CN108559966A - A kind of anode construction and magnetic control sputtering device - Google Patents
A kind of anode construction and magnetic control sputtering device Download PDFInfo
- Publication number
- CN108559966A CN108559966A CN201810836962.9A CN201810836962A CN108559966A CN 108559966 A CN108559966 A CN 108559966A CN 201810836962 A CN201810836962 A CN 201810836962A CN 108559966 A CN108559966 A CN 108559966A
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- Prior art keywords
- anode
- plate
- magnet
- electronics
- target
- Prior art date
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- Pending
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- 238000010276 construction Methods 0.000 title claims abstract description 42
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 16
- 230000000903 blocking effect Effects 0.000 claims abstract description 13
- 230000000295 complement effect Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 13
- 238000005452 bending Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005488 sandblasting Methods 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention discloses a kind of anode construction and magnetic control sputtering device, which includes：The first anode is set between cathode target and second plate, for blocking the target particle sputtered to second plate；Second plate splashes incoming electronics for absorbing to neutralize by the cathode target；Magnet, for generating complementary field to form guiding role to the movement of the electronics, to guide the electronics to be moved to the second plate.The magnetic control sputtering device includes the anode construction.The present invention can ensure anode construction effective being deposited on the target particle of film and electronic selection on different anode constructions always, therefore, avoid electronics and plasma sputter is deposited on same anode, and anode disappears and the phenomenon that electric discharge.
Description
Technical field
The present invention relates to magnetron sputtering technique field, a kind of anode construction and magnetic control sputtering device are particularly related to.
Background technology
The anode construction of existing magnetic control sputtering device is generally directly grounded or applies an auxiliary voltage, so that electric
Son directly accelerates under the action of electric field force and is deposited on anode, is neutralized Electron absorption by anode, is in the neutrality of dispersion shape
Target particle is splashed on anode, and is deposited on anode.The film layer of the poor material of certain electric conductivity is prepared in reactive sputtering
In the process, the target particle that anode can be sputtered out is covered, and is formed the film layer of poorly conductive in anode surface, is led to electronics
It can not be neutralized by rapid absorb after being deposited on anode, cause electric discharge and anode extinction tests.
Invention content
In view of this, it is an object of the invention to propose a kind of anode construction and magnetic control sputtering device, anode can be avoided
It disappears.
Based on above-mentioned purpose, the present invention provides a kind of anode constructions, including：
The first anode is set between cathode target and second plate, splashes incoming target for blocking to second plate
Particle；
Second plate splashes incoming electronics for absorbing to neutralize by the cathode target；
Magnet, for generating complementary field to form guiding role to the movement of the electronics, with guide the electronics to
The second plate movement.
Optionally, the magnet is located at the bottom of the second plate, and the second plate corresponds to the position of the magnet
Equipped with hatch frame.
Optionally, the anode construction further includes third anode, and the third anode surrounds magnet.
Optionally, the first spacing, the second plate and third anode are formed between the first anode and second plate
Between form the second spacing, first spacing and the second spacing are 1-3mm.
Optionally, the first anode includes blocking portion and bending part, and the bending part is connect with blocking portion, and the folding
Turn of bilge is towards the second plate.
Optionally, the hatch frame is in splayed or tubaeform.
Optionally, the surface of the first anode is formed with sandblasting face.
Optionally, the first anode ground connection, third anode ground connection, the external auxiliary voltage of second plate.
Optionally, the first anode is made of stainless steel material, the second plate, third anode material select respectively
From copper, aluminium, silver, copper alloy, aluminium alloy, at least one of silver alloy, second plate can be identical with the material of third anode
Or it is different.
The present invention also provides a kind of magnetic control sputtering devices, including the anode construction.
