CN108519715B - Multifunctional plasma logic device and control method of logic state thereof - Google Patents

Multifunctional plasma logic device and control method of logic state thereof Download PDF

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CN108519715B
CN108519715B CN201810342623.5A CN201810342623A CN108519715B CN 108519715 B CN108519715 B CN 108519715B CN 201810342623 A CN201810342623 A CN 201810342623A CN 108519715 B CN108519715 B CN 108519715B
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解宜原
王云
叶逸琛
柴俊雄
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Abstract

The invention particularly relates to a multifunctional plasma logic device and a control method of a logic state thereof. The two elliptic cylinders in the hexagonal resonant cavity are used as input logic state controllers, different rotation angles of the two elliptic cylinders represent different input logic states, the input logic states are determined by controlling the rotation angles of the elliptic cylinders, an AND gate and a NOR gate are realized at a Through port, a NOT gate, a NAND gate, an AND gate, a NAND gate and a NOR gate are realized at a Drop port and are simultaneously controlled, and the hexagonal resonant cavity has the advantages of easiness in control, high integration level, high response speed and the like.

Description

Multifunctional plasma logic device and control method of logic state thereof
Technical Field
The invention belongs to the field of plasma photonics, relates to the field of nanoscale optical logic devices, and particularly relates to a multifunctional plasma logic device and a logic state control method thereof.
Background
With the rapid development of modern science and technology, many research and application fields pursue high performance such as intellectualization, miniaturization, rapidness and the like, the traditional electric communication cannot meet the current development requirement, compared with the electric communication, the optical communication has extremely high speed, extremely high bandwidth and extremely high information capacity, can overcome the defects in the electric communication technology, and has a very wide application prospect. The optical logic device is a key device for realizing high-speed optical packet switching, all-optical address recognition, data coding, parity check, signal regeneration, optical calculation and future high-speed high-capacity all-optical signal processing, and meanwhile, the development of the optical logic gate is a bridge for realizing spanning from electrical calculation to optical calculation, so that the limitation of 'electronic bottleneck' can be broken through, the network capacity is improved, and all-optical 3R regeneration is realized. As a core technology for realizing optical communication, optical logic devices have attracted extensive attention in the industry and are one of the current research hotspots.
In fact, since the beginning of the twentieth century, the research on optical logic devices using semiconductor materials has been started, but the operation is complicated, the system is large, and the technology is not mature. With the progress of research, people gradually turn to the field of plasma. Many optical logic gates based on surface plasmons have been implemented so far, and the structures used are based on waveguides, and the logical operation depends on the relative phase difference of the input signals. This is because the surface plasmon can overcome the diffraction limit and can perform optical manipulation in a sub-wavelength range, and the waveguide has advantages of simple structure and easy manufacture.
However, due to the difficulty in precise control of optical phase difference, this method of control results in an inherent instability and a low output level contrast ratio. In addition, the current research on optical logic devices is still basically in a state that only one logic function can be realized in one structure, and further research is needed on the problems of miniaturization and integration of logic devices, i.e., realization of multiple logic functions in one structure and simultaneous operation and control, and the like, so that the problems to be solved are also important to the research on the current logic devices.
Disclosure of Invention
In order to solve the problems of poor integration and inconvenient operation of a logic device in the prior art, the invention provides a multifunctional plasma logic device and a control method of a logic state thereof, and the multifunctional plasma logic device has the advantages of easy control, high integration level, high response speed and convenience for use on a chip. The technical problem to be solved by the invention is realized by the following technical scheme:
the multifunctional plasma logic device comprises a background plate, two hexagonal resonant cavities with the same internal structure and two mutually parallel waveguides, wherein a rotatable elliptic cylinder is nested in each hexagonal resonant cavity, the background plate and the elliptic cylinder are made of metal materials, and the waveguides and the hexagonal resonant cavities are made of air.
Further, silver is selected as the metal material.
Further, the waveguide width w is 50nm, the hexagonal side length a is 200nm, and the major axis R of the ellipse1155nm, elliptical minor axis R285nm, the distance d between the waveguide and the hexagon is 20nm, and the distance L between the two ellipses is 480 nm.
