CN108531877A - A kind of TiZrVHf quaternarys Fe Getter Films Prepared and preparation method thereof - Google Patents

A kind of TiZrVHf quaternarys Fe Getter Films Prepared and preparation method thereof Download PDF

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CN108531877A
CN108531877A CN201810584597.7A CN201810584597A CN108531877A CN 108531877 A CN108531877 A CN 108531877A CN 201810584597 A CN201810584597 A CN 201810584597A CN 108531877 A CN108531877 A CN 108531877A
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tizrvhf
getter films
matrix
quaternarys
films prepared
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CN108531877B (en
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马永胜
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Institute of High Energy Physics of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target

Abstract

The invention discloses a kind of TiZrVHf quaternarys Fe Getter Films Prepared, including tetra- kinds of elements of Ti, Zr, V, Hf and atom number ratio are (0.9~1.1):(0.9~1.1):(0.9~1.1):(0.9~1.1)；TiZrVHf quaternary Fe Getter Films Prepareds include the compacted zone and prismatic layer grown successively in matrix inner wall of the pipe, and compacted zone is that film surface is smooth, the structure under an electron microscope without apparent crystal grain；Prismatic layer is that film surface is coarse, under an electron microscope the structure with apparent crystal grain, and prismatic layer has large surface area, has larger air-breathing area so that the speed of exhaust of unit matrix pipeline area dramatically increases.The invention belongs to Fe Getter Films Prepared technical field, which can activate at low temperature, have compared with strong adhesive force and long service life, can effectively improve particle accelerator vacuum degree, reduce secondary electron yield.

