CN108615825B - Organic light-emitting display panel and manufacturing method thereof - Google Patents
Organic light-emitting display panel and manufacturing method thereof Download PDFInfo
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- CN108615825B CN108615825B CN201810385040.0A CN201810385040A CN108615825B CN 108615825 B CN108615825 B CN 108615825B CN 201810385040 A CN201810385040 A CN 201810385040A CN 108615825 B CN108615825 B CN 108615825B
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- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K50/824—Cathodes combined with auxiliary electrodes
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Abstract
The invention discloses an organic light-emitting display panel and a manufacturing method thereof, which aim to solve the problems that in the prior art, when the resistance is reduced through an auxiliary cathode, the manufacturing time is longer, the large size of the panel cannot be realized, and the display panel is easy to be defective. The embodiment of the invention provides a manufacturing method of an organic light-emitting display panel, which comprises the following steps: sequentially forming a light emitting layer and a cathode layer on the substrate; forming a conductive etch stop layer over the cathode layer; forming a first packaging layer on the etching barrier layer; forming a plurality of etching barrier layer through holes exposing the first packaging layer through an etching process; forming an auxiliary cathode layer over the first encapsulation layer, wherein the auxiliary cathode layer is connected to the cathode layer at the via hole through the etch stop layer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an organic light-emitting display panel and a manufacturing method thereof.
Background
The cathode material of an Organic Light-Emitting display panel (OLED) has a certain resistance, and when the size of the OLED panel is large, the resistance of the OLED cathode material itself may cause a voltage drop, resulting in a decrease in the display brightness of the panel. To solve this problem, it is necessary to reduce the resistance value of the cathode material. In the prior art, the resistance value of the cathode is generally reduced by adopting an auxiliary cathode.
Fig. 1 and fig. 2 are schematic structural diagrams of an organic light emitting display panel in the prior art, wherein fig. 2 is a schematic cross-sectional diagram of fig. 1 at a via 070. In the prior art, when the auxiliary cathode 07 is manufactured (specifically, the auxiliary cathode 07 may be formed by crossing a first electrode 071 positioned in a gap between adjacent rows of pixels 03 and a second electrode 072 positioned in a gap between adjacent columns of pixels 03), the auxiliary cathode 07 is generally manufactured when the film layer of the backplane is manufactured, for example, the auxiliary cathode 07 is manufactured under the pixel defining layer 02, that is, the grid-shaped auxiliary cathode 07 is formed on the backplane, then the pixel defining layer 02 is formed on the auxiliary cathode 07, and then the organic light emitting layer 03 and the cathode layer 04 are formed.
When the cathode layer 04 and the auxiliary cathode 07 are conducted, a laser process is adopted to remove the local organic light emitting layer 03, so that the cathode layer 04 and the grid-shaped auxiliary cathode 07 are conducted at nodes of the grid. However, the method for conducting the cathode layer 04 and the auxiliary cathode 07 needs to conduct through laser holes by holes, which has a long manufacturing time and cannot reduce the resistance of the cathode for a large-sized display panel, and when the cathode layer 04 and the auxiliary cathode 07 are conducted through the method, particles are formed, which affects the manufacturing yield of the organic light-emitting display panel.
Disclosure of Invention
The invention provides an organic light-emitting display panel and a manufacturing method thereof, which aim to solve the problems that the manufacturing time is long, the large size of the panel cannot be realized and the display panel is easy to be poor when the resistance is reduced by an auxiliary cathode in the prior art.
The embodiment of the invention provides a manufacturing method of an organic light-emitting display panel, which comprises the following steps:
sequentially forming a light emitting layer and a cathode layer on the substrate;
forming a conductive etch stop layer over the cathode layer;
forming a first packaging layer on the etching barrier layer;
forming a plurality of through holes exposing the etching barrier layer on the first packaging layer through an etching process;
forming an auxiliary cathode layer over the first encapsulation layer, wherein the auxiliary cathode layer is connected to the cathode layer at the via hole through the etch stop layer.
Optionally, the forming of the first encapsulation layer on the etching barrier layer specifically includes: forming a first inorganic encapsulation layer over the etch stop layer.
Optionally, the forming a first inorganic encapsulation layer on the etching barrier layer specifically includes: and forming a silicon nitride layer on the etching barrier layer.
Optionally, after forming an auxiliary cathode layer on the first encapsulation layer, the manufacturing method further includes:
forming a second organic encapsulation layer over the auxiliary cathode layer;
a third inorganic encapsulation layer is formed over the second organic encapsulation layer.
