CN206408287U - Magnetic controlled sputtering target cover - Google Patents
Magnetic controlled sputtering target cover Download PDFInfo
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- CN206408287U CN206408287U CN201621431070.3U CN201621431070U CN206408287U CN 206408287 U CN206408287 U CN 206408287U CN 201621431070 U CN201621431070 U CN 201621431070U CN 206408287 U CN206408287 U CN 206408287U
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- cover
- wire
- magnetic controlled
- sputtering target
- controlled sputtering
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Abstract
The utility model provides a kind of magnetic controlled sputtering target cover, belongs to base plate glass processing technique field.The magnetic controlled sputtering target cover, including cover and side, side is arranged at cover outward flange, the boundary line of side and cover encloses the figure of a closing, sputtering window is provided with cover, also include an at least wire, side is fixed at wire two ends, and projection section of the wire on cover is located at sputtering window.The magnetic controlled sputtering target cover can effectively lift the effect that target deposits film forming in substrate surface.
Description
Technical field
The utility model belongs to base plate glass processing technique field, more particularly to a kind of magnetic controlled sputtering target cover.
Background technology
Fig. 1 is magnetron sputtering membrane process schematic diagram, please join Fig. 1, and magnetron sputtering is by being introduced in the cathode surface of target 11
Magnetic field and electric field, sputtering raste is increased using magnetic field and electric field to the constraint of charged particle to improve plasma density.Electronics exists
In the presence of electric field, collided during the substrate 15 being fixed on plated film dolly 13 is flown to ar atmo, make its electricity
From generation Ar+With new electronics：New electronics flies to substrate 15, and Ar+ accelerates to fly to cathode target 11 under electric field action, and with high energy
Amount bombardment target 11 surface, sputters target.In sputter procedure, a part of charged particle collides with wall, occurs
Compound, with wall compound particle occurs for this part, to the seriously polluted of magnetic control chamber body.Prior art is by setting a target
Cover 12, to mask this part sputtering particle.
In sputter procedure, some electronics and anion fly to anode 17 and are deposited on the surface of substrate 15, this portion
Electronics and anion is divided to produce certain influence, the wherein relatively low electricity of energy to the effect that target deposits film forming on the surface of substrate 15
Son and anion can make the effect of target material deposition film forming be deteriorated.The structural representation for the target cover 12 that Fig. 2 provides for prior art, please
Join Fig. 2, target cover 12 includes being provided with sputtering window 12c on cover 12a and multiple side 12b, cover 12a, and sputtering window 12c is
Ar+, electronics, anion and sputter target motion passage.The relatively low electronics of energy can be directly from sputtering window 12c
Fly out and be deposited on the surface of substrate 15, so that the effect that target deposits film forming on the surface of substrate 15 is deteriorated.
Utility model content
For problem of the prior art, the utility model provides a kind of magnetic controlled sputtering target cover, can effectively lift target in base
Piece surface deposits the effect of film forming.
To reach above-mentioned purpose, the utility model is adopted the following technical scheme that：
A kind of magnetic controlled sputtering target cover, including cover and side, side is arranged at the boundary of cover outward flange, side and cover
Line is enclosed and is provided with sputtering window, in addition to an at least wire on the figure of a closing, cover, and wire two ends are fixed
In side, projection section of the wire on cover is located at sputtering window.
Further, wire is molybdenum filament.
Further, the quantity of wire is 3.
Further, wherein an one metal wire is perpendicular to another two one metal wire, and the midpoint of other two one metal wire is passed through.
Further, 3 one metal wires are integrally formed.
Further, a diameter of 4-6mm of wire.
Further, the distance of wire and cover be equal to side the length on target cover direction three/
One.
Further, welded wire is fixed on side.
The magnetic controlled sputtering target that the utility model embodiment is provided, by setting wire, can catch the relatively low electricity of energy
Son and anion, it is to avoid it is deposited on substrate surface, improve the quality that target deposits film forming in substrate surface.
