CN101866932A - Voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector and manufacturing method thereof - Google Patents
Voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector and manufacturing method thereof Download PDFInfo
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- CN101866932A CN101866932A CN200910081984A CN200910081984A CN101866932A CN 101866932 A CN101866932 A CN 101866932A CN 200910081984 A CN200910081984 A CN 200910081984A CN 200910081984 A CN200910081984 A CN 200910081984A CN 101866932 A CN101866932 A CN 101866932A
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Abstract
The invention discloses a voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector, comprising a semi-insulating semiconductor GaAs substrate, a first semiconductor GaAs contact layer, a first multi-quantum well infrared detector, a second semiconductor GaAs contact layer, a second multi-quantum well infrared detector, a third semiconductor GaAs contact layer, an upper contact electrode and a lower contact electrode. The first semiconductor GaAs contact layer is prpared on the semi-insulating semiconductor GaAs substrate; the first multi-quantum well infrared detector is arranged on the first semiconductor GaAs contact layer and is provided with a table top at one side of the first semiconductor GaAs contact layer; the second semiconductor GaAs contact layer is prepared on the first multi-quantum well infrared detector; the second multi-quantum well infrared detector is prepared on the second semiconductor GaAs contact layer; the third semiconductor GaAs contact layer is prepared on the second multi-quantum well infrared detector; the upper contact electrode and the lower contact electrode are respectively prepared on the table top which is formed by the third semiconductor GaAs contact layer and the first semiconductor GaAs contact layer.
Description
Technical field
The present invention relates to semiconductor material growing and element manufacturing field, be meant the structural design of long wave two-color quantum well infrared detector in a kind of voltage modulated type especially, material growth and device manufacture method.
Background technology
Infrared acquisition is a kind of in communication, remote sensing, investigation, the technology of field extensive uses such as early warning.Double-colored detection can respond the infrared radiation information of target at two different-wavebands simultaneously, help enlarging investigative range, improve the sensitivity of surveying, improve the antijamming capability and the identification camouflage of infrared system, the ability of getting rid of false target is so just becoming new technological development direction.
III-V family material quantum trap infrared detector, because it is than the HgCdTe Infrared Detectors, material growing technology and device making technics maturation are arranged, the material homogeneity of large scale growth is good, cost is low, and advantage such as wavelength regulation is convenient, so come into one's own, particularly in making big face battle array, aspect the long wave double-color detector, develop very rapid.
Double-colored in order to make, so the polychrome quantum trap infrared detector, and people proposed various methods for designing.The most successful is the method for three endlap layer structure devices, is about to two different quantum trap infrared detectors of investigative range and is grown in together, and contact by conductive layer, and the method that reads of extraction electrode has respectively realized the detection to different ripples then.But this method needs three layers of etchings, and each pixel all will draw three electrodes, its device making technics, and when particularly making big battle array device of polychrome, complexity is big, thereby makes cost increase substantially.
In the present invention, we are by the quantum trap infrared detector (AlGaAs/GaAs with different materials system, AlGaAs/GaAs/InGaAs) be together in series through conductive layer, and by optimal design to the material growth course, their dynamic conductivity under different bias voltages are had nothing in common with each other, and then the voltage difference of distributing, therefore two detectors are in optimized operating state respectively under different bias voltages, thereby realize the detection to infrared information in 3-5 micron and two atmospheric window scopes of 8-12 micron respectively.And the device (being to draw two electrodes on each pixel) that adopts two-end structure makes the making of device, and when especially making face battle array device, its technology is greatly simplified, and cost reduces.
Summary of the invention
The object of the invention provides the designs and the manufacture method of long wave two-color quantum well infrared detector in a kind of voltage modulated type.By adopting simple two terminal device structure, both avoided the complexity of three end structure manufacture crafts, greatly reduce the cost of manufacture of quantum trap infrared detector, can make it be operated in different infrared bands by the size of modulation applying bias voltage simultaneously.The method of the invention is applicable to present various growth technology, mainly comprises MBE etc.
