CN108538722A - Discharge pipe production method - Google Patents
Discharge pipe production method Download PDFInfo
- Publication number
- CN108538722A CN108538722A CN201810291540.8A CN201810291540A CN108538722A CN 108538722 A CN108538722 A CN 108538722A CN 201810291540 A CN201810291540 A CN 201810291540A CN 108538722 A CN108538722 A CN 108538722A
- Authority
- CN
- China
- Prior art keywords
- ground level
- discharge pipe
- production method
- pipe production
- electric discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000010330 laser marking Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000001962 electrophoresis Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005457 optimization Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Abstract
The invention discloses a kind of electric discharge pipe production methods, include the following steps successively：Laser marking step, preceding ground level diffusing step, extension ground level diffusing step, ground level diffusing step, emitting stage diffusing step, passivation layer deposition step and metal step.The present invention can substantially improve yield by process optimization and reducing cost makes product improve the market competitiveness.
Description
Technical field
The present invention relates to a kind of electric discharge pipe production methods.
Background technology
Existing discharge tube is a kind of high voltage protective element being used in equipment input terminal, if the voltage at its both ends exceeds its guarantor
When protecting specification value, inside will appear short circuit phenomenon, and sponge the mistake high pressure of input.Existing discharge tube in process of production by
In base area, complex process causes of high cost and since the complicated of technique causes yield fluctuation big, hands over phase and production capacity to cause very product
It is big to influence.
Invention content
In view of this, the purpose of the present invention is to provide a kind of electric discharge pipe production method, it can be significantly by process optimization
Improve yield and reducing cost makes product improve the market competitiveness.
Purpose according to the present invention proposes a kind of electric discharge pipe production method, includes the following steps successively：Laser marking walks
Suddenly, preceding ground level diffusing step, extension ground level diffusing step, ground level diffusing step, emitting stage diffusing step, passivation layer deposition step
Suddenly with metal step.
Based on the above technical solution, it further includes the following affiliated technical solutions：
A concentration of 42-57ohm/sq of ground level in the ground level diffusing step.
Emitting stage area in the emitting stage diffusing step is 1633K square micron -1814K square microns.
It is -220 minutes 180 minutes that emitter in the emitting stage diffusing step, which promotes the time,.
In the laser marking step fixed figure pit is formed in silicon face using the high temperature of laser.
Ground level before P+ type is formed in P-type semiconductor silicon body by high-temperature diffusion process in the preceding ground level diffusing step.
High temperature range needs thermocouple measurement to monitor between 1100 DEG C to 1275 DEG C.
Form N+ types extension base in the extension ground level diffusing step in P-type semiconductor silicon body by high-temperature diffusion process
Grade.
Form N+ type ground levels in the ground level diffusing step step in P-type semiconductor silicon body by high-temperature diffusion process.
Form P+ type emitting stage in the emitting stage diffusing step in N-type semiconductor silicon body by high-temperature diffusion process.
The glass powder with cathode is set to be deposited under the attraction of positive electric field by electrophoresis in the passivation layer deposition step
Passivation layer is formed in silicon chip surface and protects PN junction, and is formed phosphorous nickel metal and silicon by chemical reaction method in metal step
Silicon nickel alloy is used as the welding foot subsequently encapsulated extraction and is used.
The method have the advantages that：
The present invention can substantially improve yield by process optimization and reducing cost makes product improve the market competitiveness.
Description of the drawings
The invention will be further described with reference to the accompanying drawings and embodiments：
Fig. 1 is the flow chart of the present invention.
Fig. 2 is the structure chart of discharge tube in the present invention.
Specific implementation mode
Embodiment：As shown in Figure 1, the present invention provides a kind of specific embodiment of electric discharge pipe production method, wrap successively
Include following steps：Laser marking step, preceding ground level diffusing step, extension ground level diffusing step, ground level diffusing step, emitting stage expand
It takes a walk rapid, passivation layer deposition step, metal step.
The operation principle of laser marking step：Using the high temperature of laser silicon face formed fixed figure pit using as
Product identification and alignment identify.Using equipment：Laser printer, raw material：Silicon, laser generator.
The operation principle of preceding ground level diffusing step：Before P+ type being formed by high-temperature diffusion process in P-type semiconductor silicon body
Ground level.Using equipment：High temperature dispersing furnace, raw material：Silicon, Boron tribromide, nitrogen, oxygen.
Extend the operation principle of ground level diffusing step：N+ types are formed in P-type semiconductor silicon body by high-temperature diffusion process
Extend ground level.Using equipment：High temperature dispersing furnace, raw material：Silicon, Boron tribromide, nitrogen, oxygen.
The operation principle of ground level diffusing step：N+ type ground levels are formed in P-type semiconductor silicon body by high-temperature diffusion process.
Using equipment：High temperature dispersing furnace, raw material：Silicon, Boron tribromide, nitrogen, oxygen.The concentration range of ground level is in ground level diffusing step
42-57ohm/sq。
The operation principle of emitting stage diffusing step：P+ type hair is formed in N-type semiconductor silicon body by high-temperature diffusion process
Penetrate grade.Using equipment：High temperature dispersing furnace, raw material：Silicon, Boron tribromide, nitrogen, oxygen.Emitting stage in emitting stage diffusing step
Area is:1633K square micron -1814K square microns.It is 180 points that emitter in emitting stage diffusing step, which promotes the time,
Clock -220 minutes.
