CN108517521B - Etching equipment and etching method for automatically controlling etching end point - Google Patents
Etching equipment and etching method for automatically controlling etching end point Download PDFInfo
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- CN108517521B CN108517521B CN201810301838.2A CN201810301838A CN108517521B CN 108517521 B CN108517521 B CN 108517521B CN 201810301838 A CN201810301838 A CN 201810301838A CN 108517521 B CN108517521 B CN 108517521B
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- 238000005530 etching Methods 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 71
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- 239000000523 sample Substances 0.000 claims abstract description 46
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- 230000007246 mechanism Effects 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 230000000712 assembly Effects 0.000 claims abstract description 5
- 238000000429 assembly Methods 0.000 claims abstract description 5
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052742 iron Inorganic materials 0.000 claims description 7
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- 229910052737 gold Inorganic materials 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 2
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- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
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- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses etching equipment, which comprises an etching tank for containing etching liquid and a pressurizing device for applying voltage to a metal layer immersed in the etching liquid, wherein the pressurizing device is used for simultaneously contacting two different parts of the metal layer to form a pressurizing loop; the pressurizing device comprises two groups of electrode assemblies, each group of electrode assembly comprises an electromagnet mechanism and a clamping reed which are oppositely arranged, and an electrode probe which is electrically connected to the inner surface of the electromagnet mechanism, and the clamping reed is close to the electrode probe under the attraction of the electromagnet mechanism. The invention also discloses an etching method for automatically controlling the etching end point. The invention realizes the clamping of the electrode probe and the metal layer by utilizing the matching of the electromagnet mechanism and the clamping reed, and automatically removes the clamping action on the metal layer when the etching end point is reached by utilizing the influence of the resistance change of the metal layer on the suction force change of the electromagnet mechanism in the etching process, thereby realizing the automatic control of the etching end point and improving the automation degree of etching.
Description
Technical Field
The invention relates to the technical field of wet etching, in particular to etching equipment and an etching method for automatically controlling an etching end point.
Background
At present, there are two main methods for determining the etching endpoint in the wet etching process, one of which is a visual method, i.e. when the substrate enters the etching groove and the meter is started to be pinched, the metal layer is completely etched by observing the substrate with eyes, and the time is recorded as the accurate etching time (just etch time). The method is simple and easy to implement, but has high subjectivity and is difficult to obtain an accurate value due to interference of the color of the film layer and the etching solution. The other method is to measure the etching rate of the film layer and then calculate the accurate etching time based on the etching rate, the method needs to deposit a very thick film layer in advance for each metal to test the etching rate, the method is relatively accurate, but when the etching film layer is a composite layer such as Al/Mo and Mo/Al/Mo, the etching rate of the composite layer is greatly different from that of a single film layer due to the influence of the original battery effect between metal layers, and the method for calculating the etching rate based on the single film layer cannot be applied to the composite film layer and is not beneficial to accurately controlling the etching end point.
Disclosure of Invention
In view of the defects in the prior art, the invention provides the etching equipment and the etching method for automatically controlling the etching end point, which can accurately control the etching end point and is beneficial to improving the automation degree of etching.
In order to achieve the purpose, the invention adopts the following technical scheme:
an etching device comprises an etching tank for containing etching liquid and a pressurizing device for applying voltage to a metal layer immersed in the etching liquid, wherein the pressurizing device is used for simultaneously contacting two different parts of the metal layer to form a pressurizing loop; the pressurizing device comprises two groups of electrode assemblies, each group of electrode assembly comprises an electromagnet mechanism and a clamping reed which are oppositely arranged, and an electrode probe which is electrically connected to the inner surface of the electromagnet mechanism, and the clamping reed is deformed under the attraction of the electromagnet mechanism to be close to the electrode probe.
In one embodiment, the pressurizing device further comprises a power source and two opposite electrode cantilevers respectively led out from each pole of the power source, and each set of the electrode probe and the clamping reed are respectively fixed on the inner surfaces of the two opposite electrode cantilevers.
