CN108559975B - Space catalytic chemical vapor deposition equipment - Google Patents
Space catalytic chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN108559975B CN108559975B CN201810120398.0A CN201810120398A CN108559975B CN 108559975 B CN108559975 B CN 108559975B CN 201810120398 A CN201810120398 A CN 201810120398A CN 108559975 B CN108559975 B CN 108559975B
- Authority
- CN
- China
- Prior art keywords
- gas
- reaction
- catalyst
- substrate
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004050 hot filament vapor deposition Methods 0.000 title claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 102
- 239000003054 catalyst Substances 0.000 claims abstract description 73
- 238000006243 chemical reaction Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000012495 reaction gas Substances 0.000 claims abstract description 41
- 230000033001 locomotion Effects 0.000 claims abstract description 19
- 238000009826 distribution Methods 0.000 claims abstract description 7
- 230000004807 localization Effects 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 28
- 239000002131 composite material Substances 0.000 claims description 17
- 238000000605 extraction Methods 0.000 claims description 17
- 230000000737 periodic effect Effects 0.000 claims description 13
- FVTVMQPGKVHSEY-UHFFFAOYSA-N 1-AMINOCYCLOBUTANE CARBOXYLIC ACID Chemical compound OC(=O)C1(N)CCC1 FVTVMQPGKVHSEY-UHFFFAOYSA-N 0.000 claims description 8
- 230000003197 catalytic effect Effects 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000006557 surface reaction Methods 0.000 claims 1
- 238000006555 catalytic reaction Methods 0.000 abstract description 21
- 238000013461 design Methods 0.000 abstract description 9
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 12
- 239000000376 reactant Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 6
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920001610 polycaprolactone Polymers 0.000 description 4
- 239000004632 polycaprolactone Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000003222 pyridines Chemical class 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910003826 SiH3Cl Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Catalysts (AREA)
Abstract
The space catalytic chemical vapor deposition equipment comprises a gas inlet device, wherein the gas inlet device comprises: the reaction gas outlet and the catalyst outlet which are conveyed to the substrate, and the isolating device are distributed around the catalyst gas, the isolating device enables the catalyst gas to be accurately controlled in the space enclosed by the isolating device, and the mixed reaction of the two reaction gases in the space where the catalyst is concentrated realizes the localization in the space; based on the design of the invention, the concentration distribution of the catalyst in a localized space is controlled through hardware design, and the entering amount of reaction gas on two sides diffusing to the space is controlled, so that the reaction rate of catalytic reaction in the localized space can be accurately controlled, and a film is uniformly deposited on the substrate through the relative motion between the gas inlet device and the substrate.
Description
Technical Field
The invention relates to space catalytic chemical vapor deposition equipment, in particular to space catalytic chemical vapor deposition equipment with reaction deposition rate accurately adjustable, wherein reaction gas is subjected to reaction deposition in a local space where a catalyst is located.
Background
The catalytic reaction in the chemical reaction is the catalytic refining of the base stones in the modern chemical energy industry, such as petroleum and coal, and the catalytic reaction is used for the polymerization of most monomers of organic polymers in the downstream organic plastic industry.
The application of catalytic reaction to chemical vapor deposition equipment for preparing various functional films has been the hot point of research. In a broad sense, a catalytic reaction is one that reduces the activation energy of a chemical reaction, typically from extreme conditions such as high temperature, high pressure, etc. to moderate temperatures and pressures. The same object can be achieved by using physical methods such as plasma catalysis, photocatalysis, microwave catalysis and other technologies, and the chemical vapor deposition equipment can be classified into physical catalytic chemical vapor deposition equipment. However, the uniform deposition film forming area required by some industries is larger and larger, the cost of the physical catalytic device is higher and the design difficulty is higher and higher.
The direct application of the catalyst is exemplified by a metal hot wire chemical vapor deposition apparatus, which uses the catalytic property of the metal hot wire, and the suitable catalytic reaction is only a part, so the application range is not wide. Gaseous catalysts are a large class of catalysts, typically metal organic compounds, small organic molecules such as pyridines, azacyclo-carbenes, etc., and can range over most organic polymerization catalysis. For the use of gaseous catalysts, no mass production chemical vapor deposition equipment has been associated for the time being. If no special design is provided, the gaseous catalyst is directly introduced into the chemical vapor deposition equipment, so that the reaction deposition film is not uniform, the catalyst can reduce the reaction activation energy and accelerate the reaction speed, the concentration greatly influences the reaction deposition rate, and the airflow field distribution needs special treatment to effectively and uniformly deposit the film.
