CN108557755A - A kind of local anodic oxidation processing method of high-frequency ac electric drive - Google Patents

A kind of local anodic oxidation processing method of high-frequency ac electric drive Download PDF

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CN108557755A
CN108557755A CN201810530466.0A CN201810530466A CN108557755A CN 108557755 A CN108557755 A CN 108557755A CN 201810530466 A CN201810530466 A CN 201810530466A CN 108557755 A CN108557755 A CN 108557755A
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sample
processed
frequency
electric drive
anodic oxidation
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CN108557755B (en
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史志文
李宏元
邓奥林
应哲
吕博赛
王乐乐
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Shanghai Jiaotong University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/022Anodisation on selected surface areas
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/024Anodisation under pulsed or modulated current or potential

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Organic Chemistry (AREA)
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Abstract

The present invention provides a kind of local anodic oxidation processing methods of high-frequency ac electric drive, including:One substrate, a sample to be processed and a conductor probe are provided, the sample to be processed is located on the substrate, the substrate is the double-layer structure comprising dielectric layer and conductive layer, the dielectric layer is located above the conductive layer and is in contact with the sample to be processed, apply high-frequency ac voltage between the conductor probe and the conductive layer, the conductor probe is moved in the sample surfaces to be processed along machining path, so that the sample to be processed on the machining path is aoxidized.The local anodic oxidation processing method of high-frequency ac electric drive provided by the invention is suitable for low-dimensional nanotube sample processing etching, and simple for process, without processing micro-nano electrode, and processing quality is better than Traditional DC electricity anode oxidation method.

Description

A kind of local anodic oxidation processing method of high-frequency ac electric drive
Technical field
The present invention relates to nanoprocessing sciemtifec and technical spheres, more particularly to a kind of local anodic oxidation of high-frequency ac electric drive Processing method.
Background technology
Currently used micro-nano processing technology mainly have electron beam exposure (Electron Beam Lithography), Optical exposure (Photon Lithography), scanning probe direct write processing (Scanning Probe Lithography) etc.. Electron beam exposure and optical exposure need first to cover one layer of organic matter resist in sample surfaces in process, then use high energy Electron beam or light beam are radiated at resist surface and form required pattern, then are transferred the pattern onto on sample by means such as etchings, most Resist is removed afterwards.The disadvantage is that organic matter resist is often difficult to clean off totally, and needs to introduce chemical solvent when removing resist, It can further contaminated samples.
The operating procedure for scanning the processing of probe direct write is simple, is a kind of clean processing without introducing the organic matters such as resist Technology.Its basic functional principle is to pass through power, heat, light, electricity or chemical action local when scanning probe with material surface contact Ground changes the property of material, to directly form required pattern in material surface.Local anodic oxidation is that scanning probe direct write adds A kind of very effective Principle Method, is as follows in work:Apply one between sample and the needle point of scanning probe directly Galvanic electricity pressure, sample access anode, needle point accesses cathode, since adsorbed water molecule is understood in the presence of highfield between needle point and sample, And form " the water bridge " of adsorbed water layer composition.Water bridge constitutes the electrochemical reaction cell of a nanoscale with sample and needle point. The sample surfaces of the overlay areas Shui Qiao occur electrochemical reaction and are changed, and the position of electrochemical reaction generation occurs with needle point position Movement is set, control needle point is moved by machining path, you can pattern needed for being formed on sample.
Existing local anodizing uses DC voltage, when the substrate of nanotube sample to be processed is insulator, needs Electrode is prepared on nanotube sample in advance to facilitate connecting wire.For micro/nano level small sample, electrode is prepared on its surface The process is more complicated, needs to prepare electrode by electron beam exposure or optical exposure combination evaporation coating techniques.The operation Process is not only complicated, but also can introduce organic pollution sample.Therefore, existing direct current local anodizing technology is being processed When handling micro/nano level sample, procedure of processing is cumbersome, and organic pollution easily occurs.In addition, existing processing technology is for stone When black alkene one kind material performs etching, be etched part generally can not complete oxidation, generated solid oxidation product can be residual It stays in sample surfaces.
