CN108611603A - A kind of preparation method of metallized multilayer film - Google Patents
A kind of preparation method of metallized multilayer film Download PDFInfo
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- CN108611603A CN108611603A CN201810437232.1A CN201810437232A CN108611603A CN 108611603 A CN108611603 A CN 108611603A CN 201810437232 A CN201810437232 A CN 201810437232A CN 108611603 A CN108611603 A CN 108611603A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 229910052786 argon Inorganic materials 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 19
- 239000002356 single layer Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 238000004501 airglow Methods 0.000 claims description 3
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 3
- -1 power 30W Substances 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 81
- 239000010949 copper Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of preparation methods of metallized multilayer film, first clean monocrystalline silicon piece by acetone and EtOH Sonicate successively, are put into after drying on superhigh vacuum magnetron sputtering equipment chip bench, prepare plated film；Using direct current magnetron sputtering process, metal targets are placed on vacuum chamber target platform, are 1.0 × 10 in background vacuum‑5~2.5 × 10‑5Under conditions of Pa, it is passed through argon gas, adjusting vacuum degree is 5~7Pa, carries out pre-sputtering；Vacuum degree is adjusted to 0.5~1Pa, carries out plated film, first plates Cu layers, power is 65~80W, and then Ag layers, power is 30~50W, and Ag films and the deposition rate of Cu films are 0.2nm/s, and alternating deposit, obtains Cu/Ag multilayer films successively.The present invention is easy to operate, and condition is easily controllable, reproducible, and multilayer film stratum boundary obtained is clear, thickness is uniform, surface is smooth, has excellent electricity and mechanical property, is suitable for microelectronic industry.
Description
Technical field
The present invention relates to a kind of preparation methods of metallized multilayer film, belong to field of material technology.
Background technology
It is more and more in electronics and semiconductor technology to use thin-film material, such as metal, alloy, semiconductor and insulating materials
Film is used to make magnetic element in conductor, memory storage, resistance, electrode for capacitors, ray detector, transistor and various
Optical cladding layers.In aerospace industry, film is used as temperature control coating of spacecraft etc..
Metallized multilayer film be formed by two or more metal alternating deposit, and ultimately form interlayer circle it is apparent and
The periodically variable thin-film material of component, alternate cycle number indicate that different metal Film Thickness Ratio is known as modulation ratio R with Λ.With collection
Enter sub-micron and nanoscale stage at circuit technology, the requirement to the comprehensive performance of thin-film material is higher and higher, for example, micro-
The interconnecting material of Mechatronic Systems generally requires have high intensity and high conductivity, but usually, it is high-strength in thin-film material
Degree is conflicting with high conductivity.Currently the research about Cu/Ag multilayer films is concentrated mainly on above strengthening mechanism, and more
The raising of intensity depends on the blocking to dislocation such as interface and crystal boundary in tunic, and the method for traditional raising metal strength, which also has, to be added
Work hardening, solution strengthening and crystal grain refinement etc., and these machining deformations make crystal grain reach nanoscale, and interface and crystal boundary are to electricity
The scattering process of son is then to make the raised principal element of resistivity, and a large amount of crystal boundaries, defect or the are will produce in these process
Secondary phase particle can destroy the symmetry of lattice in this way, cause the scattering of electronics, reduce the conductivity of material, cannot meet microcomputer
The demand of interconnecting material in electric system.
Therefore, high intensity how is prepared, the metallized multilayer film of high conductivity is current problem anxious to be resolved.
Invention content
It is an object of the invention to solve the deficiencies in the prior art, a kind of preparation method of metallized multilayer film, the work are provided
Skill is easy to operate, and condition is easily controllable, reproducible, and multilayer film stratum boundary obtained is clear, thickness is uniform, surface is smooth,
With excellent electricity and mechanical property.
