CN210376753U - One-way plasmon Bragg waveguide reflector - Google Patents
One-way plasmon Bragg waveguide reflector Download PDFInfo
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- CN210376753U CN210376753U CN201920963978.6U CN201920963978U CN210376753U CN 210376753 U CN210376753 U CN 210376753U CN 201920963978 U CN201920963978 U CN 201920963978U CN 210376753 U CN210376753 U CN 210376753U
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Abstract
A unidirectional plasmon Bragg waveguide reflector comprises a first metal layer, a non-metal layer and a second metal layer; the non-metal layer comprises a core layer and at least one microstructure which is formed on the core layer, is asymmetric along the transmission direction of electromagnetic waves in the core layer and is integrally formed with the core layer; the reflector exhibits a high absorption rate when the electromagnetic wave is incident in a first direction of the reflector; the reflector exhibits a high reflectivity when the electromagnetic wave is incident in a second direction of the reflector. The reflector can realize the unidirectional reflection of electromagnetic waves, namely the reflector can simultaneously realize the functions of a unidirectional reflector and a unidirectional absorber.
Description
Technical Field
The utility model relates to a plasmon Bragg waveguide, concretely relates to one-way plasmon Bragg waveguide reflector.
Background
Plasmons provide an effective way to concentrate or direct light beyond the diffraction limit. Among the various types of plasmon optical waveguides, metal-insulator-metal (MIM) waveguides have attracted attention because they have a very strong field limit and can be used for plasmon circuits on highly integrated chips. Today, a range of plasmonic devices based on MIM waveguides are proposed, such as detectors, reflectors, electro-optical switches, non-linear devices, filters, resonators, etc. In recent years, among many MIM waveguide devices, the attention that plasmon bragg reflectors receive has increased significantly. This is because the plasmon bragg reflector can be used to control the plasmon module, which is a basic unit forming the plasmon device and the plasmon circuit. However, the entire structure of the nanostructure elements and even the plasmon bragg reflector in the related art is limited to a longitudinally symmetric structure. Therefore, the reflectivity of light incident from the left side of the plasmonic module is always equal to the reflectivity incident from the right side of the plasmonic module. However, in some specific demanding scenarios, such as those in which the electromagnetic wave transmission in both directions of the reflector is required to exhibit asymmetric properties, equal reflectivity limits the field of application of plasmonic optics.
In many articles, plasmon bragg reflectors are analyzed, designed and optimized using complex theoretical models such as rayleigh expansion, or time-consuming mathematical methods such as Finite Difference Time Domain (FDTD) and Finite Element Method (FEM). For example, Li et al (Li G, Cai L, Xiao F, Pei Y and Xu a 2010 opt. express 1810487) proposes a quantitative calculation method based on a semi-resolved coupling mode model of a plasmonic bragg reflector, which may include different numbers of nanostructures, and using which the design and optimization process for the reflector may be significantly simplified. Recently, asymmetrical transmission devices for electromagnetic waves are also being intensively studied more. For example, Fedotov et al (Fedotov V a, Mladyonov P L, Prosvirnin S L, Rogacheva a V, Chen Y and zhelunudev N I2006 phys.rev.lett.97167401) reported a polarization sensitive transmission effect that is asymmetric along the wave transmission direction based on a planar chiral structure, Shi et al (Shi J, Liu X, Yu S, Lv T, Zhu Z, Ma H Fand Cui T J2013 appl.phys.lett.191905) demonstrated dual-band asymmetric transmission of electromagnetic waves in two opposite directions in a dual-layer chiral material, Xu et al (Xu Y, Gu C, Hou B, Lai Y, Li J andedchen H2013 nat.comm.42905) proposed refractive index of a gradient material based optical waveguide for asymmetric transmission of light.
However, the existing asymmetric transmission technology still cannot achieve a sufficiently high electromagnetic wave asymmetric transmission effect, and the device formed by the technology is relatively single in function, so that the application of the device in more scenes is limited, and the relatively complex structure of the device also causes the cost of processing implementation to be high.
SUMMERY OF THE UTILITY MODEL
In view of the above technical problems, the present application provides a uni-directional plasmon bragg waveguide reflector, which has asymmetric reflection properties along the propagation direction of electromagnetic waves by designing an MIM waveguide having non-geometric symmetry along the longitudinal direction (i.e., the transmission direction of electromagnetic waves) and composed of periodic nanostructures.
