CN108521075B - 一种基于蓝光InGaN量子阱的绿光发射激光器 - Google Patents

一种基于蓝光InGaN量子阱的绿光发射激光器 Download PDF

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CN108521075B
CN108521075B CN201810315250.2A CN201810315250A CN108521075B CN 108521075 B CN108521075 B CN 108521075B CN 201810315250 A CN201810315250 A CN 201810315250A CN 108521075 B CN108521075 B CN 108521075B
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quantum well
blue light
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bragg reflector
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CN108521075A (zh
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张保平
许荣彬
梅洋
徐欢
应磊莹
郑志威
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Xiamen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

一种基于蓝光InGaN量子阱的绿光发射激光器，涉及绿光发射激光器。从下至上包括铜衬底、下分布布拉格反射镜、p型Cr/Au电极、ITO透明导电层、SiO2电流限制层、GaN基外延层、n型Cr/Au电极和上分布布拉格反射镜；所述GaN基外延层包括P型GaN、N型GaN和蓝光InGaN/GaN量子阱；所述上分布布拉格反射镜和下分布布拉格反射镜高反带需覆盖整个增益谱范围，反射率达到99％及以上，材料组合采用TiO2/SiO2、Ta2O5/SiO2或Ti3O5/SiO2。所述蓝光InGaN/GaN量子阱中，势阱InXGa1‑XN层InN含量x在0.16～0.22之间，势垒为GaN层。

Description

一种基于蓝光InGaN量子阱的绿光发射激光器
技术领域
本发明涉及绿光发射激光器，尤其是涉及一种基于蓝光InGaN量子阱的绿光发射激光器。
背景技术
二维的InGaN量子阱材料被广泛的运用于半导体激光器，通过调整InGaN量子阱中的In组份，发光范围可以覆盖从紫光到近红外波段。基于这种优势，一系列不同发光波长的半导体激光器被成功研发并实现了商业化。
为了获得绿光或者更长波长的激光器，就需要量子阱有更高的In组分，然而获得高质量的高In组分InGaN量子阱相比低In组份困难很多。高In组份InGaN量子阱常常伴随着较高的缺陷密度和较大的极化电场([1]H.Ohta,S.P.Denbaars,and S.Nakamura,Futureof group-III nitride semiconductor green laser diodes,J.Opt.Soc.Am.B,27(11):B45-B49(2010))。这些问题会导致材料内量子效率的降低和器件较大的阈值电流。目前为了克服这些困难，在材料生长时常采用非极性或半极性的GaN衬底([2]H.Ohta andK.Okamoto,Nonpolar/semipolar GaN technology for violet,blue,and green laserdiodes,MRS Bull.34:324–327(2009))，但是由于GaN衬底材料价格昂贵，难以得到实际应用。绿色激光作为激光光源的三基色之一在全色投影及激光打印等方面扮演者举足轻重的角色，因此获得高性能的绿光激光器是半导体激光器的重要方向。
发明内容
本发明的目的在于针对上述现有技术中存在的问题，提供一种基于蓝光InGaN量子阱的绿光发射激光器。
本发明从下至上包括铜衬底、下分布布拉格反射镜、p型Cr/Au电极、ITO透明导电层、SiO2电流限制层、GaN基外延层、n型Cr/Au电极和上分布布拉格反射镜；所述GaN基外延层包括P型GaN、N型GaN和蓝光InGaN/GaN量子阱；所述上分布布拉格反射镜和下分布布拉格反射镜高反带需覆盖整个增益谱范围，反射率达到99％及以上，材料组合采用TiO2/SiO2、Ta2O5/SiO2或Ti3O5/SiO2。
所述蓝光InGaN/GaN量子阱中，势阱InXGa1-XN层InN含量x在0.16～0.22之间，势垒为GaN层；
所述P型GaN的厚度需满足绿光波长处的强耦合条件，P型GaN厚度需满足：
其中，k＝1，3，5，7……λ为绿光波长。
本发明的有益效果为：本发明通过控制生长P型GaN层的厚度，使绿光部分的腔模与光场实现强耦合。利用上下介质膜DBR构成微型谐振腔，获得了基于蓝光量子阱的绿光发射激光器。相比以往获得基于InGaN量子阱材料的绿光发射激光器(In含量x在0.24-0.3)，本发明有效的避免了生长高In组份量子阱材料存在的困难，可广泛应用于半导体绿色激光的获取。
附图说明
图1为本发明实施例的剖面示意图。
图2为本发明实施例在小于阈值电流(25mA)下发光光谱图。
图3为本发明实施例在大于阈值电流(45mA)下发光光谱图。
具体实施方式
以下实施例将结合附图对本发明作进一步的说明。
参见图1，本发明实施例从下至上依次为铜衬底1、下分布布拉格反射镜2、p型Cr/Au电极3、ITO透明导电层4、SiO2电流限制层5、GaN基外延层6、n型Cr/Au电极7和上分布布拉格反射镜8。所述GaN基外延层6包括P型GaN、N型GaN和蓝光InGaN/GaN量子阱。其中，InGaN/GaN量子阱中In组份为0.18，InGaN/GaN量子阱的光学厚度为58nm，p型GaN的光学厚度为1793nm。ITO层光学厚度为54nm。
图2所示为器件在小于阈值电流(25mA)下发光光谱，谐振模式覆盖整个增益谱。
图3所示为器件在大于阈值电流(45mA)下发光光谱，493nm的绿光强耦合模式占据主导，实现绿光激射。
本发明使用蓝光InGaN量子阱有源区，结合谐振腔效应，配合较长的腔长可以使多个谐振模式覆盖整个增益谱。材料生长过程中通过严格控制P型GaN层的厚度，使绿光部分的腔模与光场实现强耦合，最终实现基于蓝光量子阱的绿光发射激光器。相比于传统的GaN基半导体激光器，本发明可以有效避免高In组份量子阱存在的较高缺陷密度和较大极化电场，能够有效提高器件性能，在绿色激光的获取上有着显著的优势。同时在全色投影及激光打印等领域中有广泛的运用前景。

