CN108557755B - High-frequency alternating current driven local anodic oxidation processing method - Google Patents
High-frequency alternating current driven local anodic oxidation processing method Download PDFInfo
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Abstract
The invention provides a high-frequency alternating current driven local anodic oxidation processing method, which comprises the following steps: providing a substrate, a sample to be processed and a conductor probe, wherein the sample to be processed is positioned on the substrate, the substrate is of a double-layer structure comprising a dielectric layer and a conductive layer, the dielectric layer is positioned above the conductive layer and is in contact with the sample to be processed, a high-frequency alternating voltage is applied between the conductor probe and the conductive layer, and the conductor probe moves on the surface of the sample to be processed along a processing path, so that the sample to be processed on the processing path is oxidized. The high-frequency alternating current driven local anodic oxidation processing method provided by the invention is suitable for processing and etching of low-dimensional nano samples, the process is simple, micro-nano electrodes do not need to be processed, and the processing quality is superior to that of the traditional direct current anodic oxidation method.
Description
Technical Field
The invention relates to the technical field of nano processing, in particular to a local anodic oxidation processing method driven by high-frequency alternating current.
Background
Currently, Electron Beam Lithography (Electron Beam Lithography), optical Lithography (Photon Lithography), Scanning Probe direct writing (Scanning Probe Lithography), and the like are mainly used as micro-nano processing techniques. In the processing process of electron beam exposure and optical exposure, a layer of organic resist is required to be covered on the surface of a sample firstly, then high-energy electron beams or light beams are used for irradiating the surface of the resist to form a required pattern, the pattern is transferred to the sample by means of etching and the like, and finally the resist is removed. The disadvantages are that the organic resist is often difficult to clean and the introduction of chemical solvents is required to clean the resist, further contaminating the sample.
The operation steps of the scanning probe direct-writing processing are simple, and organic matters such as a resistance agent and the like do not need to be introduced, so that the scanning probe direct-writing processing method is a clean processing technology. The basic working principle is to locally change the properties of a material by force, heat, light, electricity or chemical action when a scanning probe is brought into contact with the surface of the material, thereby directly forming a desired pattern on the surface of the material. The local anodization is a very effective principle method in the scanning probe direct-writing processing, and comprises the following specific steps: a direct current voltage is applied between the sample and the needle point of the scanning probe, the sample is connected to the anode, the needle point is connected to the cathode, water molecules can be adsorbed between the needle point and the sample due to the existence of a strong electric field, and a water bridge formed by an adsorbed water layer is formed. The water bridge, the sample and the needle point form a nanoscale electrochemical reaction cell. The surface of the sample in the water bridge covering area is changed by electrochemical reaction, the position of the electrochemical reaction moves along with the position of the needle point, and the needle point is controlled to move according to the processing path, so that the required pattern can be formed on the sample.
The existing local anodic oxidation method adopts direct current voltage, and when a substrate of a nano sample to be processed is an insulator, an electrode needs to be prepared on the nano sample in advance so as to be convenient for connecting a lead. For micro-nano-scale small samples, the process for preparing the electrode on the surface is complex, and the electrode is prepared by combining electron beam exposure or optical exposure with an evaporation coating technology. This procedure is not only complicated, but also introduces organic contaminants into the sample. Therefore, when the existing direct current local anodic oxidation technology is used for processing micro-nano-scale samples, the processing steps are complicated, and the existing organic pollution is easy to occur. In addition, when the existing processing technology is used for etching materials such as graphene, the etched part of the materials cannot be completely oxidized, and the generated solid oxidation products can be remained on the surface of a sample.
Therefore, it is necessary to provide a new local anodization process to solve the above problems for high quality processing of nano-samples on insulating substrates.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a novel local anodization processing method for solving the problems of the existing dc local anodization technology that the processing of the target nanomaterial on the insulating substrate is difficult and the processing quality is low.
In order to achieve the above and other related objects, the present invention provides a high-frequency ac-driven local anodizing method, comprising:
providing a substrate, a sample to be processed and a conductor probe, wherein the sample to be processed is positioned on the substrate, the substrate is of a double-layer structure comprising a dielectric layer and a conductive layer, the dielectric layer is positioned above the conductive layer and is in contact with the sample to be processed, a high-frequency alternating voltage is applied between the conductor probe and the conductive layer, and the conductor probe moves on the surface of the sample to be processed along a processing path, so that the sample to be processed on the processing path is oxidized.
