CN108538710A - A kind of etching apparatus and lithographic method - Google Patents
A kind of etching apparatus and lithographic method Download PDFInfo
- Publication number
- CN108538710A CN108538710A CN201810299364.2A CN201810299364A CN108538710A CN 108538710 A CN108538710 A CN 108538710A CN 201810299364 A CN201810299364 A CN 201810299364A CN 108538710 A CN108538710 A CN 108538710A
- Authority
- CN
- China
- Prior art keywords
- metal layer
- etching
- probe
- charged particle
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
Abstract
The invention discloses a kind of etching apparatus, the upper surface of substrate is covered with metal layer and the mask layer with pierced pattern successively, the etching apparatus includes etching groove, pressue device and the first spray equipment, first spray equipment is suspended from above the etching groove, for the pierced pattern through the mask layer to etching liquid of the metal layer spray added with charged particle；The pressue device is set to by the substrate in the etching groove, and for intermittently applying voltage to the metal layer, and the polarity of voltage of the metal layer is opposite with the polarity of the charged particle.The present invention in etching liquid by adding the polymeric pigments or resin colloidal particle of electrification, charged particle can be towards electrode movement when a field is applied, it to be adsorbed on the recess sidewall etched, can improve that wet etching is laterally etched, realize the purpose for carving the vertical angles taper with wet etching.
Description
Technical field
The present invention relates to base plate carving and corrosion technical field more particularly to a kind of etching apparatus and lithographic method.
Background technology
With the fast development in the fields such as Aeronautics and Astronautics, military project, X ray spectroscopy, astrophysics, sub-micron period
Metal self-supporting transmission grating becomes more and more important.Nanometer embossing is a kind of high efficiency, low cost, quick nanometer figure
Case transfer techniques, 5nm nano-patterns below have had successfully been obtained in it, have in terms of the making of sub-wavelength micro element wide
Application prospect.
The screen periods that general photoetching is not achieved are may diminish to based on the grating that nano impression makes, that is, utilize nano impression
It can obtain the unavailable first-order optical grating of general photoetching.But to imprint grating etching be again in preparing grating it is of crucial importance
A step, correct lithographic method can ensure the depth of grating, shape etc..
Make nano impression metal grating need to ensure to have it is small as possible laterally etched, to be kept for the vertical quarter of height
Erosion.Wherein, general although chemical wet etching technology has been applied to the pattern transfer of various semi-conducting materials very early
Wet etching scribes grating, and the uniformity in large area is poor, and yield rate and repeatability are bad, and grating depth is limited, easy pair
Metal grating causes laterally etched, forms the non-perpendicular angles the taper angle of rear wall (etching).In order to overcome wet etching
Disadvantage, the dry etch process used in recent years make the making yield rate of laser and device performance be obtained for raising, however,
Mask can be etched simultaneously with the material being etched in physical dry etching process, and the angles taper of the metal grating of formation are also
The inclination angle of flaring, can not ensure the etching precision of pattern, and to exist simultaneously etch rate slow for the lithographic method, in etching groove
The case where deposit largely increases.
Invention content
In view of the shortcomings of the prior art, the present invention provides a kind of etching apparatus and lithographic methods, it is ensured that carves
Rate is lost, and is effectively improved laterally etched, the vertical angles taper is etched, ensures etching precision.
In order to achieve the above purpose, present invention employs the following technical solutions：
The upper surface of a kind of etching apparatus, substrate is covered with metal layer and the mask layer with pierced pattern successively, described
Etching apparatus includes etching groove, pressue device and the first spray equipment, and first spray equipment is suspended from above the etching groove,
For the pierced pattern through the mask layer to etching liquid of the metal layer spray added with charged particle；The pressurization dress
It is arranged in by the substrate in the etching groove, for intermittently applying voltage, and the metal layer to the metal layer
Polarity of voltage it is opposite with the polarity of the charged particle.