Therefore, it is processed for the high quality of the nanotube sample in dielectric substrate, it is necessary to propose a kind of new local anode Processing method is aoxidized, is solved the above problems.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of novel local anodic oxidations to add Work method, for solving existing direct current local anodizing technology for the target nano material processing difficulties in dielectric substrate And the problem that processing quality is low.
To achieve the above object and other related purposes, the present invention provide a kind of local anodic oxygen of high-frequency ac electric drive Change processing method, which is characterized in that the local anodic oxidation processing method of the high-frequency ac electric drive includes:
A substrate, a sample to be processed and a conductor probe are provided, the sample to be processed is located on the substrate, described Substrate is the double-layer structure comprising dielectric layer and conductive layer, and the dielectric layer is located above the conductive layer and is waited for described Processed sample is in contact, and applies high-frequency ac voltage between the conductor probe and the conductive layer, and the conductor probe exists The sample surfaces to be processed are moved along machining path, so that the sample to be processed on the machining path is aoxidized.
As a preferred embodiment of the present invention, the dielectric layer material includes SiO2、hBN、GeO2、Al2O3、HfO2、 BaTiO3, PMN-PT, mica, PMMA, PC or PVC.
As a preferred embodiment of the present invention, the conductive includes Si, Ge, graphite, metal or conductive ion Liquid.
As a preferred embodiment of the present invention, the sample to be processed is conductive low-dimension nano material.
As a preferred embodiment of the present invention, the conduction low-dimension nano material includes at least graphene or carbon nanometer Pipe, the graphene or carbon nanotube are oxidized to carbon monoxide or carbon dioxide in the process, to be etched Removal.
As a preferred embodiment of the present invention, the conductor probe is atomic force microscope probe or scanning tunneling microscopic Mirror probe is processed the sample to be processed and is carried out in atomic force microscope or scanning tunneling microscope.
As a preferred embodiment of the present invention, the frequency of the high-frequency alternating current is more than 1000Hz.
As a preferred embodiment of the present invention, in whole process, the sample to be processed and the conductor needle point It is connect by a nano-scale water bridging.
As described above, the present invention provides a kind of local anodic oxidation processing method of high-frequency ac electric drive, have following Advantageous effect:
Present invention introduces a kind of local anodic oxidation processing methods of high-frequency ac electric drive, are suitable in dielectric substrate Micro-nano sample is processed, simple for process, easy to operate without processing micro-nano electrode, and not will produce organic pollution.In addition, by carving Lose partial oxidation it is complete, will not residual solids incomplete oxidation product, processing quality be better than Traditional DC electricity anode oxidation method.
Description of the drawings
Fig. 1 is shown as the cross of the local anodic oxidation processing method of the high-frequency ac electric drive provided in the embodiment of the present invention Schematic cross-section.
Fig. 2 is shown as the local anodic oxidation processing method etching of the high-frequency ac electric drive provided in the embodiment of the present invention Schematic diagram.
Fig. 3 is shown as the local anodic oxidation processing method etching of the high-frequency ac electric drive provided in the embodiment of the present invention Amplification sectional view when beginning.
Fig. 4 is shown as the local anodic oxidation processing method etching of the high-frequency ac electric drive provided in the embodiment of the present invention Amplification sectional view in the process.
Fig. 5 is shown as the atomic force microscope pattern of the graphene nanobelt after the etching provided in the embodiment of the present invention one Figure.
Fig. 6 is shown as the atomic force microscope shape appearance figure of the carbon nanotube before the cutting provided in the embodiment of the present invention two.
Fig. 7 is shown as the atomic force microscope shape appearance figure of the carbon nanotube after the cutting provided in the embodiment of the present invention two.
