CN108551078B - Semiconductor laser beam combining device - Google Patents
Semiconductor laser beam combining device Download PDFInfo
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- CN108551078B CN108551078B CN201810385607.4A CN201810385607A CN108551078B CN 108551078 B CN108551078 B CN 108551078B CN 201810385607 A CN201810385607 A CN 201810385607A CN 108551078 B CN108551078 B CN 108551078B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
Abstract
The invention discloses a semiconductor laser beam combining device, which enables marginal light not to be fed back through a laser mode selection device, only partial low-order main laser modes are fed back, and mode selection is carried out again through a filter, so that marginal light on two sides of a slow axis light beam is filtered, only partial low-order laser modes are allowed to pass, and the marginal light is incident to an output coupling mirror to realize integral resonance, phase locking and output of laser. The beam combining device realizes the beam quality exceeding the diffraction limit of a single tube.
Description
Technical Field
The invention relates to the technical field of beam combination of semiconductor lasers, in particular to a beam combination device of a semiconductor laser.
Background
With the continuous development of science and technology, semiconductor lasers have been widely applied to daily life and work of people, and great convenience is brought to the life of people.
The semiconductor laser has obvious advantages in the aspects of efficiency, volume, service life, integration and the like, has great application prospect in the fields of industry, military and the like, but the problems of low power, large divergence angle, poor light beam quality and the like of the semiconductor laser cannot meet the requirements of the fields of civil use, industry, military and the like.
There are many methods for combining beams of existing semiconductor lasers, such as spatial combining, waveguide combining, spectral combining, coherent combining, and polarization combining. Among them, coherent beam combination and spectral beam combination have significant advantages in improving the quality of light beams, but also fail to exceed the diffraction limit of a single tube.
Therefore, how to provide a semiconductor laser beam combining device for improving the beam quality is an urgent problem to be solved by those skilled in the art.
Disclosure of Invention
In order to solve the problems, the invention provides a semiconductor laser beam combining device which realizes the beam quality exceeding the single-tube diffraction limit and realizes a method for selectively feeding back external cavity off-axis beam combination.
In order to achieve the purpose, the invention provides the following technical scheme:
a semiconductor laser combining device, the combining device comprising: the device comprises a semiconductor laser group, a fast axis collimating lens group, a slow axis collimating lens group, a fast axis and slow axis conversion device, a Fourier transform lens, a grating, a beam expanding device, a laser mode selection device, a filter and an output coupling lens;
the semiconductor laser group emits light beam groups in the same direction, and the light beam groups are emitted after passing through the fast axis collimating lens group, the slow axis collimating lens group, the fast axis and slow axis conversion device, the Fourier transform lens, the grating and the beam expanding device in sequence;
wherein the fast axis collimating mirror group is configured to reduce a fast axis direction divergence angle of the beam group, and the slow axis collimating mirror group is configured to reduce a slow axis direction divergence angle of the beam group; the fast axis and slow axis exchange device is used for exchanging the fast axis direction and the slow axis direction of the light beam group; the Fourier transform lens is used for Fourier transforming and focusing the light beam group; the grating is used for diffracting the focused light; the beam expanding device is used for performing beam expanding treatment on the diffracted light; the laser mode selection device is used for carrying out primary laser mode selection on the light beams after beam expansion processing so as to select part of low-order light modes to be reflected along a path; the filter is used for carrying out secondary laser mode selection on the light beam processed by the laser mode selection device, so that part of the light beam in the low-order mode is incident to the output coupling mirror through the filter to be output.
Preferably, in the beam combining device, the semiconductor laser group includes at least two semiconductor lasers; the fast axis collimating lens group comprises at least two fast axis collimating lenses, and each fast axis collimating lens is arranged corresponding to each semiconductor laser; the slow axis collimating lens group comprises at least two slow axis collimating lenses, and each slow axis collimating lens is arranged corresponding to each fast axis collimating lens.
Preferably, in the beam combining device, the semiconductor laser group is a single-tube semiconductor laser group, a linear semiconductor laser group, or a stacked semiconductor laser group.
Preferably, in the beam combining device, the beam expanding device is a telescopic beam expanding device.
Preferably, in the beam combining device, the laser mode selection device is a laser mode selection mirror.
Preferably, in the beam combining apparatus, the filter is a spatial filter.