In a preferred embodiment of the present invention, the dielectric layer material comprises SiO2、hBN、GeO2、Al2O3、HfO2、BaTiO3PMN-PT, mica, PMMA, PC or PVC.
In a preferred embodiment of the present invention, the conductive layer material includes Si, Ge, graphite, metal or conductive ionic liquid.
As a preferable scheme of the invention, the sample to be processed is a conductive low-dimensional nano material.
As a preferable aspect of the present invention, the conductive low dimensional nanomaterial includes at least graphene or carbon nanotubes, and the graphene or carbon nanotubes are oxidized into carbon monoxide or carbon dioxide during the processing process and are removed by etching.
In a preferred embodiment of the present invention, the conductor probe is an atomic force microscope probe or a scanning tunneling microscope probe, and the processing of the sample to be processed is performed in the atomic force microscope or the scanning tunneling microscope.
In a preferred embodiment of the present invention, the frequency of the high-frequency alternating current is greater than 1000 Hz.
In a preferred embodiment of the present invention, the sample to be processed and the conductive needle tip are connected through a nano-sized water bridge during the whole processing process.
As described above, the present invention provides a local anodizing method driven by high-frequency ac power, which has the following advantages:
the invention introduces a high-frequency alternating current driven local anodic oxidation processing method, is suitable for processing micro-nano samples on an insulating substrate, has simple process, does not need to process micro-nano electrodes, is easy to operate, and does not produce organic matter pollution. In addition, the etched part is completely oxidized, no solid incomplete oxidation product is left, and the processing quality is superior to that of the traditional direct current anodic oxidation method.
Drawings
FIG. 1 is a schematic cross-sectional view of a high frequency AC-driven local anodization process provided in an embodiment of the invention.
Fig. 2 shows an etching schematic diagram of the high-frequency ac-driven local anodization method provided in the embodiment of the present invention.
Fig. 3 is an enlarged cross-sectional view of the high-frequency ac-driven local anodization method provided in an embodiment of the present invention at the beginning of etching.
Fig. 4 is an enlarged cross-sectional view of the high-frequency ac-driven local anodization method provided in an embodiment of the present invention during etching.
Fig. 5 shows an atomic force microscope topography of the etched graphene nanoribbon provided in the first embodiment of the present invention.
Fig. 6 shows an afm profile of a carbon nanotube before cutting, which is provided in the second embodiment of the present invention.
Fig. 7 shows an afm profile of the cut carbon nanotube provided in the second embodiment of the present invention.
Description of the element reference numerals
11 substrate
111 dielectric layer
112 conductive layer
12 sample to be processed
13 conductor probe
14 high frequency ac voltage
15 water bridge
16 machining path
17 equivalent resistance
18 equivalent capacitance
21 single layer graphene samples
22 etching path
23 selection area
24 partial enlargement
31 carbon nanotubes before cutting
32 cutting path
33 cut carbon nanotubes
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 7. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1 to 4, the present invention provides a high-frequency ac-driven local anodizing method, including:
providing a substrate 11, a sample 12 to be processed and a conductor probe 13, wherein the sample 12 to be processed is located on the substrate 11, the substrate 11 is a double-layer structure comprising a dielectric layer 111 and a conductive layer 112, the dielectric layer 111 is located above the conductive layer 112 and is in contact with the sample 12 to be processed, a high-frequency alternating voltage 14 is applied between the conductor probe 13 and the conductive layer 112, and the conductor probe 13 moves along a processing path 16 on the surface of the sample 12 to be processed, so that the sample 12 to be processed on the processing path 16 is oxidized.
Referring to fig. 1, the high-frequency ac-driven local anodization method of the present invention can be used for sample processing of an insulating substrate. The sample to be processed 12 is prepared on the substrate 11. The substrate 11 is divided into two layers, namely a dielectric layer 111 and a conductive layer 112, wherein the dielectric layer 111 is connected with the sample 12 to be processed; the conductor probe 13 and the conductive layer 112 are respectively connected with the high-frequency alternating voltage 14, and by applying the high-frequency alternating voltage 14, the conductor probe 13 moves on the surface of the sample 12 to be processed according to the processing path 16, and the processing process is completed.