Brief description of the drawings
Below in conjunction with drawings and Examples, the utility model is described in further detail, in accompanying drawing：
Fig. 1 is magnetron sputtering membrane process schematic diagram.
The structural representation for the target cover that Fig. 2 provides for prior art.
Fig. 3 covers on the dimensional structure diagram at a certain visual angle for the magnetic controlled sputtering target that the utility model embodiment is provided.
Fig. 4 covers on the dimensional structure diagram at another visual angle for magnetic controlled sputtering target in Fig. 3.
Embodiment
To illustrate magnetic controlled sputtering target cover that the utility model embodiment is provided, below in conjunction with Figure of description and explanatory note
It is described in detail.
Fig. 3 covers on the dimensional structure diagram at a certain visual angle, Fig. 4 for the magnetic controlled sputtering target that the utility model embodiment is provided
The dimensional structure diagram at another visual angle is covered on for magnetic controlled sputtering target in Fig. 3, Fig. 3 and Fig. 4 please be join, the utility model embodiment is carried
The magnetic controlled sputtering target cover 30 of confession includes cover 30a, side 30b and an at least wire 50.
Cover 30a is in tabular, at least including a first surface 31a, it is preferable that cover 30a outward flange is formed as square
Shape.First surface 31a middle section is formed with sputtering window 30c, it is preferable that sputtering window 30c edge is formed as specific
Shape.
Side 30b is arranged at cover 30a outer edge, and side 30b is vertically arranged with cover 30a, it is preferable that side
30b is integrally formed with cover 30a.In the present embodiment, side 30b quantity is four, and four side 30b are respectively arranged at cover
Tetra- edges of 30a, four side 30b, which join end to end, encloses " mouth " font of a closing.
The two ends of wire 50 are separately fixed on the 30b of side, projection section position of the wire 50 on first surface 31a
In sputtering window 30c, it is preferable that each wire 50 is weldingly fixed on two side 30b being oppositely arranged.Preferably, it is golden
Distance between category silk 50 and cover 30a is side 30b 1/3rd of the length on cover 30a directions.
The quantity of wire 50 is preferably three, wherein an one metal wire 50 passes through the midpoint of other two one metal wire 50 simultaneously
Perpendicular to other two one metal wire 50, it is preferable that three one metal wires 50 are integrally formed.
The diameter of wire 50 is preferably four to six millimeters.Projection of the wire 50 on cover 30a is located at sputtering window
In 30c.
Cover 30a and side 30b making material is red copper, and the making material of wire 50 is preferably molybdenum.
Target is by magnetron sputtering during substrate surface deposits film forming, and electronics is former with argon in the presence of electric field
Son collides, and its ionization is produced Ar+, Ar+ accelerates to fly to cathode target under electric field action, through sputtering window 30c after with
High-energy bombardment target surface, sputters target.
In sputter procedure, the target that region blocks are sputtered beyond sputtering window 30c on side 30b and target surface
Motion, the target sputtered can only move to substrate surface by sputtering window 30c.Window 30c outward flange is sputtered in specific
Shape, the given shape designs according to target in the deposition rule of substrate surface, and the target sputtered is by sputtering window
After 30c, in substrate surface uniform deposition film forming.
In sputter procedure, some electronics and anion are sputtered from target cathode, are flown to anode and are deposited on base
Piece surface.In the part electronics and anion, the relatively low electronics of energy and anion are caught by wire 50, so as to can not sputter
Go out to sputter window 30c.
It is appreciated that the magnetic controlled sputtering target that the utility model embodiment is provided, is provided with wire 50, can catch energy
Relatively low electronics and anion, it is to avoid it is deposited on substrate surface, improves the quality that target deposits film forming in substrate surface.
Further, the making material of the wire 50 is molybdenum.By the way that experimental results demonstrate be used as the wire 50 using molybdenum
Making material, catch low energy electronics and anion best results.
