CN108538929A - 一种用于太阳能电池的复合膜及其制备方法和应用 - Google Patents
一种用于太阳能电池的复合膜及其制备方法和应用 Download PDFInfo
- Publication number
- CN108538929A CN108538929A CN201810149577.7A CN201810149577A CN108538929A CN 108538929 A CN108538929 A CN 108538929A CN 201810149577 A CN201810149577 A CN 201810149577A CN 108538929 A CN108538929 A CN 108538929A
- Authority
- CN
- China
- Prior art keywords
- sputtering
- solar cell
- films
- azo
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 33
- 239000012528 membrane Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 33
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 13
- 239000004816 latex Substances 0.000 claims abstract description 6
- 229920000126 latex Polymers 0.000 claims abstract description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 3
- 229920005591 polysilicon Polymers 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 81
- 238000004544 sputter deposition Methods 0.000 claims description 67
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 238000004458 analytical method Methods 0.000 claims description 7
- 239000005357 flat glass Substances 0.000 claims description 7
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 230000001476 alcoholic effect Effects 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 51
- 230000008569 process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000004590 computer program Methods 0.000 description 7
- 230000009466 transformation Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种用于太阳能电池的复合膜,该复合膜的结构为X/Ag/AZO,其中X为SiO2、TiO2或VO2其中一种或多种。本发明提供的技术方案,利用磁控溅射法制备AZO层和Ag层,利用磁控溅射法和乳胶凝胶法分别制备SiO2和TiO2薄膜。本发明得到的复合膜具有高可见光透射高红外反射的优点,适用于单晶硅、多晶硅、非晶硅、钙钛矿、铜铟镓硒或染料敏化太阳能电池中。
Description
技术领域:
本发明涉及一种复合膜,具体涉及一种用于太阳能电池的高可见光透射高红外反射的复合膜及其制备方法和应用。
背景技术:
太阳能是一种可直接开发利用、无污染的清洁能源。太阳每年向地球辐射的能量大约为3×1024J,该值约目前全球能耗的6000倍。所以太阳能潜力巨大的清洁能源。据美国能源部对消耗的初级能源估算,超过55%的能源最终以废热的形式被释放到环境中。所以有效地利用太阳能和热能与人们不断提高物质生活水平的目的息息相关。
太阳光照射在太阳能电池表面,一部分被反射回大气层,另一部分进入太阳能电池内部而被吸收。因此,太阳光辐射分为被反射出去的能量和被太阳电池吸收转化成电能两部分。然而,目前太阳能电池的反射利用率较低无法同时满足光电电池和热电电池的需要。
发明内容:
本发明针对现有技术存在的问题,提供一种转换率高的光电热电复合型太阳能电池,提高太阳光辐射的利用率,为此在光电电池的窗口层上制备一层SiO2/Ag/AZO复合膜层。此复合膜层将可见光波段透射到光电电池,而将红外光波段反射到热电电池上,热电电池上产生大量热量而进行温差放电,大幅提高太阳能电池的转化效率。