The method for controlling the logic state of the multifunctional plasma logic device comprises the following specific steps: two elliptic cylinders in the hexagonal resonant cavity are used as input logic state controllers, different rotation angles of the two elliptic cylinders represent different input logic states, and the input logic states are determined by controlling the rotation angles of the elliptic cylinders; continuously introducing a section of wavelength signal into the input port, wherein when the rotation angle of the elliptic cylinder is 30 degrees, the input logic state is '0', and when the rotation angle of the elliptic cylinder is 60 degrees, the input logic state is '1'; and finally, an AND gate and a NOR gate are realized at the Through port, an NOT gate, a NAND gate, an AND gate, a NAND gate and a NOR gate are realized at the Drop port, and the three logic gates are controlled simultaneously.
Further, in the above control method, a wavelength signal is continuously introduced into the input port, the input logic states are controlled to be four states of '00', '01', '10' and '11', the transmission efficiency at a Through port or a Drop port under a specific wavelength is observed, the output logic state is judged according to the threshold value set for the transmission efficiency, and finally an and gate and a nor gate are realized at the Through port, and an nor gate and a nand gate are realized at the Drop port.
Further, in the above control method, a plurality of wavelength signals are simultaneously input to the input port, and the synchronous control of the and gate, the nand gate, and the nor gate is realized by observing the transmission efficiency at different wavelengths at different ports.
Further, in the above manipulation method, the angle change of the two elliptic cylinders affects the transmission characteristics, the plasma surface wave is transmitted by the bottom waveguide, and if the rotation angle of the elliptic cylinders is fixed, the plasma surface wave with a specific frequency is coupled into the hexagonal resonant cavity and finally output from the Drop port through the top waveguide if the resonance condition is met; if the resonance condition is not satisfied, the signal is output from the Through port.
Compared with the prior art, the invention has the beneficial effects that:
1. the multifunctional plasma logic device is designed based on surface plasma, can break through the limit of diffraction limit, reduces the size of the device, improves the integration level, and has a simple structure.
2. The control method can realize the plasma induced transparency effect, and the effect has the advantages of low loss, ultra-fast response and the like, and is beneficial to realizing a high-performance logic gate.
3. The control method realizes the control of the input logic state by utilizing the angle of the rotating elliptic cylinder, and has novel method and simple operation.
4. The control method can realize four logic functions on the structure of a multifunctional plasma logic device, and three logic controls can be simultaneously realized, thereby greatly improving the integration level of the device and the efficiency of logic operation.
5. The control method has higher contrast ratio when outputting logic states of '0' and '1', and can reduce the error of logic operation.
Drawings
FIG. 1 is a two-dimensional plan view of a logic gate;
FIG. 2 is a three-dimensional structure diagram of a logic gate;
FIG. 3 shows a beam of electromagnetic waves continuously introduced from an input port, the wavelength of the electromagnetic waves ranges from 600nm to 760nm when θ1＝θ2＝30°、θ1＝30° θ2＝60°、θ1＝60° θ2＝30°、θ1＝θ260 degrees, namely the transmission lines of the Through port when four states of '00', '01', '10' and '11' are input;
FIG. 4 shows a beam of electromagnetic waves continuously introduced from the input port, the wavelength range is 600nm-760nm when θ1＝θ2＝30°、θ1＝30° θ2＝60°、θ1＝60° θ2＝30°、θ1＝θ260 degrees, namely the transmission line of the Drop port when four states of '00', '01', '10' and '11' are input;
FIG. 5 is the transmission lines of an AND gate;
FIG. 6 is a transmission line of a NAND gate;
FIG. 7 is the transmission lines of a NOR gate;
FIG. 8 is the transmission lines of a NOT gate;
FIG. 9 is a real-time field profile at an incident wavelength of 633 nm;
FIG. 10 is a real-time field profile for an incident wavelength of 680 nm;
fig. 11 is a real-time field profile at an incident wavelength of 732 nm.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
The embodiment provides a multifunctional plasma logic device, which comprises a background plate, two hexagonal resonant cavities with the same internal structure and two mutually parallel waveguides, wherein the hexagonal resonant cavities are nested with a rotatable elliptic cylinder, the background plate and the elliptic cylinder are both made of metal materials, and the waveguides and the hexagonal resonant cavities are made of air. The background plate and the elliptic cylinder are made of metal materials, but in order to obtain the maximum propagation distance, the metal with a larger real part of dielectric constant and a smallest imaginary part of dielectric constant needs to be selected, namely the metal material with low loss is selected, and the absorption loss of metal silver is the minimum in a visible light range. So metallic silver is chosen here as the metallic material of the structure. Although gold is also used as a material of the background plate, the propagation distance is smaller than that of silver, and most of the current research on SPPs is to use metallic silver.