Preferably, in the beam combining device, each fast axis collimator lens in the fast axis collimator lens group is provided with an antireflection film.
Preferably, in the beam combining device, each slow-axis collimator in the slow-axis collimator set is provided with an antireflection film.
Preferably, in the beam combining device, the grating is a transmission type diffraction grating.
Preferably, in the beam combining device, the grating is a reflection type diffraction grating.
As can be seen from the above description, the present invention provides a semiconductor laser beam combining device, including: the device comprises a semiconductor laser group, a fast axis collimating lens group, a slow axis collimating lens group, a fast axis and slow axis conversion device, a Fourier transform lens, a grating, a beam expanding device, a laser mode selection device, a filter and an output coupling lens; wherein the fast axis collimating mirror group is configured to reduce a fast axis direction divergence angle of the beam group, and the slow axis collimating mirror group is configured to reduce a slow axis direction divergence angle of the beam group; the fast axis and slow axis exchange device is used for exchanging the fast axis direction and the slow axis direction of the light beam group; the Fourier transform lens is used for Fourier transforming and focusing the light beam group; the grating is used for diffracting the focused light; the beam expanding device is used for performing beam expanding treatment on the diffracted light; the laser mode selection device is used for carrying out primary laser mode selection on the light beams after beam expansion processing so as to select part of low-order light modes to be reflected along a path; the filter is used for carrying out secondary laser mode selection on the light beam processed by the laser mode selection device, so that part of the light beam in the low-order mode is incident to the output coupling mirror through the filter to be output.
According to the semiconductor laser beam combining device, light at the edge is not fed back through the laser mode selection device, only a part of main laser modes are fed back, mode selection is performed through the filter again, edge light on two sides of a slow axis light beam is filtered, only the main laser modes are allowed to pass through, and the light is incident on the output coupling mirror to realize integral resonance, phase locking and output of laser.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a beam combining device of a semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a dashed box portion in a beam combining device of a semiconductor laser according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a dashed-line frame portion of another semiconductor laser beam combining device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a beam combining device of a semiconductor laser according to an embodiment of the present invention.
The beam combining device comprises: the device comprises a semiconductor laser group 1, a fast axis collimating lens group 2, a slow axis collimating lens group 3, a fast axis and slow axis conversion device 4, a Fourier transform lens 5, a grating 6, a beam expanding device 7, a laser mode selection device 8, a filter 9 and an output coupling lens 10.
The semiconductor laser group 1 emits light beam groups in the same direction, and the light beam groups sequentially pass through the fast axis collimating lens group 2, the slow axis collimating lens group 3, the fast axis and slow axis conversion device 4, the Fourier transform lens 5, the grating 6 and the beam expanding device 7 and then are emitted.
The fast axis collimating lens group 2 is used for reducing the fast axis direction divergence angle of the light beam group, and the slow axis collimating lens group 3 is used for reducing the slow axis direction divergence angle of the light beam group; the fast axis and slow axis exchanging device 4 is used for exchanging the fast axis direction and the slow axis direction of the light beam group; the Fourier transform lens 5 is used for Fourier transforming and focusing the light beam group; the grating 6 is used for diffracting the focused light; the beam expanding device 7 is used for performing beam expanding processing on the diffracted light; the laser mode selection device 8 is used for performing primary laser mode selection on the beam after beam expansion processing so as to select part of low-order optical modes to be reflected along a path; the filter 9 is used for performing the second laser mode selection on the light beam processed by the laser mode selection device, and only light beams in a few low-order modes are allowed to be incident to the output coupling mirror 10 through the filter 9 for output.
Further, the semiconductor laser group 1 includes at least two semiconductor lasers, as shown in fig. 1, the semiconductor laser group includes 1, …, n semiconductor lasers, where n is a positive integer greater than or equal to 2, and the semiconductor laser group 1 is configured to emit light beam groups in the same direction.
Optionally, the front cavity surface of each semiconductor laser is provided with an antireflection film or a diffractive optical element such as a mirror or the like instead of the antireflection film. The reflectance of the antireflection film and the film system are determined depending on the lasing wavelength of the semiconductor laser, and are not limited in the embodiments of the present invention.
Optionally, the semiconductor laser group 1 is a single-tube semiconductor laser combination.
Optionally, the semiconductor laser group 1 is a linear array semiconductor laser combination.