为了达到上述目的,本发明提供了采用下述技术方案:
本发明提供了一种用于太阳能电池用复合膜,所述复合膜的结构为X/Ag/AZO,其中X为从SiO2、TiO2或VO2其中选出的一种或多种氧化物。
优选的,所述X/Ag/AZO复合膜中X薄膜厚度为100~120nm,Ag薄膜厚度为8~12nm,AZO薄膜厚度为400~800nm。
优选的,所述太阳能电池宽带隙钙钛矿太阳能电池I和窄带隙钙钛矿太阳能电池II,两者间有平板玻璃6叠层。
优选的,所述宽带隙钙钛矿太阳能电池I自上而下的平板玻璃6方向上依次设有窗口层2、过渡层3、宽带隙钙钛矿吸收层4和透明导电层5。5、一种如权利要求3的用于太阳能电池用复合膜,其特征在于,所述窄带隙钙钛矿太阳能电池II自上而下的平板玻璃6的方向上依次设有透明导电层7、窄禁带钙钛矿吸收层8、过渡层9、N型层10和底电极层11。
优选的,所述窗口层2为掺铝氧化锌或掺氟氧化锡制得;过渡层3为二氧化钛制得;所述宽带隙钙钛矿吸收层4为CH3NH3PbX3制得,其中,X为Cl、Br或I。
优选的,所述透明导电层7为掺铝氧化锌或掺氟氧化锡制得;窄带隙钙钛矿吸收层8的材料为CH3NH3PbX3制得,其中,X为Cl、Br或I;过渡层9的材料为二氧化钛;N型层10为二氧化钛致密层;底电极层11为Ag制得。
一种用于太阳能电池的复合膜的制备方法,所述方法包括以下步骤:
(1)用磁控溅射法制备AZO薄膜;
(2)于AZO薄膜上用磁控溅射法制备Ag薄膜;
(3)于Ag薄膜上用磁控溅射法制备SiO2薄膜或用乳胶凝胶法制备的TiO2薄膜所述复合膜。
优选的,步骤(1)中,所述磁控溅射法制备AZO薄膜包括如下步骤:
制作衬底:依次用分析纯丙酮、分析纯酒精和去离子水超声波清洗作为衬底的载玻片后,用氮吹干;
在所述衬底上生长AZO薄膜:于氩气氛中,磁控溅射反应室内,用射频磁控溅射方法生长AZO薄膜,溅射时所述衬底温度为180~230℃,溅射功率密度为5W/cm2,溅射压强为0.3~1.0Pa,,溅射时间为10~20min。
优选的,步骤(2)中,所述磁控溅射法制备Ag薄膜包括如下步骤:
在制得的AZO膜上生长Ag膜,溅射时所述AZO膜温度为室温,溅射功率密度为5W/cm2,溅射压强为0.3~1.0Pa,溅射保护气为氩气,溅射时间为15~20s。
优选的,步骤(3)中,所述磁控溅射法制备SiO2膜包括如下步骤:
在制得的AZO膜上生长Ag膜,溅射时所述AZO膜的温度为室温,溅射功率密度为2W/cm2,溅射压强为0.6~1.0Pa,溅射保护气为氩气,溅射时间为5~10min。
优选的,步骤(3)中,所述乳胶凝胶法制备TiO2膜包括如下步骤:
将四氯化钛加入至无水乙醇得四氯化钛醇溶液,于室温下陈化8h后加入聚乙二醇得TiO2溶胶;然后利用浸渍拉法将所制得的溶胶涂覆在制备的Ag膜上,干燥后形成TiO2薄膜。
优选的,所述复合膜用于单晶硅、多晶硅、非晶硅、钙钛矿、铜铟镓硒或染料敏化太阳
与最接近的现有技术比,本发明提供的技术方案具有如下有益效果:
(1)本发明提供的SiO2/Ag/AZO复合膜层,具有高可见光透射和高红外反射的优点。
(2)本发明提供的技术方案中,利用物理磁控溅射法,工艺条件易于控制且制备的薄膜均一性、分散性良好。
附图说明:
图1是本发明复合膜用于光电热电复合型太阳能电池的示意图。
图2是本发明光电热电复合型太阳能电池的示意图。
其中,1,减反层;2,窗口层;3,过渡层;4,宽带隙钙钛矿吸收层;5,透明导电层;6,平板玻璃;7,透明导电层;8,窄带隙钙钛矿吸收层;9,过渡层;10,N型层;11,底电极层;12,叉指电极;I,第一结钙钛矿太阳电池;II,第二结钙钛矿太阳电池。
具体实施方式:
下面将结合本发明实施例和附图1,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图1所示,在光电电池的窗口层上制备一层X/Ag/AZO复合膜,其中X为SiO2、TiO2或VO2其中一种或多种。此复合膜层将可见光波段透射到光电电池,而将红外光波段反射到热电电池上,热电电池产生大量热量而进行温差放电,这样可以大幅提高太阳能电池的转化效率。
实施例1:
选用铜铟镓硒太阳能电池作为光电电池:
(1)磁控溅射法制备AZO薄膜的过程如下:
以载玻片作为衬底,分别依次用分析纯丙酮,分析纯酒精和去离子水进行超声波清洗,用纯氮吹干后将衬底放入磁控溅射反应室,用射频磁控溅射方法在衬底上生长AZO薄膜,溅射时基片温度为180℃,溅射功率密度为5W/cm2,溅射压强为0.8Pa,溅射保护气为氩气,溅射时间为20min。所得AZO薄膜的厚度为800nm。
(2)磁控溅射法制备Ag薄膜的过程如下:
在制备的AZO薄膜上生长Ag薄膜,溅射时基片温度为室温,溅射功率密度为5W/cm2,溅射压强为0.7Pa,溅射保护气为氩气,溅射时间为15~20s。所得Ag薄膜的厚度为10nm。
(3)磁控溅射法制备SiO2薄膜的过程如下:
在制备的AZO薄膜上生长Ag薄膜,溅射时基片温度为室温,溅射功率密度为2W/cm2,溅射压强为0.9Pa,溅射保护气为氩气,溅射时间为8min。所得SiO2薄膜的厚度为120nm。
