CN108568606A - A kind of MWT battery laser opening and deslagging method and equipment - Google Patents
A kind of MWT battery laser opening and deslagging method and equipment Download PDFInfo
- Publication number
- CN108568606A CN108568606A CN201711333963.3A CN201711333963A CN108568606A CN 108568606 A CN108568606 A CN 108568606A CN 201711333963 A CN201711333963 A CN 201711333963A CN 108568606 A CN108568606 A CN 108568606A
- Authority
- CN
- China
- Prior art keywords
- laser
- processing
- trepanning
- opening
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000012545 processing Methods 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 239000002893 slag Substances 0.000 claims abstract description 33
- 238000005086 pumping Methods 0.000 claims abstract description 11
- 238000003754 machining Methods 0.000 claims description 6
- 239000012634 fragment Substances 0.000 abstract description 18
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 239000002253 acid Substances 0.000 abstract description 6
- 230000006378 damage Effects 0.000 abstract description 6
- 239000003513 alkali Substances 0.000 abstract description 3
- 208000027418 Wounds and injury Diseases 0.000 abstract description 2
- 208000014674 injury Diseases 0.000 abstract description 2
- 238000003303 reheating Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 11
- 239000007791 liquid phase Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000012496 blank sample Substances 0.000 description 3
- 239000003518 caustics Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003685 thermal hair damage Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011440 grout Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to technical field of laser processing, and in particular to a kind of MWT battery laser opening and deslagging method and equipment.The present invention carries out small-scale laser slagging-off around laser opening, it is intended to remove the hot slag for being difficult to remove using acid and alkali corrosion near hole, while carry out the prerinse of dry type in device to hole.The equipment of the present invention includes laser processing module, processing platform module and pumping dirt module.The present invention slag removal, followed by laser opening process carry out, at this point, silicon chip and to slag have certain temperature and be more prone to remove, moreover, will not generate reheating generation processing injury, reduce fragment rate.
Description
Technical field
The invention belongs to technical field of laser processing, and in particular to a kind of MWT battery laser opening and deslagging method and set
It is standby.
Background technology
As the problems such as global energy shortage and environmental pollution, becomes increasingly conspicuous, solar energy power generating because its cleaning, safety,
The features such as convenient, efficient, the new industry for having become countries in the world common concern and giving priority to, efficient high-quality solar-electricity
Pool technology route is gradually diversified, passivation emitter and back surface (PERC), emitter passivation and full back side diffusion (PERT), gold
Belong to the solar cells such as perforation winding (MWT), the hetero-junctions (HIT) with intrinsic amorphous layer, interdigital formula back contacts (IBC), by
Gradually form different technology schools.
MWT battery, by the way that the contact electrode for being located at front side emitter pole is directed to silicon chip back side across silicon chip matrix, to subtract
Few shading-area, improves transfer efficiency.Its technique basic procedure is generally laser opening, cleaning go damage and making herbs into wool, p diffusions,
The back of the body is gone to tie and go PSG, SiNx antireflective films vapor deposition, silk-screen printing (grout slurry, positive silver, back of the body aluminium), sintering, clear side.
The laser opening technique of MWT battery is one of critical process of MWT battery, the high trepanning of laser opening technological requirement
Speed, precision and taper, to improve processing efficiency and processing effect.Simultaneously as laser processing can cause silicon chip itself
Certain thermal damage, and the silicon chip surface near processing hole generates some hot slags, these hot slags can cause fragment rate to increase
Adduction influences the technical problems such as minority carrier life time, and therefore, the selection and use to laser and laser boring technological parameter are suitable
When process reduce silicon chip thermal damage become an important research direction.
Invention content
In view of the deficiencies of the prior art, a kind of MWT battery laser opening of present invention offer and deslagging method and equipment, to silicon
After piece carries out laser opening, small-scale laser slagging-off is carried out around trepanning, it is intended to remove and be difficult to using acid near trepanning
Caustic corrosion and the hot slag removed, while the prerinse to carrying out dry type in trepanning.
A kind of MWT battery laser opening and deslagging method, include the following steps：Step 1: laser opening, boring method are
Contoured method；Step 2: laser removes the gred, after a trepanning completion of processing, immediately to the circular slagging-off region of trepanning outer rim
Laser slagging-off, the outer circle in region of removing the gred and the difference of inner circle radius are carried out as the 10~20% of trepanning radius.
Further, due to needing to carry out MWT battery the processing of multiple array holes, when processing, may be used with
Under a variety of methods.
The first, processes trepanning successively, and after all trepanning completion of processing, then the slagging-off region around device to hole is removed successively
Slag.