Description

A kind of TiZrVHf quaternarys Fe Getter Films Prepared and preparation method thereof
Technical field
The invention belongs to Fe Getter Films Prepared technical field, in particular to a kind of TiZrVHf quaternarys Fe Getter Films Prepareds and its system Preparation Method.
Background technology
Gettering material can absorb residual activity gas or device in vacuum device by physically or chemically suction-operated The active gases discharged during use, the end vacuum for improving vacuum system is horizontal, avoid vacuum quality with service life and Decline, play reduce movable part vibration damping, reduce inner cavity heat dissipation, avoid gas reacted with precision element cause to pollute or The effect of mass change achievees the purpose that maintain vacuum equipment or air locking vacuum quality and ideal operation environment.Air-breathing material Material is broadly divided into evaporable (Evaporable Getter) and non-evaporable (Non-evaporable Getter or NEG). The former, which need to evapotranspire and be deposited on vacuum device inner wall, absorbs active gases, it is usually barium, strontium, calcium, magnesium and its alloy, because of it Property of evapotranspiring brings problems to cause to be of limited application；The latter is obtained by physical sputtering method, and heat activation obtains Active surface absorbs active gases, it is usually the metals such as titanium, zirconium, hafnium, yttrium, vanadium and its conjunction that is formed with transition element Block, band, thick film and film can be made in gold, be commonly utilized in ultra-high vacuum system, electric light source, solar energy heating are set In standby, inert gas purification, sputter ion pump, getter pump, flat-panel monitor (OLED/FED/LCD), equipment operation is ensured Reliability, stability and working life.
Getter is to absorb H in vacuum or inert environments2、CO、CO2、H2O、O2Isoreactivity gas it is a kind of important Functional material is widely used in high vacuum system, the microelectronics vacuum device etc. that need to maintain vacuum environment.Due to traditional air-breathing Agent activationary temperature is high, and volume is big, and toxic, cannot meet the requirement in specific area.
The rapid development of high-energy physics, the requirement to particle accelerator vacuum technique are higher and higher：First, high-speed motion Particle needs ultrahigh vacuum (ultra high vacuum) environment；Second, vacuum box tube wall requires have lower secondary electron to send out Penetrate coefficient (second electron yield).Cause conductance too small since particle accelerator vacuum pipe caliber is elongated, and Traditional stainless steel, oxygen-free copper, aluminium inner wall of the pipe secondary electron yield are also higher, therefore cannot meet the need of particle accelerator It asks.The Fe Getter Films Prepared that a layer thickness is 0.1~2 μm is plated in vacuum inside pipe wall, the demand of vacuumizing can be met and reduces pipe The secondary electron yield in road itself.
It after vacuum tube after plated film is installed on particle accelerator, needs at 160~200 DEG C, 20~24 hours online swashs It is living to have pumping speed, and there is lower secondary electron yield.
Therefore, the Fe Getter Films Prepared that a kind of activationary temperature is low and pumping speed is big is urgently studied with preparation method.
Invention content
To solve above-mentioned existing problem, TiZrVHf quaternarys low the present invention provides a kind of activationary temperature and big pumping speed are inhaled Gas agent film and preparation method thereof, the TiZrVHf quaternarys Fe Getter Films Prepared can activate at low temperature, have stronger adhesive force With longer service life, particle accelerator vacuum degree can be effectively improved, and reduce secondary electron yield.
The technical solution adopted by the present invention is as follows：A kind of TiZrVHf quaternarys Fe Getter Films Prepared, including tetra- kinds of Ti, Zr, V, Hf The atom number ratio of element, tetra- kinds of elements of described Ti, Zr, V, Hf is (0.9~1.1):(0.9~1.1):(0.9~1.1): (0.9~1.1)；The TiZrVHf quaternarys Fe Getter Films Prepared includes the compacted zone grown successively in matrix inner wall of the pipe and column Layer, the compacted zone are that film surface is smooth, and the structure under an electron microscope without apparent crystal grain, compacted zone is for preventing matrix Impurity element in pipeline material diffuses into TiZrVHf quaternary Fe Getter Films Prepareds, is formed to TiZrVHf quaternary Fe Getter Films Prepareds Toxic effect and to decline the pumping speed of active gases；The prismatic layer is that film surface is coarse, is had under an electron microscope There are the structure of apparent crystal grain, prismatic layer that there is larger surface area, to have larger air-breathing area so that unit basal body pipe The speed of exhaust of road area dramatically increases.
The invention also discloses a kind of preparation methods of TiZrVHf quaternarys Fe Getter Films Prepared, include the following steps：
1) matrix pipeline is pre-processed；
2) by pretreated matrix pipeline use pulsed magnetron sputtering, 80~100 DEG C of depositing temperature, Kr flows 0.5~ 10sccm, 50~100W of sputtering power, 0.1~1.5Pa of gas pressure intensity, 30~90min of sedimentation time so that shape on matrix pipeline At the compacted zone of tetra- kinds of elements of Ti, Zr, V, Hf；
3) matrix for obtaining step 2) use magnetically controlled DC sputtering, 100~250 DEG C of depositing temperature, Kr flows 0.5~ 10sccm, 50~150W of sputtering power, 0.5~2Pa of gas pressure intensity, 60~900min of sedimentation time so that shape on matrix pipeline At the prismatic layer of tetra- kinds of elements of Ti, Zr, V, Hf.
Further, further include setting target body in preparation method, target body is by 0.5~1.5mm of diameter, purity>99.5% Ti, Zr, V, Hf wire turn to the target body of twisted shape.
Further, the matrix pipeline preprocess method described in step 1) includes the following steps：
1) pickling：20~40min；
2) it rinses：Deionized water rinses 10min；
3) it is dehydrated：Matrix inner wall of the pipe is fully dehydrated with analysis absolute alcohol；
4) it dries：10h dry or 5min dryings naturally；