The two-dimensional structure diagram of the XY plane of the multifunction plasma logic device of this embodiment is shown in fig. 1, which is composed of a background plate, two identical hexagonal cavities respectively nested with a rotatable elliptic cylinder inside, and two identical hexagonal cavitiesThe parallel waveguides are made of silver, the background plate and the elliptic cylinder are made of silver, and the relative dielectric constant of the silver satisfies the Drude model:
Figure GDA0002262123860000051
wherein epsilon∞＝3.7、εpThe constants of 9.1eV and γ 0.018eV represent the dielectric constant of silver, the plasma frequency and the electron impact frequency when the angular frequency of the input wave is infinite; ω represents the angular frequency of the incident wave,
Figure GDA0002262123860000052
representing the units of the imaginary part in the complex domain.
When the following parameters are selected for other structures of the multifunctional plasma logic device, the simulation effect is good, and the specific parameters are as follows: waveguide width w of 50nm, hexagonal side length a of 200nm, and ellipse major axis
R1155nm, elliptical minor axis R2Distance between waveguide and hexagon of 85nm
d is 20nm, and the center distance L between the two ellipses is 480 nm. The ellipse and the hexagon of the multifunctional plasma logic device can be used as logic gates by selecting other structural parameters. The included angles (acute angles) between the major axis of the ellipse and the positive semiaxis of the X axis are the rotation angles of the ellipse and are respectively theta1、θ2. Wherein the waveguide width w and the coupling distance d between the hexagonal ring and the parallel waveguide have an impact on device performance. The increase of the width w of the parallel waveguide will affect the coupling effect between the waveguide and the micro-ring resonant cavity and the waveguide loss, so that the resonant wavelength of the micro-ring resonant cavity is red-shifted, and the transmission coefficient of the micro-ring resonant cavity is affected. Similarly, as the coupling distance d between the hexagonal ring and the parallel waveguide increases, the coupling effect is also weakened, so that the field attenuation rate caused by the energy coupled into the waveguide is reduced, the resonant wavelength of the micro-ring resonant cavity undergoes blue shift, and the transmission coefficient is finally influenced. Therefore, the width w of the parallel waveguide and the coupling distance d between the hexagonal ring and the parallel waveguide need to be reasonably designed to ensure that the device achieves the best performance, the set parameters are values with the best performance after simulation, and most researches are carried outAlso based on these two parameters. The side length of the hexagon, the major axis and the minor axis of the ellipse can be set according to the required resonance wavelength, and the wavelength of the corresponding input signal is adjusted accordingly, so that the adjustable range is large, and the structure size is just a special example. In addition, the arrangement of the waveguide and the resonant cavity medium is not limited to air, and the refractive index is 1. The waveguide and the hexagonal resonant cavity can be made of other materials with different refractive indexes, and the spectrum can be translated. However, the waveguide, and the medium of the cavity of the present invention are arranged as air for cost saving and convenient handling.
The structure and the structural parameters of the device are introduced above, and the transmission characteristics thereof are analyzed below.