The invention provides long wave two-color quantum well infrared detector in a kind of voltage modulated type, comprising:
One semi insulating semiconductor GaAs substrate is as the supporting body of entire device;
One first semiconductor GaAs contact layer is produced on the semi insulating semiconductor GaAs substrate, and wherein Doped n-type impurity plays the effect of stress between buffering substrate and other layer, has served as the following contact layer of device again, is used for connecting external bias voltage, conduction current;
One first multiple quantum well infrared detector, be produced on the first semiconductor GaAs contact layer, Doped n-type impurity in its quantum well, be used to survey the infrared radiation that is positioned at the long wave atmospheric window, the area of this first multiple quantum well infrared detector is less than the area of the first semiconductor GaAs contact layer, and being positioned at the first semiconductor GaAs contact layer, one side, the opposite side of this first semiconductor GaAs contact layer is formed with a table top;
One second semiconductor GaAs contact layer is produced on first multiple quantum well infrared detector, and wherein Doped n-type impurity plays two effects that detector is together in series on electricity up and down;
One second multiple quantum well infrared detector is produced on the second semiconductor GaAs contact layer, and Doped n-type impurity in its quantum well is used to survey the infrared radiation that is positioned at the medium wave atmospheric window;
One the 3rd semiconductor GaAs contact layer is produced on second multiple quantum well infrared detector, and wherein Doped n-type impurity plays the effect of protection entire device, and as last contact layer, is used for connecting external bias voltage, conduction current;
Contact electrode and following contact electrode on one are produced on the table top that the contact of the 3rd semiconductor GaAs is gone up and the first semiconductor GaAs contact layer forms.
Wherein the bed thickness of first, second and the 3rd semiconductor GaAs contact layer is the 300-700 nanometer.
First and second multiple quantum well infrared detectors wherein, it is inner separately to be made of a plurality of identical repetitives.
Wherein each repetitive of this first multiple quantum well infrared detector comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics;
One GaAs quantum well layer is produced on an Al
XGa
1-XOn the As barrier layer, wherein Doped n-type impurity provides charge carrier;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the GaAs quantum well layer, is used for limiting electronics.
Wherein each repetitive of this second multiple quantum well infrared detector comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics;
One the one GaAs layer is produced on an Al
XGa
1-XOn the As barrier layer, improve the interface quality of quantum well;
One In
XGa
1-XThe As quantum well layer is produced on the GaAs layer, and wherein Doped n-type impurity provides charge carrier;
One the 2nd GaAs layer is produced on the InXGa1-XAs quantum well layer, improves the interface quality of quantum well;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the 2nd GaAs layer, is used for limiting electronics;
The invention provides the manufacture method of long wave two-color quantum well infrared detector in a kind of voltage modulated type, it is characterized in that, comprise the steps:
Step 1: with semi insulating semiconductor GaAs substrate oven dry, deoxidation is as the supporting body of entire device;
Step 2: on semi insulating semiconductor GaAs substrate,, play the effect of stress between buffering substrate and other layer by the epitaxy technology one first semiconductor GaAs contact layer of growing; While is Doped n-type impurity Si therein, and charge carrier is provided, and makes it be used for connecting external bias voltage, conduction current as the following contact layer of device;
Step 3: by epitaxy technology one first multiple quantum well infrared detector of growing, growth temperature is 650 ℃-750 ℃ on the first semiconductor GaAs contact layer, and it is formed by a plurality of identical quantum well structure repetitives growths;
Step 4: by the epitaxy technology second semiconductor GaAs contact layer of growing, and Doped n-type impurity Si plays two effects that detector is together in series on electricity up and down on first multiple quantum well infrared detector;
Step 5: by epitaxy technology one second multiple quantum well infrared detector of growing, growth temperature is 550 ℃-650 ℃ on the second semiconductor GaAs contact layer, and it is formed by a plurality of identical quantum well structure repeated growth;
Step 6: on second multiple quantum well infrared detector, contact by epitaxy technology growth regulation three semiconductor GaAs, and Doped n-type impurity Si, play the effect of protection entire device, and, be used for connecting external bias voltage, conduction current as last contact layer;
Step 7: with the side etching that first multiple quantum well infrared detector, the second semiconductor GaAs contact layer, second multiple quantum well infrared detector contact with the 3rd semiconductor GaAs, the exposed portions serve first semiconductor GaAs contact layer forms table top;
Step 8: on the table top that the first semiconductor GaAs contact layer forms with above the 3rd semiconductor GaAs contacts, make contact electrode and following contact electrode respectively, finish the making of device.