5) welded flange is stopped leakage in the roof, polishing cloth polishing basal body pipe road inner surface；
6) pickling：20~40min；
7) it rinses：Deionized water rinses 10min, and with deionized water Ultrasonic 10min, temperature control is at 35~80 DEG C；
8) it dries：Ibid；
9) vacuum drying oven degasification：400 DEG C, 4h is kept the temperature, vacuum degree is better than 3.5 × 10-4Pa；Cooled to room temperature, vacuum degree Better than 1.5 × 10-5Pa。
The present invention is obtained and is had the beneficial effect that using the above scheme：TiZrVHf quaternarys Fe Getter Films Prepared activation temperature of the present invention It is big to spend low and pumping speed, can activate at low temperature, there is stronger adhesive force and longer service life, can effectively improve Particle accelerator vacuum degree, and reduce secondary electron yield.TiZrVHf quaternarys Fe Getter Films Prepared of the present invention is mainly used in The fields such as ultrahigh vacuum, electronic component, particle accelerator, solar energy heat collection pipe, for improving electronic component, solar energy collection Vacuum maintains after heat-tube vacuum encapsulation, ensures higher vacuum degree；For improving particle accelerator background vacuum, and reduce The secondary electron yield of vacuum tube wall, to improve the operational efficiency of line.
TiZrVHf quaternarys Fe Getter Films Prepared of the present invention, which is mainly characterized by activationary temperature, can be reduced to 160 DEG C, and international market Existing TiZrV ternarys Fe Getter Films Prepared activationary temperature is 180 DEG C, and activationary temperature declines 11%.Baking swashs particle accelerator online Temperature living effectively reduces so that limit diffraction ring small-bore Magnet design becomes feasible technical solution at present.
TiZrVHf quaternary Fe Getter Films Prepared secondary electron yields can be reduced to 1.2, and the secondary electron less than TiN is sent out Coefficient 1.4 is penetrated, particle accelerator line operational efficiency can be effectively improved.
Figure of description
Fig. 1 is TiZrVHf quaternarys Fe Getter Films Prepared surface microscopic figure of the present invention；
Fig. 2 is TiZrVHf quaternarys Fe Getter Films Prepared section microgram of the present invention.
Specific implementation mode
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common All other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects It encloses.
The present invention is prepared for a kind of TiZrVHf quaternarys Fe Getter Films Prepared using DC magnetron sputtering method, the TiZrVHf tetra- First Fe Getter Films Prepared is made of tetra- kinds of elements of Ti, Zr, V, Hf, and the atom number of four kinds of elements is than being about (0.9~1.1):(0.9 ~1.1):(0.9~1.1):(0.9~1.1).Hf elements effectively reduce the activationary temperature and two of Fe Getter Films Prepared after being added Secondary electron emission coefficiency.Using different technological parameters, successively in the compacted zone and prismatic layer structure of the growth of matrix inner wall of the pipe At.Compacted zone mainly prevents the impurity element in pipeline material from diffusing into TiZrVHf quaternary Fe Getter Films Prepareds, right TiZrVHf quaternary Fe Getter Films Prepareds form toxic effect and to decline the pumping speed of active gases.Prismatic layer has larger Surface area, to have larger air-breathing area so that the speed of exhaust of unit matrix pipeline area dramatically increases.
Compacted zone refers to TiZrVHf quaternary Fe Getter Films Prepared surfacings, under an electron microscope without apparent grain structure. Technological parameter：Using pulsed magnetron sputtering, 80~100 DEG C of depositing temperature, Kr 0.5~10sccm of flow, sputtering power 50~ 100W, 0.1~1.5Pa of gas pressure intensity, 30~90min of sedimentation time；Prismatic layer refers to TiZrVHf quaternary Fe Getter Films Prepareds surface It is coarse, there is apparent grain structure under an electron microscope.Technological parameter：Using magnetically controlled DC sputtering, depositing temperature 100~ 250 DEG C, Kr 0.5~10sccm of flow, 50~150W of sputtering power, 0.5~2Pa of gas pressure intensity, 60~900min of sedimentation time；
Target body：Target body is by 0.5~1.5mm of diameter, purity>99.5% Ti, Zr, V, Hf wire turns to fried dough twist Shape.
Embodiment 1, the preparation method of TiZrVHf quaternarys Fe Getter Films Prepared of the present invention, includes the following steps：
1) matrix pipeline is pre-processed；
2) pretreated matrix pipeline is used into pulsed magnetron sputtering, 90 DEG C of depositing temperature, Kr flow 2sccm, sputtering Power 60W, gas pressure intensity 1Pa, sedimentation time 50min so that the densification of tetra- kinds of elements of Ti, Zr, V, Hf is formed on matrix pipeline Layer；
3) matrix for obtaining step 2) uses magnetically controlled DC sputtering, 150 DEG C of depositing temperature, Kr flow 2sccm to sputter work( Rate 100W, gas pressure intensity 1Pa, sedimentation time 300min so that the column of tetra- kinds of elements of Ti, Zr, V, Hf is formed on matrix pipeline Layer.
Embodiment 2, the preparation method of TiZrVHf quaternarys Fe Getter Films Prepared of the present invention, includes the following steps：
1) matrix pipeline is pre-processed；
2) pretreated matrix pipeline is used into pulsed magnetron sputtering, 85 DEG C of depositing temperature, Kr flow 4sccm, sputtering Power 80W, gas pressure intensity 1.2Pa, sedimentation time 70min so that the cause of tetra- kinds of elements of Ti, Zr, V, Hf is formed on matrix pipeline Close layer；
3) matrix for obtaining step 2) uses magnetically controlled DC sputtering, 200 DEG C of depositing temperature, Kr flow 8sccm to sputter work( Rate 80W, gas pressure intensity 1.5Pa, sedimentation time 600min so that the column of tetra- kinds of elements of Ti, Zr, V, Hf is formed on matrix pipeline Layer.
Example the above is only the implementation of the present invention is not intended to limit the scope of the invention, every to utilize this hair Equivalent structure or equivalent flow shift made by bright description is applied directly or indirectly in other relevant technology necks Domain is included within the scope of the present invention.