Second, a trepanning after processing is completed, removes the gred immediately, then, then carries out the processing in subsequent hole successively
And slagging-off.In the present invention, after machining a hole, remove the gred at once.In this way, when carrying out laser slagging-off, avoids and remove
Secondary temperature elevation and cooling when slag is to Thermal Stress caused by silicon chip, it is possible to reduce the hidden risk split of cell piece improves production
The quality of product.
A kind of MWT battery laser opening and deslagging method, further, the specific method of the laser opening are to be arranged
The output power of laser, repetition rate, pulse width, setting spot diameter, defocusing amount and sweep speed, control laser facula
Using trepanning center as the center of circle, spot radius is subtracted to be scanned on the circumference of radius using trepanning radius, run-down is calculated as one
It is secondary, repeatedly, complete the processing of trepanning.
The specific method of the laser slagging-off is the output power that laser is arranged, repetition rate, pulse width, setting
Spot diameter, defocusing amount and sweep speed, control laser facula are subtracted using trepanning center as the center of circle with the exradius in region of removing the gred
It goes on the circumference that spot radius is radius to be scanned slagging-off.
A kind of MWT battery laser opening and deslagging method, further, the step of laser opening in, laser is
1064nm lasers, output power are 45 ± 10W, and repetition rate 80-200KHz, pulse width is 100 ± 20ns, scanning speed
Degree is 1200 ± 500mm/s, and spot diameter is 35 ± 5 μm, and defocusing amount is-(200 ± 30) μm, and opening diameter is 200 μm.Laser
In the step of slagging-off, the outer circle in region of removing the gred and the difference of inner circle radius are 10~20 μm, and control laser power is 45~50W,
Repetition rate is 150~250KHz, and pulse width is 100 ± 20ns, and sweep speed is 1000~3000mm/s, and spot diameter is
30~40 μm, defocusing amount is-(50 ± 5) μm.
When carrying out the trepanning of step 1 to MWT solar battery sheets using laser, the high energy laser beam irradiation of focusing
On silicon chip of solar cell, the temperature at laser spot position is made to increase rapidly, moment can reach ten thousand degrees Celsius or more, work as temperature
When degree rises to temperature evaporate close to silicon sheet material, laser proceeds by the removal processing of silicon chip, at this point, silicon sheet material hair
There is liquid phase, and then generates gas phase to be evaporated in raw phase transformation.With the continuous rising of temperature, steam is with liquid phase substance with pole
High speed comes out from the fierce splash of liquid phase bottom, in splashings, there are about 4/5 liquid phase substance with high speed from opening
It is excluded in hole machined region, to complete the process of trepanning.
Therefore, in laser opening step, the fusing and evaporation of silicon sheet material are two most basic mistakes of laser opening
Journey, before also mention, during trepanning, in the splashings that steam is formed with liquid phase substance splash, about 4/5 liquid
Phase substance is excluded with high speed out of trepanning machining area, and other has been melted and the silicon chip that is not discharged in time
Material can again condense upon on the wall of trepanning.
When due to carrying out trepanning to silicon chip, hole could be punched by needing to take multiple scan processing, therefore, from laser processing
Some cannot be gasified totally the liquid phase substance excluded in region, and melting sputters on the silicon chip surface around trepanning, form slag.
Meanwhile can also have the silicon sheet material for failing to be discharged in time in the hole of processing and condense upon on hole wall again, form the burr in hole.
The slag and the burr in hole of silicon chip surface are the factor of influence MWT battery piece performance, meanwhile, laser is opened
Kong Shi also can make the surface around trepanning form certain thermal damage due to radiation effects.Usually after laser opening technique,
Also cleaning process to remove surface slag, hole inner burr, while playing the effect of damage.Usually when being cleaned, adopt
With the method for acid corrosion, caustic corrosion or hybrid corrosion, the burr in the slag of silicon chip surface and hole is removed.But due to
The slag of silicon chip surface is the hot slag that repeatedly processing accumulation is formed, more difficult in the acid corrosion or caustic corrosion for using the prior art
Processing is clean completely.
The presence of MWT battery surface slag can generate the performance of subsequent processing technology or battery very unfavorable shadow
It rings.It is in particular in, first, MWT battery further includes the process of screen printing electrode in the subsequent process, these slags are deposited
, during screen printing electrode, silicon chip is acted on by compression, these slags can become stress concentration point, printing
Swiped through journey, which is made, to fragmentate, and increases the fragment rate of MWT battery, is unfavorable for the control of production cost.Second, even if in printing process
In, the presence of these slags does not cause fragment, when carrying out electrode preparation, also results in contact resistance and becomes larger, effective electricity
Pole-face product is reduced, and reduces battery efficiency.
