CN108593585A - A kind of graphene phasmon gas sensor - Google Patents
A kind of graphene phasmon gas sensor Download PDFInfo
- Publication number
- CN108593585A CN108593585A CN201810644987.9A CN201810644987A CN108593585A CN 108593585 A CN108593585 A CN 108593585A CN 201810644987 A CN201810644987 A CN 201810644987A CN 108593585 A CN108593585 A CN 108593585A
- Authority
- CN
- China
- Prior art keywords
- graphene
- microcavity
- phasmon
- cover board
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002329 infrared spectrum Methods 0.000 claims abstract description 9
- 230000002708 enhancing effect Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 13
- 239000002086 nanomaterial Substances 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 7
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 7
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 7
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910004541 SiN Inorganic materials 0.000 claims description 3
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 claims description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 3
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 51
- 239000010410 layer Substances 0.000 description 46
- 239000000523 sample Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003745 diagnosis Methods 0.000 description 3
- 239000002074 nanoribbon Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 201000010099 disease Diseases 0.000 description 2
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010058467 Lung neoplasm malignant Diseases 0.000 description 1
- 208000001647 Renal Insufficiency Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001684 chronic effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 201000006370 kidney failure Diseases 0.000 description 1
- 201000005202 lung cancer Diseases 0.000 description 1
- 208000020816 lung neoplasm Diseases 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002685 pulmonary effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000241 respiratory effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of graphene phasmon gas sensor, the sensor includes substrate, dielectric layer, graphene layer, microcavity and cover board successively from bottom to top.The sample intake passage and sample output passage being connected to microcavity are wherein respectively set in the cover board, it is gas microcavity above graphene layer of the present invention, graphene phasmon can interact with gas molecule, to obtain the gas infrared spectrum of phasmon enhancing, realize pointing out for gaseous species, the present invention can detect the gas molecule of denier simultaneously, and for phasmon wavelength in middle infrared band (400 3000 wave number of resonant frequency), the sensor is reusable, can integrate.
Description
Technical field
The present invention relates to infrared optics sensory field, gas sensing field and phasmon enhanced spectrum fields, especially relate to
And a kind of gas sensor that graphene phasmon device and microcavity is integrated.
Background technology
Gas sensing can be used for detecting various inflammable, explosive, toxic gases and the gas-phase product prison of biological and chemical reaction
Control has important application in fields such as environment measuring, security protection, chemical industry and medical diagnosis.Such as it can pass through in medical diagnosis
The content of the gases such as NO, isopropanol and ammonia carries out the medical diagnosis on disease of early stage in characteristics of contaminated respiratory droplets gas：With chronic obstructive pulmonary
Contain about 5000ppb NO in the gas of patient's exhalation of disease；Isopropanol content is more than in the gas of patients with lung cancer exhalation
100ppb；The ammonia in gas Gas content of person having renal failure exhalation is more than 3000ppb.Common electric sensor is become based on electric current
Change the content for carrying out probe gas molecule, since curent change is not related to the structure of gas and ingredient, not special
In the case of marker can not Direct Identification gas molecule type.
Infrared spectrum can precisely reflect the information of molecular vibration, be the important means for differentiating material composition and structure.It is red
External spectrum technology has without sample label, to sample nondestructive evil, that speed is fast, instrument popularity rate is high and spectrum picture library is complete etc. is excellent
Point is widely used to the fields such as chemical composition analysis, environmental monitoring, food safety detection, explosive detection and biologic medical.
But infrared spectrum can not direct detection minimum gas molecule.Because mid-infrared light wavelength (10 μm of magnitudes) compares gas
Body molecular dimension (being less than 1nm) big 4 orders of magnitude, the interaction of infrared light and molecule is very weak, so direct detection is micro
Substance.Infrared light wavelength compressional can be more than 100 times by graphene phasmon, greatly increase the intensity of local light, from
And realize direct detection of the infrared spectrum to micro substance.Graphene phasmon has local electric field height in middle infrared band
Enhancing, the advantages such as low intrinsic decaying that can dynamically reconcile have important application in infrared sensing field.
But graphene phasmon is still difficult to use in the detection of gaseous sample at present, main challenge be there has been no
Suitable sensor can combine the micro-nano gas chamber of saturating infrared light and graphene phasmon device.
Invention content
To solve the above-mentioned problems, the present invention provides a kind of graphene phasmon gas sensor, and this structure can be with
Graphene phasmon device is combined with infrared transparent gas microcavity effectively, gaseous sample is obtained by measuring transmitted spectrum
Phasmon enhance infrared spectrum.
