CN108579722A - One kind is for light-catalysed semiconductor nano material and preparation method thereof - Google Patents
One kind is for light-catalysed semiconductor nano material and preparation method thereof Download PDFInfo
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- CN108579722A CN108579722A CN201810618584.7A CN201810618584A CN108579722A CN 108579722 A CN108579722 A CN 108579722A CN 201810618584 A CN201810618584 A CN 201810618584A CN 108579722 A CN108579722 A CN 108579722A
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000000243 solution Substances 0.000 claims abstract description 119
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 63
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 63
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 claims abstract description 59
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000007864 aqueous solution Substances 0.000 claims abstract description 41
- 239000002253 acid Substances 0.000 claims abstract description 33
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229960002887 deanol Drugs 0.000 claims abstract description 31
- 239000012972 dimethylethanolamine Substances 0.000 claims abstract description 31
- 235000011121 sodium hydroxide Nutrition 0.000 claims abstract description 31
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims abstract description 30
- 239000001119 stannous chloride Substances 0.000 claims abstract description 30
- 235000011150 stannous chloride Nutrition 0.000 claims abstract description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 19
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- 238000003756 stirring Methods 0.000 claims description 38
- 239000007788 liquid Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 18
- 238000001354 calcination Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- 238000003541 multi-stage reaction Methods 0.000 claims description 11
- 238000001291 vacuum drying Methods 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 239000002202 Polyethylene glycol Substances 0.000 claims description 9
- 235000019441 ethanol Nutrition 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 229920001223 polyethylene glycol Polymers 0.000 claims description 9
- -1 polytetrafluoroethylene Polymers 0.000 claims description 9
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 9
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 9
- 239000002244 precipitate Substances 0.000 claims description 9
- 230000035484 reaction time Effects 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 238000005660 chlorination reaction Methods 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 230000001699 photocatalysis Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 5
- 238000007146 photocatalysis Methods 0.000 abstract description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- 238000003912 environmental pollution Methods 0.000 abstract description 4
- 231100000252 nontoxic Toxicity 0.000 abstract description 4
- 230000003000 nontoxic effect Effects 0.000 abstract description 4
- 239000005416 organic matter Substances 0.000 abstract description 4
- 230000009967 tasteless effect Effects 0.000 abstract description 4
- 230000003197 catalytic effect Effects 0.000 abstract description 3
- 239000001569 carbon dioxide Substances 0.000 abstract description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 2
- 238000011156 evaluation Methods 0.000 abstract description 2
- 239000011885 synergistic combination Substances 0.000 abstract description 2
- 238000001035 drying Methods 0.000 description 21
- 230000032683 aging Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005242 forging Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- GCNLQHANGFOQKY-UHFFFAOYSA-N [C+4].[O-2].[O-2].[Ti+4] Chemical compound [C+4].[O-2].[O-2].[Ti+4] GCNLQHANGFOQKY-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- BAYWBMHACGGBSO-UHFFFAOYSA-N methanol;tin Chemical compound [Sn].OC BAYWBMHACGGBSO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/18—Arsenic, antimony or bismuth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/002—Mixed oxides other than spinels, e.g. perovskite
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/20—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state
- B01J35/23—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state in a colloidal state
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/391—Physical properties of the active metal ingredient
- B01J35/393—Metal or metal oxide crystallite size
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/10—Heat treatment in the presence of water, e.g. steam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
- B01J37/344—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation of electromagnetic wave energy
- B01J37/346—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation of electromagnetic wave energy of microwave energy
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Abstract
The invention discloses one kind being used for light-catalysed semiconductor nano material, including following raw material：Stannous chloride methanol solution, acid solution, bismuth chloride solution, aqueous dimethylethanolamine, sodium hydrate aqueous solution；Wherein, it according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio mixes.The invention also discloses the preparation methods for light-catalysed semiconductor nano material.Prepared by the present invention has good photocatalytic activity for light-catalysed semiconductor nano material, it is prepared by ultrasonic microwave synergistic combination effect most short up to 30 nanometers for light-catalysed semiconductor nano material length, catalytic activity simultaneously in photocatalytic activity evaluation is good, it can be used for photocatalysis Decomposition inorganic matter and organic matter generate nontoxic, tasteless carbon dioxide, water etc., problem of environmental pollution is advantageously accounted for, foreground is had a vast market.