Certainly, clean in order to remove slag, the prior art also have using increase scavenging period or improve acid or
The method of the concentration of person's alkali still can lead to that the excessive of silicon chip substrate is thinned, waste silicon chip resource, increase fragment in this way
Rate, while increasing the cost of environmental protection.Moreover, excessive to silicon chip substrate is thinned, the service life of carrier can be reduced, the sun is influenced
The efficiency of energy battery.
Although one kind in laser cleaning and laser application, it is widely used in away rust by laser, historical relic is cleaned, is clear
Nuclear radiation pollution etc. is washed, in electronic component field, there is also clean ceramics etc. to the prior art.However,
Solar cell processing technique field, technical staff consider to laser to the thinning of silicon chip substrate, first can be to few son
Quantity has an impact, on the other hand, since the price of silicon chip is high, the thinned increase that can lead to cost to silicon chip substrate, therefore,
The method to remove the gred using laser is not will recognize that.
Present invention obviates the methods that laser removes the gred to entire silicon chip, only carry out small model to the upper surface around trepanning
The slagging-off enclosed, it is intended to remove the hot slag for being difficult to remove using acid and alkali corrosion near trepanning, while carry out dry type in device to hole
Prerinse.Since the process followed by laser opening process of removal slag carries out, at this point, silicon chip and having to slag certain
Temperature and be more prone to remove, moreover, will not generate reheating generation processing injury, fragment rate can be reduced.Into one
Step, the setting of the technological parameter of slagging-off of the invention is obtained according to the parameter of laser opening technique, can be directed to different beat
Different deslagging process parameters is arranged in hole technique, further reduces machining damage, reduces fragment rate.
It, will in order to make silicon chip fixation and convenient for positioning during carrying out laser opening and slagging-off to MWT battery
Cell piece is fixed on the negative pressure sucker of processing platform, is opened negative pressure and is adsorbed thereon silicon chip.
Meanwhile during laser opening and slagging-off, due to being method of the trepanning using contour machining, laser
It has residue when processing to fall, moreover, also having the dust and residue generated when processing above silicon chip.For this purpose, the present invention designs
Hole is arranged in the position that silicon chip trepanning is corresponded on laser processing platform and negative pressure sucker, and below processing platform and processing is flat
Platform oblique upper carries out taking out dirt processing.
The present invention also provides a kind of laser opening and slag removal equipments, including laser processing module, processing platform module and pumping
Dirt module.
Laser processing module include set gradually to emit the laser of laser, changing laser outbound course simultaneously
Led to the speculum on the workpieces processing surface, beam expanding lens to change beam diameter and the angle of divergence, big to adjust hot spot
It is small, improve the diaphragm of light beam performance, the galvanometer to complete invisible scanning path and laser is carried out arrangement focusing, realize
The field lens of the laser facula of sufficiently high power density is formed in entire working position.
The processing platform module includes processing platform and the negative pressure sucker that is arranged on, the processing platform and negative pressure
Hole is set on the corresponding silicon chip position of opening of sucker.Negative pressure sucker avoids cell piece from moving to adsorb cell piece,
Convenient for positioning.
It is provided on processing platform and negative pressure sucker and waits for the corresponding hole of position of opening with cell piece.Taking out dirt module includes
First, which takes out dirt module and second, takes out dirt module.The first pumping dirt module is provided with below processing platform, to be provided in processing
Negative pressure takes out dirt, the residue extraction fallen downwards when by trepanning.The second pumping dirt module is provided with above processing platform side, to incite somebody to action
The dust generated when trepanning and slagging-off and residue extraction.
The beneficial effects of the invention are as follows：1. method using the present invention carries out the laser opening of MWT battery, the precision in hole
Height, difference≤10% after the small same design aperture punching of taper, hole taper (the ratio between upper and lower side aperture difference and silicon wafer thickness)≤
20%.2. method using the present invention carries out laser opening and the slagging-off of MWT battery, the slag around trepanning has been effectively removed,
The fragment rate of MWT battery piece processing is greatly reduced, the especially fragment rate of screen printing step, fragment rate is dropped to by 1 ‰
0.5‰.3. method using the present invention carries out the laser opening of MWT battery and slagging-off, the processing step of slagging-off not only act as
The effect of slagging-off has little effect silicon chip minority carrier life moreover, having carried out that damage is gone to pre-process to silicon chip.4. using this
The method of invention carries out the laser opening of MWT battery and slagging-off, emitter region form good Ohmic contact, help to improve short circuit
Electric current and open-circuit voltage.