Claims (4)

1. a kind of TiZrVHf quaternarys Fe Getter Films Prepared, which is characterized in that including tetra- kinds of elements of Ti, Zr, V, Hf, the Ti, Zr, V, the atom number ratio of tetra- kinds of elements of Hf is (0.9~1.1):(0.9~1.1):(0.9~1.1):(0.9~1.1)；It is described TiZrVHf quaternary Fe Getter Films Prepareds include the compacted zone and prismatic layer grown successively in matrix inner wall of the pipe, and the compacted zone is Film surface is smooth, the structure under an electron microscope without apparent crystal grain, and compacted zone is miscellaneous in matrix pipeline material for preventing Prime element diffuses into TiZrVHf quaternary Fe Getter Films Prepareds, forms toxic effect to TiZrVHf quaternary Fe Getter Films Prepareds and makes The pumping speed of active gases is declined；The prismatic layer is that film surface is coarse, under an electron microscope the knot with apparent crystal grain Structure, prismatic layer have larger surface area, to have larger air-breathing area so that the pumping speed of unit matrix pipeline area Rate dramatically increases.
2. a kind of preparation method of TiZrVHf quaternarys Fe Getter Films Prepared, which is characterized in that include the following steps：
1) matrix pipeline is pre-processed；
2) by pretreated matrix pipeline use pulsed magnetron sputtering, 80~100 DEG C of depositing temperature, Kr flows 0.5~ 10sccm, 50~100W of sputtering power, 0.1~1.5Pa of gas pressure intensity, 30~90min of sedimentation time so that shape on matrix pipeline At the compacted zone of tetra- kinds of elements of Ti, Zr, V, Hf；
3) matrix for obtaining step 2) use magnetically controlled DC sputtering, 100~250 DEG C of depositing temperature, Kr flows 0.5~ 10sccm, 50~150W of sputtering power, 0.5~2Pa of gas pressure intensity, 60~900min of sedimentation time so that shape on matrix pipeline At the prismatic layer of tetra- kinds of elements of Ti, Zr, V, Hf.
3. a kind of preparation method of TiZrVHf quaternarys Fe Getter Films Prepared according to claim 2, which is characterized in that prepare Further include setting target body in method, target body is by 0.5~1.5mm of diameter, purity>99.5% Ti, Zr, V, Hf wire coiling At the target body of twisted shape.
4. a kind of preparation method of TiZrVHf quaternarys Fe Getter Films Prepared according to claim 2, which is characterized in that step 1) the matrix pipeline preprocess method described in includes the following steps：
1) pickling：20~40min；
2) it rinses：Deionized water rinses 10min；
3) it is dehydrated：Matrix inner wall of the pipe is fully dehydrated with analysis absolute alcohol；
4) it dries：10h dry or 5min dryings naturally；
5) welded flange is stopped leakage in the roof, polishing cloth polishing basal body pipe road inner surface；
6) pickling：20~40min；
7) it rinses：Deionized water rinses 10min, and with deionized water Ultrasonic 10min, temperature control is at 35~80 DEG C；
8) it dries：Ibid；
9) vacuum drying oven degasification：400 DEG C, 4h is kept the temperature, vacuum degree is better than 3.5 × 10-4Pa；Cooled to room temperature, vacuum degree are better than 1.5×10-5Pa。
CN201810584597.7A 2018-06-06 2018-06-06 TiZrVHf quaternary getter film Active CN108531877B (en)