Technical scheme of the present invention：A kind of graphene phasmon gas sensor, including cover board and graphene etc. are from sharp
Component,
The wherein described graphene phasmon device includes from bottom to top substrate successively, and dielectric layer, graphene layer is micro-
Chamber,
The wherein described graphene layer both ends are respectively set to metal electrode；
The sample intake passage and sample output passage being connected to microcavity are wherein respectively set in the cover board；
The graphene layer is periodic nano-structure, and the periodic nano-structure includes that multiple continuous vertical sections are platform
The structure of scalariform；
The cover board is placed in above the graphene phasmon device.
Preferably, the patterning coating to form microcavity channel is respectively set in the both ends of the microcavity.
Preferably, the sensor further includes infrared window, and the infrared window is placed in the top of the microcavity.
Preferably, the material of the dielectric layer is permeable to infrared, and has dielectric properties；The dielectric layer
Material is selected from：SiO2,MgF2,Al2O3,CaF2,BaF2, LiF, AgBr, AgCl, ZnS, ZnSe, KRS-5, AMTIR1-6, diamond
And diamond-like；The thickness range of the dielectric layer is：10‐1000nm.
Preferably, the substrate is low-doped silicon chip.
Preferably, the periodic nano-structure of the graphene layer includes graphene micro-structure and the graphene area that etches away
Domain, wherein the graphene micro-structure includes rectangle, square, ellipse.
Preferably, the size of the graphene micro-structure and the graphene area size that etches away in any one direction exists
Within the scope of 10-1000nm.
Preferably, the microcavity can be that processing is prepared groove and formed below the cover board, can also be by stone
Deposit patterned film on black alkene device forms channel.
Preferably, the cover plate materials are selected from Si, MgF2,CaF2,BaF2,Al2O3, SiN, the thickness of the cover board is in 0.1-
In 5000 μ ms.
A method of the sensor is prepared, the described method comprises the following steps：
Substrate is prepared, and prepares dielectric layer on the substrate；
Graphene layer is prepared on the substrate, and graphene micro-structure is prepared on graphene layer；
Prepare gas microcavity；
Process the cover board with sample intake passage and sample output passage；
It is packaged, obtains the sensor；
The test of gas trafficability performance and enhancing infrared spectrum performance to the sensor.
Beneficial effects of the present invention：It is gas microcavity above graphene layer of the present invention, graphene phasmon can be with gas
Interaction of molecules realizes pointing out for gaseous species, while the present invention to obtain the gas infrared spectrum of phasmon enhancing
The gas molecule of denier can be detected, phasmon wavelength is in middle infrared band (resonant frequency 400-3000 wave numbers), institute
State that sensor is reusable, can integrate.
It should be appreciated that aforementioned description substantially and follow-up description in detail are exemplary illustration and explanation, it should not
As the limitation to the claimed content of the present invention.
Description of the drawings
With reference to the attached drawing of accompanying, the more purposes of the present invention, function and advantage are by the as follows of embodiment through the invention
Description is illustrated, wherein：
Fig. 1 diagrammatically illustrates the structural schematic diagram of first embodiment graphene phasmon gas sensor in the present invention
(sectional view)；
Fig. 2 diagrammatically illustrates the structural schematic diagram of second embodiment graphene phasmon gas sensor in the present invention
(sectional view)；
Fig. 3 diagrammatically illustrates the structural schematic diagram of 3rd embodiment graphene phasmon gas sensor in the present invention
(sectional view)；
Fig. 4 diagrammatically illustrates the schematic diagram of electricity regulation and control graphene phasmon device of the present invention；
Fig. 5 diagrammatically illustrates the schematic diagram of the periodic nano-structure of graphene layer in the present invention；
Fig. 6 diagrammatically illustrates the production method flow chart of graphene phasmon gas sensor of the present invention；
Fig. 7 diagrammatically illustrates measured when being passed through without gas on graphene phasmon gas sensor of the present invention disappear
Spectrogram；
Fig. 8 diagrammatically illustrates the when of being passed through sulfur dioxide gas on graphene phasmon gas sensor of the present invention and is surveyed
The delustring spectrogram obtained.
Specific implementation mode
By reference to exemplary embodiment, the purpose of the present invention and function and the side for realizing these purposes and function
Method will be illustrated.However, the present invention is not limited to exemplary embodiment as disclosed below；Can by different form come
It is realized.The essence of specification is only to aid in the detail of the various equivalent modifications Integrated Understanding present invention.