Optionally, the forming of the conductive etching blocking layer on the cathode layer specifically includes: and forming a conductive etching barrier layer on the cathode layer by an evaporation process.
Optionally, before forming the first encapsulation layer on the etching barrier layer, the manufacturing method further includes: and forming a light extraction layer on the etching barrier layer.
An embodiment of the present invention further provides an organic light emitting display panel, including:
a light emitting layer and a cathode layer disposed over the substrate;
a conductive etch stop layer disposed over the cathode layer;
the first packaging layer is arranged above the etching barrier layer, and is provided with a plurality of through holes for exposing the etching barrier layer;
an auxiliary cathode layer disposed over the first encapsulation layer, wherein the auxiliary cathode layer is connected to the cathode layer at the via hole through the etch stop layer.
Optionally, the first encapsulation layer is made of silicon nitride.
Optionally, a second organic encapsulation layer is further disposed on the auxiliary cathode layer, and a third inorganic encapsulation layer is further disposed on the second organic encapsulation layer.
Optionally, the material of the etching barrier layer is conductive metal or conductive organic matter.
The embodiment of the invention has the following beneficial effects: the method for manufacturing the organic light-emitting display panel provided by the embodiment of the invention comprises the following steps: forming a conductive etch stop layer over the cathode layer; forming a first packaging layer on the etching barrier layer; forming a plurality of etching barrier layer through holes exposing the first packaging layer through an etching process; form supplementary cathode layer on the first encapsulation layer, wherein, supplementary cathode layer is in through hole department passes through the sculpture barrier layer with the cathode layer is connected, namely, through forming supplementary cathode layer in the formation encapsulation stage, with supplementary cathode layer preparation on first encapsulation layer, the rethread carries out the sculpture to first encapsulation layer and forms the via hole that switches on with the cathode layer, when the via hole of a plurality of connections of needs preparation, can form through disposable sculpture, and then can avoid prior art when switching on supplementary cathode and negative pole, need make the connecting hole one by one through the laser, and then can shorten display panel's preparation time, also can avoid adopting when laser forms the connecting hole, because the particulate matter that produces makes display panel produce bad problem easily. Meanwhile, in the embodiment of the invention, the conductive etching barrier layer is formed on the cathode layer, and the cathode layer is generally thin and is a material which is easy to be oxidized, and the problem that the cathode layer is possibly damaged and oxidized when the first packaging layer is etched to form the through hole can be avoided due to the arrangement of the etching barrier layer.
Drawings
Fig. 1 is a schematic top view illustrating an organic light emitting display panel in the prior art;
fig. 2 is a schematic cross-sectional structure diagram of an organic light emitting display panel at a via hole in the prior art;
fig. 3 is a schematic view illustrating a manufacturing process of an organic light emitting display panel according to an embodiment of the present invention;
fig. 4 is a schematic top view illustrating an organic light emitting display panel according to an embodiment of the present invention;
fig. 5 is a schematic cross-sectional structure diagram of an organic light emitting display panel at a via hole according to an embodiment of the present invention;
fig. 6 is a schematic view illustrating a manufacturing process of an organic light emitting display panel according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a display panel with a completed cathode layer according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a display panel with an etched barrier layer according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a display panel with a completed first packaging layer according to an embodiment of the invention;
FIG. 10 is a schematic structural diagram of a display panel with completed vias according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a display panel with completed auxiliary cathode layers according to an embodiment of the present invention;
FIG. 12 is a schematic structural diagram of a display panel with a completed third inorganic encapsulation layer according to an embodiment of the present invention;
fig. 13 is a schematic view illustrating a current flow direction when a cathode is powered according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present invention clear and concise, a detailed description of known functions and known components of the invention have been omitted.
Referring to fig. 3, an embodiment of the present invention provides a method for manufacturing an organic light emitting display panel, including:
step S101 is to sequentially form a light emitting layer and a cathode layer on a substrate. Specifically, before the light-emitting layer is formed, a pixel defining layer and an anode layer may be further included over the substrate.
And S102, forming a conductive etching barrier layer on the cathode layer.
In a specific implementation, a conductive etch stop layer may be formed over the cathode layer by an evaporation process. The manufacturing of the cathode layer is generally manufactured through an evaporation process, and then the etching barrier layer is formed through the evaporation process, so that the processes are consistent, the manufacturing time of the organic light-emitting display panel can be shortened, the patterned etching barrier layer can be formed through the mask specifically, the pattern of the etching barrier layer can correspond to the pattern of the through hole, namely, the etching barrier layer is formed in the area where the through hole is to be formed.