Description of the drawings
Fig. 1 is MWT battery chip architecture schematic diagram.
Fig. 2 is the scanning process schematic diagram of laser opening.
Fig. 3 is the scanning process schematic diagram of laser slagging-off.
Fig. 4 is the laser opening of the present invention and the structural schematic diagram of slag removal equipment.
Fig. 5 is the silicon chip shape appearance figure of embodiment 1.
Fig. 6 is the silicon chip shape appearance figure of comparative example.
Figure includes, and 1, laser processing module, 2, processing platform module, 3, take out dirt module, 21, processing platform, 22, negative pressure
Sucker, 23, hole, 31, first takes out dirt module, and 32, second takes out dirt module.
Specific implementation mode
Technical scheme of the present invention is described further below in conjunction with the drawings and the specific embodiments.
The present invention is using the silicon chip processed as 160~220 μm of thickness, for the cell piece that area is 5 cun or 6 cun, specifically
Be 125mm × 125mm, 156mm × 156mm, monocrystalline, polycrystalline, for square piece or non-square piece silicon chip, to silicon chip open 16 or
25 trepannings of person, opening diameter are 200 μm, are the schematic diagram of the silicon chip in 16 holes of processing in attached drawing 1.
As shown in Figures 2 and 3, MWT battery laser opening of the invention and deslagging method, include the following steps：
Step 1: laser opening, scanning process is as shown in Figure 2.
The output power of laser, repetition rate, pulse width be set, setting spot diameter, defocusing amount and sweep speed,
First trepanning is processed, boring method is contoured method.
Specifically, it is 45 ± 10W that laser, which uses 1064nm lasers, output power, repetition rate is 80~200KHz,
Pulse width be 100 ± 20ns, sweep speed be 1200 ± 500mm/s, spot diameter be 35 ± 5 μm, defocusing amount be-(200 ±
30) μm, opening diameter is 200 μm.
Laser facula is controlled using trepanning center as the center of circle, trepanning radius subtracts to be swept on the circumference that spot radius is radius
It retouches, run-down, is calculated as once, repeatedly, completing the processing of trepanning.
Step 2: laser removes the gred, scanning process is as shown in Figure 3.
The output power of laser, repetition rate, pulse width be set, setting spot diameter, defocusing amount and sweep speed,
It controls around beam spot scans osseotomy site, carries out laser slagging-off, slagging-off regional extent is apart from 10~20 μm of trepanning outer rim
Annular region.
Specific method is that control laser power is 45~50W, and repetition rate is 150~250KHz, and pulse width is
100 ± 20ns, sweep speed are 1000~3000mm/s, and spot diameter is 30~40 μm, and defocusing amount is-(50 ± 5) μm.
Laser facula is controlled using trepanning center as the center of circle, spot radius is subtracted as radius using the exradius in region of removing the gred
It is scanned on circumference, run-down.
Step 3: repeating step 1 and step 2, it is sequentially completed laser opening and the slagging-off of MWT battery.
Referring to Fig. 4, MWT battery laser opening of the invention and slag removal equipment, including including laser machining module 1, processing
Platform module 2 and pumping dirt module 3.
Laser processing module 1 include set gradually to emit the laser of laser, changing laser outbound course
And led to the speculum on workpieces processing surface, the beam expanding lens to change beam diameter and the angle of divergence, adjusting hot spot
Size improves the diaphragm of light beam performance, the galvanometer to complete invisible scanning path and laser is carried out arrangement focusing, real
Entire working position forms the field lens of the laser facula of sufficiently high power density now.
The processing platform module 2 includes processing platform 21 and the negative pressure sucker 2 being arranged on, the processing platform 21
With setting hole 23 on 2 corresponding silicon chip position of opening of negative pressure sucker.Negative pressure sucker 2 avoids electricity to adsorb cell piece
Pond piece movement, convenient for positioning.
It is provided on processing platform 21 and negative pressure sucker 2 and waits for the corresponding hole of position of opening 23 with cell piece.Take out dirt mould
Group 3 includes that the first pumping dirt module 31 and second takes out dirt module 32.It is provided with the first pumping dirt module 31 below processing platform 21, uses
Dirt is taken out to provide negative pressure in processing, the residue extraction fallen downwards when by trepanning.Is provided with above 21 side of processing platform
Two take out dirt module 32, and the dust and residue generated when to by trepanning and slagging-off is extracted out.The concrete form for taking out dirt module 3 does not limit
The pumping dirt device of system, every prior art can be used.