As one of which embodiment, the charged particle is polymeric pigments or resin colloidal particle.
As one of which embodiment, the pressue device includes the pulse power, respectively from pulse power extraction
Two electrode cantilevers electrode cantilever different with being separately fixed at two on positive probe and negative probe, etching
In the process, the positive probe or the negative probe are contacted with the metal layer.
As one of which embodiment, the positive probe and the negative probe are longitudinally spaced setting, are carving
During erosion, one of the positive probe and the negative probe are contacted with the metal layer upper surface, another with
The base lower surface contact；After the completion of metal layer etching, the positive probe and the negative probe phase in the longitudinal direction
It is mutually separate, to be spaced apart respectively with the corresponding metal layer and the substrate.
As one of which embodiment, the positive probe is contacted with the metal layer upper surface, the charged particle
For hydroxyl radical negative ion pigment or resin；Alternatively, the negative probe is contacted with the metal layer upper surface, the charged particle
For amino cation pigment or resin.
As one of which embodiment, the etching apparatus further includes the first transmission dress being set in the etching groove
It sets and second conveyer, the second conveyer is described for carrying the substrate along the length direction of the etching groove
Second conveyer is used for along or the carry direction of the substrate transmits the positive probe and the negative probe backwards.
Another object of the present invention is to provide a kind of lithographic methods, including：
Towards adding charged particle in etching liquid；
Etching liquid is injected from having figuratum mask layer, the metal layer of mask layer bottom is tentatively etched；
Voltage is applied to metal layer and forms electrophoretic apparatus, makes charged particle assemble and adsorb each of to be formed on the metal layer
The side wall of groove and bottom；
After applying voltage for a period of time to metal layer, the voltage of metal layer application is removed, and towards spraying in each groove
Drench etching liquid；
Remove metal layer application voltage for a period of time after, again again to metal layer apply voltage for a period of time, lay equal stress on
This multiple process is until metal layer etching is completed.
As one of which embodiment, the charged particle is polymeric pigments or resin colloidal particle.
As one of which embodiment, in etching process, the positive probe or negative probe of the pulse power with it is described
Metal layer is in electrical contact；After the completion of the metal layer etching, the positive probe or the negative probe are disconnected with the metal layer
Connection.
As one of which embodiment, the lithographic method further includes：In etching process, transmitted in etching groove
The metal layer, the positive probe and the negative probe are moved synchronously with the metal layer respectively；The metal layer etching
After the completion, the positive probe and the negative probe move to initial position.
The present invention in etching liquid by adding the polymeric pigments or resin colloidal particle of electrification, band when a field is applied
Charged particle can be towards electrode movement, to be adsorbed on the recess sidewall etched, and it is laterally etched to improve wet etching, realizes use
Wet etching carves the purpose at the vertical angles taper.
Description of the drawings
Fig. 1 is metal layer etching process schematic diagram ideally；
Fig. 2 is the structural schematic diagram of the etching apparatus of the embodiment of the present invention；
Fig. 3 be the embodiment of the present invention under pressurised conditions when arranging situation of the charged particle in metal layer；
Fig. 4 is arranging situation of the charged particle in metal layer after the embodiment of the present invention is sprayed when being not added under pressure condition；
Fig. 5 is the realization principle figure of the etching apparatus of the embodiment of the present invention；
Fig. 6 is the structural schematic diagram of the pressue device of the embodiment of the present invention；
Fig. 7 is a kind of pulse voltage signal schematic diagram of the pressue device of the embodiment of the present invention；
Fig. 8 is the lithographic method schematic diagram of the embodiment of the present invention.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further described.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and do not have to
It is of the invention in limiting.