Wherein the bed thickness of step 2, step 4 and step 6 first, second and the 3rd semiconductor GaAs contact layer of growing respectively is the 300-700 nanometer, equal Doped n-type impurity Si, and growth temperature is 650 ℃-750 ℃.
Wherein step 3 each repetitive wherein comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics, wherein 0＜X＜0.41 bed thickness 30-50 nanometer;
One GaAs quantum well layer is produced on an Al
XGa
1-XOn the As barrier layer, wherein Doped n-type impurity Si provides charge carrier, bed thickness 3-5 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the GaAs quantum well layer, is used for limiting electronics, 0＜X＜0.41 wherein, bed thickness 30-50 nanometer.
Wherein each repetitive in the step 5 comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics, 0＜X＜0.41 wherein, bed thickness 30-50 nanometer;
One the one GaAs layer is produced on an Al
XGa
1-XOn the As barrier layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One In
XGa
1-XThe As quantum well layer, wherein 0＜X＜1 is produced on the GaAs layer, wherein is doped with n type impurity Si, provides charge carrier, bed thickness 2-5 nanometer;
One the 2nd GaAs layer is produced on In
XGa
1-XOn the As quantum well layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the 2nd GaAs layer, is used for limiting electronics, 0＜X＜0.41 wherein, bed thickness 30-50 nanometer.
Description of drawings
In order to further specify feature of the present invention and effect, the present invention is described further below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is according to the unit component structural representation that is long wave two-color quantum well infrared detector in the voltage modulated type made of first embodiment of the invention;
Fig. 2 is the conduction band band structure figure according to long wave two-color quantum well infrared detector in the voltage modulated type of first embodiment of the invention;
Fig. 3 is the optogalvanic spectra according to long wave two-color quantum well infrared detector in the voltage modulated type of first embodiment of the invention.
Embodiment
See also shown in Fig. 1 and the table 1, the present invention is a long wave two-color quantum well infrared detector in a kind of voltage modulated type, it is characterized in that, its device architecture comprises from top to bottom successively:
One semi insulating semiconductor GaAs substrate 1 is as the supporting body of entire device;
One first semiconductor GaAs contact layer 2 is produced on the semi insulating semiconductor GaAs substrate 1, bed thickness 300-700 nanometer, and Doped n-type impurity Si wherein, doping content is 1 * 10
18Cm
-3, play the effect of stress between buffering substrate and other layer, served as the following contact layer of device again, be used for connecting external bias voltage, conduction current;
One first multiple quantum well infrared detector 3, this detector forms (not shown) by 16 identical quantum well structure repetitive growths, is used to survey the infrared radiation that is positioned at the long wave atmospheric window, and each repetitive wherein comprises:
One the one AlXGa1-XAs barrier layer is used for limiting electronics, X=0.27 wherein, bed thickness 30-50 nanometer;
One GaAs quantum well layer is produced on an Al
XGa
1-XOn the As barrier layer, intermediate portion Doped n-type impurity Si is to provide charge carrier, doping content 5.2 * 10
17Cm
-3, bed thickness 3-5 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the GaAs quantum well layer, is used for limiting electronics, X=0.27 wherein, bed thickness 30-50 nanometer;
One second semiconductor GaAs contact layer 4 is produced on first multiple quantum well infrared detector 3, bed thickness 300-700 nanometer, and Doped n-type impurity Si wherein, doping content is 1 * 10
18Cm
-3, play two effects that detector is together in series on electricity up and down;
One second multiple quantum well infrared detector 5, be produced on the second semiconductor GaAs contact layer 4, this detector forms (not shown) by 8 identical quantum well structure repeated growth, is used to survey the infrared radiation that is positioned at the medium wave atmospheric window, and each repetitive wherein comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics, X=0.36 wherein, bed thickness 30-50 nanometer;
One the one GaAs layer is produced on an Al
XGa
1-XOn the As barrier layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One In
XGa
1-XThe As quantum well layer is produced on the GaAs layer, and wherein X=0.21 is doped with n type impurity Si so that charge carrier to be provided, and doping content is 6.4 * 10
18Cm
-3, bed thickness 2-5 nanometer;
One the 2nd GaAs layer is produced on In
XGa
1-XOn the As quantum well layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the 2nd GaAs layer, is used for limiting electronics, X=0.36 wherein, bed thickness 30-50 nanometer;
One the 3rd semiconductor GaAs contact layer 6 is produced on second multiple quantum well infrared detector 5, bed thickness 300-700 nanometer, and Doped n-type impurity Si wherein, doping content is 1 * 10
18Cm
-3, play the effect of protection entire device, and, be used for connecting external bias voltage, conduction current as last contact layer;
Contact electrode 7 and contact electrode 8 once on one, be produced in the 3rd semiconductor GaAs contact 6 and table top 21 that the first semiconductor GaAs contact layer 2 forms on.
Table 1
Please consult shown in Fig. 1 and the table 1, the present invention is the manufacture method of long wave two-color quantum well infrared detector in a kind of voltage modulated type, comprises the steps: again
Step 1: with a semi insulating semiconductor GaAs substrate 1 oven dry, after the deoxidation, as the supporting body of entire device;
Step 2: on semi insulating semiconductor GaAs substrate 1, by epitaxy technology growth growth one first semiconductor GaAs contact layer 2, play the effect of stress between buffering substrate and other layer, its growth temperature is 650 ℃-750 ℃, and bed thickness is the 300-700 nanometer.Doped n-type impurity Si wherein, concentration is 1 * 10
18Cm
-3, charge carrier is provided, make it be used for connecting external bias voltage, conduction current as the following contact layer of device;
Step 3: on the first semiconductor GaAs contact layer 2 by epitaxy technology the one the first multiple quantum well infrared detectors 3 of growing, it forms (not shown) by 16 identical quantum well structure repeated growth, growth temperature is 650 ℃-750 ℃, and each repetitive wherein comprises successively:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics, x=0.27 wherein, bed thickness 30-50 nanometer;
One GaAs quantum well layer is produced on an Al
XGa
1-XOn the As barrier layer, position, intermediate portion Doped n-type impurity Si is to provide charge carrier, and doping content is 5.2 * 10
17Cm
-3, bed thickness 3-5 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the GaAs quantum well layer, is used for limiting electronics, x=0.27 wherein, bed thickness 30-50 nanometer;
Step 4: by the epitaxy technology one second semiconductor GaAs contact layer 4 of growing, its growth temperature is 650 ℃-750 ℃ on first multiple quantum well infrared detector 3, and bed thickness is the 300-700 nanometer.Doped n-type impurity Si wherein, concentration is 1 * 10
18Cm
-3, charge carrier is provided, play two effects that detector is together in series on electricity up and down;
Step 5: on the second semiconductor GaAs contact layer 4 by epitaxy technology one second multiple quantum well infrared detector 5 of growing, it forms (not shown) by 8 identical quantum well structure repeated growth, growth temperature is 550 ℃-650 ℃, and each repetitive wherein comprises successively:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics, x=0.36 wherein, bed thickness 30-50 nanometer;
One the one GaAs layer is produced on an Al
XGa
1-XOn the As barrier layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One In
XGa
1-XThe As quantum well layer is produced on the GaAs layer, X=0.21 wherein, and Doped n-type impurity Si is to provide charge carrier, and doping content is 6.4 * 10
18Cm
-3, bed thickness 2-5 nanometer;
One the 2nd GaAs layer is produced on In
XGa
1-XOn the As quantum well layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the 2nd GaAs layer, is used for limiting electronics, x=0.36 wherein, bed thickness 30-50 nanometer;
Step 6: by epitaxy technology growth regulation three semiconductor GaAs contact layers 6, its growth temperature is 650 ℃-750 ℃ on second multiple quantum well infrared detector 5, and bed thickness is the 300-700 nanometer.Doped n-type impurity Si wherein, concentration is 1 * 10
18Cm
-3, play the effect of protection entire device, and be used for connecting external bias voltage, conduction current as contact layer.