(4)将所得复合膜组装制得光电电池后,将光电电池安装在于水平成45°角的支架上,热电电池与光电电池平行以便接收其反射的红外光线。
在标准光照强度下,本实施例提供的太阳能电池的转化效率11%。
实施例2:
选用钙钛矿太阳能电池作为光电电池:
(1)磁控溅射法制备AZO薄膜的过程如下:
以载玻片作为衬底,分别依次用分析纯丙酮,分析纯酒精和去离子水进行超声波清洗,用纯氮吹干后将衬底放入磁控溅射反应室,用射频磁控溅射方法在衬底上生长AZO薄膜,溅射时基片温度为200℃,溅射功率密度为5W/cm2,溅射压强为0.9Pa,溅射保护气为氩气,溅射时间为15min。所得AZO薄膜的厚度为400nm。
(2)磁控溅射法制备Ag薄膜的过程如下:
在制备的AZO薄膜上生长Ag薄膜,溅射时基片温度为室温,溅射功率密度为5W/cm2,溅射压强为0.7Pa,溅射保护气为氩气,溅射时间为18s。所得Ag薄膜的厚度为12nm。
(3)磁控溅射法制备SiO2薄膜的过程如下:
在制备的AZO薄膜上生长Ag薄膜,溅射时基片温度为室温,溅射功率密度为2W/cm2,溅射压强为0.8Pa,溅射保护气为氩气,溅射时间为10min。所得SiO2薄膜的厚度为110nm。
(4)将所得复合膜组装制得光电电池后,将光电电池安装在于水平成45°角的支架上,热电电池与光电电池平行以便接收其反射的红外光线。
标准光照强度下,本实施例提供的太阳能电池的转化效率可达10%。
实施例3:
选用铜铟镓硒太阳能电池作为光电电池:
(1)磁控溅射法制备AZO薄膜的过程如下:
以载玻片作为衬底,分别依次用分析纯丙酮,分析纯酒精和去离子水进行超声波清洗,用纯氮吹干后将衬底放入磁控溅射反应室,用射频磁控溅射方法在衬底上生长AZO薄膜,溅射时基片温度为230℃,溅射功率密度为5W/cm2,溅射压强为0.3Pa,溅射保护气为氩气,溅射时间为10min。所得AZO薄膜的厚度为600nm。
(2)磁控溅射法制备Ag薄膜的过程如下:
在制备的AZO薄膜上生长Ag薄膜,溅射时基片温度为室温,溅射功率密度为5W/cm2,溅射压强为0.9Pa,溅射保护气为氩气,溅射时间为18s。所得Ag薄膜的厚度为8nm。
(3)乳胶凝胶法制备TiO2薄膜的过程如下:
将四氯化钛加入至无水乙醇得四氯化钛醇溶液,后于室温下陈化8h后加入聚乙二醇得TiO2溶胶;然后利用浸渍提拉法将所制得的溶胶涂覆在制备的Ag薄膜上,经干燥后形成TiO2薄膜。所得SiO2薄膜的厚度为100nm。
(4)将所得复合膜组装制得光电电池后,将光电电池安装在于水平成45°角的支架上,热电电池与光电电池平行以便接收其反射的红外光线。
在标准光照强度下,本实施例的太阳能电池的转化效率为12%。
本领域内的技术人员应明白,本申请的实施例可提供为方法、系统、或计算机程序产品。因此,本申请可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。而且,本申请可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。
本申请是参照根据本申请实施例的方法、设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的处理器以产生一个机器,使得通过计算机或其他可编程数据处理设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中,使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品,该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上,使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理,从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
以上仅为本发明的实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均包含在申请待批的本发明的权利要求范围之内。
Claims (12)
1.一种用于太阳能电池的复合膜,其特征在于,所述太阳能电池包括宽带隙钙钛矿太阳能电池I和窄带隙钙钛矿太阳能电池II,两者间有平板玻璃(6)叠层;所述复合膜设置于太阳能电池外表面,其结构为X/Ag/AZO,其中X为从SiO2、TiO2或VO2其中选出的一种或多种。
2.如权利要求1所述的一种用于太阳能电池的复合膜,其特征在于,所述X/Ag/AZO复合膜中X薄膜厚度为100~120nm;和/或,Ag薄膜厚度为8~12nm;和/或,AZO薄膜厚度为400~800nm。
3.一种如权利要求1的用于太阳能电池复合膜,其特征在于,所述宽带隙钙钛矿太阳能电池I自上而下的平板玻璃(6)方向上依次设有窗口层(2)、过渡层(3)、宽带隙钙钛矿吸收层(4)和透明导电层(5)。