It is specific embodiment below
Embodiment 1
A kind of MWT battery laser opening and deslagging method, include the following steps,
Step 1: the step of laser opening
Laser uses 1064nm lasers, and output power 45W, repetition rate 120KHz, pulse width is
100ns, sweep speed 1200mm/s, spot diameter are 35 μm, and defocusing amount is -200 μm, and a diameter of 200 μm of punching controls light
Spot subtracts spot radius to be scanned on the circumference of radius centered on by trepanning center, using trepanning radius, run-down meter
It is primary, is repeated eight times, completes the processing of trepanning.
Step 2: the step of laser removes the gred
Laser output power is 50W, repetition rate 250KHz, pulse width 100ns, and sweep speed is
2000mm/s, spot diameter are 30 μm, and defocusing amount is -50 μm, region of removing the gred ranging from apart from the annulus of 10 μm of trepanning outer rim
Region subtracts spot radius to be scanned on the circumference of radius, run-down using the exradius in region of removing the gred.
Step 3: repeating step 1 and step 2, it is sequentially completed laser opening and the slagging-off of MWT battery.
Specifically, when carrying out laser opening and laser removes the gred, the negative pressure of negative pressure sucker 2 is opened, realizes the suction to silicon chip
It is attached, avoid cell piece from moving, convenient for positioning.Start first and take out dirt module 31 and second and takes out dirt module 32, it will be when trepanning and slagging-off
When fall on processing platform module 2 residue and the dust that generates of when laser processing and residue extraction.
Embodiment 2 is similar with embodiment 1 to embodiment 5, and difference lies in technological parameter, the techniques of embodiment 1 to embodiment 5
Parameter is shown in Table 1.
Comparative example is similar to Example 1, and the laser slagging-off difference lies in comparative example without step 2 is directly sequentially completed
The processing of laser opening.The technological parameter of comparative example is shown in Table 1.
1 embodiment list of table
It is experiment and the test result of embodiment and comparative example below.
In order to detect the experiment effect of invention, having carried out silicon chip pattern, thickness thinning, silicon chip pattern, minority carrier life time and add
The test of work fragment rate.
Experimentation is as follows：
1, silicon chip pattern is taken a picture.
As a result see Fig. 5 and Fig. 6.The silicon chip trepanning and the shape appearance figure after slagging-off that Fig. 5 is embodiment 1, Fig. 6 is the silicon of comparative example
Shape appearance figure after piece trepanning.From 6 it can be seen from the figure thats, the silicon chip of comparative example is visible many mottled around trepanning without removing the gred
Slag, from figure 5 it can be seen that having no mottled slag around silicon chip trepanning of the embodiment 1 by slagging-off.The comparison of two figures can be with
Find out under same laser opening technique, after carrying out laser slagging-off, the slag quantity around trepanning is more apparent than what is do not removed the gred
It reduces, illustrates that the method for the present invention can effectively remove the slag around trepanning.
2, thickness thinning, silicon chip pattern, minority carrier life time and the experiment for processing fragment rate.
Experimental subjects includes the silicon chip after the laser opening that embodiment 1 to embodiment 5 obtains and laser slagging-off, comparative example
Laser opening but the silicon chip and blank sample for not carrying out laser slagging-off, blank sample are the silicon to remove the gred without laser opening and laser
Piece.
Experimental method：Cleaning and texturing is carried out first.
Cleaning method includes two kinds, the first cleaning method is directed to all experimental subjects.
Cleaning method is that 1min is cleaned in 80 DEG C, a concentration of 15% sodium hydroxide solution, then, at room temperature dense
Degree finally, cleans 1min in 10% hydrofluoric acid at room temperature to clean 10min in 15% hydrochloric acid solution.By embodiment 1
Above-mentioned experiment is carried out respectively to embodiment 5, is calculated as experimental example 1 to experimental example 5, comparative example and experimental example are subjected to above-mentioned reality respectively
It tests, is calculated as experimental example 6 and experimental example 7.
Embodiment 1 to embodiment 5 corresponds to experimental example 1 to experimental example 5 respectively, and comparative example 1 corresponds to experimental example 6, blank sample pair
It answers
Experimental example 7.
Second, cleaning method is directed to comparative example.
Cleaning method is that 1min is cleaned in 80 DEG C, a concentration of 20% sodium hydroxide solution, then, at room temperature dense
Degree finally, cleans 2min in 10% hydrofluoric acid at room temperature to clean 10min in 15% hydrochloric acid solution.