The multifunctional plasma logic device utilizes angle change to realize input logic state, and the specific method comprises the following steps: two elliptic cylinders in the hexagonal resonant cavity are used as input logic state controllers, different rotation angles of the two elliptic cylinders represent different input logic states, and the input logic states are determined by controlling the rotation angles of the elliptic cylinders; continuously introducing a section of wavelength signal into the input port, wherein when the rotation angle of the elliptic cylinder is 30 degrees, the input logic state is '0', and when the rotation angle of the elliptic cylinder is 60 degrees, the input logic state is '1'; and finally, an AND gate and a NOR gate are realized at the Through port, an NOT gate, a NAND gate, an AND gate, a NAND gate and a NOR gate are realized at the Drop port, and the three logic gates are controlled simultaneously.
The signal with the wavelength of 600nm-760nm is continuously input into the input port of the embodiment. The control input logic state is respectively '00', '01', '10' and '11', the transmission efficiency under specific wavelength is observed at a Through port or a Drop port, a threshold value is set according to the transmission efficiency to judge the output logic state, and finally an AND gate and a NOR gate are realized at the Through port, and a NOR gate and a NAND gate are realized at the Drop port. A plurality of wavelength signals are simultaneously input into the input port, and synchronous control of three logic gates, namely an AND gate, an NAND gate and a NOR gate, is realized by observing transmission efficiency under different wavelengths at different ports.
The angle change of the two elliptic cylinders influences the transmission characteristics, the plasma surface waves are transmitted by the bottom end waveguide, and under the condition that the rotation angle of the elliptic cylinders is fixed, if the resonance condition is met, the plasma surface waves with specific frequency are coupled into the hexagonal resonant cavity and finally output from the Drop port through the top end waveguide; if the resonance condition is not satisfied, the signal is output from the Through port.
When a beam of electromagnetic waves enters from the entrance port, if the wavelength of the electromagnetic waves is much larger than the width of the waveguide, only the fundamental mode TM can propagate in the waveguide, which causes surface plasmons (SPPs) to be excited and confined in the waveguide. Surface plasmons are a special electromagnetic wave that is generated by the interaction of incident photons with free vibrating electrons on the surface of a metal. Can overcome diffraction limit and carry out optical control in a sub-wavelength range. The dispersion equation for SPPs in a waveguide is as follows:
Figure GDA0002262123860000071
wherein if the medium of the waveguide and the cavity is air, then epsilond1. The effective refractive index n can be calculated by the formulaeff。
SPPs then propagate in the waveguide, and their transmission characteristics can be analyzed by coupled-mode theory. As shown in FIG. 1, the amplitudes of incident, transmission, feedback and downloading electromagnetic waves of two hexagonal micro-ring resonators with embedded rotatable ellipses are S respectivelyi1，2、St1，2、Sf1，2And Sd1，2. Generated incident wave Si1Propagating along the bottom waveguide, and when passing through the first cavity, a portion is coupled into the cavity and becomes Sd1Is emitted through Drop port, and part of the light is St1And continues to propagate to the right along the bottom waveguide. St1After propagation distance L, as incident electromagnetic wave S of second resonant cavityi2Likewise, Si2A part becomes St2Exiting the Through port, a portion of which is coupled into a second resonator cavity and injected intoTop waveguide to become Sd2Then propagates leftward as S via the top waveguidef1. If the resonant wavelengths of the two cavities are slightly detuned, interference occurs, resulting in a plasma-induced transparency effect. Normalized amplitude a for time evolution of each hexagonal micro-ring resonator1，2Can be obtained by the following formula:
Figure GDA0002262123860000081
where n is 1 and 2 represents two resonators, ωnIs the resonant frequency, k, of the two resonant cavitiesi，nAnd k isc，nFor the field decay rate caused by internal losses and coupling into the waveguide,
Figure GDA0002262123860000082
in order to be a phase-coupling coefficient,
Figure GDA0002262123860000083