The sample 12 to be processed is oxidized under the action of the high-frequency alternating voltage 14, and if the sample 12 to be processed becomes a volatile substance after being oxidized, for example, carbon is oxidized into carbon monoxide or carbon dioxide, the processing process is an etching process and can be used for etching the sample 12 to be processed; if the sample 12 to be processed remains solid after oxidation, the processing forms an oxide pattern of the material on the surface of the material. As shown in fig. 2, the sample 12 to be processed becomes volatile substances after being oxidized, i.e., an etching process. The conductive probe 13 moves along the processing path 16, and the sample 12 to be processed on the moving path is oxidized, volatilized, and removed, thereby completing the etching process. Only the tip portion of the conductor probe 13 is shown in fig. 2.
Referring to fig. 3 and 4, fig. 3 is an enlarged cross-sectional view of the conductive probe 13 approaching the sample 12 to be processed at the beginning of the processing process and not contacting the surface of the sample 12 to be processed. In this system, the dielectric layer 111, the sample to be processed 12 above and below the dielectric layer, and the conductive layer 112 together form an equivalent capacitor 18, and the capacitance value thereof is denoted as C; the inhomogeneous strong electric field between the conductor probe 13 and the surface of the sample 12 to be processed adsorbs water molecules in the air and forms a water bridge 15, and the resistance value of the equivalent resistance 17 is marked as R. When a high-frequency alternating voltage 14, the voltage of which is U, is applied between the conductor probe 13 and the conductive layer 112totalThe voltage U divided between the needle tip and the sample surface is easily calculated to be U ═ UtotalR/(R +1/j ω C), where ω is the AC angular frequency and j is the imaginary unit. Adjusting the applied voltage U according to the formula and the requirement of the local anodic oxidation reactiontotalAnd alternating current angular frequency omega, the partial pressure U between the needle tip and the sample surface required by the reaction can be obtained. The water bridge 15, the tip of the conductor probe 13 and the surface of the sample 12 to be processed can be regarded as a nano-scale electrolytic cell. In a half period in which the high-frequency alternating voltage 14 is positive at the surface of the sample, the sample 12 to be processed serves as an anode, and an oxidation reaction occurs at the surface thereof. The nano-size of the water bridge 15 can control the extent of the oxidation reaction. Therefore, the local electrochemical reaction occurs within the moving path of the needle tip. In the other half period of the high frequency alternating voltage 14, the sample 12 to be processed is connected with the cathode, the conductor probe 13 is connected with the anode, and the probe material is generally stable inert metal material and does not participate in electrochemical reaction. Fig. 4 is an enlarged cross-sectional view of the etching process. At this time, the conductor probe 13 contacts the substrate 11, the sample 12 to be processed between them is etched before contact, and the water bridge 15 around the conductor probe 13 still covers the sample 12 to be processed which is not etched, and the part of the sample 12 to be processed12 will form a loop with the conductor probe 13, the dielectric layer 111 and the conductive layer 112, and will be oxidized and etched by the high frequency ac voltage 14. When the conductor probe 13 is slowly moved along the processing path 16, the portion of the sample 12 to be processed covered by the water bridge 15 is gradually etched away.
As an example, the dielectric layer 111 material comprises SiO2、hBN、GeO2、Al2O3、HfO2、BaTiO3PMN-PT, mica, PMMA, PC or PVC. Wherein, silicon dioxide (SiO)2) The layer may serve as a substrate for graphene; the hexagonal boron nitride (hBN) layer may serve as a substrate for the carbon nanotubes.
By way of example, the conductive layer 112 material includes Si, Ge, graphite, metal, or a conductive ionic liquid. Preferably, the conductive layer 112 is a silicon substrate.
As an example, the sample 12 to be processed is a conductive low-dimensional nanomaterial. The sample 12 to be processed has good conductivity and can be a one-dimensional nanotube wire material or a two-dimensional nano thin film material.
As an example, the conductive low dimensional material includes at least graphene or carbon nanotubes, which are oxidized into carbon monoxide or carbon dioxide during the processing, and thus etched away. As previously described, when the carbon material is oxidized, it becomes gaseous carbon monoxide or carbon dioxide and is volatilized into the surrounding environment. The machining process is an etching process since the sample 12 to be machined is removed.
As an example, the conductor probe 13 is an atomic force microscope probe or a scanning tunneling microscope probe, and the processing treatment on the sample to be processed is performed in the atomic force microscope or the scanning tunneling microscope. Preferably, the atomic force microscope is used as a nanoscale analysis instrument for studying the surface structure of the solid material, and the probe of the atomic force microscope has a nanoscale scanning function and can move according to a set processing path. The probe may also be configured as a conductor probe for use in the localized anodization process of the present invention.