Therefore, the technical scheme of the invention is provided for overcoming the problems. Based on the design of the invention, catalyst gas is inserted between two reaction gases, the gas outlets are arranged in an array form, the hardware design around the catalyst gas enables the distribution of the catalyst gas in a local space to be accurately controlled, and simultaneously controls the entering amount of the reaction gases at two sides diffusing to the space, so that the reaction rate of catalytic reaction in the local space can be accurately controlled, and the film is uniformly deposited on a substrate through the relative motion between the gas inlet device and the substrate. Therefore, the chemical vapor deposition equipment with the accurate and adjustable deposition rate of the catalytic reaction in the local space is realized by using the gaseous catalyst.
Disclosure of Invention
The invention aims to provide space catalytic chemical vapor deposition equipment which has the advantages that reaction gas is reacted and deposited in a local space where a catalyst is located, and the reaction deposition rate is accurately adjustable.
The space catalytic chemical vapor deposition equipment comprises:
the gas inlet device comprises a first gas outlet and is used for conveying the reaction gas A to the substrate; the second gas outlet is used for conveying the catalyst gas C to the substrate; a third gas outlet for delivering a reactant gas B to the substrate, and a fourth gas outlet for delivering a catalyst gas C to the substrate.
The isolation devices are distributed around the catalyst gas C, the isolation devices enable the catalyst gas C to be accurately controlled in the space surrounded by the air extraction groove device, and the spatial localization of the mixing reaction of the two reaction gases in the space where the catalyst is concentrated is realized;
the catalytic reaction deposition localized space means that the deposition reaction of the reaction gas A and the reaction gas B occurs in the localized space where the catalyst gas is located. In the localized space, the reaction gas A and the reaction gas B are mixed under the action of a catalyst to participate in the deposition reaction on the substrate, and one of the three gases is not available; outside the localized space, reactant gas a and reactant gas B do not participate in reactive deposition on the substrate.
(ACBC). The three gases required by the periodic structure of the formula and four gas outlets and isolating devices distributed around the gas outlets of the catalyst form a minimum period composite structure unit, wherein the gas outlets (ACBC) m are more than or equal to 1.
(ACB) is the smallest building block.
The equipment is provided with a plurality of groups of minimum period composite structure units, the minimum period composite structure units are distributed according to needs, the gas outlet at the outermost side of the equipment is reaction gas A or B, and the gas outlet distribution comprises (ACBC) mA (m is more than or equal to 1) and (ACBC) nACB (n is more than or equal to 0).
And the driving device is used for driving the air inlet of the air inlet device and the base material to realize relative motion, so that uniform deposition of the localized space reaction deposition in the relative motion direction is realized. The driving device is used for driving a periodic composite structure unit (namely an air inlet device and an air exhaust groove device distributed around an air outlet of the catalyst) or a substrate of the space catalytic chemical vapor deposition equipment; the driving device is used for enabling the air inlet device and the substrate to form relative motion, and the relative motion comprises three relative motion forms, namely, the driving device drives the substrate, and the periodic composite structure unit of the space catalytic type chemical vapor deposition equipment is kept static; secondly, the driving device drives the periodic composite structure unit of the space catalytic chemical vapor deposition equipment, and the base material is kept static; and driving the periodic composite structure unit and the substrate of the space catalytic chemical vapor deposition equipment by the driving device, wherein the periodic composite structure unit and the substrate of the space catalytic chemical vapor deposition equipment move.
The air extraction groove device comprises air extraction grooves distributed around a reaction gas outlet, the air extraction grooves are communicated with an air extraction pipeline, the air extraction grooves comprise but are not limited to one group, two groups or a plurality of groups of air extraction groove combinations, the air extraction grooves extract the reaction gas participating in the reaction, the air extraction grooves form a specific space for the reaction by extracting the reaction gas, the extracted reaction gas is discharged out of the chemical vapor deposition equipment along the air extraction pipe, the opening width of the air extraction grooves along the relative movement direction of the substrate and the air inlet of the air inlet device is 1 × 10-3m to 1 × 10-1m, catalyst gas outlet and the center of the opening of the gas extraction groove around the catalyst gasThe spacing of the ports was 2 × 10- 3m to 2 × 10-1And m, controlling the pumping speed to limit the mixed reaction of the reaction gas A and the reaction gas B in the local space where the pumping groove is located.