In particular, the present application relates to a unidirectional plasmon bragg waveguide reflector comprising a first metal layer, a non-metal layer and a second metal layer; the non-metal layer comprises a core layer and at least one microstructure which is formed on the core layer, is asymmetric along the transmission direction of electromagnetic waves in the core layer and is integrally formed with the core layer; the reflector further comprises a first port and a second port for allowing the electromagnetic waves to be input into the reflector or for allowing the electromagnetic waves to be output from the reflector; the first port allows the electromagnetic wave to be incident into the reflector along the first direction, and the second port allows the electromagnetic wave to be incident into the reflector along the second direction; the reflector exhibits a high absorption rate when the electromagnetic wave is incident in a first direction of the reflector; the reflector exhibits a high reflectivity when the electromagnetic wave is incident in a second direction of the reflector.
Preferably, the first direction and the second direction are parallel and opposite directions.
Preferably, when the electromagnetic wave is incident along a first direction of the reflector, the reflector exhibits a reflectivity of R+(ii) a When the electromagnetic wave is incident along the second direction of the reflector, the reflector shows a reflectivity of R-(ii) a Let the reflection extinction ratio be 10 Xlg (R)-/R+) The reflection extinction ratio of the reflector is greater than 8dB, preferably greater than 10dB, and more preferably 11 dB.
Preferably, the number of the microstructures is at least two, and the two microstructures are symmetrically arranged relative to the core layer; and the two microstructures symmetrically arranged relative to the core layer form a microstructure unit together, and the reflector comprises at least one microstructure unit.
Preferably, the microstructure units are arranged at equal intervals along the transmission direction of the electromagnetic wave and form a periodic structure.
Preferably, the input and output thicknesses of the first port and the second port of the reflector are equal; the input and output thickness ensures that the electromagnetic wave only transmits a single fundamental mode within a waveguide formed by the first metal layer, the non-metal layer and the second metal layer.
Preferably, the cross section of the microstructure is a triangle, a trapezoid or a parallelogram.
Preferably, the cross section of the microstructure is a right triangle; one of the right-angle sides of the right-angle triangle coincides with the surface of the core layer, and the other right-angle side is arranged on one side of the electromagnetic wave transmission direction and vertically extends from the surface of the core layer to the outer side of the core layer.
Preferably, the length of the right-angle side, namely the width w of the triangle, is in the range of 180nm-220nm, and the height h of the other right-angle side, namely the triangle, is in the range of 130nm-180 nm; more preferably, the width w is 210nm and the height h is 150 nm.
Preferably, the wavelength λ of the electromagnetic wave is in the range of 765nm-820nm and 505-605 nm.
Preferably, the arrangement period p of the microstructure units is in the range of 200nm-800 nm.
Preferably, the number N of the microstructure units is more than or equal to 4.
Preferably, the input-output thickness D0100nm, the width w is 210nm, the height h is 150nm, the period p is 208nm, and the wavelength λ of the electromagnetic wave is 800 nm; the number N of the microstructure units is 4.
Through the design, the unidirectional plasmon Bragg waveguide reflector based on the longitudinal asymmetric microstructure can realize unidirectional reflection of electromagnetic waves, namely the electromagnetic waves enter the waveguide from one side to show a high reflection effect, and enter the waveguide from the other side to show a high absorption effect, the reflection extinction ratio of the electromagnetic waves generated by the incidence of the electromagnetic waves from the two sides of the reflector can reach nearly 11dB, and the reflector can realize the functions of a unidirectional reflector and a unidirectional absorber. Therefore, the module control flexibility based on the device is greatly improved, and the application range of the plasmon equipment is expanded.
Drawings
FIG. 1: the sectional structure of the unidirectional plasmon Bragg reflector is shown schematically.
FIG. 2 is a drawing: schematic left-side incidence of individual nanostructures.
FIG. 3: schematic diagram of single nanostructure right incidence.
FIG. 4 (a): r formed by changing w and h under the conditions of N being 4, p being 280nm and lambda being 800nm+Relative to w and h.
FIG. 4 (b): r formed by changing w and h under the conditions of N being 4, p being 280nm and lambda being 800nm-Relative to w and h.