Description
Technical field
The present invention relates to functional material preparing technical field, it is specifically a kind of for light-catalysed semiconductor nano material and
Preparation method.
Background technology
Nanotechnology need not be set as a kind of emerging science and technology of most market application potential, potential importance
Doubt, nano material refer in three dimensions it is at least one-dimensional in nano-scale (0.1-100 nm) or by them as basic
The material that unit is constituted.By the way that nano material is made in the semi-conducting materials such as silicon, GaAs, there can be many excellent properties.
For example, the quantum tunneling effect in Nano semiconductor makes electron transport abnormality, the conductivity of certain semi-conducting materials reduce, conductance
Hot coefficient also declines with the reduction of particle size, or even negative value occurs, these characteristics are in LSI devices, photoelectricity
The fields such as device play an important role.
Current mankind is faced with problem of environmental pollution, and a large amount of organic and inorganic refuse brings people’s lives and environment
Adverse effect, therefore, the electrons and holes generated when being irradiated using Nano semiconductor particles light have stronger reduction and oxygen
Change ability designs a kind of semiconductor nano material, and nontoxic, tasteless dioxy is generated for photocatalysis Decomposition inorganic matter and organic matter
The problem of changing carbon, water etc., becoming urgent need to resolve.
Invention content
The purpose of the present invention is to provide one kind for light-catalysed semiconductor nano material and preparation method thereof, to solve
The problems mentioned above in the background art.
To achieve the above object, the present invention provides the following technical solutions：
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 5-
12 parts, 22-35 parts of acid solution, 1-5 parts of bismuth chloride solution, 0.5-1.5 parts of aqueous dimethylethanolamine, sodium hydroxide it is water-soluble
70-85 parts of liquid；Wherein, it according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio
It mixes.
As a further solution of the present invention：Including below according to the raw material of parts by weight：6-10 parts of stannous chloride methanol solution,
25-32 parts of acid solution, 2-4 parts of bismuth chloride solution, 0.7-1.2 parts of aqueous dimethylethanolamine, sodium hydrate aqueous solution 75-
82 parts.
As further scheme of the invention：Including below according to the raw material of parts by weight：8 parts of stannous chloride methanol solution,
30 parts of acid solution, 3 parts of bismuth chloride solution, 1 part of aqueous dimethylethanolamine, 80 parts of sodium hydrate aqueous solution.
As further scheme of the invention：A concentration of 0.1-3mol/L of the sodium hydrate aqueous solution；Described two
A concentration of 0.001-0.01mol/L of methyl ethanol amine aqueous solution.
As further scheme of the invention：A concentration of 3mol/L of the oxalic acid；The concentration of the bismuth chloride solution
For 0.02mol/L；A concentration of 0.4mol/L of the stannous chloride methanol solution.
As further scheme of the invention：The preparation method of the bismuth chloride solution is to be fitted what bismuth chloride was added to
In the polyethylene glycol of amount, ultrasonic disperse 10-30min is carried out to get the bismuth chloride solution with the supersonic frequency of 20-45kHz.
The preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 15-25 DEG C, is sent into
In ultrasonic microwave composite reaction instrument, processing 2-10min is carried out at normal temperatures, obtains mixed liquor A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 15-25 DEG C）In obtained mixed liquor
A continues to stir 30-50min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 4-10h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then put
Enter in vacuum drying chamber and be dried at 65 DEG C 4 hours, obtains mixture C；
4）By step 3）In in obtained mixture C merging Muffle furnace, 500 DEG C of progress are warming up to 6 DEG C/min of heating rate
It is calcined 4-6h, sample D must be calcined；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, addition sodium hydrate aqueous solution, reaction time 18-20 hour under the conditions of 110-130 DEG C, instead
It is cooled to room temperature after answering, filters taking precipitate, washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized water
Wash, be subsequently placed in vacuum drying chamber dry, crush to get.