4.一种如权利要求1的用于太阳能电池复合膜,其特征在于,所述窄带隙钙钛矿太阳能电池II自上而下的平板玻璃(6)的方向上依次设有透明导电层(7)、窄禁带钙钛矿吸收层(8)、过渡层(9)、N型层(10)和底电极层(11)。
5.根据权利要求2所述的用于太阳能电池复合膜,其特征在于,所述窗口层(2)为掺铝氧化锌或掺氟氧化锡制得;过渡层(3)为二氧化钛制得;所述宽带隙钙钛矿吸收层(4)为CH3NH3PbX3制得,其中,X为Cl、Br或I。
6.根据权利要求1所述的太阳能电池复合膜,其特征在于,所述透明导电层(7)为掺铝氧化锌或掺氟氧化锡制得;窄带隙钙钛矿吸收层(8)的材料为CH3NH3PbX3制得,其中,X为Cl、Br或I;过渡层(9)的材料为二氧化钛;N型层(10)为二氧化钛致密层;底电极层(11)为Ag制得。
7.一种如权利要求1所述的用于太阳能电池的复合膜的制备方法,其特征在于,所述方法包括以下步骤:
(1)用磁控溅射法制备AZO薄膜;
(2)于AZO薄膜上用磁控溅射法制备Ag薄膜;
(3)于Ag薄膜上用磁控溅射法制备SiO2薄膜或用乳胶凝胶法制备的TiO2薄膜,获得所述复合膜。
8.如权利要求1所述的一种用于太阳能电池的复合膜的制备方法,其特征在于,步骤(1)中,所述磁控溅射法制备AZO薄膜包括如下步骤:
制作衬底:依次用分析纯丙酮、分析纯酒精和去离子水超声波清洗作为衬底的载玻片后,用氮吹干;
在所述衬底上生长AZO薄膜:于氩气氛中,磁控溅射反应室内,用射频磁控溅射方法生长AZO薄膜,溅射时所述衬底温度为180~230℃,溅射功率密度为5W/cm2,溅射压强为0.3~1.0Pa,,溅射时间为10~20min。
9.如权利要求1所述的一种用于太阳能电池的复合膜的制备方法,其特征在于,步骤(2)中,所述磁控溅射法制备Ag薄膜包括如下步骤:
在制得的AZO膜上生长Ag膜,溅射时所述AZO膜温度为室温,溅射功率密度为5W/cm2,溅射压强为0.3~1.0Pa,溅射保护气为氩气,溅射时间为15~20s。
10.如权利要求1所述的一种用于太阳能电池的复合膜的制备方法,其特征在于,步骤(3)中,所述磁控溅射法制备SiO2膜包括如下步骤:
在制得的AZO膜上生长Ag膜,溅射时所述AZO膜的温度为室温,溅射功率密度为2W/cm2,溅射压强为0.6~1.0Pa,溅射保护气为氩气,溅射时间为5~10min。
11.如权利要求1所述的一种用于太阳能电池的复合膜的制备方法,其特征在于,步骤(3)中,所述乳胶凝胶法制备TiO2膜包括如下步骤:
将四氯化钛加入至无水乙醇得四氯化钛醇溶液,于室温下陈化8h后加入聚乙二醇得TiO2溶胶;然后利用浸渍拉法将所制得的溶胶涂覆在制备的Ag膜上,干燥后形成TiO2薄膜。
12.如如权利要求1所述的一种用于太阳能电池的复合膜的应用,其特征在于,所述复合膜用于单晶硅、多晶硅、非晶硅、钙钛矿、铜铟镓硒或染料敏化太阳能电池中。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810149577.7A CN108538929A (zh) | 2018-02-13 | 2018-02-13 | 一种用于太阳能电池的复合膜及其制备方法和应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810149577.7A CN108538929A (zh) | 2018-02-13 | 2018-02-13 | 一种用于太阳能电池的复合膜及其制备方法和应用 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108538929A true CN108538929A (zh) | 2018-09-14 |
Family
ID=63486063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810149577.7A Pending CN108538929A (zh) | 2018-02-13 | 2018-02-13 | 一种用于太阳能电池的复合膜及其制备方法和应用 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108538929A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113113497A (zh) * | 2021-04-13 | 2021-07-13 | 河南大学 | 一种使用有机增效剂的太阳能电池及其制备方法 |
CN114622162A (zh) * | 2022-03-14 | 2022-06-14 | 南京邮电大学 | 一种耐高温透明导电复合薄膜及其制备方法和应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080107799A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
US20090194155A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