Optionally, the semiconductor laser group 1 is a stacked semiconductor laser assembly.
Further, fast axle collimating mirror group 2 includes two at least fast axle collimating mirrors, and every fast axle collimating mirror sets up with every semiconductor laser is corresponding, as shown in fig. 1, fast axle collimating mirror group includes 1, 2, …, a m fast axle collimating mirror to, set up corresponding fast axle collimating mirror at every semiconductor laser's light path output front end, the quantity of fast axle collimating mirror with semiconductor laser's quantity phase-match, wherein, m is more than or equal to 2 positive integer. The fast axis collimating lens group 2 is used for reducing the divergence angle of the beam group emitted by the semiconductor laser group 1 in the fast axis direction and realizing the function of outputting near parallel light in the fast axis direction.
Optionally, each fast axis collimator is provided with an antireflection film for reducing reflection of the light beam. The reflectance of the antireflection film and the film system are determined depending on the lasing wavelength of the semiconductor laser, and are not limited in the embodiments of the present invention.
Further, the slow axis collimating lens group 3 includes at least two slow axis collimating lenses, and each slow axis collimating lens is disposed corresponding to each fast axis collimating lens, as shown in fig. 1, the slow axis collimating lens group includes 1, 2, …, p slow axis collimating lenses, and the number of the fast axis collimating lenses matches with the number of the semiconductor lasers and the number of the slow axis collimating lenses, where p is a positive integer greater than or equal to 2. The slow axis collimating lens group 3 is used for reducing the divergence angle of the beam group emitted by the semiconductor laser group 1 in the slow axis direction and realizing the function of outputting nearly parallel light in the slow axis direction.
Optionally, each slow-axis collimator lens is provided with an antireflection film for reducing reflection of the light beam. The reflectance of the antireflection film and the film system are determined depending on the lasing wavelength of the semiconductor laser, and are not limited in the embodiments of the present invention.
Further, the fast axis and slow axis switching device 4 is used for switching the fast axis direction and the slow axis direction, and may be a bts (beam Transformation system) device, so as to realize the superposition of the light spots in the fast axis direction.
Further, the fourier transform lens 5 is configured to perform fourier transform on the beam group and focus the beam group, and it should be noted that the semiconductor laser beam combining apparatus may directly focus the beam group emitted by the semiconductor laser group by adjusting a positional relationship of the semiconductor laser group.
Further, the grating 6 is a transmission type diffraction grating or a reflection type diffraction grating, and is not limited in the embodiment of the present invention.
The beam expander 7 is a telescopic beam expander for expanding the light beam in the slow axis direction, and includes, but is not limited to, a keplerian type, a galileo type, and the like, and may be determined according to the case of a semiconductor laser beam combining device.
Further, the laser mode selection device 8 includes, but is not limited to, a laser mode selection mirror.
Specifically, the reflectivity and wavelength of the laser mode selection mirror are not limited in the embodiment of the present invention, and may be determined according to the specific situation of the semiconductor laser beam combining device.
Further, the filter 9 includes, but is not limited to, a spatial filter, which may be a single-edge slit spatial filter, or a double-edge slit spatial filter, and a specific form thereof is also not limited in the embodiment of the present invention, and may be determined according to specific situations.
Further, the reflectivity and wavelength of the output coupling mirror 10 are not limited in the embodiment of the present invention, and may be determined according to the specific situation of the semiconductor laser beam combining device.
Based on the semiconductor laser beam combining device, specific working principles of the semiconductor laser beam combining device are explained below.
