CN108601190A - Height couples the double ring type ion involution antenna of low impurity - Google Patents

Height couples the double ring type ion involution antenna of low impurity Download PDF

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Publication number
CN108601190A
CN108601190A CN201711383084.1A CN201711383084A CN108601190A CN 108601190 A CN108601190 A CN 108601190A CN 201711383084 A CN201711383084 A CN 201711383084A CN 108601190 A CN108601190 A CN 108601190A
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China
Prior art keywords
ring type
antenna
double ring
backboard
type current
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CN201711383084.1A
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杨桦
张新军
秦成明
袁帅
赵燕平
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Hefei Institutes of Physical Science of CAS
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Hefei Institutes of Physical Science of CAS
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Priority to CN201711383084.1A priority Critical patent/CN108601190A/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/02Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

The invention discloses a kind of high double ring type ion involution antennas for coupling low impurity, include in horizontally disposed backboard and four double ring type current straps being inclined to set, Faraday shield cover and antenna outline border, antenna outline border is fixedly connected on the front side of backboard, Faraday shield cover is fixedly connected on the front side of antenna outline border, four double ring type current straps are in the front side for being vertically fixedly mounted on backboard respectively, it is distributed in 2 × 2 array-likes, in antenna outline border, and between backboard and Faraday shield cover, four RF power fed-in ports corresponding with four double ring type current straps are respectively equipped on rear side of backboard.The present invention passes through the optimization design to antenna structure and wave spectrum, it can be compared with the coupled impedance for effectively improving ion involution antenna under case of low density case, by more power transmissions to Plasma Center, to improve plasma temperature, and the inclined design of antenna, radiofrequency potential caused by antenna is reduced, and then reduces contaminant problem caused by antenna.

