in Al, correspondingly, the material of the metal layer 420 can be Ni, Ag, Au, Cu, Pt, Cr, Mo, Ti, Ta, It is one or more in Sn, W and Al.

In the present embodiment, the thickness of the metal layer 420 is less than the radius of the through-hole 410, correspondingly, positioned at described logical 420 thickness of metal layer on 410 side wall of hole is less than the radius of the through-hole 410.

Specifically, the step of forming the metal layer 420 include：Photoresist layer is formed on the metal film 425, and (figure is not Show), the photoresist layer covering is located at the metal film 425 at 400 top of the mask pattern layer and is located at 410 side of the through-hole The metal film 425 of wall, and expose the metal film 425 of 410 bottom of the through-hole；With the photoresist layer mask, etching removal institute The metal film 425 of 410 bottom of through-hole is stated, the gold for being located at 400 top of the mask pattern layer and 410 side wall of the through-hole is retained Belong to film 425 as the metal layer 420；After forming the metal layer 420, the photoresist layer is removed.

In the present embodiment, after the metal film 425 for etching 410 bottom of the through-hole, be formed by metal layer 420 cover it is described Mask pattern layer 400 is backwards to the surface of 300 side of the substrate and the side wall of the through-hole 410, to the mask figure Shape layer 400 is played a supporting role, and improves the mechanical strength of the mask pattern layer 400, and then improves the machine of the mask plate Tool intensity.

Wherein, the metal layer 420 has higher mechanical strength, using the smaller metal layer 420 of thickness The mechanical strength of the mask plate is further increased, therefore is ensureing the mask plate quality and 410 precision of the through-hole not Under the premise of impacted, it can suitably reduce the thickness of the mask pattern layer 400, to be conducive to reduce the mask plate Integral thickness improves the shadow effect during vapor deposition.

In the present embodiment, after forming the metal layer 420, subsequent step further includes the metal layer in the blocked area II Protective layer is formed on 420, and the second opening for exposing the graph area I mask patterns layer 400 is formed in the protective layer；It is formed After the protective layer, the second surface 330 of the substrate 300 is etched, is formed in the substrate 300 and runs through the substrate 300 And expose multiple first openings of the graph area I, and every one first opening is corresponding with the graph area I；Form described After one opening, it is mask with the substrate 300, removes the sacrificial layer 350 of the graph area I, makes first opening, through-hole 410 and second opening be mutually communicated.

Wherein, the specific descriptions to the processing step for forming the protective layer can refer to accordingly retouching in second embodiment It states.

It should be noted that the specific descriptions of production method described in the present embodiment, in combination with reference in second embodiment Corresponding description, details are not described herein for the present embodiment.

Figure 19 and Figure 20 be mask plate of the present invention production method fourth embodiment in the corresponding structural schematic diagram of each step.

The something in common of the present embodiment and 3rd embodiment, details are not described herein.The present embodiment and 3rd embodiment are not It is with place：As shown in figure 20, the metal layer 620 only covers the mask pattern layer 600 towards 500 side of the substrate Surface.

Specifically, it with reference to figure 19, is formed before mask layer (not shown) on the sacrificial layer 550, described sacrificial Metal film 625 is formed on domestic animal layer 550.

Continue to refer to figure 19, after forming the metal film 625, the graphical mask layer, formed graph area I and The blocked area II adjacent with the graph area I forms at least one through-hole through the mask layer in the graph area I 610, and it is graphical after remaining mask layer as mask pattern layer 600.

Correspondingly, after forming the mask pattern layer 600,610 exposed portion metal film 625 of the through-hole.

In conjunction with reference to figure 20, after forming the mask pattern layer 600, the metal film 625 of 610 bottom of the through-hole is etched (as shown in figure 19), the metal film 625 retained between the mask pattern layer 600 and the sacrificial layer 550 are used as metal layer 620。

By etching the metal film 625 of 610 bottom of through-hole, so as to make to be subsequently formed in the substrate 500 The first opening can connect with the through-hole 610, and then realize the normal usage function of the mask plate.

Moreover, the metal layer 620 only covers surface of the mask pattern layer 600 towards 500 side of the substrate, from And while improving the mechanical strength of the mask pattern layer 600, avoid the metal layer 620 from occupying the through-hole 610 empty Between the problem of, and then the influence to evaporation process and quality of forming film can be reduced.