Further, the distance between wire 50 and cover 30a is side 30b in the length on cover 30a directions
/ 3rd of degree.By the way that experimental results demonstrate the distance between wire 50 and cover 30a is side 30b perpendicular to cover
/ 3rd of length on 30a directions, wire 50 catches the electronics of low energy and the best results of anion.
Further, the quantity of wire 50 is three, wherein an one metal wire 50 passes through other two one metal wire 50
Midpoint and perpendicular to other two one metal wire 50, three one metal wires 50 are integrally formed.By experimental results demonstrate the design of, this kind,
Wire 50 catches the electronics of low energy and the best results of anion.
Further, a diameter of four to six millimeters of wire 50.By a diameter of experimental results demonstrate, wire 50
Four to six millimeters, catch the electronics of low energy and the best results of anion.
The magnetic controlled sputtering target cover provided above for the utility model, can not be interpreted as to the utility model rights protection model
The limitation enclosed, those skilled in the art will be appreciated that, without departing from the concept of the premise utility, can also do a variety of improvement
Or replace, all improvement or replacement all should be in rights protection scopes of the present utility model, i.e., right of the present utility model is protected
Shield scope should be defined by claim.
In the case where not conflicting, the feature in embodiment and embodiment herein-above set forth can be combined with each other.
Claims (8)
1. a kind of magnetic controlled sputtering target cover, including cover and side, the cover at least include a first surface, the first surface
Middle section be provided with sputtering window, the side is arranged at the cover outward flange, the side and the friendship of the cover
Boundary line encloses the figure of a closing, it is characterised in that the magnetic controlled sputtering target cover also includes an at least wire, the gold
The side is fixed at category silk two ends, and projection section of the wire on the cover is located at the sputtering window.
2. magnetic controlled sputtering target cover as claimed in claim 1, it is characterised in that the wire is molybdenum filament.
3. magnetic controlled sputtering target cover as claimed in claim 1, it is characterised in that the quantity of the wire is 3.
4. magnetic controlled sputtering target cover as claimed in claim 3, it is characterised in that wherein one wire is perpendicular to another two
The wire, and pass through the midpoint of other two wires.
5. magnetic controlled sputtering target cover as claimed in claim 3, it is characterised in that 3 one metal wire is integrally formed.
6. magnetic controlled sputtering target cover as claimed in claim 1, it is characterised in that a diameter of 4-6mm of the wire.
7. magnetic controlled sputtering target cover as claimed in claim 1, it is characterised in that the distance of the wire and the cover is equal to
The side in the length on the target cover direction 1/3rd.
8. magnetic controlled sputtering target cover as claimed in claim 1, it is characterised in that the welded wire is fixed on the side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621431070.3U CN206408287U (en) | 2016-12-23 | 2016-12-23 | Magnetic controlled sputtering target cover |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621431070.3U CN206408287U (en) | 2016-12-23 | 2016-12-23 | Magnetic controlled sputtering target cover |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206408287U true CN206408287U (en) | 2017-08-15 |
Family
ID=59553226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621431070.3U Active CN206408287U (en) | 2016-12-23 | 2016-12-23 | Magnetic controlled sputtering target cover |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206408287U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108239760A (en) * | 2016-12-23 | 2018-07-03 | 浙江金徕镀膜有限公司 | Magnetic controlled sputtering target cover |
-
2016
- 2016-12-23 CN CN201621431070.3U patent/CN206408287U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108239760A (en) * | 2016-12-23 | 2018-07-03 | 浙江金徕镀膜有限公司 | Magnetic controlled sputtering target cover |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 321016 No. 333, Chung Xue street, Wucheng District, Jinhua, Zhejiang. Patentee after: Zhejiang Lai Bao Technology Co., Ltd. Address before: 321016 No. 333, Chung Xue street, Wucheng District, Jinhua, Zhejiang. Patentee before: Zhejiang Jinley Coating Co., Ltd. |