Hereinafter, the embodiment of the present invention will be described with reference to the drawings.In the accompanying drawings, identical reference numeral represents identical
Or similar component or same or like step.
Embodiment 1
Fig. 1 show the sectional view of first embodiment graphene phasmon gas sensor in the present invention, according to this hair
Bright first embodiment, graphene phasmon gas sensor 100 includes substrate successively from bottom to top wherein in the present embodiment
101, dielectric layer 102, graphene layer 103, microcavity 108 and cover board 109,
Metal electrode 104 and metal electrode 105, wherein metal electrode is respectively set in wherein described 103 both ends of graphene layer
104 and metal electrode 105 be selected from chromium, titanium, iron, aluminium, copper, gold, silver, platinum.
The patterning coating 106 to form microcavity channel is respectively set for the both ends of the wherein microcavity 108 and to form microcavity logical
The patterning coating 107 in road；The thickness of the microcavity 108 is within the scope of 10~200nm.
The sample intake passage 110 being connected to microcavity 108 and sample output passage 111 wherein is respectively set in the cover board 109,
109 material of the cover board is selected from Si, MgF2,CaF2,BaF2,Al2O3, SiN, the thickness of the cover board 109 is in 0.1-
In 5000 μ ms, wherein the shape of the cover board 109 includes but not limited to rectangle, including but not limited to the cover board 109 is
Global shape or Partitional form.
Wherein specifically, under test gas is passed through from 110 one end of the sample intake passage, flowed out from 111 one end of sample output passage.This
The sensor of invention can be used for enhancing the infra-red absorbance signals of gas molecule, and monitor its change procedure.
Wherein substrate 101 is connect with metal electrode 104 or metal electrode 105 by gate-voltage source 112, wherein the base
Bottom 101 is low-doped silicon chip, the concentration of phasmon (middle carrier) in 112 controllable graphene layer of the grid voltage.
There is periodic nano-structure on graphene layer 103 wherein in the present embodiment between metal electrode 104 and 105,
The periodic nano-structure includes that multiple continuous vertical sections are step-like structure.
Fig. 5 a~Fig. 5 f show the schematic diagram of the periodic nano-structure of graphene layer in the present embodiment, wherein 501
(black) is graphene micro-structure；502 (whites) are the graphene region etched away.
Wherein Fig. 5 a-5c show three kinds of representative graphene layer periodic nano-structures, wherein graphene micro-structure
Including rectangle, square and ellipse；As shown in Figure 5 a, graphene net band through-hole structure is etched on graphene layer
502, graphene micro-structure is to be left rectangular configuration 501 on graphene layer,
Fig. 5 d-5f show corresponding antistructure, wherein the graphene region etched away include rectangle, square and
Ellipse etches rectangular through-hole 502 on graphene layer as fig 5d, and graphene micro-structure is remaining nanoribbons net
Shape structure 501.
The shape of wherein micro-structure is not limited to these three, can be other regularly or irregularly shapes, at one
Size on direction is within the scope of 10-1000nm.
Local phasmon can be inspired when graphene layer 103 described in the Infrared irradiation, in graphene micro-structure 501
Generate local Electromagnetic enhancement.
Wherein, the graphene layer structure used in the present embodiment is as fig 5d, square to be etched on graphene layer
Shape through-hole 502 is left nanoribbons reticular structure 501 on graphene layer.
Wherein, metal electrode 104 defined in the present embodiment is source electrode, and metal electrode 105 is drain electrode.
The graphene layer 103 includes the graphene layer of single layer, two layers or two layers or more, it is preferable that can be used 1-3 layers
Graphene layer is covered on dielectric layer 102, and is contacted with source electrode and drain electrode lower surface, and source electrode and drain electrode gold are formed
Belong to the conducting channel of interlayer.
Preferably, single-layer graphene is used in the present embodiment.
Shown dielectric layer 102 is placed under graphene layer 103 and forms bottom grating structure.The dielectric layer 102 can be selected
But it is not limited to SiO2,MgF2,Al2O3,CaF2,BaF2,LiF,AgBr,AgCl,ZnS,ZnSe,KRS‐5,AMTIR1‐6,
Diamond, Diamond like carbon. are NaCl, KBr, CaF2,BaF2Its application can be limited by being slightly soluble in the property of water.