In the present embodiment, after forming the metal layer 620, subsequent step further includes the mask pattern in the blocked area II Protective layer is formed on layer 600, the second opening for exposing the graph area I mask patterns layer 600 is formed in the protective layer；Shape After the protective layer, the second surface (not indicating) of the substrate 500 is etched, is formed through described in the substrate 500 Substrate 500 and multiple first openings for exposing the graph area I, and every one first opening is corresponding with the graph area I；It is formed After first opening, it is mask with the substrate 500, removes the sacrificial layer 550 of the graph area I, make described first to be open, The opening of through-hole 610 and second is mutually communicated.

It should be noted that the specific descriptions of production method described in the present embodiment, in combination with reference to second embodiment and Corresponding description in 3rd embodiment, details are not described herein for the present embodiment.

Figure 21 and Figure 22 be mask plate of the present invention the 5th embodiment of production method in the corresponding structural schematic diagram of each step.

The something in common of the present embodiment and fourth embodiment, details are not described herein.The present embodiment and fourth embodiment are not It is with place：As shown in figure 21, before the graphical mask layer 6500, the protective layer 6600 is formed.

Specifically, with reference to figure 21, protective film (not shown) is formed on the mask layer 6500；The graphical guarantor Cuticula removes the protective film on mask layer 6500 corresponding to the graph area (not indicating), retains the blocked area and (does not mark Show) corresponding to protective film on mask layer 6500 as protective layer 6600.

In order to realize the normal usage function of the mask plate, after the graphical protective film, in the protective layer 6600 It is formed with the second opening 6700 for exposing mask layer 6500 corresponding to the figure.

With reference to figure 22, the graphical mask layer 6500 (as shown in figure 21), formation graph area I and with the figure Blocked area II adjacent shape area I forms at least one through-hole through the mask layer 6500 in the graph area I 6100, and it is graphical after remaining mask layer 6500 as mask pattern layer 6000.

In the present embodiment, to forming the processing step of the protective layer 6600 and the graphical mask layer 6500 Specific descriptions, can refer to the corresponding description in first embodiment.

With continued reference to Figure 22 the metal film of 6100 bottom of the through-hole is etched after forming the mask pattern layer 6000 6250 (as shown in figure 21) retain the metal film 6250 between the mask pattern layer 6000 and the sacrificial layer 5500 as gold Belong to layer 6200.

In the present embodiment, after forming the metal layer 6200, subsequent step further includes：Etch the second of the substrate 5000 Surface (does not indicate), is formed in the substrate 5000 through the substrate 5000 and exposes multiple the first of the graph area I Opening, and every one first opening is corresponding with the graph area I；It is to cover with the substrate 5000 after forming first opening Film removes the sacrificial layer 5500 of the graph area I, and first opening, the opening of through-hole 6100 and second 6700 is made to be mutually communicated.

It should be noted that the specific descriptions of production method described in the present embodiment, in combination with reference to first embodiment and Corresponding description in fourth embodiment, details are not described herein for the present embodiment.

The something in common of the present embodiment and the 5th embodiment, details are not described herein.The present embodiment and the 5th embodiment are not It is with place：As shown in figure 27, the metal layer 820 covers the mask pattern layer 800 towards 700 side of the substrate The surface of surface and the mask pattern layer 800 backwards to 700 side of the substrate.

By making the metal layer 820 cover two opposite surfaces of the mask pattern layer 800, so as to significantly carry The mechanical strength of the high mask pattern layer 800；Moreover, the metal layer 820 can be avoided to occupy 810 space of the through-hole Problem can accordingly reduce the influence to evaporation process and quality of forming film.

Specifically, with reference to figure 23, the first metal film 825 is formed on the sacrificial layer 750；In first metal film Mask layer 850 is formed on 825；The second metal film 835 is formed on the mask layer 850.

The material of first metal film 825 can be in Ni, Ag, Au, Cu, Pt, Cr, Mo, Ti, Ta, Sn, W and Al One or more, the material of second metal film 835 can be in Ni, Ag, Au, Cu, Pt, Cr, Mo, Ti, Ta, Sn, W and Al It is one or more.In the present embodiment, in order to improve processing compatibility, reduction forms the technology difficulty of the metal layer, described The material identical of the material of second metal film 835 and first metal film 825.