Refering to fig. 1 and Fig. 2, in general, the upper surface of the substrate 1 of the bottom is covered with metal layer 2 and has hollow out figure successively
The mask layer 3 of case needs to be etched on metal layer 2 first with completely the same with 3 pattern of mask layer when performing etching
It is through to the pattern of substrate 1.Effect of the mask layer 3 as guard metal layer 2, avoids the area that need not be etched on metal layer 2
Domain is etched corrosion, after forming the pattern consistent with 3 pattern of mask layer on metal layer 2, as grating use.
It is serious laterally etched to avoid metal layer 2 from occurring in etching process, ensure the vertical angles taper, the present invention
The etching apparatus of embodiment includes etching groove 10, pressue device 20, the first spray equipment 30 and the second spray equipment 30 ', etching
Slot 10 is long trough construction, is made of corrosion-resistant material, inside can be used for placing and substrate 1 and contain etching liquid.First
Spray equipment 30, the second spray equipment 30 ' all have multiple nozzles, and the first spray equipment 30 is suspended from 10 top of etching groove, is used for
The etching liquid of charged particle is added with to the spray of metal layer 2 through the pierced pattern of mask layer 3, the second spray equipment 30 ' is fixed
In 10 bottom of etching groove, for spraying etching liquid towards 1 bottom surface of substrate, to wash away the charged particle K of 1 bottom surface of substrate absorption；Pressurization
Device 20 is set to by the substrate 1 in etching groove 10, for intermittently applying voltage to metal layer 2, and is applied to metal layer 2
Polarity of voltage is opposite with the polarity of charged particle.Preferably, charged particle K is polymeric pigments or resin colloidal particle, example
Such as, amino cation or hydroxyl radical negative ion pigment or resin (such as polyacrylamide) have stronger suction in metal surface
Attached power.
As shown in Figure 3 and Figure 4, the present embodiment is illustrated so that charged particle is negatively charged as an example, it is to be understood that
When charged particle is positively charged, those skilled in the art can make simple adjustment to realize the present invention according to the present embodiment
Technique effect.First, etching liquid erodes a part of metal layer 2 through mask layer 3 so that with 3 pattern face of mask layer
2 region of metal layer forms the groove of certain depth, then, applies voltage to metal layer 2, metal layer 2 is made to be used as positive electrode,
Due to the electrophoresis of charged particle in the electric field, electronegative charged particle K can be towards 2 surface aggregation of metal layer, to adsorb
On each groove inner wall of metal layer 2 and the surface of bottom wall, etching reaction is prevented further to carry out；Then, it removes on metal layer 2
Voltage, electrophoretic action then disappear, but charged particle K is adsorbed on the groove surfaces of metal layer 2 by Van der Waals force, at this point, with
Each groove for the etching liquid impact metal layer 2 that the nozzle of first spray equipment 30 sprays, the charged particle K of groove floor are rushed
It walks, peel off, but the charged particle K of groove side still keeps adsorbed state, etching can continue vertically to carry out, therefore avoid cross
To etching, voltage alternately so is applied to metal layer 2, removes voltage, and coordinates the pressure of spray, etching process can be basic
The direction for remaining perpendicular to metal layer 2 carries out, until the groove is through to 1 surface of substrate.
In conjunction with shown in Fig. 2, Fig. 5 and Fig. 6, pressue device 20 includes the pulse power 21, respectively from the extraction of the pulse power 21
Positive probe 23 on two electrode cantilevers 22 electrode cantilever 22 different with being separately fixed at two and negative probe 24, are being carved
During erosion, positive probe 23 is contacted with metal layer 2.
Positive probe 23 and negative probe 24 are longitudinally spaced setting, in etching process, positive probe 23 and metal
The contact of 2 upper surface of layer, negative probe 24 are contacted with 1 lower surface of substrate；After the completion of metal layer 2 etches, positive probe 23 and cathode
Probe 24 is located remotely from each other in the longitudinal direction, to be spaced apart respectively with corresponding metal layer 2 and substrate 1.When charged particle K is negatively charged
When, positive probe 23 is contacted with 2 upper surface of metal layer；When charged particle K is positively charged, negative probe 24 and 2 upper table of metal layer
Face contacts.