FIG. 4 (c): under the conditions of N being 4, p being 280nm and lambda being 800nm, w and h are changed to form | R+-R-I is a functional relationship with respect to w and h.
FIG. 5: at D0When the wavelength of the electromagnetic wave λ is 100nm, w is 210nm, h is 150nm, N is 4, and p is 280nm, a schematic diagram of the change of the reflector with the wavelength λ of the electromagnetic wave is obtained.
FIG. 6: at D0In the case of 100nm, w 210nm, h 150nm, N4, λ 800nm, a diagram of the change of the reflector with the microstructure unit period p is obtained.
FIG. 7: at D0A diagram of the change of the reflector with the number N of microstructure units is obtained for 100nm, w 210nm, h 150nm, p 208nm and λ 800 nm.
Detailed Description
The terms of the upper, lower, left, right, and the like used in the present specification indicate directional features, and are only used to clarify the technical aspects with respect to the contents of the drawings, and do not substantially limit the directions of the technical aspects described in the present specification. That is, the upper, lower, left, right may be understood as the first side, the second side, the third side, the fourth side, or the first direction, the second direction, the third direction, the fourth direction, or the like. In the coordinate system direction mentioned in the specification and the drawings of the specification, the X-axis direction is the direction parallel to the paper surface upward, the Z-axis direction is the direction parallel to the paper surface rightward, and the Y-axis direction is the direction perpendicular to the paper surface and pointing to the reader.
As shown in fig. 1, the uni-directional plasmon bragg waveguide reflector of this embodiment has a metal-nonmetal-metal (MIM) waveguide structure, an upper layer is a first metal layer 1, an intermediate layer is a nonmetal layer 2, and a lower layer is a second metal layer 3. Fig. 1 is a schematic cross-sectional view of the X-Z plane of the reflector, and the overall structure of the reflector is a flat sheet-like structure, specifically, the cross-sectional structure in fig. 1 extends along the Y direction according to the same shape. In general, the dimension of the reflector along the Y direction in fig. 1 is much larger than the dimensions of the reflector in the other two directions, so that the dimension of the reflector in the Y direction does not need to be considered when designing the reflector.
As shown in fig. 1, the nonmetal layer 2 is preferably made of a dielectric material capable of allowing propagation of electromagnetic waves, and the nonmetal layer 2 has a core layer 4.
Electromagnetic waves can be input and output from the end surface of the nonmetal layer 2, and can propagate in the nonmetal layer 2 along the Z direction. The end face is specifically a first port 6 located on the left side face of the reflector, that is, the nonmetal layer 2 is located on the end face on the side face in the negative direction of the Z axis of the reflector, and a second port 7 located on the right side face of the reflector, that is, the nonmetal layer 2 is located on the end face in the positive direction of the Z axis of the reflector. The first port 6 and the second port 7 are used for allowing the electromagnetic wave to be input into the nonmetal layer 2 or output from the nonmetal layer 2. The thickness of the non-metallic layer 2 is D at the first port 6 and the second port 70I.e. the input and output thickness of the reflector are all D0Said input-output thickness D0It is preferable to ensure that only a single fundamental mode is transmitted at a given wavelength within the waveguide.
The nonmetal layer 2 further has microstructures 5 protruding in the positive and negative directions of the X axis and formed integrally with the core layer 4. The microstructure 5 is preferably asymmetric in cross-sectional shape along the direction of electromagnetic wave propagation, i.e., the z-direction. The section of the microstructure 5 is asymmetrical triangle, trapezoid, parallelogram, etc. in the direction of extending z.
Preferably, the cross-sectional shape of the microstructure 5 is a right triangle, wherein one right-angled side coincides with the surface of the core layer 4, and the other right-angled side is disposed at the second port side and extends perpendicularly from the surface of the core layer 4 to the outside of the core layer 4, as shown in the figure, the height of the microstructure 5 along the X direction is h. Further, the microstructures 5 are preferably arranged symmetrically with respect to the core layer 4, and two microstructures 5 arranged symmetrically with respect to the core layer 4 form one microstructure unit, so that the microstructure unit is a prism structure formed by extending in the Y direction according to the cross-sectional shape thereof. As shown in fig. 1, a plurality of microstructure units having the same structure are arranged on the core layer 4 at equal intervals in the Z direction, so that a periodic structure is formed. The relevant parameters are described as: the length of the microstructure units along the Z direction is w, the repetition period of the microstructure units along the Z direction is p, the interval of each microstructure unit along the Z direction is (p-w), and the number of the microstructure units of the reflector is N.
When electromagnetic waves enter the reflector along the positive direction of the Z axis, as shown in fig. 2, if the reflector is provided with only one microstructure unit, the microstructure unit can be regarded as a whole, namely, as a black box, the electromagnetic waves enter the black box along the first port 6 of the reflector along the positive direction of the Z axis and exit from the second port 7 of the reflector, and the reflection coefficient formed by the reflector is
A transmission coefficient of
If the reflector is provided with two microstructure units, electromagnetic waves enter along the first port 6 of the reflector in the positive direction of the Z axis and exit from the second port 7 of the reflector, and pass through the continuous action of two black boxes in the transmission process, and the reflection coefficient formed by the reflector is
A transmission coefficient of
By analogy, if the reflector is provided with N-1 microstructure units, electromagnetic waves enter along the first port 6 of the reflector along the Z-axis negative direction and exit from the second port 7 of the reflector, and pass through the continuous action of N-1 black boxes in the transmission process, and the reflection coefficient formed by the reflector is
A transmission coefficient of
If the reflecting meansWith N microstructure units, the electromagnetic wave enters along the first port 6 of the reflector along the positive direction of the Z axis and exits from the second port 7 of the reflector, and passes through the continuous action of N black boxes during transmission, and the reflection coefficient formed by the reflector is
A transmission coefficient of
When electromagnetic waves are incident into the reflector along the negative direction of the Z axis, as shown in fig. 3, if the reflector has only one microstructure unit, the microstructure unit can be regarded as a whole, i.e. as a "black box", the electromagnetic waves are incident into the "black box" along the second port 7 of the reflector along the negative direction of the Z axis and exit from the first port 6 of the reflector, and the reflection coefficient formed by the reflector is
A transmission coefficient of
If the reflector is provided with two microstructure units, the electromagnetic wave enters along the second port 7 of the reflector along the Z-axis negative direction, exits from the first port 6 of the reflector and passes through the continuous action of two black boxes in the transmission process, and the reflection coefficient formed by the reflector is
A transmission coefficient of
By analogy, if the reflector has N-1 microstructure units, the electromagnetic wave enters along the second port 7 of the reflector along the negative direction of the Z axis and exits from the first port 6 of the reflector, and passes through the transmission processThrough the continuous action of N-1 black boxes, the reflector forms a reflection coefficient of
A transmission coefficient of
If the reflector is provided with N microstructure units, the electromagnetic wave enters along the second port 7 of the reflector along the Z-axis negative direction, exits from the first port 6 of the reflector, and passes through the continuous action of N black boxes in the transmission process, and the reflection coefficient formed by the reflector is
A transmission coefficient of
The above main parameters conform to the following recurrence formula:
wherein the content of the first and second substances,
u＝exp[ik0neff(p-w)]；
neffin order to view the reflector as a whole,the effective refractive index of the reflector.
Therefore, it is only necessary to determine τ by calculation using a conventional simulation method1、
And
i.e. the properties of the reflector can be determined by simulation.
It is noted that, according to the principle of reversible optical path,
all ranges of m-1, 2, …, N are true. Therefore, the reflectivity of the plasmon bragg reflector can be calculated from the above model
And transmittance
Examples
Selecting a unidirectional plasmon Bragg reflector as shown in FIG. 1, wherein the microstructure 5 formed on the nonmetal layer 2 inside the reflector is a right-angled triangle, one right-angled edge of the microstructure coincides with the surface of the core layer 4, and the other right-angled edge is arranged on one side of the second port and vertically extends from the surface of the core layer 4 to the outside of the core layer 4.