Technical solution
For the present inventor the study found that for nanometer metallic multilayers, electron scattering mechanism may sensitively depend on film
Interior a large amount of crystal boundaries, heterogeneous interface and its synergistic effect, in addition the distinctive structure parameter of multilayer film can also increase the variation of micro-structure
Property, cause the electron transport behavior of metallized multilayer film to become front yard close greatly with bulk metal material, therefore, the tune of metal single layer film
Period processed and modulation ratio all have a significant impact to the mechanical property and electric property of metallized multilayer film.The present inventor selects metal
Cu, Ag metal as research object, by alternating deposit and the modulation nano metal that ultimately forms notable coherent boundary feature it is more
Tunic prepares modulation nanometer metallic multilayers using magnetically controlled DC sputtering technology, by controlling technological parameter, with big
The epitaxial interface and twin-plane boundary of amount, epitaxial interface and twin-plane boundary are different from incoherent interface, smaller to the scattering of electronics,
Therefore there is good electric conductivity, epitaxial interface and twin-plane boundary can equally hinder the movement of dislocation, thus with higher
Hardness.Concrete scheme is as follows：
A kind of preparation method of metallized multilayer film, includes the following steps：
(1) the monocrystalline silicon piece substrate that thickness is 2mm is cleaned by acetone and EtOH Sonicate successively, after drying, is put into superelevation
On vacuum magnetic-control sputtering equipment chip bench, prepare plated film；
(2) use direct current magnetron sputtering process, metal targets are placed on vacuum chamber target platform, background vacuum be 1.0 ×
10-5~2.5 × 10-5Under conditions of Pa, it is passed through argon gas, adjusting vacuum degree in vacuum chamber is 5.0~7.0Pa, then starts airglow,
15~30min of pre-sputtering；
(3) after pre-sputtering, vacuum degree in vacuum chamber is adjusted to 0.5~1Pa, carries out plated film, first plate Cu layer, power for 65~
80W, then Ag layers, power is 30~50W, and Ag films and the deposition rate of Cu films are 0.2~0.3nm/s, are deposited by controlling
Time ensures that Ag films are identical as Cu film thicknesses, the thickness of single layer Ag films or Cu films is to control the thickness of single layer Ag films and Cu films
2~80nm obtains Cu/Ag multilayer films according to Ag layers of this sequence alternating deposit successively is plated after first plating Cu layers.
Further, in step (1), monocrystalline silicon piece substrate cleans 20~30min by acetone and EtOH Sonicate successively.
Further, in step (2), the metal targets are the Ag of the Cu and 99.999wt% of purity 99.999wt%.
Further, in step (3), the thickness of single layer Ag films or Cu films is 6nm.
Further, in step (3), the thickness of the Cu/Ag multilayer films is 1000nm.
Further, in step (3), when plating Cu layers, power 80W, when plating Ag layers, power 30W, Ag film is heavy with Cu films
Product rate is 0.2nm/s.
Beneficial effects of the present invention：Compared with the preparation method of traditional composite material by multilayer film, the present invention has as follows
Feature：
(1) maximum intensity of Cu/Ag nano-multilayer films produced by the present invention is 4.16GPa, and Cu/Ag nano-multilayer films are most
Big conductivity can reach 2.83 × 107S/m is more than the mean intensity 2.87GPa of the copper Ag multilayer film of theoretical calculation and is averaged
Conductivity 1.68 × 107s/m；
(2) Cu/Ag nanometer multilayer film strengths increase with the reduction of thickness in monolayer in the present invention, are in thickness in monolayer
Reach maximum value when 6nm, this is mainly due to twin-plane boundary reinforcings, and intensity to be caused to increase；At the same time, due to a large amount of extensions circle
The growth in face, conductivity are held essentially constant, and continue to reduce thickness in monolayer, and conductivity is gradually increasing, and are 6nm in thickness in monolayer
When, intensity reaches maximum value with conductivity.To solve the problems, such as high intensity and high conductivity, this is conflicting；
(3) present invention is easy to operate, and condition is easily controllable, reproducible, can be used for practical application, also golden to study other
The electricity and mechanical property for belonging to multilayer film provide directive function.
Description of the drawings
Fig. 1 is the electron microscope of the Cu/Ag multilayer films of embodiment 4；
Fig. 2 is the electron diffraction diagram of the Cu/Ag multilayer films of embodiment 4.
Specific implementation mode
The invention will be further described in the following with reference to the drawings and specific embodiments.