It with continued reference to Figure 23, and combines with reference to figure 24, forms 865 (such as Figure 23 of protective film on second metal film 835 It is shown)；The graphical protective film 865, forms protective layer 860 (as shown in figure 24).

Subsequent step includes the graphical mask layer 850, forms graph area and adjacent with the graph area Blocked area forms at least one through-hole through the mask layer 850, therefore the graphical protection in the graph area In the step of film 865, the protective film 165 on the second metal film 835 corresponding to the graph area is removed, retains the blocked area institute Protective film 865 on corresponding second metal film 835 is as the protective layer 860.

Correspondingly, in order to realize the normal usage function of formed mask plate, it is formed in the protective layer 860 and exposes institute State the second opening (not indicating) of mask layer 850 corresponding to graph area.

With reference to figure 25, after forming the protective layer 860, second metal film 835, exposed portion mask layer are etched 850。

Specifically, after etching second metal film 835, remaining second metal film 835 exposes area corresponding to the through-hole The mask layer 850 in domain.

With reference to figure 26, after etching second metal film 835, the graphical mask layer 850 (as shown in figure 25), The graph area I and blocked area II adjacent with the graph area I is formed, is formed in the graph area I at least one through described The through-hole 810 of mask layer 850, and it is graphical after remaining mask layer 850 as mask pattern layer 800.

In the present embodiment, after etching second metal film 835, remaining second metal film 835 exposes 810 institute of the through-hole The mask layer 850 of corresponding region, therefore remaining second metal film 835 can cover the mask pattern layer 800 backwards to institute State the surface of 700 side of substrate.

With reference to figure 27, after forming the mask pattern layer 800, the first metal film 825 of 810 bottom of the through-hole is etched, The first metal film of residue 825 and remaining second metal film 835 after etching are used as metal layer 820.

In the present embodiment, after the first metal film 825 for etching 810 bottom of the through-hole, the through-hole 810 exposes described sacrificial Domestic animal layer 750, therefore subsequently formed through the substrate 700 in the substrate 700 and expose the graph area I sacrificial layers 750 Multiple first openings after, can make to be formed in the substrate 700 by way of removing the graph area I sacrificial layers 750 First opening with the through-hole 810 and second be open connect, to make the filmogen of the evaporation source pass sequentially through First opening, the opening vapor deposition of through-hole 810 and second are in the face to be deposited, to realize the normal use work(of the mask plate Energy.

Moreover, after etching the first metal film 825 of 810 bottom of the through-hole, remaining second metal film 835 can cover institute Surface of the mask pattern layer 800 towards 700 side of the substrate is stated, to make the metal layer 820 cover the mask pattern 800 two opposite surface of layer.

To the specific descriptions of production method described in the present embodiment, in combination with reference in first embodiment and the 5th embodiment Corresponding description, details are not described herein for the present embodiment.

Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims

1. a kind of mask plate, which is characterized in that including：

Substrate, the substrate include first surface and the second surface opposite with the first surface, are had in the substrate Through multiple openings of the substrate, the substrate can be patterned using semiconductor etching process；

Positioned at the mask pattern layer of the first surface, the mask pattern layer includes adjacent graph area and blocked area, described Graph area has at least one through-hole through the mask pattern layer, wherein the opening exposes the graph area, and each Graph area is corresponding with the opening；

Sacrificial layer, between the substrate and the mask pattern layer.

2. mask plate as described in claim 1, which is characterized in that the mask plate further includes protective layer, is located at the mask Graph layer is on the blocked area surface of the one side of substrate.

3. mask plate as described in claim 1, which is characterized in that the mask pattern layer includes towards the first surface Third surface and the 4th surface with the third surface opposite；

The mask plate further includes metal layer, and the metal layer covers the side wall of the 4th surface and the through-hole；Alternatively, The metal layer covers the third surface；Alternatively, the metal layer covers the third surface and the 4th surface.

4. mask plate as described in claim 1, which is characterized in that the material of the mask pattern layer be silicon nitride, silica, Silicon oxynitride, carbonitride of silicium, polysilicon or aluminium.

5. mask plate as described in claim 1, which is characterized in that the substrate be silicon substrate, germanium substrate, silicon-Germanium substrate, Silicon carbide substrates, gallium arsenide substrate, gallium indium substrate, the germanium substrate on silicon substrate or insulator on insulator.