From the above it can be seen that anode construction provided by the invention and magnetic control sputtering device, anode construction includes the
One anode, is set between cathode target and second plate, splashes incoming target particle for blocking to second plate；Second sun
Incoming electronics is splashed in pole for absorbing to neutralize by the cathode target；Magnet, for generating complementary field with to the electronics
Movement forms guiding role, to guide the electronics to be moved to the second plate；It is sputtered out by first anode deposition
Most target particles, meanwhile, magnet generates complementary field to form guiding role to low energy electrons so that is detached from target
The low energy electrons overwhelming majority of dissimulated electricity bypasses the first anode, neutralization is absorbed by second plate, due to the target of film
Particle and electronic selection are deposited on different anode constructions, therefore, avoid electronics and plasma sputter be deposited on it is same
The phenomenon that anode, anode disappears and discharges.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is the structural schematic diagram of the anode construction of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of second of anode construction of the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the third anode construction of the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of the 4th kind of anode construction of the embodiment of the present invention；
Fig. 5 is the structural schematic diagram of the magnetic control sputtering device of the embodiment of the present invention.
Reference numeral：
1：The first anode； 2：Second plate；
3：Third anode； 4：Magnet
21：First anode portion； 22：Second plate portion；
11：Blocking portion； 12：Bending part；
5：Target cylinder； 6：Middle layer；
7：Target； 8：Support construction；
9：Yoke； 10：Magnet；
13：Cathode target；
D1：First spacing； D2：Second spacing.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
It should be noted that all statements for using " first " and " second " are for differentiation two in the embodiment of the present invention
The non-equal entity of a same names or non-equal parameter, it is seen that " first " " second " only for the convenience of statement, does not answer
It is interpreted as the restriction to the embodiment of the present invention, subsequent embodiment no longer illustrates this one by one.
Fig. 1 is the structural schematic diagram of the anode construction of the embodiment of the present invention, as shown, the anode knot of the embodiment of the present invention
Structure includes the first anode 1, second plate 2, magnet 4.
The first anode 1 is set between cathode target 13 and second plate 2, for block splashed to second plate 2 it is incoming
Target particle；
Second plate 2 splashes incoming electronics for absorbing to neutralize by the cathode target 13；
Magnet 4, for generating complementary field to form guiding role to the movement of electronics, to guide the electronics to second
Anode 2 moves.
Fig. 2 is the structural schematic diagram of second of anode construction of the embodiment of the present invention, as shown in Fig. 2, the embodiment of the present invention
Anode construction on the basis of be the anode construction shown in figure 1 above, on second plate 2 position setting corresponding with magnet 4 open
Mouth structure 23.Hatch frame 23 is arranged in position corresponding with magnet 4 on second plate 2, can be led to electronics with enhancing magnet 4
Draw intensity.
Fig. 3 is the structural schematic diagram of the third anode construction of the embodiment of the present invention, as shown in figure 3, the embodiment of the present invention
Anode construction increase third anode 3 on the basis of be the anode construction shown in above-mentioned Fig. 1, third anode 3 surrounds magnet 4.
The minimum range of the first anode 1 and second plate 2 is the first space D 1, the minimum of second plate 2 and third anode 3
Distance is the second space D 2.In the embodiment of the present invention, the first space D 1 and the second space D 2 are 1-3mm, can both realize first
Cooperation between anode 1, second plate 2, third anode 3, and ensure between second plate 2 and the first anode 1 and third anode 3
Insulation.Cooperation between the first anode 1, second plate 2, third anode 3 refers to that the first anode 1 is blocked to second
Anode 2 splashes incoming target particle, and second plate 2, which absorbs to neutralize, splashes incoming electronics, and magnet 4 generates complementary field with right
The movement of the electronics forms guiding role, and guiding electronics is moved to second plate 2, and third anode 3 surrounds magnet 4 with to magnetic
Body 4 forms protection.
The first anode 1 is grounded, and is made of the material with the first conductivity, for obstruct, deposit sputter out it is exhausted big
Part target particle.
In the embodiment of the present invention, the first anode 1 is directly connected with vacuum chamber, is grounded by vacuum chamber, the first sun
The ground connection of pole 1 forms electric field to form potential difference between cathode targets, realizes magnetron sputtering process.
