CN108550704B - Si-P3HT hybrid solar cell and preparation method thereof - Google Patents
Si-P3HT hybrid solar cell and preparation method thereof Download PDFInfo
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- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 45
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000009792 diffusion process Methods 0.000 claims abstract description 44
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000000137 annealing Methods 0.000 claims description 77
- 239000010410 layer Substances 0.000 claims description 74
- 238000004528 spin coating Methods 0.000 claims description 41
- 239000002042 Silver nanowire Substances 0.000 claims description 22
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 22
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000002086 nanomaterial Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 10
- 229940117389 dichlorobenzene Drugs 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 6
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention relates to a Si-P3HT hybrid solar cell and a preparation method thereof, wherein the preparation method comprises the following steps: performing texturing treatment on the n-type silicon wafer; depositing a passivation layer on the lower surface of the n-type silicon wafer and forming a plurality of n-type heavily doped regions; forming a plurality of p-type diffusion regions on partial areas of the upper surface of the n-type silicon wafer; sequentially forming a first P3HT layer, a second P3HT layer, a first PEDOT PSS layer and a second PEDOT PSS layer on the upper surface of the n-type silicon wafer; preparing a front copper gate electrode on the upper surface of the n-type silicon wafer; and finally, preparing a back silver electrode on the lower surface of the n-type silicon wafer.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a Si-P3HT hybrid solar cell and a preparation method thereof.
Background
The existing crystalline silicon photovoltaic cell has high photoelectric conversion efficiency and is a photovoltaic cell used in large scale at present, but the existing crystalline silicon photovoltaic cell has a complex preparation process, so that the manufacturing cost of the photovoltaic cell is high. With the development of the photovoltaic cell industry, the organic solar cell is rapidly developed due to the advantages of low price of raw materials, low preparation temperature, simple preparation process and the like, but the photoelectric conversion efficiency of the organic solar cell is far lower than that of a crystalline silicon photovoltaic cell. Silicon-based organic-inorganic hybrid solar cells are more and more favored by people by combining the advantages of organic materials and inorganic silicon materials, and in the silicon-based organic-inorganic hybrid solar cells, the photoelectric conversion efficiency of the cells is influenced by the characteristics of the interfaces between the organic materials and the inorganic silicon materials and the types of the organic materials. How to improve the interfacial properties of such batteries is a problem to be solved in the industry.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a Si-P3HT hybrid solar cell and a preparation method thereof.
In order to achieve the purpose, the invention provides a preparation method of a Si-P3HT hybrid solar cell, which comprises the following steps:
1) performing texturing treatment on an n-type silicon wafer, and forming a texturing surface layer on the upper surface of the n-type silicon wafer;
2) depositing a passivation layer on the lower surface of the n-type silicon wafer, forming a plurality of through holes which are arranged in a matrix manner in the passivation layer by utilizing an etching process, and then forming a plurality of n-type heavily doped regions on a partial region of the lower surface of the n-type silicon wafer by selectively diffusing phosphorus, wherein each n-type heavily doped region is arranged corresponding to each through hole;
3) selectively diffusing boron on the upper surface of the n-type silicon wafer by using a mask so as to form a plurality of p-type diffusion regions on partial areas of the upper surface of the n-type silicon wafer, wherein the p-type diffusion regions are arranged in a matrix manner;
4) spin-coating a first chlorobenzene solution containing a molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 3, wherein the concentration of the P3HT in the first chlorobenzene solution is 1-2mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.03-0.08mg/ml, the spin-coating rotation speed is 4500-;
5) spin-coating a second dichlorobenzene solution containing the molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 4, wherein the concentration of the P3HT in the second dichlorobenzene solution is 2-3mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.1-0.2mg/ml, the rotation speed of the spin-coating is 3500-4000 r/min, and then performing second annealing treatment to form a second P3HT layer;
6) spin-coating a first PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 5, wherein the concentration of the silver nanowires in the first PEDOT (PSS) solution is 0.1-0.2mg/ml, the rotation speed of the spin-coating is 3000-4000 r/min, and then performing third annealing treatment to form a first PEDOT (PSS) layer;
7) spin-coating a second PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 6, wherein the concentration of the silver nanowires in the second PEDOT (PSS) solution is 0.3-0.5mg/ml, the spin-coating rotation speed is 2000-3000 r/min, and then performing fourth annealing treatment to form a second PEDOT (PSS) layer;
8) preparing a front copper gate electrode on the upper surface of the n-type silicon wafer obtained in the step 7;
9) and (4) preparing a back silver electrode on the lower surface of the n-type silicon wafer obtained in the step (8).