As an example, the frequency of the high frequency alternating current is greater than 1000 Hz. Preferably, the frequency range of the high frequency alternating current applied between the conductor probe 13 and the conductive layer 112 is between 5kHz and 200kHz, and the amplitude range is between 5V and 20V. As previously described, a suitable applied voltage U is settotalAnd alternating current angular frequency omega, the partial pressure U between the tip and the sample surface required for the reaction can be obtained. The specific frequency of the high frequency alternating current depends on the size of the sample 12 to be processed, and the smaller the size, the higher the frequency required for processing.
As an example, when the atomic force microscope is used as the processing platform of the present invention, the sample to be processed 12 is processed after the operation mode of the atomic force microscope is set to the contact mode. The atomic force microscope has a contact mode and a tapping mode, and in the contact mode, the probe directly contacts the surface of the substrate 112, and the distance between the probe and the sample 12 to be processed is the minimum, so that the formation of the water bridge 15 is facilitated, and the electrochemical reaction of local anodic oxidation is facilitated. Before the sample 12 to be processed is processed, the operation mode of the atomic force microscope can be set to a tapping mode, and the surface topography of the sample 12 to be processed is obtained, so as to determine the processing target area and the processing path. The tapping mode is also one of the operating modes of the atomic force microscope, and in the operating mode, the probe does not scrape the surface of the sample 12 to be processed, and as a means for acquiring the surface topography of the sample 12 to be processed, the probe does not damage the sample 12 to be processed before processing.
The moving speed range of the tip of the atomic force microscope probe moving along the processing path is between 1 and 10 mu m/s. Considering the occurrence speed of the local anodic oxidation reaction, the oxidation reaction of the sample 12 to be processed on the moving path is ensured to be complete, and a certain etching rate can be ensured to be maintained. The atomic force microscope can be used for representing the surface appearance of a sample, and after the processing is finished, the voltage can be immediately turned off for appearance measurement, and the processing result is detected, so that the quasi-real-time monitoring is realized. Under the contact mode of the atomic force microscope, the pressure applied by the tip of the atomic force microscope probe ranges from 500nN to 2000 nN. A suitable pressure range in the atomic force microscope contact mode is selected according to the material characteristics of the conductor probe 13, the sample to be processed 12, and the substrate 11 thereunder.
As an example, in order to form the water bridge 15 between the conductor probe 13 and the surface of the sample 12 to be processed during the processing, before applying the high-frequency alternating current between the conductor probe 13 and the conductive layer 112, the humidity and the temperature of the environment in which the conductor probe 13 and the sample 12 to be processed are located need to be controlled, so that the strong electric field gradient between the conductor probe 13 and the surface of the sample 12 to be processed can adsorb water molecules in the air and form an adsorbed water layer. As described above, by forming the water bridge 15, the anodic oxidation reaction is controlled to occur within the range covered by the water bridge 15, and the process is completed. The relative humidity range of the environment where the conductor probe 13 is located after the regulation is between 50% and 70%, and the temperature range of the environment where the conductor probe 13 is located after the regulation is between 20 ℃ and 30 ℃. By regulating and controlling the relative humidity and temperature of the environment, water molecules in the air can be easily adsorbed between the conductor probe 13 and the surface of the sample 12 to be processed under a strong electric field, and an adsorbed water layer is formed.
As an example, after the processing treatment is completed, the sample 12 to be processed may be placed in an environment with a preset relative humidity or a preset temperature to remove an adsorbed water layer formed on the surface of the sample 12 to be processed. Since an adsorbed water layer is generated between the conductor probe 13 and the surface of the sample 12 to be processed during the processing, there is still a possibility that an adsorbed water layer remains on the surface of the sample 12 to be processed after the processing is finished. In order to prevent the residual adsorbed water layer from affecting the sample and the subsequent processes, the adsorbed water layer needs to be removed in time. The preset relative humidity is less than or equal to 10%, and the preset temperature is greater than or equal to 120 ℃. The adsorbed water layer on the surface of the sample 12 to be processed can be effectively removed by controlling the temperature and the humidity.
Two embodiments of the high-frequency ac-driven local anodization method according to the present invention are provided below to illustrate the advantages and effects of the high-frequency ac-driven local anodization method according to the present invention.