Embodiment 2
Fig. 2 shows the structural schematic diagrams of the graphene phasmon gas sensor of second embodiment in the present invention (to cut open
Face figure).
Graphene phasmon gas sensor 200 includes substrate 201 successively from bottom to top wherein in the present embodiment, and electricity is situated between
Matter layer 202, graphene layer 203, microcavity 206 and cover board 207,
Metal electrode 204 and metal electrode 205 is respectively set in wherein described 203 both ends of graphene layer；
The sample intake passage 208 being connected to microcavity 206 and sample output passage 209 wherein is respectively set in the cover board 207；
Wherein substrate 201 is connect with metal electrode 204 or metal electrode 205 by gate-voltage source 210.
Embodiment 3
Fig. 3 shows the structural schematic diagram (section of the graphene phasmon gas sensor of third embodiment of the invention
Figure).
Graphene phasmon gas sensor 300 includes substrate 3201, electricity successively from bottom to top wherein in the present embodiment
Dielectric layer 302, graphene layer 303, infrared window 309, microcavity 308 and cover board 310 and cover board 311,
Metal electrode 304 and metal electrode 305 is respectively set in wherein described 303 both ends of graphene layer；
Wherein the sample intake passage 312 being connected to microcavity 308 is respectively set and goes out sample in the cover board 310 and cover board 311 and leads to
Road 313；
Wherein substrate 301 is connect with metal electrode 304 or metal electrode 305 by gate-voltage source 314；
The wherein described infrared window piece 309 includes SiN windows, permeable to infrared.
The present embodiment cover plate is Partitional form, including trapezoidal shape cover board 310 and trapezoidal shape cover board 311.
Fig. 4 shows the schematic diagram of electricity regulation and control graphene phasmon device of the present invention.102 (202,302) are
Dielectric layer；103 (203,303) are graphene micro-structure；104 (204,304) and 105 (205,305) are electrode.
Fig. 6 show the production method flow chart of graphene phasmon gas sensor of the present invention, such as Fig. 6 institutes
Show, specifically includes following steps：
Step 601：It is prepared by substrate；
The support substrate of the present invention selects infrared transparent, firm and smooth surface material, and electricity is prepared in this substrate
Dielectric layer.Select the silicon chip that thickness is 500 μm of single-sided polishings as substrate in one embodiment of the present of invention；And in this substrate
The MgF of 400nm thickness on vapor deposition2Film is as dielectric layer；
Step 602：Graphene micro-structure is prepared in shown substrate；
Large-area graphene prepared by chemical vapor deposition method is transferred to first in one embodiment of the present of invention
SiO2In/Si substrates, carries out electron beam exposure processing and plasma etching forms nanoribbons grid, then carry out secondary electricity
Beamlet exposure processing and evaporation metal electrode.Then it is shifted by wet method and the device machined is transferred to MgF2/ Si substrates
On；
Step 603：Prepare gas microcavity；
It processes and is deposited by electron beam exposure in graphene phasmon device surface in one embodiment of the present of invention
Silicon thin film prepares the film with channel pattern.The film of the channel pattern is gas microcavity channel；
Step 604：Process the cover board with sample intake passage and sample output passage；
In CaF in one embodiment of the present of invention22 through-holes are made a call on crystal as sample intake passage and sample output passage, it is described
Sample intake passage and sample output passage need corresponding with the microcavity channel position in substrate；
Step 605：The encapsulation of cover board and graphene device obtains the gas sensor based on graphene phasmon；
It is bonded together using epoxy adhesive by cover board and with graphene device in one embodiment of the present of invention；
Step 606：The test of gas trafficability performance and enhancing infrared spectrum performance to sensor.
Fig. 7 is shown, and Spectral Extinction measured when being passed through without gas on the graphene phasmon gas sensor shows
Example, it can be seen that plasmon resonance absorption peak, and the RESONANCE ABSORPTION can be regulated and controled by grid voltage.
Fig. 8 is shown is passed through SO on the graphene phasmon gas sensor2Spectral Extinction example measured by gas,
It can be seen that on plasmon resonance absorption peak, there are SO2The resonance absorbing peak of gas.
Explanation in conjunction with the present invention disclosed here and practice, the other embodiment of the present invention is for those skilled in the art
It all will be readily apparent and understand.Illustrate and embodiment is regarded only as being exemplary, true scope of the invention and purport are equal
It is defined in the claims.