As further scheme of the invention：Step 1）In, the processing item of the ultrasonic microwave composite reaction instrument
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 20-80W, microwave frequency 2000MHz, microwave power 20-80W.
As further scheme of the invention：Step 2）In, the stir speed (S.S.) of the stirring is 200-400r/min；Institute
The rate for stating dropwise addition is 60 drops/minute.
Described is used for purposes of the light-catalysed semiconductor nano material in preparing nano material.
Compared with prior art, the beneficial effects of the invention are as follows：
Prepared by the present invention has good photocatalytic activity for light-catalysed semiconductor nano material, passes through ultrasonic microwave
Synergistic combination effect is prepared most short up to 30 nanometers for light-catalysed semiconductor nano material length, while being lived in photocatalysis
Property evaluation in catalytic activity it is good, can be used for photocatalysis Decomposition inorganic matter and organic matter generate nontoxic, tasteless titanium dioxide
Carbon, water etc., advantageously account for problem of environmental pollution, have a vast market foreground.
Specific implementation mode
Technical scheme of the present invention is described in more detail With reference to embodiment.
Embodiment 1
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 5
Part, 22 parts of acid solution, 1 part of bismuth chloride solution, 0.5 part of aqueous dimethylethanolamine, 70 parts of sodium hydrate aqueous solution.Its
In, a concentration of 1mol/L of the sodium hydrate aqueous solution；A concentration of 0.005mol/L of the aqueous dimethylethanolamine；
A concentration of 3mol/L of the oxalic acid；A concentration of 0.02mol/L of the bismuth chloride solution；The stannous chloride methanol solution it is dense
Degree is 0.4mol/L；It according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio is mixed
It closes；The preparation method of the bismuth chloride solution is ultrasonic disperse in the suitable polyethylene glycol for being added to bismuth chloride
20min, the supersonic frequency of the ultrasonic disperse are 35kHz to get the bismuth chloride solution.
In the present embodiment, the preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 20 DEG C, is sent into super
Sound wave microwave combination reacts in instrument, carries out processing 6min, the processing item of the ultrasonic microwave composite reaction instrument at normal temperatures
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 40W, microwave frequency 2000MHz, and microwave power 40W obtains mixed liquor
A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 20 DEG C）In obtained mixed liquor A, institute
The rate for stating dropwise addition is 60 drops/minute, then continues to stir 40min with the stir speed (S.S.) of 300r/min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 6h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then placed in true
It is dried in empty drying box, the drying time is 4 hours, and the drying temperature is 65 DEG C, obtains mixture C；
4）By step 3）In be calcined in obtained mixture C merging Muffle furnace, the calcination temperature is 500 DEG C, the forging
The burning time is 5h, and heating rate is 6 DEG C/min, must calcine sample D；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, sodium hydrate aqueous solution is added, in 18 hours reaction time under the conditions of 120 DEG C, reaction terminates
Postcooling filters taking precipitate, is washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized, then to room temperature
Be placed in vacuum drying chamber dry, crush to get.
Embodiment 2
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 12
Part, 35 parts of acid solution, 5 parts of bismuth chloride solution, 1.5 parts of aqueous dimethylethanolamine, 85 parts of sodium hydrate aqueous solution.Its
In, a concentration of 1mol/L of the sodium hydrate aqueous solution；A concentration of 0.005mol/L of the aqueous dimethylethanolamine；
A concentration of 3mol/L of the oxalic acid；A concentration of 0.02mol/L of the bismuth chloride solution；The stannous chloride methanol solution it is dense
Degree is 0.4mol/L；It according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio is mixed
It closes；The preparation method of the bismuth chloride solution is ultrasonic disperse in the suitable polyethylene glycol for being added to bismuth chloride
20min, the supersonic frequency of the ultrasonic disperse are 35kHz to get the bismuth chloride solution.