Component label instructions
11 substrates
111 dielectric layers
112 conductive layers
12 samples to be processed
13 conductor probes
14 high-frequency ac voltages
15 water bridges
16 machining paths
17 equivalent resistances
18 equivalent capacitys
21 single-layer graphene samples
22 etching paths
23 frame favored areas
24 partial enlarged views
Carbon nanotube before 31 cuttings
32 cutting paths
Carbon nanotube after 33 cuttings
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example Disclosed content understands the further advantage and effect of the present invention easily.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Fig. 7.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can be a kind of random change, and its Assembly layout form may also be increasingly complex.
As shown in Figures 1 to 4, the present invention provides a kind of local anodic oxidation processing method of high-frequency ac electric drive, The local anodic oxidation processing method of the high-frequency ac electric drive includes:
A substrate 11, a 12 and one conductor probe 13 of sample to be processed are provided, the sample 12 to be processed is located at the lining On bottom 11, the substrate 11 is the double-layer structure comprising dielectric layer 111 and conductive layer 112, and the dielectric layer 111 is located at institute It states 112 top of conductive layer and is in contact with the sample 12 to be processed, between the conductor probe 13 and the conductive layer 112 Applying high-frequency ac voltage 14, the conductor probe 13 moves on 12 surface of sample to be processed along machining path 16, so that The sample 12 to be processed obtained on the machining path 16 is aoxidized.
Referring to Fig. 1, the local anodic oxidation processing method of high-frequency ac electric drive of the present invention can be used for insulating The sample of substrate is processed.The sample to be processed 12 is prepared on the substrate 11.The substrate 11 divides for 111 He of dielectric layer Two layers of conductive layer 112, the dielectric layer 111 connect the sample to be processed 12;The conductor probe 13 and the conductive layer 112 are separately connected the high-frequency ac voltage 14, and by applying the high-frequency ac voltage 14, the conductor probe 13 is described 12 surface of sample to be processed is moved according to the machining path 16, and completes process.
The sample to be processed 12 aoxidizes under the action of the high-frequency ac voltage 14, if the sample to be processed Product 12 become volatile materials after oxidation, such as oxidation of coal is carbon monoxide or carbon dioxide, then the process is a kind of Etching process can be used for etching the sample to be processed 12;If the sample to be processed 12 is still solid after oxidation, The process forms the oxide pattern of the material in material surface.As shown in Fig. 2, the sample to be processed 12 is after oxidation It is a kind of etching process as volatile materials.The conductor probe 13 is moved along the machining path 16, mobile route On the sample 12 to be processed aoxidized after volatilize, and be removed, to complete the etching process.It is only shown in Fig. 2 The tip portion of the conductor probe 13.
Fig. 3 and Fig. 4 are please referred to, is when process just starts, the conductor probe 13 is waited for close to described in figure 3 Processed sample 12, also not in contact with 12 surface of sample to be processed when amplification schematic cross-section.In such a system, the electricity is situated between Matter layer 111 with above and below it the sample 12 to be processed and the conductive layer 112 constitute equivalent capacity 18 together, capacitance note For C;Non-homogeneous highfield between the conductor probe 13 and 12 surface of sample to be processed can adsorb the moisture in air Son, and water bridge 15 is formed, the resistance value of equivalent resistance 17 is denoted as R.When the conductor probe 13 and the conductive layer 112 it Between apply a high-frequency ac voltage 14, voltage UtotalWhen, the electricity divided between needle point and sample surfaces is easily calculated Pressure U is U=UtotalR/ (R+1/j ω C), wherein ω are pulsation, and j is imaginary unit.According to above-mentioned formula and office The needs of domain anodic oxidation reactions adjust the voltage U of applicationtotalAnd pulsation ω, the needle needed for reaction can be obtained U is divided between point and sample surfaces.The water bridge 15, the needle point of the conductor probe 13 and 12 surface of sample to be processed It can be seen as the electrolytic cell of a nanoscale.In high-frequency ac voltage 14 within the half period that sample surfaces are positive voltage, The sample to be processed 12 is used as anode, surface that oxidation reaction occurs.The water bridge 15 of nano-scale can control described The occurrence scope of oxidation reaction.Therefore, the occurrence scope of the local electrochemical reaction is happened in the mobile route of needle point.And In another half period of high-frequency ac voltage 14, the sample 12 to be processed connects cathode, and the conductor probe 13 connects anode, due to Probe material is generally stable inert metal material, cannot participate in electrochemical reaction.As shown in figure 4, being in etching process Amplify schematic cross-section.At this point, the conductor probe 13 touches the substrate 11, the sample 12 to be processed between them Be etched away before contact, the water bridge 15 around the conductor probe 13 can still cover be not etched described in wait for Processed sample 12, sample 12 to be processed described in this part can and the conductor probe 13, the dielectric layer 111 and the conduction Layer 112 is formed into a loop, and occurs to aoxidize and be etched under the action of high-frequency ac voltage 14.The edge described in the conductor probe 13 When machining path 16 is slowly mobile, the part gradually covered by the water bridge 15 on the sample 12 to be processed will be by gradually It etches away.