In embodiments of the present invention, the carrier gas of the reactant gas corresponding to the catalyst gas includes, but is not limited to, H2、N2Ar, or a mixture thereof.
In the embodiment of the present invention, the distance between the gas outlets of the reaction gas and the catalyst gas and the substrate to be processed is 1 × 10-4m to 2 × 10-1m, the spacing is suitably selected according to the reaction requirements.
In the embodiment of the present invention, the distance between the reaction gas and the catalyst gas outlet is 1 × 10-3m to 1m, with a spacing being suitably selected according to the reaction requirements.
In the embodiment of the invention, the relative movement rate of the air inlet device and the substrate is 1 × 10-3m/s to 10m/s, the relative movement rate being suitably preferred according to the reaction requirements.
In the embodiment of the present invention, the reaction deposition temperature is 1K to 2000K, and a temperature is suitably preferred according to the reaction requirement.
In an embodiment of the invention, the reaction process pressure is 1 × 10-8Pa to 1 × 106Pa, and a pressure is suitably selected depending on the reaction requirements.
In an embodiment of the present invention, the reaction deposition rate is 1 × 10-11m/s to 1 × 10-6m/s, the deposition rate is suitably selected according to the reaction requirements.
The invention has the beneficial effects that:
according to the invention, the catalyst gas is inserted between the two reaction gases, the gas outlets are arranged in an array form, the distribution of the catalyst gas in the local space is accurately controlled by the hardware design around the catalyst gas, and the entering amount of the reaction gases at two sides diffusing to the space is controlled, so that the reaction rate of the catalytic reaction in the local space can be accurately controlled, and the film is uniformly deposited on the substrate through the relative motion between the gas inlet device and the substrate. Therefore, the chemical vapor deposition equipment with the accurate and adjustable deposition rate of the catalytic reaction in the local space is realized by using the gaseous catalyst.
In the modern organic plastic industry, most of organic polymerization reactions use catalysts, however, the current industrial route usually produces organic polymers in batches upstream, and then realizes organic functional films by melt stretching, liquid spraying and other methods, and the thickness of the organic functional films is usually controlled in the micron level, and the thickness of the organic functional films is controlled in the extremely high level to reach the submicron level. The space catalytic chemical vapor deposition equipment directly uses gaseous catalysts to realize the 'printing heads' of a localized catalytic reaction space, the 'printing heads' are periodically arranged, the 'printing heads' move relative to a substrate through the air inlet of an air inlet device, the 'printing type' uniform deposition film in the relative movement direction is realized, and the equipment has the characteristics of excellent large-area uniformity, accurate control of growth rate, suitability for industrial mass production and the like, has the thickness control reaching the nanometer or even sub-nanometer level, and is suitable for the application fields of organic functional film synthesis, reel-to-reel flexible display, solar cells, large-area and portable panel display, semiconductors, gas sensors and the like.
Drawings
FIG. 1 is a schematic structural view of example 1 of a spatially catalytic chemical vapor deposition apparatus.
Description of reference numerals:
10 air inlet device
101 air source device
102 first reaction gas outlet
103 catalyst gas outlet
104 second reaction gas outlet
11 air extraction groove device
12 base material
13 drive device
14 temperature control device
Detailed Description
Detailed description of the preferred embodiment example 1
The present invention will be described in detail with reference to the drawings and examples, and the inorganic catalytic reaction and the organic catalytic reaction are examples, but the present invention is not limited thereto.
FIG. 1 is a schematic view of an embodiment 1 of a spatially catalytic chemical vapor deposition apparatus according to the present invention. As shown in FIG. 1, the gas inlet device 10 in this embodiment comprises a total gas source 101, a first reaction gas outlet 102, a catalyst gas outlet 103, and a second reaction gas outlet 104, wherein the reaction gas outlets and the catalyst outlets are arranged at intervals.