In the present embodiment, the preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 20 DEG C, is sent into super
Sound wave microwave combination reacts in instrument, carries out processing 6min, the processing item of the ultrasonic microwave composite reaction instrument at normal temperatures
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 40W, microwave frequency 2000MHz, and microwave power 40W obtains mixed liquor
A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 20 DEG C）In obtained mixed liquor A, institute
The rate for stating dropwise addition is 60 drops/minute, then continues to stir 40min with the stir speed (S.S.) of 300r/min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 6h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then placed in true
It is dried in empty drying box, the drying time is 4 hours, and the drying temperature is 65 DEG C, obtains mixture C；
4）By step 3）In be calcined in obtained mixture C merging Muffle furnace, the calcination temperature is 500 DEG C, the forging
The burning time is 5h, and heating rate is 6 DEG C/min, must calcine sample D；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, sodium hydrate aqueous solution is added, in 18 hours reaction time under the conditions of 120 DEG C, reaction terminates
Postcooling filters taking precipitate, is washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized, then to room temperature
Be placed in vacuum drying chamber dry, crush to get.
Embodiment 3
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 8.5
Part, 28.5 parts of acid solution, 3 parts of bismuth chloride solution, 1 part of aqueous dimethylethanolamine, 77.5 parts of sodium hydrate aqueous solution.Its
In, a concentration of 1mol/L of the sodium hydrate aqueous solution；A concentration of 0.005mol/L of the aqueous dimethylethanolamine；
A concentration of 3mol/L of the oxalic acid；A concentration of 0.02mol/L of the bismuth chloride solution；The stannous chloride methanol solution it is dense
Degree is 0.4mol/L；It according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio is mixed
It closes；The preparation method of the bismuth chloride solution is ultrasonic disperse in the suitable polyethylene glycol for being added to bismuth chloride
20min, the supersonic frequency of the ultrasonic disperse are 35kHz to get the bismuth chloride solution.
In the present embodiment, the preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 20 DEG C, is sent into super
Sound wave microwave combination reacts in instrument, carries out processing 6min, the processing item of the ultrasonic microwave composite reaction instrument at normal temperatures
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 40W, microwave frequency 2000MHz, and microwave power 40W obtains mixed liquor
A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 20 DEG C）In obtained mixed liquor A, institute
The rate for stating dropwise addition is 60 drops/minute, then continues to stir 40min with the stir speed (S.S.) of 300r/min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 6h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then placed in true
It is dried in empty drying box, the drying time is 4 hours, and the drying temperature is 65 DEG C, obtains mixture C；
4）By step 3）In be calcined in obtained mixture C merging Muffle furnace, the calcination temperature is 500 DEG C, the forging
The burning time is 5h, and heating rate is 6 DEG C/min, must calcine sample D；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, sodium hydrate aqueous solution is added, in 18 hours reaction time under the conditions of 120 DEG C, reaction terminates
Postcooling filters taking precipitate, is washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized, then to room temperature
Be placed in vacuum drying chamber dry, crush to get.
Embodiment 4
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 6
Part, 25 parts of acid solution, 2 parts of bismuth chloride solution, 0.7 part of aqueous dimethylethanolamine, 75 parts of sodium hydrate aqueous solution.Its
In, a concentration of 1mol/L of the sodium hydrate aqueous solution；A concentration of 0.005mol/L of the aqueous dimethylethanolamine；
A concentration of 3mol/L of the oxalic acid；A concentration of 0.02mol/L of the bismuth chloride solution；The stannous chloride methanol solution it is dense
Degree is 0.4mol/L；It according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio is mixed
It closes；The preparation method of the bismuth chloride solution is ultrasonic disperse in the suitable polyethylene glycol for being added to bismuth chloride
20min, the supersonic frequency of the ultrasonic disperse are 35kHz to get the bismuth chloride solution.