representing the units of the imaginary part in the complex domain. According to the law of conservation of energy, the amplitudes of the transmitted and downloaded electromagnetic waves can be obtained according to the following formula:
Figure GDA0002262123860000084
Figure GDA0002262123860000085
the frequency of the incident light pulse is omega and the time-dependent value is e-jωtAnd according to
Figure GDA0002262123860000086
The transmission and feedback coefficients of a single resonant cavity can be obtained as follows:
Figure GDA0002262123860000087
Figure GDA0002262123860000088
therefore, for a single hexagonal ring resonator in the optical delay line, the amplitudes of the feedback and transmission electromagnetic waves satisfy the following matrix:
due to the steady state condition of
Figure GDA0002262123860000091
(
Figure GDA0002262123860000092
The phase difference between the two resonant loops), the feedback and transmission electromagnetic waves of the entire tunable optical delay line can be obtained by the following formula:
Figure GDA0002262123860000093
because the incident electromagnetic wave is only input from the incident port of the bottom waveguide and no input is provided at the upper right port, S is obtainedf2The transmission coefficient T of its Through port can be obtained according to the following equation:
Figure GDA0002262123860000094
when in use
Figure GDA0002262123860000095
A significant plasma-induced transparency phenomenon occurs, with the transparency peak at the center wavelength of the two resonant wavelengths. By the formula:
Figure GDA0002262123860000096
(where ω iscThe center frequency of the transparent window, c is the speed of light in vacuum) it follows that the change in L has an effect
Figure GDA0002262123860000097
And is in direct proportion. In order to obtain better transmission characteristics and to make the device more material-saving in case of being able to be manufactured, the value of L can be determined to be 480nmMake it
Figure GDA0002262123860000098
Is 2 pi.
Furthermore, the adjustment of T can be achieved by adjusting the rotation angle of the ellipse, which means the change of the cavity structure, and thus the transmission characteristics will also be different.
The theoretical derivation process is verified using an analog simulation method. Currently, in the field of plasma optical devices, a more mathematical simulation method is used as a Finite-difference-time-domain method (FDTD), and this embodiment also uses this method to perform simulation verification on the transmission characteristics of the structure and to explain the implementation of the logic gate in detail. Firstly, two ellipses can be used as input logic level controllers, different rotation angles represent different input logic states, and 30 degrees represent logic input '0'; 60 represents a logic input '1'. The determination of the output logic level determines the '0' and '1' levels by observing the Transmission rate (Transmission) value at the Through or Drop port.
Continuously introducing a beam of electromagnetic waves from the input port, wherein the wavelength range is 600nm-760nm, and when the angles of the two ellipses are theta respectively1＝θ2＝30°、θ1＝30° θ2＝60°、θ1＝60° θ2＝30°、θ1＝θ2The transmission lines of the Through port and the Drop port are shown in fig. 3 and 4 when the input is 60 °, that is, the input is '00', '01', '10', '11'. If the transmission rates of the four states are observed at the Through port when the input electromagnetic wave is 680nm, the corresponding values are 0.89%, 2.14%, 4.34% and 84.45%, respectively, and 50% is used as the decision threshold, the corresponding output logic states are '0', '1', and therefore, an and gate can be realized. As shown in table 1.
Watch 1 AND gate
Figure GDA0002262123860000101
On the contrary, if the Drop port observes the transmission rates of the four states when the input electromagnetic wave is 680nm, the corresponding values are 78.32%, 69.02%, 62.40% and 0.24%, respectively, and the corresponding output logic states are '1', '0', so that the nand gate can be implemented. As shown in table 2.
TABLE 2 NAND gate
Figure GDA0002262123860000102
Figure GDA0002262123860000111
If the transmission efficiency corresponding to the four logic states is 78.63%, 27.76%, 24.81%, 24.17% or 86.52%, 29.95%, 33.02% or 20.07% respectively when the Through port observes a wavelength of 633nm or 732nm, the corresponding output logic states are '1', '0' and '0', and nor gates can be realized under the two wavelengths. As shown in table 3.