Claims (10)
1. a kind of graphene phasmon gas sensor, including cover board and graphene phasmon device,
The wherein described graphene phasmon device, from bottom to top successively include substrate, dielectric layer, graphene layer, microcavity,
The wherein described graphene layer both ends are respectively set to metal electrode；
The sample intake passage and sample output passage being connected to microcavity are wherein respectively set in the cover board；
The graphene layer is periodic nano-structure, and the periodic nano-structure includes that multiple continuous vertical sections are step-like
Structure；
The cover board is placed in above the graphene phasmon device.
2. sensor according to claim 1, which is characterized in that the both ends of the microcavity are respectively set to form microcavity channel
Patterning coating.
3. sensor according to claim 1, which is characterized in that the sensor further includes infrared window, described infrared
Window is placed in the top of the microcavity.
4. sensor according to claim 1, which is characterized in that the material of the dielectric layer is permeable to infrared,
And there are dielectric properties；The material of the dielectric layer is selected from：SiO2,MgF2,Al2O3,CaF2,BaF2,LiF,AgBr,AgCl,
ZnS, ZnSe, KRS-5, AMTIR1-6, diamond and diamond-like；The thickness range of the dielectric layer is：10‐1000nm.
5. sensor according to claim 1, which is characterized in that the substrate is low-doped silicon chip.
6. sensor according to claim 1, which is characterized in that the periodic nano-structure of the graphene layer includes stone
Black alkene micro-structure and the graphene region etched away, wherein the graphene micro-structure includes rectangle, square, ellipse.
7. sensor according to claim 6, which is characterized in that the graphene micro-structure and the graphene area etched away
Domain sizes any one direction size within the scope of 10-1000nm.
8. sensor according to claim 1, which is characterized in that the microcavity can process system below the cover board
It is formed for groove is gone out, channel can also be formed by the deposit patterned film on graphene device.
9. sensor according to claim 1, which is characterized in that the cover plate materials are selected from Si, MgF2,CaF2,BaF2,
Al2O3, SiN, the thickness of the cover board is in 0.1-5000 μ ms.
10. a kind of method preparing sensor described in any one of claim 1-9, the described method comprises the following steps：
Substrate is prepared, and prepares dielectric layer on the substrate；
Graphene layer is prepared on the substrate, and graphene micro-structure is prepared on graphene layer；
Prepare gas microcavity；
Process the cover board with sample intake passage and sample output passage；
It is packaged, obtains the sensor；
The test of gas trafficability performance and enhancing infrared spectrum performance to the sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810644987.9A CN108593585A (en) | 2018-06-21 | 2018-06-21 | A kind of graphene phasmon gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810644987.9A CN108593585A (en) | 2018-06-21 | 2018-06-21 | A kind of graphene phasmon gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108593585A true CN108593585A (en) | 2018-09-28 |
Family
ID=63628581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810644987.9A Pending CN108593585A (en) | 2018-06-21 | 2018-06-21 | A kind of graphene phasmon gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108593585A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110530969A (en) * | 2019-08-14 | 2019-12-03 | 江苏大学 | A kind of preparation process of the graphene resonant mode gas sensor based on doping metals atom |
| CN114486802A (en) * | 2022-02-10 | 2022-05-13 | 国家纳米科学中心 | Plasmon enhanced infrared spectrum sensor for detecting protein secondary structure in aqueous solution and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101360986A (en) * | 2005-12-16 | 2009-02-04 | 印第安纳大学研究及科技有限公司 | Sub-micron surface plasmon resonance sensor systems |
| CN102288583A (en) * | 2011-07-15 | 2011-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transmission-type metal grating coupling SPR (Surface Plasmon Resonance) detection chip and detection instrument |
| CN103199020A (en) * | 2013-03-05 | 2013-07-10 | 中国科学院上海微系统与信息技术研究所 | Preparing method and detecting method of liquid grid type grapheme field-effect tube based on polyimide (PI) |
| CN103776790A (en) * | 2014-02-25 | 2014-05-07 | 重庆大学 | Infrared spectrum enhancement and detection method and infrared spectrum enhancement and detection device based on graphene nano antenna |