The gas pumping groove device 11 is arranged around the catalyst gas outlet 103, and includes but is not limited to one group, two groups or a plurality of groups of gas pumping groove combinations, so as to realize the localized space catalytic reaction deposition. The gas extraction groove is connected with the gas extraction pipe, and the catalyst gas is intensively distributed in a local area through gas extraction equipment.
Drive means 13, in this example for driving the substrate 12, effects relative movement with the inlet of the inlet means and hence uniform deposition of spatially localised catalytic reaction deposits in the direction of relative movement, the drive means effecting a rate of movement of the substrate 12 of 1 × 10-3m/s to 10m/s, preferably at a movement rate of 1 × 10-3m/s to 10 m/s.
This example to deposit SiO2For example, 102 is the outlet of a first reactive gas, which includes but is not limited to halosilanes such as SiCl4、SiHCl3、SiH2Cl2、SiH3Cl, etc., in this embodiment tetrachlorosilane, 103 is a catalyst gas outlet, the reactant gas includes but is not limited to pyridine, etc., in this embodiment pyridine, 104 is a second reactant gas outlet, the reactant gas includes but is not limited to water vapor, ozone, etc., in this embodiment water vapor, etc., preferably the distance between the reactant gas outlet and the catalyst gas outlet is 1 × 10-2m to 5 × 10-1m。
The tetrachlorosilane and the water gas can react at the temperature of over 600K,in the presence of a catalyst such as pyridine, the reaction temperature can be lowered to 300K, which is advantageous for the deposition of SiO on partially non-refractory substrates2In this embodiment, the reaction temperature is preferably 300K to 500K, and the reaction treatment pressure is preferably 1Pa to 5 × 104Pa。
Under the preferable temperature and the preferable reaction processing pressure, the moisture and the tetrachlorosilane diffuse into the space of the catalyst pyridine to perform catalytic reaction, and SiO2The deposition reaction of the film is mainly concentrated at the periphery of the pyridine gas outlet.
According to the actual SiO2Film thickness requirement, preferably thickness of 1 × 10-9m to 1 × 10-6m。
After the above parameters are preferred, SiO is preferred according to the design mass production capacity of the equipment2The deposition rate of the film was 1 × 10-10m/s to 1 × 10-7m/s, and further determining the amount of water vapor and the source of tetrachlorosilane and the amount of pyridine serving as a catalyst.
The above examples are only for specifically illustrating the present invention and should not be construed as limiting the present invention. It is intended that the present invention cover such modifications and variations as may come within the scope of the appended claims.
Best mode for carrying out the invention example 2
The present invention will be described in detail below with reference to the drawings and examples, but the present invention is not limited thereto.
In this embodiment, the deposited polycaprolactone film is taken as an example, 102 and 104 are both the first reactant gas outlets, the caprolactone monomer is taken as an example in this embodiment, 103 is the catalyst gas outlet, the catalyst gas includes but is not limited to organoaluminum, zinc, magnesium, tin compounds, titanium esters, phosphines, pyridines, etc., the embodiment takes one of the organoaluminum trimethylaluminum as an example, the distance between the reactant gas outlet and the catalyst gas outlet is preferably 1 × 10-2m to 5 × 10-1m。
The caprolactone can generate catalytic ring-opening polymerization reaction at the temperature of more than 300K under the action of a catalyst of trimethylaluminum. In this embodiment, the reaction temperature is preferably 300K to 500K, preferably at the reaction sitePhysical pressure of 1 × 10-2Pa to 5 × 104Pa。
Under the preferable temperature and the preferable reaction processing pressure, the caprolactone monomer diffuses into the space of the catalyst trimethyl aluminum to perform catalytic reaction, and the deposition reaction of the polycaprolactone film is mainly concentrated at the periphery of the air outlet of the trimethyl aluminum.
The preferred thickness is 1 × 10 according to the actual thickness requirement of polycaprolactone film-9m to 1 × 10-6m。
After the above parameters are preferred, the deposition rate of the polycaprolactone film is preferably 1 × 10 according to the design mass production capability of the equipment-10m/s to 1 × 10-7m/s, and further determining the using amount of the caprolactone monomer and the catalyst trimethylaluminum.
The above examples are only for specifically illustrating the present invention and should not be construed as limiting the present invention. It is intended that the present invention cover such modifications and variations as may come within the scope of the appended claims.