Comparative example silicon chip is subjected to above-mentioned cleaning, is calculated as experimental example 8.
After above-mentioned experiment, test below is carried out to experimental example.
(1) thickness thinning is tested.
Thickness thinning test is tested using contact or non-contact thickness gauge, and the present invention uses contact thickness measuring
Instrument is tested, and it includes No.1 position and No. two positions, the annulus that the No.1 position is 10~20 μm around trepanning to take point range
Domain, No. two positions are the positions for removing trepanning position and No.1 position, and the relative deviation of No.1 position and No. two positions is shown in Table 2.Test sample amount
It it is 1000, the random pixel selecting quantity of every difference is 3.
(2) minority carrier lifetime.
The test method of minority carrier life time is tested, test result by Sinton WCT-120 minority carrier lifetime testers
It is shown in Table 2, when test, it includes No.1 position and No. two positions, the annular that the No.1 position is 10~20 μm around trepanning to take point range
Range, No. two positions are the positions for removing trepanning position and No.1 position, and the relative deviation of No.1 position and No. two positions is shown in Table 2.Test sample
Amount is 1000, and the random pixel selecting quantity of every difference is 3.
(3) fragment rate is tested.P diffusions are carried out according to the technique of the prior art, the back of the body is gone to tie and go PSG, SiNx antireflective films to steam
Plating, is sintered, the technique of clear side silk-screen printing (grout slurry, positive silver, back of the body aluminium), and technical process is consistent.
For the above statistics for carrying out fragment rate.Fragment rate is the fragment for producing the fragment of 10000 generations and testing
Rate, test result are shown in Table 2.
2 experimental example test result table of table
The method using the present invention it can be seen from above-mentioned experimental result, after carrying out laser opening and slagging-off to silicon chip, then
MWT battery production is carried out according to common process, and the influence very little for minority carrier life time and does not carry out laser and removes at laser slagging-off region
The minority carrier life time in the region of slag to deviation be ten thousand/it is several.Moreover, method using the present invention, to silicon chip into laser opening and
After slagging-off, the fragment rate in process can be reduced.
Claims (7)
1. a kind of MWT battery laser opening and deslagging method, include the following steps：Step 1: laser opening, boring method is wheel
The wide method of forming；Step 2: laser removes the gred, after a trepanning completion of processing, immediately to the circular slagging-off region of trepanning outer rim into
Row laser removes the gred, and the outer circle in region of removing the gred and the difference of inner circle radius are the 10~20% of trepanning radius.
2. MWT battery laser opening according to claim 1 and deslagging method, it is characterised in that：The laser opening
Specific method is the output power that laser is arranged, repetition rate, pulse width, setting spot diameter, defocusing amount and scanning speed
Degree, control laser facula subtract spot radius to be scanned on the circumference of radius using trepanning center as the center of circle, using trepanning radius,
Run-down is calculated as once, repeatedly, completing the processing of trepanning；
The specific method of the laser slagging-off is the output power that laser is arranged, repetition rate, pulse width, and hot spot is arranged
Diameter, defocusing amount and sweep speed, control laser facula subtract light using trepanning center as the center of circle with the exradius in region of removing the gred
Spot radius be radius circumference on be scanned slagging-off.
3. MWT battery laser opening according to claim 2 and deslagging method, it is characterised in that：The step of laser opening
In, laser be 1064nm lasers, output power be 45 ± 10W, repetition rate 80-200KHz, pulse width be 100 ±
20ns, sweep speed are 1200 ± 500mm/s, and spot diameter is 35 ± 5 μm, and defocusing amount is-(200 ± 30) μm, opening diameter
It is 200 μm；
In the step of laser removes the gred, the outer circle in region of removing the gred and the difference of inner circle radius are 10~20 μm, and control laser power is
45~50W, repetition rate are 150~250KHz, and pulse width is 100 ± 20ns, and sweep speed is 1000~3000mm/s, light
Spot diameter is 30~40 μm, and defocusing amount is-(50 ± 5) μm.
4. MWT battery laser opening according to any one of claims 1 to 3 and deslagging method, it is characterised in that：Silicon when processing
Piece is placed on the negative pressure sucker on processing platform.
5. MWT battery laser opening according to any one of claims 1 to 3 and deslagging method, it is characterised in that：When processing,
Below processing platform and the pumping dirt module of oblique upper carries out taking out dirt processing.
6. a kind of MWT battery laser opening and slag removal equipment, it is characterised in that：Including laser machining module, processing platform module
With pumping dirt module.