Filming equipment：
Using the magnetic control sputtering device of model JGP500A, which installs three Φ 75mm permanent magnetism magnetic control targets, maximum sputtering
Power is 500W；One four station has the sample turntable of revolution function, it can be achieved that three target co-sputterings are tested, and sample can both heat
Also can water cooling, reachable 800 DEG C of maximum temperature, rate of heat addition adjustable extent is suitable for preparing in 10 DEG C/min-50 DEG C/min
A variety of different materials films；Vacuum system is mainly furnished with 2XZ-8 (8L/S) type mechanical pump and the whirlpools FF-200/1200 and falls molecule
Pump, maximum vacuum can reach 6.0 × 10-6Pa, ultra-high vacuum are that accurately controlling for thin film composition provides guarantee.
Material prepares：
Sputtering target material is respectively the Ag and Cu of purity 99.999wt%, and diameter is 75mm；Substrate is monocrystalline silicon piece, thickness
For 2mm.
Embodiment 1
A kind of preparation method of metallized multilayer film, includes the following steps：
(1) the monocrystalline silicon piece substrate that thickness is 2mm is cleaned into 20min by acetone and EtOH Sonicate successively, after drying, be put into
On superhigh vacuum magnetron sputtering equipment chip bench, prepare plated film；
(2) use direct current magnetron sputtering process, metal targets are placed on vacuum chamber target platform, background vacuum be 2.5 ×
10-5Under conditions of Pa, it is passed through argon gas, flow 20sccm, adjusting vacuum degree in vacuum chamber is 5.0Pa, then starts airglow, splashes in advance
Penetrate 20min；
(3) after pre-sputtering, vacuum degree in vacuum chamber is adjusted to 0.8Pa, carries out plated film, first plates Cu layers, power 80W, so
Ag layers afterwards, power 30W, Ag film and the deposition rate of Cu films are 0.2nm/s, by controlling sedimentation time, to control single layer
The thickness of Ag films and Cu films ensures that Ag films are identical with Cu film thicknesses, and the thickness of single layer Ag films or Cu films is 80nm, according to first plating Cu
Ag layers of this sequence alternating deposit successively is plated after layer, obtains Cu/Ag multilayer films, and Cu/Ag thickness of multilayer film is 1000nm.
Embodiment 2
In step (3), the thickness of single layer Ag films or Cu films is 40nm, remaining is same as Example 1.
Embodiment 3
In step (3), the thickness of single layer Ag films or Cu films is 20nm, remaining is same as Example 1.
Embodiment 4
In step (3), the thickness of single layer Ag films or Cu films is 6nm, remaining is same as Example 1.Fig. 1 is embodiment 4
The electron microscope of Cu/Ag multilayer films, Fig. 1 a are whole patterns, and Fig. 1 b and Fig. 1 c are apparent epitaxial interface and twin-plane boundary, and Fig. 2 is
The electron diffraction diagram of Cu/Ag multilayer films.The ratio between thickness of Cu, Ag film layer is essentially 1 it can be seen from Fig. 1 and 2:1, film layer circle
Clearly, thickness is uniform, has a large amount of coherence twin, and substantially without high-angle boundary.
Embodiment 5
In step (3), the thickness of single layer Ag films or Cu films is 2nm, remaining is same as Example 1.
Comparative example 1
Prepare pure Ag films：The monocrystalline silicon piece of 2mm is substrate, only deposits Ag films at room temperature, thickness 1000nm, obtaining thickness is
The Ag films of 1000nm.
Comparative example 2
Prepare pure Cu films：The monocrystalline silicon piece of 2mm is substrate, at room temperature deposited Cu film, thickness 1000nm, and obtaining thickness is
The Cu films of 1000nm.
Performance test：
Hardness is carried out to the Cu/Ag multilayer films of embodiment with the nano-hardness tester that pressure head is diamond Berkovich pressure heads
It measures, the conductivity of Cu/Ag multilayer films is measured using four probe machines, is compared with the Ag films and Cu films of comparative example, test
It the results are shown in Table 1：
The comparison of table 1Ag/Cu multilayer films and pure Cu, Ag film
Remarks：Average value * is the average value obtained according to mixing rule.
As can be seen from Table 1, when the Cu/Ag nano-multilayer films in the present invention, especially monofilm thickness are 6nm, metal
Multilayer film has high conductivity while having high intensity, and stablizes, this is because being formed in Cu/Ag nano-multilayer films big
Area epitaxial interface and coherence twin-plane boundary, big angle number of grain boundaries are drastically reduced, and reduce scattering of the crystal boundary to electronics, keep high
While intensity, high conductivity can also be obtained.