In the present embodiment, the preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 20 DEG C, is sent into super
Sound wave microwave combination reacts in instrument, carries out processing 6min, the processing item of the ultrasonic microwave composite reaction instrument at normal temperatures
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 40W, microwave frequency 2000MHz, and microwave power 40W obtains mixed liquor
A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 20 DEG C）In obtained mixed liquor A, institute
The rate for stating dropwise addition is 60 drops/minute, then continues to stir 40min with the stir speed (S.S.) of 300r/min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 6h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then placed in true
It is dried in empty drying box, the drying time is 4 hours, and the drying temperature is 65 DEG C, obtains mixture C；
4）By step 3）In be calcined in obtained mixture C merging Muffle furnace, the calcination temperature is 500 DEG C, the forging
The burning time is 5h, and heating rate is 6 DEG C/min, must calcine sample D；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, sodium hydrate aqueous solution is added, in 18 hours reaction time under the conditions of 120 DEG C, reaction terminates
Postcooling filters taking precipitate, is washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized, then to room temperature
Be placed in vacuum drying chamber dry, crush to get.
Embodiment 5
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 10
Part, 32 parts of acid solution, 4 parts of bismuth chloride solution, 1.2 parts of aqueous dimethylethanolamine, 82 parts of sodium hydrate aqueous solution.Its
In, a concentration of 1mol/L of the sodium hydrate aqueous solution；A concentration of 0.005mol/L of the aqueous dimethylethanolamine；
A concentration of 3mol/L of the oxalic acid；A concentration of 0.02mol/L of the bismuth chloride solution；The stannous chloride methanol solution it is dense
Degree is 0.4mol/L；It according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio is mixed
It closes；The preparation method of the bismuth chloride solution is ultrasonic disperse in the suitable polyethylene glycol for being added to bismuth chloride
20min, the supersonic frequency of the ultrasonic disperse are 35kHz to get the bismuth chloride solution.
In the present embodiment, the preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 20 DEG C, is sent into super
Sound wave microwave combination reacts in instrument, carries out processing 6min, the processing item of the ultrasonic microwave composite reaction instrument at normal temperatures
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 40W, microwave frequency 2000MHz, and microwave power 40W obtains mixed liquor
A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 20 DEG C）In obtained mixed liquor A, institute
The rate for stating dropwise addition is 60 drops/minute, then continues to stir 40min with the stir speed (S.S.) of 300r/min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 6h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then placed in true
It is dried in empty drying box, the drying time is 4 hours, and the drying temperature is 65 DEG C, obtains mixture C；
4）By step 3）In be calcined in obtained mixture C merging Muffle furnace, the calcination temperature is 500 DEG C, the forging
The burning time is 5h, and heating rate is 6 DEG C/min, must calcine sample D；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, sodium hydrate aqueous solution is added, in 18 hours reaction time under the conditions of 120 DEG C, reaction terminates
Postcooling filters taking precipitate, is washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized, then to room temperature
Be placed in vacuum drying chamber dry, crush to get.
Embodiment 6
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 8
Part, 28.5 parts of acid solution, 3 parts of bismuth chloride solution, 0.95 part of aqueous dimethylethanolamine, sodium hydrate aqueous solution 78.5
Part.Wherein, a concentration of 1mol/L of the sodium hydrate aqueous solution；The aqueous dimethylethanolamine it is a concentration of
0.005mol/L；A concentration of 3mol/L of the oxalic acid；A concentration of 0.02mol/L of the bismuth chloride solution；The protochloride
A concentration of 0.4mol/L of tin methanol solution；It according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:
3:10 ratio mixes；The preparation method of the bismuth chloride solution is the suitable polyethylene glycol for being added to bismuth chloride
In, ultrasonic disperse 20min, the supersonic frequency of the ultrasonic disperse is 35kHz to get the bismuth chloride solution.
In the present embodiment, the preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 20 DEG C, is sent into super
Sound wave microwave combination reacts in instrument, carries out processing 6min, the processing item of the ultrasonic microwave composite reaction instrument at normal temperatures
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 40W, microwave frequency 2000MHz, and microwave power 40W obtains mixed liquor
A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 20 DEG C）In obtained mixed liquor A, institute
The rate for stating dropwise addition is 60 drops/minute, then continues to stir 40min with the stir speed (S.S.) of 300r/min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 6h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then placed in true
It is dried in empty drying box, the drying time is 4 hours, and the drying temperature is 65 DEG C, obtains mixture C；
4）By step 3）In be calcined in obtained mixture C merging Muffle furnace, the calcination temperature is 500 DEG C, the forging
The burning time is 5h, and heating rate is 6 DEG C/min, must calcine sample D；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, sodium hydrate aqueous solution is added, in 18 hours reaction time under the conditions of 120 DEG C, reaction terminates
Postcooling filters taking precipitate, is washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized, then to room temperature
Be placed in vacuum drying chamber dry, crush to get.