Preferably, in the step (2), the material of the passivation layer is one or more of silicon oxide, silicon nitride and aluminum oxide, the thickness of the passivation layer is 100 nm and 300 nm, the diameter of the through hole is 3-5 mm, and the distance between adjacent through holes is 2-4 mm.
Preferably, in the step (3), each p-type diffusion region is circular or square, when the p-type diffusion region is circular, the diameter of the p-type diffusion region is 3-4 mm, and the distance between adjacent p-type diffusion regions is 2-3 mm; when the p-type diffusion region is square, the side length of the p-type diffusion region is 3-4 mm, and the distance between adjacent p-type diffusion regions is 2-3 mm.
Preferably, in the step (4), the temperature of the first annealing treatment is 140-160 ℃, the annealing time of the first annealing treatment is 20-30 minutes, and the thickness of the first P3HT layer is 3-6 nm.
Preferably, in the step (5), the temperature of the second annealing treatment is 140-150 ℃, the annealing time of the second annealing treatment is 25-35 minutes, and the thickness of the second P3HT layer is 9-15 nm.
Preferably, in the step (6), the temperature of the third annealing treatment is 120-130 ℃, the annealing time of the third annealing treatment is 15-25 minutes, and the thickness of the first PEDOT/PSS layer is 30-40 nm.
Preferably, in the step (7), the temperature of the fourth annealing treatment is 110-120 ℃, the annealing time of the fourth annealing treatment is 20-40 minutes, and the thickness of the second PEDOT: PSS layer is 40-50 nm.
Preferably, in the step (8), the front-side copper grid electrode is formed by thermally evaporating metal copper, and the thickness of the front-side copper grid electrode is 100-200 nm; in the step (9), the back silver electrode is formed by thermally evaporating metal silver, and the thickness of the back silver electrode is 200-300 nm.
The invention also provides a Si-P3HT hybrid solar cell prepared by the method.
Compared with the prior art, the invention has the following advantages:
in the preparation process of the Si-P3HT hybrid solar cell, a plurality of P-type diffusion regions are formed on partial regions of the upper surface of an n-type silicon wafer, then a P3HT layer is formed by spin-coating a first chlorobenzene solution containing a molybdenum diselenide two-dimensional nano material and P3HT, so that in the Si-P3HT hybrid solar cell, a part of the n-type silicon wafer and the P-type diffusion regions form a PN junction, the rest part of the n-type silicon wafer and the P3HT layer form a Schottky junction, the P-type diffusion regions are uniformly dispersed on the n-type silicon wafer by optimizing the size of the P-type diffusion regions and the distance between the adjacent P-type diffusion regions, the advantages of the PN junction and the Schottky junction are effectively combined, the open-circuit voltage of the novel heterojunction photovoltaic cell is effectively improved, and the photoelectric conversion efficiency of the novel heterojunction photovoltaic cell is further improved.
The Si-P3HT hybrid solar cell comprises a first P3HT layer, a second P3HT layer, a first PEDOT (molybdenum disulfide) PSS layer and a second PEDOT (molybdenum disulfide) PSS layer which are superposed, and smooth separation and transmission of electron hole pairs can be ensured by optimizing the thickness of each layer, the content of molybdenum diselenide two-dimensional nano materials in the first P3HT layer and the second P3HT layer, and the content of silver nanowires in the first PEDOT (molybdenum disulfide) PSS layer and the second PEDOT (silver nanowire) layer, so that the filling factor and the short-circuit current of the novel heterojunction photovoltaic cell are improved.
Drawings
Fig. 1 is a schematic structural diagram of a Si-P3HT hybrid solar cell of the present invention.