As an example, 111 material of the dielectric layer includes SiO2、hBN、GeO2、Al2O3、HfO2、BaTiO3、PMN-PT、 Mica, PMMA, PC or PVC.Wherein, silica (SiO2) layer can be as the substrate of graphene;Hexagonal boron nitride (hBN) layer It can be as the substrate of carbon nanotube.
As an example, 112 material of the conductive layer includes Si, Ge, graphite, metal or conductive ion liquid.Preferably, institute It is silicon substrate to state conductive layer 112.
As an example, the sample to be processed 12 is conductive low-dimension nano material.The sample to be processed 12 has itself Preferable electric conductivity can be one-dimensional nanometer piping material or two-dimensional nano film material.
As an example, the conduction low-dimensional materials include at least graphene or carbon nanotube, the graphene or carbon nanometer Pipe is oxidized to carbon monoxide or carbon dioxide in the process, to the removal that is etched.As it was noted above, working as carbon materials After material is aoxidized, becomes gaseous carbon monoxide or carbon dioxide and evaporate into ambient enviroment.It is described to be added due to eliminating Work sample 12, so the process is a kind of etching process.
As an example, the conductor probe 13 is atomic force microscope probe or tunneling scanning microscope probe, to described Sample to be processed is processed to carry out in atomic force microscope or scanning tunneling microscope.Preferably, atomic force microscopy Mirror has nano level scanning function as a kind of nanoscale analysis instrument of research solid material surface structure, probe, and It can be moved according to the machining path of setting.Its probe can also be configured to conductor probe, for the local anode in the present invention Oxidation processing.
As an example, the frequency of the high-frequency alternating current is more than 1000Hz.Preferably, the conductor probe 13 with it is described The frequency range of the high-frequency alternating current applied between conductive layer 112 between 5kHz~200kHz, amplitude range between 5V~ Between 20V.As it was noted above, setting is suitable to apply voltage UtotalAnd pulsation ω, it can obtain needed for reaction Partial pressure U between needle point and sample surfaces.The specific frequency of the high-frequency alternating current depends on the ruler of the sample 12 to be processed Very little, size is smaller, and it is higher to process required frequency.
As an example, when using the atomic force microscope as processing platform of the invention, the atomic force is shown The operating mode of micro mirror is processed the sample 12 to be processed after being disposed in contact with pattern.The atomic force microscope With the operating modes such as contact and tapping-mode, under contact mode, probe is in direct contact 112 surface of the substrate, at this moment Probe, apart from minimum, is conducive to the water bridge 15 formation, in favor of the electricity of local anodic oxidation occurs with the sample 12 to be processed Chemical reaction.It, can also be by the Working mould of the atomic force microscope before being processed to the sample 12 to be processed Formula is set as tapping-mode and obtains the surface topography of the sample to be processed 12, with determine processing target area and it is described plus The step of work path.The tapping-mode is also one of operating mode of atomic force microscope, and in this operating mode, probe is not 12 surface of sample to be processed can be scraped, as the means for obtaining 12 surface topography of sample to be processed, will not added Just the sample 12 to be processed is damaged before work.