Claims (2)

1.一种基于蓝光InGaN量子阱的绿光发射激光器，其特征在于其从下至上包括铜衬底、下分布布拉格反射镜、p型Cr/Au电极、ITO透明导电层、SiO2电流限制层、GaN基外延层、n型Cr/Au电极和上分布布拉格反射镜；所述GaN基外延层包括P型GaN、N型GaN和蓝光InGaN/GaN量子阱；所述上分布布拉格反射镜和下分布布拉格反射镜高反带需覆盖整个增益谱范围，反射率达到99％及以上，材料组合采用TiO2/SiO2、Ta2O5/SiO2或Ti3O5/SiO2；
所述蓝光InGaN/GaN量子阱中，势阱InXGa1-XN层InN含量x在0.16～0.22之间，势垒为GaN层。
2.如权利要求1所述一种基于蓝光InGaN量子阱的绿光发射激光器，其特征在于所述P型GaN的厚度需满足绿光波长处的强耦合条件，P型GaN厚度需满足：
其中，k＝1，3，5，7……λ为绿光波长。
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US9590392B1 (en) * 2011-10-13 2017-03-07 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
CN106785909A (zh) * 2017-02-04 2017-05-31 厦门大学 用于全色显示照明的垂直腔面发射激光器阵列

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9590392B1 (en) * 2011-10-13 2017-03-07 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
CN106785909A (zh) * 2017-02-04 2017-05-31 厦门大学 用于全色显示照明的垂直腔面发射激光器阵列

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Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at room Temperature;Daiji Kasahara et al.;《Applied Physics Express》;20110731;第4卷(第7期);第1页第2段-第2页第2段，附图1-3

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