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Cited By (11)

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CN109767856A (en) * 2018-12-28 2019-05-17 西安交通大学 A kind of neutron source target system
CN110863183A (en) * 2019-11-29 2020-03-06 中山凯旋真空科技股份有限公司 Getter film with composite structure and preparation method thereof
CN110863228A (en) * 2019-11-29 2020-03-06 中山凯旋真空科技股份有限公司 Titanium dioxide nanotube-based getter film and preparation method thereof
CN111705318A (en) * 2020-05-27 2020-09-25 西安交通大学 Five-element titanium alloy getter based on foam metal substrate
CN112342501A (en) * 2020-09-15 2021-02-09 中国科学院高能物理研究所 Preparation method of Pd/Ti double-layer getter film and Pd/Ti double-layer getter film
CN113428830A (en) * 2021-05-26 2021-09-24 上海晶维材料科技有限公司 Low-activation-temperature high-performance air suction film
CN113699425A (en) * 2021-08-31 2021-11-26 中国科学技术大学 Non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and preparation method thereof
CN113737134A (en) * 2021-09-02 2021-12-03 西安交通大学 Thin film containing nested micro-trap structure and preparation method thereof
CN114182205A (en) * 2021-12-10 2022-03-15 中国工程物理研究院材料研究所 Nano multilayer structure metal hydrogen absorption film and preparation method and application thereof
CN115449690A (en) * 2022-09-20 2022-12-09 浙江安胜科技股份有限公司 High-strength high-air-suction-performance Zr-V system air suction material and preparation method thereof
CN115672254A (en) * 2022-11-17 2023-02-03 北京锦正茂科技有限公司 Activation-free gas adsorbent used in cryostat and preparation method thereof

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Publication number Priority date Publication date Assignee Title
CN109767856A (en) * 2018-12-28 2019-05-17 西安交通大学 A kind of neutron source target system
CN110863183B (en) * 2019-11-29 2022-04-08 中山凯旋真空科技股份有限公司 Getter film with composite structure and preparation method thereof
CN110863183A (en) * 2019-11-29 2020-03-06 中山凯旋真空科技股份有限公司 Getter film with composite structure and preparation method thereof
CN110863228A (en) * 2019-11-29 2020-03-06 中山凯旋真空科技股份有限公司 Titanium dioxide nanotube-based getter film and preparation method thereof
CN110863228B (en) * 2019-11-29 2021-08-10 中山凯旋真空科技股份有限公司 Titanium dioxide nanotube-based getter film and preparation method thereof
CN111705318A (en) * 2020-05-27 2020-09-25 西安交通大学 Five-element titanium alloy getter based on foam metal substrate
CN112342501A (en) * 2020-09-15 2021-02-09 中国科学院高能物理研究所 Preparation method of Pd/Ti double-layer getter film and Pd/Ti double-layer getter film
CN113428830A (en) * 2021-05-26 2021-09-24 上海晶维材料科技有限公司 Low-activation-temperature high-performance air suction film
CN113699425A (en) * 2021-08-31 2021-11-26 中国科学技术大学 Non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and preparation method thereof
CN113699425B (en) * 2021-08-31 2022-07-15 中国科学技术大学 Non-evaporable quaternary Ti-Zr-V-Cu vacuum getter film and preparation method thereof
CN113737134A (en) * 2021-09-02 2021-12-03 西安交通大学 Thin film containing nested micro-trap structure and preparation method thereof
CN114182205A (en) * 2021-12-10 2022-03-15 中国工程物理研究院材料研究所 Nano multilayer structure metal hydrogen absorption film and preparation method and application thereof
CN115449690A (en) * 2022-09-20 2022-12-09 浙江安胜科技股份有限公司 High-strength high-air-suction-performance Zr-V system air suction material and preparation method thereof
CN115672254A (en) * 2022-11-17 2023-02-03 北京锦正茂科技有限公司 Activation-free gas adsorbent used in cryostat and preparation method thereof

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