The movement speed range that the needle point of the atomic force microscope probe is moved along the machining path between 1 μm/s~ Between 10 μm/s.In view of the generation speed of local anodic oxidation reactions, it is ensured that the sample 12 to be processed on mobile route Oxidation reaction occur complete, while can ensure that the etch rate for remaining certain again.Since described atomic force microscope itself can For being characterized to sample surface morphology, after processing is completed, voltage can be closed immediately and carries out topography measurement, to processing As a result it is detected, is quasi real time monitored to realize.Under the contact mode of the atomic force microscope, the atomic force microscopy The needle point pressure applied range of mirror probe is between 500nN~2000nN.According to the conductor probe 13, described to be added Work sample 12 and its under the substrate 11 material property, selection suitably pressed under the atomic force microscope contact mode Power range.
As an example, in process, in order between the conductor probe 13 and 12 surface of sample to be processed The water bridge 15 is formed, before applying high-frequency alternating current between the conductor probe 13 and the conductive layer 112, needs The humidity and temperature of the conductor probe 13 and 12 local environment of sample to be processed make the conductor probe 13 and described Strong electric field gradient between 12 surface of sample to be processed can adsorb the hydrone in air and form adsorbed water layer.Such as institute above It states, by forming water bridge 15, in the range of the water bridge 15 is covered anodic oxidation reactions occur for control, and complete processed Journey.The RH range of 13 local environment of conductor probe is described after regulation and control to lead between 50%~70% after regulation and control The temperature range of 13 local environment of body probe is between 20 DEG C~30 DEG C.It, can be with by Regulate Environment relative humidity and temperature Make to be easy to adsorb under strong electric field between the conductor probe 13 and 12 surface of sample to be processed hydrone and shape in air At adsorbed water layer.
As an example, after the completion of working process, the sample 12 to be processed can also be placed in default relative humidity or In the environment of preset temperature, to remove the adsorbed water layer that 12 surface of sample to be processed is formed.Due in process, institute It states and generates adsorbed water layer between conductor probe 13 and 12 surface of sample to be processed, it is described to be added after process 12 surface of work sample is it is possible to remain adsorbed water layer.Remaining adsorbed water layer influences sample and follow-up process in order to prevent, It needs in time to remove adsorbed water layer clean.The default relative humidity is less than or equal to 10%, and the preset temperature is more than or equal to 120℃.The adsorbed water layer on 12 surface of sample to be processed can be effectively removed by controlling temperature and humidity.
Two implementations of the local anodic oxidation processing method presented below based on high-frequency ac electric drive of the present invention The advantages of example, local anodic oxidation processing method to be specifically described heretofore described high-frequency ac electric drive and effect.