The operation principle of passivation layer deposition step：Make the glass powder with cathode under the attraction of positive electric field by electrophoresis
It is deposited on silicon chip surface and forms passivation layer protection PN junction.Using equipment：Electrophoresis machine, raw material：Glass powder, IPA, lanthanum solution.
The operation principle of metal step：After phosphorous nickel metal and silicon formation silicon nickel alloy are used as by chemical reaction method
The welding foot extraction of continuous encapsulation is used.Using equipment：Ickle plating machine, raw material：Nickel solution, IPA, sulfuric acid, hydrogen peroxide.
After completing above-mentioned steps, the discharge tube such as Fig. 2 is consequently formed.Various modifications to these embodiments are to this field
Professional technician for will be apparent, the general principles defined herein can not depart from the present invention essence
In the case of refreshing or range, realize in other embodiments.Therefore, the present invention is not intended to be limited to these realities shown in this article
Example is applied, and is to fit to widest range consistent with the principles and novel features disclosed in this article.
Claims (10)
1. a kind of electric discharge pipe production method, it is characterised in that include the following steps successively：Laser marking step, preceding ground level diffusion step
Suddenly, extension ground level diffusing step, ground level diffusing step, emitting stage diffusing step, passivation layer deposition step and metal step.
2. a kind of electric discharge pipe production method as described in claim 1, it is characterised in that：Ground level in the ground level diffusing step
A concentration of 42-57ohm/sq.
3. a kind of electric discharge pipe production method as described in claim 1, it is characterised in that：Hair in the emitting stage diffusing step
It is 1633K square micron -1814K square microns to penetrate grade area.
4. a kind of electric discharge pipe production method as described in claims 1 or 2 or 3, it is characterised in that：The emitting stage diffusing step
In emitter promote the time be -220 minutes 180 minutes.
5. a kind of electric discharge pipe production method as claimed in claim 4, it is characterised in that：Using sharp in the laser marking step
The high temperature of light forms fixed figure pit in silicon face.
6. a kind of electric discharge pipe production method as claimed in claim 5, it is characterised in that：Pass through in the preceding ground level diffusing step
High-temperature diffusion process forms ground level before P+ type in P-type semiconductor silicon body.
7. a kind of electric discharge pipe production method as claimed in claim 6, it is characterised in that：Lead in the extension ground level diffusing step
It crosses high-temperature diffusion process and forms N+ types extension ground level in P-type semiconductor silicon body.
8. a kind of electric discharge pipe production method as claimed in claim 7, it is characterised in that：Lead in the ground level diffusing step step
It crosses high-temperature diffusion process and forms N+ type ground levels in P-type semiconductor silicon body.
9. a kind of electric discharge pipe production method as claimed in claim 8, it is characterised in that：Pass through in the emitting stage diffusing step
High-temperature diffusion process forms P+ type emitting stage in N-type semiconductor silicon body.
10. a kind of electric discharge pipe production method as claimed in claim 9, it is characterised in that：Lead in the passivation layer deposition step
Crossing electrophoresis makes the glass powder with cathode be deposited on silicon chip surface formation passivation layer protection PN junction under the attraction of positive electric field, and
Phosphorous nickel metal and silicon the welding foot that silicon nickel alloy is used as subsequently encapsulating is formed by chemical reaction method in metal step to draw
Go out to be used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810291540.8A CN108538722A (en) | 2018-04-03 | 2018-04-03 | Discharge pipe production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810291540.8A CN108538722A (en) | 2018-04-03 | 2018-04-03 | Discharge pipe production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108538722A true CN108538722A (en) | 2018-09-14 |
Family
ID=63482107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810291540.8A Pending CN108538722A (en) | 2018-04-03 | 2018-04-03 | Discharge pipe production method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108538722A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0298882A1 (en) * | 1987-07-03 | 1989-01-11 | STMicroelectronics S.A. | Protection thyristor with an auxiliary gate electrode |
| JPH03215979A (en) * | 1990-01-22 | 1991-09-20 | Shindengen Electric Mfg Co Ltd | Bidirectional thyristor |
| US5429953A (en) * | 1992-07-15 | 1995-07-04 | Texas Instruments Incorporated | Method of forming solid state suppressors with concave and diffused substitution regions |
| JP5255942B2 (en) * | 2008-07-31 | 2013-08-07 | 新電元工業株式会社 | Manufacturing method of semiconductor device |
-
2018
- 2018-04-03 CN CN201810291540.8A patent/CN108538722A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0298882A1 (en) * | 1987-07-03 | 1989-01-11 | STMicroelectronics S.A. | Protection thyristor with an auxiliary gate electrode |
| JPH03215979A (en) * | 1990-01-22 | 1991-09-20 | Shindengen Electric Mfg Co Ltd | Bidirectional thyristor |
| US5429953A (en) * | 1992-07-15 | 1995-07-04 | Texas Instruments Incorporated | Method of forming solid state suppressors with concave and diffused substitution regions |
| JP5255942B2 (en) * | 2008-07-31 | 2013-08-07 | 新電元工業株式会社 | Manufacturing method of semiconductor device |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180914 |
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