Claims (6)
1. a kind of preparation method of metallized multilayer film, which is characterized in that include the following steps：
(1) the monocrystalline silicon piece substrate that thickness is 2mm is cleaned by acetone and EtOH Sonicate successively, after drying, is put into ultrahigh vacuum
On magnetron sputtering apparatus chip bench, prepare plated film；
(2) direct current magnetron sputtering process is used, metal targets are placed on vacuum chamber target platform, is 1.0 × 10 in background vacuum-5~
2.5×10-5Under conditions of Pa, it is passed through argon gas, adjusting vacuum degree in vacuum chamber is 5.0~7.0Pa, then starts airglow, pre-sputtering
15~30min；
(3) after pre-sputtering, vacuum degree in vacuum chamber being adjusted to 0.5~1Pa, carries out plated film, first plate Cu layers, power is 65~80W,
Then Ag layers, power is 30~50W, and Ag films and the deposition rate of Cu films are 0.2~0.3nm/s, by controlling sedimentation time,
Control the thickness of single layer Ag films and Cu films, ensure that Ag films are identical with Cu film thicknesses, the thickness of single layer Ag films or Cu films for 2~
80nm obtains Cu/Ag multilayer films according to Ag layers of this sequence alternating deposit successively is plated after first plating Cu layers.
2. the preparation method of metallized multilayer film as described in claim 1, which is characterized in that in step (1), monocrystalline silicon piece substrate
20~30min is cleaned by acetone and EtOH Sonicate successively.
3. the preparation method of metallized multilayer film as described in claim 1, which is characterized in that in step (2), the metal targets
For the Ag of the Cu and 99.999wt% of purity 99.999wt%.
4. the preparation method of metallized multilayer film as described in claim 1, which is characterized in that in step (3), single layer Ag films or Cu
The thickness of film is 6nm.
5. the preparation method of metallized multilayer film as described in claim 1, which is characterized in that in step (3), the Cu/Ag is more
The thickness of tunic is 1000nm.
6. such as the preparation method of metallized multilayer film described in any one of claim 1 to 5, which is characterized in that in step (3), plating
At Cu layers, power 80W, when plating Ag layers, power 30W, Ag film and the deposition rate of Cu films are 0.2nm/s.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109881191A (en) * | 2019-03-29 | 2019-06-14 | 上海交通大学 | A kind of preparation method for contact material silver-bearing copper diffusion coating |
| CN110983255A (en) * | 2019-12-19 | 2020-04-10 | 南京工程学院 | A food containing L12Preparation method of Ni-based multilayer film of ordered phase |
| CN111020513A (en) * | 2019-12-30 | 2020-04-17 | 西安理工大学 | Method for improving toughness of nano metal multilayer film |
| CN113718202A (en) * | 2021-09-07 | 2021-11-30 | 曲阜师范大学 | Preparation method and application of graphite alkyne lubricating film |
| CN113913769A (en) * | 2021-10-29 | 2022-01-11 | 南京南智先进光电集成技术研究院有限公司 | Preparation method of nano conductive metal film applicable to multiple substrates |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109881191A (en) * | 2019-03-29 | 2019-06-14 | 上海交通大学 | A kind of preparation method for contact material silver-bearing copper diffusion coating |
| CN110983255A (en) * | 2019-12-19 | 2020-04-10 | 南京工程学院 | A food containing L12Preparation method of Ni-based multilayer film of ordered phase |
| CN110983255B (en) * | 2019-12-19 | 2021-09-21 | 南京工程学院 | A food containing L12Preparation method of Ni-based multilayer film of ordered phase |
| CN111020513A (en) * | 2019-12-30 | 2020-04-17 | 西安理工大学 | Method for improving toughness of nano metal multilayer film |
| CN113718202A (en) * | 2021-09-07 | 2021-11-30 | 曲阜师范大学 | Preparation method and application of graphite alkyne lubricating film |
| CN113718202B (en) * | 2021-09-07 | 2022-07-01 | 曲阜师范大学 | Preparation method and application of graphite alkyne lubricating film |
| CN113913769A (en) * | 2021-10-29 | 2022-01-11 | 南京南智先进光电集成技术研究院有限公司 | Preparation method of nano conductive metal film applicable to multiple substrates |
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