Embodiment 7
One kind being used for light-catalysed semiconductor nano material, including below according to the raw material of parts by weight：Stannous chloride methanol solution 8
Part, 30 parts of acid solution, 3 parts of bismuth chloride solution, 1 part of aqueous dimethylethanolamine, 80 parts of sodium hydrate aqueous solution.Wherein,
A concentration of 1mol/L of the sodium hydrate aqueous solution；A concentration of 0.005mol/L of the aqueous dimethylethanolamine；Institute
State a concentration of 3mol/L of oxalic acid；A concentration of 0.02mol/L of the bismuth chloride solution；The concentration of the stannous chloride methanol solution
For 0.4mol/L；It according to weight ratio is 2 that the acid solution, which is oxalic acid, deionized water and absolute ethyl alcohol,:3:10 ratio mixing
It forms；The preparation method of the bismuth chloride solution is ultrasonic disperse in the suitable polyethylene glycol for being added to bismuth chloride
20min, the supersonic frequency of the ultrasonic disperse are 35kHz to get the bismuth chloride solution.
In the present embodiment, the preparation method for light-catalysed semiconductor nano material, steps are as follows：
1）Stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 20 DEG C, is sent into super
Sound wave microwave combination reacts in instrument, carries out processing 6min, the processing item of the ultrasonic microwave composite reaction instrument at normal temperatures
Part is：Ultrasonic frequency is 30kHz, ultrasonic power 40W, microwave frequency 2000MHz, and microwave power 40W obtains mixed liquor
A；
2）Acid solution is weighed according to parts by weight, a dropping step 1 while stirring under the conditions of 20 DEG C）In obtained mixed liquor A, institute
The rate for stating dropwise addition is 60 drops/minute, then continues to stir 40min with the stir speed (S.S.) of 300r/min, obtains mixed liquid B；
3）By step 2）In obtained mixed liquid B ageing 6h, ethyl alcohol and ionized water are spent after filtering and is alternately cleaned, is then placed in true
It is dried in empty drying box, the drying time is 4 hours, and the drying temperature is 65 DEG C, obtains mixture C；
4）By step 3）In be calcined in obtained mixture C merging Muffle furnace, the calcination temperature is 500 DEG C, the forging
The burning time is 5h, and heating rate is 6 DEG C/min, must calcine sample D；
5）By step 4）In obtained calcining sample D be uniformly mixed with aqueous dimethylethanolamine, be placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, sodium hydrate aqueous solution is added, in 18 hours reaction time under the conditions of 120 DEG C, reaction terminates
Postcooling filters taking precipitate, is washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized, then to room temperature
Be placed in vacuum drying chamber dry, crush to get.
Prepared by the present invention has good photocatalytic activity for light-catalysed semiconductor nano material, passes through ultrasonic wave
Microwave cooperating combined effect is prepared most short up to 30 nanometers for light-catalysed semiconductor nano material length, while being urged in light
Change in activity rating, 60 minutes degradation rates can reach 96.0%, and catalytic activity is good, can be used for photocatalysis Decomposition inorganic matter
Nontoxic, tasteless carbon dioxide, water etc. are generated with organic matter, problem of environmental pollution is advantageously accounted for, before having a vast market
Scape.
The better embodiment of the present invention is explained in detail above, but the present invention is not limited to above-mentioned embodiment party
Formula, one skilled in the relevant art within the scope of knowledge, can also be without departing from the purpose of the present invention
Various changes can be made.There is no necessity and possibility to exhaust all the enbodiments.And it thus amplifies out apparent
Variation or variation be still in the protection scope of this invention.