TABLE 3 NOR gate
Figure GDA0002262123860000112
In addition, the implementation method of the not gate needs to be described, because the not gate has only one logic input, one of the ellipses needs to be kept at 60 ° as the controller all the time, and the other is used as the logic input to control the logic state of the input. If theta is maintained160 °, then θ2When the input is 30 degrees and 60 degrees respectively, namely the input is '0' and '1' states, the transmission efficiency of the wavelength observed at 680nm at the Drop port is 62.40% and 0.24% respectively, namely the corresponding output logic states are '1' and '0'; if theta is maintained2When the angle is 60 degrees, then theta1In the case of the two states 30 ° and 60 °, the corresponding output transmission rates are 69.02% and 0.24%, respectively, i.e., the corresponding output logic states are '1' and '0', so that the inverter can be implemented by this method. As shown in table 4.
TABLE 4 NOT-NOT gate
Figure GDA0002262123860000113
Figure GDA0002262123860000121
The detailed values and the transmission characteristics of the individual logic gates, i.e., and, nand, nor, are shown in fig. 5-8. As can be seen from the above description, if electromagnetic waves with two wavelengths of 633nm, 680nm, or 680nm, 732nm are simultaneously introduced from the input port, the structure can simultaneously implement three logic functions, i.e., and, nand, or nor. Further, the real-time field profiles at incident wavelengths of 633nm, 680nm, and 732nm, respectively, are shown in fig. 9-11.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (7)

1. A multifunctional plasma logic device is characterized by comprising a background plate, two hexagonal resonant cavities with the same internal structure and two mutually parallel waveguides, wherein the hexagonal resonant cavities are nested with a rotatable elliptic cylinder, the background plate and the elliptic cylinder are both made of metal materials, and the waveguides and the hexagonal resonant cavities are both made of air; the waveguide and the hexagonal resonant cavity are respectively positioned in the background plate, and the waveguide is positioned on two sides of the hexagonal cavity.
2. The multifunction plasma logic device as recited in claim 1 wherein said metallic material is silver.
3. A multifunction plasma logic device as in claim 1The waveguide is characterized in that the waveguide width w is 50nm, the side length a of the hexagon is 200nm, and the major axis R of the ellipse1155nm, elliptical minor axis R285nm, the distance d between the waveguide and the hexagon is 20nm, and the distance L between the two ellipses is 480 nm.
4. A method for controlling the logic state of a multifunctional plasma logic device according to any one of claims 1 to 3, which is characterized in that the method comprises the following steps: two elliptic cylinders in the hexagonal resonant cavity are used as input logic state controllers, different rotation angles of the two elliptic cylinders represent different input logic states, and the input logic states are determined by controlling the rotation angles of the elliptic cylinders; continuously introducing a section of wavelength signal into the input port, wherein when the rotation angle of the elliptic cylinder is 30 degrees, the input logic state is '0', and when the rotation angle of the elliptic cylinder is 60 degrees, the input logic state is '1'; and finally, an AND gate and a NOR gate are realized at the Through port, an NOT gate, a NAND gate, an AND gate, a NAND gate and a NOR gate are realized at the Drop port, and the three logic gates are controlled simultaneously.
5. The control method according to claim 4, wherein a wavelength signal is continuously input into the input port, the input logic states are controlled to be four states of '00', '01', '10' and '11', the transmission efficiency at a specific wavelength is observed at the Through port or the Drop port, the output logic state is judged by setting a threshold according to the transmission efficiency, and finally an AND gate and an NOR gate are realized at the Through port, and an NOR gate and an NAND gate are realized at the Drop port.
6. The control method according to claim 5, wherein a plurality of wavelength signals are simultaneously input to the input port, and synchronous control of three logic gates, namely an AND gate, an NAND gate and a NOR gate, is realized by observing transmission efficiency at different wavelengths at different ports.
7. The steering method according to claim 4, wherein the angle change of the two elliptic cylinders affects the transmission characteristics, the plasma surface wave is transmitted by the bottom waveguide, and under the condition that the elliptic cylinders rotate for a certain angle, if a resonance condition is met, the plasma surface wave with a specific frequency is coupled into the hexagonal resonant cavity and finally output from the Drop port through the top waveguide; if the resonance condition is not satisfied, the signal is output from the Through port.
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