Detailed Description
The invention provides a preparation method of a Si-P3HT hybrid solar cell, which comprises the following steps:
1) performing texturing treatment on an n-type silicon wafer, and forming a texturing surface layer on the upper surface of the n-type silicon wafer;
2) depositing a passivation layer on the lower surface of the n-type silicon wafer, forming a plurality of through holes which are arranged in a matrix manner in the passivation layer by utilizing an etching process, and then forming a plurality of n-type heavily doped regions on a partial region of the lower surface of the n-type silicon wafer by selectively diffusing phosphorus, wherein each n-type heavily doped region is arranged corresponding to each through hole;
3) selectively diffusing boron on the upper surface of the n-type silicon wafer by using a mask so as to form a plurality of p-type diffusion regions on partial areas of the upper surface of the n-type silicon wafer, wherein the p-type diffusion regions are arranged in a matrix manner;
4) spin-coating a first chlorobenzene solution containing a molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 3, wherein the concentration of the P3HT in the first chlorobenzene solution is 1-2mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.03-0.08mg/ml, the spin-coating rotation speed is 4500-;
5) spin-coating a second dichlorobenzene solution containing the molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 4, wherein the concentration of the P3HT in the second dichlorobenzene solution is 2-3mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.1-0.2mg/ml, the rotation speed of the spin-coating is 3500-4000 r/min, and then performing second annealing treatment to form a second P3HT layer;
6) spin-coating a first PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 5, wherein the concentration of the silver nanowires in the first PEDOT (PSS) solution is 0.1-0.2mg/ml, the rotation speed of the spin-coating is 3000-4000 r/min, and then performing third annealing treatment to form a first PEDOT (PSS) layer;
7) spin-coating a second PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 6, wherein the concentration of the silver nanowires in the second PEDOT (PSS) solution is 0.3-0.5mg/ml, the spin-coating rotation speed is 2000-3000 r/min, and then performing fourth annealing treatment to form a second PEDOT (PSS) layer;
8) preparing a front copper gate electrode on the upper surface of the n-type silicon wafer obtained in the step 7;
9) and (4) preparing a back silver electrode on the lower surface of the n-type silicon wafer obtained in the step (8).
In the step (2), the passivation layer is made of one or more of silicon oxide, silicon nitride and aluminum oxide, the thickness of the passivation layer is 100 nm and 300 nm, the diameter of the through hole is 3-5 mm, and the distance between adjacent through holes is 2-4 mm. In the step (3), each p-type diffusion region is circular or square, when the p-type diffusion region is circular, the diameter of the p-type diffusion region is 3-4 mm, and the distance between adjacent p-type diffusion regions is 2-3 mm; when the p-type diffusion region is square, the side length of the p-type diffusion region is 3-4 mm, and the distance between adjacent p-type diffusion regions is 2-3 mm. In the step (4), the temperature of the first annealing treatment is 140-160 ℃, the annealing time of the first annealing treatment is 20-30 minutes, and the thickness of the first P3HT layer is 3-6 nm.
Wherein, in the step (5), the temperature of the second annealing treatment is 140-150 ℃, the annealing time of the second annealing treatment is 25-35 minutes, and the thickness of the second P3HT layer is 9-15 nm. In the step (6), the temperature of the third annealing treatment is 120-130 ℃, the annealing time of the third annealing treatment is 15-25 minutes, and the thickness of the first PEDOT/PSS layer is 30-40 nanometers. In the step (7), the temperature of the fourth annealing treatment is 110-120 ℃, the annealing time of the fourth annealing treatment is 20-40 minutes, and the thickness of the second PEDOT/PSS layer is 40-50 nanometers. In the step (8), the front-surface copper grid electrode is formed by thermally evaporating metal copper, and the thickness of the front-surface copper grid electrode is 100-200 nm; in the step (9), the back silver electrode is formed by thermally evaporating metal silver, and the thickness of the back silver electrode is 200-300 nm.
As shown in fig. 1, the Si-P3HT hybrid solar cell prepared by the above method of the present invention comprises, from bottom to top, a back silver electrode 1, a passivation layer 2, an n-type heavily doped region 3, an n-type silicon wafer 4, a P-type diffusion region 5, a first P3HT layer 6, a first P3HT layer 7, a first PEDOT: PSS layer 8, a second PEDOT: PSS layer 9, and a front copper gate electrode 10, wherein the back silver electrode 1 is in contact with the n-type heavily doped region 3 through a through hole in the passivation layer 2.