Example one
Referring to fig. 5, the high-frequency ac-driven local anodization method provided by the present invention can be used for etching graphene nanoribbons, and includes the following main steps:
1) a single-layer graphene sample 21 was prepared on a silicon dioxide substrate by a mechanical lift-off method. Preferably, the thickness of the silicon dioxide substrate is 300nm, and the silicon dioxide substrate is positioned on the heavily doped conductive silicon substrate;
2) and connecting the conductive silicon substrate with one end of the output end of a high-frequency alternating-current power supply signal generator, and placing the conductive silicon substrate on a scanning table of an atomic force microscope. Connecting the other end of the output end of the high-frequency alternating-current power supply signal generator with an atomic force microscope probe serving as a conductor probe 13;
3) setting the atomic force microscope in a tapping mode, scanning to obtain the surface appearance and the specific position of the single-layer graphene sample 21, and determining a target area to be etched and an etching path 22;
4) regulating the relative humidity of the environment to 50-70%, regulating the temperature of the environment to 20-30 ℃, and preferably regulating the temperature of the environment to 25 ℃;
5) and moving the needle tip of the atomic force microscope probe to a region to be etched, starting a signal generator and outputting a sine wave with amplitude of 10V at 50-200 kHz (the specific frequency depends on the size of a sample, and the smaller the size, the higher the frequency is needed). The atomic force microscope was switched to either contact mode or lift mode (lift mode) with the tip applied pressure maintained at about 1500 nN. Under the conditions of humidity and temperature, a water bridge 15 is formed between the needle tip of the atomic force microscope probe and the single-layer graphene sample due to the adsorption of water molecules by a strong electric field;
6) and moving the tip of the atomic force microscope probe according to the preset etching path 22 to etch. The needle tip moving speed range of the atomic force microscope probe is between 1 and 10 mu m/s. In the region where the tip of the atomic force microscope probe passes, the graphene surface covered by the water bridge 15 is oxidized into carbon dioxide or carbon monoxide through an electrochemical reaction, so that the carbon dioxide or carbon monoxide is etched and removed;
7) and taking out the etched sample, and placing the sample in a low humidity environment (the relative humidity is less than 10%) or heating the sample to be more than or equal to 120 ℃ so as to remove water molecules possibly adsorbed on the surface of the sample in the etching process.
Fig. 5 shows an atomic force microscope topography of the graphene nanoribbon obtained after etching. And in the etching process, the needle tip of the atomic force microscope probe moves along the etching path 22, and the single-layer graphene on the etching path 22 is oxidized into carbon dioxide or carbon monoxide and removed. The enlarged partial view 24 in the upper right corner is an enlarged view of the frame area 23. As can be seen from the enlarged view, the etched graphene nanoribbons have uniform line width and space and good surface appearance.
Example two
Referring to fig. 6 to 7, the high-frequency ac-driven local anodization method provided in the present invention can also be used for cutting carbon nanotubes, and the main steps are as follows:
1) and growing single-walled carbon nanotubes 31 on the hexagonal boron nitride film. Preferably, the hexagonal boron nitride film is prepared on a silicon dioxide/silicon substrate by a mechanical stripping method;
2) and connecting the conductive silicon substrate base with one end of the output end of a high-frequency alternating-current power supply signal generator, and placing the conductive silicon substrate base on a scanning table of an atomic force microscope. Connecting the other end of the output end of the high-frequency alternating-current power supply signal generator with an atomic force microscope probe serving as a conductor probe 13;
3) setting the atomic force microscope into a tapping mode, scanning to obtain the surface appearance and the specific position of the carbon nanotube sample 31, and determining a cutting path 32;
4) regulating the relative humidity of the environment to 50-70%, regulating the temperature of the environment to 20-30 ℃, and preferably regulating the temperature of the environment to 25 ℃;
5) the tip of the atomic force microscope probe was moved to the area to be machined, the signal generator was turned on and a sine wave of amplitude 10V was output at 5kHz (the specific frequency depends on the sample size, the smaller the size the higher the frequency is required). The atomic force microscope was switched to either contact mode or lift mode (lift mode) with the tip applied pressure maintained at about 1500 nN. Under the conditions of humidity and temperature, water molecules are adsorbed between the needle tip of the atomic force microscope probe and the single-walled carbon nanotube 31 sample due to a strong electric field, and a water bridge 15 is formed;
6) moving the tip of the atomic force microscope probe along the cutting path 32, wherein the moving speed of the tip of the atomic force microscope probe ranges from 1 μm/s to 10 μm/s, and the carbon nanotube covered by the water bridge 15 is oxidized into carbon dioxide or carbon monoxide and removed, so that the carbon nanotube is cut;
7) and taking out the etched sample, and placing the sample in a low humidity environment (the relative humidity is less than 10%) or heating the sample to be more than or equal to 120 ℃ so as to remove water molecules possibly adsorbed on the surface of the sample in the etching process.