| CN105355702A (en) * | 2015-11-17 | 2016-02-24 | 国家纳米科学中心 | Graphene plasmon device used for enhancing infrared spectrum detection and preparation method thereof |
| CN106596449A (en) * | 2016-12-05 | 2017-04-26 | 武汉邮电科学研究院 | Intermediate infrared graphene plasmon polariton biochemical sensor |
| CN107271398A (en) * | 2017-07-12 | 2017-10-20 | 深圳市太赫兹科技创新研究院 | A kind of plasmon waveguide, bio-sensing chip and system |
-
2018
- 2018-06-21 CN CN201810644987.9A patent/CN108593585A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101360986A (en) * | 2005-12-16 | 2009-02-04 | 印第安纳大学研究及科技有限公司 | Sub-micron surface plasmon resonance sensor systems |
| CN102288583A (en) * | 2011-07-15 | 2011-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transmission-type metal grating coupling SPR (Surface Plasmon Resonance) detection chip and detection instrument |
| CN103199020A (en) * | 2013-03-05 | 2013-07-10 | 中国科学院上海微系统与信息技术研究所 | Preparing method and detecting method of liquid grid type grapheme field-effect tube based on polyimide (PI) |
| CN103776790A (en) * | 2014-02-25 | 2014-05-07 | 重庆大学 | Infrared spectrum enhancement and detection method and infrared spectrum enhancement and detection device based on graphene nano antenna |
| CN105355702A (en) * | 2015-11-17 | 2016-02-24 | 国家纳米科学中心 | Graphene plasmon device used for enhancing infrared spectrum detection and preparation method thereof |
| CN106596449A (en) * | 2016-12-05 | 2017-04-26 | 武汉邮电科学研究院 | Intermediate infrared graphene plasmon polariton biochemical sensor |
| CN107271398A (en) * | 2017-07-12 | 2017-10-20 | 深圳市太赫兹科技创新研究院 | A kind of plasmon waveguide, bio-sensing chip and system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110530969A (en) * | 2019-08-14 | 2019-12-03 | 江苏大学 | A kind of preparation process of the graphene resonant mode gas sensor based on doping metals atom |
| CN114486802A (en) * | 2022-02-10 | 2022-05-13 | 国家纳米科学中心 | Plasmon enhanced infrared spectrum sensor for detecting protein secondary structure in aqueous solution and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Peng et al. | Terahertz spectroscopy in biomedical field: a review on signal-to-noise ratio improvement | |
| Banaei et al. | Multiplex detection of pancreatic cancer biomarkers using a SERS-based immunoassay | |
| CN105355702B (en) | Graphene plasmon device used for enhancing infrared spectrum detection and preparation method thereof | |
| RU2361193C2 (en) | Optical sensor with multilayered plasmon structure for improved detection of chemical groups through sers | |
| CN103776790B (en) | A kind of infrared spectrum based on graphene nano antenna strengthens and detection method and device | |
| JP4481967B2 (en) | Sensor device | |
| CN108548807A (en) | Graphene phasmon device and preparation method thereof for enhanced highpass filtering signal | |
| KR101097205B1 (en) | Fabrication method of substrate for surface enhanced raman scattering | |
| CN108254353B (en) | The infrared double spectra devices of the conformal nano-probe enhancing Raman of graphene metal and preparation method | |
| US8599486B2 (en) | Three dimensional sub-wavelength structure with surface plasmon energy matching properties | |
| CN108593585A (en) | A kind of graphene phasmon gas sensor | |
| Di Meo et al. | Metasurface based on cross-shaped plasmonic nanoantennas as chemical sensor for surface-enhanced infrared absorption spectroscopy | |
| CN108258428A (en) | For the Meta Materials of electromagnetic wave filter | |
| CN108593590A (en) | A kind of graphene phasmon liquid sensor | |
| CN109596574A (en) | A kind of surface plasma resonance sensor and preparation method thereof of molybdenum disulfide enhanced sensitivity | |
| JP4659018B2 (en) | Surface plasmon sensor | |
| Miyan et al. | Computational study of 2D photonic crystal based biosensor for SARS-COV-2 detection | |
| JP5968319B2 (en) | Nanoparticle-coated substrates and use for isolated molecule detection | |
| CN101726470B (en) | Refractive index sensor based on surface plasmon interference and detecting method thereof | |
| CN105044029B (en) | Sensor and sensor testing system based on guided wave resonance | |
| CN103424393A (en) | Surface enhanced Raman based organic phosphorus detection method | |
| US20150362433A1 (en) | Chemical sensing device | |
| US10520440B2 (en) | Gas-phase delivery system for molecule sensing apparatus | |
| CN105352906B (en) | Graphene phasmon enhances the spectral line peak separation method of infrared spectrum detection | |
| US20110085172A1 (en) | Visualized plasmon resonance biodetector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180928 |
|
| RJ01 | Rejection of invention patent application after publication |