Claims (10)
1. A spatially catalytic chemical vapor deposition apparatus, comprising:
the gas inlet device comprises a first gas outlet and is used for conveying the reaction gas A to the substrate; the second gas outlet is used for conveying the catalyst gas C to the substrate; a third gas outlet for delivering the reaction gas B to the substrate; a fourth gas outlet for delivering the catalyst gas C to the substrate;
the isolating device is distributed around the catalyst gas C, the isolating device enables the catalyst gas C to be intensively distributed in a space surrounded by the isolating device, and the mixing reaction of the two reaction gases in the space where the catalyst is concentrated realizes the localization on the space;
(ACBC). The three gases required by the periodic structure of the formula and four gas outlets and isolating devices distributed around the gas outlets of the catalyst form a minimum period composite structure unit, wherein the gas outlets (ACBC) m are more than or equal to 1;
the substrate is used for surface reaction deposition film formation;
the driving device is used for driving the air inlet of the air inlet device and/or the base material;
and the temperature control device is used for controlling the reaction temperature of the surface of the base material.
2. The spatially catalytic chemical vapor deposition apparatus of claim 1, wherein: the equipment is provided with a plurality of groups of minimum period composite structure units, a gas outlet at the outermost side of the equipment is reaction gas A or B, and the gas outlet is distributed to comprise (ACBC) mA (m is more than or equal to 1) and (ACBC) nACB (n is more than or equal to 0).
3. The spatially catalytic chemical vapor deposition apparatus of claim 1 or 2, wherein the isolation means is an exhaust groove means for isolating a specific space in which the distribution of the catalyst gas C is dynamically determined, the reaction gas a and the reaction gas B are mixed after diffusing into the space and participate in the deposition reaction on the substrate under the action of the catalyst gas C, and the reaction gas B does not participate in the deposition reaction on the substrate outside the specific space.
4. A spatially catalytic chemical vapor deposition apparatus as claimed in claim 3 wherein the evacuation channels are provided with one, two or more sets of evacuation channels at the catalyst outlet, the evacuation channel means surrounding the catalyst being connected to the evacuation conduit, the evacuation channels having an opening width of 1 × 10 along the direction of relative movement of the substrate and the inlet of the inlet means-3m to 1 × 10-1m, the distance between the center of the opening of the gas extraction groove around the catalyst gas outlet and the catalyst gas outlet is 2 × 10-3m to 2 × 10-1m; the pumping speed of the pumping groove is controlled so that the spatial distribution of the catalyst gas is dynamically determined.
5. The spatially catalytic chemical vapor deposition apparatus of claim 3, wherein the drive arrangement effects relative movement between the periodic composite structural elements of the spatially catalytic chemical vapor deposition apparatus and the substrate.
6. The spatially catalytic chemical vapor deposition apparatus of claim 5, wherein the driving device drives the periodic composite structural unit of the spatially catalytic chemical vapor deposition apparatus to move while the substrate is stationary; or the driving device drives the substrate to move, and the periodic composite structure unit of the space catalytic chemical vapor deposition equipment does not move; or the driving device drives the periodic composite structure unit and the substrate of the space catalytic chemical vapor deposition equipment, the periodic composite structure unit of the space catalytic chemical vapor deposition equipment moves, and the substrate also moves.
7. The spatially catalytic chemical vapor deposition apparatus of claim 1 or 2, wherein the reaction gas A and the reaction gas B are different reaction gases or the same reaction gas, and when the reaction gas A and the reaction gas B are the same reaction gas, the reaction gas self-reacts under the action of the catalyst; when the reaction gas A and the reaction gas B are different reaction gases, the reaction gases and the reaction gases are subjected to catalytic chemical reaction under the action of a catalyst.
8. The spatially catalytic chemical vapor deposition apparatus of claim 1 or 2, wherein the catalyst comprises but is not limited to one catalyst or a mixture of two or more catalysts, and the reaction gas A and the reaction gas B are subjected to catalytic chemical reaction under the action of a single catalyst or a composite catalyst.
9. The spatially catalytic chemical vapor deposition apparatus of claim 1 or 2, wherein the temperature control device controls the substrate temperature to be 1k to 2000 k.