In the embodiment of the present invention, the first anode 1 is made of stainless steel plate.The size of the first anode 1 is according to cathode target
Position, which calculates, to be determined.Certainly, all other also within the scope of the present invention with the comparable material of stainless steel conductivity.
In the embodiment of the present invention, the surface of the first anode 1 carries out blasting treatment to form sandblasting face, conducive to the target sputtered
Material particle deposition avoids the occurrence of film layer peeling on the sandblasting face of the first anode 1.
Second plate 2 connects positive pole, is made of the material with the second conductivity, and the overwhelming majority is neutralized for absorbing
Low energy electrons.
In the embodiment of the present invention, positive voltage is added on second plate 2, voltage value can be according to processing technology requirement, plated film
The conditions such as thickness requirement are configured.Optionally, the auxiliary voltage of second plate 2 is about 20V-40V.
In the embodiment of the present invention, second plate 2 is respectively selected from copper, aluminium, silver, copper conjunction using the stronger material of electric conductivity
Gold, aluminium alloy, at least one of silver alloy material are made.
Third anode 3 is grounded, and is made of the material with third conductivity, and third anode 3 surrounds magnet 4, for protecting
Magnet 4, can avoid due to magnet absorb electronics and cause magnet to heat up, and then cause magnet magnetism reduce or disappear show
As ensureing that the magnet is effective.
Magnet 4 is located at the bottom of second plate 2, and magnet 4 guides the movement of low energy electrons for generating complementary field
(low energy electrons refer in cathode targets in magnetron sputtering process, be detached from cathode targets control electronics, the electron energy compared with
It is low, also just because of its low energy, just it is easier to be guided by complementary field active force, to change the direction of motion.).In electric field and attached
Under the collective effect for adding magnetic field, concentrated from the low energy electrons that cathode targets sputter to anode structure motion, finally by second
Anode 2 absorbs neutralization.Specifically, low energy electrons are under the action of electric field, to anode structure motion, in motion process,
It is acted on by complementary field caused by magnet 4, is done spiral movement along magnetic field line, and finally blocked, inhale by second plate 2
It receives and neutralizes.
In the embodiment of the present invention, third anode 3 is directly connected with vacuum chamber, is grounded by vacuum chamber.
In the embodiment of the present invention, third anode 3 uses the stronger copper of electric conductivity, aluminium, silver, copper alloy, aluminium alloy, silver conjunction
At least one of gold is made.
In the embodiment of the present invention, the requirement according to concrete application scene to anode conducting performance, the first conductivity, the second electricity
Conductance, third conductivity can be identical, can also be configured to difference as needed.
Fig. 4 is the structural schematic diagram of the 4th kind of anode construction of the embodiment of the present invention.The material requirements that anode is made has
Low magnetic conductivity, as shown, in the embodiment of the present invention, second plate 2 is equipped with hatch frame in position corresponding with magnet 4
23, to enhance the guiding role to low energy electrons.Second plate 2 is made of first anode portion 21 and second plate portion 22,
First anode portion 21 is symmetrical arranged with second plate portion 22, and hatch frame is equipped between first anode portion 21 and second plate portion 22
23, and the position of hatch frame 23 is corresponding with third anode 3 and its magnet 4 surrounded, first anode portion 21 and second plate
Extended distance between portion 22 is 2-3cm, and be open depth 2-3cm, and hatch frame 23 is in splayed or the loudspeaker with radian
Shape.
As shown in figure 4, in the embodiment of the present invention, the first anode 1 includes blocking portion 11 and bending part 12, bending part 12 and resistance
Stopper 11 connects, and bending part 12, towards second plate 2, blocking portion 11 is sputtered with bending part 12 for blocking to second plate 2
The target particle to come over, blocking portion 11 can be in that vertical shape can also be in arc line shaped.
Fig. 5 is the structural schematic diagram of the magnetic control sputtering device of the embodiment of the present invention.As shown, in the embodiment of the present invention,
Magnetic control sputtering device includes cathode target structure and the anode construction.