Description

Height couples the double ring type ion involution antenna of low impurity
Technical field
The present invention relates to the ion cyclotron wave heating system radio-frequency power heated for tokamak plasma couplings Technical field, specifically a kind of high double ring type ion involution antenna for coupling low impurity.
Background technology
Ion involution rf wave(ICRF)Heating is that the very effective auxiliary of heating plasma adds in tokamak device One of hot means, ion involution frequency range wave energy enough travel to Plasma Center, and directly effective heating ion.At home High power RF Wave heating is generally used on outer magnetically confined plasma device, plasma temperature can be increased to several keV.The ion cyclotron wave heating system that magnetic confinement tokamak EAST devices in China's are equipped with 12MW is used for heating plasma, Working frequency in 25-70MHz, can continuous high power run more than 100 seconds.However, being found during the experiment due to before antenna Plasma density is relatively low, and the coupling of antenna is not high, and high radiofrequency potential in addition can be inspired before antenna, causes impurity concentration Increase, these be all unfavorable for obtaining high constraint, stable state plasma.The coupling efficiency of ion cyclotron wave is arrived with fast wave cutoff layer Antenna distance and wave spectrum have exponential decay dependence, this distance depends on plasma density and antenna wave spectrum, at present on EAST Plasma density string averag density is in 1-5 × 1019m-3, in addition consider plasma to the absorption efficiency of wave, in EAST from The wave spectrum of son convolution antenna should be in 7-11m-1Between.Experiment and theory show excitation and background in tokamak during antenna operation The consistent electric field of magnetic direction can increase the generation of impurity, calculation shows that by antenna current swath tilt energy vertical with background magnetic field Radiofrequency potential is enough effectively reduced, so as to improve contaminant problem.
Invention content
The object of the present invention is to provide a kind of high double ring type ion involution antennas for coupling low impurity, by antenna structure With the optimization of wave spectrum, to effectively improve the coupling efficiency of antenna, to obtained under limited input power higher temperature etc. Gas ions;The antenna is optimized in the electric field for exciting parallel background magnetic field direction, reduces plasma caused by antenna rf potential The increase of body impurity concentration.
Technical scheme is as follows:
A kind of high double ring type ion involution antenna for coupling low impurity, includes four double ring type current straps, backboard, faraday Shielding case and antenna outline border, it is characterised in that:In being horizontally disposed with, the antenna outline border is fixedly connected on described the backboard The front side of backboard, the Faraday shield cover are fixedly connected on the front side of the antenna outline border, described four double ring type electricity Stream band is in the front side for being vertically fixedly mounted on the backboard respectively, is distributed in 2 × 2 array-likes, and the antenna outline border is located at In, and between the backboard and the Faraday shield cover, described four double ring type current straps, Faraday shield covers It is inclined to set, is respectively equipped on rear side of the backboard and four double ring type current bars in the horizontal direction with antenna outline border With corresponding four RF power fed-in ports.
The height couples the double ring type ion involution antenna of low impurity, it is characterised in that:Four double ring type electric currents Laterally wide band is 120mm, vertical a length of 320mm, between the center of two double ring type current straps in same lateral position Away from for 350mm.
The height couples the double ring type ion involution antenna of low impurity, it is characterised in that:Four double ring type electricity The angle of inclination for flowing band, Faraday shield cover and antenna outline border is consistent with the direction in magnetic field in tokamak.
The height couples the double ring type ion involution antenna of low impurity, it is characterised in that:The front side of the backboard is in place It is respectively fixedly connected with partition board between two double ring type current straps in same lateral position.
The height couples the double ring type ion involution antenna of low impurity, it is characterised in that:Four double ring type electric currents Band, backboard, Faraday shield cover and partition board baseplate material be 316L magnetism-free stainless steels.
The height couples the double ring type ion involution antenna of low impurity, it is characterised in that:Four double ring type electric currents The power of band is respectively by one end feed-in, and other end ground connection, the front side of the backboard is in four double ring type current straps Ground connection at be separately installed with fixing screws.
The height couples the double ring type ion involution antenna of low impurity, it is characterised in that:The antenna outline border is by cutting Face is fixedly connected on the front side of the backboard in the framework of toroidal.
Beneficial effects of the present invention:
1, the present invention can EAST devices it is existing compared with low density plasmas in the case of obtain higher coupled impedance, More ion cyclotron waves can be transferred to Plasma Center area by the spectral range of inventive antenna, obtain it is higher it is equal from Daughter temperature.
2, the radio frequency in parallel background magnetic field direction is reduced while the method have the characteristics that improving the coupled impedance of antenna Potential reduces the ion bombardment tokamak plasma facing material that radiofrequency potential accelerates, to reduce the generation of impurity.
Description of the drawings
Fig. 1 is structure of the invention front view.
Fig. 2 is structure of the invention left view.
Fig. 3 is the structural front view of double ring type current strap 1 in the present invention.
Fig. 4 is the structure left view of double ring type current strap 1 in the present invention.
Fig. 5 is the structural front view of double ring type current strap 2 in the present invention.
Fig. 6 is the structure left view of double ring type current strap 2 in the present invention.
Specific implementation mode
Referring to attached drawing, a kind of high double ring type ion involution antenna for coupling low impurity, includes four double ring type current bars Band 1,2,3,4, backboard 5, Faraday shield cover 6 and antenna outline border 8, in being horizontally disposed with, antenna outline border 8 is fixedly connected on backboard 5 The front side of backboard 5, Faraday shield cover 6 are fixedly connected on the front side of antenna outline border 8, four double ring type current straps 1,2,3,4 It is in the front side for being vertically fixedly mounted on backboard 5 respectively, is distributed in 2 × 2 array-likes, is located in antenna outline border 8, and is located at backboard 5 Between Faraday shield cover 6,6 distance of Faraday shield cover, four double ring type current straps 1,2,3,4 have a certain distance, four Double ring type current strap 1,2,3,4, Faraday shield cover 6 and antenna outline border 8 are inclined to set in the horizontal direction, backboard 5 Rear side is respectively equipped with and four double ring type current straps 1,2,3,4 corresponding four RF power fed-in ports 7, four double ring type electricity Stream band 1,2,3,4 is connected respectively by coaxial feeder to four RF power fed-in ports 7.
In the present invention, laterally wide four double ring type current straps 1,2,3,4 are 120mm, vertical a length of 320mm, in same The center spacing of two double ring type current straps of one lateral position is 350mm.
Four double ring type current straps 1,2,3,4, the angle of inclination of Faraday shield cover 6 and antenna outline border 8 are blocked with support The direction in magnetic field is consistent in mark.
The front side of backboard 5 is fixed respectively between two double ring type current straps for being located in same lateral position to be connected It is connected to partition board, i.e., partition board is respectively set between double ring type current strap 1,3 and double ring type current strap 2,4, by double ring type Current strap 1,3 and double ring type current strap 2,4 barriers are opened, to reduce double ring type current strap 1,3 and double ring type electric current Mutual coupling between band 2,4.
Four double ring type current straps 1,2,3,4, backboard 5, Faraday shield cover 6 and partition board baseplate material be 316L Magnetism-free stainless steel.
The power of four double ring type current straps 1,2,3,4 is respectively by one end feed-in, other end ground connection, wherein double ring type The upper end feed-in power of current strap 1,3, lower end ground connection, the lower end feed-in power of double ring type current strap 2,4, upper end ground connection, The front side of backboard 5 is separately installed with fixing screws at the ground connection of four double ring type current straps 1,2,3,4, i.e., bicyclic by four It is directly connected on backboard 5 at the ground connection of type current strap 1,2,3,4.
Antenna outline border 8 is fixedly connected on the front side of backboard 5 by section in the framework 9 of toroidal.