Claims (10)
1. one kind being used for light-catalysed semiconductor nano material, which is characterized in that including below according to the raw material of parts by weight：Chlorination
5-12 parts of stannous methanol solution, 22-35 parts of acid solution, 1-5 parts of bismuth chloride solution, 0.5-1.5 parts of aqueous dimethylethanolamine,
70-85 parts of sodium hydrate aqueous solution；Wherein, the acid solution is oxalic acid solution, deionized water and absolute ethyl alcohol according to weight
Than being 2:3:10 ratio mixes.
2. according to claim 1 be used for light-catalysed semiconductor nano material, which is characterized in that including below according to weight
Measure the raw material of part：6-10 parts of stannous chloride methanol solution, 25-32 parts of acid solution, 2-4 parts of bismuth chloride solution, dimethylethanolamine
0.7-1.2 parts of aqueous solution, 75-82 parts of sodium hydrate aqueous solution.
3. according to claim 2 be used for light-catalysed semiconductor nano material, which is characterized in that including below according to weight
Measure the raw material of part：8 parts of stannous chloride methanol solution, 30 parts of acid solution, 3 parts of bismuth chloride solution, aqueous dimethylethanolamine 1
Part, 80 parts of sodium hydrate aqueous solution.
4. according to claim 1 or 2 or 3 be used for light-catalysed semiconductor nano material, which is characterized in that the hydrogen-oxygen
Change a concentration of 0.1-3mol/L of sodium water solution；A concentration of 0.001-0.01mol/L of the aqueous dimethylethanolamine.
5. according to claim 3 be used for light-catalysed semiconductor nano material, which is characterized in that the concentration of the oxalic acid
For 3mol/L；A concentration of 0.02mol/L of the bismuth chloride solution；A concentration of 0.4mol/L of the stannous chloride methanol solution.
6. according to claim 5 be used for light-catalysed semiconductor nano material, which is characterized in that the bismuth chloride solution
Preparation method be that ultrasonic disperse is carried out with the supersonic frequency of 20-45kHz in the suitable polyethylene glycol for being added to bismuth chloride
10-30min is to get the bismuth chloride solution.
7. a kind of preparation method for light-catalysed semiconductor nano material as described in claim 1-6 is any, feature
It is, steps are as follows：
1) stannous chloride methanol solution is weighed according to parts by weight, bismuth chloride solution is added while stirring under the conditions of 15-25 DEG C, be sent into
In ultrasonic microwave composite reaction instrument, processing 2-10min is carried out at normal temperatures, obtains mixed liquor A；
2) weigh acid solution according to parts by weight, a dropping step 1 while stirring under the conditions of 15-25 DEG C) in obtained mixed liquor
A continues to stir 30-50min, obtains mixed liquid B；
3) mixed liquid B obtained in step 2) is aged 4-10h, ethyl alcohol is spent after filtering and ionized water alternately cleans, is then put
Enter in vacuum drying chamber and be dried at 65 DEG C 4 hours, obtains mixture C；
4) by the mixture C merging Muffle furnaces obtained in step 3), 500 DEG C of progress are warming up to 6 DEG C/min of heating rate
It is calcined 4-6h, sample D must be calcined；
5) the calcining sample D obtained in step 4) is uniformly mixed with aqueous dimethylethanolamine, is placed in inner liner polytetrafluoroethylene
In the stainless steel cauldron of material, addition sodium hydrate aqueous solution, reaction time 18-20 hour under the conditions of 110-130 DEG C, instead
It is cooled to room temperature after answering, filters taking precipitate, washed with the diluted nitric acid aqueous solution of 0.1mol/L, then be washed with deionized water
Wash, be subsequently placed in vacuum drying chamber dry, crush to get.
8. the preparation method according to claim 7 for light-catalysed semiconductor nano material, which is characterized in that step
1) in, the treatment conditions of the ultrasonic microwave composite reaction instrument are：Ultrasonic frequency is 30kHz, ultrasonic power 20-
80W, microwave frequency 2000MHz, microwave power 20-80W.