7. laser opening according to claim 6 and slag removal equipment, it is characterised in that：The laser processing module include according to
Laser, speculum, beam expanding lens, diaphragm, galvanometer and the field lens of secondary placement；
The processing platform module includes processing platform and the negative pressure sucker that is arranged on, the processing platform and negative pressure sucker
Hole is set on corresponding silicon chip position of opening；
It includes first for being set to the second pumping dirt module of processing platform oblique upper and being set to below processing platform to take out dirt module
Take out dirt module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711333963.3A CN108568606A (en) | 2017-12-11 | 2017-12-11 | A kind of MWT battery laser opening and deslagging method and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711333963.3A CN108568606A (en) | 2017-12-11 | 2017-12-11 | A kind of MWT battery laser opening and deslagging method and equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108568606A true CN108568606A (en) | 2018-09-25 |
Family
ID=63575917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711333963.3A Pending CN108568606A (en) | 2017-12-11 | 2017-12-11 | A kind of MWT battery laser opening and deslagging method and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108568606A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109822237A (en) * | 2018-12-26 | 2019-05-31 | 惠州市金百泽电路科技有限公司 | A kind of high out of roundness through-hole laser processing for ceramic circuit board |
| CN111906094A (en) * | 2020-07-29 | 2020-11-10 | 中国南方电网有限责任公司超高压输电公司柳州局 | Laser cleaning agent rust removal annular joint device |
| CN112122797A (en) * | 2020-09-24 | 2020-12-25 | 松山湖材料实验室 | Laser processing slag removal method, system, computer device and readable storage medium |
| CN112599637A (en) * | 2020-12-09 | 2021-04-02 | 成都晔凡科技有限公司 | Method for manufacturing solar cell piece and solar cell piece |
| CN114012268A (en) * | 2021-10-13 | 2022-02-08 | 浙江师范大学 | Photovoltaic synergistic microstructure ultraviolet laser processing device and method |
| CN114900961A (en) * | 2022-04-18 | 2022-08-12 | 珠海景旺柔性电路有限公司 | Machining method for corner hole of PTFE circuit board |
| CN115677387A (en) * | 2022-11-01 | 2023-02-03 | 赛创电气（铜陵）有限公司 | Method for removing slag generated by laser drilling of ceramic substrate |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05318396A (en) * | 1992-05-22 | 1993-12-03 | Hitachi Seiko Ltd | Drilling device for flexible substrate |
| JP2002217551A (en) * | 2000-11-16 | 2002-08-02 | Toppan Printing Co Ltd | Multilayer wiring substrate and its manufacturing method, and laser drill device |
| JP2008173652A (en) * | 2007-01-16 | 2008-07-31 | Aisin Seiki Co Ltd | Deburring method |
| KR20100025297A (en) * | 2008-08-27 | 2010-03-09 | 주식회사 이오테크닉스 | Drilling apparatus and drilling method |
| CN104439724A (en) * | 2014-11-10 | 2015-03-25 | 北京大学东莞光电研究院 | Method for machining conductive channels on ceramic substrate through lasers |
| CN104741799A (en) * | 2015-04-21 | 2015-07-01 | 大族激光科技产业集团股份有限公司 | Laser hole drilling method of hard and brittle material |
| CN105081579A (en) * | 2015-08-04 | 2015-11-25 | 大族激光科技产业集团股份有限公司 | Laser machining method |
| CN105458530A (en) * | 2016-01-29 | 2016-04-06 | 孙树峰 | Device and method for machining aviation engine blade film hole through femtosecond lasers |
-
2017
- 2017-12-11 CN CN201711333963.3A patent/CN108568606A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05318396A (en) * | 1992-05-22 | 1993-12-03 | Hitachi Seiko Ltd | Drilling device for flexible substrate |
| JP2002217551A (en) * | 2000-11-16 | 2002-08-02 | Toppan Printing Co Ltd | Multilayer wiring substrate and its manufacturing method, and laser drill device |
| JP2008173652A (en) * | 2007-01-16 | 2008-07-31 | Aisin Seiki Co Ltd | Deburring method |
| KR20100025297A (en) * | 2008-08-27 | 2010-03-09 | 주식회사 이오테크닉스 | Drilling apparatus and drilling method |
| CN104439724A (en) * | 2014-11-10 | 2015-03-25 | 北京大学东莞光电研究院 | Method for machining conductive channels on ceramic substrate through lasers |
| CN104741799A (en) * | 2015-04-21 | 2015-07-01 | 大族激光科技产业集团股份有限公司 | Laser hole drilling method of hard and brittle material |
| CN105081579A (en) * | 2015-08-04 | 2015-11-25 | 大族激光科技产业集团股份有限公司 | Laser machining method |