Claims (7)

1. a kind of high double ring type ion involution antenna for coupling low impurity, includes four double ring type current straps, backboard, farads Shielding case and antenna outline border, it is characterised in that:For the backboard in being horizontally disposed with, the antenna outline border is fixedly connected on institute The front side of backboard is stated, the Faraday shield cover is fixedly connected on the front side of the antenna outline border, described four double ring type Current strap is in the front side for being vertically fixedly mounted on the backboard respectively, is distributed in 2 × 2 array-likes, is located at outside the antenna In frame, and between the backboard and the Faraday shield cover, described four double ring type current straps, Faraday shields Cover and antenna outline border are inclined to set in the horizontal direction, are respectively equipped on rear side of the backboard and four double ring type electric currents The corresponding four RF power fed-in ports of band.
2. the high double ring type ion involution antenna for coupling low impurity according to claim 1, it is characterised in that:Described four Laterally wide double ring type current strap is 120mm, and vertical a length of 320mm is in two double ring type current bars of same lateral position The center spacing of band is 350mm.
3. the high double ring type ion involution antenna for coupling low impurity according to claim 1, it is characterised in that:Described four The angle of inclination of double ring type current strap, Faraday shield cover and antenna outline border with the direction in magnetic field in tokamak one It causes.
4. the high double ring type ion involution antenna for coupling low impurity according to claim 1, it is characterised in that:The backboard Front side be respectively fixedly connected with partition board between two double ring type current straps for being located in same lateral position.
5. the high double ring type ion involution antenna for coupling low impurity according to claim 1 or 4, it is characterised in that:It is described Four double ring type current straps, backboard, Faraday shield cover and partition board baseplate material be 316L magnetism-free stainless steels.
6. the high double ring type ion involution antenna for coupling low impurity according to claim 1, it is characterised in that:Described four The power of double ring type current strap is respectively by one end feed-in, and the other end is grounded, and the front side of the backboard is bicyclic at described four It is separately installed with fixing screws at the ground connection of type current strap.
7. the high double ring type ion involution antenna for coupling low impurity according to claim 1, it is characterised in that:The antenna Outline border is fixedly connected on the front side of the backboard by section in the framework of toroidal.
CN201711383084.1A 2017-12-20 2017-12-20 Height couples the double ring type ion involution antenna of low impurity Pending CN108601190A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110108950A (en) * 2019-04-29 2019-08-09 中国科学院合肥物质科学研究院 Measure the Magnetic probe array of the parallel wave number of lower hybrid wave and wave polarization in plasma
CN111864355A (en) * 2020-07-31 2020-10-30 中国科学院合肥物质科学研究院 Radio frequency wave resonant heating antenna
CN112530605A (en) * 2020-11-16 2021-03-19 中国科学院合肥物质科学研究院 Vertical device supporting mechanism suitable for ultra-high vacuum and strong radiation conditions
CN113411943A (en) * 2021-05-17 2021-09-17 中国科学院合肥物质科学研究院 Current compensation device for reducing heating antenna radio frequency sheath

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110108950A (en) * 2019-04-29 2019-08-09 中国科学院合肥物质科学研究院 Measure the Magnetic probe array of the parallel wave number of lower hybrid wave and wave polarization in plasma
CN110108950B (en) * 2019-04-29 2021-06-22 中国科学院合肥物质科学研究院 Magnetic probe array for measuring low clutter parallel wave number and wave polarization in plasma
CN111864355A (en) * 2020-07-31 2020-10-30 中国科学院合肥物质科学研究院 Radio frequency wave resonant heating antenna
CN111864355B (en) * 2020-07-31 2021-09-24 中国科学院合肥物质科学研究院 Radio frequency wave resonant heating antenna
CN112530605A (en) * 2020-11-16 2021-03-19 中国科学院合肥物质科学研究院 Vertical device supporting mechanism suitable for ultra-high vacuum and strong radiation conditions
CN112530605B (en) * 2020-11-16 2024-02-23 中国科学院合肥物质科学研究院 Vertical device supporting mechanism suitable for ultra-high vacuum and strong radiation conditions
CN113411943A (en) * 2021-05-17 2021-09-17 中国科学院合肥物质科学研究院 Current compensation device for reducing heating antenna radio frequency sheath

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Application publication date: 20180928