Further, etching apparatus also has the second conveyer 40 and second conveyer being set in etching groove 10
50, second conveyer 40 is used for the length direction handling substrate 1 along etching groove 10, and second conveyer 50 is used for along or carries on the back
Positive probe 23 and negative probe 24 are transmitted to the carry direction of substrate 1.
In the etching process of one piece of substrate, second conveyer 50 is identical along the direction of transfer of second conveyer 40
And it moves synchronously；After the completion of the block base plate carving and corrosion, two electrode cantilevers 22 open so that positive probe 23 and negative probe 24 are mutual
It is mutually separate and be detached from and the contact of substrate, metal layer, then sender of the second conveyer 50 against second conveyer 40
To transmission positive probe 23 and negative probe 24, positive probe 23 and negative probe 24 is set to return to initial position, under preparation continues
The etching of one piece of substrate.
Second conveyer 40 generally uses transfer roller, and second conveyer 50 is using transmission crawler belt, preferably two transmission
Crawler belt is separately positioned on the both sides of the width direction of etching groove 10, controls two pairs of positive probes 23 respectively and negative probe 24 moves
State.To ensure that the performance of equipment, the outside of transmission crawler belt, positive probe 23 and negative probe 24 use polytetrafluoroethyl-ne
Alkene or other acidproof base material claddings.The syringe needle of positive probe 23 and negative probe 24 is that smooth arc surface designs, diameter
For 0.1mm-2mm, probe is preferably apart from substrate end-face 2mm-5mm.When initial position (when contactless state) on substrate
Lower surface height is 1mm-5mm.When detecting that substrate 1 enters etching groove 10, upper and lower probe clamps, accordingly to contact substrate
Upper and lower surface.
Electrode cantilever 22 plays the role of circuit supporting medium, for the metal or alloy with some strength and toughness, such as
Carbon steel, chromium steel, nickel steel etc..In pressue device 20, it is contemplated that etching solution has very strong corrosivity, removes positive probe 23 and cathode
Probe 24 uses inert metal (such as Pt, Au etc.) with substrate, metal layer contact site, and it is close that other are all made of polytetrafluoroethylene material
Envelope.
Such as Fig. 7, the pulse power 21 uses square-wave pulse, and voltage can be in 0.5V~10V ranges, to be no more than etch systems
Premised on sedimentation potential or gas evolution current potential, according to carrying out adjusting appropriate situations such as practical etch-rate.
As shown in figure 8, correspondingly, the present invention also provides a kind of lithographic methods, include mainly：
Towards adding charged particle in etching liquid；
Etching liquid is injected from having figuratum mask layer, the metal layer of mask layer bottom is tentatively etched；
Voltage is applied to metal layer and forms electrophoretic apparatus, makes charged particle assemble and adsorb each of to be formed on the metal layer
The side wall of groove and bottom；
Voltage is applied for a period of time after (t1 of such as Fig. 7) to metal layer, removes the voltage of metal layer application, and towards each recessed
Etching liquid is sprayed in slot, the charged particle of bottom portion of groove is stripped and continues to etch；
The voltage of metal layer application is removed for a period of time after (t2 of such as Fig. 7), voltage one is applied to metal layer again again
The section time, and this process is repeated until metal layer etching is completed, that is, the starting voltage of the pulse power is 0.
As one of which embodiment, charged particle is polymeric pigments or resin colloidal particle.In etching process,
The positive probe or negative probe of the pulse power are in electrical contact with metal layer, that is, when charged particle is positively charged, the pulse power is born
Pole probe is in electrical contact with metal layer, and when charged particle is negatively charged, positive probe and the metal layer of the pulse power are in electrical contact, and are ensured
Charged particle is adsorbed on layer on surface of metal；After the completion of metal layer etching, positive probe or negative probe are disconnected with metal layer.