Example 1:
the invention provides a preparation method of a Si-P3HT hybrid solar cell, which comprises the following steps:
1) performing texturing treatment on an n-type silicon wafer, and forming a texturing surface layer on the upper surface of the n-type silicon wafer;
2) depositing a passivation layer on the lower surface of the n-type silicon wafer, forming a plurality of through holes which are arranged in a matrix manner in the passivation layer by utilizing an etching process, and then forming a plurality of n-type heavily doped regions on a partial region of the lower surface of the n-type silicon wafer by selectively diffusing phosphorus, wherein each n-type heavily doped region is arranged corresponding to each through hole;
3) selectively diffusing boron on the upper surface of the n-type silicon wafer by using a mask so as to form a plurality of p-type diffusion regions on partial areas of the upper surface of the n-type silicon wafer, wherein the p-type diffusion regions are arranged in a matrix manner;
4) spin-coating a first chlorobenzene solution containing a molybdenum diselenide two-dimensional nanomaterial and P3HT on the upper surface of the n-type silicon wafer obtained in the step 3, wherein the concentration of the P3HT in the first chlorobenzene solution is 1.5mg/ml, the concentration of the molybdenum diselenide two-dimensional nanomaterial is 0.05mg/ml, the rotation speed of the spin-coating is 4800 r/min, and then performing first annealing treatment to form a first P3HT layer;
5) spin-coating a second dichlorobenzene solution containing the molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 4, wherein the concentration of the P3HT in the second dichlorobenzene solution is 2.5mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.15mg/ml, the rotation speed of the spin-coating is 3800 r/min, and then performing second annealing treatment to form a second P3HT layer;
6) spin-coating a first PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 5, wherein the concentration of the silver nanowires in the first PEDOT (PSS) solution is 0.15mg/ml, the rotation speed of the spin-coating is 3500 rpm, and then performing third annealing treatment to form a first PEDOT (PSS) layer;
7) spin-coating a second PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 6, wherein the concentration of the silver nanowires in the second PEDOT (PSS) solution is 0.4mg/ml, the spin-coating rotation speed is 2500 rpm, and then performing fourth annealing treatment to form a second PEDOT (PSS) layer;
8) preparing a front copper gate electrode on the upper surface of the n-type silicon wafer obtained in the step 7;
9) and (4) preparing a back silver electrode on the lower surface of the n-type silicon wafer obtained in the step (8).
In the step (2), the passivation layer is made of silicon oxide, the thickness of the passivation layer is 200 nanometers, the diameter of each through hole is 4 millimeters, and the distance between every two adjacent through holes is 3 millimeters. In the step (3), each p-type diffusion region is circular in shape, the diameter of the p-type diffusion region is 4 mm, and the distance between adjacent p-type diffusion regions is 3 mm. In the step (4), the temperature of the first annealing treatment is 150 ℃, the annealing time of the first annealing treatment is 25 minutes, and the thickness of the first P3HT layer is 4.5 nm. In the step (5), the temperature of the second annealing treatment is 145 ℃, the annealing time of the second annealing treatment is 30 minutes, and the thickness of the second P3HT layer is 12 nm. In the step (6), the temperature of the third annealing treatment is 125 ℃, the annealing time of the third annealing treatment is 20 minutes, and the thickness of the first PEDOT/PSS layer is 35 nanometers. In the step (7), the temperature of the fourth annealing treatment is 115 ℃, the annealing time of the fourth annealing treatment is 30 minutes, and the thickness of the second PEDOT/PSS layer is 45 nanometers. In the step (8), the front-side copper grid electrode is formed by thermally evaporating metal copper, and the thickness of the front-side copper grid electrode is 150 nanometers; in the step (9), the back silver electrode is formed by thermally evaporating metallic silver, and the thickness of the back silver electrode is 260 nm.
The Si-P3HT hybrid solar cell prepared by the method has the open-circuit voltage of 0.7V and the short-circuit current of 34.8mA/cm2The fill factor was 0.76, and the photoelectric conversion efficiency was 18.5%.