Step 7: first multiple quantum well infrared detector 3, the second semiconductor GaAs contact layer 4, second multiple quantum well infrared detector 5 are contacted a side etching of 6 with the 3rd semiconductor GaAs, the exposed portions serve first semiconductor GaAs contact layer 2, form table top 21, so that its contact layer exposes out;
Step 8: on the table top 21 that the first semiconductor GaAs contact layer 2 forms with above the 3rd semiconductor GaAs contacts 6, make electrode 8,7 respectively, finish the making of device, make electrode 8,7 by this respectively above the 3rd semiconductor GaAs contact 6 in the detector course of work and read the signal of telecommunication that the incident infrared radiation causes on the long wave two-color quantum well infrared detector under the different external bias voltages in this voltage modulated type.
Fig. 2 is the band structure schematic diagram of long wave two-color quantum well infrared detector in the voltage modulated type described in the present invention, and wherein first detector includes n repetition period, B
1And W
1Be respectively its barrier width and potential well width, second detector includes m repetition period, B
2And W
2Be respectively its barrier width and potential well width.C
1, C
2And C
3Be respectively its three contact layers.E
0And E
1Be respectively the ground state and the first excited state energy level of quantum well in first quantum trap infrared detector, E
F1Be its Fermi level, the photon energy of its detecting light spectrum peak value correspondence is (E
1-E
0).E
2And E
3Be respectively the ground state and the first excited state energy level of quantum well in second quantum trap infrared detector, E
F2Be its Fermi level, the photon energy of its detecting light spectrum peak value correspondence is (E
3-E
2).When extraneous infrared radiation irradiation is on Infrared Detectors, electronics can be from the ground state transition to excitation state, this moment is if apply certain external bias voltage, then the electronics on the excitation state can form electric current, collected by external circuit, thereby make us obtain the information such as wavelength of relevant incident infrared radiation.According to excitation state present position difference, we can be classified as follows the intersubband optical transition: if excitation state is in quantum well, then be called bound state, corresponding transition is the transition (B-B) of bound state to bound state, wherein excitation state is in the quantum well but very then is called accurate bound state near the quantum well oral area, and corresponding transition is the transition (B-QB) that bound state arrives accurate bound state; If excitation state on potential barrier the time, then is called continuous state, corresponding transition is that excitation state is to the transition between the continuous state (B-C).Quantum well infrared its inner separately repetitive of two series connection described in the present invention is identical, but also inequality between the two, so both dynamic conductivity are also inequality.Thus in order to guarantee externally in the bias voltage change procedure (being generally the voltage range that commercial reading circuit multipotency provides), be distributed in two voltages on the quantum trap infrared detector and can make both be in the operating state that accounts for dominant advantage successively, thereby realization is to the detection of different-waveband.Must take into full account internal structure and repetitive periodicity separately, i.e. m and n numerical value for this reason.Remove n=16 in the present embodiment, m=8, but the present invention has comprised m simultaneously, other combination in any of n numerical value.