10. The spatially catalytic chemical vapor deposition apparatus of claim 1 or 2, wherein the reaction gas outlet is spaced from the substrate by a distance of 1 × 10-4m to 2 × 10-1m, the distance between every two gas outlets is 1 × 10-3m to 1m, and the relative movement speed of the gas periodic composite structure unit and the substrate is 1 × 10-3m/s to 10 m/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810120398.0A CN108559975B (en) | 2018-02-06 | 2018-02-06 | Space catalytic chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810120398.0A CN108559975B (en) | 2018-02-06 | 2018-02-06 | Space catalytic chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108559975A CN108559975A (en) | 2018-09-21 |
| CN108559975B true CN108559975B (en) | 2020-08-25 |
Family
ID=63532246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810120398.0A Active CN108559975B (en) | 2018-02-06 | 2018-02-06 | Space catalytic chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108559975B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105493248A (en) * | 2013-09-30 | 2016-04-13 | 株式会社日立国际电气 | Method for manufacturing semiconductor device, substrate processing device, substrate processing system, and storage medium |
| CN106032573A (en) * | 2015-03-08 | 2016-10-19 | 理想晶延半导体设备（上海）有限公司 | Semiconductor processing equipment |
| CN106435528A (en) * | 2016-12-21 | 2017-02-22 | 江苏微导纳米装备科技有限公司 | Chemical vapor deposition equipment |
-
2018
- 2018-02-06 CN CN201810120398.0A patent/CN108559975B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105493248A (en) * | 2013-09-30 | 2016-04-13 | 株式会社日立国际电气 | Method for manufacturing semiconductor device, substrate processing device, substrate processing system, and storage medium |
| CN106032573A (en) * | 2015-03-08 | 2016-10-19 | 理想晶延半导体设备（上海）有限公司 | Semiconductor processing equipment |
| CN106435528A (en) * | 2016-12-21 | 2017-02-22 | 江苏微导纳米装备科技有限公司 | Chemical vapor deposition equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108559975A (en) | 2018-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10561975B2 (en) | Variable conductance gas distribution apparatus and method | |
| US20060185591A1 (en) | High temperature chemical vapor deposition apparatus | |
| Maydannik et al. | An atomic layer deposition process for moving flexible substrates | |
| US4834020A (en) | Atmospheric pressure chemical vapor deposition apparatus | |
| CN101914761B (en) | Device for controlling delivery and uniform distribution of reaction gases in MOCVD reaction chamber | |
| TW200728495A (en) | Method of deposite thin film with CVD reactor and the gas inlet element for a CVD reactor | |
| US9427762B2 (en) | Gas injector and cover plate assembly for semiconductor equipment | |
| CN101836303A (en) | Hover cushion transport for webs in a web coating process | |
| JP2008508744A5 (en) | ||
| CN101258786A (en) | Plasma processing equipment, plasma processing method, dielectric window for use therein and method for producing the same | |
| CN108149224A (en) | A kind of plasma-assisted atomic layer deposition apparatus | |
| US20060185590A1 (en) | High temperature chemical vapor deposition apparatus | |
| CN108559975B (en) | Space catalytic chemical vapor deposition equipment | |
| CN101760728B (en) | Chemical vapor deposition system | |
| CN103451624A (en) | Deposition furnace tube and method for depositing thin films | |
| CN101440479A (en) | Metalorganic chemical vapor deposition reactor | |
| CN103074605A (en) | Spray header and chemical vapor deposition equipment | |
| CN101748378A (en) | Film-forming carrier board and production method of solar batteries | |
| US20170211177A1 (en) | Method for forming film on flexible substrate by vapor deposition | |
| CN102586759B (en) | Gas delivery system and semiconductor processing equipment applying same | |
| CN203007411U (en) | Shower head and chemical vapor deposition equipment | |
| CN103343332A (en) | Chemical vapor deposition method | |
| CN101812673A (en) | Fan-shaped gas inlet spray head for metal organic chemical vapor deposition equipment | |
| KR910700360A (en) | Chemical vapor deposition reactor | |
| CN206438200U (en) | CVD stove reaction chamber multi-angle feeders |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Jiangsu micro nano technology Co.,Ltd. Address before: 214028, No. four, No. 7 Road, Wuxi New District, Jiangsu Applicant before: JIANGSU LEADMICRO NANO-EQUIPMENT TECHNOLOGY Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Patentee after: Jiangsu micro nano technology Co.,Ltd. Country or region after: China Address before: No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. Country or region before: China |