After the voltage for removing metal layer application, while also needing to spray etching liquid towards 1 bottom surface of substrate by the second spray equipment 30 ', with
Wash away the charged particle K of 1 bottom surface of substrate absorption.
In etching process, metal layer 2 can also be transmitted with substrate 1 using second conveyer 40 in etching groove, just
Pole probe 23 and negative probe 24 are moved synchronously with metal layer 2 respectively；After the completion of metal layer 2 etches, positive probe 23 and cathode
Probe 24 no longer contacts corresponding metal layer and substrate, and accelerates under the transmission of second conveyer 50 reverse movement to initial
Position, in case etching acts next time.
In conclusion the present invention is in etching liquid by adding the polymeric pigments or resin colloidal particle of electrification, when applying
Charged particle can be moved towards metal layer when added electric field, and under the impact of spray pressure, metal layer etches the band electrochondria of trench bottom
Son is peeled off, but its side wall is still adsorbed with charged particle, thus can prevent it is laterally etched, ensure etching direction vertically to
Under, it improves that wet etching is laterally etched, realizes the purpose for carving the vertical angles taper with wet etching.
The above is only the specific implementation mode of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection domain of the application.
Claims (10)
1. a kind of etching apparatus, which is characterized in that the upper surface of substrate (1) is covered with metal layer (2) and has hollow out figure successively
The mask layer (3) of case, the etching apparatus include etching groove (10), pressue device (20) and the first spray equipment (30), described
First spray equipment (30) is suspended from above the etching groove (10), for the pierced pattern through the mask layer (3) to described
Etching liquid of metal layer (2) spray added with charged particle；The pressue device (20) is set to the institute in the etching groove (10)
It is other to state substrate (1), for intermittently applying voltage, and the polarity of voltage of the metal layer (2) and institute to the metal layer (2)
The polarity for stating charged particle is opposite.
2. etching apparatus according to claim 1, which is characterized in that the charged particle is polymeric pigments or resin glue
Body particle.
3. etching apparatus according to claim 1, which is characterized in that the pressue device (20) includes the pulse power
(21), respectively from two electrode cantilevers (22) of the pulse power (21) extraction electricity different with being separately fixed at two
Positive probe (23) on pole cantilever (22) and negative probe (24), in etching process, the positive probe (23) or described
Negative probe (24) is contacted with the metal layer (2).
4. etching apparatus according to claim 3, which is characterized in that the positive probe (23) and the negative probe
(24) it is longitudinally spaced setting, in etching process, wherein the one of the positive probe (23) and the negative probe (24)
A to be contacted with the metal layer (2) upper surface, another is contacted with the substrate (1) lower surface；The metal layer (2) has etched
Cheng Hou, the positive probe (23) and the negative probe (24) are located remotely from each other in the longitudinal direction, with respectively with the corresponding gold
Belong to layer (2) and the substrate (1) is spaced apart.
5. etching apparatus according to claim 4, which is characterized in that the positive probe (23) and the metal layer (2)
Upper surface contacts, and the charged particle is hydroxyl radical negative ion pigment or resin；Alternatively, the negative probe (24) and the gold
Belong to the contact of layer (2) upper surface, the charged particle is amino cation pigment or resin.
6. according to any etching apparatus of claim 1-5, which is characterized in that further include being set in the etching groove (10)
Second conveyer (40) and second conveyer (50), the second conveyer (40) be used for along the etching groove (10)
Length direction carry the substrate (1), the second conveyer (50) is used for the carrying along or backwards to the substrate (1)
Transmit the positive probe (23) and the negative probe (24) in direction.