9. the preparation method according to claim 8 for light-catalysed semiconductor nano material, which is characterized in that step
2) in, the stir speed (S.S.) of the stirring is 200-400r/min；The rate of the dropwise addition is 60 drops/minute.
10. a kind of being used for light-catalysed semiconductor nano material in preparing nano material as described in claim 1-6 is any
Purposes.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101204652A (en) * | 2007-12-19 | 2008-06-25 | 中国科学院上海硅酸盐研究所 | High efficiency semiconductor photocatalysis and preparation method thereof |
| US20110028305A1 (en) * | 2009-07-29 | 2011-02-03 | Korea Institute Of Machinery And Materials | Fabrication method for functional surface |
| CN102847546A (en) * | 2012-05-23 | 2013-01-02 | 上海师范大学 | Preparation method of SnO2/BiOCl heterojunction photocatalyst |
| CN103112894A (en) * | 2013-02-06 | 2013-05-22 | 长安大学 | Bismuth trioxide nanotubes prepared by microwave-assisted liquid-phase process and application thereof |
| CN103332739A (en) * | 2013-07-03 | 2013-10-02 | 南京理工大学 | Bi2Sn2O7 composite oxide with unique morphology and preparation method thereof |
| CN104096582A (en) * | 2014-06-26 | 2014-10-15 | 杭州电子科技大学 | Preparation method of phosphor-containing nanotube |
| CN105728004A (en) * | 2016-02-03 | 2016-07-06 | 三峡大学 | High-performance BiOCl/SnO2 heterojunction material and preparing method thereof |
| CN105948106A (en) * | 2016-06-29 | 2016-09-21 | 渤海大学 | Preparation method of narrow-bandgap stannic oxide semiconductor nanomaterial |
| CN106732629A (en) * | 2016-11-23 | 2017-05-31 | 南阳师范学院 | A kind of magnetic photocatalytic nano composite material of use bismuth oxide and nickel ferrite based magnetic loaded and preparation method thereof |
| CN107185564A (en) * | 2017-06-06 | 2017-09-22 | 河南师范大学 | A kind of spherical nucleocapsid BiOCl/SnO2Visible light catalyst and its preparation method and application |
-
2018
- 2018-06-15 CN CN201810618584.7A patent/CN108579722A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101204652A (en) * | 2007-12-19 | 2008-06-25 | 中国科学院上海硅酸盐研究所 | High efficiency semiconductor photocatalysis and preparation method thereof |
| US20110028305A1 (en) * | 2009-07-29 | 2011-02-03 | Korea Institute Of Machinery And Materials | Fabrication method for functional surface |
| CN102847546A (en) * | 2012-05-23 | 2013-01-02 | 上海师范大学 | Preparation method of SnO2/BiOCl heterojunction photocatalyst |
| CN103112894A (en) * | 2013-02-06 | 2013-05-22 | 长安大学 | Bismuth trioxide nanotubes prepared by microwave-assisted liquid-phase process and application thereof |
| CN103332739A (en) * | 2013-07-03 | 2013-10-02 | 南京理工大学 | Bi2Sn2O7 composite oxide with unique morphology and preparation method thereof |
| CN104096582A (en) * | 2014-06-26 | 2014-10-15 | 杭州电子科技大学 | Preparation method of phosphor-containing nanotube |
| CN105728004A (en) * | 2016-02-03 | 2016-07-06 | 三峡大学 | High-performance BiOCl/SnO2 heterojunction material and preparing method thereof |
| CN105948106A (en) * | 2016-06-29 | 2016-09-21 | 渤海大学 | Preparation method of narrow-bandgap stannic oxide semiconductor nanomaterial |
| CN106732629A (en) * | 2016-11-23 | 2017-05-31 | 南阳师范学院 | A kind of magnetic photocatalytic nano composite material of use bismuth oxide and nickel ferrite based magnetic loaded and preparation method thereof |
| CN107185564A (en) * | 2017-06-06 | 2017-09-22 | 河南师范大学 | A kind of spherical nucleocapsid BiOCl/SnO2Visible light catalyst and its preparation method and application |
Non-Patent Citations (8)
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