Example 2
The invention provides a preparation method of a Si-P3HT hybrid solar cell, which comprises the following steps:
1) performing texturing treatment on an n-type silicon wafer, and forming a texturing surface layer on the upper surface of the n-type silicon wafer;
2) depositing a passivation layer on the lower surface of the n-type silicon wafer, forming a plurality of through holes which are arranged in a matrix manner in the passivation layer by utilizing an etching process, and then forming a plurality of n-type heavily doped regions on a partial region of the lower surface of the n-type silicon wafer by selectively diffusing phosphorus, wherein each n-type heavily doped region is arranged corresponding to each through hole;
3) selectively diffusing boron on the upper surface of the n-type silicon wafer by using a mask so as to form a plurality of p-type diffusion regions on partial areas of the upper surface of the n-type silicon wafer, wherein the p-type diffusion regions are arranged in a matrix manner;
4) spin-coating a first chlorobenzene solution containing a molybdenum diselenide two-dimensional nanomaterial and P3HT on the upper surface of the n-type silicon wafer obtained in the step 3, wherein the concentration of the P3HT in the first chlorobenzene solution is 1mg/ml, the concentration of the molybdenum diselenide two-dimensional nanomaterial is 0.07mg/ml, the rotation speed of the spin-coating is 4500 rpm, and then performing first annealing treatment to form a first P3HT layer;
5) spin-coating a second dichlorobenzene solution containing the molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 4, wherein the concentration of the P3HT in the second dichlorobenzene solution is 2mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.18mg/ml, the rotation speed of the spin-coating is 4000 revolutions per minute, and then performing second annealing treatment to form a second P3HT layer;
6) spin-coating a first PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 5, wherein the concentration of the silver nanowires in the first PEDOT (PSS) solution is 0.2mg/ml, the rotation speed of the spin-coating is 4000 revolutions per minute, and then performing third annealing treatment to form a first PEDOT (PSS) layer;
7) spin-coating a second PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 6, wherein the concentration of the silver nanowires in the first PEDOT (PSS) solution is 0.5mg/ml, the spin-coating speed is 2000 rpm, and then performing fourth annealing treatment to form a second PEDOT (PSS) layer;
8) preparing a front copper gate electrode on the upper surface of the n-type silicon wafer obtained in the step 7;
9) and (4) preparing a back silver electrode on the lower surface of the n-type silicon wafer obtained in the step (8).
In the step (2), the passivation layer is made of aluminum oxide, the thickness of the passivation layer is 100 nanometers, the diameter of each through hole is 5 millimeters, and the distance between every two adjacent through holes is 4 millimeters. In the step (3), each p-type diffusion region is square, the side length of the p-type diffusion region is 3 mm, and the distance between adjacent p-type diffusion regions is 2 mm. In the step (4), the temperature of the first annealing treatment is 140 ℃, the annealing time of the first annealing treatment is 30 minutes, and the thickness of the first P3HT layer is 6 nm. In the step (5), the temperature of the second annealing treatment is 140 ℃, the annealing time of the second annealing treatment is 25 minutes, and the thickness of the second P3HT layer is 9 nm. In the step (6), the temperature of the third annealing treatment is 120 ℃, the annealing time of the third annealing treatment is 25 minutes, and the thickness of the first PEDOT/PSS layer is 30 nanometers. In the step (7), the temperature of the fourth annealing treatment is 110 ℃, the annealing time of the fourth annealing treatment is 20 minutes, and the thickness of the second PEDOT/PSS layer is 50 nanometers. In the step (8), the front-side copper grid electrode is formed by thermally evaporating metal copper, and the thickness of the front-side copper grid electrode is 200 nanometers; in the step (9), the back silver electrode is formed by thermally evaporating metallic silver, and the thickness of the back silver electrode is 300 nm.