7. a kind of lithographic method, which is characterized in that including：
Towards adding charged particle in etching liquid；
Etching liquid is injected from having figuratum mask layer, the metal layer of mask layer bottom is tentatively etched；
Voltage is applied to metal layer and forms electrophoretic apparatus, so that charged particle is assembled and adsorbs each groove formed on the metal layer
Side wall and bottom；
After applying voltage for a period of time to metal layer, the voltage of metal layer application is removed, and carve towards spray in each groove
Lose liquid；
Remove metal layer application voltage for a period of time after, again again to metal layer apply voltage for a period of time, and repeat this
Process is until metal layer etching is completed.
8. lithographic method according to claim 7, which is characterized in that the charged particle is polymeric pigments or resin glue
Body particle.
9. lithographic method according to claim 7, which is characterized in that in etching process, the positive probe of the pulse power
Or negative probe is in electrical contact with the metal layer；After the completion of the metal layer etching, the positive probe or the negative probe
It is disconnected with the metal layer.
10. lithographic method according to claim 9, which is characterized in that further include：In etching process, in etching groove
The metal layer is transmitted, the positive probe and the negative probe are moved synchronously with the metal layer respectively；The metal layer
After the completion of etching, the positive probe and the negative probe move to initial position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810299364.2A CN108538710B (en) | 2018-04-04 | 2018-04-04 | Etching equipment and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810299364.2A CN108538710B (en) | 2018-04-04 | 2018-04-04 | Etching equipment and etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108538710A true CN108538710A (en) | 2018-09-14 |
| CN108538710B CN108538710B (en) | 2021-05-11 |
Family
ID=63483172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810299364.2A Active CN108538710B (en) | 2018-04-04 | 2018-04-04 | Etching equipment and etching method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108538710B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109846371A (en) * | 2019-03-22 | 2019-06-07 | 黄德昶 | The manufacturing method of non-stick pan tool |
| CN110106504A (en) * | 2019-04-04 | 2019-08-09 | 深圳市华星光电技术有限公司 | A kind of etching machines |
| CN110993614A (en) * | 2019-11-27 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel preparation device and method |
| CN111223772A (en) * | 2018-11-26 | 2020-06-02 | 台湾积体电路制造股份有限公司 | Wet etching equipment and method for using same |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904156A (en) * | 1997-09-24 | 1999-05-18 | International Business Machines Corporation | Dry film resist removal in the presence of electroplated C4's |
| CN1700425A (en) * | 2004-05-19 | 2005-11-23 | 三星电子株式会社 | Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates |
| US20060115921A1 (en) * | 2004-12-01 | 2006-06-01 | Lexmark International, Inc. | Micro-fluid ejection head containing reentrant fluid feed slots |
| CN101211922A (en) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | Capacitor having tapered cylindrical storage node and method for manufacturing the same |
| CN103606518A (en) * | 2013-11-15 | 2014-02-26 | 英利集团有限公司 | A wet etching method and a wet etching apparatus |
| CN104018158A (en) * | 2014-05-26 | 2014-09-03 | 京东方科技集团股份有限公司 | Wet etching device and wet etching method |
| JP2015198156A (en) * | 2014-04-01 | 2015-11-09 | セイコーエプソン株式会社 | Patterning method, method of manufacturing electro-optic device, electro-optic device, and method of manufacturing substrate |
| CN106409751A (en) * | 2015-07-27 | 2017-02-15 | 中芯国际集成电路制造(上海)有限公司 | Formation method of semiconductor structure |
-
2018
- 2018-04-04 CN CN201810299364.2A patent/CN108538710B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904156A (en) * | 1997-09-24 | 1999-05-18 | International Business Machines Corporation | Dry film resist removal in the presence of electroplated C4's |
| CN1700425A (en) * | 2004-05-19 | 2005-11-23 | 三星电子株式会社 | Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates |
| US20060115921A1 (en) * | 2004-12-01 | 2006-06-01 | Lexmark International, Inc. | Micro-fluid ejection head containing reentrant fluid feed slots |
| CN101211922A (en) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | Capacitor having tapered cylindrical storage node and method for manufacturing the same |
| CN103606518A (en) * | 2013-11-15 | 2014-02-26 | 英利集团有限公司 | A wet etching method and a wet etching apparatus |
| JP2015198156A (en) * | 2014-04-01 | 2015-11-09 | セイコーエプソン株式会社 | Patterning method, method of manufacturing electro-optic device, electro-optic device, and method of manufacturing substrate |
| CN104018158A (en) * | 2014-05-26 | 2014-09-03 | 京东方科技集团股份有限公司 | Wet etching device and wet etching method |
| CN106409751A (en) * | 2015-07-27 | 2017-02-15 | 中芯国际集成电路制造(上海)有限公司 | Formation method of semiconductor structure |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111223772A (en) * | 2018-11-26 | 2020-06-02 | 台湾积体电路制造股份有限公司 | Wet etching equipment and method for using same |
| CN111223772B (en) * | 2018-11-26 | 2022-06-24 | 台湾积体电路制造股份有限公司 | Wet etching equipment and method for using same |
| CN109846371A (en) * | 2019-03-22 | 2019-06-07 | 黄德昶 | The manufacturing method of non-stick pan tool |
| CN110106504A (en) * | 2019-04-04 | 2019-08-09 | 深圳市华星光电技术有限公司 | A kind of etching machines |
| CN110106504B (en) * | 2019-04-04 | 2021-03-23 | Tcl华星光电技术有限公司 | Etching equipment |
| CN110993614A (en) * | 2019-11-27 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel preparation device and method |
| CN110993614B (en) * | 2019-11-27 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel preparation device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108538710B (en) | 2021-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108538710A (en) | A kind of etching apparatus and lithographic method | |
| KR100204405B1 (en) | Method and apparatus for manufacturing interconnects with fine lines and spacing | |
| KR101250685B1 (en) | Method and electrode for defining and replicating structures in conducting materials | |
| CN102167280B (en) | Super-hydrophobic silicon micron-nano composite structure and preparation method thereof | |
| EP0938597A1 (en) | Method for anisotropic etching of structures in conducting materials | |
| CN104409328B (en) | The cleaning method and cleaning device of mask plate | |
| CN103769700A (en) | Electrolysis machining method for surface texture of high potential inert metal template | |
| CN107052484A (en) | A kind of device and jet electrochemical machining method for jet Electrolyzed Processing very low power | |
| Lai et al. | Fabrication of microlens array on silicon surface using electrochemical wet stamping technique | |
| Mandler et al. | Microelectrochemistry on surfaces with the scanning electrochemical microscope (SECM) | |
| CN101085674B (en) | Microchannel cleaning method | |
| Tang et al. | Micromachining on copper and nickel by electrochemical wet stamping | |
| CN210148121U (en) | Controllable adhesion device for generating liquid bridge by electric field | |
| CN112479154A (en) | Preparation method of ordered metal nano needle tip array | |
| US20070034518A1 (en) | Method of patterning ultra-small structures | |
| CN108517521B (en) | Etching equipment and etching method for automatically controlling etching end point | |
| CN206378451U (en) | A kind of electrochemical corrosion legal system pin mechanism | |
| Hu et al. | Facile and scalable fabrication of Ni cantilever nanoprobes using silicon template and micro-electroforming techniques for nano-tip focused electrohydrodynamic jet printing | |
| CN104985266B (en) | Nano impression cylinder mould preparation device and preparation method | |
| Zhou et al. | Fabrication of microstructures on GaAs with pulsed electrochemical wet stamping | |
| CN114836802B (en) | Adhesive composite processing method of micro-nano hydrophobic structure | |
| EP1227524A3 (en) | Solar cell and method of manufacturing same | |
| CN207483370U (en) | A kind of graphene shifts drying unit | |
| CN104018211A (en) | Nano-accuracy electrochemical etching processing method | |
| CN104018158A (en) | Wet etching device and wet etching method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |