CN108520904B - GaAs-based two-color quantum well infrared detector based on resonance tunneling effect - Google Patents
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
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Abstract
The invention discloses a GaAs-based bicolor quantum well infrared detector based on resonance tunneling effect, which is prepared by sequentially growing a lower electrode layer, an active region layer and an upper electrode layer on a GaAs substrate by a molecular beam epitaxy means. The active region layer is sandwiched between two different quantum wells for a resonant tunneling diode structure. When the detector is biased with a specific positive or negative bias, the two-band photocurrents generated by the different well-width quantum well responses will selectively form a response loop through the resonant tunneling diode. Compared with the traditional double-color quantum well detector, the double-color quantum well detector can realize double-color detection by adjusting the direction and the size of the applied bias voltage, and can improve the working temperature of a device. In addition, the preparation process of the device is simplified, and has great significance in promoting the development of the bicolor infrared quantum well detector.
Description
Technical Field
The invention relates to a GaAs-based quantum well infrared detector, in particular to a GaAs-based bicolor quantum well infrared detector based on resonance tunneling effect.
Background
The quantum well infrared detector is an important component of an infrared focal plane thermal imaging system, and particularly the GaAs-based quantum well infrared detector is mature due to the growth of materials and the preparation process, is easy to integrate in a large area array and has good uniformity and stability, and becomes a research hot spot in the field of infrared detectors in recent years. However, with the continuous development of semiconductor technology, monochromatic infrared detectors have not met the requirements of higher integration and more functions, so the development of dual-band and even multi-band window detectors has been developed. Compared with a single-band thermal imaging system, the thermal imaging system based on the double-color quantum well detector can detect more target information, and has higher detection rate and lower false alarm rate.
The response wavelength design of the quantum well infrared detector can be realized by changing the barrier height and the quantum well width of the material through quantum cutting, and the interconversion of photons and electrons is realized by utilizing intersubband transition. By utilizing the wavelength controllability of the quantum well infrared detector, the two-color quantum well infrared detector can be realized by designing two different quantum well structures in the same detector to respectively detect light in two different wavebands. The currently widely used GaAs-based bicolor quantum well infrared detector mainly adopts an MBE method to sequentially grow three electrode layers on a GaAs substrate material for respectively biasing and controlling the detection of two wavebands. See references Costard, eric, et al, "Two color QWIP and extended wavebands," Infrared Technology and Applications xxxiii.vol.6542.International Society for Optics and Photonics,2007. The two-color quantum well detector fabrication process is more difficult to grow as compared to the materials of conventional single-color quantum well detectors, the device fabrication process is more complex, three electrodes need to be etched multiple times to form a three-terminal device, and the three-terminal device is not compatible with the standard focal plane fabrication process, so that the infrared focal plane readout circuit based on the two-color quantum well detector is more complex. The GaAs-based double-color quantum well detector based on the resonance tunneling effect has a simple structure, is similar to a traditional monochromatic quantum well infrared detector, is a device at two ends, and can realize double-band detection by only adding different bias voltages to the upper electrode layer and the lower electrode layer to conduct the resonance tunneling structure. Therefore, the device manufacturing process is also indistinct from the conventional monochromatic quantum well, and compatibility with the focal plane process can be achieved. The invention has wider application in the simplification of structure and process, and has great significance for promoting the development of the bicolor infrared quantum well detector.
Disclosure of Invention
The invention aims to provide a GaAs-based bicolor quantum well infrared detector which can simplify the material structure and the device preparation process.
The design scheme of the invention is as follows:
the basic unit of the GaAs-based bicolor quantum well infrared detector based on the resonance tunneling effect comprises a substrate 1, a lower electrode 2, a first quantum well region 3, a resonance tunneling region 4, a second quantum well region 5, an upper electrode 6 and a metal electrode 7, and is characterized in that:
the GaAs-based bicolor quantum well infrared detector structure based on the resonance tunneling effect comprises: growing a lower electrode layer (2) on a substrate (1), then growing a first quantum well region (3), continuously growing a resonance tunneling region (4) on the first quantum well region (3), regrowing a second quantum well region (5), finally growing an upper electrode layer (6), and respectively growing metal electrodes (7) on the lower electrode layer (2) and the upper electrode layer (6); the first quantum well region 3 and the second quantum well region 5 respectively represent two wave band active regions detected by the quantum well detector;
the substrate 1 is a GaAs substrate;
the upper and lower electrode layers 2, 6 are Si heavily doped GaAs with doping concentration of 1×10 17 -1×10 18 cm -3 ；
The metal electrode 7 is made of composite metal, auGe is arranged on one side close to the electrode layer, and Ni and Au are sequentially arranged;
the first quantum well region 3 is a long-wave single quantum well, wherein the barrier layer is Al with the thickness of 40-70nm x Ga 1- x An As layer having an Al component x of 0.12-0.27 and a well of 5.2-8nm Si-doped GaAs layer having a doping concentration of 1X 10 17 -1×10 18 cm -3 ；
The second quantum well region 5 is a medium wave single quantum well, wherein the barrier layer is Al with the thickness of 30-60nm x Ga 1- x An As layer with an Al component x of 0.2-0.4 and a well of2.5-4nm Si doped In x Ga 1-x An As layer having an In component x of 0.1 to 0.25 and a doping concentration of 1X 10 17 -8×10 17 cm -3 ；
The resonance tunneling region (4) is a layer of Al x Ga 1-x The As material is sandwiched between two layers of AlAs material with equal thickness, wherein the barrier AlAs has a thickness of 2-4nm, and the potential well is undoped Al x Ga 1-x As material with thickness of 3-6nm and component x of 0.05-0.25;
potential well Al in the resonance tunneling region 4 x Ga 1-x As, al composition of which is smaller than potential barrier Al in the first quantum well region 3 and the second quantum well region 5 x Ga 1-x Al component of As.
The invention has the following positive effects and advantages:
1. the device adopts the resonance tunneling structure to isolate the quantum well regions with two different response wave bands, can realize detection with different wave bands by different directions of the applied bias voltage, and has the advantages of simplifying material growth and external reading circuit compared with the conventional double-color quantum well infrared detector.
2. The potential barrier of the resonance tunneling structure is far higher than that of the quantum well region, and the structure can greatly block dark current distributed in a broadband while ensuring that the tunneling of photocurrent signals is hardly influenced, thereby being beneficial to reducing the dark current of a device and improving the working temperature of the device.
Drawings
The schematic diagram of the invention is as follows:
FIG. 1 is a schematic diagram of a GaAs-based two-color quantum well infrared detector unit based on resonance tunneling effect;
FIG. 2 is a schematic diagram of a conduction band bottom structure of a GaAs-based bicolor quantum well detector under forward working bias based on resonance tunneling effect;
FIG. 3 is a schematic diagram of a conduction band bottom structure of a GaAs-based bicolor quantum well detector under reverse working bias based on resonance tunneling effect;
wherein, (1) a GaAs substrate, (2) a lower electrode, (3) a first quantum well region, (4) a resonance tunneling region, (5) a second quantum well region, (6) an upper electrode, and (7) a metal electrode.
Detailed Description
The following describes the principle of photoelectric response of the dual-color quantum well detector in detail with reference to the accompanying drawings: referring to fig. 2, after a forward bias voltage is applied to a conduction band bottom structure diagram of a dual-color quantum well detector based on a resonance tunneling effect, the relative positions of a first excited state energy level of a first quantum well region 3 and a ground state energy level of a resonance tunneling region 4 are adjusted through the bias voltage, when the applied bias voltage reaches a condition capable of realizing resonance tunneling, electrons in a ground state in a doped quantum well of the first quantum well region are excited to an excited state under irradiation of infrared light, and electrons in the excited state tunnel through the resonance tunneling region 4 under the action of the forward working bias voltage to form photocurrent corresponding to a first band response of neutron band transition energy of the first quantum well. When the first excited state of the second quantum well region 5 and the ground state energy level of the resonance tunneling region 4 are adjusted by bias voltage after reverse bias voltage is applied, and the applied reverse working bias voltage realizes the resonance tunneling condition, as shown in fig. 3, photocurrent corresponding to the second band response of the neutron band transition energy of the second quantum well is formed, thereby realizing the response wavelength detection of the second quantum well region. When the detector is biased to resonance tunneling, the transmission of photocurrent is substantially unaffected, see the solid line in fig. 3, while dark current in the broad band distribution is substantially suppressed, see the dashed line in fig. 3. The invention thus has the advantage of increasing the operating temperature of the device.
1. Preparation of GaAs-based two-color quantum well infrared detector based on resonance tunneling effect
The preparation process of the double-color quantum well detector comprises the following steps: material growth, cleaning, mesa lithography, mesa etching, electrode lithography, evaporating electrodes, thermal annealing and packaging.
First embodiment:
1.1 growth of GaAs-based two-color quantum well material based on resonance tunneling effect with two-color detection peak positions of 3 μm and 8 μm:
a buffer layer GaAs is firstly grown on a GaAs substrate (1) by adopting a Molecular Beam Epitaxy (MBE) technology, a lower electrode layer (2) GaAs is regrown, si is Si, and the doped Si concentration is 10 17 /cm 3 And the thickness of the first quantum well region is 0.6 mu m, and the first quantum well region (3) is continuously grown on the lower electrode layer (2), and the structure is as follows: potential barrier Al 0.27 Ga 0.73 As thickness 40nm, potential well QW 1 The thickness is 5.2nm; QW (QW) 1 Is GaAs: si with doping concentration of 10 17 /cm 3 . Regrowth resonant tunneling region (4), the partial growth sequence being: firstly, growing an AlAs barrier layer with the thickness of 2nm, and regrowing a tunneling potential well Al with the thickness of 3nm 0.25 Ga 0.75 As, finally, growing a 2nm AlAs barrier layer. And continuing to grow a second quantum well region (5) after the resonance tunneling region (4), wherein the structure is as follows: quantum well QW 2 Si doped In at 2.5nm 0.25 Ga 0.75 As, doping concentration of 10 17 /cm 3 The potential barrier is 30nm of Al 0.4 Ga 0.6 As. Finally, a Si doped GaAs upper electrode layer (6) with the thickness of 0.4 mu m is grown, and the doping concentration is 10 17 /cm 3 。
The first excited state energy level in the first quantum well region (3) and the second quantum well region (5) is lower than the ground state energy level in the well of the resonance tunneling region (4), because a large potential difference cannot be formed in the heavily doped quantum well, and the bias voltage basically acts on the resonance tunneling region (4), so that the ground state energy level in the well of the resonance tunneling region (4) can be adjusted by biasing. When the first excited state in the first quantum well region (3) or the second quantum well region (5) resonates with the ground state energy level in the resonance tunneling region (4) under the corresponding bias voltage, a loop of a photocurrent signal can be formed.
1.2 preparation of mesa and Metal electrode
The table top is prepared by adopting the most common wet etching method, and the selected etching solution has unobvious requirements and the etching rate is easy to control due to the limitations of the selected materials and the technological effects. The corrosive liquid is H 2 O:H 2 O 2 :H 3 PO 4 The ratio is 1:1:25, and the corrosion rate is about 0.2um/min for GaAs system materials at 25 ℃. In the process of etching the mesa, care should be taken that the etching depth should be just enough to the lower electrode layer, and neither overetching nor underetching should be performed. The metal electrode (6) is formed on the highly doped GaAs electrode layerThe contacted electrodes were grown sequentially with AuGe of 100nm thickness, ni of 20nm and Au material of 400nm thickness by electron beam evaporation, respectively. And (3) after photoetching and coating, adopting a stripping process to prepare the coating. And finally, forming ohmic contact through a rapid thermal annealing process.
Specific embodiment II:
1.1 growth of GaAs-based two-color quantum well material based on resonance tunneling effect with two-color detection peak positions of 5 μm and 15 μm:
a buffer layer GaAs is firstly grown on a GaAs substrate (1) by adopting a Molecular Beam Epitaxy (MBE) technology, and a lower electrode layer (2) GaAs is grown again: si doped with Si having a concentration of 5X 10 17 cm -3 And the thickness of the first quantum well region is 0.6 mu m, and the first quantum well region (3) is continuously grown on the lower electrode layer (2), and the structure is as follows: potential barrier Al 0.12 Ga 0.88 As thickness 70nm, potential well QW 1 The thickness is 8nm; QW (QW) 1 Is GaAs: si with doping concentration of 4×10 17 cm -3 . Regrowth resonant tunneling region (4), the partial growth sequence being: firstly, growing an AlAs barrier layer with the thickness of 4nm, and regrowing a tunneling potential well Al with the thickness of 6nm 0.05 Ga 0.95 As, finally, a 4nm AlAs barrier layer is grown. And continuing to grow a second quantum well region (5) after the resonance tunneling region (4), wherein the structure is as follows: quantum well QW 2 Si doped In of 4nm 0.1 Ga 0.9 As, doping concentration of 4×10 17 cm -3 The potential barrier is 60nm of Al 0.2 Ga 0.8 As. Finally, a Si doped GaAs upper electrode layer (6) with the thickness of 0.4 mu m is grown, and the doping concentration is 5 multiplied by 10 17 cm -3 。
The first excited state energy level in the first quantum well region (3) and the second quantum well region (5) is lower than the ground state energy level in the well of the resonance tunneling region (4), because a large potential difference cannot be formed in the heavily doped quantum well, and the bias voltage basically acts on the resonance tunneling region (4), so that the ground state energy level in the well of the resonance tunneling region (4) can be adjusted only by the bias voltage. When the first excited state in the first quantum well region (3) or the second quantum well region (5) resonates with the ground state energy level in the resonance tunneling region (4) under the corresponding bias voltage, a loop of a photocurrent signal can be formed.
1.2 preparation of mesa and Metal electrode
The table top is prepared by adopting the most common wet etching method, and the selected etching solution has unobvious requirement on each anisotropy and the etching rate is easy to control due to the limitations of the selected materials and the technological effect. The corrosive liquid is H 2 O:H 2 O 2 :H 3 PO 4 The ratio is 1:1:25, and the corrosion rate is about 0.2um/min for GaAs system materials at 25 ℃. In the process of etching the mesa, care should be taken that the etching depth should be just enough to the lower electrode layer, and neither overetching nor underetching should be performed. The metal electrode (6) is an electrode for making ohmic contact on the highly doped GaAs electrode layer, and AuGe with the thickness of 100nm, ni with the thickness of 20nm and Au material with the thickness of 400nm are sequentially grown by electron beam evaporation respectively. And (3) after photoetching and coating, adopting a stripping process to prepare the coating. And finally, forming ohmic contact through a rapid thermal annealing process.
Third embodiment:
1.1 growth of GaAs-based two-color quantum well material based on resonance tunneling effect with two-color detection peak positions of 4 μm and 10.5 μm:
a buffer layer GaAs is firstly grown on a GaAs substrate (1) by adopting a Molecular Beam Epitaxy (MBE) technology, a lower electrode layer (2) GaAs is regrown, si is Si, and the doped Si concentration is 1 multiplied by 10 18 cm -3 And the thickness of the first quantum well region is 0.6 mu m, and the first quantum well region (3) is continuously grown on the lower electrode layer (2), and the structure is as follows: potential barrier Al 0.17 Ga 0.83 As thickness is 55nm, potential well QW 1 The thickness is 6nm; QW (QW) 1 Is GaAs, si, with a doping concentration of 8×10 17 cm -3 . Regrowth resonant tunneling region (4), the partial growth sequence being: firstly, growing an AlAs barrier layer with the thickness of 3nm, and regrowing a tunneling potential well Al with the thickness of 4.5nm 0.15 Ga 0.85 As, finally, a 3nm AlAs barrier layer is grown. And continuing to grow a second quantum well region (5) after the resonance tunneling region (4), wherein the structure is as follows: quantum well QW 2 Si doped In 3.5nm 0.2 Ga 0.8 As, doping concentration of 8×10 17 cm -3 Al with potential barrier of 45nm 0.3 Ga 0.7 As. Finally, growing Si doped GaAs upper electrode layer with thickness of 0.4 mu m(6) The doping concentration is 1 multiplied by 10 18 cm -3 。
The first excited state energy level in the first quantum well region (3) and the second quantum well region (5) is lower than the ground state energy level in the well of the resonance tunneling region (4), because a large potential difference cannot be formed in the heavily doped quantum well, and the bias voltage basically acts on the resonance tunneling region (4), so that the ground state energy level in the well of the resonance tunneling region (4) can be adjusted by biasing. When the first excited state in the first quantum well region (3) or the second quantum well region (5) resonates with the ground state energy level in the resonance tunneling region (4) under the corresponding bias voltage, a loop of a photocurrent signal can be formed.
1.2 preparation of mesa and Metal electrode
The table top is prepared by adopting the most common wet etching method, and the selected etching solution has unobvious requirement on each anisotropy and the etching rate is easy to control due to the limitations of the selected materials and the technological effect. The corrosive liquid is H 2 O:H 2 O 2 :H 3 PO 4 The ratio is 1:1:25, and the corrosion rate is about 0.2um/min for GaAs system materials at 25 ℃. In the process of etching the mesa, care should be taken that the etching depth should be just enough to the lower electrode layer, and neither overetching nor underetching should be performed. The metal electrode (6) is an electrode for making ohmic contact on the highly doped GaAs electrode layer, and AuGe with the thickness of 100nm, ni with the thickness of 20nm and Au material with the thickness of 400nm are sequentially grown by electron beam evaporation respectively. And (3) after photoetching and coating, adopting a stripping process to prepare the coating. And finally, forming ohmic contact through a rapid thermal annealing process.