In this embodiment, SiO is used2As a material for forming the non-metal layer 2, the input/output thickness is D0Is 100 nm. Namely, the refractive index n of the non-metal layer 2sio21.45, input-output thickness D0＝100nm。
When N is 4, a difference in the reflection rates of the saturations incident from the two directions can be obtained. When the number N of the microstructure units is 4 and the period p is 280nm, the parameters w and h are changed to obtain the electromagnetic wave with the operating wavelength λ shown in fig. 4R as a function of w and h at 800nm+、R-And | R+-R-L, |; wherein R is+The reflectivity, R, of the electromagnetic wave incident into the reflector from the first port 6 in the positive Z-axis direction-Reflectivity, | R, formed by electromagnetic wave incident into the reflector from the 2 nd port along the Z-axis negative direction+-R-I is R above+And R-The absolute value of the difference between the two reflectivities. As can be seen from FIGS. 4(a) - (c), R+And R-The maximum reflectance difference between the two occurs at the positions where w is 210nm and h is 150nm, and the corresponding maximum reflectance difference is | R+-R-And | ═ 0.814. That is, the following can be determined by fig. 4 (c): when the working wavelength of the electromagnetic wave is lambda is 800nm, SiO is selected2As material for the non-metallic layer, the reflector is selected to have a structural parameter D0When the refractive index is 100nm, w is 210nm, h is 150nm, and p is 280nm, the obtained difference in reflectance is | R+-R-And | ═ 0.814. Meanwhile, as can be seen from fig. 4, the reflectors both show a high | R in the range of 180-+-R-I.e. exhibit high asymmetric transmission properties.
While maintaining the respective constructional parameters of the reflector, i.e. D0In the case of 100nm, w 210nm, h 150nm, N4 and p 280nm, the variation of the reflector with the operating wavelength as shown in fig. 5 can be obtained by changing the operating wavelength of the electromagnetic wave, wherein the abscissa is the electromagnetic wavelength and the ordinate is the reflectance and transmittance in both directions. Let the reflection extinction ratio be 10 Xlg (R)-/R+) As can be seen from fig. 5, the reflection extinction ratio is as high as 10.97dB at λ of 800nm, and the reflection extinction ratio can reach 10dB at a bandwidth of more than about 50nm around 800 nm. And the wavelengths are in the ranges of 765nm-820nm and 505nm-605nm, the reflection extinction ratios are all more than 8dB, an obvious asymmetric transmission effect is formed, and the control sensitivity of the device can be improved.
While maintaining the respective constructional parameters of the reflector, i.e. D0In the case of 100nm, w 210nm, h 150nm, N4, and λ 800nm, the period of the microstructure unit is changed, and a schematic diagram of the change of the reflector with the period of the microstructure unit as shown in fig. 6 can be obtained, where the abscissa is the period of the microstructure unit and the ordinate is the reflectance and transmittance in two directions. . As can be seen from fig. 6, the reflectivity shows a periodic variation relationship with the period of the microstructure unit, and reaches a maximum value at p of 280nm, 500nm and 720nm, and the maximum value decreases with the increase of the value of the period p. Meanwhile, the reflection extinction ratios of the period p in the range of 200nm-800nm all reach more than 10dB, an obvious asymmetric transmission effect is formed, and the control sensitivity of the device can be improved.
While maintaining the respective constructional parameters of the reflector, i.e. D0In the case of 100nm, w 210nm, h 150nm, p 208nm, and λ 800nm, the number N of microstructure units is changed, and a schematic diagram of the change of the reflector according to the number of microstructure units as shown in fig. 7 can be obtained, where the abscissa is the period of the microstructure units and the ordinate is the reflectance and transmittance in both directions. . As can be seen from FIG. 7, R is found after the number of microstructure elements exceeds 4-I.e. the saturation value has been reached. Therefore, the reflection extinction ratio is also rapidly increased along with the number of the microstructure units, and the saturation is achieved after N is 4, that is, the reflection extinction ratio can be sufficiently large by selecting N to be more than or equal to 4, so that an obvious asymmetric transmission effect is formed, and the control sensitivity of the device can be improved.
As can be seen from the ordinate transmittance values in fig. 5 to 7, the transmittance values are very small. The obvious reflection extinction ratio caused by the reflector shows that most of energy is reflected when electromagnetic waves are injected from a right port by the plasmon Bragg waveguide reflector; and when an electromagnetic wave is incident from the left port, most of the energy will be absorbed.
In summary, the present application relates to a uni-directional plasmon bragg waveguide reflector having a longitudinally asymmetric structure, which exhibits a very large difference in reflection and absorption when electromagnetic waves are incident from a left port and a right port. The asymmetric reflection property along the propagation direction of the electromagnetic wave is realized mainly by designing an MIM waveguide which is composed of periodic nanostructures and is not geometrically symmetric along the longitudinal direction (namely the transmission direction of the electromagnetic wave), so that the unidirectional plasmon Bragg waveguide reflector based on the longitudinal asymmetric microstructure can realize unidirectional reflection of the electromagnetic wave, namely the electromagnetic wave enters the waveguide from one side to show a high reflection effect and enters the waveguide from the other side to show a high absorption effect, so that the plasmon equipment has richer control modes, and the design and use flexibility of a device are improved.
The foregoing is illustrative of only some embodiments of the invention, and since numerous modifications and changes will readily occur to those skilled in the art, it is not desired to limit the invention to the exact construction and operation illustrated and described, and accordingly, all modifications and equivalents may be resorted to, falling within the scope of the invention.
Claims (15)
1. A unidirectional plasmon Bragg waveguide reflector comprises a first metal layer, a non-metal layer and a second metal layer; it is characterized in that the utility model is characterized in that,
the non-metal layer comprises a core layer and at least one microstructure which is formed on the core layer, is asymmetric along the transmission direction of electromagnetic waves in the core layer and is integrally formed with the core layer;
the reflector further comprises a first port and a second port for allowing the electromagnetic waves to be input into the reflector or for allowing the electromagnetic waves to be output from the reflector; the first port allows the electromagnetic wave to be incident into the reflector along a first direction, and the second port allows the electromagnetic wave to be incident into the reflector along a second direction;
the reflector exhibits a high absorption rate when the electromagnetic wave is incident from the first port in a first direction of the reflector;
the reflector exhibits a high reflectivity when the electromagnetic wave is incident from the second port in a second direction of the reflector.
2. The reflectron of claim 1, in which the first direction and the second direction are two parallel and opposite directions.
3. The reflector of claim 1, wherein the reflector exhibits a reflectivity of R when the electromagnetic wave is incident along the first direction of the reflector+(ii) a When the electromagnetic wave is incident along the second direction of the reflector, the reflector shows a reflectivity of R-(ii) a Let the reflection extinction ratio be 10 Xlg (R)-/R+) And the reflection extinction ratio of the reflector is more than 8 dB.
4. The reflector of any of claims 1-3, wherein the microstructures are at least two and the two microstructures are symmetrically disposed with respect to the core layer; and the two microstructures symmetrically arranged relative to the core layer form a microstructure unit together, and the reflector comprises at least one microstructure unit.
5. The reflector of claim 4, wherein the microstructure units are arranged at equal intervals in the electromagnetic wave transmission direction and form a periodic structure.
6. The reflector of any of claims 1-3, wherein the input-output thickness of the first port and the second port of the reflector are equal; the input and output thickness ensures that the electromagnetic wave only transmits a single fundamental mode within a waveguide formed by the first metal layer, the non-metal layer and the second metal layer.
7. The reflector of any of claims 1-3, wherein the microstructures have a triangular, trapezoidal, or parallelogram cross-section.
8. The reflector of claim 5, wherein the microstructures have a triangular, trapezoidal, or parallelogram cross-section.
9. The reflector of claim 8, wherein the microstructures are right triangular in cross-section; one of the right-angle sides of the right-angle triangle coincides with the surface of the core layer, and the other right-angle side is arranged on one side of the second port and vertically extends from the surface of the core layer to the outer side of the core layer.
10. The reflector of claim 9, wherein the length of said one leg, i.e. the width w of said triangle, is in the range of 180nm-220nm and the height h of said other leg, i.e. said triangle, is in the range of 130nm-180 nm.
11. The reflector of claim 10, wherein the width w is 210nm and the height h is 150 nm.
12. The reflector of any of claims 1-3 wherein the electromagnetic wave has a wavelength λ in the range of 765nm-820nm and 505-605 nm.
13. The reflector of claim 5, 9, 10 or 11, wherein the microstructure unit has an arrangement period p in the range of 200nm to 800 nm.
14. The reflector of claim 4, wherein the number N of microstructure elements is greater than or equal to 4.
15. The reflector of claim 10 or 11, wherein the input and output have a thickness D0100nm, 210nm, and a heighth is 150nm, the period p is 208nm, and the wavelength λ of the electromagnetic wave is 800 nm; the number N of the microstructure units is 4.
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