As shown in fig. 1, the semiconductor laser group includes 1, 2, …, n semiconductor lasers, and optionally, an antireflection film is coated on a front cavity surface of each semiconductor laser, a light beam group emitted by the semiconductor laser group passes through a fast axis collimating lens group and a slow axis collimating lens group to output nearly parallel light of the light beam group, and then passes through a fast axis and slow axis conversion device to realize conversion between the fast axis direction and the slow axis direction, and then is incident on a transmission type grating under the action of a fourier transform lens, and according to a grating equation 2dsin θLittrowM λ, m being the diffraction order, typically-1 order, the wavelength of the different lasers being locked at λ1、λ2、….、λn1Also has the effect of improving the mode of the semiconductor laser, thetaLittrowThe blaze angle of the transmission type grating is n1 which is a positive integer, d is the grating period, the diffracted light of the transmission type grating is incident on the beam expanding device to realize the expansion of the light beam in the slow axis direction, as shown in fig. 2, a part of the light passes through the laser mode selecting device to enable the light beam to be reflected along the path to form part of the main laser mode feedback, and the light at the edge is not fed back to the edgeAnd the filter is used for selecting the laser mode again, so that the edge light at two sides of the light beam in the slow axis direction is filtered, only a plurality of main laser modes are allowed to penetrate, and the laser is incident on the output coupling mirror to realize integral resonance, phase locking and output of the laser. As shown in fig. 3, the selection and feedback of the main mode are realized by changing the position of the laser mode selection device in the slow axis direction, where 1201 denotes that the laser mode selection device is at the position of the comparative edge of the light spot, and the semiconductor laser beam combining device is not locked, and 1301 denotes that the laser mode selection device is at a relatively optimized position, and the semiconductor laser beam combining device is locked.
As can be seen from the above description, according to the semiconductor laser beam combining device provided by the present invention, the edge light is not fed back by the laser mode selecting device, only a part of the low-order main laser modes are fed back, and the mode selection is performed again by the filter, so that the edge light on both sides of the slow axis beam is filtered, only a part of the low-order laser modes are allowed to pass, and the filtered light is incident on the output coupling mirror to realize the integral resonance, phase locking and output of the laser.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A beam combining device for a semiconductor laser, the beam combining device comprising: the device comprises a semiconductor laser group, a fast axis collimating lens group, a slow axis collimating lens group, a fast axis and slow axis conversion device, a Fourier transform lens, a grating, a beam expanding device, a laser mode selection device, a filter and an output coupling lens;
the semiconductor laser group emits light beam groups in the same direction, and the light beam groups are emitted after passing through the fast axis collimating lens group, the slow axis collimating lens group, the fast axis and slow axis conversion device, the Fourier transform lens, the grating and the beam expanding device in sequence;
wherein the fast axis collimating mirror group is configured to reduce a fast axis direction divergence angle of the beam group, and the slow axis collimating mirror group is configured to reduce a slow axis direction divergence angle of the beam group; the fast axis and slow axis exchange device is used for exchanging the fast axis direction and the slow axis direction of the light beam group; the Fourier transform lens is used for Fourier transforming and focusing the light beam group; the grating is used for diffracting the focused light; the beam expanding device is used for performing beam expanding treatment on the diffracted light; the laser mode selection device is used for carrying out primary laser mode selection on the light beams after beam expansion processing so as to select part of low-order light modes to be reflected along a path; the filter is used for carrying out secondary laser mode selection on the light beam processed by the laser mode selection device, so that part of the light beam in the low-order mode is incident to the output coupling mirror through the filter to be output.
2. The beam combining device of claim 1 wherein the group of semiconductor lasers comprises at least two semiconductor lasers; the fast axis collimating lens group comprises at least two fast axis collimating lenses, and each fast axis collimating lens is arranged corresponding to each semiconductor laser; the slow axis collimating lens group comprises at least two slow axis collimating lenses, and each slow axis collimating lens is arranged corresponding to each fast axis collimating lens.
3. The beam combining device according to claim 1, wherein the semiconductor laser group is a single-tube semiconductor laser group, a linear semiconductor laser group, or a stacked semiconductor laser group.
4. The beam combining device of claim 1 wherein the beam expanding device is a telescopic beam expanding device.
5. The beam combining device of claim 1 wherein the laser mode selection device is a laser mode selection mirror.
6. The beam combining device of claim 1 wherein the filter is a spatial filter.
7. The beam combining device of claim 1, wherein each fast axis collimator lens of the set of fast axis collimator lenses is provided with an antireflection film.
8. The semiconductor laser beam combining device according to claim 1, wherein each slow axis collimator of the set of slow axis collimators is provided with an antireflection film.
9. The beam combining device of claim 1 wherein the grating is a transmissive diffraction grating.
10. The beam combining device of claim 1, wherein the grating is a reflective diffraction grating.
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| CN115995756A (en) * | 2023-03-23 | 2023-04-21 | 苏州长光华芯半导体激光创新研究院有限公司 | Wavelength locking system and wavelength locking method |
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| CN107946898A (en) * | 2017-11-22 | 2018-04-20 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser beam merging apparatus and conjunction Shu Fangfa |
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