Embodiment one
Referring to Fig. 5, the local anodic oxidation processing method of high-frequency ac electric drive provided by the present invention can be used for Graphene nanobelt is etched, key step is as follows:
1) it is by mechanically pulling off method and prepares single-layer graphene sample 21 in silicon dioxide substrates.Preferably, the dioxy The thickness of silicon substrate is 300nm, and on heavy doping conductive silicon substrate;
2) conductive silicon substrate is connected with one end of high-frequency alternating current source signal generator output end, and is placed In on afm scan platform.By the other end of high-frequency alternating current source signal generator output end and as conductor probe 13 Atomic force microscope probe be connected;
3) atomic force microscope is set to tapping-mode, scanning obtains the surface of the single-layer graphene sample 21 Pattern and specific location, and determine the target area for needing to etch and etching path 22;
4) Regulate Environment relative humidity is to 50%~70%, and Regulate Environment temperature is to 20 DEG C~30 DEG C, preferred environment temperature Degree is 25 DEG C;
5) needle point of the atomic force microscope probe is moved to region to be etched, open signal generator simultaneously exports 50 ~200kHz (specific frequency depends on sample size, and size is smaller to need frequency higher), the sine wave of 10V amplitudes.It will be described Atomic force microscope switches to contact mode or lifting pattern (lift mode), and needle point applies pressure and is maintained at about 1500nN. It, can be due to strong between the needle point and single-layer graphene sample of the atomic force microscope probe under above-mentioned humidity and temperature condition Electric field adsorbed water molecule simultaneously forms water bridge 15;
6) according to the needle point of preset etching 22 moving atomic force microscope probe of path to perform etching.Institute The needle point movement speed range of atomic force microscope probe is stated between 1 μm/s~10 μm/s.In the atomic force microscope probe The region passed through of needle point, the graphene surface that the water bridge 15 is covered occurs electrochemical reaction and is oxidized to titanium dioxide Carbon or carbon monoxide, to the removal that is etched;
7) sample after etching is taken out, low-humidity environment (relative humidity is less than 10%) is placed it in or is heated to More than or equal to 120 DEG C, to remove the hydrone that may be adsorbed on sample surfaces in etching process.
Fig. 5 illustrates the atomic force microscope shape appearance figure of the graphene nanobelt obtained after etching.Wherein light areas is The single-layer graphene 21, in etching process, the needle point of the atomic force microscope probe is moved along the etching path 22, And the single-layer graphene on the etching path 22 is oxidized to carbon dioxide or carbon monoxide and is removed.It puts the part in the upper right corner Big Figure 24 is the enlarged drawing of the frame favored area 23.From in enlarged drawing as can be seen that etching after graphene nanobelt line width and Spacing is uniform, and surface topography is intact.
Embodiment two
Fig. 6 to Fig. 7 is please referred to, the local anodic oxidation processing method of high-frequency ac electric drive provided by the present invention may be used also For the cutting of carbon nanotube, key step is as follows:
1) growth prepares single-walled carbon nanotube 31 on hexagonal boron nitride film.Preferably, the hexagonal boron nitride film The method of being by mechanically pulling off is prepared on silica/silicon substrate;
2) the conductive silicon substrate pedestal is connected with one end of high-frequency alternating current source signal generator output end, and by its It puts as on afm scan platform.The other end of high-frequency alternating current source signal generator output end is visited with as conductor The atomic force microscope probe of needle 13 is connected;
3) atomic force microscope is set to tapping-mode, scanning obtains the surface shape of the carbon nanotube-sample 31 Looks and specific location, and determine cutting path 32;
4) Regulate Environment relative humidity is to 50%~70%, and Regulate Environment temperature is to 20 DEG C~30 DEG C, preferred environment temperature Degree is 25 DEG C;
5) needle point of atomic force microscope probe is moved to region to be processed, open signal generator simultaneously exports 5kHz (specific frequency depends on sample size, and size is smaller to need frequency higher), the sine wave of 10V amplitudes.The atomic force is shown Micro mirror switches to contact mode or lifting pattern (lift mode), and needle point applies pressure and is maintained at about 1500nN.Above-mentioned wet It, can be due to highfield between 31 sample of needle point and single-walled carbon nanotube of the atomic force microscope probe under degree and temperature condition Adsorbed water molecule simultaneously forms water bridge 15;
6) needle point of atomic force microscope probe is moved along the cutting path 32, the atomic force microscope probe For needle point movement speed range between 1 μm/s~10 μm/s, the carbon nanotube that the water bridge 15 is covered is oxidized to carbon dioxide Or carbon monoxide and remove, to complete the cutting to carbon nanotube;
7) sample after etching is taken out, low-humidity environment (relative humidity is less than 10%) is placed it in or is heated to More than or equal to 120 DEG C, to remove the hydrone that may be adsorbed on sample surfaces in etching process.