Fig. 3 is the optogalvanic spectra of long wave two-color quantum well infrared detector in the first embodiment of the invention voltage modulated type.Pass through Fig. 3, we can learn, the long wave two-color quantum well infrared detector can be operated in different infrared band scopes in the voltage modulated type of the present invention under different applying bias voltages, has covered 3-5 micron medium wave infrared atmospheric window mouth and 8-12 LONG WAVE INFRARED atmospheric window substantially.
The present invention compares with invention in the past, has following meaning:
(1) compares with monochrome devices and expanded the detecting band scope greatly;
(2) compare with three terminal device, each picture dot has reduced by a contact electrode, but still can survey two infrared information of blurting out of atmosphere under different bias voltages, thereby face battle array device making technics is greatly simplified.
It should be noted last that above embodiment is only in order to illustrate technical scheme of the present invention but not limited field.Although only provided the example that the n type mixes, its method is equally applicable to the device that the p type mixes; Although only provided the example of the double-colored device of middle long wave, can be used for making the polychrome device equally; Although only provided the example of single pixel device, behind etched diffraction grating on the 3rd semiconductor GaAs contact layer 6, its method is equally applicable to face battle array device.Those of ordinary skill in the art should be appreciated that technical scheme of the present invention is made amendment or is equal to replacement, and do not break away from the spirit and scope of technical solution of the present invention, and it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. long wave two-color quantum well infrared detector in the voltage modulated type comprises:
One semi insulating semiconductor GaAs substrate is as the supporting body of entire device;
One first semiconductor GaAs contact layer is produced on the semi insulating semiconductor GaAs substrate, and wherein Doped n-type impurity plays the effect of stress between buffering substrate and other layer, has served as the following contact layer of device again, is used for connecting external bias voltage, conduction current;
One first multiple quantum well infrared detector, be produced on the first semiconductor GaAs contact layer, Doped n-type impurity in its quantum well, be used to survey the infrared radiation that is positioned at the long wave atmospheric window, the area of this first multiple quantum well infrared detector is less than the area of the first semiconductor GaAs contact layer, and being positioned at the first semiconductor GaAs contact layer, one side, the opposite side of this first semiconductor GaAs contact layer is formed with a table top;
One second semiconductor GaAs contact layer is produced on first multiple quantum well infrared detector, and wherein Doped n-type impurity plays two effects that detector is together in series on electricity up and down;
One second multiple quantum well infrared detector is produced on the second semiconductor GaAs contact layer, and Doped n-type impurity in its quantum well is used to survey the infrared radiation that is positioned at the medium wave atmospheric window;
One the 3rd semiconductor GaAs contact layer is produced on second multiple quantum well infrared detector, and wherein Doped n-type impurity plays the effect of protection entire device, and as last contact layer, is used for connecting external bias voltage, conduction current;
Contact electrode and following contact electrode on one are produced on the table top that the contact of the 3rd semiconductor GaAs is gone up and the first semiconductor GaAs contact layer forms.
2. long wave two-color quantum well infrared detector in the voltage modulated type according to claim 1, wherein the bed thickness of first, second and the 3rd semiconductor GaAs contact layer is the 300-700 nanometer.
3. long wave two-color quantum well infrared detector in the voltage modulated type according to claim 1, first and second multiple quantum well infrared detectors wherein, it is inner separately to be made of a plurality of identical repetitives.
4. long wave two-color quantum well infrared detector in the voltage modulated type according to claim 3, wherein each repetitive of this first multiple quantum well infrared detector comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics;
One GaAs quantum well layer is produced on an Al
XGa
1-XOn the As barrier layer, wherein Doped n-type impurity provides charge carrier;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the GaAs quantum well layer, is used for limiting electronics.