If the organic display panel is further provided with the light extraction layer on the cathode layer, the light extraction layer can be formed on the cathode layer firstly, then the etching barrier layer is formed, and when the via hole is formed in the subsequent etching, the light extraction layer at the via hole is correspondingly removed, and the etching barrier layer is etched.
Step S103, forming a first packaging layer on the etching barrier layer.
In specific implementation, regarding step S103, forming a first encapsulation layer on the etching stop layer specifically includes: a first inorganic encapsulation layer is formed over the etch stop layer. Optionally, forming a first inorganic encapsulation layer on the etching barrier layer specifically includes: a silicon nitride layer is formed over the etch stop layer. In the embodiment of the invention, the first packaging layer is the silicon nitride layer, which is beneficial to forming the through hole on the packaging layer.
And step S104, forming a plurality of exposed etching barrier layer through holes in the first packaging layer through an etching process.
In specific implementation, a plurality of exposed etching barrier layer through holes may be formed in the first packaging layer through a wet etching process.
As shown in fig. 4 and 5, since the pattern of the auxiliary cathode layer 7 is a generally grid-like pattern, that is, the first electrode 71 located in the gap between the adjacent pixel 3 rows and the second electrode 72 located in the gap between the adjacent pixel 3 columns intersect to form a node at the intersection, and when conducting with the cathode layer 4, the node is usually conducted with the cathode layer 4, and therefore, when the first encapsulation layer 6 forms the via hole, the via hole 70 may be formed in a region of the first encapsulation layer 6 corresponding to the node of the auxiliary cathode 7. Specifically, the via 70 may be provided at a position corresponding to each node.
And S105, forming an auxiliary cathode layer on the first packaging layer, wherein the auxiliary cathode layer is connected with the cathode layer at the through hole through the etching barrier layer.
In specific implementation, referring to fig. 6, after forming the auxiliary cathode layer on the first encapsulation layer, the manufacturing method further includes:
step S106, forming a second organic encapsulation layer on the auxiliary cathode layer.
Step S107, forming a third inorganic encapsulation layer on the second organic encapsulation layer.
In order to more clearly understand the method for manufacturing the organic light emitting display panel according to the embodiment of the present invention, the following description is made in detail with reference to fig. 7 to 12.
Step one, forming the pixel defining layer 2, the light emitting layer 3 and the cathode layer 4 by evaporation process on the substrate 1, as shown in fig. 7.
Step two, forming an etch stop layer 5 on top of the cathode layer 4, as shown in fig. 8.
And thirdly, forming a first packaging layer 6, which may be a silicon nitride layer, on the etching barrier layer 5, as shown in fig. 9.
And step four, forming a plurality of through holes exposing the etching barrier layer 5 on the first packaging layer 6 through an etching process, as shown in fig. 10.
And step five, forming a patterned auxiliary cathode layer 7 on the first packaging layer 6, wherein the auxiliary cathode layer 7 is connected with the cathode layer 4 at the via hole through the etching barrier layer 5, as shown in fig. 11.
Step six, forming a second organic encapsulation layer 8 on top of the auxiliary cathode layer 7, and forming a third inorganic encapsulation layer 9 on top of the second organic encapsulation layer 8, see fig. 12.
Referring to fig. 12, based on the same inventive concept, an embodiment of the present invention further provides an organic light emitting display panel, including: a light emitting layer 3 and a cathode layer 4 sequentially provided on the substrate 1; a conductive etch stop layer 5 disposed over the cathode layer 4; a first encapsulation layer 6 disposed over the etch stop layer 5, wherein the first encapsulation layer 6 has a plurality of via holes exposing the etch stop layer 5; an auxiliary cathode layer 7 arranged on top of the first encapsulation layer 6, wherein the auxiliary cathode layer 7 is connected to the cathode layer 4 at the via hole by the etch stop layer 5.
Referring to fig. 13, the embodiment of the present invention provides a schematic current flow diagram when the cathode is powered, and the current is supplied to the cathode at a node through the auxiliary cathode 7 by the driving back plate at the trace 11 on the side of the frame, where the arrow indicates the current flow direction.
In particular, the organic light emitting display panel provided by the embodiment of the invention may be a top emission AMILED. The material of the auxiliary cathode layer 7 may be Ti/Al/TiO.
In specific implementation, the cathode layer 4 may be Ag/Mg, and the thickness is 5 to 15 nm. The first package layer 6 is made of silicon nitride.