Fig. 6 illustrates the atomic force microscope shape appearance figure of the carbon nanotube 31 before cutting.Arrow in figure is described The cutting path 32 that the needle point of atomic force microscope probe is moved.Fig. 7 illustrates the carbon nanotube 33 after cutting Atomic force microscope shape appearance figure.It is worth noting that, for convenience of observation cutting mouth, carbon nanotube 33 described in Fig. 7 is Certain angle has been stirred by atomic-force microscope needle-tip.It can be seen from the figure that the carbon nanotube 31 is according to scheduled institute It states cutting path 32 and is cut into five sections, every section of carbon nanotube pattern is substantially intact.
In conclusion the present invention provides a kind of local anodic oxidation processing methods of high-frequency ac electric drive.The height It includes providing a substrate, a sample to be processed and a conductor probe, institute that frequency, which exchanges electrically driven (operated) local anodic oxidation processing method, It states sample to be processed to be located on the substrate, the substrate is the double-layer structure comprising dielectric layer and conductive layer, and the electricity is situated between Matter layer is located above the conductive layer and is in contact with the sample to be processed, between the conductor probe and the conductive layer Apply high-frequency ac voltage, the conductor probe is moved in the sample surfaces to be processed along machining path, so that described add The sample to be processed on work path is aoxidized.Present invention introduces a kind of local anodic oxidation of high-frequency ac electric drive processing Method, it is simple for process for the low-dimensional nanotube sample processing in dielectric substrate, without processing micro-nano electrode, avoid Machine object pollutes, and processing quality compares Traditional DC electricity anodizing and has a distinct increment.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as At all equivalent modifications or change, should by the present invention claim be covered.

Claims (8)

1. a kind of local anodic oxidation processing method of high-frequency ac electric drive, which is characterized in that the high-frequency ac electric drive Local anodic oxidation processing method include:
A substrate, a sample to be processed and a conductor probe are provided, the sample to be processed is located on the substrate, the substrate To include the double-layer structure of dielectric layer and conductive layer, the dielectric layer be located above the conductive layer and with it is described to be processed Sample is in contact, and applies high-frequency ac voltage between the conductor probe and the conductive layer, the conductor probe is described Sample surfaces to be processed are moved along machining path, so that the sample to be processed on the machining path is aoxidized.
2. the local anodic oxidation processing method of high-frequency ac electric drive according to claim 1, it is characterised in that:It is described Dielectric layer material includes SiO2、hBN、GeO2、Al2O3、HfO2、BaTiO3, PMN-PT, mica, PMMA, PC or PVC.
3. the local anodic oxidation processing method of high-frequency ac electric drive according to claim 1, it is characterised in that:It is described Conductive includes Si, Ge, graphite, metal or conductive ion liquid.
4. the local anodic oxidation processing method of high-frequency ac electric drive according to claim 1, it is characterised in that:It is described Sample to be processed is conductive low-dimension nano material.
5. the local anodic oxidation processing method of high-frequency ac electric drive according to claim 4, it is characterised in that:It is described Conductive low-dimension nano material includes at least graphene or carbon nanotube, and the graphene or carbon nanotube are in the process It is oxidized to carbon monoxide or carbon dioxide, to the removal that is etched.
6. the local anodic oxidation processing method of high-frequency ac electric drive according to claim 1, it is characterised in that:It is described Conductor probe is atomic force microscope probe or tunneling scanning microscope probe, is processed to the sample to be processed It is carried out in atomic force microscope or scanning tunneling microscope.
7. the local anodic oxidation processing method of high-frequency ac electric drive according to claim 1, it is characterised in that:It is described The frequency of high-frequency alternating current is more than 1000Hz.
8. the local anodic oxidation processing method of high-frequency ac electric drive according to claim 1, it is characterised in that:Entirely In process, the sample to be processed is connect with the conductor needle point by a nano-scale water bridging.
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