5. long wave two-color quantum well infrared detector in the voltage modulated type according to claim 3, wherein each repetitive of this second multiple quantum well infrared detector comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics;
One the one GaAs layer is produced on an Al
XGa
1-XOn the As barrier layer, improve the interface quality of quantum well;
One InXGa1-XAs quantum well layer is produced on the GaAs layer, and wherein Doped n-type impurity provides charge carrier;
One the 2nd GaAs layer is produced on the InXGa1-XAs quantum well layer, improves the interface quality of quantum well;
One the 2nd AlXGa1-XAs barrier layer is produced on the 2nd GaAs layer, is used for limiting electronics;
6. the manufacture method of long wave two-color quantum well infrared detector in the voltage modulated type is characterized in that, comprises the steps:
Step 1: with semi insulating semiconductor GaAs substrate oven dry, deoxidation is as the supporting body of entire device;
Step 2: on semi insulating semiconductor GaAs substrate,, play the effect of stress between buffering substrate and other layer by the epitaxy technology one first semiconductor GaAs contact layer of growing; While is Doped n-type impurity Si therein, and charge carrier is provided, and makes it be used for connecting external bias voltage, conduction current as the following contact layer of device;
Step 3: by epitaxy technology one first multiple quantum well infrared detector of growing, growth temperature is 650 ℃-750 ℃ on the first semiconductor GaAs contact layer, and it is formed by a plurality of identical quantum well structure repetitives growths;
Step 4: by the epitaxy technology second semiconductor GaAs contact layer of growing, and Doped n-type impurity Si plays two effects that detector is together in series on electricity up and down on first multiple quantum well infrared detector;
Step 5: by epitaxy technology one second multiple quantum well infrared detector of growing, growth temperature is 550 ℃-650 ℃ on the second semiconductor GaAs contact layer, and it is formed by a plurality of identical quantum well structure repeated growth;
Step 6: on second multiple quantum well infrared detector, contact by epitaxy technology growth regulation three semiconductor GaAs, and Doped n-type impurity Si, play the effect of protection entire device, and, be used for connecting external bias voltage, conduction current as last contact layer;
Step 7: with the side etching that first multiple quantum well infrared detector, the second semiconductor GaAs contact layer, second multiple quantum well infrared detector contact with the 3rd semiconductor GaAs, the exposed portions serve first semiconductor GaAs contact layer forms table top;
Step 8: on the table top that the first semiconductor GaAs contact layer forms with above the 3rd semiconductor GaAs contacts, make contact electrode and following contact electrode respectively, finish the making of device.
7. the manufacture method of long wave two-color quantum well infrared detector in the voltage modulated type according to claim 6, wherein the bed thickness of step 2, step 4 and step 6 first, second and the 3rd semiconductor GaAs contact layer of growing respectively is the 300-700 nanometer, equal Doped n-type impurity Si, growth temperature is 650 ℃-750 ℃.
8. the manufacture method of long wave two-color quantum well infrared detector in the voltage modulated type according to claim 6, step 3 wherein, first multiple quantum well infrared detector and second multiple quantum well infrared detector of step 5 growth, its separately in the quantum well layer n type impurity Si doping content different.
9. the manufacture method of long wave two-color quantum well infrared detector in the voltage modulated type according to claim 6, wherein step 3 each repetitive wherein comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics, wherein 0＜X＜0.41 bed thickness 30-50 nanometer;
One GaAs quantum well layer is produced on an Al
XGa
1-XOn the As barrier layer, wherein Doped n-type impurity Si provides charge carrier, bed thickness 3-5 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the GaAs quantum well layer, is used for limiting electronics, 0＜X＜0.41 wherein, bed thickness 30-50 nanometer.