6. mask plate as claimed in claim 3, which is characterized in that the through-hole is circular through hole, is located at the through-hole side wall On metal layer thickness be less than the through-hole radius.

7. mask plate as described in claim 1, which is characterized in that the depth of the through-hole is 2 μm to 10 μm.

8. mask plate as claimed in claim 2, which is characterized in that the thickness of the protective layer is 2 μm to 10 μm.

9. mask plate as described in claim 1, which is characterized in that the thickness of the sacrificial layer is 2 μm to 10 μm.

10. a kind of production method of mask plate, which is characterized in that including：

Substrate is provided, the substrate includes first surface and the second surface opposite with the first surface；

Sacrificial layer is formed on the first surface；

Mask layer is formed on the sacrificial layer；

The graphical mask layer, forms graph area and the blocked area adjacent with the graph area, in the graph area Form at least one through-hole through the mask layer, and it is graphical after remaining mask layer as mask pattern Layer；

After forming the mask pattern layer, the second surface of the substrate is etched, is formed in the substrate and runs through the substrate And expose multiple openings of the graph area, and each opening is corresponding with the graph area；

After forming the opening, using the substrate as mask, the sacrificial layer of the graph area is removed.

11. the production method of mask plate as claimed in claim 10, which is characterized in that form mask material on the sacrificial layer Before the bed of material, metal film is formed on the sacrificial layer；

After forming the mask pattern layer, before the second surface for etching the substrate, the metal film of the via bottoms is etched, Retain the metal film between the mask pattern layer and the sacrificial layer as metal layer；

Alternatively,

After forming the mask pattern layer, before the second surface for etching the substrate, at the top of the mask pattern layer, described Metal film is formed on through-hole side wall and bottom；The metal film for etching the via bottoms retains at the top of the mask pattern layer and logical The metal film of hole side wall is as metal layer；

Alternatively,

After forming the sacrificial layer, is formed before mask layer on the sacrificial layer, first is formed on the sacrificial layer Metal film；

After forming mask layer on the sacrificial layer, formed before the mask pattern layer, on the mask layer Form the second metal film；Second metal film is etched, the mask layer in region corresponding to the through-hole is exposed；

After forming the mask pattern layer, before the second surface for etching the substrate, the first gold medal of the via bottoms is etched Belong to film, the first metal film of residue and remaining second metal film after etching are as metal layer.

12. the production method of mask plate as claimed in claim 10, which is characterized in that after forming the mask pattern layer, carve Before the second surface for losing the substrate, further include：Filled layer is formed in the through-hole, is covered with described at the top of the filled layer It is flushed at the top of film pattern layer；

Form the protective film for covering the mask pattern layer and filled layer；

The graphical protective film, removes the protective film on the graph area mask pattern layer and filled layer, is blocked described in reservation Protective film on area's mask pattern floor is as protective layer.

13. the production method of mask plate as claimed in claim 10, which is characterized in that form mask material on the sacrificial layer After the bed of material, before the graphical mask layer, further include：Protective film is formed on the mask layer；

The graphical protective film, removes the protective film on the graph area mask layer, retains the blocked area mask material Protective film on the bed of material is as protective layer.

14. the production method of mask plate as claimed in claim 10, which is characterized in that the material of the mask pattern layer is nitrogen SiClx, silica, silicon oxynitride, carbonitride of silicium, polysilicon or aluminium.

15. the production method of mask plate as claimed in claim 11, which is characterized in that the material of the metal layer be Ni, Ag, It is one or more in Au, Cu, Pt, Cr, Mo, Ti, Ta, Sn, W and Al.

16. the production method of mask plate as described in claim 12 or 13, which is characterized in that the material of the protective layer is nitrogen SiClx, silica, silicon oxynitride, carbonitride of silicium, polysilicon or aluminium.

17. the production method of mask plate as claimed in claim 10, which is characterized in that the material of the sacrificial layer is oxidation Silicon, silicon nitride, amorphous carbon or germanium.

18. the production method of the mask plate as described in claim 10 or 17, which is characterized in that remove the sacrifice of the graph area The technique of layer is wet-etching technology or cineration technics.

19. the production method of mask plate as claimed in claim 10, which is characterized in that the substrate be silicon substrate, germanium substrate, Silicon-Germanium substrate, silicon carbide substrates, gallium arsenide substrate, gallium indium substrate, the germanium lining on silicon substrate or insulator on insulator Bottom.