The Si-P3HT hybrid solar cell prepared by the method has the open-circuit voltage of 0.69V and the short-circuit current of 34.5mA/cm2The fill factor was 0.75, and the photoelectric conversion efficiency was 17.9%.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A preparation method of a Si-P3HT hybrid solar cell is characterized by comprising the following steps: the method comprises the following steps:
1) performing texturing treatment on an n-type silicon wafer, and forming a texturing surface layer on the upper surface of the n-type silicon wafer;
2) depositing a passivation layer on the lower surface of the n-type silicon wafer, forming a plurality of through holes which are arranged in a matrix manner in the passivation layer by utilizing an etching process, and then forming a plurality of n-type heavily doped regions on a partial region of the lower surface of the n-type silicon wafer by selectively diffusing phosphorus, wherein each n-type heavily doped region is arranged corresponding to each through hole;
3) selectively diffusing boron on the upper surface of the n-type silicon wafer by using a mask so as to form a plurality of p-type diffusion regions on partial areas of the upper surface of the n-type silicon wafer, wherein the p-type diffusion regions are arranged in a matrix manner;
4) spin-coating a first chlorobenzene solution containing a molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 3, wherein the concentration of the P3HT in the first chlorobenzene solution is 1-2mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.03-0.08mg/ml, the spin-coating rotation speed is 4500-;
5) spin-coating a second dichlorobenzene solution containing the molybdenum diselenide two-dimensional nano material and P3HT on the upper surface of the n-type silicon wafer obtained in the step 4, wherein the concentration of the P3HT in the second dichlorobenzene solution is 2-3mg/ml, the concentration of the molybdenum diselenide two-dimensional nano material is 0.1-0.2mg/ml, the rotation speed of the spin-coating is 3500-4000 r/min, and then performing second annealing treatment to form a second P3HT layer;
6) spin-coating a first PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 5, wherein the concentration of the silver nanowires in the first PEDOT (PSS) solution is 0.1-0.2mg/ml, the rotation speed of the spin-coating is 3000-4000 r/min, and then performing third annealing treatment to form a first PEDOT (PSS) layer;
7) spin-coating a second PEDOT (PSS) solution containing silver nanowires on the upper surface of the n-type silicon wafer obtained in the step 6, wherein the concentration of the silver nanowires in the second PEDOT (PSS) solution is 0.3-0.5mg/ml, the spin-coating rotation speed is 2000-3000 r/min, and then performing fourth annealing treatment to form a second PEDOT (PSS) layer;
8) preparing a front copper gate electrode on the upper surface of the n-type silicon wafer obtained in the step 7;
9) and (4) preparing a back silver electrode on the lower surface of the n-type silicon wafer obtained in the step (8).
2. The method of claim 1 for the preparation of a Si-P3HT hybrid solar cell, wherein: in the step (2), the passivation layer is made of one or more of silicon oxide, silicon nitride and aluminum oxide, the thickness of the passivation layer is 100-300 nm, the diameter of the through hole is 3-5 mm, and the distance between adjacent through holes is 2-4 mm.
3. The method of claim 1 for the preparation of a Si-P3HT hybrid solar cell, wherein: in the step (3), each p-type diffusion region is circular or square, when the p-type diffusion region is circular, the diameter of the p-type diffusion region is 3-4 mm, and the distance between adjacent p-type diffusion regions is 2-3 mm; when the p-type diffusion region is square, the side length of the p-type diffusion region is 3-4 mm, and the distance between adjacent p-type diffusion regions is 2-3 mm.
4. The method of claim 1 for the preparation of a Si-P3HT hybrid solar cell, wherein: in the step (4), the temperature of the first annealing treatment is 140-160 ℃, the annealing time of the first annealing treatment is 20-30 minutes, and the thickness of the first P3HT layer is 3-6 nm.
5. The method of claim 1, wherein: in the step (5), the temperature of the second annealing treatment is 140-150 ℃, the annealing time of the second annealing treatment is 25-35 minutes, and the thickness of the second P3HT layer is 9-15 nm.
6. The method of claim 1 for the preparation of a Si-P3HT hybrid solar cell, wherein: in the step (6), the temperature of the third annealing treatment is 120-130 ℃, the annealing time of the third annealing treatment is 15-25 minutes, and the thickness of the first PEDOT/PSS layer is 30-40 nanometers.
7. The method of claim 1 for the preparation of a Si-P3HT hybrid solar cell, wherein: in the step (7), the temperature of the fourth annealing treatment is 110-120 ℃, the annealing time of the fourth annealing treatment is 20-40 minutes, and the thickness of the second PEDOT/PSS layer is 40-50 nanometers.
8. The method of claim 1 for the preparation of a Si-P3HT hybrid solar cell, wherein: in the step (8), the front-surface copper grid electrode is formed by thermally evaporating metal copper, and the thickness of the front-surface copper grid electrode is 100-200 nm; in the step (9), the back silver electrode is formed by thermally evaporating metal silver, and the thickness of the back silver electrode is 200-300 nm.
9. A Si-P3HT hybrid solar cell, characterized in that it is formed by a method according to any one of claims 1 to 8.
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