As one embodiment, the electrode cantilevers are elastic cantilevers, and when the electromagnet mechanism does not work, the oppositely arranged electrode cantilevers tilt towards directions away from each other.
In one embodiment, the clamping spring comprises an iron sheet connected to the electrode cantilever and an inert metal connected to the end of the iron sheet.
As one embodiment, the etching apparatus further includes a first spraying device and a second spraying device, where the first spraying device and the second spraying device are respectively disposed at the bottom and above the etching groove and are respectively used for spraying the etching liquid toward the upper surface of the metal layer and the lower surface of the substrate below the metal layer.
As an implementation manner, the etching apparatus further includes a first conveying device and a second conveying device disposed in the etching groove, the first conveying device is configured to convey the substrate along a length direction of the etching groove, and the second conveying device is configured to convey the pressurizing device along or away from a conveying direction of the substrate.
In one embodiment, the first conveying device is a conveying roller.
In one embodiment, the second conveying device is a conveying crawler belt, and the pressurizing device is fixed on the conveying crawler belt.
As one embodiment, the number of the second conveying devices is two, and the two second conveying devices are respectively fixed on two sides of the etching groove.
Another object of the present invention is to provide an etching method for automatically controlling an etching endpoint, using the above etching apparatus, including:
placing a substrate into an etching tank, and immersing the metal layer on the surface of the substrate in etching liquid;
the pressurizing device is electrified, and the two groups of electrode probes are respectively contacted with the clamping reeds and clamp the metal layer and the substrate;
when the current is reduced to be less than the preset value, the clamping reed restores to be deformed and is separated from the electromagnet mechanism.
The invention realizes the clamping of the electrode probe and the metal layer by utilizing the matching of the electromagnet mechanism and the clamping reed, and automatically removes the clamping action on the metal layer when the etching end point is reached by utilizing the influence of the resistance change of the metal layer on the suction force change of the electromagnet mechanism in the etching process, thereby realizing the automatic control of the etching end point and improving the automation degree of etching.
Drawings
FIG. 1 is a schematic structural diagram of an etching apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a pressurizing device according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a state of etching performed according to an embodiment of the present invention;
FIG. 4 is a schematic diagram showing the change of loop resistance with time during etching according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a state after etching according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of an etching method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, an etching apparatus according to an embodiment of the present invention mainly includes an etching tank 10 for containing an etching solution and a pressurizing device 20 for applying a voltage to a metal layer 2 immersed in the etching solution, the surface of an insulating substrate 1 has the metal layer 2 to be etched, the surface of the metal layer 2 is covered with a protective layer (not shown) having a protective pattern, the surface of the metal layer 2 without the protective layer is etched during an etching process to form a hollow pattern consistent with the protective pattern, and the surface of the metal layer 2 with the protective layer is retained. During etching, the pressurizing device 20 simultaneously contacts two different parts of the metal layer 2 to form a pressurizing loop, preferably, the pressurizing device 20 respectively contacts parts, which are positioned on two different sides of the etching tank 10, of the metal layer 2, the etching liquid is also conducted with the pressurizing device 20 while immersing the metal layer 2, and voltage is applied to the two different parts of the metal layer 2 through the pressurizing device 20, so that the metal layer 2 and the etching liquid are both used as conductive media; after the etching is completed, the pressurizing means 20 breaks contact with the metal layer 2.
Specifically, as shown in fig. 2, the pressurizing means 20 of the present embodiment includes a power source 21 and two opposing electrode cantilevers 22 respectively led out from each pole of the power source 21, and two sets of electrode assemblies, each set of electrode probes 23a and clamping springs 24 being respectively fixed to inner surfaces of the two opposing electrode cantilevers 22. Each set of electrode assembly includes an electromagnet mechanism 23 and a clamping spring 24 disposed opposite to each other, and an electrode probe 23a electrically connected to an inner surface of the electromagnet mechanism 23, and the clamping spring 24 is generally a relatively tough metal sheet such as an iron sheet.