Fig. 6 shows an atomic force microscope topography of the carbon nanotube 31 before cutting. The arrows in the figure are the cutting path 32 that the tip of the afm probe is moved. Fig. 7 shows an atomic force microscope topography of the carbon nanotube 33 after cutting. It is noted that the carbon nanotubes 33 in FIG. 7 have been angled by the tip of an atomic force microscope to facilitate viewing of the cuts. As can be seen from the figure, the carbon nanotube 31 is cut into five segments according to the predetermined cutting path 32, and the shape of each segment of the carbon nanotube is substantially intact.
In summary, the present invention provides a local anodization method driven by high-frequency ac power. The high-frequency alternating current driven local anodic oxidation processing method comprises the steps of providing a substrate, a sample to be processed and a conductor probe, wherein the sample to be processed is located on the substrate, the substrate is of a double-layer structure comprising a dielectric layer and a conducting layer, the dielectric layer is located above the conducting layer and is in contact with the sample to be processed, high-frequency alternating current voltage is applied between the conductor probe and the conducting layer, and the conductor probe moves on the surface of the sample to be processed along a processing path so that the sample to be processed on the processing path is oxidized. The invention introduces a high-frequency alternating current driven local anodic oxidation processing method for processing low-dimensional nano samples on an insulating substrate, the process is simple, micro-nano electrodes do not need to be processed, organic pollution is avoided, and the processing quality is greatly improved compared with the traditional direct current anodic oxidation method.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A high-frequency alternating-current-driven local anodizing method is characterized by comprising the following steps:
providing a substrate, a sample to be processed and a conductor probe, wherein the sample to be processed is positioned on the substrate, the substrate is of a double-layer structure comprising a dielectric layer and a conductive layer, the dielectric layer is positioned above the conductive layer and is in contact with the sample to be processed, a high-frequency alternating voltage is applied between the conductor probe and the conductive layer, and the conductor probe moves on the surface of the sample to be processed along a processing path, so that the sample to be processed on the processing path is oxidized.
2. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the dielectric layer material comprises SiO2、hBN、GeO2、Al2O3、HfO2、BaTiO3PMN-PT, mica, PMMA, PC or PVC.
3. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the conductive layer material comprises Si, Ge, graphite, metal or conductive ionic liquid.
4. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the sample to be processed is a conductive low-dimensional nano material.
5. The high frequency alternating current driven local anodizing process of claim 4, wherein: the conductive low-dimensional nanomaterial at least comprises graphene or carbon nanotubes, and the graphene or carbon nanotubes are oxidized into carbon monoxide or carbon dioxide in the processing process and are etched and removed.
6. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: and the conductor probe is an atomic force microscope probe or a scanning tunnel microscope probe, and the sample to be processed is processed in the atomic force microscope or the scanning tunnel microscope.
7. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the frequency of the high-frequency alternating current is more than 1000 Hz.
8. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: in the whole processing process, the sample to be processed is connected with the conductor needle point through a nano-sized water bridge.
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| US20060222869A1 (en) * | 2005-04-04 | 2006-10-05 | Yuguang Cai | Electropen lithography |
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| US20100243472A1 (en) * | 2009-03-27 | 2010-09-30 | Eui-Hyeok Yang | High-throughput local oxidation nanolithographic process |
| US9911574B2 (en) * | 2015-08-14 | 2018-03-06 | The Trustees of Princeton University, Office of Technology and Trademark Licensing | Scanning probe lithography methods utilizing an enclosed sinusoidal pattern |
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| CN101667611A (en) * | 2009-09-15 | 2010-03-10 | 上海交通大学 | Preparation method of solar micro battery on basis of directional carbon nano tube |
| CN105793776A (en) * | 2013-09-16 | 2016-07-20 | 瑞士力托股份公司 | Scanning probe nanolithography system and method |
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