In the embodiment of the present invention, cathode target structure includes target cylinder 5, target 7, magnetic assembly.
Target 7 is cylindrical target, and middle layer 6 is arranged between target cylinder 5 and target 7.In the embodiment of the present invention, target cylinder 5 can
It is made of 316 stainless steels, middle layer 6 uses the indium metal material of carbon dope fiber, target cylinder 5 to be connected by middle layer 6 with target 7
It connects.For the metal material target with some strength, target cylinder and target integrated molding can also be made.
Magnetic assembly is set in cylindrical target, and magnetic assembly fixes the yoke of support by support construction 8 and by support construction 8
9, magnet 10 forms.
In magnetron sputtering process, the neutral target particle overwhelming majority that target material surface is sputtered out is deposited on substrate,
The overwhelming majority in a small amount of target particle in large angle scattering is obstructed and be deposited on the first anode 1 by the first anode 1.It is low
Energy electron departing from target material surface high-intensity magnetic field constraint, under the action of electric field, to anode structure motion, in motion process,
It is acted on by complementary field caused by magnet 4, the magnetic field line along complementary field is done spiral movement, and finally by the second sun
It blocks, absorb neutralization in pole 2.Third anode 3 forms magnet 4 and protects, and a small amount of low energy that will enter via hatch frame 23
Electron institute, which absorbs, to be neutralized.
The device of above-described embodiment is implemented for realizing corresponding method in previous embodiment with corresponding method
The advantageous effect of example, details are not described herein.
Those of ordinary skills in the art should understand that：The discussion of any of the above embodiment is exemplary only, not
It is intended to imply that the scope of the present disclosure (including claim) is limited to these examples；Under the thinking of the present invention, above example
Or can also be combined between the technical characteristic in different embodiments, step can be realized with random order, and be existed such as
Many other variations of the different aspect of the upper present invention, for simplicity, they are not provided in details.
In addition, to simplify explanation and discussing, and in order not to obscure the invention, it can in the attached drawing provided
To show or can not show that the well known power ground with integrated circuit (IC) chip and other components is connect.Furthermore, it is possible to
Device is shown in block diagram form, to avoid obscuring the invention, and this has also contemplated following facts, i.e., about this
The details of the embodiment of a little block diagram arrangements is the platform that height depends on to implement the present invention (that is, these details should
It is completely within the scope of the understanding of those skilled in the art).Detail (for example, circuit) is being elaborated to describe the present invention's
In the case of exemplary embodiment, it will be apparent to those skilled in the art that can be in these no details
In the case of or implement the present invention in the case that these details change.Therefore, these descriptions should be considered as explanation
Property rather than it is restrictive.
Although having been incorporated with specific embodiments of the present invention, invention has been described, according to retouching for front
It states, many replacements of these embodiments, modifications and variations will be apparent for those of ordinary skills.Example
Such as, other memory architectures (for example, dynamic ram (DRAM)) can use discussed embodiment.
The embodiment of the present invention be intended to cover fall within the broad range of appended claims it is all it is such replace,
Modifications and variations.Therefore, all within the spirits and principles of the present invention, any omission, modification, equivalent replacement, the improvement made
Deng should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of anode construction, which is characterized in that including：
The first anode (1) is set between cathode target (13) and second plate (2), is sputtered to second plate (2) for blocking
Target particle；
Second plate (2) splashes incoming electronics for absorbing to neutralize by the cathode target (13)；
Magnet (4), for generating complementary field to form guiding role to the movement of the electronics, to guide the electronics to institute
State second plate (2) movement.
2. anode construction according to claim 1, which is characterized in that the magnet (4) is located at the second plate (2)
The position of bottom, the corresponding magnet (4) of the second plate (2) is equipped with hatch frame (23).
3. anode construction according to claim 1 or 2, which is characterized in that
The anode construction further includes third anode (3), and the third anode (3) surrounds the magnet (4).