As shown in fig. 3, in an initial state, the substrate 1 is placed in an etching tank filled with an etching solution and completely immersed in the etching solution, the two electrode probes 23a are respectively contacted with two sides of the metal layer 2 to form a loop, and meanwhile, the electromagnet mechanism 23 is energized to attract the clamping reed 24 at the lower end, because the two electrode probes 23a are conducted through the metal layer 2, the resistance is small, the current is large, and the electromagnet mechanism 23 has a large attraction force, the electrode probes 23a and the clamping reed 24 respectively clamp the metal layer 2 and the substrate 1, and the etching process is smoothly performed; as shown in fig. 4, as the etching reaction proceeds, the metal layer 2 in contact with the etching solution becomes thinner and thinner, the resistance R in the loop gradually increases, the current gradually decreases, and when the metal layer 2 at a certain point is broken and penetrated, the resistance R suddenly increases and the current suddenly decreases, which is the first turning point time t1, at which the metal layer 2 between the two electrode probes 23a is not completely broken, the etching is continued until the metal layer 2 is completely broken, at which time the conductive medium between the two electrode probes 23a is converted from metal into solution ions, the resistance sharply increases at a faster rate, the current correspondingly sharply decreases, which is the second turning point time t2, t2 is the accurate etching time (just time) in an ideal state, and in consideration of the requirements of the verticality (tap) of the etching trench, the CD loss (the amount of line variation before and after etching), a certain over etching (over time t 0) is required after etching, therefore, the total etching time T is T2+ T0.
When the time t2 is reached, the loop current is sharply reduced, and since the two electrode probes 23a are conducted through ions, the resistance is large, the current is small, the attraction force of the electromagnet mechanism 23 is insufficient, so that the lower clamping reed 24 can not be attracted any more, and the clamping reed 24 automatically returns under the deformation force, so that the clamped part of the electrode probe 23a is automatically released, that is, as shown in fig. 5, the distance between the clamping reed 24 and the electrode probe 23a is larger than the sum of the thicknesses of the substrate 1 and the metal layer 2, and the electrode probe 23a cannot be reliably contacted with the metal layer 2.
Preferably, the electrode cantilevers 22 are elastic cantilevers, and when the electromagnet mechanism 23 does not work, the oppositely disposed electrode cantilevers 22 tilt in a direction away from each other. The clamping reed 24 comprises an iron sheet connected with the electrode cantilever 22 and an inert metal (such as Pt, Au, etc.) connected with the end of the iron sheet, so that the clamping reed 24 has a certain service life and is protected from corrosion of an etching solution. In addition, an ammeter A can be connected in series on the pressurizing loop, so that the loop current can be observed in real time, and the etching process can be conveniently and visually monitored.
The bottom and the upper side of the etching groove 10 are respectively provided with a first spraying device 30 and a second spraying device 30 ' which spray etching liquid towards the upper surface of the metal layer 2 and the lower surface of the substrate 1 below the metal layer 2, the first spraying device 30 and the second spraying device 30 ' are respectively provided with a plurality of spray heads, and residual particles attached to the surfaces of the substrate 1 and the metal layer 2 can be washed away by high pressure generated by the first spraying device 30 and the second spraying device 30 '.
Furthermore, the etching apparatus further comprises a first conveying device 40 and a second conveying device 50 which are arranged in the etching groove 10, wherein the first conveying device 40 is used for conveying the substrate 1 along the length direction of the etching groove 10, the second conveying device 50 is used for conveying the pressurizing device 20 along or away from the conveying direction of the substrate 1, and the two second conveying devices 50 are respectively used for etching two sides of the etching groove 10 so as to respectively control the conveying of the electrode probes 23a, the clamping spring pieces 24 and the substrate 1 at the two sides. In the etching process, the substrate 1 is conveyed along the length direction of the etching groove 10, and the first conveying device 40 and the second conveying device 50 synchronously operate, so that the electrode probe 23a and the clamping reed 24 are kept in good contact with the substrate 1; after the etching is completed, the electromagnet mechanism 23 releases the adsorption of the clamping reed 24, and the electrode probe 23a and the clamping reed 24 leave the substrate 1 and move in reverse acceleration to the initial position to prepare for continuing the etching of the next substrate. The first conveyor 40 is typically a conveyor roller, the second conveyor 50 is a conveyor belt, and the press 20 is fixed to the conveyor belt.