| CN105458530A (en) * | 2016-01-29 | 2016-04-06 | 孙树峰 | Device and method for machining aviation engine blade film hole through femtosecond lasers |
Non-Patent Citations (1)
| Title |
|---|
| 关振中: "《激光加工工艺手册》", 30 November 2007 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109822237A (en) * | 2018-12-26 | 2019-05-31 | 惠州市金百泽电路科技有限公司 | A kind of high out of roundness through-hole laser processing for ceramic circuit board |
| CN111906094A (en) * | 2020-07-29 | 2020-11-10 | 中国南方电网有限责任公司超高压输电公司柳州局 | Laser cleaning agent rust removal annular joint device |
| CN111906094B (en) * | 2020-07-29 | 2022-09-20 | 中国南方电网有限责任公司超高压输电公司柳州局 | Laser cleaning agent rust removal annular joint device |
| CN112122797A (en) * | 2020-09-24 | 2020-12-25 | 松山湖材料实验室 | Laser processing slag removal method, system, computer device and readable storage medium |
| CN112599637A (en) * | 2020-12-09 | 2021-04-02 | 成都晔凡科技有限公司 | Method for manufacturing solar cell piece and solar cell piece |
| CN112599637B (en) * | 2020-12-09 | 2022-05-31 | 成都晔凡科技有限公司 | Method for manufacturing solar cell piece and solar cell piece |
| CN114012268A (en) * | 2021-10-13 | 2022-02-08 | 浙江师范大学 | Photovoltaic synergistic microstructure ultraviolet laser processing device and method |
| CN114012268B (en) * | 2021-10-13 | 2023-06-16 | 浙江师范大学 | Ultraviolet laser processing device and method for photovoltaic synergistic microstructure |
| CN114900961A (en) * | 2022-04-18 | 2022-08-12 | 珠海景旺柔性电路有限公司 | Machining method for corner hole of PTFE circuit board |
| CN115677387A (en) * | 2022-11-01 | 2023-02-03 | 赛创电气（铜陵）有限公司 | Method for removing slag generated by laser drilling of ceramic substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108568606A (en) | A kind of MWT battery laser opening and deslagging method and equipment | |
| CN101404307A (en) | Production method for polycrystalline silicon solar cell texture surface | |
| Hallam et al. | Record large-area p-type CZ production cell efficiency of 19.3% based on LDSE technology | |
| US9419165B2 (en) | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication | |
| Naumann et al. | Potential-induced degradation at interdigitated back contact solar cells | |
| US20170236961A1 (en) | Flat top laser beam processing for making a solar cell substrate | |
| CN102201493A (en) | High-speed precision crystal silicon laser etching apparatus and method | |
| CN101652866B (en) | Method for manufacturing photovoltaic device | |
| CN105206711B (en) | A kind of solaode slice processing method | |
| CN101777606A (en) | Crystalline silicon solar battery selective diffusion process | |
| US20140256068A1 (en) | Adjustable laser patterning process to form through-holes in a passivation layer for solar cell fabrication | |
| JP2011056514A (en) | Method of manufacturing photoelectric conversion element | |
| CN105185849B (en) | A kind of back contact solar cell and preparation method thereof | |
| CN103426736A (en) | Laser chemical order controllable preparation method of monocrystalline silicon inverted pyramid suede | |
| CN102569519B (en) | Method for removing back field of MWT (Metal Wrap Through) solar battery with back filed structure | |
| CN110379884B (en) | Battery surface laser positioning point and preparation method of PERC battery | |
| CN107068807A (en) | A kind of PERC battery preparation methods that technique is thrown based on back side alkali | |
| CN107731940B (en) | PERC polycrystalline silicon solar cell and preparation method thereof | |
| CN106024933A (en) | Crystalline silicon solar battery back side local double mass impurity doped structure and doping method thereof | |
| CN111370391A (en) | Novel SE Mark point pattern structure and preparation method thereof | |
| CN102593241A (en) | Crystalline silicon solar energy battery and method for etching edge of crystalline silicon solar energy battery | |
| CN102122685B (en) | Method for preparing crystalline silicon solar battery having emitter wrapping structure | |
| CN111009588A (en) | PERC battery and preparation method thereof | |
| CN108682701B (en) | Solar cell and manufacturing process thereof | |
| TW201222838A (en) | Method and application for the solar cell ID scribe during screen printing process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180925 |