4. anode construction according to claim 3, which is characterized in that between the first anode (1) and second plate (2)
The first space D 1 is formed, forms the second space D 2, first space D 1 between the second plate (2) and third anode (3)
It is 1-3mm with second space D 2.
5. anode construction according to claim 1, which is characterized in that the first anode (1) include blocking portion (11) with
Bending part (12), the bending part (12) connect with blocking portion (11), and the bending part (12) is towards the second plate
(2)。
6. anode construction according to claim 2, which is characterized in that the hatch frame (23) is in splayed or loudspeaker
Shape.
7. anode construction according to claim 1, which is characterized in that the surface of the first anode (1) is formed with sandblasting
Face.
8. anode construction according to claim 3, which is characterized in that the first anode (1) ground connection, the third anode
(3) it is grounded, the external auxiliary voltage of the second plate (2).
9. anode construction according to claim 3, which is characterized in that the first anode (1) uses stainless steel material system
It is respectively selected from copper at the material of, the second plate (2), third anode (3), aluminium, silver, copper alloy, aluminium alloy, in silver alloy
The material of at least one, second plate (2) and third anode (3) can be identical or different.
10. a kind of magnetic control sputtering device, which is characterized in that including the anode construction described in any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810836962.9A CN108559966A (en) | 2018-07-26 | 2018-07-26 | A kind of anode construction and magnetic control sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810836962.9A CN108559966A (en) | 2018-07-26 | 2018-07-26 | A kind of anode construction and magnetic control sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108559966A true CN108559966A (en) | 2018-09-21 |
Family
ID=63556003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810836962.9A Pending CN108559966A (en) | 2018-07-26 | 2018-07-26 | A kind of anode construction and magnetic control sputtering device |
Country Status (1)
| Country | Link |
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| CN (1) | CN108559966A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090321248A1 (en) * | 2008-06-30 | 2009-12-31 | Tousimis Anastasios J | Low damage sputtering system and method |
| CN101874283A (en) * | 2007-08-15 | 2010-10-27 | 基恩科有限公司 | Low impedance plasma |
| CN104718598A (en) * | 2012-09-11 | 2015-06-17 | 基恩科有限公司 | Plasma source |
| CN106637103A (en) * | 2016-10-12 | 2017-05-10 | 南京华东电子信息科技股份有限公司 | Anode stabilizing device of IGZO film formation equipment |
| CN106884150A (en) * | 2017-04-24 | 2017-06-23 | 大连爱瑞德纳米科技有限公司 | A kind of suspension anode and the magnetic control sputtering device with suspension anode |
| CN107614737A (en) * | 2015-03-18 | 2018-01-19 | 视觉缓解公司 | Anodic protection cover |
| CN208791744U (en) * | 2018-07-26 | 2019-04-26 | 北京铂阳顶荣光伏科技有限公司 | A kind of anode construction and magnetic control sputtering device |
-
2018
- 2018-07-26 CN CN201810836962.9A patent/CN108559966A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101874283A (en) * | 2007-08-15 | 2010-10-27 | 基恩科有限公司 | Low impedance plasma |
| US20090321248A1 (en) * | 2008-06-30 | 2009-12-31 | Tousimis Anastasios J | Low damage sputtering system and method |
| CN104718598A (en) * | 2012-09-11 | 2015-06-17 | 基恩科有限公司 | Plasma source |
| CN107614737A (en) * | 2015-03-18 | 2018-01-19 | 视觉缓解公司 | Anodic protection cover |
| CN106637103A (en) * | 2016-10-12 | 2017-05-10 | 南京华东电子信息科技股份有限公司 | Anode stabilizing device of IGZO film formation equipment |
| CN106884150A (en) * | 2017-04-24 | 2017-06-23 | 大连爱瑞德纳米科技有限公司 | A kind of suspension anode and the magnetic control sputtering device with suspension anode |
| CN208791744U (en) * | 2018-07-26 | 2019-04-26 | 北京铂阳顶荣光伏科技有限公司 | A kind of anode construction and magnetic control sputtering device |
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