When the current of the pressurizing loop is not less than the preset value, the electromagnet mechanism 23 attracts the clamping reed 24 to deform the clamping reed 24, so that the electrode probe 23a and the clamping reed 24 respectively contact the metal layer 2 and the substrate 1 on the bottom surface of the metal layer 2, and when the current of the pressurizing loop is less than the preset value, the clamping reed 24 restores to be deformed and is far away from the electromagnet mechanism 23.
In order to ensure the service performance of the equipment, the transmission crawler and the electrode probe 23a are coated by polytetrafluoroethylene or other acid and alkali resistant materials. The needle head of the electrode probe 23a is designed to be a smooth arc surface, the diameter of the electrode probe is 0.1mm-0.5mm, and the distance between the electrode probe 23a and the surface of the metal layer 2 is preferably 2mm-5 mm. The height from the upper surface of the metal layer 2 at the initial position (i.e., in a non-contact state) is 1mm to 2mm, and when it is detected that the substrate 1 enters the etching bath 10, the electrode probe 23a is pressed down to contact the metal layer 2.
The clamping reed 24 is a strip-shaped sheet-like structure, the width of which can be 2mm-3mm, and preferably the symmetry center thereof coincides with the symmetry center of the electrode probe 23 a. In the initial position, the clamping spring 24 is 1mm to 2mm in height from the lower surface of the substrate 1, and is attracted by the electromagnet to be closely attached to the lower surface of the substrate 1 after the circuit is completed, thereby fixing the electrode probe 23 a.
The electrode cantilever 22 functions as a circuit supporting medium and is made of a metal or alloy having a certain strength and toughness, such as carbon steel, chrome steel, nickel steel, etc. In the pressurizing device 20, in consideration of the strong corrosiveness of the etching solution, inert metal (such as Pt, Au, etc.) is used for the contact portion between the electrode probe 23a and the metal layer 2 and the clamping reed 24 and the substrate 1, and the other portions are sealed by polytetrafluoroethylene material.
As shown in fig. 6, the present invention further provides an etching method for automatically controlling an etching end point, comprising:
s01, placing the substrate 1 into the etching tank 10, and immersing the metal layer 2 on the surface of the substrate 1 in the etching solution;
s02, the pressurizing device 20 is powered on, under the attraction of the electromagnet mechanism 23, the two groups of electrode probes 23a are respectively contacted with the clamping reeds 24 and clamp the metal layer 2 and the substrate 1, the two groups of electrode probes 23a are conducted through the metal layer 2, the resistance is small, the current is large, the electromagnet mechanism 23 has large attraction, so that the electrode probes 23a and the clamping reeds 24 respectively clamp the metal layer 2 and the substrate 1, and the etching process is smoothly carried out;
s03, with the progress of the etching reaction, the metal layer 2 in contact with the etching liquid is thinner and thinner, the resistance R in the loop is gradually increased, the current is gradually reduced, when the metal layer 2 is completely cut off after etching, the two electrode probes 23a are conducted through ions, the resistance is large, the current is small, when the current is reduced to be smaller than a preset value, the clamping reed 24 restores to be deformed and is separated from the electromagnet mechanism 23, and the etching is automatically completed.
According to the invention, the electrode probe and the metal layer are clamped by matching the electromagnet mechanism and the clamping reed, and the clamping effect on the metal layer is automatically removed when the etching end point is reached by the equipment by utilizing the influence of the resistance change of the metal layer on the suction force change of the electromagnet mechanism in the etching process, so that the automatic control of the etching end point is realized, the manual intervention is not needed, and the automation degree of etching is improved. Meanwhile, the invention also adopts the first conveying device to convey the substrate in the etching process, and utilizes the second conveying device to convey the electrode probe and the clamping reed, when the etching of one substrate is finished, the electrode probe and the clamping reed automatically release the clamping of the substrate, the second conveying device conveys the electrode probe and the clamping reed to the initial position, and the etching process of the next substrate is continued, so that the etching efficiency is high.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (7)
1. An etching apparatus, comprising an etching tank (10) for containing an etching liquid, a pressurizing device (20) for applying a voltage to a metal layer (2) on a substrate (1) immersed in the etching liquid, a first conveying device (40) and a second conveying device (50) arranged in the etching tank (10), wherein the pressurizing device (20) is used for simultaneously contacting two different parts of the metal layer (2) to form a pressurizing loop; the pressurizing device (20) comprises two groups of electrode assemblies, each group of electrode assemblies comprises an electromagnet mechanism (23), a clamping reed (24) and an electrode probe (23a) electrically connected to the inner surface of the electromagnet mechanism (23), the clamping reed (24) deforms under the attraction of the electromagnet mechanism (23) to be close to the electrode probe (23a), so that the electrode probe (23a) and the clamping reed (24) clamp the metal layer (2) and the substrate (1) respectively, and automatically return under the deformation force when a conductive medium between the two electrode probes (23a) is converted from metal to solution ions, and the interval between the clamping reed (24) and the electrode probe (23a) is larger than the sum of the thicknesses of the substrate (1) and the metal layer (2); the pressurizing device (20) further comprises a power supply (21) and two opposite electrode cantilevers (22) respectively led out from each pole of the power supply (21), and each group of the electrode probes (23a) and the clamping reed (24) are respectively fixed on the inner surfaces of the two opposite electrode cantilevers (22); the electrode cantilevers (22) are elastic cantilevers, and when the electromagnet mechanism (23) does not work, the oppositely arranged electrode cantilevers (22) tilt towards directions deviating from each other; the first conveying device (40) is used for conveying the substrate (1) along the length direction of the etching groove (10), and the second conveying device (50) is used for conveying the pressurizing device (20) along or opposite to the conveying direction of the substrate (1).
2. Etching apparatus according to claim 1, wherein the clamping reed (24) comprises an iron sheet connected to the electrode cantilever (22) and an inert metal connected to an end of the iron sheet.
3. The etching apparatus according to claim 1, further comprising a first spraying device (30) and a second spraying device (30 '), wherein the first spraying device (30) and the second spraying device (30') are respectively arranged at the bottom and above the etching tank (10) and are respectively used for spraying etching liquid towards the upper surface of the metal layer (2) and the lower surface of the substrate (1) below the metal layer (2).
4. Etching apparatus according to any one of claims 1 to 3, characterized in that the first conveying means (40) are conveying rollers.
5. Etching apparatus according to any one of claims 1 to 3, characterized in that the second conveyor (50) is a conveyor track, on which the pressure means (20) are fixed.
6. Etching apparatus according to any one of claims 1 to 3, characterized in that the number of the second conveying means (50) is two, and the two conveying means are respectively fixed on both sides of the etching tank (10).
7. An etching method for automatically controlling an etching end point, characterized by using the etching apparatus of any one of claims 1 to 6, comprising:
putting a substrate (1) into an etching tank (10) to immerse a metal layer (2) on the surface of the substrate (1) in etching liquid;
the pressurizing device (20) is electrified, and two groups of electrode probes (23a) are respectively contacted with clamping reeds (24) and clamp the metal layer (2) and the substrate (1);
when the current is reduced to be less than the preset value, the clamping reed (24) restores the deformation and is separated from the electromagnet mechanism (23).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810301838.2A CN108517521B (en) | 2018-04-04 | 2018-04-04 | Etching equipment and etching method for automatically controlling etching end point |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810301838.2A CN108517521B (en) | 2018-04-04 | 2018-04-04 | Etching equipment and etching method for automatically controlling etching end point |
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| CN108517521B true CN108517521B (en) | 2020-04-10 |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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