10. the manufacture method of long wave two-color quantum well infrared detector in the voltage modulated type according to claim 6, wherein each repetitive in the step 5 comprises:
One the one Al
XGa
1-XThe As barrier layer is used for limiting electronics, 0＜X＜0.41 wherein, bed thickness 30-50 nanometer;
One the one GaAs layer is produced on an Al
XGa
1-XOn the As barrier layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One In
XGa
1-XThe As quantum well layer, wherein 0＜X＜1 is produced on the GaAs layer, wherein is doped with n type impurity Si, provides charge carrier, bed thickness 2-5 nanometer;
One the 2nd GaAs layer is produced on In
XGa
1-XOn the As quantum well layer, improve the interface quality of quantum well, bed thickness 0.5-1 nanometer;
One the 2nd Al
XGa
1-XThe As barrier layer is produced on the 2nd GaAs layer, is used for limiting electronics, 0＜X＜0.41 wherein, bed thickness 30-50 nanometer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910081984XA CN101866932B (en) | 2009-04-15 | 2009-04-15 | Voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector and manufacturing method thereof |
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|---|---|---|---|
| CN200910081984XA CN101866932B (en) | 2009-04-15 | 2009-04-15 | Voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector and manufacturing method thereof |
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| CN101866932A true CN101866932A (en) | 2010-10-20 |
| CN101866932B CN101866932B (en) | 2011-10-05 |
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| CN200910081984XA Expired - Fee Related CN101866932B (en) | 2009-04-15 | 2009-04-15 | Voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103151418A (en) * | 2011-12-07 | 2013-06-12 | 有研半导体材料股份有限公司 | Double-barrier quantum well structure semiconductor infrared photoelectric detector and manufacturing method thereof |
| CN103325862A (en) * | 2013-05-23 | 2013-09-25 | 中国科学院半导体研究所 | Two-tone quantum well infrared light detector |
| CN106025022A (en) * | 2016-05-20 | 2016-10-12 | 皖西学院 | Semiconductor quantum well structure capable of modulating microstrip gap by voltage |
| CN108520904A (en) * | 2018-06-12 | 2018-09-11 | 中国科学院上海技术物理研究所 | A kind of GaAs base two-color quantum well infrared detectors based on resonant-tunneling effect |
| CN113105235A (en) * | 2021-04-01 | 2021-07-13 | 中国计量大学 | VO2Ceramic, high-responsivity infrared weak light detector and regulation and control method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6921897B1 (en) * | 2000-09-21 | 2005-07-26 | Lockheed Martin Corporation | Circuit and method for varying the integration time of moving charges from a photodetector |
| CN1877869A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Method for fabricating infrared detector area array of double color quantum trap |
| JP4829809B2 (en) * | 2007-02-14 | 2011-12-07 | 富士通株式会社 | Quantum well infrared detector |
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2009
- 2009-04-15 CN CN200910081984XA patent/CN101866932B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151418A (en) * | 2011-12-07 | 2013-06-12 | 有研半导体材料股份有限公司 | Double-barrier quantum well structure semiconductor infrared photoelectric detector and manufacturing method thereof |
| CN103325862A (en) * | 2013-05-23 | 2013-09-25 | 中国科学院半导体研究所 | Two-tone quantum well infrared light detector |
| CN103325862B (en) * | 2013-05-23 | 2016-04-20 | 中国科学院半导体研究所 | A kind of double color quantum trap infrared detector |
| CN106025022A (en) * | 2016-05-20 | 2016-10-12 | 皖西学院 | Semiconductor quantum well structure capable of modulating microstrip gap by voltage |
| CN108520904A (en) * | 2018-06-12 | 2018-09-11 | 中国科学院上海技术物理研究所 | A kind of GaAs base two-color quantum well infrared detectors based on resonant-tunneling effect |
| CN108520904B (en) * | 2018-06-12 | 2023-09-12 | 中国科学院上海技术物理研究所 | GaAs-based two-color quantum well infrared detector based on resonance tunneling effect |
| CN113105235A (en) * | 2021-04-01 | 2021-07-13 | 中国计量大学 | VO2Ceramic, high-responsivity infrared weak light detector and regulation and control method thereof |
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|---|---|
| CN101866932B (en) | 2011-10-05 |
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