CN105609640A (zh) * | 2015-09-28 | 2016-05-25 | 湘潭大学 | 一种机械叠层钙钛矿太阳能电池及其制备方法 |
-
2018
- 2018-02-13 CN CN201810149577.7A patent/CN108538929A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080107799A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
US20090194155A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
CN105609640A (zh) * | 2015-09-28 | 2016-05-25 | 湘潭大学 | 一种机械叠层钙钛矿太阳能电池及其制备方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113113497A (zh) * | 2021-04-13 | 2021-07-13 | 河南大学 | 一种使用有机增效剂的太阳能电池及其制备方法 |
CN113113497B (zh) * | 2021-04-13 | 2023-01-24 | 河南大学 | 一种使用有机增效剂的太阳能电池及其制备方法 |
CN114622162A (zh) * | 2022-03-14 | 2022-06-14 | 南京邮电大学 | 一种耐高温透明导电复合薄膜及其制备方法和应用 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20090194165A1 (en) | Ultra-high current density cadmium telluride photovoltaic modules | |
CN102753886B (zh) | 聚光装置、其制造方法和太阳能电池系统 | |
CN102214661B (zh) | 一种宽光谱吸收的薄膜太阳能电池 | |
JP2006310711A (ja) | 太陽電池用の光学薄膜およびその製造方法 | |
CN102424533A (zh) | 减反射可见光与反射近红外线双功能镀膜玻璃及其制备方法 | |
CN102332499B (zh) | 一种利用微颗粒制备双结构绒面透明电极的方法 | |
CN101882652A (zh) | 基于激光刻蚀晶化光学薄膜层的非晶硅薄膜太阳能电池的制备工艺 | |
CN107342331B (zh) | 一种t型顶电极背反射薄膜太阳电池的生产工艺 | |
CN108538929A (zh) | 一种用于太阳能电池的复合膜及其制备方法和应用 | |
Guo et al. | Optimization of broadband omnidirectional antireflection coatings for solar cells | |
CN108183141A (zh) | 一种新型结构的碲化镉薄膜电池及其制备方法 | |
CN102034888A (zh) | 一种薄膜太阳能电池及其制备方法 | |
Moradi et al. | Efficiency enhancement of Si solar cells by using nanostructured single and double layer anti-reflective coatings | |
CN101567396A (zh) | 用于太阳能电池的透明导电基板 | |
CN102881727B (zh) | 一种具有高导电性的减反射膜及其制备方法 | |
CN101704635B (zh) | 一种在光学太阳反射镜上制备掺铝氧化锌薄膜的方法 | |
Fan et al. | Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact | |
CN104485367A (zh) | 改善hit太阳能电池性能的微纳结构及制备方法 | |
CN113540291B (zh) | 两端钙钛矿叠层电池的制作方法以及两端钙钛矿叠层电池 | |
CN213184346U (zh) | 一种透明太阳能电池 | |
CN101246930A (zh) | 薄膜太阳能电池的超白反射层 | |
CN204741023U (zh) | 一种新型柔性太阳能电池板 | |
CN102290450A (zh) | 一种n型晶体硅太阳能电池 | |
CN103107244B (zh) | 一种氧化镉基透光波段可调的导电薄膜制备方法 | |
CN101997039A (zh) | 一种太阳能电池用减反射材料及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180914 |
|
RJ01 | Rejection of invention patent application after publication |