2. The working process of the device comprises the following steps:
and placing the packaged GaAs-based bicolor quantum well infrared detector in a variable temperature liquid nitrogen Dewar bottle with an infrared optical window. The bias voltage applied to the detector is regulated to form good resonance tunneling condition, then infrared light is irradiated on the photosensitive element of the detector through the infrared window by adopting a 45-degree oblique incidence mode, and at the moment, the polarized electric field and the quantum well QW in the direction perpendicular to the growth direction of the incident light are generated due to the fact that the incident light is perpendicular to the material 1 Electrons in the mid-ground state interact to excite electrons to transition to the first excited state, and when the applied bias is forward biased,after the first excitation energy state and the ground state energy level of the resonance tunneling region form a resonance condition, photoelectron tunneling passes through the resonance tunneling region to form a photocurrent loop, so that detection of the corresponding peak position of the first quantum well region is realized. Similarly, when the applied bias voltage is negative bias voltage, after the first excitation energy state of the second quantum well region and the ground energy level of the resonance tunneling region form resonance conditions, the optical signal generated by the second quantum well region also forms a photocurrent loop, so as to realize peak position detection of the second quantum well. The process is the working principle of the bicolor quantum well infrared detector based on the resonance tunneling effect. Compared with a conventional double-color quantum well detector, the structure adopts a resonance tunneling mode to realize double-color detection, simplifies the material growth process and the device preparation process, and improves the working temperature of the double-color quantum well detector.
Claims (2)
1. The utility model provides a GaAs-based bicolor quantum well infrared detector based on resonance tunneling effect, includes substrate (1), bottom electrode layer (2), first quantum well region (3), resonance tunneling region (4), second quantum well region (5), top electrode layer (6), metal electrode (7), its characterized in that:
the structure of the bicolor quantum well infrared detector is as follows: a lower electrode layer (2), a first quantum well region (3), a resonance tunneling region (4), a second quantum well region (5) and an upper electrode layer (6) are sequentially arranged on a substrate (1), and metal electrodes (7) are respectively arranged on the lower electrode layer (2) and the upper electrode layer (6);
the substrate (1) is a GaAs substrate;
the upper and lower electrode layers (2, 6) are Si heavily doped GaAs layers with doping concentration of 1×10 17 -1×10 18 cm -3 ；
The metal electrode (7) is a composite metal electrode, auGe is arranged on one side close to the electrode layer, and then Ni and Au materials are sequentially arranged;
the first quantum well region (3) is a long-wave single quantum well, wherein the barrier layer is Al with the thickness of 40-70nm x Ga 1-x An As layer having an Al component x of 0.12-0.27 and a well of 5.2-8nm Si-doped GaAs layer having a doping concentration of 1X 10 17 -8×10 17 cm -3 ；
The resonance tunneling region (4) is a layer of Al x Ga 1-x As is sandwiched between two AlAs layers with equal thickness, wherein the barrier AlAs layer has a thickness of 2-4nm, and the potential well is undoped Al x Ga 1-x An As material layer with a thickness of 3-6nm and a composition x of 0.05-0.25;
the second quantum well region (5) is a medium wave single quantum well, wherein the barrier layer is Al with the thickness of 30-60nm x Ga 1-x An As layer with Al component x of 0.2-0.4 and well of 2.5-4nm Si doped In x Ga 1-x An As layer having an In component x of 0.1 to 0.25 and a doping concentration of 1X 10 17 -8×10 17 cm -3 。
2. The GaAs-based two-color quantum well infrared detector based on resonance tunneling effect as set forth in claim 1, wherein: potential well Al in the resonance tunneling region (4) x Ga 1-x As, al composition of which is smaller than potential barrier Al in the first quantum well region (3) and the second quantum well region (5) x Ga 1-x Al component of As.
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| CN201810598277.7A CN108520904B (en) | 2018-06-12 | 2018-06-12 | GaAs-based two-color quantum well infrared detector based on resonance tunneling effect |
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| CN201810598277.7A CN108520904B (en) | 2018-06-12 | 2018-06-12 | GaAs-based two-color quantum well infrared detector based on resonance tunneling effect |
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