In specific implementation, a second organic encapsulation layer 8 is further disposed on the auxiliary cathode layer 7, and a third inorganic encapsulation layer 9 is further disposed on the second organic encapsulation layer 8.
Optionally, the material of the etching blocking layer 5 is conductive metal or conductive organic matter. The specific metal may be metal or alloy such as Al, Ag/Mg, etc., and the specific conductive organic substance may be an N + doped organic substance.
The embodiment of the invention has the following beneficial effects: the method for manufacturing the organic light-emitting display panel provided by the embodiment of the invention comprises the following steps: forming a conductive etch stop layer over the cathode layer; forming a first packaging layer on the etching barrier layer; forming a plurality of exposed etching barrier layer through holes in the first packaging layer through an etching process; form supplementary cathode layer on first encapsulation layer, wherein, supplementary cathode layer is connected with the cathode layer through the sculpture barrier layer in via hole department, namely, through forming supplementary cathode layer in the encapsulation stage, make supplementary cathode layer on first encapsulation layer, the rethread carries out the sculpture to first encapsulation layer and forms the via hole that switches on with the cathode layer, when the via hole of a plurality of connections of needs preparation, can once only form through the sculpture, and then can avoid prior art when switching on supplementary cathode and cathode, need make the connecting hole one by one through the laser, and then can shorten display panel's preparation time, also can avoid adopting when laser forms the connecting hole, because the particulate matter that produces makes display panel produce bad problem easily. Meanwhile, in the embodiment of the invention, the conductive etching barrier layer is formed on the cathode layer, and the cathode layer is generally thin and is a material which is easy to be oxidized, and the problem that the cathode layer is possibly damaged and oxidized when the first packaging layer is etched to form the through hole can be avoided due to the arrangement of the etching barrier layer.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A method for manufacturing an organic light emitting display panel includes:
sequentially forming a light emitting layer and a cathode layer on a substrate;
forming a conductive etch stop layer over the cathode layer;
forming a first packaging layer on the etching barrier layer;
forming a plurality of through holes exposing the etching barrier layer on the first packaging layer through an etching process;
forming an auxiliary cathode layer over the first encapsulation layer, wherein the auxiliary cathode layer is connected to the cathode layer at the via hole through the etch stop layer.
2. The method according to claim 1, wherein the forming of the first encapsulation layer over the etch stop layer specifically comprises: forming a first inorganic encapsulation layer over the etch stop layer.
3. The method of claim 2, wherein forming the first inorganic encapsulation layer over the etch stop layer specifically comprises: and forming a silicon nitride layer on the etching barrier layer.
4. The fabrication method of claim 2, wherein after forming an auxiliary cathode layer over the first encapsulation layer, the fabrication method further comprises:
forming a second organic encapsulation layer over the auxiliary cathode layer;
a third inorganic encapsulation layer is formed over the second organic encapsulation layer.
5. The method of claim 1, wherein forming a conductive etch stop layer over the cathode layer comprises: and forming a conductive etching barrier layer on the cathode layer by an evaporation process.
6. The method of manufacturing of claim 1, wherein prior to forming the first encapsulation layer over the etch stop layer, the method of manufacturing further comprises: and forming a light extraction layer on the etching barrier layer.
7. An organic light emitting display panel, comprising:
a light emitting layer and a cathode layer sequentially disposed on the substrate;
a conductive etch stop layer disposed over the cathode layer;
a first encapsulation layer disposed over the etch stop layer, wherein the first encapsulation layer has a plurality of vias exposing the etch stop layer;
an auxiliary cathode layer disposed over the first encapsulation layer, wherein the auxiliary cathode layer is connected to the cathode layer at the via hole through the etch stop layer.
8. The organic light-emitting display panel according to claim 7, wherein the first encapsulation layer is made of silicon nitride.
9. The organic light emitting display panel of claim 8, wherein a second organic encapsulation layer is further disposed over the auxiliary cathode layer, and a third inorganic encapsulation layer is further disposed over the second organic encapsulation layer.
10. The organic light-emitting display panel according to claim 7, wherein the material of the etching barrier layer is a conductive metal or a conductive organic substance.
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CN109616505A (en) * | 2018-12-18 | 2019-04-12 | 深圳市华星光电技术有限公司 | OLED display and preparation method thereof |
CN110112190A (en) * | 2019-04-29 | 2019-08-09 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting display panel |
CN114843420A (en) * | 2022-04-20 | 2022-08-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method of display panel and display device |
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